JP2750354B2 - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JP2750354B2 JP2750354B2 JP63237422A JP23742288A JP2750354B2 JP 2750354 B2 JP2750354 B2 JP 2750354B2 JP 63237422 A JP63237422 A JP 63237422A JP 23742288 A JP23742288 A JP 23742288A JP 2750354 B2 JP2750354 B2 JP 2750354B2
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- infrared detecting
- detecting element
- vacuum chamber
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002887 superconductor Substances 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 20
- 239000007788 liquid Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 238000001514 detection method Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- UZFMKSXYXFSTAP-UHFFFAOYSA-N barium yttrium Chemical compound [Y].[Ba] UZFMKSXYXFSTAP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は被測定物体が放射する赤外線を検出する赤外
線検出装置に関する。Description: BACKGROUND OF THE INVENTION The present invention relates to an infrared detection device that detects infrared light emitted from an object to be measured.
本発明は被測定物体が放射する赤外線を検出する赤外
線検出装置に関し、少なくとも超電動現象を発生し得る
温度まで冷却可能な冷却装置内に配設された赤外線検出
素子により被測定物が放射する赤外線を検出するように
した赤外線検出装置に於いて、少なくとも超電動現象を
発生し得る温度まで冷却可能な冷却装置内の赤外線検出
素子に直列に超伝導体を接続することにより、赤外線検
出素子の熱による破損を簡単な構成で確実に防止する様
にしたものである。The present invention relates to an infrared detection device that detects infrared light emitted by an object to be measured, and infrared light emitted by the object to be measured by an infrared detection element disposed in a cooling device that can be cooled to at least a temperature that can generate a super-motor phenomenon. In the infrared detecting device that detects the heat, at least a superconductor is connected in series to the infrared detecting element in the cooling device that can be cooled to a temperature at which a super-motor phenomenon can occur, so that the heat of the infrared detecting device can be reduced. This is to ensure that damage due to the above can be prevented with a simple configuration.
従来から被測定物本例えば、人体等から放射する赤外
線を検出する赤外線検出装置として第４図に示す如きも
のが提案されている。この第４図に於いて、冷却装置
（以下クライオスタットと記す）は真空室（１）を有
し、この真空室（１）により有底円筒形の容器（２）を
形成する。この真空室（１）により形成された容器
（２）はマホービンと同様に構成されたものである。こ
の真空室（１）により形成された容器（２）内に冷却液
例えば沸点が−196℃の液体窒素（３）を注入する。こ
の真空室（１）の液体窒素（３）に接触している内側壁
（1a）の所定位置を囲む如く前方に絞りを構成する赤外
線通過孔（4a）を有する、例えば銅板より成るコールド
シールド室（４）を設け、このコールドシールド室
（４）内の液体窒素（３）と接触する内側壁（1a）に例
えばホトコンダクティブタイプの半導体赤外線検出素子
（５）を接着固定する。この場合この半導体赤外線検出
素子（５）は液体窒素（３）と接触する内側壁（1a）に
接着されると共にコールドシールド室（４）内に配され
ているので、この半導体赤外線検出素子（５）の温度は
この液体窒素（３）の沸点、例えば−196℃と略同じ温
度となり、この半導体赤外線検出素子（５）自体及びそ
の近辺より赤外線は殆んど放射されず、この半導体赤外
線検出素子（５）はその周辺よりの赤外線の照射は殆ん
どなくそれだけ雑音の影響が少なくなる。このホトコン
ダクティブタイプの半導体赤外線検出素子（５）は照射
される赤外線の量に応じて抵抗値が小さくなるもので、
例えば第５図に示す如く定電流回路（６）よりスイッチ
（７）を介して、この半導体赤外線検出素子（５）に一
定電流を流しておき、この半導体赤外線検出素子（５）
の両端間に得られる電圧をプリアンプ（９）を介して出
力端子（10）に導出して検出し、これにより赤外線の
量、即ち温度を検出する様にする。この第５図に於い
て、（８）は直流電圧が供給される電源端子である。こ
の様な電源端子（８）と出力端子（10）は真空室（１）
の外側壁（1b）に配設したシール端子（11），（12）に
接続されている。シール端子（11），（12）はハーメチ
ック端子の如きもので真空室（１）内を真空に保ったま
ま電気信号を入出力させることが出来る。Conventionally, an infrared detecting device as shown in FIG. 4 has been proposed as an infrared detecting device for detecting infrared radiation emitted from an object to be measured, for example, a human body. In FIG. 4, a cooling device (hereinafter referred to as a cryostat) has a vacuum chamber (1), and the vacuum chamber (1) forms a bottomed cylindrical container (2). The container (2) formed by the vacuum chamber (1) has the same configuration as that of the mahobin. A cooling liquid, for example, liquid nitrogen (3) having a boiling point of -196 ° C. is injected into a container (2) formed by the vacuum chamber (1). A cold shield chamber made of, for example, a copper plate and having an infrared passage hole (4a) which constitutes a diaphragm in front of a predetermined position of an inner wall (1a) in contact with liquid nitrogen (3) of the vacuum chamber (1). (4) is provided, and for example, a photoconductive type semiconductor infrared detecting element (5) is bonded and fixed to the inner wall (1a) in contact with the liquid nitrogen (3) in the cold shield chamber (4). In this case, the semiconductor infrared detecting element (5) is adhered to the inner side wall (1a) in contact with the liquid nitrogen (3) and is disposed in the cold shield chamber (4). ) Is substantially the same as the boiling point of the liquid nitrogen (3), for example, -196 ° C., and almost no infrared light is emitted from the semiconductor infrared detecting element (5) itself and its vicinity, and the semiconductor infrared detecting element In (5), there is almost no infrared irradiation from the periphery, and the influence of noise is reduced accordingly. This photoconductive type semiconductor infrared detecting element (5) has a resistance value that decreases according to the amount of infrared light irradiated.
For example, as shown in FIG. 5, a constant current is passed from the constant current circuit (6) to the semiconductor infrared detecting element (5) via the switch (7), and the semiconductor infrared detecting element (5)
Is output to the output terminal (10) via the preamplifier (9) and detected, whereby the amount of infrared rays, that is, the temperature, is detected. In FIG. 5, (8) is a power supply terminal to which a DC voltage is supplied. Such a power supply terminal (8) and an output terminal (10) are a vacuum chamber (1).
Are connected to the seal terminals (11) and (12) provided on the outer wall (1b) of the. The sealing terminals (11) and (12) are like hermetic terminals, and can input and output electric signals while maintaining the vacuum in the vacuum chamber (1).
更に従来の赤外線検出装置ではバイアス電流を流して
使用するがこの周囲温度が十分に冷却されていないと自
己過熱で破損する。この様な破損を防止するために赤外
線検出素子（５）の近傍に温度センサ（13）を設け、赤
外線検出素子近傍の冷却温度を検出し、その検出信号が
所定値以上となるとシール端子（15），（16）から取り
出してバイアス電流制御回路（14）を通してスイッチ
（７）を“オフ”させて赤外線検出素子にバイアス電流
を流さない様にしていた。Further, in the conventional infrared detecting device, a bias current is applied and used. However, if the ambient temperature is not sufficiently cooled, the device is damaged by self-heating. In order to prevent such damage, a temperature sensor (13) is provided near the infrared detecting element (5) to detect a cooling temperature in the vicinity of the infrared detecting element. ) And (16), the switch (7) is turned "off" through the bias current control circuit (14) to prevent the bias current from flowing to the infrared detecting element.
クライオスタットを構成する容器（２）のコールドシ
ールド室（４）の赤外線通過孔（4a）に対向するこの真
空室（１）の外側壁（1b）に赤外線ウインド（20）を設
ける。この赤外線ウインド（20）は略赤外線だけを通過
するゲルマニウム板により構成する。An infrared window (20) is provided on the outer wall (1b) of the vacuum chamber (1) facing the infrared passage hole (4a) of the cold shield chamber (4) of the container (2) constituting the cryostat. The infrared window (20) is made of a germanium plate that transmits substantially only infrared rays.
斯る従来の赤外線検出装置に於いて測定物体（17）の
温度分布を検出するときは真空室（１）の外と測定物体
（17）との間に配された水平及び垂直操作用のミラーよ
り成る検出点操作系（18）及びレンズ系（19）を介して
得られる検出点の赤外線を赤外線ウインド（20），赤外
線通過孔（4a）を通して半導体赤外線検出素子（５）に
照射する如くして行っていた。When detecting the temperature distribution of the measuring object (17) in such a conventional infrared detecting device, a mirror for horizontal and vertical operation arranged between the outside of the vacuum chamber (1) and the measuring object (17). The infrared ray at the detection point obtained through the detection point operating system (18) and the lens system (19) is irradiated to the semiconductor infrared detection element (5) through the infrared window (20) and the infrared ray passing hole (4a). I was going.
斯る従来の赤外線検出装置に於いては赤外線検出素子
（５）の価格はかなり高価なために温度センサ（13）や
バイアス電流制御回路（14）を用いて赤外線検出素子
（５）の破損防止を行なっているが、定電流回路（６）
と赤外線検出素子（５）間には周囲温度上昇時にバイア
ス電流を流すことを停止させるためのスイッチ（７）を
設けなければならないだけでなく、クライオスタットの
真空室（１）内に温度センサ（13）を設けたり、バイア
ス電流制御回路（14）を設けなければならず、もしこの
バイアス電流制御回路（14）が誤動作すると赤外線検出
素子（５）は破損してしまう問題があった。In such a conventional infrared detecting device, since the price of the infrared detecting element (5) is considerably high, the damage of the infrared detecting element (5) is prevented by using the temperature sensor (13) and the bias current control circuit (14). The constant current circuit (6)
A switch (7) for stopping the flow of the bias current when the ambient temperature rises must be provided between the infrared sensor (5) and the infrared sensor (5), and a temperature sensor (13) is provided in the vacuum chamber (1) of the cryostat. ) Or a bias current control circuit (14). If the bias current control circuit (14) malfunctions, the infrared detecting element (5) is damaged.
本発明は斯る点に鑑み簡単な構成で確実にこの赤外線
検出素子の破損を防止できるようにした赤外線検出装置
を得ることを目的とするものである。In view of the above, an object of the present invention is to provide an infrared detecting device that can reliably prevent damage to the infrared detecting element with a simple configuration.
本発明の赤外線検出装置は例えば第１図及び第２図に
示す如く、少なくとも超電導現象を発生し得る温度まで
冷却可能な冷却装置内に配設された赤外線検出素子
（５）により被測定物体（17）よりの赤外線を検出する
ようにした赤外線検出装置回路に於いて、少なくとも超
電導現象を発生し得る温度まで冷却可能な冷却装置内の
赤外線検出素子（５）に直列に超伝導体（21）を接続し
たものである。As shown in FIGS. 1 and 2, for example, as shown in FIGS. 1 and 2, the infrared detection device of the present invention employs an infrared detection element (5) provided in a cooling device that can be cooled to a temperature at which a superconducting phenomenon can occur. 17) In an infrared detector circuit adapted to detect infrared rays, a superconductor (21) is connected in series with an infrared detector (5) in a cooling device capable of cooling at least to a temperature at which a superconducting phenomenon can occur. Are connected.
本発明によればクライオスタット内の超伝導体（21）
によって周囲温度が上昇すれば直ちに抵抗値は上昇して
バイアス電流が赤外線検出素子（５）に流れるのを素子
して赤外線検出素子の破損を防止し得る。Superconductor in cryostat according to the present invention (21)
As soon as the ambient temperature rises, the resistance value rises and the bias current flows to the infrared detecting element (5) to prevent the infrared detecting element from being damaged.
以下第１図乃至第３図を参照しながら本発明赤外線検
出装置の一実施例につき説明しよう。この第１図及び第
２図に於いて第４図及び第５図に対応する部分には同一
符号を付し、その詳細説明は省略する。Hereinafter, an embodiment of the infrared detecting apparatus of the present invention will be described with reference to FIGS. In FIGS. 1 and 2, parts corresponding to FIGS. 4 and 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.
本例に於いても第４図と同様にクライオスタットは第
２図示の様に真空室（１）により有底円筒形の容器
（２）を形成する。この場合容器（２）はマホービンと
同様に構成されたものである。この真空室（１）により
形成された容器（２）内に冷却液例えば沸点が−196℃
の液体窒素（３）を注入する。この真空室（１）の液体
窒素（３）に接触している内側壁（1a）の所定位置、本
例では内側壁（1a）の下方に前方に絞りを構成する赤外
線通過孔（4a）を有する例えば銅板より成るコールドシ
ールド室（４）を設け、このコールドシールド室（４）
内の液体窒素（３）と接触する内側壁（1a）に例えばホ
トコンダクティブタイプの半導体赤外線検出素子（５）
と超伝導体よりなる超伝導体線（21）を接着固定し、半
導体赤外線検出素子（５）と超伝導体線（21）とを直列
に接続し、その両端子をシール端子（22），（23）に接
続する様に成されている。In this embodiment, as in FIG. 4, the cryostat forms a bottomed cylindrical container (2) by a vacuum chamber (1) as shown in FIG. In this case, the container (2) has the same configuration as that of the mahobin. In a vessel (2) formed by the vacuum chamber (1), a cooling liquid, for example, having a boiling point of -196 ° C.
Of liquid nitrogen (3). At a predetermined position of the inner wall (1a) in contact with the liquid nitrogen (3) of the vacuum chamber (1), in this example, below the inner wall (1a), an infrared ray passing hole (4a) constituting a diaphragm is provided forward. A cold shield chamber (4) made of, for example, a copper plate having the cold shield chamber (4).
For example, a photoconductive type semiconductor infrared detecting element (5) is provided on an inner wall (1a) in contact with liquid nitrogen (3) in the inside.
And a superconductor wire (21) made of a superconductor are adhered and fixed, the semiconductor infrared detecting element (5) and the superconductor wire (21) are connected in series, and both terminals are sealed terminals (22), The connection is made to (23).
この場合この半導体赤外線検出素子（５）及び超伝導
体線（21）は液体窒素（３）と接触している内側壁（1
a）に接着されると共にコールドシールド室（４）内に
配されているので、この半導体赤外線検出素子（５）の
温度はこの液体窒素（３）の沸点例えば−196℃と略同
じ温度となり、この半導体赤外線検出素子（５）自体及
びその近辺より赤外線は殆んど放射されず、この半導体
赤外線検出素子（５）はその周辺よりの赤外線の照射は
殆んどなくそれだけ雑音の影響が少なくなる。In this case, the semiconductor infrared detecting element (5) and the superconductor wire (21) are connected to the inner wall (1) in contact with the liquid nitrogen (3).
The temperature of the semiconductor infrared detecting element (5) is substantially the same as the boiling point of the liquid nitrogen (3), for example, -196 ° C., because it is adhered to a) and disposed in the cold shield chamber (4). Almost no infrared radiation is emitted from the semiconductor infrared detecting element (5) itself and its vicinity, and the semiconductor infrared detecting element (5) is hardly irradiated with infrared rays from its surroundings, and the influence of noise is reduced accordingly. .
このコールドシールド室（４）の赤外線通過孔（4a）
に対向するこの真空室（１）の外側壁（1b）に略赤外線
だけを通過するゲルマニウム板により構成した赤外線ウ
インド（20）を設ける。Infrared hole (4a) of this cold shield room (4)
An infrared window (20) made of a germanium plate that transmits substantially only infrared light is provided on the outer wall (1b) of the vacuum chamber (1) facing the vacuum chamber (1).
尚（19a）はゲルマニウムより成る集光レンズであ
る。Incidentally, (19a) is a condenser lens made of germanium.
叙上の赤外線検出装置の構成を第１図に示す。第４図
の様にバイアス切換スイッチ（７）と温度センサ（13）
並にバイアス電流制御回路（14）は設けられず、電源端
子（８）から定電流回路（６）を通じて供給された電流
はシール端子（22）から超伝導体線（21）に供給され、
半導体赤外線検出素子（５）を通してシール端子（23）
に出力される。超伝導体線（21）としてはイットリウム
−バリウム−銅酸化物からなるY Ba2 Cu3 O7等の層状ペ
ロブスカイト構成の酸化物系超伝導体を用い得る。Y Ba
2 Cu3 O7のＹをNdの一部で置換したもの,Baの一部をSt
で置換したもの,Oの一部をＦ又はＳで置換したもの等で
構成してもよい。Y Ba2 Cu3 O7による超伝導体線によれ
ば伝導遷移温度Tcは液体窒素の大気圧仕立で77.3゜Kに
比べて第３図に示す様に92゜K程度で抵抗値は略無限大
に近い106Ωcm程度から10-25Ωcmに変化して抵抗値は零
となる。依って本例の半導体赤外線検出素子（５）が液
体窒素（３）で冷却された状態であれば超伝導体線（2
1）の抵抗値は零であり定電流回路（６）からの電流は
半導体赤外線検出素子（５）にバイアス電流を流すが、
液体窒素（３）が容器（２）内から蒸発したり、或は液
体窒素を入れ忘れたりした場合には超伝導体線（21）は
高抵抗値を示すため定電流回路（６）からのバイアス電
流はカットされるので半導体赤外線素子（５）は確実に
保護され破損することは全くない。FIG. 1 shows the configuration of the infrared detection device described above. As shown in FIG. 4, a bias changeover switch (7) and a temperature sensor (13)
Similarly, the bias current control circuit (14) is not provided, and the current supplied from the power supply terminal (8) through the constant current circuit (6) is supplied from the seal terminal (22) to the superconductor wire (21),
Seal terminal (23) through semiconductor infrared detector (5)
Is output to The superconductor wire (21) Yttrium - Barium - may use the oxide superconductor of lamellar perovskite structure such as Y Ba 2 Cu 3 O 7 comprising copper oxide. Y Ba
2 Cu 3 O 7 with Y substituted for part of Nd, Ba part for St
And O may be partially substituted with F or S. According to the superconductor wire of Y Ba 2 Cu 3 O 7, the conduction transition temperature Tc is about 92 ゜ K as shown in Fig. 3 compared to 77.3 ゜ K with the atmospheric pressure of liquid nitrogen, and the resistance value is almost infinite. The resistance changes from about 10 6 Ωcm, which is very large, to 10 -25 Ωcm, and the resistance value becomes zero. Therefore, if the semiconductor infrared detecting element (5) of this example is cooled by the liquid nitrogen (3), the superconducting wire (2
The resistance value of 1) is zero, and the current from the constant current circuit (6) causes a bias current to flow through the semiconductor infrared detecting element (5).
If the liquid nitrogen (3) evaporates from the container (2) or if the liquid nitrogen is forgotten, the superconductor wire (21) shows a high resistance value, so that the bias from the constant current circuit (6) is applied. Since the current is cut off, the semiconductor infrared element (5) is reliably protected and never damaged.
即ち、本例構成によれば半導体赤外線検出素子に直列
に超伝導体線を接続するだけの簡単な構成となり、従来
の様にバイアス切換スイッチ（７）や温度センサ（13）
並にバイアス電流制御回路（14）を必要とせず、また真
空室（１）からの電流を入出力するためのシール端子の
数も減少させることが出来る。That is, according to the configuration of the present embodiment, a simple configuration in which a superconductor wire is connected in series to a semiconductor infrared detecting element is provided, and a bias change switch (7) and a temperature sensor (13) are provided as in the related art.
In addition, no bias current control circuit (14) is required, and the number of seal terminals for inputting and outputting current from the vacuum chamber (1) can be reduced.
尚、上述では冷却装置としてクライオスタットを説明
したが、少なくとも超電導現象を発生し得る温度まで冷
却可能なスターリングエンジンクーラー等を用いて、本
発明を適用してもよく、本発明は上述の実施例に限定さ
れることなく、本発明の要旨を逸脱しない範囲で種々の
変形が可能であることは勿論である。In the above description, a cryostat has been described as a cooling device, but the present invention may be applied using a Stirling engine cooler or the like that can cool at least to a temperature at which superconductivity can occur. It goes without saying that various modifications are possible without departing from the spirit of the present invention.
本発明によれば赤外線検出素子の破損を、簡単な構成
で確実に防止することができる利益がある。ADVANTAGE OF THE INVENTION According to this invention, there exists an advantage that damage of an infrared detection element can be reliably prevented with a simple structure.
第１図は本発明の赤外線検出装置の一実施例を示す回路
図、第２図は本発明の赤外線検出装置の一実施例を示す
断面図、第３図は超伝導体線の抵抗−温度特性図、第４
図は従来の赤外線検出装置の例を示す断面図、第５図は
赤外線検出装置の説明に供する接続図である。 （１）は真空室、（1a）は内側壁、（1b）は外側壁、
（２）は容器、（３）は冷却液、（４）はコールドシー
ルド室、（５）は半導体赤外線検出素子、（10）は赤外
線ウインド、（21）は超伝導体線である。FIG. 1 is a circuit diagram showing one embodiment of the infrared detecting device of the present invention, FIG. 2 is a cross-sectional view showing one embodiment of the infrared detecting device of the present invention, and FIG. Characteristic diagram, 4th
FIG. 1 is a sectional view showing an example of a conventional infrared detecting device, and FIG. 5 is a connection diagram for explaining the infrared detecting device. (1) is a vacuum chamber, (1a) is an inner wall, (1b) is an outer wall,
(2) is a container, (3) is a cooling liquid, (4) is a cold shield room, (5) is a semiconductor infrared detecting element, (10) is an infrared window, and (21) is a superconductor wire.
Claims (1)
で冷却可能な冷却装置内に配設された赤外線検出素子に
より被測定物体が放射する赤外線を検出するようにした
赤外線検出装置に於いて、 上記少なくとも超電導現象を発生し得る温度まで冷却可
能な冷却装置内の赤外線検出素子に直列に超電導体を接
続したことを特徴とする赤外線検出装置。1. An infrared detecting device, wherein an infrared ray emitted from an object to be measured is detected by an infrared detecting element provided in a cooling device capable of cooling at least to a temperature at which a superconducting phenomenon can occur. An infrared detecting device comprising a superconductor connected in series to an infrared detecting element in a cooling device capable of cooling at least to a temperature at which a superconducting phenomenon can occur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63237422A JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63237422A JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0285728A JPH0285728A (en) | 1990-03-27 |
| JP2750354B2 true JP2750354B2 (en) | 1998-05-13 |
Family
ID=17015124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63237422A Expired - Lifetime JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2750354B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4607300B2 (en) * | 2000-08-30 | 2011-01-05 | 日置電機株式会社 | Cooling device and light detection device |
| CN105043558B (en) * | 2015-06-06 | 2017-11-28 | 中国科学院云南天文台 | A kind of screen method and device for high reverse side infrared radiation measurement |
-
1988
- 1988-09-21 JP JP63237422A patent/JP2750354B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0285728A (en) | 1990-03-27 |
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