JP2736453B2 - Package for storing semiconductor elements - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device.

(Prior Art) Conventionally, a package for accommodating a semiconductor element, particularly a package for accommodating a glass-encapsulated semiconductor element sealed by welding glass, includes an insulating base and a lid, and accommodates the semiconductor element inside. And an external lead terminal for electrically connecting a semiconductor element housed in the container to an external electric circuit,
A glass member for sealing is applied in advance on the opposing main surfaces of the insulating base and the lid, and external lead terminals are fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wired. After the bond connection, the semiconductor element is hermetically sealed inside by fusing and integrating a sealing glass member attached to each of the insulating base and the lid.

(Problems to be Solved by the Invention) However, this conventional package for housing a glass-sealed semiconductor element usually has an external lead terminal of Kovar (29 Wt).
% Ni-16Wt% Co-55Wt% Fe alloy) and 42Alloy (42Wt% Ni alloy)
-58Wt% Fe alloy), and Kovar and 42Alloy have the following disadvantages due to their high magnetic permeability and low electric conductivity.

That is, Kovar and 42Alloy are made of only ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (Co), and have high magnetic permeability of 250 to 700 (CGS). Therefore, when a current flows through the external lead terminal made of Kovar or 42Alloy, a large self-inductance is generated in the external lead terminal in proportion to the magnetic permeability, which induces a back electromotive force to become noise, and the noise becomes a semiconductor. The conductivity of Kovar or 42Alloy is 3.0 to 3.5% (IAC
S) and low. Therefore, when a signal is propagated to an external lead terminal made of Kovar or 42Alloy, the signal propagation speed becomes extremely slow, and semiconductor devices that perform high-speed driving cannot be accommodated. The number of electrodes of a semiconductor element has increased significantly with the progress of higher density and higher integration of semiconductor elements housed inside the semiconductor device, and wires of external lead terminals for connecting each electrode of the semiconductor element to an external electric circuit. The width has also become extremely narrow. For this reason, the external lead terminal has become extremely large in electrical resistance in tandem with the low conductivity of Kovar and 42 Alloy described above, and when a signal is propagated to the external lead terminal, the external lead terminal becomes The signal is greatly attenuated due to the electric resistance, and the signal cannot be accurately input to the semiconductor element housed therein, thereby causing a malfunction in the semiconductor element.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to minimize the noise generated at the external lead terminals and the signal attenuation at the external lead terminals to minimize the semiconductor device housed therein. An object of the present invention is to provide a package for housing a semiconductor element capable of reliably inputting / outputting a signal and allowing a semiconductor element to operate normally and stably for a long period of time.

Another object of the present invention is to provide a semiconductor element housing package capable of housing a semiconductor element which operates at high speed.

(Means for Solving the Problems) The present invention comprises an insulating container having an insulating base and a lid and having a space for accommodating a semiconductor element therein, and an external electric device for accommodating the semiconductor element accommodated in the container. In a semiconductor device housing package comprising external lead terminals for connecting to a circuit, the insulating base and the lid are made of a spinel or steatite sintered body, and the external lead terminals are made of nickel.
1.5-32.5Wt%, Cobalt 16.5-17.5Wt%, Iron 50.0
It is characterized by being formed of a metal body in which a copper plate having a thickness of 60 to 80% with respect to the thickness of the plate body is joined to upper and lower surfaces of a plate body made of an alloy of 5 to 20% by weight.

(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base and 2 is a lid. The insulating container 3 is constituted by the insulating base 1 and the lid 2.

The insulating base 1 and the lid 2 are each provided with a concave portion for forming a space for accommodating a semiconductor element at the center thereof, and the semiconductor element 4 is formed of resin, glass, brazing agent on the bottom surface of the concave portion of the insulating base 1. It is attached and fixed via an adhesive such as.

The insulating base 1 and the lid 2 are made of a spinel or steatite sintered body. In a press mold having a shape corresponding to the insulating base 1 and the lid 2 as shown in FIG. (MgO), alumina (Al ₂ O ₃ )
Raw material powder such as magnesia (MgO) or silica (SiO ₂ ) in the case of a steatite sintered body, and molding by applying a constant pressure. It is manufactured by firing at a temperature of ~ 1700 ° C.

The spinel or steatite sintered body forming the insulating base 1 and the lid 2 has a coefficient of thermal expansion of 70 to 85.
× 10 ⁻⁷ / ° C., and there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the coefficient of thermal expansion of the sealing glass member described later.

Further, a glass member 6 for sealing is previously formed on the opposing main surfaces of the insulating base 1 and the lid 2.
The semiconductor element 4 in the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 to be integrated.

The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of, for example, lead borosilicate glass to which a filler is added. ) 70.0~90.0Wt%, boron oxide (B ₂ O ₃₎ 1
2.0~13.0Wt%, silica (SiO ₂₎ 0.5~3.0Wt% and alumina (Al ₂ O ₃₎ lead titanate as a filler 0.5~3.0Wt% (PbTiO _3), β- eucryptite (Li ₂ Al ₂ Si
₂ O ₈ ), cordierite (Mg ₂ Al ₄ Si ₅ O ₁₈ ), zircon (ZrS
iO ₄ ), tin oxide (SnO ₂ ), willemite (Zn ₂ SiO ₄ ), etc. are added at 15 to 30% by volume, and the mixed powder is mixed at 950 to
It is manufactured by heating and melting at a temperature of 1100 ° C. This lead borosilicate glass has a coefficient of thermal expansion of 60
9090 × 10 ⁻⁷ / ° C.

The sealing glass member 6 has a thermal expansion coefficient of 60 to 90 ×.
Since the thermal expansion coefficient is 10 ⁻⁷ / ° C. and approximates the thermal expansion coefficients of the insulating base 1 and the lid 2, the sealing glass member 6 attached to each of the insulating base 1 and the lid 2 is heated and melted. When the semiconductor element 4 in the insulating container 3 is air-tightly sealed by integrating them, the difference in thermal expansion coefficient between the insulating base 1 and the lid 2 and the sealing glass member 6 is caused. Almost no thermal stress is generated, and the insulating base 1 and the lid 2 can be firmly joined via the glass member 6 for sealing.

The sealing glass member 6 is made of a glass paste obtained by adding a suitable organic solvent and a solvent to a powder of lead borosilicate glass to which a filler has been added by employing a conventionally well-known thick film method. 1 and the cover 2 are attached to the opposing main surfaces.

Further, the sealing glass member 6 is not limited to a lead borosilicate glass to which a filler is added, and any glass having a coefficient of thermal expansion in a range of 60 to 90 × 10 ⁻⁷ / ° C. Can be used.

An external lead terminal 5 made of a conductive material is disposed between the insulating base 1 and the lid 2. The external lead terminal 5 is electrically connected to each electrode of the semiconductor element 4 via a wire 7. By connecting the external lead terminal 5 to an external electric circuit, the semiconductor element 4 is connected to the external electric circuit.

The external lead terminals 5 are formed by melting and integrating a sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating container 3 with the insulating base 1.
And the cover 2.

The external lead terminal 5 has nickel of 31.5 to 32.5 Wt%,
A metal body in which a copper plate having a thickness of 60 to 80% with respect to the thickness of the plate body is joined to upper and lower surfaces of a plate body made of an alloy of cobalt 16.5 to 17.5 Wt% and iron 50.0 to 52.0 Wt%, Its magnetic permeability is about 93 (CGS), conductivity is 62.3% (IACS), and thermal expansion coefficient is about 71 × 10 ^-7 / ° C.

The external lead terminal 5 is formed by pressing a copper (Cu) plate on the upper and lower surfaces of a nickel-cobalt-iron alloy (Ni-Co-Fe alloy) plate and then rolling it. You.

When the amount of nickel (Ni), cobalt (Co) and iron (Fe) and the thickness of the plate and the copper plate are out of the above ranges, the magnetic permeability of the external lead terminal 5 becomes a desired low value. In addition, the conductivity does not reach a high value, and the coefficient of thermal expansion does not match the coefficient of thermal expansion of the insulating base and the lid. Therefore, external lead terminal 5 is nickel 31.5 to 32.5
Wt%, cobalt 16.5-17.5Wt%, iron 50.0-52.0Wt%
It is limited to a metal body in which a copper plate having a thickness of 60 to 80% of the thickness of the plate is bonded to the upper and lower surfaces of the plate made of the alloy.

Since the magnetic permeability of the external lead terminal 5 is 93 (CGS) and the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance is not generated in the external lead terminal 5. As a result, noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor element 4 housed therein can always operate normally.

The external lead terminal 5 has a conductivity of 62.3% (IA
CS) or more, and since it is easy to conduct electricity, the signal propagation speed of the external lead terminal 5 can be made extremely high. Even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 Signals can be always sent and received between the power supply and the external electric circuit in a stable and reliable manner.

At the same time, since the electrical conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 is reduced, the electrical resistance of the external lead terminal 5 can be suppressed low. An electric signal supplied from an external electric circuit can be accurately input to the semiconductor element 4 housed therein with the attenuation being minimized.

Further, the external lead terminal 5 has a thermal expansion coefficient of about
The external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6 because it is 71 × 10 ⁻⁷ / ° C. and is close to the coefficient of thermal expansion of the sealing glass member 6. At this time, no thermal stress is generated between the external lead terminal 5 and the sealing glass member 6 due to the difference in the coefficient of thermal expansion between the external lead terminal 5 and the sealing glass member 6. It becomes possible to fix firmly.

Thus, according to the package for accommodating the semiconductor element, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating base 1 and each electrode of the semiconductor element 4 is connected to the bonding wire 7.
After that, the sealing glass member 6 in which the insulating substrate 1 and the lid 2 are previously adhered to the opposing main surfaces of the insulating substrate 1 and the lid 2 is removed. The semiconductor device as a final product is completed by joining by melting and integrating.

(Effect of the Invention) According to the package for housing a semiconductor element of the present invention, the insulating base and the lid constituting the insulating container for housing the semiconductor element are made of a spinel or steatite sintered body, and the external lead terminals are made of nickel. 31.5 to 32.5 Wt%, cobalt 1
A copper plate having a thickness of 60 to 80% with respect to the thickness of the plate is joined to the upper and lower surfaces of a plate made of an alloy of 6.5 to 17.5 Wt% and iron 50.0 to 52.0 Wt% to have a magnetic permeability of about 93 ( CGS), conductivity of 62.3% (IACS), and thermal expansion coefficient of about 71 × 10 ^-7 / ° C. No inductance is generated. As a result, noise caused by the back electromotive force induced by the self-inductance is minimized, and the semiconductor element housed therein can always operate normally.

In addition, the signal propagation speed of the external lead terminal can be made extremely fast, so that even when the semiconductor element housed in the insulating container is driven at high speed, the transfer of signals between the semiconductor element and the external electric circuit is always stable, In addition, it is possible to make sure.

Furthermore, even if the line width of the external lead terminal is reduced, the electric resistance of the external lead terminal can be kept low. The supplied electric signal can be input accurately.

Further, the thermal expansion coefficient of the external lead terminal is close to the thermal expansion coefficient of each of the insulating base, the lid and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid,
Even if each of them is attached and bonded with a sealing glass member, the thermal expansion coefficient is different between the insulating base and the lid and the sealing glass member, and between the external lead terminal and the sealing glass member. No thermal stress is caused by this, and it is possible to firmly attach and join all of them.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element according to the present invention, and FIG. 2 is a plan view of the package shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Lid 3 ... Insulating container 5 ... External lead terminal 6 ... Glass member for sealing

Claims (1)

(57) [Claims] An insulating container, comprising an insulating base and a lid, having a space for accommodating a semiconductor element therein, and an external container for connecting the semiconductor element contained in the container to an external electric circuit. In the semiconductor device housing package comprising lead terminals, the insulating base and the lid are made of a spinel or steatite sintered body, and the external lead terminals are made of nickel.
31.5-32.5Wt%, Cobalt 16.5-17.5Wt%, Iron 50.0
Characterized by being formed of a metal body in which a copper plate having a thickness of 60 to 80% with respect to the thickness of the plate body is joined to upper and lower surfaces of a plate body made of an alloy of 5 to 52.0 Wt%. package.