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JP2712177B2 - Q switch element - Google Patents
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JP2712177B2 - Q switch element - Google Patents

Q switch element

Info

Publication number
JP2712177B2
JP2712177B2 JP62129878A JP12987887A JP2712177B2 JP 2712177 B2 JP2712177 B2 JP 2712177B2 JP 62129878 A JP62129878 A JP 62129878A JP 12987887 A JP12987887 A JP 12987887A JP 2712177 B2 JP2712177 B2 JP 2712177B2
Authority
JP
Japan
Prior art keywords
piezoelectric body
switch element
electrode
gold
input transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62129878A
Other languages
Japanese (ja)
Other versions
JPS63296383A (en
Inventor
健 葛西
譲 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62129878A priority Critical patent/JP2712177B2/en
Publication of JPS63296383A publication Critical patent/JPS63296383A/en
Application granted granted Critical
Publication of JP2712177B2 publication Critical patent/JP2712177B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123Q-switching
    • H01S3/117Q-switching using intracavity acousto-optic devices

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はQスイッチ素子に係り、特に入力トランスデ
ューサーの電極の1部に、局所的に電場が集中して高温
となることを防ぐよう電極全体に電力供給できるQスイ
ッチ素子に関する。 [従来の技術] 従来のQスイッチ素子の側面図を第2図に示す。Qス
イッチ素子は、石英ガラスやLiNbO3結晶等よりなるQス
イッチ媒体1と、該Qスイッチ媒体1の1面に取り付け
た入力トランスデューサー用の圧電体2と、駆動回路と
のインピーダンスのマッチングを行う整合回路3と、パ
ッケージ8より構成される。Qスイッチ素子への電力供
給は、圧電体2と整合回路3とを金片5により導電接続
して行う。第3図に、Qスイッチ素子の電力供給部の拡
大側面図を示す。従来、圧電体2の電極部より小さい面
積の金片5を電極部に面接触して導電接続していた。た
とえば、電極面積5×21mm2に対し、金片5の接触部は
3×12mm2で約1/3の接触面積である。また、金片5のエ
ッジが全て電極周辺より内部で接触していた。第4図に
入力トランスデューサーの圧電体の平面図を示す。Qス
イッチ媒体1の1面に入力トランスデューサー用の圧電
体2を取り付けて圧電体上の電極に金片を接触させる。
斜線部は金片の接触部6であり、エッジ部7は全て電極
周辺より内部で接触している。 [発明の解決しようとする問題点] 従来、金片の接触部6のエッジ部7が、内部より電場
の集中が起き易く、特異点と称する強電場の発生箇所と
なっていた。その結果、高温となり圧電体とQスイッチ
媒体1との接合部が溶融し、電気的特性、光学的特性を
損なうという問題点を有していた。 [問題点を解決するための手段] 本発明は、前述の問題点を解決すべくなされたもので
あり、Qスイッチ素子を駆動する入力トランスデューサ
ーと整合回路との導電接続を、入力トランスデューサー
の圧電体上の電極全体を覆って面接触する、前記電極よ
り大きい面積の金片又は金メッキを施した金属材料によ
って行うことを特徴とするQスイッチ素子を提供するも
のである。 [作用] 本発明において、金片は圧電体との接触部の特異点を
なくすように作用し、Qスイッチ素子を最大出力用に動
作させ得る。つまり、圧電体上には特異点がなく電場の
集中が非常に起きにくい接触構造となるので、大出力に
なるほど増大する電場による発熱の効果を極力抑制する
効果を有する。 [実施例] 第1図は、本発明の1実施例であり、入力トランスデ
ューサーの圧電体の平面図を示す。Qスイッチ媒体1の
1面に入力トランスデューサー用の圧電体2が取り付け
てあり、金片5を圧電体2上の電極全体を覆って面接触
させている。斜線部は接触部4である。金片5の面積は
少なくとも圧電体もしくは圧電体の電極部の面積より大
きく、形状は金片のエッジが必ず圧電体のエッジより外
側になければならない。電極の面積は5.5×21mm2である
のに対し、金片5の面積は9×22mm2であり、完全に電
極を覆う構造となっている。又、金片5の代わりに金メ
ッキを施した金属材料も使用できるが、信頼性の点で金
片の方が好ましい。 [発明の効果] 本発明は、Qスイッチ素子の電気的、光学的特性を劣
化させることなく、高出力のレーザー装置に長時間使用
できるという優れた効果を有する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Q-switch element, and more particularly to an electrode for preventing an electric field from locally concentrating on a part of an electrode of an input transducer and increasing the temperature. The present invention relates to a Q switch element capable of supplying power to the whole. [Prior Art] FIG. 2 shows a side view of a conventional Q switch element. The Q switch element performs impedance matching between a Q switch medium 1 made of quartz glass, LiNbO 3 crystal, or the like, a piezoelectric body 2 for an input transducer attached to one surface of the Q switch medium 1, and a drive circuit. It comprises a matching circuit 3 and a package 8. The power supply to the Q switch element is performed by conductively connecting the piezoelectric body 2 and the matching circuit 3 with the metal pieces 5. FIG. 3 is an enlarged side view of the power supply section of the Q switch element. Conventionally, a gold piece 5 having an area smaller than that of the electrode portion of the piezoelectric body 2 is conductively connected by surface contact with the electrode portion. For example, the contact area of the gold piece 5 is 3 × 12 mm 2, which is about 1/3 of the contact area of the electrode area of 5 × 21 mm 2 . Further, the edges of the gold pieces 5 were all in contact from the periphery of the electrode. FIG. 4 shows a plan view of the piezoelectric body of the input transducer. A piezoelectric body 2 for an input transducer is attached to one surface of a Q-switch medium 1, and a gold piece is brought into contact with an electrode on the piezoelectric body.
The hatched portions are the contact portions 6 of the gold pieces, and the edge portions 7 are all in contact from the periphery of the electrode. [Problems to be Solved by the Invention] Conventionally, the edge portion 7 of the contact portion 6 of the gold piece tends to concentrate the electric field from the inside, and has been a location where a strong electric field called a singular point is generated. As a result, the temperature becomes high and the joint between the piezoelectric body and the Q-switch medium 1 is melted, and there is a problem that electrical and optical characteristics are impaired. [Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and a conductive connection between an input transducer for driving a Q-switch element and a matching circuit is provided. An object of the present invention is to provide a Q-switch element which is made of a gold piece or a gold-plated metal material having an area larger than that of the electrode, which is in surface contact with the entire surface of the electrode on the piezoelectric body. [Operation] In the present invention, the gold piece acts so as to eliminate the singular point of the contact portion with the piezoelectric body, and can operate the Q switch element for maximum output. That is, the contact structure has no singular point on the piezoelectric body and the concentration of the electric field is very unlikely to occur, so that the effect of the heat generated by the electric field, which increases as the output increases, is suppressed as much as possible. Embodiment FIG. 1 shows an embodiment of the present invention, and shows a plan view of a piezoelectric body of an input transducer. A piezoelectric body 2 for an input transducer is attached to one surface of a Q-switch medium 1, and a gold piece 5 is in surface contact with the whole surface of the electrode on the piezoelectric body 2. The hatched portion is the contact portion 4. The area of the gold piece 5 is at least larger than the area of the piezoelectric body or the electrode portion of the piezoelectric body, and the shape of the gold piece 5 must be always outside the edge of the piezoelectric body. The area of the electrode is 5.5 × 21 mm 2 , whereas the area of the gold piece 5 is 9 × 22 mm 2, which is a structure that completely covers the electrode. Further, a gold-plated metal material can be used in place of the gold piece 5, but a gold piece is preferable in terms of reliability. [Effects of the Invention] The present invention has an excellent effect that it can be used for a long time in a high-output laser device without deteriorating the electrical and optical characteristics of the Q-switch element.

【図面の簡単な説明】 第1図は本発明の1実施例を示し、入力トランスデュー
サーの圧電体の平面図であり、第2図〜第4図は従来例
の図を示し、第2図は従来のQスイッチ素子の側面図で
あり、第3図はQスイッチ素子の電力供給部の拡大側面
図であり、第4図は入力トランスデューサーの圧電体の
平面図である。 1……Qスイッチ媒体 2……圧電体 5……金片 4……接触部
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows one embodiment of the present invention and is a plan view of a piezoelectric body of an input transducer. FIGS. 2 to 4 show views of a conventional example, and FIG. FIG. 3 is a side view of a conventional Q switch element, FIG. 3 is an enlarged side view of a power supply section of the Q switch element, and FIG. 4 is a plan view of a piezoelectric body of the input transducer. 1 Q switch medium 2 Piezoelectric body 5 Gold piece 4 Contact part

Claims (1)

(57)【特許請求の範囲】 1.Qスイッチ素子を駆動する入力トランスデューサー
と整合回路との導電接続を、入力トランスデューサーの
圧電体上の電極全体を覆って面接触する、前記電極より
大きい面積の金片又は金メッキを施した金属材料によっ
て行うことを特徴とするQスイッチ素子。
(57) [Claims] A gold piece or a gold-plated metal material having an area larger than the electrode, which is in surface contact with the conductive connection between the input transducer driving the Q-switch element and the matching circuit, covering the entire electrode on the piezoelectric body of the input transducer. A Q-switch element.
JP62129878A 1987-05-28 1987-05-28 Q switch element Expired - Fee Related JP2712177B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62129878A JP2712177B2 (en) 1987-05-28 1987-05-28 Q switch element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62129878A JP2712177B2 (en) 1987-05-28 1987-05-28 Q switch element

Publications (2)

Publication Number Publication Date
JPS63296383A JPS63296383A (en) 1988-12-02
JP2712177B2 true JP2712177B2 (en) 1998-02-10

Family

ID=15020553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62129878A Expired - Fee Related JP2712177B2 (en) 1987-05-28 1987-05-28 Q switch element

Country Status (1)

Country Link
JP (1) JP2712177B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452576C (en) * 2005-11-28 2009-01-14 深圳市大族激光科技股份有限公司 Air-cooled electro-optic Q switch

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146250U (en) * 1978-03-31 1979-10-11
JPS5670523A (en) * 1979-11-15 1981-06-12 Mitsubishi Electric Corp Light circuit element
JPS5919922A (en) * 1982-07-27 1984-02-01 Hoya Corp Acoustooptic modulating element

Also Published As

Publication number Publication date
JPS63296383A (en) 1988-12-02

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