JP2704321B2 - Method for manufacturing optical semiconductor device - Google Patents
Method for manufacturing optical semiconductor deviceInfo
- Publication number
- JP2704321B2 JP2704321B2 JP3117202A JP11720291A JP2704321B2 JP 2704321 B2 JP2704321 B2 JP 2704321B2 JP 3117202 A JP3117202 A JP 3117202A JP 11720291 A JP11720291 A JP 11720291A JP 2704321 B2 JP2704321 B2 JP 2704321B2
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- resin
- hole
- concave surface
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、リードレスタイプの樹
脂封止型光半導体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a leadless type resin-sealed optical semiconductor device.
【0002】[0002]
【従来の技術】従来のリードレスタイプの光半導体装置
における面実装デバイス(以下、SMDと称す)の構造
および製造方法について図10〜図12にて説明する。2. Description of the Related Art The structure and manufacturing method of a surface mount device (hereinafter referred to as SMD) in a conventional leadless type optical semiconductor device will be described with reference to FIGS.
【0003】まず、図10の如く、使用する基板Xの構
造は、電極を形成するためのスルーホルメツキ用の貫通
孔1および光半導体素子(受発光素子)を搭載するため
のヘツダー部5と、光半導体素子8と電極を電気的に金
線9で結線するための結線部6とが設けられている。こ
の基板Xの材質としてはガラスエポキシ樹脂等が用いら
れている。First, as shown in FIG. 10, the structure of a substrate X used includes a through hole 1 for through-hole plating for forming an electrode and a header portion 5 for mounting an optical semiconductor element (light receiving / emitting element). And a connection portion 6 for electrically connecting the optical semiconductor element 8 and the electrode with the gold wire 9. As a material of the substrate X, glass epoxy resin or the like is used.
【0004】図10に示す光半導体素子8は、基板X上
に積層された立体メツキパターン7のヘツダー部5にダ
イボンドされ、さらにこの素子8はメツキパターン7の
結線部6と金線9により結線される。そして、光半導体
素子8は、図11の如く、透光性樹脂を用いてトランス
フアモールドによりレンズ11を有する形で成形(パツ
ケージング)される。この場合、パツケージ10自身が
ランナー部を兼用する構造となつている。その後、ダイ
シングライン12でダイシングされ、図13のような、
単独のSMD光半導体装置が製造される。An optical semiconductor device 8 shown in FIG. 10 is die-bonded to a header 5 of a three-dimensional plating pattern 7 laminated on a substrate X. Further, this device 8 is connected to a connection portion 6 of the plating pattern 7 by a gold wire 9. Is done. Then, as shown in FIG. 11, the optical semiconductor element 8 is molded (packaged) using a translucent resin by transfer molding so as to have the lens 11. In this case, the package 10 itself has a structure that also serves as a runner portion. Thereafter, dicing is performed on a dicing line 12, as shown in FIG.
A single SMD optical semiconductor device is manufactured.
【0005】また、トランスフアモールドの方法として
は、図12の如く、ランナー部2をパツケージ10とな
る部分以外に設け、ランナー部2からゲート4を介して
樹脂を注入してパツケージングを行い成形が完了する。
その後、ランナー部2およびゲート4を除去し、ダイシ
ングライン12でダイシングされ単独のSMD光半導体
装置が完成する。As a transfer molding method, as shown in FIG. 12, a runner portion 2 is provided in a portion other than a portion to be a package 10, and a resin is injected from the runner portion 2 through a gate 4 to perform packaging and molding. Is completed.
Thereafter, the runner section 2 and the gate 4 are removed, and dicing is performed on the dicing line 12 to complete a single SMD optical semiconductor device.
【0006】[0006]
【発明が解決しようとする課題】従来の光半導体装置の
製造方法では、以下に示す問題点を有する。The conventional method for manufacturing an optical semiconductor device has the following problems.
【0007】(1)図11のトランスフアモールド方法
でパツケージ10を成形して成る光半導体装置において
は、単独の光半導体装置にカツトするダイシング工程に
おいて直接パツケージ10をカツトするため、光学素子
の周囲では透光性樹脂と基板との界面に剥離、クラツク
等が発生する可能性が有り、製品としての信頼性に悪影
響を及ぼす場合がある。(1) In the optical semiconductor device formed by molding the package 10 by the transfer molding method shown in FIG. 11, since the package 10 is directly cut in the dicing step of cutting into a single optical semiconductor device, the periphery of the optical element is removed. In this case, there is a possibility that peeling, cracks, etc. may occur at the interface between the light-transmitting resin and the substrate, which may adversely affect the reliability of the product.
【0008】(2)図12のトランスフアモールド方法
でパツケージ10を形成して成る光半導体装置において
は、(1)で示すようなカツトの際の悪影響は少ない
が、ランナー部2をパツケージ10となる部分以外に設
けるために、基板当たりの単独の光半導体装置の取れ数
にロスが生じ、かえつて生産効率が悪い。(2) In the optical semiconductor device in which the package 10 is formed by the transfer molding method shown in FIG. 12, although there is little adverse effect at the time of cutting as shown in (1), the runner 2 is connected to the package 10. Since the optical semiconductor device is provided in a portion other than the above portion, a loss occurs in the number of single optical semiconductor devices per substrate, and the production efficiency is rather poor.
【0009】本発明は、上記に鑑み、基板切断時の透光
性樹脂と絶縁樹脂基板との剥離等の発生を防止し、しか
も一つの基板当りの光半導体装置の取れ数のロスをなく
して生産効率を向上させる光半導体装置の製造方法の提
供を目的とする。SUMMARY OF THE INVENTION In view of the above, the present invention prevents the occurrence of separation between a light-transmitting resin and an insulating resin substrate when cutting a substrate, and eliminates a loss in the number of optical semiconductor devices per substrate. An object of the present invention is to provide a method for manufacturing an optical semiconductor device that improves production efficiency.
【0010】[0010]
【課題を解決するための手段】(1)本発明請求項1に
よる課題解決手段は、図1ないし図9の如く、絶縁樹脂
基板Xに表面から裏面にかけて立体メツキパターン7が
設けられ、該立体メツキパターン7上に複数の光半導体
素子8が搭載され、該複数の光半導体素子8を透光性樹
脂にてモールドして複数のパツケージ10が形成され、
該パツケージ10を分離独立させるため前記絶縁樹脂基
板Xをダイシングライン12に沿つて多分割に切断して
成る面実装型光半導体装置の製造方法において、前記絶
縁樹脂基板Xは、表面側に光半導体素子8が搭載される
複数のヘツダー部5が設けられ、該各ヘツダー部5直下
の裏面側に透光性樹脂のランナー部となる凹面2が設け
られ、透光性樹脂を凹面2からヘツダー部5側に導く樹
脂導入用の貫通孔4が、前記パツケージ10をダイシン
グライン12から回避して形成するよう、凹面2に連通
して設けられてなり、前記立体メツキパターン7は、前
記ヘツダー部5からスルーホールメツキ用の貫通孔1を
介して裏面に達するように形成され、透光性樹脂を前記
凹面2から樹脂導入用の貫通孔4を介してヘツダー部5
側に導いて、基板Xの裏面と面一となるように凹面2を
埋めて各光半導体素子8をモールドするものである。Means for Solving the Problems (1) According to the first aspect of the present invention, as shown in FIGS. 1 to 9, a three-dimensional plating pattern 7 is provided on an insulating resin substrate X from the front surface to the back surface. A plurality of optical semiconductor elements 8 are mounted on the plating pattern 7, and the plurality of optical semiconductor elements 8 are molded with a translucent resin to form a plurality of packages 10,
In a method of manufacturing a surface-mount type optical semiconductor device, in which the insulating resin substrate X is cut into multiple parts along a dicing line 12 so as to separate and separate the package 10, the insulating resin substrate X has an optical semiconductor A plurality of header portions 5 on which the elements 8 are mounted are provided, and a concave surface 2 serving as a runner portion of the translucent resin is provided on the back surface immediately below each of the header portions 5. holes 4 for resin introduction that leads to 5 side, so as to form to avoid the bobbin 10 from the dicing line 12, it is provided in communication with the concave 2, the stereoscopic plated pattern 7, before
From the header part 5 to the through hole 1 for through hole plating
The light-transmitting resin is formed so as to reach the rear surface through the through hole 4 for introducing the resin from the concave surface 2 through the header portion 5.
And the concave surface 2 so as to be flush with the back surface of the substrate X.
Each optical semiconductor element 8 is molded by filling .
【0011】(2)請求項2による課題解決手段は、図
1ないし図4の如く、請求項1記載の樹脂導入用の貫通
孔4が請求項1記載の凹面2よりパッケージ部近傍に貫
通され、透光性樹脂を凹面2から樹脂導入用の貫通孔4
を介して注入して各光半導体素子8をモールドするもの
である。(2) According to a second aspect of the present invention, as shown in FIGS. 1 to 4, the resin introduction through hole 4 according to the first aspect is penetrated from the concave surface 2 according to the first aspect to the vicinity of the package portion. The transparent resin is passed through the concave surface 2 through the through hole 4 for introducing the resin.
To mold each optical semiconductor element 8.
【0012】(3)請求項3による課題解決手段は、図
5ないし図9の如く、請求項1記載の樹脂導入用の貫通
孔4が請求項1記載の凹面2より直接パッケージ部に貫
通され、透光性樹脂を凹面2から樹脂導入用の貫通孔4
を介して注入して各光半導体素子8をモールドするもの
である。(3) According to a third aspect of the present invention, as shown in FIGS. 5 to 9, the resin introduction through hole 4 according to the first aspect is directly penetrated from the concave surface 2 according to the first aspect to the package portion. The transparent resin is passed through the concave surface 2 through the through hole 4 for introducing the resin.
To mold each optical semiconductor element 8.
【0013】[0013]
【作用】上記請求項1〜3による課題解決手段におい
て、透光性樹脂をダイシングライン12よりもヘツダー
部5側に流入させるよう、樹脂注入用の貫通孔4を透光
性樹脂のランナー部となる凹面2に連通させることで、
光半導体素子8のモールド時に、ダイシングライン12
を回避してパツケージ10を形成することができるか
ら、パツケージ10をダイシングする際、パツケージ1
0を直接カツトしない構造とすることができる。このた
め、絶縁樹脂基板Xの切断時に透光性樹脂と絶縁樹脂基
板Xとの界面に剥離等の発生を防ぐことができる。In the means for solving the problems according to the first to third aspects, the through hole 4 for resin injection is formed with the runner portion of the light-transmitting resin so that the light-transmitting resin flows toward the header portion 5 from the dicing line 12. By communicating with the concave surface 2
When the optical semiconductor element 8 is molded, the dicing line 12
Therefore, when the package 10 is diced, the package 1 can be formed.
It is possible to adopt a structure in which 0 is not directly cut. For this reason, at the time of cutting the insulating resin substrate X, occurrence of peeling or the like at the interface between the translucent resin and the insulating resin substrate X can be prevented.
【0014】また、図12のようにランナー部をパツケ
ージとなる部分以外に設けることなく、ランナー部とな
る凹面2をヘツダー部5直下の裏面側に設けているの
で、一つの絶縁樹脂基板当たりの単独の光半導体装置の
取れ数にロスを無くことできる。Further, since the concave surface 2 serving as the runner portion is provided on the back surface immediately below the header portion 5 without providing the runner portion other than the portion serving as the package as shown in FIG. Loss in the number of single optical semiconductor devices can be eliminated.
【0015】[0015]
【実施例】以下、本発明の実施例を図面に基づき説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
【0016】〈第一実施例〉図1は本発明第一実施例の
光半導体装置に係る絶縁樹脂基板を示しており、同図
(a)は平面図、同図(b)は同図(a)のA−A断面
図、同図(c)は同図(a)のB−B断面図、図2は同
じく光半導体素子搭載完了時点の状態を示す図、図3は
パツケージ形成完了時点の状態を示す図、図4は同じく
光半導体装置の完成品を示しており、同図(a)は平面
図、同図(b)は同図(a)のC−C断面図、同図
(c)は同図(a)のD−D断面図である。<First Embodiment> FIGS. 1A and 1B show an insulating resin substrate according to an optical semiconductor device of a first embodiment of the present invention. FIG. 1A is a plan view, and FIG. 2A is a cross-sectional view taken along the line AA, FIG. 2C is a cross-sectional view taken along the line BB of FIG. 2A, FIG. FIG. 4 also shows a completed optical semiconductor device, FIG. 4 (a) is a plan view, FIG. 4 (b) is a cross-sectional view taken along line CC of FIG. 4 (a), and FIG. (C) is a DD sectional view of the same figure (a).
【0017】図示の如く、本実施例のリードレスタイプ
の樹脂封止型光半導体装置は、絶縁樹脂基板Xに立体メ
ツキパターン7が設けられ、該立体メツキパターン7上
に複数の光半導体素子8が搭載され、該複数の光半導体
素子8を透光性樹脂にてモールドして複数のパツケージ
10が形成され、該パツケージ10を分離独立させるた
め前記絶縁樹脂基板Xをダイシングライン12に沿つて
多分割に切断して成る。As shown in the figure, in the leadless type resin-sealed optical semiconductor device of this embodiment, a three-dimensional plating pattern 7 is provided on an insulating resin substrate X, and a plurality of optical semiconductor elements 8 are provided on the three-dimensional plating pattern 7. Are mounted, and a plurality of packages 10 are formed by molding the plurality of optical semiconductor elements 8 with a translucent resin. In order to separate and independent the packages 10, the insulating resin substrate X is mounted along a dicing line 12. It consists of cutting into parts.
【0018】前記絶縁樹脂基板Xは、図1の如く、表面
に、光半導体素子8がダイボンドされる複数の凹状ヘツ
ダー部5と、該ヘツダー部5上にダイボンドされた光半
導体素子8と金線9により結線されることにより、光半
導体素子8と裏面電極7aとを電気的に接続するための
結線部6とが設けられ、絶縁樹脂基板X切断後、前記電
極7aを形成するためのスルーホールメツキ用の貫通孔
1が設けられ、前記各ヘツダー部5直下の裏面側に透光
性樹脂のランナー部となる凹面2が設けられ、透光性樹
脂を凹面2からヘツダー部5側(絶縁樹脂基板X表面
側)に導くサブランナー部となる貫通孔4が凹面2に連
通して設けられ、該貫通孔4の表面側にヘツダー部5へ
注入樹脂を案内するためのゲート部となる凹部4aが設
けられている。そして、前記サブランナー部となる貫通
孔4は、前記パツケージ10をダイシングライン12を
回避して形成するよう、前記凹面2よりパツケージ部近
傍に貫通して配置されている。As shown in FIG. 1, the insulating resin substrate X has, on its surface, a plurality of concave header portions 5 on which the optical semiconductor element 8 is die-bonded, and the optical semiconductor element 8 die-bonded on the header section 5 and a gold wire. 9, the connection portion 6 for electrically connecting the optical semiconductor element 8 and the back surface electrode 7a is provided. After cutting the insulating resin substrate X , a through hole for forming the electrode 7a is provided. A through hole 1 for plating is provided, and a concave surface 2 serving as a runner portion of a light-transmitting resin is provided on the back surface immediately below each of the header portions 5. A through hole 4 serving as a sub-runner portion leading to the substrate X surface side is provided in communication with the concave surface 2, and a concave portion 4 a serving as a gate portion for guiding the injected resin to the header portion 5 on the surface side of the through hole 4. Is provided. The through hole 4 to be the Sabra emissions toner unit, the bobbin 10 so as to form to avoid the dicing line 12, disposed through from the concave surface 2 near Pas tree cage portion.
【0019】上記光半導体装置の製造方法について詳述
する。The method for manufacturing the optical semiconductor device will be described in detail.
【0020】まず、図2の如く、絶縁樹脂基板Xの立体
メツキパターン7のヘツダー部5に複数の光半導体素子
8をダイボンドし、光半導体素子8と結線部6とを金線
9にて結線して光半導体素子8と電極7aとを電気的に
接続する。つぎに、絶縁樹脂基板Xをモールド金型にセ
ツトし、トランスフアモールドにて透光性樹脂を射出す
る。そうすると、透光性樹脂はランナー部となる凹面2
からサブランナー部となる貫通孔4を通り、ゲート部と
なる凹部4aを介して光半導体素子8がダイボンドされ
たヘツダー部5の周囲に注入される(図4参照)。First, as shown in FIG. 2, a plurality of optical semiconductor elements 8 are die-bonded to the header section 5 of the three-dimensional pattern 7 of the insulating resin substrate X, and the optical semiconductor elements 8 and the connection section 6 are connected by gold wires 9. Then, the optical semiconductor element 8 and the electrode 7a are electrically connected. Next, the insulating resin substrate X is set in a mold, and a translucent resin is injected by a transfer mold. Then, the translucent resin becomes the concave surface 2 which becomes the runner part.
Then, the optical semiconductor element 8 is injected into the periphery of the die-bonded header portion 5 through the through hole 4 serving as the sub-runner portion and the concave portion 4a serving as the gate portion (see FIG. 4).
【0021】このとき、サブランナー部となる貫通孔4
は、透光性樹脂をダイシングライン12よりヘツダー部
5側に流入させるよう、凹面2よりパッケージ部近傍に
貫通して配置されているので、パツケージ10はダイシ
ングライン12を回避してその内側に形成されることに
なる。なお、パツケージ10の上部には、高出力好感度
を得るためのレンズ11が形成される。At this time, the through hole 4 serving as a sub-runner portion
Is arranged so as to allow the translucent resin to flow toward the header portion 5 side from the dicing line 12 so as to penetrate near the package portion from the concave surface 2, so that the package 10 is formed inside the dicing line 12 avoiding the dicing line 12. Will be done. Note that a lens 11 for obtaining high output favorable sensitivity is formed on the upper part of the package 10.
【0022】最後に、ダイシングライン12(図3参
照)でダイシングを行い絶縁樹脂基板Xを多分割し、単
独のSMD光半導体装置が完成する。このダイシングの
際、パツケージ10はダイシングライン12を回避して
その内側に形成されているから、パツケージ10の外側
で絶縁樹脂基板Xがカツトされるため、光半導体素子8
周囲の透光性樹脂と絶縁樹脂基板Xの界面に及ぶ剥離、
クラツク等の影響は生じない。Finally, dicing is performed on the dicing line 12 (see FIG. 3) to divide the insulating resin substrate X into many parts, thereby completing a single SMD optical semiconductor device. In this dicing, the package 10 is formed inside the dicing line 12 while avoiding the dicing line 12, so that the insulating resin substrate X is cut outside the package 10 so that the optical semiconductor element 8 is cut.
Peeling over the interface between the surrounding translucent resin and the insulating resin substrate X ,
There is no cracking effect.
【0023】また、図12のようにランナー部をパツケ
ージとなる部分以外に設けることなく、モールド時にラ
ンナー部となる凹面2をヘツダー部5直下の裏面側に設
けているので、一つの絶縁基板樹脂基板当たりの光半導
体装置の取れ数についても従来のようにロスを生じな
い。Further, as shown in FIG. 12, the concave surface 2 which becomes the runner portion at the time of molding is provided on the back surface immediately below the header portion 5 without providing the runner portion other than the portion which becomes the package. No loss occurs in the number of optical semiconductor devices per substrate as in the related art.
【0024】〈第二実施例〉 図5は本発明第二実施例の光半導体装置に係る絶縁樹脂
基板を示しており、同図(a)は平面図、同図(b)は
同図(a)のE−E断面図、同図(c)は同図(a)の
F−F断面図、図6は同じく光半導体素子搭載完了時点
の状態を示す図、図7はパツケージ形成完了時点の状態
を示す図、図8は同じく光半導体装置の完成品を示して
おり、同図(a)は平面図、同図(b)は同図(a)の
G−G断面図、同図(c)は同図(a)のH−H断面図
である。<Second Embodiment> FIGS. 5A and 5B show an insulating resin substrate according to an optical semiconductor device of a second embodiment of the present invention. FIG. 5A is a plan view, and FIG. 7A is a cross-sectional view taken along the line EE, FIG. 7C is a cross-sectional view taken along the line FF of FIG. 7A, FIG. FIG. 8 also shows a completed optical semiconductor device, FIG. 8 (a) is a plan view, FIG. 8 (b) is a sectional view taken along line GG of FIG. 8 (a), and FIG. (C) is an HH sectional view of the same figure (a).
【0025】本実施例の絶縁樹脂基板Xは、図5の如
く、貫通孔4をトランスフアモールド時にランナー部と
なる凹面2より各ヘツダー部5に直接透光性樹脂を注入
するためのゲート部として使用されるよう、凹面2より
直接パッケージ部に貫通して配置されており、他の構成
は第一実施例同様である。In the insulating resin substrate X of this embodiment, as shown in FIG. 5, a through hole 4 is formed in a gate portion for directly injecting a translucent resin into each header portion 5 from a concave surface 2 serving as a runner portion during transfer molding. And is arranged so as to penetrate the package portion directly from the concave surface 2, and the other configuration is the same as that of the first embodiment.
【0026】そして、第一実施例で説明した同様の工
程、すなわち図6のダイボンド、ワイヤボンド工程、図
7のモールド工程を経て最終工程でダイシングライン1
2でダイシングを行い絶縁樹脂基板Xを多分割し、図8
に示す単独のSMD光半導体装置が完成する。したがつ
て、本実施例においても、第一実施例と同様の効果を得
ることができる。Then, the dicing line 1 is formed in the final step through the same steps described in the first embodiment, ie, the die bonding and wire bonding steps shown in FIG. 6 and the molding step shown in FIG.
8 is performed to divide the insulating resin substrate X into many parts.
Is completed. Therefore, in this embodiment, the same effect as in the first embodiment can be obtained.
【0027】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that many modifications and changes can be made to the above-described embodiment within the scope of the present invention.
【0028】例えば、パツケージ10のレンズの形状と
して、図9に示すようなインナーレンズ11aの形状に
することで、自動搭載機等のハンドリング性向上を図る
ことができる。For example, by making the shape of the lens of the package 10 into the shape of the inner lens 11a as shown in FIG. 9, the handling of an automatic mounting machine or the like can be improved.
【0029】[0029]
【発明の効果】以上の説明から明らかな通り、本発明請
求項1〜3によると、パツケージをダイシングラインを
回避して形成することができるから、ダイシングにて絶
縁樹脂基板を多分割する際にパツケージを直接カツトし
ないで済む。このため、透光性樹脂と絶縁樹脂基板の界
面における剥離等の発生が無くなり、製品としての信頼
性に悪影響を及ぼすことを解消できる。As is clear from the above description, according to the first to third aspects of the present invention, the package can be formed avoiding the dicing line. There is no need to cut the packaging directly. For this reason, the occurrence of peeling or the like at the interface between the translucent resin and the insulating resin substrate is eliminated, and the adverse effect on the reliability as a product can be solved.
【0030】また、ランナー部をパツケージとなる部分
以外に設けることなく、ランナー部となる凹面をヘツダ
ー部直下の裏面側に設けているため、一つの絶縁樹脂基
板当たりの光半導体装置の取れ数にロスが無くなり、生
産効率が向上する。また、絶縁樹脂基板の裏面に透光性
樹脂のランナー部となる凹面が設けられることにより裏
面をフラツトに形成でき、立体メツキパターンは絶縁樹
脂基板の表面から裏面に形成されているので、別の実装
基板への面実装が容易となるとともに、基板を多分割に
切断する際のダイシング装置への装着が容易となる。さ
らに、基板の裏面に凹面を設けるため、金型側に透光性
樹脂を注入するためのランナー部を設ける必要がなく、
そのため、金型の構造を簡略化でき製造コストの低減化
を図ることができる。 Further, since the concave surface serving as the runner portion is provided on the back surface immediately below the header portion without providing the runner portion other than the portion serving as the package, the number of optical semiconductor devices per insulating resin substrate can be reduced. Loss is eliminated and production efficiency is improved. In addition, the transparent back surface of the insulating resin substrate
By providing a concave surface that becomes the resin runner,
The surface can be formed flat, and the three-dimensional
Since it is formed from the front surface to the back surface of the resin substrate, another mounting
Easier surface mounting on the board and dividing the board into multiple parts
Attachment to a dicing device when cutting is facilitated. Sa
In addition, since a concave surface is provided on the back surface of the substrate, the mold
There is no need to provide a runner for injecting resin,
Therefore, the structure of the mold can be simplified and the manufacturing cost can be reduced.
Can be achieved.
【図1】図1は本発明第一実施例の光半導体装置に係る
絶縁樹脂基板を示しており、同図(a)は平面図、同図
(b)は同図(a)のA−A断面図、同図(c)は同図
(a)のB−B断面図である。FIGS. 1A and 1B show an insulating resin substrate according to an optical semiconductor device of a first embodiment of the present invention, wherein FIG. 1A is a plan view, and FIG. A sectional view and FIG. 3C are BB sectional views of FIG.
【図2】図2は同じく光半導体素子搭載完了時点の状態
を示す図である。FIG. 2 is a diagram showing a state at the time of completion of mounting the optical semiconductor element.
【図3】図3はパツケージ形成完了時点の状態を示す図
である。FIG. 3 is a diagram showing a state at the time of completion of package formation.
【図4】図4は同じく光半導体装置の完成品を示してお
り、同図(a)は平面図、同図(b)は同図(a)のC
−C断面図、同図(c)は同図(a)のD−D断面図で
ある。FIGS. 4A and 4B show a completed optical semiconductor device, in which FIG. 4A is a plan view, and FIG.
FIG. 3C is a cross-sectional view, and FIG. 3C is a cross-sectional view taken along the line DD in FIG.
【図5】図5は本発明第二実施例の光半導体装置に係る
絶縁樹脂基板を示しており、同図(a)は平面図、同図
(b)は同図(a)のE−E断面図、同図(c)は同図
(a)のF−F断面図である。FIGS. 5A and 5B show an insulating resin substrate according to the optical semiconductor device of the second embodiment of the present invention, wherein FIG. 5A is a plan view, and FIG. FIG. 7C is a sectional view taken along line E-F of FIG.
【図6】図6は同じく光半導体素子搭載完了時点の状態
を示す図である。FIG. 6 is a diagram showing a state at the time of completion of mounting the optical semiconductor element.
【図7】図7はパツケージ形成完了時点の状態を示す図
である。FIG. 7 is a diagram showing a state at the time of completion of package formation.
【図8】図8は同じく光半導体装置の完成品を示してお
り、同図(a)は平面図、同図(b)は同図(a)のG
−G断面図、同図(c)は同図(a)のH−H断面図で
ある。8A and 8B show a completed optical semiconductor device. FIG. 8A is a plan view, and FIG. 8B is a plan view of G in FIG. 8A.
FIG. 2C is a sectional view taken along line H-H of FIG.
【図9】図9は他の実施例に係る光半導体装置の完成品
を示しており、同図bは同図aのI−I断面図、同図c
は同図aのJ−J断面図である。9 shows a completed optical semiconductor device according to another embodiment, FIG. 9B is a sectional view taken along line II of FIG. 9A, and FIG.
Is a JJ sectional view of FIG.
【図10】図10は従来の光半導体装置の製造工程にお
いて光半導体素子搭載完了時点での状態を示す図であ
る。FIG. 10 is a view showing a state at the time of completion of mounting of an optical semiconductor element in a manufacturing process of a conventional optical semiconductor device.
【図11】図11は同じくパツケージ形成完了時点の状
態を示す図である。Figure 11 is a diagram likewise illustrating the condition of the path Tsukeji formation completion.
【図12】図12はランナー部をパツケージ以外に設け
た場合のパツケージ形成完了時点の状態を示す図であ
る。FIG. 12 is a view showing a state at the time of completion of package formation when a runner portion is provided other than the package.
【図13】図13は従来の光半導体装置の完成品を示し
ており、同図(a)は平面図、同図(b)は同図(a)
のK−K断面図、同図(c)は同図(a)のL−L断面
図である。FIG. 13 shows a completed product of a conventional optical semiconductor device. FIG. 13 (a) is a plan view, and FIG. 13 (b) is a view of FIG.
(C) is a sectional view taken along line LL in (a) of FIG.
1 スルーホールメツキ用の貫通孔 2 凹面 4 樹脂導入用の貫通孔 5 ヘツダー部 7 立体メツキパターン 8 光半導体素子 10 パツケージ 12 ダイシングライン X 絶縁樹脂基板 REFERENCE SIGNS LIST 1 through hole for through hole plating 2 concave surface 4 through hole for resin introduction 5 header portion 7 three-dimensional plating pattern 8 optical semiconductor element 10 package 12 dicing line X insulating resin substrate
Claims (3)
体メツキパターンが設けられ、該立体メツキパターン上
に複数の光半導体素子が搭載され、該複数の光半導体素
子を透光性樹脂にてモールドして複数のパツケージが形
成され、該パツケージを分離独立させるため前記絶縁樹
脂基板をダイシングラインに沿つて多分割に切断して成
る面実装型光半導体装置の製造方法において、前記絶縁
樹脂基板は、表面側に光半導体素子が搭載される複数の
ヘツダー部が設けられ、該各ヘツダー部直下の裏面側に
透光性樹脂のランナー部となる凹面が設けられ、透光性
樹脂を凹面からヘツダー部側に導く樹脂導入用の貫通孔
が、前記パツケージをダイシングラインから回避して形
成するよう、凹面に連通して設けられて成り、前記立体
メツキパターンは、前記ヘツダー部からスルーホールメ
ツキ用の貫通孔を介して裏面に達するように形成され、
透光性樹脂を前記凹面から樹脂導入用の貫通孔を介して
ヘツダー部側に導いて、基板の裏面と面一となるように
凹面を埋めて各光半導体素子をモールドすることを特徴
とする光半導体装置の製造方法。An insulated resin substrate is provided with a vertical plating pattern from a front surface to a rear surface , and a plurality of optical semiconductor elements are mounted on the three-dimensional plating pattern. A plurality of packages are formed by molding with a resin, and the insulating resin substrate is cut into multiple parts along a dicing line in order to separate and separate the packages. The resin substrate is provided with a plurality of header portions on which the optical semiconductor element is mounted on the front surface side, and a concave surface serving as a runner portion of the light-transmitting resin is provided on the back surface immediately below each of the header portions, and the light-transmitting resin is provided. through hole for resin introduction leading from concave to Hetsuda portion side, so as to form by avoiding the bobbin from the dicing lines, it becomes provided to communicate with the concave surface, the three-dimensional
The plating pattern is formed through the through hole
It is formed to reach the back surface through the through hole for wood,
The translucent resin is guided from the concave surface through the through hole for resin introduction toward the header portion so that it is flush with the back surface of the substrate.
A method for manufacturing an optical semiconductor device, wherein each optical semiconductor element is molded by filling a concave surface .
求項1記載の凹面よりパッケージ部近傍に貫通され、透
光性樹脂を凹面から樹脂導入用の貫通孔を介して注入し
て各光半導体素子をモールドすることを特徴とする光半
導体装置の製造方法。2. The through hole for introducing a resin according to claim 1 is penetrated from the concave surface according to claim 1 to the vicinity of the package portion, and a transparent resin is injected from the concave surface through the through hole for introducing the resin. A method for manufacturing an optical semiconductor device, wherein each optical semiconductor element is molded.
求項1記載の凹面より直接パッケージ部に貫通され、透
光性樹脂を凹面から樹脂導入用の貫通孔を介して注入し
て各光半導体素子をモールドすることを特徴とする光半
導体装置の製造方法。3. The through hole for introducing resin according to claim 1 is directly penetrated into the package portion from the concave surface according to claim 1, and a light-transmitting resin is injected from the concave surface through the through hole for introducing resin. A method for manufacturing an optical semiconductor device, wherein each optical semiconductor element is molded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3117202A JP2704321B2 (en) | 1991-05-22 | 1991-05-22 | Method for manufacturing optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3117202A JP2704321B2 (en) | 1991-05-22 | 1991-05-22 | Method for manufacturing optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04345073A JPH04345073A (en) | 1992-12-01 |
| JP2704321B2 true JP2704321B2 (en) | 1998-01-26 |
Family
ID=14705920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3117202A Expired - Fee Related JP2704321B2 (en) | 1991-05-22 | 1991-05-22 | Method for manufacturing optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2704321B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3838535B2 (en) * | 1999-07-05 | 2006-10-25 | ローム株式会社 | Manufacturing method of chip type light emitting diode |
| JP2001332767A (en) * | 2000-05-24 | 2001-11-30 | Rohm Co Ltd | LED element and manufacturing method thereof |
| US6856006B2 (en) * | 2002-03-28 | 2005-02-15 | Siliconix Taiwan Ltd | Encapsulation method and leadframe for leadless semiconductor packages |
| KR100562443B1 (en) * | 2004-07-12 | 2006-03-17 | 김성구 | Mold for Chip LED Package |
| JP5367668B2 (en) * | 2009-11-17 | 2013-12-11 | スタンレー電気株式会社 | Light emitting device and manufacturing method thereof |
| KR101455205B1 (en) * | 2014-04-29 | 2014-10-27 | 주식회사 다이나테크 | Corrector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS611067A (en) * | 1984-06-13 | 1986-01-07 | Stanley Electric Co Ltd | Molding method of led chip mounted on printed board |
-
1991
- 1991-05-22 JP JP3117202A patent/JP2704321B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04345073A (en) | 1992-12-01 |
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