JP2746554B2 - Ion beam removal processing method and apparatus, and ion beam local film forming method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a high-brightness ion beam.
Removal of fine patterns such as highly integrated devices using
Process and ion beam removal
Method, apparatus, ion beam local film forming method and method
And its devices. [0002] 2. Description of the Related Art Semiconductor integrated circuits, GaAs devices, magnetic
Pattern for bull memory, Shosefson device, etc.
The width and wiring width are steadily miniaturized. That is, 3
A device with a width of 2 μm to 2 μm is realized,
m, 1 μm, and submicron wiring width devices are being developed.
There are two. Conventionally, these devices are in the device development stage.
Cutting of wiring for debugging and production of devices
Relief, write, resistance / capacity of defective part at the stage
・ Means such as disconnection and connection of some elements for adjustment
I have been. [0003] The following is a typical application for debugging.
The cutting of the Al wiring will be described. The following are Au and Poli
It is clear that it can be applied to wiring such as Silicon.
is there. [0004] Semiconductor integrated circuits (hereinafter referred to as "IC")
In the design and development process
Therefore, the prototype chip does not operate as it is
There are many. In this case, in order to determine
It is necessary to perform operation tests, etc. by cutting the wiring on the sides.
You. For a pattern of 5 μm or more,
Manipulator while observing the device with a microscope
To cut with a thin metal needle attached to
Was used. However, this method has a low success rate
Since it requires skill, it is not used for ICs with a pattern of 3 μm or less.
Not available. Fig. 1 Cutting of IC wiring by laser
Is shown. Laser beam from laser oscillator 1
After the beam 1a is reflected by the mirror 2, the lenses 3a and 3b
Beam by the beam expander 3 composed of
A rectangular pattern with variable diameters 5 and 6 that can be expanded in diameter
Is placed on the stage 9 by the lens 7
An image is formed on the sample 8. In this case, the reference light run
The light from the lens 2a is reflected by the concave mirror 2b,
c to form a parallel beam and follow the same path as the laser beam
It passes through and forms an image on the wiring.
Can be positioned. That is, in FIG.
The Al wiring portion 11 is adjacent to the portion 10 having no wiring.
You. That is, the cross section is as shown in FIG.
SiO on the substrate 13_TwoOf the insulating layer 12 is projected,
Adjust the width of the lit with the micrometer 5a, 5b
Match the width of the wiring 11 to be cut. Then the laser
When irradiated, the laser beam forms an image at exactly the same position 12 and
Remove the part. [0005] The above prior art (IC wiring cutting by laser)
In the case of ref.), The following problems existed. That is,
The part melted by the laser scatters around and attaches to the adjacent part.
Contact, deteriorates the characteristics, and causes a short circuit. Also below
Cause damage to the part of Si, and part of the Si melts
The rise causes a short circuit with the Al wiring. Ma
On the side without the adjacent Al wiring
And damage the underlying Si, and A
It is easy to cause a short circuit of 1-Si. This is mainly
It is difficult to position the irradiation area of the laser
Irradiation to parts without wiring, heat conduction and scattering of Al
In this case, it is to damage adjacent Si portions. In particular, as shown in FIG.
If the passivation film 18 is coated,
Film 18 is generally made of SiO._Two, Si_ThreeN_FourMade of
Because it is transparent to laser light,
Without processing, the lower Al wiring 15 absorbs laser and heat energy
Rushed to break the upper passivation film
It will come out. So in this case it will fly
Al particles are better than without passivation film
It has high crab energy, as shown in Figure 6.
Easy to damage the bottom and surroundings and passivation
Cracks also occur in the film itself. Furthermore, the cutting part
Hole 20 is formed in the passivation film.
It seems that there is no way to fill this, resulting in deterioration of characteristics
Challenges. [0007] Further, as a fundamental problem, ICs are fine.
, High integration, wiring width from 2 μm to 1.5 μm, 1 μm
m and rust micron
The wiring cutting method by user processing has a limit. Ie figure
The imaging projection method shown in FIG.
The beam is narrowed down by the lens 21 and the sample is placed at the focal point 22.
And processing it, because of the diffraction limit of the laser beam
Wavelength (0.5 μm in visible light)
Have difficulty. Furthermore, in laser processing, the material emits laser light.
Absorbs it and turns it into heat before blowing it off
Shadows due to heat conduction and melt-out
It is impossible to avoid the effect, and the processing zone and heat affected zone are not
It usually used to be larger than the pot diameter. You
That is, the practical minimum processing size is about 1 μm.
Therefore, the laser processing method is applied to the wiring pattern
It was difficult to apply. The prior art is disclosed in Japanese Patent Application Laid-Open No. 56-801.
No. 31, JP-A-56-94630, Apply
Physics, Letter "A High Intensity"
Scanning ion probe with sub microphone
Spot size (Appl. Phys. Lett. 3
4 (5), "A highintensity scanning ionprobe with subm
icrometer spot size ") P310-311, 1979
Published on March 1st and RIKEN Semiconductor Engineering Laboratory
Japan Society for the Promotion of Science (JSPS)
132th Committee 13th Symposium
"Ion implantation and submicron processing" Date and time February, 1982
3rd to 5th, p. 19-22, "Micronization by Liquid Metal Ion Source"
A small focusing device "is known. Both conventional technologies are simply
Describes sputter etching technology using focused ion beam
It is listed. And the SIM observation device simply
It's just an observation of the etched state
It is. [0009] Also, microcircuit engineering
'79 Proceeding 358-359
“Ion-Projection-System for My
Crossostructure Fabrication ”(Microcirc
uit Engineering '79 PROCEEDINGS P.E. 358-3
59 "ION-PROJECTION-SYSTEM FOR MICROSTRUCTURE FAB
RICATION ") is known.
A projection exposure apparatus is described. [0010] SUMMARY OF THE INVENTION The object of the present invention is to
In order to solve the problems of the prior art,
To the material without damaging the surroundings and very
Fast, very fineNapaPosition the turn with super precision
Ion beam that can be removed by sputtering
It is an object of the present invention to provide a method and an apparatus for removing a memory. Another object of the present invention is to provide a completed IC element.
Without damaging the surroundings of samples such as
One very fast and very fineNapaSuper precision for turns
Ion beam localization that enables local deposition
An object of the present invention is to provide a film forming method and an apparatus therefor. [0012] [MEANS FOR SOLVING THE PROBLEMS] To achieve the above object
In particular, the present invention relates to an ion beam emitted from a high-intensity ion source.
With focusing opticsAlmost parallelFocus on the ion beam bundle
And irradiate the beam pattern forming section with the beam pattern
The beam pattern image obtained by passing through the
Reduced projection imaging at a position on the sample
Sputter removal is applied to the image pattern
Ion beam removal processing method characterized by performing
is there. The present invention also relates to the ion beam removing process.
The method wherein the beam pattern image is a rectangular image.
And features. Further, the present invention provides the above-mentioned ion beam removal.
In the processing method, the high-brightness ion source is a liquid metal ion source.
It is characterized by being. Further, the present invention provides a high-brightness ion source and the high-brightness ion source.
Ion beam emitted from the ion sourceAlmost parallelI
Focusing optical system for focusing on an on-beam bundle, and the focusing optical system
Focused onAlmost parallelThe ion beam is irradiated
Beam pattern to obtain a beam pattern image by passing
Beam forming section and beam obtained from the beam pattern forming section.
Projection of the beam pattern image to the position
And a reduction projection optical system for forming a shadow image.
Is reduced and projected at the position on the sample
Sputter removal processing for the formed image pattern shape at once
Ion beam filtering characterized by performing
It is a leaving processing device. Further, the present invention provides an ion beam removing / processing apparatus.
smellThe beam obtained from the beam pattern forming unit
So that the pattern image is formed as a rectangular imageWhat we configured
It is characterized by. The present invention also provides an ion beam removal processing apparatus.
OdorThe beam obtained from the beam pattern forming section.
The pattern image is variableIt is characterized by comprising. The present invention also provides a method for emitting light from a high-intensity ion source.
Focused ion beam with focusing opticsAlmost parallelAEON B
And irradiates the beam pattern forming part with the beam bundle.
Beam pattern image obtained by passing through the beam pattern forming unit
Is reduced to a position on the sample by the projection optics
Projection imaging and collective local deposition in the image pattern shape
Ion beam local deposition method characterized by performing
You. The present invention also provides the ion beam local deposition method.
And above the sampleGas that combines with the elements in the ion beam
AtmosphereIt is characterized by being. Further, according to the present invention, the ion beam local deposition is performed.
The method wherein the beam pattern image is a rectangular image.
And features. Further, the present invention provides the ion beam localization method.
In the film forming method, the high brightness ion source is a liquid metal ion source.
It is characterized by being. The present invention also provides a high-brightness ion source and the high-brightness ion source.
Ion beam emitted from the ion sourceAlmost parallelI
Focusing optical system for focusing on an on-beam bundle, and the focusing optical system
Focused onAlmost parallelThe ion beam is irradiated
Beam pattern to obtain a beam pattern image by passing
Beam forming section and beam obtained from the beam pattern forming section.
Projection of the beam pattern image to the position
And a reduction projection optical system for forming a shadow image.
Is reduced and projected at the position on the sample
So that local film formation is performed collectively on the
An ion beam local film forming apparatus characterized in that
You. The present invention also provides a high-brightness ion source and the high-brightness ion source.
Ion beam emitted from the ion sourceAlmost parallelI
Focusing optical system for focusing on an on-beam bundle, and the focusing optical system
Focused onAlmost parallelThe ion beam is irradiated
Beam pattern to obtain a beam pattern image by passing
Beam forming section and beam obtained from the beam pattern forming section.
Projection of the beam pattern image to the position
Reduced projection optics for shadow imaging and introduction of gas onto the sample
Gas introducing means, and introduced by the gas introducing means.I
Combines with elements in on-beamIn a gas atmosphere
Reduced to the positioned position on the sample by the reduction projection optical system
Local film formation collectively on small projection image-formed imaging pattern shape
Ion beam station characterized in that it is configured to perform
This is a film forming apparatus. As described above, according to the above configuration,
Using a high brightness ion source such as a liquid metal ion source,High brightness
The ion beam emitted from the ion source is focused by the focusing optics.
Focus the beam into an on-beam bundle, and
By irradiating the area where the
To get a beam pattern image,Reduction projection optical system
The magnification of is, for example, 40 times,The beam pattern forming section
Obtained fromFor example, a rectangle of 40 μmBeam path consisting of
Turn statueIf set with an accuracy of ± 2 μm,
When viewed, 1 μ
mThe imaging pattern shapeSet with an accuracy of ± 0.05μm
This is setImaging pattern shapeTo the surroundings based on
ofdamageAt a high speed without spattering
Removal processingIs a stationIn-situ film formation can be performed. [0021] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.
I will tell. FIG. 6 shows an embodiment of a wiring cutting apparatus according to the present invention.
Here is an example. The apparatus shown in FIG.
A lens barrel 39, a sample chamber 40, and a sample chamber 40 are connected to each other.
The sample exchange chamber 41, the evacuation system, and the mass
Stage 55, liquid metal ion source 65, control
(Bias) electrode 66, ion beam extraction electrode 6
7, aperture 69, electrostatic lenses 70, 71, 72,
Ranking electrode 73, aperture 74, deflection electrode 75,
76, filament electrode 77, control electrode
Source 78, power supply 79 for extraction electrode, power supply 8 for electrostatic lens
0, 81, high voltage power supply 82, power supply 8 for blanking electrode
3. Power supply for deflection electrode 84, power supply control device 85, sample chamber
Secondary charged particle detector 86 inserted in 40, SIM
(Scanning ion microscope) Observation device 87, ion beam
Means 89 for preventing spot disturbance due to electric charge.
You. The gantry 37 is supported by an air support 38.
Anti-seismic measures have been applied. The sample chamber 40 and the sample exchange chamber 41 are
The lens barrel 3 is set on the gantry 37 and is placed above the sample chamber 40.
9 are installed. The sample chamber 40 and the lens barrel 39 are connected by a gate bar.
The sample chamber 40 and the sample exchange chamber 4
1 is partitioned by another gate valve 43. The evacuation system is an oil rotary pump
47, oil trap 48, ion pump 49, turbo
It has a molecular pump 50 and valves 51, 52, 53 and 54.
It is configured. This vacuum exhaust system and the lens barrel 39,
The sample chamber 40 and the sample exchange chamber 41 are vacuum pipes 44 and 4
The lens barrel 39 and the sample chamber 4
0, sample exchange chamber 41 is 10 ~^FiveVacuum below torr
It is made up. The rotation stage terminal 61,
X, Y, and Z moving micro
Are mounted, and the movement
The loading table 55 is provided with these moving tools.
With the use of the icrometers 56, 57, 58 and the moving ring 59,
Fine movement in X, Y and Z directions and rotation in horizontal plane
The angle is adjusted. A sample stage 60 is provided on the stage 55 described above.
And the sample is placed on the sample stage 60.
ing. Then, the sample stage 60 is moved by the sample drawer 64.
Between the sample chamber 40 and the sample exchange chamber 41.
When changing the sample, open the gate valve 43 and
Pull the platform 60 into the sample chamber 40, close the gate valve,
Open the door of the sample exchange chamber 41, exchange and place the sample,
Close the gate, pre-evacuate the sample exchange chamber 41
Open the valve 43 so that the sample stage 60 enters the sample chamber 40.
It has become. In FIG. 6, the sample is indicated by reference numeral 90.
You. The liquid metal ion source 65 is
The head is provided facing the sample chamber 40. This liquid
The body metal ion source 65 shown in FIG. 7 is made of an insulator.
Base 650 attached to the base 650 in a U-shape
Filaments 651, 652, made of tungsten, etc.
Between the tips of the filaments 651 and 652.
A sharp needle 653 attached by pot welding or the like,
Metal 65 serving as an ion source attached to the needle 653
Examples of 4 include Ga, In, Au, Bi, Sn, and Cu.
Used. The filaments 651 and 652 are
As shown in FIG. 6 through the electrodes 651 ′ and 652 ′ of
Connected to the power supply 77 for the flamement connected to the high voltage power supply 82
Have been. The control electrode 66 is a liquid metal electrode.
Installed below the ON source 65 and connected to the high voltage power supply 82
And connected to a power supply 78 for other control electrodes.
A low positive / negative voltage is applied to the installation position of the control electrode 66.
To control the current, which is an ion beam. The extraction electrode 67 for the ion beam is
Control electrode 66 and a high-voltage power supply 8
2 is connected to the extraction electrode power supply 79 connected to
You. And a filament of the liquid metal ion source 65
651, 652, and 10 ~^Fiveless than torr
After being overheated and melted in a vacuum, the
When a negative voltage of several tens of KV is applied, liquid metal ions
From a very narrow area at the tip of the needle 653 of the source 65
An ion beam is extracted. Note that in FIG.
And the spot is indicated by reference numeral 68 '.
You. The aperture 69 is connected to the extraction electrode 67.
It is installed at the lower level and is extracted by the extraction electrode 67.
Only take out near the center of the ion beam
I have. The set of the electrostatic lenses 70, 71, 72 is an aperture
Arranged below the cheer 69 and connected to the high voltage power supply 82
Lens power supplies 80 and 81. these
The electrostatic lenses 70, 71, 72 of the
To focus the extracted ion beam.
You. The blanking electrode 73 is an electrostatic lens
72, and connected to the control device 85.
It is connected to a blanking electrode power supply 83. This
The ranking electrode 73 is an ion beam
Scan in the direction perpendicular to the direction toward the sample,
To the outside of the aperture 74 installed below the king electrode 73
And stop irradiation of the sample with the ion beam at high speed.
It has become so. The aperture 74 includes an electrostatic lens 70,
The ion beam spots focused at 71 and 72 are
4 or on the IC element shown in FIG.
So as to project with a spot diameter of 1 μm or less
Has become. The set of the deflection electrodes 75 and 76 has an aperture.
A. It is installed below the device 74 and connected to the control device 85.
Is connected to the deflection electrode power supply 84. This deflection electrode
75, 76 are focused by the electrostatic lenses 70, 71, 72
The spot of the ion beam is deflected in the X and Y directions.
On the sample (IC element shown in FIG. 4 or FIG.
Top) 0.3-0.1μm or smaller spot diameter
It is designed to be tied together. The filament of the liquid metal ion source 65
Power supply 77, control electrode power supply 78, ion beam
Power supply 79 for the extraction electrode of the camera and power supplies 80 and 81 for the lens
The high voltage power supply 82 for applying a voltage has a voltage of several tens of KV.
used. The control device 85 is provided for a blanking electrode.
Blanket through the power supply 83 and the power supply 84 for the deflection electrode.
Electrodes 73 and deflection electrodes 75 and 76 are fixed
Control to operate according to the The secondary charged particle detector 86 is provided in the sample chamber 4
It is installed toward the sample which is an IC element within 0,
In response to a control signal from the control device 85, the blanking electrode
The blanking electrode 73 and the deflection
The deflection electrodes 75 and 76 are controlled via the pole power supply 84,
Sample surface (step of IC element shown in FIG. 4 or FIG. 16 (a))
Surface of passivation film (protective film) 18 having difference)
In the observation area of 0.3 to 0.1 μm or less,
When the ion beam spot of the pot diameter is scanned and irradiated
Sample surface (passivation film with steps (protection
The secondary electrons or secondary ions emitted from the film) 18)
Receiving, converting the strength according to the step into the strength of the current,
The signal is sent to the SIM observation device 87
You. The SIM observation device 87 includes a CRT 8
8 is provided. Then, the SIM observation device 87 operates
From the pole power supply 84 to the amount of deflection of the ion beam in the X and Y directions
And receives a signal related to the CRT 88
Scanning a luminescent spot and determining the brightness of the luminescent spot by the secondary charged particles
It changes according to the current density signal sent from the detector 86.
Secondary electron emission at each point of the sample
SIM that can obtain the image of the sample according to the function, that is, the scanning type
Enlarged observation of the sample surface by the function of ion microscope
I am getting it. The spot of the ion beam due to the electric charge
A means 89 for preventing disturbance is provided between the deflection electrode 76 and the sample.
It has been. FIG. 8 of the means 89 for preventing this spot disturbance.
Indicates the direction that intersects the ion beam passage direction
Electronic showers 890 and 891 are opposed to each other.
The child showers 890, 891 are a cup-shaped main body 892,
Opening of the filament 893 and the main body 892 provided inside
And a grid-like extraction electrode 894 provided at the mouth.
It is configured. And each electronic shower 890, 891
Is pulled out from the filament 893 by the electrode 894.
An electron current 895 is extracted at an acceleration voltage of about 0 V,
895 into the space where the ion beam passes,
The beam is given a negative charge to neutralize it. This
In FIG. 8, reference numeral 68 denotes an ion beam, and reference numerals 75 and 76 denote deflections.
The electrode, 90 indicates a sample. Next, referring to FIG. 6 to FIG.
IC element of the present invention together with the operation of the example IC element repairing device
One embodiment of the correction method will be described. The sample 90, which is an IC element, is transferred to the sample exchange chamber 41.
Is placed on the sample stage 60 in the inside, and then the sample exchange chamber
41 was sealed and pre-evacuated by a vacuum exhaust system.
Thereafter, the sample is put into the sample chamber 40 via the sample drawer 64,
It is placed on the table 55. Then, the lens barrel 39 and the sample are evacuated by the vacuum exhaust system.
10 ~ in the room 40⁶Vacuum to about torr
Keep in state. Next, in the apparatus shown in FIG.
4 or 16 (a).
Or place the wafer on the stage 90 and cut the wiring
A method for performing the above will be described. First, the high voltage power supply 82
Power supply 77 for filament, power supply 78 for control power supply
Activate the power supply 79 for the extraction electrode and extract the liquid metal ion.
A high-intensity ion beam from the aperture 69 of the ion source 65
And the lens power supplies 80 and 81 are activated to
0.3 by the lenses 70, 71, 72 and the aperture 70
Focusing to a spot diameter of ~ 0.1 μm or less,
Set the ion beam irradiation condition to a low energy beam,
For blanking electrode by control signal from controller 85
Blanking via power supply 83 and power supply 84 for deflection electrode
The electrode 73 and the deflection electrodes 75 and 76 are controlled to
Or the observation area of the surface of the passivation film 18 of the wafer
Spot diameter of 0.3 to 0.1 μm or less
Scans and irradiates the ion beam spot of
At each point on the surface of the passivation film (protective film) 18
Secondary electrons output from the secondary charged particle detector 86
Is the step surface of the passivation film 18 due to secondary ions
Is enlarged by the CRT 88 of the SIM observation device 87
Observation and passivation obtained from the observed enlarged image
1 μm shown in FIG.
Set the range (cut point) to cut the following wiring.
Also, in the local film formation described later, the SIM observation device 87
The parameters obtained from the magnified image observed by the CRT 88
Local deposition based on step information of the passivation film 18
Setting the range is cheerful. And Ionbee
System irradiation conditions of 10 KeV or more,
Is placed at the point where the wiring set by the signal
An ion beam with a spot diameter of 3 to 0.1 μm or less
FIG. 12 (a) or FIG.
A hole is formed in the passivation film 18 as shown in FIG.
As shown in FIG. 12 (b) or FIG. 16 (b)
The wiring located under the hole is removed by sputtering.
Disconnect. In this case, in this case, the scan width and
Must be controlled by the deflection voltage control system.
It can be performed with high accuracy. FIGS. 9A and 9B show the processing method in this case.
(Processing method to cut wiring by sputter processing method)
You. In FIG. 9A, the passivation film 18 is covered.
Out of the Al wiring on the IC chip or wafer
It is assumed that the rectangular portion indicated by 2 is a range to be removed. this
Sometimes passivation observed as a SIM image
Diagram for 12 parts set based on step information of film 18
As shown in FIG. 9 (b), the focused ion beam was
00b, 200c,..., 200z in this order.
5 and 76, while focusing and irradiating,
Drill holes in the passivation film 18 and remove wiring on the irradiated part.
Cutting. FIG. 10 shows an embodiment of the present invention.
Projection of aperture at ion beam optical system
It shows a configuration that changes to the system. That is, high brightness
The ion beam emitted from the ON source 210 is an electrostatic lens(Focus
lens)201, 202, 203Focusedparallel
Beams and apertures 204, 205, 206, 20
7 is incident. This ion beam optical system is shown in FIG.
The configuration is the same as that of the laser optical system
The lenses 208 and 209 project a reduced image on the sample 210.
This is a shadow (reduction projection imaging). Where 211 is
3 shows an ion beam image formed by small projection imaging. For example, Len
If the lenses 208 and 209 are 40x magnification lenses,
Micrometer heads 204a, 2a
05a, 206a, and 207a to make a 40μ rectangle
If the accuracy is set to ± 2μ, the test is performed when the aberration is ignored.
On the surface of the sample, a 1 μm rectangular ion beam image was ± 0.2 mm.
It will be set with an accuracy of 05μ. Therefore high spirit
This is advantageous in that the degree (super-precision) positioning can be easily performed.
In this case, in FIG.
Set the aperture to irradiate the beam
The wiring 11 is cut by irradiating a beam. An ion beam optical system as shown in FIGS.
Is used to cut the wiring of the IC having a cross section as shown in FIG.
In other cases, the ion beam sputtering
Only the Al wiring 15 has no influence on the surroundings with precision
(No damage) and a cross section as shown in FIG. 11 is obtained.
Can be Next, a passivation coat as shown in FIG.
When cutting wiring with
In the case of processing by the
In order to process, first, as shown in FIG.
The passivation film 18 is processed to the surface of
Next, the Al wiring 15 is processed and a cross section as shown in FIG.
Get. Also in this case, unlike the case of laser processing,
Peripheral damage, below cracks in passivation film, adjacent
No damage to the part is seen. FIG. 13 shows an apparatus according to another embodiment of the present invention.
FIG. Here, the evacuation system and the secondary electron image
The spray, sample exchange chamber, rack, etc. are the same as in FIG.
Has been abbreviated. The liquid metal ion source 65 is made of Al--Si, Au
It is assumed that the ion source is a base metal ion such as -Si. Extraction electrode 6
6 and is controlled by the control electrode 67.
The received ion beam is flattened by lenses 70, 71 and 72.
It is a row beam, and a part of it is
EXB mass filter (mass separation device) 10
2 when passing through the EXB mass filter 102
The electric field E and the magnetic field B applied thereto are adjusted by the control unit 115.
Only ions of a certain mass go straight and the lower aperture
Pass through the beam 103 and ions of other mass
Is bent and kicked by aperture 103
Can be prevented from reaching below. Ion that went straight
Are focused by focusing lenses 104, 105, and 106.
Through the blanking electrode 73 and the deflection electrodes 75 and 76.
And reaches the sample surface 90. The sample chamber 120 is provided with an exhaust pump from the passage 119.
Exhausted by the pump. The sample chamber 120 contains N_TwoMoth
S, O_TwoGas introduction from gas cylinder 109 such as gas
The chisel 107 is installed, and the cylinder valve is
Controller 117. Also installed in sample chamber 120
Degree of vacuum inside the sample chamber 120 by the measured vacuum gauge 110
Is monitored, and a constant gas concentration is
The valve 108 is controlled so as to be in degrees. In the sample chamber
Is a quadrupole mass spectrometer in addition to the secondary electron detector 86
Has a secondary ion mass spectrometer 111 such as
When ion beam is irradiated to 90
The system for performing the mass analysis of the secondary ion includes one controller 118.
Control of the secondary ion mass spectrometer 111
The signal of the roller 112 enters this. 113 is an ion
In the power supply control unit, the current of the heater 65 of the ion source and the extraction
Current of electrode 66, voltage of extraction electrode 66, control
It controls the voltage of the electrode 67 and the like. 11
Reference numeral 4 denotes a power control unit for the first lens, and the first lenses 70 and 7
1, 72 are controlled. 115 is a power control unit
This controls the power supply of the EXB mass filter 102.
is there. Reference numeral 116 denotes a power supply control unit, and the second lenses 104 and 10
5 and 106 are controlled. Reference numeral 118 denotes a control unit, which is an ion source power control unit.
113, power supply control unit 114 for the first lens, EXB mask
Power supply control unit 115 for filter and power supply control unit for second lens
116 etc. are all controlled. In addition, they are omitted in the figure.
Power supply for blanking electrode 73 and deflection electrodes 75 and 76
The control unit is also controlled by the control device 118.
  FIG. 14A shows the output of the secondary ion mass spectrometer 111.
It shows. Al on Si as shown in FIG.
Of sample with thin film by ion beam from above
In this case, the secondary ion current is as shown in FIG.
At first, only Al (solid line) is shown. But Al
When the boundary between Si and Si is near, Si (dotted line) is seen
And it changes at the border, and continues to process
Then, Al does not come out and only Si exists. Like this
T when processing reaches the boundary₁Can detect
You. If this signal is used, the controller 118 of FIG.
Time when only Al is processed (end point where wiring is cut) t
₁Control such as stopping ion beam irradiation with
Can be. According to FIG. 13, as shown in FIG.
After cutting the Al wiring except for the passivation film of the part
The holes in the passivation film can be filled. sand
That is, as the ion source 65, for example, Au—Si alloy ion
Au source by the EXB mass separator 102 using the
Only the ON is taken out and processed, and as shown in FIG.
After processing the passivation film and Al wiring,
Change the electric and magnetic fields applied to the separator,
Try to take out only. Also, the valve of the gas cylinder 109
Open 108, O_TwoA gas is introduced into the sample chamber 120 and a vacuum is applied.
Measure the pressure with a gauge and control it to a constant pressure.
The opening and closing of the valve 108 is controlled by the roller 117. The electric power applied to the first lens and the second lens
The pressure is changed by the power supply control units 114 and 116 to change the ion beam.
Is fine to the sample part with energy of several KeV to several tens eV
It is made to enter while being focused. (When processing
Has an energy of 10 KeV or more. ) Such a low
At energy, the ion beam adheres to the sample surface and
A position is made. As described above, the pattern shown in FIG.
O in the opening of the passivation film 18_TwoSi in the atmosphere
Irradiate the on-beam, thereby, as shown in FIG.
SiO_TwoThe film 111 can be deposited. As a gas to be introduced, O_TwoN instead of_TwoUsing
Then, Si_ThreeN_FourFilms can also be deposited. This
A hole in the passivation film 18 above the cut portion of the Al wiring
Filling and recoating the passivation film
To prevent deterioration of the device and to reduce electrical characteristics.
Can be standardized. FIGS. 16A to 16E show the apparatus shown in FIG.
This is a new embodiment of the present invention. That is, the Al wiring is
It runs on two layers and at the intersection, the lower layer
This section shows how to cut with a robot. In FIG. 16A, S is placed on Si301.
iO_TwoAl wiring 302 is moved to the left and right through the insulating film 309 of FIG.
Run and put SiO on it_TwoAl wiring via insulating film 303
304 runs in the direction perpendicular to the paper surface. Furthermore, S
iO_TwoIs formed.
In this case, only the lower Al wiring 309 is cut.
The method is described below. 13 as the ion source 65
EXB mass separator using Al-Si alloy ion source
Separates only Al ion beam by 102 and goes down
And irradiate the sample shown in FIG.
To obtain a cross section as shown in FIG. Then E
By deflecting the electric and magnetic fields of the XB mass separator 102,
Extract only the i-ion beam downward, and
O from 109_TwoIs introduced into the sample chamber 120. Also lens
With the energy of several KeV or less
To irradiate the sample while focusing the Si ion beam
I do. In this way, the method described in detail above
O_TwoProcess the film to the height of the lower part of the original upper Al wiring
Vapor deposition is performed to obtain a cross section as shown in FIG. Moreover
Rear sample chamber O_TwoStopped gas and exhausted oxygen-free atmosphere
And the EXB mass separator 102 removes only Al
Fig. 16 (d) at the energy of several KeV or less
307 was obtained, and the original upper Al distribution was obtained.
Reshape the line. Further, a SiO 2 is formed on this in the same manner as before.
_TwoA film 308 is deposited to form a passivation layer. that's all
Of the lower Al wiring only at the intersection of the Al wiring
The cut could be made. FIG. 13 shows an EXB mask using an alloy ion source.
Extracting one of the metals with a separator
This is the case, but there is no suitable alloy ion source
It is necessary to prepare and switch several kinds of ion sources. Figure
FIG. 17A shows an example of such an apparatus, and FIG.
(A) shows the cross section. FIG. 17 (a)
The lens barrel 403 is a lens 413 deflector 414
Which element is included. The ion source section has a plurality of
The ON source containers 406a, 406b, 406c,.
Attached to the rotating body 415, and connected to the lens barrel.
In a vacuum container 416. These ion sources
The container has ion source portions 407a, 407b, 407c,.
Lead electrodes 408a, 408b, 408c,...
409a, 409b, 409c,...
You. Heater current, extraction voltage, control voltage, etc. are high
Introductory terminal 4 that also served as a terminal with a compression cable 412
11 and branch cables 410a, 41-b, 410
are introduced into each ion source by c. FIG.
In (a), the ion source 407a is connected to the optical system.
The rotating body 415 is centered on the shaft 405
Rotate and switch to ion sources 407b, 407c, ...
Can be used. In this device,
Angle reading machine so that ON source can be matched with high accuracy
The structure, fine adjustment mechanism, and fixing mechanism are attached.
Omitted. Using this apparatus, as shown in FIG.
Not only metal ion species that form a specific alloy, but also any liquid
Body metal ion sources (or other types of ion sources)
Combination can perform the above wiring repair process
Become. As described above, in the present invention, a liquid metal ion source was used.
As noted above, the present invention is directed to other types of high-intensity ion sources.
For example, cryogenic electric field ion source, micro discharge type
It can also be applied to an on-source or the like. [0063] According to the present invention, a liquid metal ion source
High intensity ion sourceAnd emitted from the high-intensity ion source.
The focused ion beam into an ion beam bundle by the focusing optics.
To obtain the beam pattern image of the beam pattern forming unit
Effective beam pattern image is obtained by irradiating the area
And thenOn the sample surface by reduction projection optics
In the projection projectionIon imaging pattern
ToIt is set with super precision of the order of 0.05 μm.
IonImaging patternTo the surroundings based ondamageGive
All at once, i.e. at high speed.
EngineeringIs a stationThis has the effect of being able to form a film locally. According to the present invention,Beam pattern formation
By configuring the dimensions as variable,AnyNo paTa
Removal processIs a stationFilm deposition
It has an effect that can be done.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration diagram showing a conventional laser wire cutting device. FIG. 2A is a diagram showing a method of cutting an Al wiring by the method.
FIG. 2B is a plan view of an Al wiring portion of C, and FIG. FIG. 3 is a plan view showing the influence on the periphery when the Al wiring is cut by a laser. FIGS. 4A and 4B are cross-sectional views of samples. FIG. 5 is a configuration diagram showing a conventional wiring cutting apparatus using a laser. FIG. 6 is a configuration diagram of a wiring cutting apparatus using an ion beam according to the present invention. FIG. 7 is a diagram showing a liquid metal ion source. FIG. 8 is a diagram showing neutralization of a beam by an electron shower. FIGS. 9 (a) and 9 (b) are front views showing wiring cutting by scanning with an ion beam, respectively. FIG. 10 is a configuration diagram showing an ion beam wiring cutting device by a projection method according to the present invention. FIG. 11 is a cross-sectional view of a sample. FIGS. 12A and 12B are sample cross-sectional views. FIG. 13 is a configuration diagram of an ion beam wiring repair apparatus including the metal ion source and the mass analyzer. FIG. 14A is a diagram showing an output of a mass spectrometer,
(B) is a cross-sectional view of the sample. FIG. 15 is a sectional view of a sample. FIGS. 16A to 16E are cross-sectional views showing a method of cutting a lower wiring. 17A is a diagram showing a wiring cutting device using an ion beam provided with many ion mirrors, and FIG. 17B is a cross-sectional view thereof. [Explanation of Reference Codes] 37: stand, 40: sample chamber, 41: sample exchange chamber, 55:
Mounting stage, 65: liquid metal ion source, 85, 118: control device, 86: secondary charged particle detector, 107: gas introduction nozzle, 210: high brightness ion source, 201, 202, 20
3: electrostatic lens, 204 to 207: aperture, 20
8, 209: lens, 210: sample

Continuation of the front page (72) Inventor Mikio Hongo 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Pref. Hitachi, Ltd. Production Engineering Laboratory (56) References JP-A-57-132653 (JP, A) Shu, 81 (205) (December 21, 1981), PP. 59-66 (SSD81-76) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/3205 H01L 21/3213 H01L 21/768 H01L 21/302 H01L 21/3065 H01L 21/461

Claims (1)

(57) [Claims] The ion beam emitted from the high-intensity ion source is focused by a focusing optical system into almost parallel ion beam fluxes, radiated to a beam pattern forming section, and a beam pattern image obtained by passing through the beam pattern forming section is reduced and projected. An ion beam removal processing method, characterized in that a reduced projection image is formed at a position positioned on a sample by an optical system, and sputtering removal processing is collectively performed on the formed image pattern shape. 2. 2. The method according to claim 1, wherein the beam pattern image is a rectangular image. 3. A high brightness ion source, a focusing optical system that focuses the substantially parallel ion beam bundle ion beam emitted from the high luminance ion source, substantially parallel <br/> ion beam flux converged by said population beam optics Is irradiated, and a beam pattern forming unit that obtains a beam pattern image by passing therethrough, and a reduction projection optical system that reduces the size of the beam pattern image obtained from the beam pattern formation unit to a predetermined position on the sample. An ion beam removal processing apparatus characterized in that the ion beam removal processing apparatus is provided so as to collectively perform sputtering removal processing on an image pattern formed by reduction projection imaging at a position positioned on a sample by the reduction projection optical system. 4. The ion beam emitted from the high-intensity ion source is focused by a focusing optical system into almost parallel ion beam fluxes, radiated to a beam pattern forming section, and a beam pattern image obtained by passing through the beam pattern forming section is reduced and projected. An ion beam local film forming method characterized in that a reduced projection image is formed at a position on a sample which is positioned by an optical system, and local film formation is collectively performed on the image forming pattern. 5. Gas on the sample that combines with the elements in the ion beam
Claim 4 characterized by the atmosphere
Ion beam topical film forming method of the mounting. 6. 5. The method according to claim 4, wherein the beam pattern image is a rectangular image. 7. A high brightness ion source, a focusing optical system that focuses the substantially parallel ion beam bundle ion beam emitted from the high luminance ion source, substantially parallel <br/> ion beam flux converged by said population beam optics Is irradiated, and a beam pattern forming unit that obtains a beam pattern image by passing therethrough, and a reduction projection optical system that reduces the size of the beam pattern image obtained from the beam pattern formation unit to a predetermined position on the sample. An ion beam local film forming apparatus characterized in that a local film is formed in a collective manner in an image forming pattern shape reduced and projected at a position on the sample by the reduction projection optical system. . 8. A high brightness ion source, a focusing optical system that focuses the substantially parallel ion beam bundle ion beam emitted from the high luminance ion source, substantially parallel <br/> ion beam flux converged by said population beam optics Is irradiated, a beam pattern forming unit that obtains a beam pattern image by passing therethrough, a reduction projection optical system that performs reduction projection imaging of the beam pattern image obtained from the beam pattern formation unit at a positioned position on the sample, Gas introducing means for introducing a gas onto the sample,
Conversion into elements in the ion beam introduced by the gas introduction means
Ion beam localization, wherein a local film formation is performed in a collective manner in an image pattern shape formed by reduction projection imaging at a position positioned on the sample by the reduction projection optical system in a combined gas atmosphere. Film forming equipment.