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JP2723955B2 - Multilayer reflector for soft X-ray and vacuum ultraviolet - Google Patents
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JP2723955B2 - Multilayer reflector for soft X-ray and vacuum ultraviolet - Google Patents

Multilayer reflector for soft X-ray and vacuum ultraviolet

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Publication number
JP2723955B2
JP2723955B2 JP1062234A JP6223489A JP2723955B2 JP 2723955 B2 JP2723955 B2 JP 2723955B2 JP 1062234 A JP1062234 A JP 1062234A JP 6223489 A JP6223489 A JP 6223489A JP 2723955 B2 JP2723955 B2 JP 2723955B2
Authority
JP
Japan
Prior art keywords
layer
soft
vacuum ultraviolet
multilayer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1062234A
Other languages
Japanese (ja)
Other versions
JPH02242201A (en
Inventor
正人 新部
雅美 林田
隆 飯塚
恵明 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP1062234A priority Critical patent/JP2723955B2/en
Publication of JPH02242201A publication Critical patent/JPH02242201A/en
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光学装置、特に軟X線から真空紫外線と称さ
れる波長2000Å以下の光を対象とし、入射角が鏡面に対
し垂直に近い正入射にも好適に使用できる軟X線・真空
紫外線用多層膜反射鏡に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is directed to optical devices, in particular, soft X-rays to light having a wavelength of 2000 ° or less, which is called vacuum ultraviolet light, and whose incident angle is close to perpendicular to a mirror surface. The present invention relates to a multilayer reflector for soft X-rays and vacuum ultraviolet rays which can be suitably used for incidence.

〔従来の技術〕[Conventional technology]

従来、真空紫外と称される領域より短波長側の光に対
しては、すべての材料物質で屈折率がほぼ1に近くな
り、また吸収係数が無視できない程度に大きくなるた
め、面に垂直もしくはそれに近い角度の入射角で高い反
射率を有するような反射鏡は得られず、反射率は1%以
下にとどまっていた。
Conventionally, with respect to light on the shorter wavelength side than the region called vacuum ultraviolet, the refractive index of all the materials is close to 1 and the absorption coefficient is so large that it cannot be ignored. A reflector having a high reflectivity at an incident angle close to that angle could not be obtained, and the reflectivity was less than 1%.

しかし、近年、薄膜材料の膜厚をオングストロームオ
ーダーで制御し多数積層する技術がすすみ、この技術を
使って多数の層界面からの反射光を強め合うように干渉
するよう膜厚を構成した軟X線・真空紫外線用多層膜反
射鏡が提唱され(E.Spiller,Appl.Phys.Lett,vol 20,36
5(1972))、その研究開発が盛んに行われるようにな
ってきた。
However, in recent years, a technique of controlling the thickness of a thin film material on the order of angstroms and stacking a large number of layers has been developed. Multi-layer reflector for X-ray and vacuum ultraviolet has been proposed (E. Spiller, Appl. Phys. Lett, vol 20, 36
5 (1972)), and its research and development has been actively pursued.

上記多層膜反射鏡においては、A,B2種類の材料を交互
に数十〜数百層積層した構造をとるが、高い反射率を得
るためには隣接するA,B2層間の屈折率の差が大きくなる
ような異種材料の組合わせを選択する必要がある。これ
まで、その組合せとしてはタングステンW、ニッケルN
i、白金Ptなどの金属と炭素C、あるいはモリブデンMo
とシリコンSiのような重元素と軽元素の組合わせの交互
層が知られている。また各層界面からの反射光の位相条
件を整えるため、各層の膜厚は数オングストロームのオ
ーダーで制御し、作製する必要がある。
The multilayer reflector has a structure in which tens to hundreds of layers of A and B2 materials are alternately laminated, but in order to obtain a high reflectance, the difference in the refractive index between adjacent A and B2 layers is required. It is necessary to select a combination of dissimilar materials that increases. Until now, the combination was tungsten W, nickel N
i, metal such as platinum Pt and carbon C, or molybdenum Mo
Alternating layers of combinations of heavy and light elements such as silicon and silicon Si are known. In addition, in order to adjust the phase condition of the light reflected from the interface between the layers, it is necessary to control the thickness of each layer on the order of several angstroms and manufacture the layers.

〔発明が解決しようとしている課題〕[Problems to be solved by the invention]

上記多層膜反射鏡は主に蒸着、スパッタ法など真空成
膜法により形成されるが、理想的に膜厚を制御して作製
した多層膜においても反射率を低下させる原因が存在し
た。
The above-mentioned multilayer film reflecting mirror is mainly formed by a vacuum film forming method such as vapor deposition or sputtering. However, there is a cause for lowering the reflectance even in a multilayer film which is ideally manufactured by controlling the film thickness.

そのひとつは成膜時に薄膜表面に凹凸が生じ、層界面
が平滑とならず荒れてしまうことである。特に100Å以
下の膜厚においては、薄膜が島状構造を形成するため、
この凹凸は必然的に現われてしまう。その結果、例えば
層界面にA,B1層対の周期厚みに対して20%の界面荒れの
ある多層膜反射鏡では、反射率が理論設計値に比べて80
%も低下してしまった。
One of them is that irregularities occur on the surface of the thin film at the time of film formation, and the layer interface is not smooth but rough. Especially at a film thickness of 100 mm or less, since the thin film forms an island-like structure,
This irregularity appears inevitably. As a result, for example, in a multilayer reflector having an interface roughness of 20% with respect to the periodic thickness of the A and B1 layer pairs at the layer interface, the reflectivity is 80 times higher than the theoretical design value.
% Has also dropped.

また、他の反射率低下の原因として、成膜時にA,B2材
料の間で相互に原子レベルでの拡散が生じ、隣接する材
料間の屈折率の差が小さくなってしまうということがあ
った。後者については、A−B層間に拡散防止の緩衝を
形成する提案がいくつかなされているが(特開昭60−74
00,61−128199)前者を解決するような具体的発明は成
膜の方法、A,B材料の選択方以外にはこれまで提案され
ていなかった。
Another cause of the decrease in reflectivity was that the A and B2 materials mutually diffused at the atomic level during film formation, and the difference in refractive index between adjacent materials was reduced. . Regarding the latter, some proposals have been made to form a buffer for preventing diffusion between the AB layers (JP-A-60-74).
(00,61-128199) A specific invention which solves the former has not been proposed until now except for the method of film formation and the method of selecting the A and B materials.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は上記問題点に鑑みなされたものであり、その
目的は前記従来例の欠点を緩和、除去し、高反射率を有
するとともに、高照射耐久性、安定性を有する多層膜反
射鏡を提供することにある。
The present invention has been made in view of the above problems, and has as its object to provide a multilayer mirror having high reflectivity, high irradiation durability, and stability while alleviating and eliminating the drawbacks of the conventional example. Is to do.

本発明によれば、A,B2種類の主材料の交互層よりなる
多層薄膜構造を有する軟X線・真空紫外線用多層膜反射
鏡において、副材料薄膜を前記A−B層間および/又は
B−A層間に少なくとも1層以上積層した周期構造を形
成することにより、多層膜界面の荒れを減少させること
ができ、前記本発明の目的を達成したものである。
According to the present invention, in a multilayer reflector for soft X-rays and vacuum ultraviolet rays having a multilayer thin film structure composed of alternating layers of A and B two types of main materials, the sub-material thin film is formed between the AB layer and / or the B-layer. By forming a periodic structure in which at least one or more layers are stacked between the A layers, it is possible to reduce the roughness of the multilayer film interface, thereby achieving the object of the present invention.

第1図は本発明の軟X線・真空紫外線用多層膜反射鏡
の一実施態様の模式図である。
FIG. 1 is a schematic view of an embodiment of the multilayer reflector for soft X-rays and vacuum ultraviolet rays according to the present invention.

第1図に示す本発明の多層膜反射鏡は、使用波長に比
べて十分滑らかに研磨された平面もしくは曲面の基板1
上に低屈折率層である第1の層A1,A2,A3…、および高屈
折率層である第2の層B1,B2,B3…、さらに薄膜の積層方
向に第1の層Aと第2の層Bとの間に第3の層C1,C2,C3
…が形成され、A−C−B−A−C−B−…の周期構造
が構成されている。低屈折率層は一般にタングステン、
モリブデン等の高融点金属材料あるいはそれらを主成分
としてなる化合物で形成される。一方高屈折率層は一般
に炭素、シリコン、ホウ素、ベリリウム等の軽元素ある
いはそれらを主成分としてなる化合物で形成される。
The multilayer mirror of the present invention shown in FIG. 1 has a flat or curved substrate 1 polished sufficiently smoothly compared to the wavelength used.
The first layers A1, A2, A3, which are low refractive index layers, and the second layers B1, B2, B3, which are high refractive index layers, and the first layer A and the A third layer C1, C2, C3 between the second layer B
Are formed to form a periodic structure of ACCBACCB-. The low refractive index layer is generally tungsten,
It is formed of a high melting point metal material such as molybdenum or a compound containing them as a main component. On the other hand, the high refractive index layer is generally formed of a light element such as carbon, silicon, boron, beryllium, or a compound containing these as main components.

本発明において第3の層を形成する副材料は積層によ
って、層界面の荒れを小さくする作用を持つ必要があ
る。一般に真空成膜により結晶層が形成される材料およ
び方法は、膜厚100Å以下で島状構造となりやすいた
め、界面の凹凸を形成し、また増大させる恐れがある。
これに対して真空成膜時に非晶質層が形成される材料お
よび方法は、島状構造を形成しにくく、積層により界面
の凹凸を減少させる働きを持つ。例えば、非晶質になり
やすい真空蒸着炭素を含む多層膜系では、下層の欠陥や
荒れが積層により減少することが報告されている(Y.Le
petre et al.Proceedings of SPIE,vol 563 p258−26
3)。このため副材料としては真空成膜により非晶質層
を形成する材料が望ましい。
In the present invention, the auxiliary material forming the third layer needs to have an effect of reducing the roughness of the layer interface by lamination. In general, a material and a method of forming a crystal layer by vacuum film formation tend to have an island-like structure with a film thickness of 100 mm or less, so that there is a possibility that unevenness at the interface may be formed or increased.
On the other hand, a material and a method in which an amorphous layer is formed at the time of vacuum film formation hardly form an island structure and have a function of reducing unevenness of an interface by lamination. For example, it has been reported that in a multilayer film system containing vacuum-deposited carbon, which tends to become amorphous, the defects and roughness of the lower layer are reduced by lamination (Y. Le.
petre et al. Proceedings of SPIE, vol 563 p258-26
3). For this reason, a material that forms an amorphous layer by vacuum film formation is desirable as a sub-material.

また前記第3層を形成する副材料は軟X線の吸収係数
が小さいことが、高反射率を得るためには好ましく、一
般に軟X線に対する吸収係数の小さい軽元素を用いるこ
とが望ましい。
It is preferable that the auxiliary material forming the third layer has a small soft X-ray absorption coefficient in order to obtain a high reflectance, and it is generally preferable to use a light element having a small soft X-ray absorption coefficient.

以上の理由から具体的な副材料の例として、炭素C、
ホウ素B、ベリリウムBe、炭化ケイ素SiC窒化ケイ素Si3
N4、酸化ケイ素SiO2、窒化ホウ素BN、炭化ホウ素B4C、
窒化アルミニウムAlN等の原子番号13以下の軽元素の導
体もしくはそれらの化合物があげられる。
For the above reasons, carbon C,
Boron B, beryllium Be, silicon carbide SiC silicon nitride Si 3
N 4 , silicon oxide SiO 2 , boron nitride BN, boron carbide B 4 C,
Examples include a conductor of a light element having an atomic number of 13 or less such as aluminum nitride AlN or a compound thereof.

また本発明において、第3の層を形成する副材料の膜
厚は主材料AおよびBの吸収係数に悪影響を与えない程
度に設定することが必要であり、おおむね、層周期の1/
5以下の厚みが望ましい。
In the present invention, it is necessary to set the thickness of the sub-material forming the third layer to such an extent that the absorption coefficient of the main materials A and B is not adversely affected.
A thickness of 5 or less is desirable.

本発明の軟X線・真空紫外線用多層膜反射鏡の作成に
は、好ましくは超高真空中における真空蒸着が用いられ
るが、高融点材料を使用する場合はスパッタリング法も
有効な手段であり、その他抵抗加熱、CVD、反応性スパ
ッタリング等の様々の薄膜を形成する方法を用いること
ができる。
For the production of the multilayer reflector for soft X-rays and vacuum ultraviolet rays of the present invention, vacuum deposition in an ultra-high vacuum is preferably used, but when a high melting point material is used, sputtering is also an effective means, Other methods for forming various thin films such as resistance heating, CVD, and reactive sputtering can be used.

本発明における前記構成の多層膜では第3の層が次の
作用をする。
In the multilayer film having the above-described structure according to the present invention, the third layer has the following function.

第1に前記低屈折率層をなす高融点材料は真空成膜す
ると島状構造を形成して結晶成長し、このため層表面に
凹凸を生じ、層表面が荒れる。さらに各層の積層により
下層の荒れが上層に反映して上層ほど界面荒れが増大す
ることが知られている。これに対して荒れの生ずる第1
の層Aと第2の層Bの間に非晶質材料よりなる第3の層
を挿入するように積層することにより、第1の層Aの表
面の荒れを緩和し、荒れが下層から上層に伝播するのを
防ぐ緩衝層として作用させることができる。その結果、
多層膜の界面荒れの量を全体に減少させ、高反射率を有
する多層膜反射鏡を得ることができる。
First, the high-melting-point material forming the low-refractive-index layer forms an island-like structure and crystal grows when vacuum-deposited, thereby causing irregularities on the layer surface and roughening the layer surface. Further, it is known that the lamination of each layer reflects the roughness of the lower layer to the upper layer, and the interface layer becomes rougher toward the upper layer. On the other hand, rough
By laminating so as to insert a third layer made of an amorphous material between the first layer A and the second layer B, the roughness of the surface of the first layer A is reduced, and the roughness is reduced from the lower layer to the upper layer. To act as a buffer layer that prevents propagation to the surface. as a result,
The amount of interface roughness of the multilayer film can be reduced as a whole, and a multilayer mirror having a high reflectance can be obtained.

第2に前記軽元素の非晶質材料は均一かつ緻密に積層
され、前記低屈折材料Aと高屈折材料Bの間の相互拡散
を防止するように作用する。特に材料A,Bが化合物を形
成しやすい組合わせである場合(例えば高融点金属とシ
リコンではわずかの加熱でシリサイドが形成される)、
前記第3の層をA層とB層の間に薄く形成することによ
りAB材料の相互拡散、化合物形成を防ぐことができる。
また相互拡散は層の粒状境界の割れ目等を介して起こる
ことが多い。このため界面の荒れを防ぐために入れた緩
衝層が相互拡散防止層としても作用する。
Second, the light-element amorphous material is uniformly and densely stacked, and acts to prevent mutual diffusion between the low-refractive material A and the high-refractive material B. In particular, when materials A and B are a combination that easily forms a compound (for example, silicide is formed by a small amount of heating with high melting point metal and silicon).
By forming the third layer thin between the A layer and the B layer, the interdiffusion of AB material and the formation of a compound can be prevented.
Interdiffusion often occurs through cracks at the granular boundaries of the layers. For this reason, the buffer layer inserted to prevent the roughness of the interface also functions as a mutual diffusion preventing layer.

なお、前記実施態様では副材料としての第3層を低屈
折材料Aと高屈折材料Bの間に1層形成してA−C−B
の3層周期構造を形成したが、必要に応じてB−C−A
の順に積層した3層周期構造や、A−C−B−Cあるい
はA−C−B−D(DはCとは異なる副材料)のような
4層周期構造(第2図)を形成することにより前記作用
を更に良好なものにすることもできる。
In the above embodiment, a third layer as a sub-material is formed between the low-refractive material A and the high-refractive material B so that ACB
Was formed, but if necessary, BCA
, Or a four-layer periodic structure (FIG. 2) such as ACBC or ACBD (D is a sub-material different from C). Thereby, the above-mentioned operation can be further improved.

〔実施例〕〔Example〕

以下に本発明の実施例を挙げて本発明を更に詳細に説
明する。
Hereinafter, the present invention will be described in more detail with reference to examples of the present invention.

実施例1 基板に面粗さがrms値で3Å以下になるように研磨さ
れた溶融石英を用い、第1の層をなす主材料としてルテ
ニウムRu、第2の層をなす主材料としてシリコンSiを用
い、また第3の層をなす副材料として炭素Cを選択し、
膜厚をそれぞれ23Å、37Å、7Åとして、下層からRu−
C−Siの順に20周期形成し、最後にRu23ÅとC30Åを積
層して第1図にその構成を示すような本発明の軟X線・
真空紫外線用多層膜反射鏡を作製した。
Example 1 A substrate made of fused quartz polished so that the surface roughness becomes 3 ° or less in rms value, ruthenium Ru as a main material forming a first layer, and silicon Si as a main material forming a second layer Used, and carbon C is selected as a sub-material forming the third layer,
The film thicknesses are 23 °, 37 ° and 7 °, respectively, and Ru-
Twenty cycles are formed in the order of C-Si, and finally Ru23Å and C30Å are laminated, and the soft X-ray of the present invention as shown in FIG.
A multilayer reflector for vacuum ultraviolet light was manufactured.

作製法は1×10-6Pa以下の超高真空中において電子ビ
ーム加熱法により、Ru、C、Siを順に蒸発させ、水晶振
動子膜厚計で各層の膜厚が所定の値となるようシャッタ
ーを開閉して制御した。
The manufacturing method is to evaporate Ru, C, and Si in order by an electron beam heating method in an ultra-high vacuum of 1 × 10 −6 Pa or less so that the thickness of each layer becomes a predetermined value by a quartz crystal film thickness meter. The shutter was opened and closed and controlled.

この反射鏡をX線小角回折法(波長1.54Å)により評
価したところ、層界面の荒れの大きさが5.5Årms以下と
なっていることがわかった。またこの反射鏡の鏡面に波
長130.0Åの光を法線より10゜で入射したところ、57.0
%の反射率を得た。
When this reflecting mirror was evaluated by the small-angle X-ray diffraction method (wavelength: 1.54 °), it was found that the roughness of the layer interface was 5.5 ° rms or less. When light of wavelength 130.0Å was incident on the mirror surface of this reflector at 10 ゜ from the normal, 57.0 法
% Reflectance was obtained.

比較のため同様の作製法により層周期を前記多層膜に
等しくするためRu27Å、Si40Å膜厚で炭素Cを間に積層
しないRu/Si20周期多層膜を作製し、評価すると、層界
面の荒れの大きさが12.5Årmsで、また波長130.0Åに対
する反射率が20.0%であった。このことからRu層とSi層
の間に薄くC層を積層することにより多層膜界面の荒れ
が減少し、その結果反射鏡の反射率が増大することがわ
かった。
For comparison, a Ru / Si 20-period multilayer film having a thickness of Ru27Å and Si40Å with no carbon C interposed therebetween was prepared by the same fabrication method to make the layer period equal to that of the multilayer film, and evaluated. Was 12.5Årms, and the reflectance for a wavelength of 130.0Å was 20.0%. From this, it was found that by laminating the C layer thinly between the Ru layer and the Si layer, the roughness of the interface of the multilayer film was reduced, and as a result, the reflectance of the reflecting mirror was increased.

実施例2 基板に面粗さがrms値で4Å以下になるように研磨し
たシリコン単結晶を用い、第1の層をなす主材料として
モリブデンMo、第2の層をなす主材料としてシリコンSi
を用い、また第3および第4の層をなす副材料として酸
化ケイ素SiO2を選択し、膜厚をそれぞれMo22Å、Si33
Å、SiO25Åとして、下層からMo−SiO2−Si−SiO2の順
に4層単位で20周期形成し、最後にMo22Åを積層して第
2図にその構成を示すような本発明の軟X線・真空紫外
線用多層膜反射鏡を作製した。
Example 2 A silicon single crystal polished so that the surface roughness was 4 ° or less in rms value was used for a substrate, and molybdenum (Mo) was used as a main material of the first layer, and silicon (Si) was used as a main material of the second layer.
And silicon oxide SiO 2 was selected as a sub-material for forming the third and fourth layers, and the film thickness was set to Mo22Å and Si33, respectively.
SiO, SiO 2 5Å is formed from the lower layer in the order of Mo—SiO 2 —Si—SiO 2 in four-layer units for 20 periods, and finally Mo22Å is laminated, and the softness of the present invention as shown in FIG. A multilayer reflector for X-ray and vacuum ultraviolet light was manufactured.

作製法は、RFマグネトロンスパッタ法により、ターゲ
ットとしてMoとSiの5インチφのものを用い、まずAr圧
3×10-1PaでMoをスパッタし所定の厚さに積層した。次
に真空装置内にO2を導入し、Ar+O2ガス圧5×10-1Paで
Siターゲットをスパッタし、所定の厚みのSiO2薄膜を形
成した後、O2ガスの導入を止めて、Ar圧3×10-1PaでSi
薄膜を所定の厚み積層した。その後再びO2ガスを導入し
たスパッタを行いMo−SiO2−Si−SiO2の4層よりなる1
周期構造を形成した。上記方法をくりかえして20周期を
成膜し、最後にMoを22Å積層した。この反射鏡をX線小
角回折法により評価したところ、層界面の荒れが6.5År
ms以下となっていることがわかった。また反射鏡の鏡面
に波長130.0ÅのX線を法線より10゜で入射したとこ
ろ、46.5%の反射率を得た。
The fabrication method was such that Mo and Si having a diameter of 5 inches were used as targets by RF magnetron sputtering, and Mo was first sputtered at an Ar pressure of 3 × 10 −1 Pa and laminated to a predetermined thickness. Next, O 2 is introduced into the vacuum device, and Ar + O 2 gas pressure is 5 × 10 -1 Pa.
After sputtering a Si target to form a SiO 2 thin film of a predetermined thickness, the introduction of O 2 gas was stopped, and the Si pressure was reduced to 3 × 10 -1 Pa at Ar pressure.
The thin films were laminated to a predetermined thickness. After that, sputtering is performed again by introducing O 2 gas, and the four layers of Mo—SiO 2 —Si—SiO 2 are formed.
A periodic structure was formed. By repeating the above method, 20 cycles were formed, and finally Mo was laminated by 22 mm. When this reflecting mirror was evaluated by the small-angle X-ray diffraction method, the roughness of the layer interface was 6.5 界面 r
It turned out to be less than ms. When X-rays having a wavelength of 130.0 ° were incident on the mirror surface of the reflecting mirror at 10 ° from the normal line, a reflectance of 46.5% was obtained.

同反射鏡を真空下で650℃、2時間の加熱を行い、そ
の後X線小角回折により多層膜の構造変化を観察した。
その結果、熱処理の前後でほとんど周期構造に変化が見
られなかった。
The reflecting mirror was heated under vacuum at 650 ° C. for 2 hours, and then the structural change of the multilayer film was observed by small-angle X-ray diffraction.
As a result, almost no change was observed in the periodic structure before and after the heat treatment.

一方比較のためスパッタ法によるMo25Å、Si42Åの膜
厚で間にSiO2を積層しないMo/Si20周期多層膜を作製
し、上記と同様の熱処理を行った。その結果、加熱後の
試料では多層構造に対応するブラッグ回折ピークのうち
1次ピーク強度が約1/5に減少し、また2次以上の高次
ピークは観測されなくなってしまった。これは熱処理に
より多層膜層の相互拡散が起こり周期構造が乱されたた
めと考えられる。
On the other hand, for comparison, a Mo / Si 20-period multilayer film was prepared by sputtering without forming a SiO 2 layer between Mo 25 ° and Si 42 °, and subjected to the same heat treatment as described above. As a result, in the sample after heating, the intensity of the primary peak among the Bragg diffraction peaks corresponding to the multilayer structure was reduced to about 1/5, and the higher-order peak of the second or higher order was not observed. This is presumably because the heat treatment caused the inter-diffusion of the multilayer film layers to disturb the periodic structure.

以上の結果から、SiO2を中間層として積層したMo/Si
多層膜では、加熱によるMoとSiとの相互拡散が起こりに
くくなり熱的安定性が増大することがわかった。
From the above results, Mo / Si laminated with SiO 2 as the intermediate layer
In the multilayer film, it was found that interdiffusion between Mo and Si due to heating was unlikely to occur, and the thermal stability increased.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明の多層膜反射鏡において
は副材料薄膜を中間層として積層した周期構造を形成す
ることにより薄膜の成長過程で起こる島状構造による表
面、界面の荒れの増大を防止し、高反射率の軟X線・真
空紫外線用多層膜反射鏡を提供できるようになった。
As described above, in the multilayer mirror of the present invention, by forming a periodic structure in which sub-material thin films are stacked as an intermediate layer, the surface and interface roughness due to the island-like structure occurring in the growth process of the thin film is prevented from increasing. Thus, a multilayer mirror for soft X-rays and vacuum ultraviolet rays having a high reflectance can be provided.

また中間層により、化合物を形成しやすい材料の組合
わせの多層膜においても相互拡散が防止され、多層構造
の熱的安定化がはかられた。特に軟X線・真空紫外線反
射鏡は放射光等の輝度の高い光にさらされる環境での用
途が多いため、本発明は反射鏡の経時劣化に対して有効
なものである。
In addition, the intermediate layer prevented interdiffusion even in a multi-layer film made of a combination of materials that easily form a compound, thereby achieving thermal stabilization of the multi-layer structure. In particular, since the soft X-ray / vacuum ultraviolet reflecting mirror has many applications in an environment where it is exposed to high-brightness light such as radiation light, the present invention is effective against the aging of the reflecting mirror.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明を実施した多層膜反射鏡の模式断面図、
第2図は本発明の別の実施例の多層膜反射鏡の模式断面
図である。 1:基板 A1,A2…An+1:主材料Aよりなる第1の層(低屈折率) B1,B2…Bn:主材料Bよりなる第2の層(高屈折率) C1,C2…Cn+1:副材料Cよりなる第3の層(中間層1) D1,D2…Dn:副材料Dよりなる第4の層(中間層2) dA,dB,dC,dD:層A,B,C,Dの薄膜の厚さ
FIG. 1 is a schematic sectional view of a multilayer reflector embodying the present invention,
FIG. 2 is a schematic sectional view of a multilayer mirror according to another embodiment of the present invention. 1: Substrate A1, A2 ... An + 1 : First layer made of main material A (low refractive index) B1, B2 ... Bn : Second layer made of main material B (high refractive index) C1, C2 ... C n + 1: the third layer (middle layer 1) D1, D2 ... D n consisting secondary material C: a fourth layer made of secondary material D (intermediate layer 2) d a, d B, d C, d D : Thickness of thin films of layers A, B, C, D

フロントページの続き (72)発明者 福田 恵明 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 昭60−7400(JP,A)Continuation of the front page (72) Inventor Yoshiaki Fukuda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP-A-60-7400 (JP, A)

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】互いに屈折率の異なるA,B、2種類の主材
料の交互層よりなる多層薄膜構造を有する軟X線・真空
紫外線用多層膜反射鏡において、積層界面の荒れを小さ
くする作用を持つ副材料薄膜が前記各A−B層間および
/又はB−A層間に少なくとも1層以上積層され、周期
構造を形成していることを特徴とする軟X線・真空紫外
線用多層膜反射鏡。
1. A soft X-ray / vacuum ultraviolet multilayer film reflecting mirror having a multilayer thin film structure composed of alternating layers of A, B and two kinds of main materials having different refractive indices from each other. A multilayer film reflecting mirror for soft X-rays and vacuum ultraviolet rays, characterized in that at least one sub-material thin film having the following structure is laminated between the AB layers and / or the BA layers to form a periodic structure. .
【請求項2】前記副材料薄膜の構成材料が軽元素の単体
もしくはそれらの化合物よりなる非晶質物質であること
を特徴とする請求項1に記載の軟X線・真空紫外線用多
層膜反射鏡。
2. The multi-layer reflection film for soft X-rays and vacuum ultraviolet rays according to claim 1, wherein the constituent material of the sub-material thin film is an amorphous substance composed of a simple element of a light element or a compound thereof. mirror.
【請求項3】前記副材料薄膜の構成物質が炭素Cまたは
酸化ケイ素SiO2であることを特徴とする請求項1に記載
の軟X線・真空紫外線用多層膜反射鏡。
3. The multi-layer reflecting mirror for soft X-rays and vacuum ultraviolet rays according to claim 1, wherein the constituent material of said sub-material thin film is carbon C or silicon oxide SiO 2 .
JP1062234A 1989-03-16 1989-03-16 Multilayer reflector for soft X-ray and vacuum ultraviolet Expired - Fee Related JP2723955B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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JP2723955B2 true JP2723955B2 (en) 1998-03-09

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Cited By (1)

* Cited by examiner, † Cited by third party
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JP2002277589A (en) * 2001-03-16 2002-09-25 Japan Atom Energy Res Inst Mo / Si multilayer film and method for improving heat resistance thereof
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
JP4566791B2 (en) * 2004-03-26 2010-10-20 キヤノン株式会社 Soft X-ray multilayer reflector
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725859B1 (en) * 2001-05-23 2007-06-08 학교법인 한양학원 RU / Mo / Si Reflective Multi-Layered Mirrors for Extreme Ultraviolet Exposure Processes

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