JP2680896B2 - Charged particle beam exposure apparatus and cleaning method thereof - Google Patents
Charged particle beam exposure apparatus and cleaning method thereofInfo
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- JP2680896B2 JP2680896B2 JP1153751A JP15375189A JP2680896B2 JP 2680896 B2 JP2680896 B2 JP 2680896B2 JP 1153751 A JP1153751 A JP 1153751A JP 15375189 A JP15375189 A JP 15375189A JP 2680896 B2 JP2680896 B2 JP 2680896B2
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- charged particle
- particle beam
- cylindrical body
- cleaning
- exposure apparatus
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Description
【発明の詳細な説明】 〔概要〕 荷電粒子ビームで試料の露光を行なう荷電粒子ビーム
露光装置とそのクリーニング方法に関し、 オーバーホールの必要なく筒体の堆積物を充分に除去
でき、このクリーニング後の光軸の調整が必要ないこと
を目的とし、 露光試料に荷電粒子ビームを照射して該露光試料にパ
ターンを形成する荷電粒子ビーム露光装置において、該
荷電粒子ビームの光軸の周囲を囲むよう設置した筒体の
内周面に該光軸に沿って分割された複数の導電部を有
し、該筒体内にクリーニングガスを流し込み該複数の導
電部間に高周波信号を印加して放電させ、該クリーニン
グガスを活性化して該筒体の内周面の堆積物をエッチン
グ除去するよう構成する。The present invention relates to a charged particle beam exposure apparatus for exposing a sample with a charged particle beam and a cleaning method therefor, which is capable of sufficiently removing deposits on a cylindrical body without the need for overhaul. A charged particle beam exposure apparatus that irradiates an exposed sample with a charged particle beam to form a pattern on the exposed sample for the purpose of not requiring adjustment of the axis is installed so as to surround the optical axis of the charged particle beam. The inner peripheral surface of the cylindrical body has a plurality of conductive parts divided along the optical axis, and a cleaning gas is flown into the cylindrical body to apply a high-frequency signal between the plurality of conductive parts to discharge the cleaning gas. The gas is activated to remove the deposits on the inner peripheral surface of the cylindrical body by etching.
本発明は荷電粒子ビーム露光装置とそのクリーニング
方法に関し、荷電粒子ビームで試料の露光を行なう荷電
粒子ビーム露光装置とそのクリーニング方法に関する。The present invention relates to a charged particle beam exposure apparatus and a cleaning method thereof, and more particularly to a charged particle beam exposure apparatus that exposes a sample with a charged particle beam and a cleaning method thereof.
近年、集積回路の高密度化に伴い、微細パターン形成
方法の主流であったフォトリソグラフィーに代わり、電
子線等の荷電粒子ビームを用いる露光装置が開発されて
いる。荷電粒子ビーム露光装置では例えば電子ビームで
パターン形成を行う。この露光は、1/2ミクロン程度ま
たはそれ以下の、フォトリソグラフィーでは形成出来な
かった微細なパターン形成ができ、またレチクルやマス
クを作成する事なく設計されたパターンデータを計算機
処理を行うだけで露光データとする為ターンアラウンド
が早いと言った特長があり、ASIC等の少量多品種の半導
体の生産に適している。In recent years, with the increase in the density of integrated circuits, an exposure apparatus using a charged particle beam such as an electron beam has been developed in place of photolithography, which has been the main method for forming a fine pattern. In the charged particle beam exposure apparatus, pattern formation is performed with an electron beam, for example. This exposure can form a fine pattern of about 1/2 micron or less, which could not be formed by photolithography, and expose the designed pattern data without making a reticle or mask just by computer processing. Since it uses data, it has a feature that turnaround is fast, and it is suitable for the production of a large amount of semiconductors in small quantities such as ASICs.
このような装置で、微細なパターンを正確な位置に露
光するためには、電子ビームが安定している事が重要で
あり、その鏡筒は、時経変化をビームに与えない安定し
た鏡筒である事が望まれている。In order to expose a fine pattern to a precise position with such an apparatus, it is important that the electron beam is stable, and its lens barrel is a stable lens barrel that does not give a temporal change to the beam. Is desired.
荷電粒子ビーム露光装置では露光データを偏向系に与
え、荷電粒子ビーム(例えば電子ビーム)を試料上の露
光したい位置に偏向させる。露光装置の光軸は内周面が
金等の導電体をメッキした断面円形の筒体の周囲を囲ま
れている。これは電子ビームの周囲に絶縁物があると絶
縁物の荷電により電子ビームの軌道が影響を受けるため
である。In the charged particle beam exposure apparatus, exposure data is given to a deflection system to deflect a charged particle beam (for example, an electron beam) to a position on a sample to be exposed. The optical axis of the exposure apparatus is surrounded by an inner peripheral surface of a cylindrical body having a circular cross section plated with a conductor such as gold. This is because if there is an insulator around the electron beam, the trajectory of the electron beam is affected by the charge of the insulator.
また、電子ビームが筒体を通過すときに発生する収差
や偏向歪による露光位置の位置ずれが発生するため、露
光以前にテスト露光を行なって補正値を求め、露光時に
はこの補正値を露光データに演算して位置ずれの補正を
行なっている。Also, since the exposure position shifts due to aberrations and deflection distortion that occur when the electron beam passes through the cylinder, a test exposure is performed before exposure to obtain a correction value, and this correction value is used during exposure. Is calculated to correct the positional deviation.
しかし、露光を繰返すと、真空中の残留ガスの炭素成
分や真空シールのグリース等から揮発する有機成分や試
料から飛散、蒸発したレジスト等が電子ビームの照射に
より筒体の内周面に焼付き堆積し、この堆積物が帯電す
るために、露光位置の位置ずれが発生する。この位置ず
れの変化量は堆積物が少ないときは緩やかであるが堆積
物の増加に従って急激となるため、堆積物を除去するた
めにオーバーホールが行なわれる。However, when the exposure is repeated, the carbon component of the residual gas in the vacuum, the organic components that volatilize from the grease of the vacuum seal, the resist scattered from the sample, and the like are evaporated onto the inner surface of the cylinder due to the electron beam irradiation. Since the deposits are accumulated and the deposits are charged, the exposure position is displaced. The amount of change in the positional deviation is gentle when the amount of deposits is small, but becomes steep as the amount of deposits increases. Therefore, an overhaul is performed to remove the deposits.
オーバーホールは分解、清掃、組立、調整の工程より
なり、多大な時間を要する。このためオーバーホールす
ることなく筒体の堆積物を除去する方法として、活性化
ガスを筒体内に送り込み堆積物を除去する方法、筒体内
に高周波電極を挿入して放電させ堆積物を分解して除去
する方法等が従来より行なわれている。The overhaul consists of the steps of disassembly, cleaning, assembly and adjustment, and requires a great deal of time. Therefore, as a method of removing deposits on the cylinder without overhauling, a method of sending activated gas into the cylinder to remove the deposits, inserting a high-frequency electrode into the cylinder to cause discharge to decompose and remove the deposits The method of doing so is conventionally performed.
活性化ガスを送り込む方法は活性化ガスを筒体内に送
り込む配管においてもガスがしだいに不活性となり、筒
体の奥ではほとんど不活性となって堆積物を充分に除去
できないという問題があった。The method of feeding the activated gas has a problem that the gas gradually becomes inactive even in the pipe for feeding the activated gas into the cylindrical body and becomes almost inactive in the inner part of the cylindrical body, so that the deposit cannot be sufficiently removed.
また、高周波電極を挿入する方法では筒体の内径が小
さい部分や筒体の内部を横切るアパーチャ等があると、
その部分より先に高周波電極を挿入することができず、
また高周波電極を挿入するために電子銃を取外す等の光
軸の変更をしなければならず、その後調整を行なう時間
が必要になるという問題があった。Further, in the method of inserting the high-frequency electrode, if there is a portion with a small inner diameter of the cylinder or an aperture that crosses the inside of the cylinder,
I can not insert the high frequency electrode before that part,
In addition, there is a problem in that the optical axis must be changed, for example, the electron gun is removed in order to insert the high frequency electrode, and time is required for the adjustment thereafter.
本発明は上記の点に鑑みなされたもので、オーバーホ
ールの必要なく筒体の堆積物を充分に除去でき、このク
リーニング後の光軸の調整が必要ない荷電粒子ビーム露
光装置とそのクリーニング方法を提供することを目的と
する。The present invention has been made in view of the above points, and provides a charged particle beam exposure apparatus and a cleaning method thereof, which can sufficiently remove deposits on a cylindrical body without the need for overhaul and require adjustment of the optical axis after cleaning. The purpose is to do.
第1図は本発明装置の原理図を示す。 FIG. 1 shows the principle of the device of the present invention.
同図中、荷電粒子ビームの光軸M1の周囲は筒体M2で囲
まれており、筒体M2の内周面に光軸M1に沿って分割され
た複数の導電部M3,M4が設けられている。In the figure, the circumference of the optical axis M1 of the charged particle beam is surrounded by a cylinder M2, and a plurality of conductive portions M3, M4 divided along the optical axis M1 are provided on the inner peripheral surface of the cylinder M2. ing.
クリーニング時には筒体M2内にクリーニングガスクリ
ーニングガス導入手段により導入し、上記導電部M3,M4
間に高周波電圧印加手段M5から高周波電圧を印加して放
電させ、クリーニングガスを活性化して筒体M2の内周面
の堆積物をエッチング除去する。At the time of cleaning, the cleaning gas is introduced into the cylindrical body M2 by the cleaning gas introducing means, and the conductive portions M3 and M4 are introduced.
In the meantime, a high-frequency voltage is applied from the high-frequency voltage applying means M5 to cause discharge, and the cleaning gas is activated to remove the deposits on the inner peripheral surface of the cylindrical body M2 by etching.
本発明においては、筒体M2内にクリーニングガスを流
し込み、導電部M3,M4間に高周波信号を印加するだけで
堆積物を充分に除去でき、クリーニングを行なうにあた
って露光装置を分解する必要がないためクリーニング後
の光軸の調整が不要である。In the present invention, the cleaning gas is poured into the cylindrical body M2, the deposit can be sufficiently removed only by applying a high-frequency signal between the conductive portions M3, M4, and there is no need to disassemble the exposure device for cleaning. There is no need to adjust the optical axis after cleaning.
第2図は本発明装置の一実施例の構造図を示す。 FIG. 2 shows a structural diagram of an embodiment of the device of the present invention.
同図中、3は電子ビームを発生する電子銃で、カソー
ド3a,グリッド3b,アノード3c,グリッドバイアス3dより
構成されている。電子銃3の下方には略200μm□の第
1スリット6,第1レンズ7,スリットデフレクタ9,第2レ
ンズ10,略500μm□の第2スリット11,ブランキング13,
第3レンズ14が設けられている。第1スリット6,スリッ
トデフレクタ9及び第2スリットは矩形成形部を構成し
ている。In the figure, 3 is an electron gun for generating an electron beam, which is composed of a cathode 3a, a grid 3b, an anode 3c, and a grid bias 3d. Below the electron gun 3, there are a first slit 6 of approximately 200 μm □, a first lens 7, a slit deflector 9, a second lens 10, a second slit 11 of approximately 500 μm □ , a blanking 13,
A third lens 14 is provided. The first slit 6, the slit deflector 9 and the second slit form a rectangular molded portion.
また、これらの下方には略100μmφのアパーチャ18,
ビームサイズによるピントぼけを補正用のリフォーカス
レンズ19,第4レンズ20,ビーム位置合わせ用のメインデ
フレクタコイル21,ピント合わせ用のフォ−カシグコイ
ル22,ビーム位置合わせ用のサブデフレクタ23,第5レン
ズ24が順次設けられており、その下方のステージ26が載
置されたウエハ等の試料25に電子ビームが照射されてパ
ターンが形成される。なお、第1,第2,第3,第4,第5レン
ズ7,10,14,20,24及びリフォーカスレンズ19夫々は磁界
による電子ビームの加速、偏向、収束を行なっている。Also, below these, an aperture 18 of approximately 100 μm φ ,
Refocus lens 19, fourth lens 20, main deflector coil 21 for beam alignment, focus deflector coil 22, sub deflector 23 for beam alignment, fifth lens for correcting defocus due to beam size 24 are sequentially provided, and a pattern 25 is formed by irradiating a sample 25 such as a wafer on which a stage 26 is placed under the sample 24 with an electron beam. The first, second, third, fourth, fifth lenses 7, 10, 14, 20, 24 and refocusing lens 19 respectively accelerate, deflect and converge the electron beam by a magnetic field.
露光装置の光軸の例えば電子銃3から第1スリット6
までの間の部分、第1スリット6から第2スリット11ま
での間の部分、第2スリット11からアパーチャ18までの
部分、アパーチャ18から第5レンズ25下部までの部分夫
々は、スリットデフレクタ9の電極やブランキング13の
電極さらにサブデフレクタ23の電極等の一部電極を除い
て、夫々径の異なるアルミ等の導電体や、セラミック等
の絶縁物の内周面を金等の導電体をメッキした複数個の
断面円形の筒体で周囲を囲まれている。また、電極部の
外側も同様に筒体で周囲を囲まれている。For example, from the electron gun 3 to the first slit 6 on the optical axis of the exposure apparatus.
Between the first slit 6 and the second slit 11, the portion from the second slit 11 to the aperture 18, and the portion from the aperture 18 to the lower portion of the fifth lens 25, respectively, of the slit deflector 9. Except for some electrodes such as electrodes and electrodes of blanking 13 and electrodes of sub-deflector 23, conductors such as aluminum with different diameters, and inner surfaces of insulators such as ceramics are plated with conductors such as gold. It is surrounded by a plurality of cylindrical bodies having a circular cross section. Further, the outside of the electrode portion is also surrounded by the cylindrical body.
第3図は筒体30の第5レンズ24部分の筒体を示してお
り、第5レンズ24は筒体30の外周に設けられ、サブデフ
レクタ23は筒体30の内部に設けられている。FIG. 3 shows the tubular body of the fifth lens 24 portion of the tubular body 30, the fifth lens 24 is provided on the outer periphery of the tubular body 30, and the sub deflector 23 is provided inside the tubular body 30.
第4図は筒体30の断面図を示す。同図中、筒体の本体
31は絶縁性のセラミックで形成され、内周面に複数のT
字形の凹部32を設けている。筒体の本体31の内周面は金
等の導電体でメッキされ、この後、各凹部32の一端部32
aの金メッキを放電加工により除去し、金メッキによる
導電部33a〜33hは光軸に沿って互いに絶縁分離されてい
る。このように一端部32aで導電部33a〜33hを分離して
いるのは絶縁性の一端部32aが筒体30の中心部の電子ビ
ームから覗出しないようにするためである。FIG. 4 shows a sectional view of the tubular body 30. In the figure, the body of the cylinder
31 is made of insulating ceramic and has multiple T
A letter-shaped recess 32 is provided. The inner peripheral surface of the main body 31 of the cylindrical body is plated with a conductor such as gold, and then one end 32 of each recess 32 is formed.
The gold plating of a is removed by electric discharge machining, and the conductive parts 33a to 33h made of gold plating are insulated and separated from each other along the optical axis. The conductive portions 33a to 33h are separated by the one end portion 32a in this manner so that the insulating one end portion 32a does not look out from the electron beam in the central portion of the tubular body 30.
このうち、対向する導電部33aと33eとの間にはクリー
ニング時に発振器35より高周波信号が印加される。Of these, a high frequency signal is applied from the oscillator 35 between the opposing conductive portions 33a and 33e during cleaning.
クリーニング時には酸素(O2,O3),アルゴン(A
r),フレオン(CF4),又はこれらを混合したクリーニ
ングガスを真空度1mTorr〜1Torrとして筒体30内に流し
込む。更に周波数10K〜1MHzで出力50〜60W程度の高周
波信号を発振器35から導電部33a,33e間に略20秒間印加
し、これを数回繰返す。During cleaning, oxygen (O 2 , O 3 ), argon (A
r), Freon (CF 4 ), or a cleaning gas in which these are mixed is poured into the cylindrical body 30 at a vacuum degree of 1 mTorr to 1 Torr. Further frequency 10K~1MH z output 50~60W about the high frequency signal oscillator 35 from the conductive portions 33a, is applied about 20 seconds between 33e, repeated several times.
これによって導電部33a〜33h間で周波数及び真空度に
応じたモードの放電が発生し、クリーニングガスが活性
化されて筒体30の内周全面の堆積物がエッチングされて
除去される。As a result, a discharge in a mode depending on the frequency and the degree of vacuum is generated between the conductive parts 33a to 33h, the cleaning gas is activated, and the deposit on the entire inner peripheral surface of the cylindrical body 30 is etched and removed.
また、1回の放電は略20秒であるため、放電による導
電部33a〜33hの温度上昇は小さく導電部33a〜33hの黒変
のおそれがない。Further, since one discharge takes about 20 seconds, the temperature rise of the conductive portions 33a to 33h due to the discharge is small and there is no fear of blackening of the conductive portions 33a to 33h.
このように筒体30の導電部33a,33e間に高周波信号を
印加するだけで、筒体30内周全面の堆積物を充分に除去
することができる。また、露光装置の分解又は電子鏡の
取外しの必要がなく、何ら光軸の変更をしないのでクリ
ーニング後の調整の必要がない。Thus, by simply applying the high frequency signal between the conductive portions 33a and 33e of the tubular body 30, the deposit on the entire inner circumferential surface of the tubular body 30 can be sufficiently removed. Further, there is no need to disassemble the exposure device or remove the electron mirror, and since the optical axis is not changed at all, there is no need to make adjustments after cleaning.
なお、筒体30内周の導電部は8分割に限らず、2分割
又は4分割又は16分割等のいずれであっても良く、この
場合も互いに対向する2つの導電部間に高周波信号を印
加する。The conductive portion on the inner circumference of the cylindrical body 30 is not limited to 8 divisions, and may be divided into 2 divisions, 4 divisions, 16 divisions, or the like. To do.
上述の如く、本発明の荷電粒子ビーム露光装置とその
クリーニング方法によれば、筒体内にクリーニングガス
を流し込み複数の導電部間に高周波信号を印加するだけ
で筒体の内周全面の堆積物を充分に除去でき、光軸を変
更する必要がないのでクリーニング後に光軸を調整する
必要がなく、クリーニングが簡単かつ短時間で済み、実
用上きわめて有用である。As described above, according to the charged particle beam exposure apparatus and the cleaning method thereof of the present invention, deposits on the entire inner surface of the cylindrical body can be removed only by flowing a cleaning gas into the cylindrical body and applying a high-frequency signal between a plurality of conductive parts. Since it can be sufficiently removed and there is no need to change the optical axis, there is no need to adjust the optical axis after cleaning, cleaning is simple and can be performed in a short time, and it is extremely useful in practice.
第1図は本発明の原理図、 第2図は本発明装置の一実施例の構造図、 第3図は筒体を示す図、 第4図は本発明装置の筒体の一実施例の断面図である。 図において、 M1は光軸、M2,30は筒体、M3,M4,33a〜33hは導電部、M5,
35は発振器 を示す。FIG. 1 is a principle view of the present invention, FIG. 2 is a structural view of an embodiment of the device of the present invention, FIG. 3 is a view showing a cylinder, and FIG. 4 is an embodiment of a cylinder of the device of the present invention. FIG. In the figure, M1 is an optical axis, M2, 30 are cylindrical bodies, M3, M4, 33a to 33h are conductive parts, M5,
35 indicates an oscillator.
フロントページの続き (72)発明者 山田 章夫 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 小野 義暢 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内Front page continuation (72) Inventor Akio Yamada 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa, Fujitsu Limited
Claims (2)
光試料にパターンを形成する荷電粒子ビーム露光装置に
おいて、 該荷電粒子ビームの光軸の周囲を囲むように設置した筒
体の内周面に該光軸に沿って分割された複数の導電部
と、該導電部間に高周波電圧を印加する高周波電圧印加
手段と、該筒体内にクリーニングガスを導入するクリー
ニングガス導入手段とを有し、 該筒体内にクリーニングガスを導入するとともに該導電
部に高周波電圧を印加して放電させるように構成したこ
とを特徴とする荷電粒子ビーム露光装置。1. A charged particle beam exposure apparatus for irradiating an exposed sample with a charged particle beam to form a pattern on the exposed sample, wherein an inner circumference of a cylindrical body surrounding the optical axis of the charged particle beam. A plurality of conductive parts divided along the optical axis on the surface, a high frequency voltage applying means for applying a high frequency voltage between the conductive parts, and a cleaning gas introducing means for introducing a cleaning gas into the cylinder. A charged particle beam exposure apparatus characterized in that a cleaning gas is introduced into the cylindrical body and a high-frequency voltage is applied to the conductive portion to cause discharge.
光試料にパターンを形成する荷電粒子ビーム露光装置の
クリーニング方法であって、 荷電粒子ビームの光軸の周囲を囲むように設置された筒
体の内周面に該光軸に沿って分割された複数の導電部を
設け、該筒体内にクリーニングガスを導入するとともに
前記導電部に高周波電圧を印加して放電させ、該クリー
ニングガスを活性化して該筒体の内周面の堆積物をエッ
チング除去することを特徴とする荷電粒子ビーム露光装
置のクリーニング方法。2. A method of cleaning a charged particle beam exposure apparatus, which irradiates an exposed sample with a charged particle beam to form a pattern on the exposed sample, the cleaning method being provided so as to surround an optical axis of the charged particle beam. A plurality of conductive parts divided along the optical axis are provided on the inner peripheral surface of the cylindrical body, a cleaning gas is introduced into the cylindrical body, and a high frequency voltage is applied to the conductive parts to discharge the cleaning gas. A method for cleaning a charged particle beam exposure apparatus, which comprises activating and removing a deposit on an inner peripheral surface of the cylindrical body by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153751A JP2680896B2 (en) | 1989-06-16 | 1989-06-16 | Charged particle beam exposure apparatus and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153751A JP2680896B2 (en) | 1989-06-16 | 1989-06-16 | Charged particle beam exposure apparatus and cleaning method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0319314A JPH0319314A (en) | 1991-01-28 |
| JP2680896B2 true JP2680896B2 (en) | 1997-11-19 |
Family
ID=15569323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1153751A Expired - Lifetime JP2680896B2 (en) | 1989-06-16 | 1989-06-16 | Charged particle beam exposure apparatus and cleaning method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680896B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401974A (en) * | 1993-03-18 | 1995-03-28 | Fujitsu Limited | Charged particle beam exposure apparatus and method of cleaning the same |
| JP7094752B2 (en) * | 2018-03-29 | 2022-07-04 | 株式会社ニューフレアテクノロジー | Charged particle beam irradiator |
-
1989
- 1989-06-16 JP JP1153751A patent/JP2680896B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319314A (en) | 1991-01-28 |
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