JP2684066B2 - High temperature thermistor - Google Patents
High temperature thermistorInfo
- Publication number
- JP2684066B2 JP2684066B2 JP63245713A JP24571388A JP2684066B2 JP 2684066 B2 JP2684066 B2 JP 2684066B2 JP 63245713 A JP63245713 A JP 63245713A JP 24571388 A JP24571388 A JP 24571388A JP 2684066 B2 JP2684066 B2 JP 2684066B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- electrode layer
- side electrode
- high temperature
- element body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000007772 electroless plating Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、感温素子として用いられる高温用サーミス
タに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a high temperature thermistor used as a temperature sensitive element.
（従来の技術） 例えば、高温測定等に用いられるサーミスタは、一般
に、マンガン，ニッケル，コバルト等の金属酸化物の粉
末材料を板状に焼結させた感温素子としてのサーミスタ
素体と、このサーミスタ素体の両面に焼付けた金，白金
系の耐熱導電材料製の電極層と、この電極層に接着した
金属リード端子と、前記サーミスタ素体，電極層及び金
属リード端子の一部を封止するガラス管とを具備してい
る。(Prior Art) For example, a thermistor used for high temperature measurement is generally a thermistor element as a temperature sensitive element obtained by sintering a powder material of a metal oxide such as manganese, nickel, or cobalt into a plate, An electrode layer made of heat resistant conductive material of gold or platinum based on both sides of the thermistor element body, a metal lead terminal adhered to this electrode layer, and a part of the thermistor element body, the electrode layer and the metal lead terminal. And a glass tube that does.
しかしながら、上述した従来のサーミスタにおいて
は、サーミスタ素体と電極層との成分が相違や熱膨張係
数の相違から両者の密着性が悪く、電極層と金属リード
端子との接着又は接続工程やガラス封止工程中に、熱ス
トレスに起因してサーミスタ素体と電極層との剥離や割
れが生じ両者の接続不良を招いて品質劣化の原因となる
という問題がある。However, in the above-mentioned conventional thermistor, the adhesion between the thermistor element body and the electrode layer is poor due to the difference in the components and the difference in the coefficient of thermal expansion, and the adhesion or connection process between the electrode layer and the metal lead terminal or the glass sealing. During the stopping step, there is a problem that the thermistor element body and the electrode layer are peeled or cracked due to thermal stress, resulting in poor connection between the two and causing quality deterioration.
（発明が解決しようとする課題） 本発明は上記事情に鑑みてなされたものであり、サー
ミスタ素体と電極層との密着性が良く高品質のサーミス
タを提供することを目的とするものである。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and an object thereof is to provide a high-quality thermistor in which the thermistor element body and the electrode layer have good adhesion. .
［発明の構成］ （課題を解決するための手段） 本発明の高温用サーミスタは、炭化ほう素系複合焼結
体からなるサーミスタ素体と、Ni−Ｂ系めっきからなる
電極層とを有するものである。[Structure of the Invention] (Means for Solving the Problems) A high temperature thermistor of the present invention has a thermistor body made of a boron carbide based composite sintered body and an electrode layer made of Ni—B based plating. Is.
前記サーミスタ素体は、酸化物材料とB4Cとを焼成す
ることにより形成され、前記電極層は、サーミスタ素体
の両面に電解めっきにより形成した導電物質製の素体側
電極層と、この素体側電極層の外面に無電解めっきによ
り形成した導電物質製のリード接続用電極層とにより形
成されたことが請求項１記載の発明の特徴である。The thermistor element body is formed by firing an oxide material and B 4 C, the electrode layer, the element side electrode layer made of a conductive material formed on both sides of the thermistor element body by electrolytic plating, and this element. It is a feature of the invention of claim 1 that it is formed by a lead connecting electrode layer made of a conductive material formed on the outer surface of the body side electrode layer by electroless plating.
前記サーミスタ素体は、Al2O3−B4C系感温材料製であ
り、前記素体側電極層はNi製であり、前記リード接続用
電極層はNi−ＢまたはNi−Ｗ製であることが請求項２記
載の発明の特徴である。The thermistor body is made of Al 2 O 3 -B 4 C-based temperature sensitive material, the body side electrode layer is made of Ni, and the lead connection electrode layer is made of Ni-B or Ni-W. That is the feature of the invention described in claim 2.
（作 用） 以下に上記構成の高温用サーミスタの作用を説明す
る。(Operation) The operation of the high temperature thermistor having the above configuration will be described below.
上記構成の高温用サーミスタによれば、炭化ほう素系
複合焼結体からなるサーミスタ素体と、Ni−Ｂ系めっき
からなる電極層とが、強く密着し、これらの接触状態が
良好となる。According to the high temperature thermistor having the above structure, the thermistor body made of the boron carbide based composite sintered body and the electrode layer made of Ni—B based plating are strongly adhered to each other, and the contact state between them is improved.
請求項１記載の構成とすることにより、サーミスタ素
体の導電路形成物質に対し電解めっきによる導電物質製
の素体側電極層が強く密着するとともに、この素体側電
極層の外面に対し無電解めっきによるリード接続用電極
層の導電物質が強く密着する状態となるので、サーミス
タ素体と電極層全体との密着性が強く、これらの接触状
態が良好で高品質のものが得られる。According to the structure of claim 1, the element side electrode layer made of a conductive material by electrolytic plating strongly adheres to the conductive path forming substance of the thermistor element body, and the electroless plating is performed on the outer surface of the element side electrode layer. Since the conductive substance of the lead-connecting electrode layer strongly adheres to the thermistor element body and the entire electrode layer, the contact state between them is good, and a high quality product can be obtained.
また、請求項２記載の構成とすることによりサーミス
タ素体におけるB4Cと素体側電極層としてのNi層，このN
i層とリード接続用電極層としてのNi−Ｂ層又はNi−Ｗ
層がそれぞれ強く密着しこれらの接触状態が良好で高品
質の高温用サーミスタが得られる。In addition, according to the structure described in claim 2, B 4 C in the thermistor element body and the Ni layer as the element side electrode layer, the N layer
i layer and Ni-B layer or Ni-W layer as lead connection electrode layer
Since the layers are closely adhered to each other and the contact state between them is good, a high quality thermistor for high temperature can be obtained.
（実施例） 以下に本発明の実施例を詳細に説明する。(Example) Hereinafter, an example of the present invention will be described in detail.
第１図に示す高温用のサーミスタ１は、酸化物材料で
あるAl2O3と導電路形成物質であるB4Cとの粉末を焼成す
ることにより形成したB4C系複合焼結体としての立方体
状のサーミスタ素体２と、このサーミスタ素体２の両面
に電解めっき法により形成した導電物質であるNi製の素
体側電極層3a,3b及びこの素体側電極層3a,3bの外面に無
電解めっきにより形成した導電物質であるNiB又はNiW製
のリード接続用電極層4a,4bからなる電極層と、この両
リード接続用電極層4a,4bの外面に接着又は半田付けし
た金属製のリード端子5a,5bと、前記サーミスタ素体2,
素体側電極層3a,3b,リード接続用電極層4a,4b及びリー
ド端子5a,5bの一部を封止するガラス管６とを具備して
いる。The high temperature thermistor 1 shown in FIG. 1 is a B 4 C-based composite sintered body formed by firing a powder of Al 2 O 3 which is an oxide material and B 4 C which is a conductive path forming substance. Of the cubic thermistor element body 2 and the element side electrode layers 3a, 3b made of Ni, which is a conductive material formed on both sides of the thermistor element body 2 by electroplating, and the outer surfaces of the element side electrode layers 3a, 3b. An electrode layer made of NiB or NiW, which is a conductive material formed by electroless plating, and lead connecting electrode layers 4a, 4b, and a metal made by bonding or soldering to the outer surfaces of the lead connecting electrode layers 4a, 4b. Lead terminals 5a, 5b and the thermistor element body 2,
The glass tube 6 is provided with the element-side electrode layers 3a and 3b, the lead connection electrode layers 4a and 4b, and a part of the lead terminals 5a and 5b.
次に、前記サーミスタ１の製造工程を第２図乃至第６
図をも参照して説明する。Next, the manufacturing process of the thermistor 1 will be described with reference to FIGS.
This will be described with reference to the drawings.
先ず、第２図に示すようにAl2O3とB4Cとの粉末を焼成
することにより形成した立方体状のサーミスタ素体２を
用意し、このサーミスタ素体２の両面に電解めっき法に
より第３図に示すように導電物質としてのNi製の素体側
電極層3a,3bを形成する。First, as shown in FIG. 2, a cubic thermistor element body 2 formed by firing powders of Al 2 O 3 and B 4 C is prepared, and both surfaces of this thermistor element body 2 are electroplated. As shown in FIG. 3, element-side electrode layers 3a and 3b made of Ni as a conductive material are formed.
このときのNiめっき浴（通称ワット浴）の浴条件を下
記第１表に示す。The bath conditions of the Ni plating bath (commonly called watt bath) at this time are shown in Table 1 below.
前記素体側電極層3a,3bとサーミスタ素体２との接合
状態は、第６図に模式的に示すように、粒径２乃至３μ
ｍのNi粒子がB4Cと強固に密着することから、極めて良
好な密着性を呈する。 As shown in FIG. 6, the bonding state between the element-side electrode layers 3a and 3b and the thermistor element 2 has a grain size of 2 to 3 μm.
Since the Ni particles of m firmly adhere to B 4 C, they exhibit extremely good adhesion.
次に、第３図に示す素体側電極層3a,3bの外面に対
し、無電解めっき法により第４図に示すように、導電物
質であるNi−Ｂ又はNi−Ｗ製のリード接続用電極層4a,4
bを形成する。Next, as shown in FIG. 4, on the outer surface of the element-side electrode layers 3a, 3b shown in FIG. 3, as shown in FIG. 4, a lead connecting electrode made of a conductive material, Ni-B or Ni-W, is used. Layer 4a, 4
Form b.
このときの無電解めっき法における浴条件（Ni−Ｂを
用いた場合）を下記第２表に示す。The bath conditions (when Ni-B is used) in the electroless plating method at this time are shown in Table 2 below.
前記リード接続用電極層4a,4bと、素体側電極層3a,3b
との接合状態は第６図に示すように、両電極層3a,4a
（又は3b,4b）のNi粒子同士が強固に密着することか
ら、極めて良好な密着性を呈する。 The lead-connecting electrode layers 4a, 4b and the element-side electrode layers 3a, 3b
As shown in FIG. 6, the bonding state with the two electrode layers 3a, 4a
Since (or 3b, 4b) Ni particles are firmly adhered to each other, extremely good adhesion is exhibited.
この後、第５図に示すようにリード接続用電極層4a,4
bの外面に金属製のリード端子5a,5bを接着し、さらにガ
ラス管６を所定の加熱条件の基に封止することにより、
第１図に示すサーミスタ１を製造する。After this, as shown in FIG. 5, electrode layers 4a, 4 for lead connection are formed.
By bonding the metal lead terminals 5a and 5b to the outer surface of b, and further sealing the glass tube 6 under a predetermined heating condition,
The thermistor 1 shown in FIG. 1 is manufactured.
上述したサーミスタ１によれば、サーミスタ素体２と
素体側電極層3a,3bとの密着性及び素体側電極層3a,3bと
リード接続用電極層4a,4bとの密着性がいずれも良好な
ので、リード端子5a,5bの接続工程やガラス管６の封止
工程において、サーミスタ素体２と各電極層3a,3b,4a,4
bとがこれらに生じる熱ストレスのために剥離したり、
割れを生じることが無く、接続不良が無くなって高品質
の製品となる。According to the thermistor 1 described above, the adhesion between the thermistor element body 2 and the element side electrode layers 3a, 3b and the adhesion between the element side electrode layers 3a, 3b and the lead connection electrode layers 4a, 4b are both good. In the step of connecting the lead terminals 5a, 5b and the step of sealing the glass tube 6, the thermistor element body 2 and each electrode layer 3a, 3b, 4a, 4
b and peel due to heat stress generated in these,
High quality products with no cracks and poor connection.
本発明は上述した実施例に限定されるものではなくそ
の要旨の範囲内で種々の変形が可能である。The present invention is not limited to the embodiments described above, and various modifications can be made within the scope of the invention.
［発明の効果］ 以上詳述した本発明によれば、サーミスタ素体と電極
層との密着性が良好でこれら両者間の接続状態が強固と
なり高品質の高温用サーミスタを提供できる。[Effect of the Invention] According to the present invention described in detail above, it is possible to provide a high-quality high temperature thermistor in which the adhesion between the thermistor element body and the electrode layer is good and the connection between them is strong.
特に、請求項１記載の発明によれば、サーミスタ素体
のB4Cと素体側電極層、素体側電極層とリード接続用電
極層との密着性が良いので、高品質の高温用サーミスタ
を提供できる。In particular, according to the invention of claim 1, since the B 4 C of the thermistor element body and the element side electrode layer and the element side electrode layer and the lead connection electrode layer have good adhesion, a high quality thermistor for high temperature can be obtained. Can be provided.
さらに、請求項２記載の発明によれば、サーミスタ素
体のB4Cと素体側電極層のNi,素体側電極層のNiとリード
接続用電極層のNi−ＢまたはNi−Ｗがいずれも密着性が
良いので、やはり高品質の高温用サーミスタを提供でき
る。Further, according to the invention of claim 2, B 4 C of the thermistor body and Ni of the body side electrode layer, Ni of the body side electrode layer and Ni-B or Ni-W of the lead connecting electrode layer are all Since the adhesion is good, a high quality thermistor for high temperature can be provided.
第１図は本発明のサーミスタの実施例を示す正面図、第
２図乃至第５図はそれぞれ第１図に示すサーミスタの製
造工程を示す説明図、第６図は本実施例におけるサーミ
スタ素体、素体側電極層及びリード接続用電極層の接合
状態を示す拡大模式図である。 １……サーミスタ、２……サーミスタ素体、 3a,3b……素体側電極層、 4a,4b……リード接続用電極層。FIG. 1 is a front view showing an embodiment of the thermistor of the present invention, FIGS. 2 to 5 are explanatory views showing manufacturing processes of the thermistor shown in FIG. 1, and FIG. 6 is a thermistor element body in this embodiment. FIG. 3 is an enlarged schematic view showing a joined state of an element-side electrode layer and a lead connection electrode layer. 1 ... Thermistor, 2 ... Thermistor element body, 3a, 3b ... Element body side electrode layer, 4a, 4b. Lead connecting electrode layer.
Claims (2)
形成されたサーミスタ素体と、このサーミスタ素体の両
面に電極めっきにより形成した導電物質製の素体側電極
層と、この素体側電極層の外面に無電解めっきにより形
成した導電物質製のリード接続用電極層とにより形成さ
れたことを特徴とする高温用サーミスタ。1. A thermistor element body formed by firing an oxide material and B 4 C, an element-side electrode layer made of a conductive material formed on both surfaces of the thermistor element body by electrode plating, and the element. A high temperature thermistor, which is formed by a lead connecting electrode layer made of a conductive material formed on the outer surface of the body side electrode layer by electroless plating.
料製であり、前記素体側電極層はNi製であり、前記リー
ド接続用電極層はNi−ＢまたはNi−Ｗ製である請求項１
記載の高温用サーミスタ。2. The thermistor element body is made of an Al 2 O 3 —B 4 C type temperature sensitive material, the element side electrode layer is made of Ni, and the lead connecting electrode layer is made of Ni—B or Ni—. Claim 1 which is made of W
The high temperature thermistor described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245713A JP2684066B2 (en) | 1988-09-29 | 1988-09-29 | High temperature thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245713A JP2684066B2 (en) | 1988-09-29 | 1988-09-29 | High temperature thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0294403A JPH0294403A (en) | 1990-04-05 |
| JP2684066B2 true JP2684066B2 (en) | 1997-12-03 |
Family
ID=17137696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63245713A Expired - Fee Related JP2684066B2 (en) | 1988-09-29 | 1988-09-29 | High temperature thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2684066B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100452353B1 (en) * | 2002-01-09 | 2004-10-12 | 엘지전자 주식회사 | The apparatus of opening and shutting for Drum-washer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360501A (en) * | 1986-09-01 | 1988-03-16 | 株式会社村田製作所 | Positive characteristic thermistor |
| JPS63136502A (en) * | 1986-11-27 | 1988-06-08 | ティーディーケイ株式会社 | Thermistor device |
-
1988
- 1988-09-29 JP JP63245713A patent/JP2684066B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0294403A (en) | 1990-04-05 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |