JP2718964B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2718964B2 JP2718964B2 JP63308036A JP30803688A JP2718964B2 JP 2718964 B2 JP2718964 B2 JP 2718964B2 JP 63308036 A JP63308036 A JP 63308036A JP 30803688 A JP30803688 A JP 30803688A JP 2718964 B2 JP2718964 B2 JP 2718964B2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- holes
- wafer
- semiconductor manufacturing
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 235000012431 wafers Nutrition 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、エピタキシャル成長装置、CVD装置等の半
導体製造装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus such as an epitaxial growth apparatus and a CVD apparatus.
従来の技術 近年、半導体装置の徴細化および高集積化が進み、こ
れに伴い、工程バラツキに対する要求もきびしくなって
きている。2. Description of the Related Art In recent years, semiconductor devices have become finer and more highly integrated, and accordingly, demands for process variations have become severe.
以下、エピタキシャル成長装置を例にとって従来の半
導体製造装置について説明する。Hereinafter, a conventional semiconductor manufacturing apparatus will be described using an epitaxial growth apparatus as an example.
第３図は従来のエピタキシャル成長装置を示すもので
ある。ベルジャー１内は一定の雰囲気に保たれており、
中央にノズル２が設けられている。ノズル２の上部は密
閉されており、上部付近の側壁には第４図に示すように
同一の大きさをもつ孔2aが多数形成されている。ノズル
２の下方には中央に貫通孔3aを有する円板状のサセプタ
ー３が回転自在に配置されており、このサセプター３上
のノズル２から等距離の位置に複数のウエハー４が円環
状に載置されている。FIG. 3 shows a conventional epitaxial growth apparatus. The inside of the bell jar 1 is kept constant,
A nozzle 2 is provided at the center. The upper part of the nozzle 2 is sealed, and a number of holes 2a having the same size are formed on the side wall near the upper part as shown in FIG. A disk-shaped susceptor 3 having a through hole 3a at the center is rotatably disposed below the nozzle 2, and a plurality of wafers 4 are annularly mounted on the susceptor 3 at positions equidistant from the nozzle 2. Is placed.
上記構成において、駆動手段（図示せず）によりサセ
プター３を回転させながらノズル２の内部にドーピング
ガスを導入すると、孔2aを通じてドーピングガス５が放
出され、ドーピングガス５によってウエハー４上に単結
晶層が成長する。In the above configuration, when the doping gas is introduced into the nozzle 2 while rotating the susceptor 3 by the driving means (not shown), the doping gas 5 is released through the hole 2a, and the single crystal layer is formed on the wafer 4 by the doping gas 5. Grows.
発明が解決しようとする課題 ところが、従来の構成においては、ノズル２の孔2aの
孔径がすべて同一であるため、第５図に示すようにウエ
ハー４の表面に成長する被膜６の厚さが不均一になる。
一般には第５図の左端すなわちノズル２に近い側の被膜
がやや厚くなり、中央付近が最も厚くなり、右端すなわ
ちノズル２から遠い側の被膜が最も薄くなる。このよう
にウエハー４上の被膜の厚さが不均一になると、製品の
信頼性に大きな影響を及ぼす。このことは、半導体装置
の微細化、高集積化がすすむにつれて一層大きな問題と
なってきている。However, in the conventional configuration, since the diameters of the holes 2a of the nozzle 2 are all the same, the thickness of the film 6 growing on the surface of the wafer 4 is not as shown in FIG. Become uniform.
Generally, the coating on the left end of FIG. 5, that is, the side near the nozzle 2 is slightly thicker, the thickness near the center is the thickest, and the coating on the right end, that is, the side farther from the nozzle 2 is the thinnest. When the thickness of the coating on the wafer 4 becomes non-uniform, the reliability of the product is greatly affected. This has become a more serious problem as the miniaturization and higher integration of semiconductor devices have progressed.
本発明はこのような従来の問題を解決する半導体製造
装置を提供するものである。The present invention provides a semiconductor manufacturing apparatus that solves such a conventional problem.
課題を解決するための手段 本発明は、回転自在のサセプターの中心部に上端を密
閉したノズルが配置され、上記サセプターの同心円上の
位置に複数のウエハーが載置され、上記ノズルの上部付
近の側壁にガスを放出して上記ウエハーの表面に被膜を
被着形成する多数の孔を設け、前記孔を直径の異なる二
種類形成して分散配置し、直径の大きい孔が前記ノズル
の上方に比較的に多く配置され、直径の小さい孔が前記
ノズルの下方に比較的に多く配置されたものである。Means for Solving the Problems In the present invention, a nozzle whose upper end is hermetically sealed is arranged at the center of a rotatable susceptor, a plurality of wafers are placed at concentric positions of the susceptor, A large number of holes are formed on the surface of the wafer by releasing gas to form a coating on the surface of the wafer, and two types of holes having different diameters are formed and dispersed, and the larger diameter hole is located above the nozzle. The number of holes having a small diameter is relatively large below the nozzle.
作用 このようにすれば、ウエハー表面全域に均一にガスが
放射されるため、均一な厚さの被膜が形成できる。In this case, the gas is uniformly radiated over the entire surface of the wafer, so that a film having a uniform thickness can be formed.
実施例 以下、本発明の一実施例を第１図、第２図とともに説
明する。Embodiment An embodiment of the present invention will be described below with reference to FIGS.
第１図において、第３図と同一機能の部分には同一符
号を付けて説明を省略する。ノズル２の上部付近の側壁
には複数の孔2a,2bが設けられている。孔2bは、孔2aよ
り径が大きく、第２図に示すように孔群の下方と上方に
1:2の割合で分散して形成されている。実際にはこのよ
うな孔2a,2bがノズル２の周囲全体に形成されている。In FIG. 1, portions having the same functions as those in FIG. A plurality of holes 2a and 2b are provided in a side wall near the upper portion of the nozzle 2. The hole 2b is larger in diameter than the hole 2a, and is located below and above the hole group as shown in FIG.
They are formed dispersed at a ratio of 1: 2. Actually, such holes 2a and 2b are formed all around the nozzle 2.
このようにすれば、上方に形成した孔径の大きい２つ
の孔2b,2bから放出されたドーピングガスは大量にかつ
遠くまで飛び、ウエハー４のノズル２から遠い側の表面
にかかる。また下方に形成した孔径の大きい１つの孔2b
からは、上方の２つの孔2b,2bほどではないにしても適
度に大量のガスがウエハー４のノズル２側の表面にかか
る。そして中央の小径の孔2aから放出されたガスは従来
と同様にウエハー４の中央付近に多量にかかる。このよ
うにしてウエハー４の表面全域にほぼ均一な厚さの被膜
が形成される。In this way, the doping gas released from the two large holes 2b, 2b formed above has a large amount and travels far and far, and reaches the surface of the wafer 4 farther from the nozzle 2. One large hole 2b formed below
After that, a moderately large amount of gas is applied to the surface of the wafer 4 on the nozzle 2 side, if not as much as the two upper holes 2b. Then, a large amount of gas released from the central small-diameter hole 2a is applied to the vicinity of the center of the wafer 4 as in the conventional case. In this way, a coating having a substantially uniform thickness is formed on the entire surface of the wafer 4.
なお、本発明はCVD装置に用いても同様の効果が得ら
れる。Note that the same effect can be obtained even when the present invention is used in a CVD apparatus.
発明の効果 本発明によれば、ノズルに異なる孔径の孔を設けるだ
けで、ウエハー上に均一な厚さの被膜を形成することが
でき、微細化、高集積化のすすむ半導体装置の信頼性を
十分に高めることができる。According to the present invention, a film having a uniform thickness can be formed on a wafer only by providing holes having different hole diameters in a nozzle, and the reliability of a miniaturized and highly integrated semiconductor device is improved. Can be raised enough.
第１図は本発明の一実施例における半導体製造装置の側
面図、第２図はその要部の側面図、第３図は従来例の側
面図、第４図はその要部の側面図、第５図は従来例で得
られるウエハー上の被膜分布を示す側面図である。 １……ベルジャー、２……ノズル、2a……小径の孔、2b
……大径の孔、３……サセプター、４……ウエハー、５
……ドーピングガス、６……被膜。FIG. 1 is a side view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a side view of a main part thereof, FIG. 3 is a side view of a conventional example, FIG. FIG. 5 is a side view showing a film distribution on a wafer obtained in a conventional example. 1 ... bell jar, 2 ... nozzle, 2a ... small hole, 2b
... large-diameter holes, 3 ... susceptors, 4 ... wafers, 5
... doping gas, 6 ... film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 新保 秀行 大阪府門真市大字門真1006番地 松下電 子工業株式会社内 (72)発明者 町田 良一 大阪府門真市大字門真1006番地 松下電 子工業株式会社内 (56)参考文献 実開 昭61−16366（ＪＰ，Ｕ) ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Hideyuki Shinbo 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Denshi Kogyo Co., Ltd. (56) References Japanese Utility Model Showa 61-16366 (JP, U)
Claims (1)
閉したノズルが配置され、上記サセプターの同心円上の
位置に複数のウエハーが載置され、上記ノズルの上部付
近の側壁にガスを放出して上記ウエハーの表面に被膜を
被着形成する多数の孔を設け、前記孔を直径の異なる二
種類形成して分散配置し、直径の大きい孔が前記ノズル
の上方に比較的に多く配置され、直径の小さい孔が前記
ノズルの下方に比較的に多く配置されたことを特徴とす
る半導体製造装置。A nozzle whose upper end is hermetically sealed is disposed at the center of a rotatable susceptor, a plurality of wafers are placed at concentric positions of the susceptor, and gas is discharged to a side wall near an upper portion of the nozzle. A large number of holes for forming a coating on the surface of the wafer are provided, the holes are formed in two types having different diameters, and the holes are dispersed and arranged. A semiconductor manufacturing apparatus wherein a relatively small number of holes are arranged below the nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63308036A JP2718964B2 (en) | 1988-12-06 | 1988-12-06 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63308036A JP2718964B2 (en) | 1988-12-06 | 1988-12-06 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02154419A JPH02154419A (en) | 1990-06-13 |
| JP2718964B2 true JP2718964B2 (en) | 1998-02-25 |
Family
ID=17976116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63308036A Expired - Fee Related JP2718964B2 (en) | 1988-12-06 | 1988-12-06 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2718964B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6116366U (en) * | 1984-06-30 | 1986-01-30 | 東芝機械株式会社 | Vapor phase growth nozzle |
-
1988
- 1988-12-06 JP JP63308036A patent/JP2718964B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02154419A (en) | 1990-06-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |