JP2748884B2 - Semiconductor element and semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used at a high frequency, and more particularly to an improvement in a transistor amplifying device requiring high output and low noise characteristics.

[0002]

2. Description of the Related Art A semiconductor amplifying element used in a high frequency band needs to increase a heat radiation effect and increase isolation of an input / output circuit with an increase in output and gain. Conventional semiconductor amplifiers have a structure in which the outer shape of the package is enlarged or a heatsink is added to the electrodes of the package or the semiconductor amplifier to enhance the heat dissipation effect. Is soldered or screwed between input and output (for example,
6-26955).

FIG. 12 shows a conventional semiconductor amplifying device. The conventional semiconductor device includes a package 1, a connection electrode portion 2 (for example, a base or gate electrode) connected to an external input circuit, and an external output. A connection electrode portion 3 (for example, a collector or drain electrode) connected to a circuit, a ground electrode portion 4a (for example, an emitter or source electrode), and a heat sink 4b
And a screw hole 4c for fixing the semiconductor amplifying element to an external circuit.

FIG. 13 shows an example of a conventional semiconductor amplifying device in which a ground electrode portion 5 is independent of a heat sink 6.

[0005]

FIG. 14 shows an example in which the conventional semiconductor amplifying device shown in FIG. 12 is incorporated in an amplifying device and used, and the connection electrodes 2 and 3 of the semiconductor amplifying device are connected to the amplifying device. Are bonded to the high-frequency input circuit 7 and the output circuit 8 formed on the circuit board 10 by soldering or the like, and the semiconductor amplifying element is fixed to the case 9 of the amplifying device with screws 11.

In such a semiconductor amplifying element, as a measure to cope with a case where a semiconductor chip needs to be enlarged and a heat radiation effect needs to be increased due to an increase in output, a package 1 or a conductor 4 is required.
Need to be larger. In this case, the interval between the high-frequency input / output circuits 7 and 8 is increased, and the depth and width of the groove of the case 9 are also increased.
The design of the output circuit and case had to be changed.

The complicated structure around the connection between the high-frequency input / output circuit and the semiconductor amplifying element causes high-frequency disturbance (disturbance in the electromagnetic field mode). There is a disadvantage that inconsistency is caused. In addition, when using a high-power or high-gain semiconductor amplifier in an amplifier, it is necessary to increase the high-frequency isolation between the high-frequency input and output, and to prevent high-frequency leakage between the high-frequency input and output circuits. In some cases, partitions are provided, and the position and shape of the partitions must be changed each time the shape of the semiconductor amplifying element changes.

Similarly, in the case of the conventional semiconductor amplifying element shown in FIG.
Design change of high frequency input / output circuit of amplifying device incorporating semiconductor amplifying device and partition for strengthening isolation,
This leads to an increase in the size of the device. In addition, the high-frequency discontinuity due to the widening of the high-frequency input / output circuit interval and the complicated shape of the heat sink becomes large, the high-frequency mismatch increases, the adjustment man-hour for matching increases, and the circuit loss decreases. Leads to an increase.

An object of the present invention is to provide a semiconductor element and a semiconductor device which realize a reduction in size and weight of the element itself.

[0010]

In order to achieve the above object, a semiconductor device according to the present invention is a semiconductor device having a package, a connection electrode portion, and a mounting hole. And heat dissipation of the semiconductor chip, and has an outer shape adapted to the inner surface of the recess of the mounting object, and the connection electrode portion is an electrode connected to an external circuit. The package is drawn out from the electrode of the semiconductor chip and provided in a concentrated manner in the same plane of the package, and the mounting hole fixes the package to a mounting target.

A semiconductor device according to the present invention is a semiconductor device comprising a combination of a semiconductor element and a case. The semiconductor element has a package, a connection electrode portion, and a mounting hole. Packaging and sealing the semiconductor chip,
And radiates heat of the semiconductor chip, has an outer shape adapted to the inner surface of the recess provided in the case, and the connection electrode portion is an electrode connected to an external circuit, and The package is pulled out from the electrode of the chip and provided in a concentrated manner in the same plane of the package, and the mounting hole is for fixing the package to the case,
The case holds the package of the semiconductor element and radiates heat from the package. The case has a circuit board, and the circuit board has an external input / output circuit formed therein, and is connected to the semiconductor element. The external input / output circuit is laid on the exposed surface of the case, and the external input / output circuit is electrically connected to the connection electrode of the semiconductor element.

The package has a cylindrical or polygonal outer shape.

In addition, the semiconductor device has a grounding electrode portion, and the grounding electrode portion is an electrode to be grounded, which is pulled out from an electrode of the semiconductor chip, is electrically connected to the package, and is grounded through the package. Is

The semiconductor device further includes a grounding electrode portion, and the grounding electrode portion is an electrode to be grounded, and is pulled out from the electrode of the semiconductor chip and is in the same plane of the package in which the connection electrode portions are concentrated. It is provided in.

Further, the connection electrode portion and the grounding electrode portion are provided so as to protrude outward from the package.

The mounting hole has a counterbore or a notch at an opening edge for accommodating the head of the mounting screw inside the package.

[0017]

The semiconductor device according to the present invention is used by being embedded in a recess of an object to be mounted, and the object to be mounted is used as a radiator. Thus, there is no need to attach a heat radiator to the package of the semiconductor element or the ground electrode portion, so that the semiconductor element itself can be downsized, and the semiconductor device incorporating the semiconductor element can also be downsized.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a perspective view showing a semiconductor element according to Embodiment 1 of the present invention, and FIG. 2 is a cross section showing a semiconductor device incorporating the semiconductor element according to the present invention shown in FIG. FIG.

In the figure, a semiconductor device according to the present invention has a package 1 and connection electrode portions 2 and 2 as a basic configuration.
And a mounting hole 1a. The package 1 is for externally sealing and encapsulating a semiconductor chip, particularly a semiconductor amplifying element, and radiating heat of the semiconductor chip. It has an outer shape that fits the inner surface.

The connection electrode portions 2 and 3 are electrodes to be connected to an external circuit, which are drawn out from the electrodes of the semiconductor chip and provided in a concentrated manner on the same surface of the package 1. The mounting hole 1a is used for fixing the package 1 to an object to be mounted using screws.

Further, according to the present invention, it is possible to constitute a semiconductor device incorporating the above-described semiconductor element, for example, an amplifier incorporating a semiconductor amplifier. The semiconductor device according to the present invention comprises a semiconductor element and a case 9. The semiconductor element has the package 1, the connection electrode portions 2, 3 and the mounting hole 1a as described above, and the package 1 has a semiconductor chip packaged and sealed. Stop,
In addition, the heat sink radiates the heat of the semiconductor chip, has an outer shape conforming to the inner surface of the recess 9a as an attachment object, and the connection electrode portions 2 and 3 are connected to the external circuits 7 and 8. Electrodes, which are drawn out of the electrodes of the semiconductor chip and are provided in a concentrated manner in the same plane of the package 1, and a mounting hole 1a is provided with a case for mounting the package 1 as an object to be mounted by using screws 11. 9 is fixed.

Further, the case 9 holds the package 1 of the semiconductor element and radiates heat from the package 1. The case 9 has a circuit board 10. Output circuits 7 and 8 are formed and laid on the surface of the case where the connection electrodes 2 and 3 of the semiconductor element are exposed. The external input / output circuits 7 and 8 are connected to the semiconductor element. It is configured to be electrically connected to the connection electrode portions 2 and 3.

Hereinafter, specific examples of the semiconductor element and the semiconductor device according to the present invention will be described with reference to FIGS. In the figure, a semiconductor device package 1 according to the present embodiment has a semiconductor chip such as a semiconductor amplifying device, for example, externally sealed, and has a cylindrical outer shape. A ground electrode portion (for example, an emitter or a source electrode) of the semiconductor element is drawn out from an electrode of the semiconductor chip and is electrically connected to the package 1, and other connection electrode portions (a base or gate electrode or the like) are connected. The electrode unit 3 (for example, a collector or drain electrode) is drawn out from the electrode of the semiconductor chip and provided in a concentrated manner in the same plane of the package 1.
It has a structure protruding in the same direction. The connection electrode portions 2 and 3 and the package 1 are electrically insulated by an insulating material.

The package 1 is provided with a mounting hole 1a therethrough, and a mounting screw 11a is provided at an opening edge of the mounting hole 1a.
A counterbore 1b is provided for receiving the head 11a. The counterbore 1b is for receiving the head 11a of the mounting screw 11 so that the head 11a does not protrude outside the package 1.

FIGS. 2 and 3 are a sectional view and a schematic view showing a semiconductor device when the semiconductor device shown in FIG. 1 is incorporated and used. The semiconductor element shown in FIG. 1 is fixed to a case 9 of a semiconductor device using a screw 11 in a through hole 1 a of a package 1. The case 9 has a recess 9 a in which the semiconductor element is stored and fixed, and a screw hole 9 b for receiving the screw 11. In this case, since the case 9 of the semiconductor device functions as a heat radiating plate for the semiconductor element, it is not necessary to provide a heat radiating plate in the element itself as in the conventional semiconductor element, and a large package or heat radiating plate for heat radiation becomes unnecessary. Thus, a small semiconductor amplifying element can be realized.

Further, in order to enhance the thermal conductivity between the case 9 and the package 1 of the semiconductor element, applying a material having high thermal conductivity (for example, grease) to the contact portion between them is also effective for heat radiation. In the case where the ground electrode is grounded via the package 1 as in the semiconductor device shown in FIG. 1, a conductor having good heat radiation efficiency is used as the case 9. In this case, applying a substance having good heat conductivity and electric conductivity (for example, grease) to the contact portion between the case 9 and the package 1 is also effective for heat dissipation and the like.

Further, in the semiconductor device of the present invention, the connection electrodes 2 and 3 protrude in the same direction, and the connection electrodes do not protrude outward at an angle of about 90 degrees or 180 degrees unlike the conventional type. For this reason, if the size of the package changes due to an increase in output or the like, the interval between the connection electrode portions 2 and 3 changes in the conventional semiconductor amplifying element, and accordingly, the interval between the high-frequency input / output circuits also changes, and A design change was required. In the semiconductor device of the present invention, since the distance between the connection electrode portions 2 and 3 can be kept unchanged even when the size of the package changes, the design of the high-frequency input / output circuit does not need to be changed, and the device can be downsized. . Further, the semiconductor element of the present invention
To be used by being embedded in the groove of the case 9 of the semiconductor device,
There is no need to leave a gap for the semiconductor element to enter between the high-frequency input / output circuits 7 and 8 as in the related art, and the high-frequency input / output circuits 7 and 8 can be formed on the same circuit board 10. As a result, the high-frequency mismatch caused by the large discontinuity in the structure of the connection between the high-frequency input / output circuit and the semiconductor element as in the conventional type can be reduced by using the semiconductor element of the present invention. The resulting circuit loss can also be reduced.

When the semiconductor element has a high output or a high gain, it is necessary to increase the isolation between the high frequency input / output circuits of the semiconductor device. In a semiconductor device using a conventional semiconductor element, the semiconductor element protrudes between the high-frequency input / output circuits, the shape of the heat sink and the like are complicated, and partitions for preventing high-frequency leakage to enhance isolation are provided. When provided between the output circuits, the number of steps for designing the shape and installation position of the partition increases, and the isolation is not sufficiently strengthened. Further, if the outer shape of the amplification element changes, the position and shape of the partition must be changed, which leads to an increase in design man-hours. FIG. 4 is a conceptual diagram in the case where a partition is provided in a semiconductor device using the semiconductor element of the present invention, for example, an amplifier. Since the package 1 of the semiconductor element does not protrude above the high frequency input / output circuits 7 and 8, the partition is provided. 1
2 can be easily formed by closely adhering to the circuit board 10 between the high-frequency input / output circuits, thereby enhancing isolation and reducing the number of design steps. Even if the shape of the semiconductor element changes, the position and shape of the partition plate, the high frequency input / output circuit 7,
Since no design change such as 8 is required, the number of design steps can be reduced.

FIG. 5 is a schematic diagram showing a case where the semiconductor device of the present invention is used by forcibly cooling a semiconductor device such as a low-noise amplifier, and the case 9 in which the semiconductor device is embedded is cooled. Since it can be easily tightly fixed to the container 13 by screwing or adhesive, the cooling effect can be enhanced and the number of design steps can be reduced.

6 to 11 show another embodiment of the semiconductor device according to the present invention. FIG. 6 shows a through hole 1 for screwing.
FIG. 7 shows a case in which a is provided not at the center of the package 1 but on both sides, and FIG. 7 shows a case in which the ground electrode portion 5 electrically connected to the package 1 inside is electrically independent of the package 1; Shows a package having a rectangular shape instead of a cylindrical shape, and FIG. 9 shows a package having a through hole 1a for screwing on a diagonal line of a rectangular package. FIG. 10 shows a circular package having notches 1c on both sides so that a screw head for screwing does not protrude, and FIG. 11 shows a rectangular package having notches 1c.

[0032]

As described above, according to the present invention, a case itself for embedding a semiconductor element in a case of a semiconductor device to be used as a heat sink is provided, and a package of the semiconductor element,
Since there is no need to attach a heat radiation plate for heat radiation to the connection electrode portion, the semiconductor element itself can be miniaturized, and the semiconductor device can also be miniaturized.

Also, since the semiconductor element does not protrude above the high frequency input / output circuit, the high frequency input / output circuit can be formed on one circuit board, so that the structural discontinuity is smaller than that of the conventional semiconductor element. Since high-frequency matching between the high-frequency input / output circuit and the semiconductor element can be easily realized, circuit loss and adjustment man-hours can be reduced. In addition, a partition for strengthening isolation can be easily formed between the high-frequency input / output circuits, and even if the package shape changes, there is no need to change the position and shape of the high-frequency input / output circuits and the partitions, thereby reducing design man-hours. Can be achieved.

Further, there is an advantage that when the cooling device is used by cooling with a low-noise amplifier or the like, it can be easily attached to a cooler, and the cooling effect can be enhanced.

[Brief description of the drawings]

FIG. 1 is a perspective view illustrating a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a semiconductor device according to the present invention using the semiconductor element shown in FIG.

FIG. 3 is a perspective view showing a semiconductor device according to the present invention using the semiconductor element shown in FIG. 1;

FIG. 4 is a perspective view showing a case where a partition is formed in the semiconductor device according to the present invention shown in FIG. 2;

5 is a cross-sectional view showing a semiconductor device according to the present invention when the semiconductor element shown in FIG. 1 is used after being cooled.

FIG. 6 is a perspective view showing another embodiment of the present invention.

FIG. 7 is a perspective view showing another embodiment of the present invention.

FIG. 8 is a perspective view showing another embodiment of the present invention.

FIG. 9 is a perspective view showing another embodiment of the present invention.

FIG. 10 is a perspective view showing another embodiment of the present invention.

FIG. 11 is a perspective view showing another embodiment of the present invention.

FIG. 12 is a perspective view showing a conventional semiconductor amplifying element.

FIG. 13 is a perspective view showing a conventional semiconductor amplifying element.

FIG. 14 is a perspective view showing a conventional amplifying device using the conventional semiconductor amplifying device shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Package 1a Through hole 1b Counterbore 1c Notch part 2, 3 Connection electrode part 4 Conductor part 4a Ground electrode part 4b Heat sink 4c Screw hole 5 Ground electrode part 6 Heat sink 7 High frequency input circuit 8 High frequency output circuit 9 Case DESCRIPTION OF SYMBOLS 10 Circuit board 11 Screw 12 Partition 13 Cooler

Claims (7)

(57) [Claims] 1. A semiconductor device having a package, a connection electrode portion, and a mounting hole, wherein the package is configured to package and seal a semiconductor chip and radiate heat of the semiconductor chip. It has an external shape that fits the inner surface of the recess of the mounting object, and the connection electrode portion is an electrode connected to an external circuit,
A semiconductor device, wherein the semiconductor device is drawn out from the electrode of the semiconductor chip and provided in a concentrated manner in the same plane of the package, and the mounting hole is for fixing the package to an object to be mounted. 2. A semiconductor device comprising a combination of a semiconductor element and a case, wherein the semiconductor element has a package, a connection electrode portion, and a mounting hole, and the package has a semiconductor chip packaged and sealed. To stop and radiate the heat of the semiconductor chip, and to have an outer shape adapted to the inner surface of the recess provided in the case, and the connection electrode portion is an electrode connected to an external circuit. ,
The package is drawn out of the electrodes of the semiconductor chip and provided in a concentrated manner in the same plane of the package. The mounting hole fixes the package to a case. The case holds the package of the semiconductor element. And a circuit board for radiating heat from the package, the circuit board having an external input / output circuit formed thereon, and a surface of the case where a connection electrode portion of the semiconductor element is exposed. A semiconductor device, wherein the external input / output circuit is electrically connected to a connection electrode of the semiconductor element. 3. The semiconductor element or the semiconductor device according to claim 1, wherein the package has a cylindrical or polygonal outer shape. 4. An electrode for grounding, wherein the electrode for grounding is an electrode to be grounded, is pulled out from an electrode of the semiconductor chip, is electrically connected to the package, and is grounded through the package. The semiconductor element or the semiconductor device according to claim 1, wherein: 5. A package having a grounding electrode portion, wherein the grounding electrode portion is an electrode to be grounded, and is pulled out from an electrode of the semiconductor chip, and is provided on the same surface of the package in which the connection electrode portions are centrally arranged. The semiconductor element or the semiconductor device according to claim 1, wherein the semiconductor element or the semiconductor device is provided inside the semiconductor device. 6. The connecting electrode portion and the grounding electrode portion,
The semiconductor element or the semiconductor device according to claim 1, wherein the semiconductor element or the semiconductor device is provided so as to protrude outward from the package. 7. The mounting hole according to claim 1, wherein a counterbore or a notch for accommodating a head of a mounting screw inside the package is provided at an opening edge of the mounting hole. Or a semiconductor element or a semiconductor device according to 2.