JP2750554B2 - Vacuum suction device - Google Patents
Vacuum suction deviceInfo
- Publication number
- JP2750554B2 JP2750554B2 JP10409792A JP10409792A JP2750554B2 JP 2750554 B2 JP2750554 B2 JP 2750554B2 JP 10409792 A JP10409792 A JP 10409792A JP 10409792 A JP10409792 A JP 10409792A JP 2750554 B2 JP2750554 B2 JP 2750554B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- wafer
- suction
- minute
- vacuum suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明はLSI製造における、パ
タン転写装置,描画装置,各種プロセス製造装置,検査
測長装置などの試料保持装置に関し、特にその真空吸着
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample holding device such as a pattern transfer device, a drawing device, various process manufacturing devices and an inspection length measuring device in LSI manufacturing, and more particularly to a vacuum suction device thereof.
【0002】[0002]
【従来の技術】近年のLSI製造においては、半導体素
子の高集積化に伴って、サブミクロンオーダの微細な回
路パタンが要求されている。0.2μm以下のパタン寸
法においては、光転写技術に変わり、X線露光によるパ
タン転写が有望視されている。X線露光はマスクの回路
パタンの原画を1対1でウエハ上に投影して、回路パタ
ンを転写する。このため、マスクの原画寸法は半導体素
子回路パタンと同一でなければならず、マスクには、高
精度な回路パタンの位置精度と寸法精度が要求される。2. Description of the Related Art In recent LSI manufacturing, a fine circuit pattern on the order of submicrons is required as semiconductor devices become more highly integrated. For a pattern size of 0.2 μm or less, pattern transfer by X-ray exposure has been regarded as promising, instead of the optical transfer technique. In the X-ray exposure, an original image of a circuit pattern of a mask is projected onto a wafer in a one-to-one manner, and the circuit pattern is transferred. For this reason, the original dimensions of the mask must be the same as those of the semiconductor element circuit pattern, and the mask is required to have high-precision positional accuracy and dimensional accuracy of the circuit pattern.
【0003】マスクは、Siウエハのほぼ中央に回路パ
タンの原画を有するメンブレンが形成されている構成と
なっている。メンブレンは、面積が数10mm×数10
mm、厚さが1μm〜2μmである。このマスクの製作
精度やパタン転写精度を評価するため、マスクの回路パ
タンの位置や寸法精度を光波干渉測長機で測定する場
合、マスクは、従来から、LSI製造装置に用いられて
いる平面矯正型の真空吸着装置に保持していた。この測
長装置に用いられている真空吸着装置の平面図を図9
に、その断面図を図10に示す。The mask has a structure in which a membrane having an original image of a circuit pattern is formed substantially at the center of a Si wafer. The membrane has an area of several tens of mm x several tens
mm and a thickness of 1 μm to 2 μm. In order to evaluate the manufacturing accuracy and pattern transfer accuracy of the mask, when measuring the position and dimensional accuracy of the circuit pattern of the mask with an optical interference measuring machine, the mask is a flat surface correction device conventionally used in LSI manufacturing equipment. It was held in a vacuum suction device of a mold. FIG. 9 is a plan view of a vacuum suction device used in this length measuring device.
FIG. 10 shows a cross-sectional view thereof.
【0004】従来の真空吸着装置は、吸着物を平面に矯
正するために、吸着板1で吸着物であるウエハ2(図9
及び図10は、マスク200を保持しているため中央部
が抜けている。ここではマスク200を一様な厚さのウ
エハ2に置き換えて説明する)の裏面全面を吸着して保
持していた。吸着板1には、円環を同心状に配置して、
突起部3と溝部4を交互に形成する。突起部3の上面が
吸着面5となる。溝部4の底面には、真空排気穴6を開
ける。吸着板1の内部には排気用の通路7が設けてあ
る。各溝部4の排気穴6は排気通路7を経由して吸着板
1の下面、あるいは側面の排気口8に連通している。本
例では、排気口8は吸着面1の下面とした。排気口8は
真空ポンプに排気管で繋がっている。ここでは、真空ポ
ンプと排気管は図示していない。In a conventional vacuum suction apparatus, a wafer 2 (FIG. 9), which is an adsorbate, is adsorbed on an adsorber plate 1 in order to correct the adsorbate to a flat surface.
In FIG. 10 and FIG. 10, since the mask 200 is held, the central portion is missing. Here, the mask 200 is replaced with a wafer 2 having a uniform thickness.) Rings are arranged concentrically on the suction plate 1,
The protrusions 3 and the grooves 4 are formed alternately. The upper surface of the projection 3 becomes the suction surface 5. An evacuation hole 6 is formed in the bottom of the groove 4. An exhaust passage 7 is provided inside the suction plate 1. An exhaust hole 6 of each groove 4 communicates with an exhaust port 8 on the lower surface or side surface of the suction plate 1 via an exhaust passage 7. In this example, the exhaust port 8 is the lower surface of the suction surface 1. The exhaust port 8 is connected to a vacuum pump by an exhaust pipe. Here, the vacuum pump and the exhaust pipe are not shown.
【0005】ウエハ2を吸着板1上の吸着面5に載せた
状態で、真空ポンプを作動すると、その溝部4が真空と
なる。ウエハ2は、真空吸引力で吸着面5に押し付けら
れ、吸着板1に吸着し、ウエハ2の平面が矯正される。
吸着板1に吸着させたウエハ2の平面は吸着面5の平面
精度に依存する。吸着面5に凹凸や段差があると、ウエ
ハ2は吸着面5の凹凸や段差に倣うように吸着する。ウ
エハ2の表面には、吸着面5の凹凸や段差に対応した形
状の変化が現れる。このため、ウエハ2の平面を高精度
な平面形状にするには、高精度な平面を有する吸着面5
に吸着させる必要がある。When the vacuum pump is operated with the wafer 2 placed on the suction surface 5 on the suction plate 1, the groove 4 is evacuated. The wafer 2 is pressed against the suction surface 5 by a vacuum suction force, and is sucked on the suction plate 1 to correct the flat surface of the wafer 2.
The plane of the wafer 2 sucked on the suction plate 1 depends on the plane accuracy of the suction surface 5. If there are irregularities or steps on the suction surface 5, the wafer 2 will be sucked so as to follow the unevenness or steps on the suction surface 5. On the surface of the wafer 2, a change in shape corresponding to the irregularities and steps of the suction surface 5 appears. For this reason, in order to make the plane of the wafer 2 a highly accurate planar shape, the suction surface 5 having a highly accurate plane is required.
Must be adsorbed.
【0006】一方、ウエハ2にはそりや曲がり,厚さむ
らがあり、平面度は個々に異なる。高精度な平面を有す
る吸着面5に吸着させることにより、固有の平面度を有
するウエハ2の平面精度を向上させることができる。こ
のとき、ウエハ2は、吸着面5に倣うように強制的に変
形させられているため、高精度に製作された吸着面5に
吸着させて平面精度を向上させることは、かえってウエ
ハ2に歪を生じさせることになる。On the other hand, the wafer 2 has warpage, bending, and uneven thickness, and the flatness differs from one wafer to another. By adsorbing the wafer 2 on the suction surface 5 having a highly accurate flat surface, the planar accuracy of the wafer 2 having a unique flatness can be improved. At this time, since the wafer 2 is forcibly deformed so as to follow the suction surface 5, it is difficult to improve the planar accuracy by sucking the suction surface 5 manufactured with high precision. Will occur.
【0007】以上のような真空吸着装置でマスク200
を保持する場合、上記の吸着板1を用いて、吸着面5に
メンブレン202の周囲のSiウエハの部分を真空吸着
させる。このSiウエハは吸着面5に倣うように吸着す
るので、平面矯正により変形させられることになる。メ
ンブレン202は極めて薄いので、Siウエハの変形に
より、メンブレン202に歪が生じる。この結果、メン
ブレン202の歪による回路パタンの位置,寸法に誤差
を生じ、正確な値が得られないという問題があった。[0007] The mask 200 using the vacuum suction apparatus described above.
Is held, a portion of the Si wafer around the membrane 202 is vacuum-adsorbed on the adsorption surface 5 using the above-mentioned adsorption plate 1. Since the Si wafer is adsorbed so as to follow the adsorption surface 5, it is deformed by flattening. Since the membrane 202 is extremely thin, distortion occurs in the membrane 202 due to deformation of the Si wafer. As a result, there is a problem that an error occurs in the position and size of the circuit pattern due to the distortion of the membrane 202, and an accurate value cannot be obtained.
【0008】[0008]
【発明が解決しようとする課題】このように、マスク2
00の回路パタンの位置や寸法を測定し、マスク200
の精度評価をする場合、このような吸着板1を用いる
と、試料保持による歪で、回路パタンの位置変動や寸法
変化を生じ、マスク200上の回路パタンを正確に測定
できないという欠点があった。特に、サブミクロンオー
ダの回路パタンでは、吸着による歪は無視することがで
きない重要な問題点となっていた。また、マスク200
の回路パタンの位置や寸法測定の結果に信頼性が得られ
ないため、高精度な位置、寸法精度が要求される転写パ
タンは、原画201との精度比較が困難であるという問
題があった。As described above, the mask 2
Then, the position and size of the circuit pattern No. 00 are measured and the mask 200
When such a suction plate 1 is used to evaluate the accuracy of the above, there is a disadvantage that the distortion caused by the sample holding causes a position variation or a dimensional change of the circuit pattern, and the circuit pattern on the mask 200 cannot be measured accurately. . In particular, in a circuit pattern of a submicron order, distortion due to adsorption has been an important problem that cannot be ignored. Also, the mask 200
Since the reliability of the position and dimension measurement results of the circuit pattern cannot be obtained, there is a problem that it is difficult to compare the accuracy of the transfer pattern, which requires high-precision position and dimensional accuracy, with the original image 201.
【0009】本発明は以上の点に鑑み、このような課題
を解決するためになされたもので、その目的は、ウエハ
等の吸着物を変形させずに保持することのできる真空吸
着装置を提供することにある。In view of the above, the present invention has been made to solve such a problem, and an object of the present invention is to provide a vacuum suction device capable of holding an adsorbed material such as a wafer without deforming it. Is to do.
【0010】[0010]
【課題を解決するための手段】上記の目的を達成するた
め本発明の真空吸着装置は、基体の面上に真空吸引口を
もつ3個の真空固定部を設け、これらの各真空固定部
は、前記真空吸引口が開口する微小円環部と、この微小
円環部の上面に中央部が固着されかつ前記真空吸引口に
対応する開口を有し、前記微小円環部の外径より大きい
弾性変形可能なシード状の薄膜の真空封止部材とによっ
て構成され、前記各真空固定部の周りに前記基体面より
も高くかつ前記微小円環部の上面より低い台座を設けた
ことを特徴とするものである。また、本発明のうち請求
項2に記載された真空吸着装置は、前記真空封止部材が
特にポリイミドであることを特徴とする。To achieve the above object, according to an aspect of the vacuum suction device of the present invention, a vacuum suction port on a substrate surface
3 is provided a vacuum fixing portion, each of these vacuum fixing portion, and the minute annular portion in which the vacuum suction port is opened, this small with
The central part is fixed to the upper surface of the annular part and the vacuum suction port
Has a corresponding opening, larger than the outer diameter of the micro-annular part
An elastically deformable seed-like thin-film vacuum sealing member, and each of the vacuum-fixed portions is surrounded by the base surface.
And a pedestal that is higher than the upper surface of the minute annular portion . Further, in the vacuum suction device according to claim 2 of the present invention, the vacuum sealing member is particularly made of polyimide.
【0011】[0011]
【作用】本発明においては、ウエハ等の吸着物を各真空
固定部の微小先端部分に支えて3点で保持できるので、
その吸着物を変形させずに保持することができる。しか
も、吸着物を保持する各々の真空固定部の吸引口の周
面、すなわち前記真空吸引口が開口する微小円環部の上
面にポリイミド膜等の真空封止部材を設けているので、
その真空封止作用により吸着力が増大する。さらに、上
面が前記基体面よりも高くかつ前記微小円環部の上面よ
り低い台座を前記真空固定部の周りに設け、真空吸着装
置が吸着物を吸着していないときに微小円環部上面から
垂れ下がっている真空封止部材を支持するようにした。
これによって、真空吸着時には、空気が吸着物と上記真
空封止部材との隙間を流れるため、この隙間の圧力が減
少し、この真空封止部材が大気圧によって弾性変形し吸
着物に直接接触して前記吸着物を吸着保持するので、横
方向の力に対する拘束力が生じ、ウエハ等の吸着物の保
持を強固にすることができる。換言するならば、前記真
空固定部の周りに設けられた台座は、真空吸引時に真空
封止部材が容易に浮き上がるようにする。According to the present invention, the adsorbate such as a wafer can be held at three points by supporting the minute tip of each vacuum fixing portion.
The adsorbate can be held without being deformed. In addition, since a vacuum sealing member such as a polyimide film is provided on the peripheral surface of the suction port of each vacuum fixing portion holding the adsorbate, that is, on the upper surface of the minute annular portion where the vacuum suction port opens.
The suction force increases due to the vacuum sealing action. Furthermore, on
The surface is higher than the base surface and the upper surface of the minute annular portion.
Lower pedestal around the vacuum fixing part,
When the device is not adsorbing the adsorbate,
The hanging vacuum sealing member was supported.
Accordingly, during vacuum suction, air flows through the gap between the adsorbed material and the vacuum sealing member, so that the pressure in this gap decreases, and the vacuum sealing member elastically deforms due to atmospheric pressure and directly contacts the adsorbed material. Thus, the adsorbate is sucked and held, so that a restraining force against a lateral force is generated, and the hold of the adsorbate such as a wafer can be strengthened. In other words, the base provided around the vacuum fixing portion, so that floating facilitate vacuum sealing member during vacuum suction.
【0012】[0012]
【実施例】以下、本発明を図面に示す実施例に基づいて
詳細に説明する。本発明の実施例である吸着装置の平面
図を図1に、部分断面図を図2に示す。これらの図にお
いて、吸着装置のベースとなる平板10上には、真空吸
引のため微小口をもつ肉厚の薄い円環11を3個設置す
る。3つの微小吸引口をもつ円環11は、保持しようと
するウエハ20の外形寸法内に収まる正三角形の頂点の
位置に配置する。そして、微小吸引口をもつ円環11の
高さは3つとも同じで、ベースの平板10の表面よりわ
ずかに高くする。本実施例における3個の微小吸引口を
もつ円環11は正三角形の頂点の位置に限らず、自由に
配置してよい。また、吸引口の形状も円以外の楕円や矩
形でもよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings. FIG. 1 is a plan view of a suction device according to an embodiment of the present invention, and FIG. In these figures, three thin circular rings 11 having minute openings for vacuum suction are provided on a flat plate 10 serving as a base of the suction device. The ring 11 having three minute suction ports is arranged at the position of the vertex of an equilateral triangle that fits within the outer dimensions of the wafer 20 to be held. The height of the three rings 11 having the minute suction ports is the same, and is slightly higher than the surface of the flat plate 10 of the base. The ring 11 having three minute suction ports in the present embodiment is not limited to the position of the apex of the equilateral triangle, and may be freely arranged. The shape of the suction port may be an ellipse other than a circle or a rectangle.
【0013】このような微小吸引口をもつ円環11はそ
の縁12が吸着面となる。またこの円環11の縁12に
は、円環11の外形より大きな真空封止部材のポリイミ
ド膜13を貼る。このポリイミド膜13は、剥がれてい
る所や接着むらなどがないようにしっかりと円環11の
縁12に固着する。本例では、真空封止部材にポリイミ
ド膜13を用いたが、真空封止部材はポリイミド膜13
に限らず、吸着物に対し、厚さが極めて薄く、軟質で弾
性的性質を有するものであれば、どのような材料でもよ
い。微小吸引口をもつ円環11の内側の微小穴は、真空
排気用の排気穴14となるため、ポリイミド膜13で塞
がない。The edge 12 of the ring 11 having such a minute suction port serves as a suction surface. An edge 12 of the ring 11 is provided with a vacuum sealing member, polyimide, which is larger than the outer shape of the ring 11.
A film 13 is attached. The polyimide film 13 is firmly fixed to the edge 12 of the ring 11 so that there is no peeling off or uneven bonding. In this embodiment, polyimide vacuum sealing member
The vacuum sealing member is a polyimide film 13
Not limited to this, any material may be used as long as it is extremely thin, soft and elastic with respect to the adsorbed material. Since the minute holes inside the ring 11 having the minute suction ports become the evacuation holes 14 for evacuation, they are not closed by the polyimide film 13.
【0014】また、ベースの平板10内部には排気用の
経路15を形成して排気穴14と連通させ、そのベース
の平板10には排気口16を設ける。この排気口16の
位置は装置構成により決まり、平板10の側面,あるい
は下面に設けてもよい。ここでは、平板10の下面に設
けた。排気口16は、排気管を介して真空ポンプと接続
する。ここでは、排気管と真空ポンプは図示していな
い。An exhaust path 15 is formed inside the base plate 10 to communicate with the exhaust hole 14, and the base plate 10 is provided with an exhaust port 16. The position of the exhaust port 16 is determined by the apparatus configuration, and may be provided on the side surface or the lower surface of the flat plate 10. Here, it is provided on the lower surface of the flat plate 10. The exhaust port 16 is connected to a vacuum pump via an exhaust pipe. Here, the exhaust pipe and the vacuum pump are not shown.
【0015】ウエハ20は、ポリイミド膜13を貼った
3つの微小吸引口をもつ円環11上に載せる。この時、
ウエハ20は各円環11の3点だけで支える。ウエハ2
0を3つの円環11上に載せたとき、ウエハ20を一定
の位置に置くために、ウエハ20の側面を平板10上の
位置決めピン40に当てる。本例では、位置決めピン4
0は、ウエハ20のオリエンテーションフラットの位置
に2本、オリエンテーションフラットに平行な方向を規
制する位置に1本、合計3本配置した。位置決めピン4
0は、ウエハ20を一定の位置で保持できれば、本数,
配置位置に制限はない。また位置決めピン40の高さ
は、本例ではウエハ上面から飛び出さない高さにした。
位置決めピン40は、装置構成上、許される範囲の高さ
にしてもよいことは言うまでもない。The wafer 20 is placed on the ring 11 having three minute suction ports to which the polyimide film 13 is attached. At this time,
The wafer 20 is supported by only three points of each ring 11. Wafer 2
When the “0” is placed on the three rings 11, the side surface of the wafer 20 is brought into contact with the positioning pins 40 on the flat plate 10 in order to place the wafer 20 at a fixed position. In this example, the positioning pins 4
Reference numeral 0 denotes two wafers at the position of the orientation flat of the wafer 20 and one wafer at a position that regulates a direction parallel to the orientation flat. Positioning pin 4
0 indicates the number of wafers 20 if the wafer 20 can be held at a certain position,
There is no restriction on the arrangement position. In this example, the height of the positioning pins 40 is set so as not to protrude from the upper surface of the wafer.
It goes without saying that the positioning pin 40 may have a height within an allowable range in view of the device configuration.
【0016】一方、微小吸引口をもつ円環11の周りに
はその円環11の高さよりも低い、平板10の表面より
高い台座50を設ける。ウエハ20をポリイミド膜13
を貼った微小吸引口をもつ円環11の上に載せたとき、
ウエハ20と台座50との間にポリイミド膜13が入
り、自由に動くだけの隙間を設ける。台座50は、ポリ
イミド膜13の外形より大きくする。台座50は、ウエ
ハ20を吸着していないときにポリイミド膜13を支
え、ポリイミド膜13の垂れ下がりを抑える。真空吸引
時には、ポリイミド膜13が容易に浮き上がるようにす
る。On the other hand, a pedestal 50 which is lower than the height of the ring 11 and higher than the surface of the flat plate 10 is provided around the ring 11 having the minute suction port. Wafer 20 is coated with polyimide film 13
When placed on the ring 11 having a micro suction port with
The polyimide film 13 enters between the wafer 20 and the pedestal 50, and a gap is provided for free movement. The pedestal 50 is poly
It is made larger than the outer shape of the imide film 13. Pedestal 50 supporting the polyimide film 13 when not adsorbed to the wafer 20, suppress the sag of the polyimide film 13. At the time of vacuum suction, the polyimide film 13 is made to easily float.
【0017】ここで、円環11が平板10の表面よりわ
ずかに高く、ポリイミド膜13が真空吸引時に容易に浮
き上がることができるように装置構成ができ、ポリイミ
ド膜13が損傷しないように保護できれば、台座50は
設ける必要はない。真空ポンプ(ここでは、図示しな
い)を作動させて、真空排気をすると、ウエハ20は微
小吸引口をもつ円環11の縁12に真空吸着する。Here, the apparatus can be constructed such that the ring 11 is slightly higher than the surface of the flat plate 10 and the polyimide film 13 can be easily lifted during vacuum suction.
If the protective film 13 can be protected from damage, the pedestal 50 need not be provided. When a vacuum pump (not shown) is operated to evacuate the wafer, the wafer 20 is vacuum-sucked to the edge 12 of the ring 11 having a minute suction port.
【0018】ポリイミド膜13の吸着の原理は、次の通
りである。図3及び図4の部分断面の拡大図に示すよう
に、3つの微小吸引口をもつ円環11上にウエハ20を
載せた状態で、真空ポンプを作動して、排気管を通して
排気口16から排気すれば、排気口16から空気が吸引
され、空気がウエハ20の裏面と微小吸引口をもつ円環
11の縁12に貼られたポリイミド膜13との隙間を流
れるため、この隙間の圧力が減少し、ポリイミド膜13
が大気圧によって下方から押されて弾性変形し、ウエハ
20の裏面に吸着する。このため、ポリイミド膜13の
内側、すなわち、微小吸引口をもつ円環11内が真空と
なり、ウエハ20は大気圧によって、微小吸引口をもつ
円環11の縁12に押し付けられる。The principle of adsorption of the polyimide film 13 is as follows. As shown in the partial cross-sectional enlarged views of FIGS. 3 and 4, with the wafer 20 placed on the ring 11 having three minute suction ports, the vacuum pump is operated to pass the exhaust pipe 16 through the exhaust pipe. When the air is exhausted, air is sucked from the exhaust port 16 and the air flows through the gap between the back surface of the wafer 20 and the polyimide film 13 attached to the edge 12 of the ring 11 having the minute suction port. Decrease, polyimide film 13
Is elastically deformed by being pressed from below by the atmospheric pressure, and is attracted to the back surface of the wafer 20. For this reason, the inside of the polyimide film 13, that is, the inside of the ring 11 having the minute suction port is evacuated, and the wafer 20 is pressed against the edge 12 of the ring 11 having the minute suction port by the atmospheric pressure.
【0019】一方、ウエハ20を外すときは真空排気を
止め、排気穴14を大気圧にする。これにより、ポリイ
ミド膜13は自動的に弾性復帰するので、容易にウエハ
を外すことができる。排気穴14の口径は小さいので、
真空度は低く、ウエハを吸引する力は弱い。しかし、排
気穴14の周りのポリイミド膜13の真空封止作用によ
り吸着力が増大する。On the other hand, when removing the wafer 20, the evacuation is stopped and the evacuation hole 14 is set to the atmospheric pressure. As a result, the Porii
Since the mid film 13 automatically returns elastically, the wafer can be easily removed. Since the diameter of the exhaust hole 14 is small,
The degree of vacuum is low and the force for sucking the wafer is weak. However, the suction force increases due to the vacuum sealing action of the polyimide film 13 around the exhaust hole 14.
【0020】さらに、ポリイミド膜13の吸着によって
横方向の拘束力が生じ、ウエハ20の横方向の保持を強
固にする。このウエハ20の保持において、ウエハ20
を支えているのは3つの微小吸引口をもつ円環11だけ
である。微小吸引口をもつ円環11は肉厚が薄く、吸着
面となる縁12の面積は小さい。したがって、ウエハ2
0との接触面積は小さい。その上、真空吸引力が弱いの
で、微小吸引口をもつ円環11では、真空吸着によって
ウエハ20は変形しない。微小吸引口をもつ円環11と
ポリイミド膜13の他にウエハ20に接触しているもの
はない。したがって、ウエハ20を変形させる要因はウ
エハ20の自重だけである。Furthermore, the lateral restraining force is generated by the adsorption of the polyimide film 13, and the lateral holding of the wafer 20 is strengthened. In holding the wafer 20, the wafer 20
Is supported only by the ring 11 having three minute suction ports. The ring 11 having the minute suction port has a small thickness, and the area of the edge 12 serving as a suction surface is small. Therefore, wafer 2
The contact area with 0 is small. In addition, since the vacuum suction force is weak, the wafer 20 is not deformed by the vacuum suction in the ring 11 having the minute suction port. A ring 11 with a minute suction port
Nothing is in contact with the wafer 20 other than the polyimide film 13. Therefore, the only factor that deforms the wafer 20 is the weight of the wafer 20 itself.
【0021】また、微小吸引口をもつ円環11の縁12
は細く、面積が小さいので、その縁12上にゴミが滞留
する確率が小さい。一方、図5に示すように、ポリイミ
ド膜13上に滞留したゴミ30は、ポリイミド膜13が
柔らかいので、吸着時には、ポリイミド膜13に包ま
れ、ウエハ20を変形させることはない。このように、
ゴミ30がウエハ20の表面形状に及ぼす影響を小さく
することができるため、安定した高精度な平面を得るこ
とができる。The edge 12 of the ring 11 having a minute suction port
Is small and the area is small, so that the probability of dust remaining on the edge 12 is small. On the other hand, as shown in FIG. 5, polyimide
Since the polyimide film 13 is soft, the dust 30 staying on the dry film 13 is wrapped in the polyimide film 13 at the time of adsorption and does not deform the wafer 20. in this way,
Since the influence of the dust 30 on the surface shape of the wafer 20 can be reduced, a stable and highly accurate flat surface can be obtained.
【0022】図6及び図7に、本実施例の吸着装置を用
いて、4インチウエハの真空吸着前後の平面度を干渉計
により測定した結果を示す。図6は真空吸着前、図7が
真空吸着後である。真空吸着前後において、ウエハ20
表面の干渉縞の模様に変化は認められない。このことか
ら、真空吸着によってウエハ20は変形していないこと
が分かる。これにより、本実施例の吸着装置をX線露光
に用いるマスクに適用しても、半導体素子の回路パタン
の原画を有する極めて薄いメンブレンに歪を与えずに保
持することができる。このため、メンブレン上の回路パ
タンの原画の正確な位置,寸法計測ができる。FIGS. 6 and 7 show the results of measuring the flatness of a 4-inch wafer before and after vacuum suction with an interferometer using the suction apparatus of this embodiment. 6 shows the state before vacuum suction, and FIG. 7 shows the state after vacuum suction. Before and after vacuum suction, the wafer 20
No change is observed in the pattern of interference fringes on the surface. This indicates that the wafer 20 is not deformed by the vacuum suction. As a result, even when the suction device of this embodiment is applied to a mask used for X-ray exposure, it is possible to hold a very thin membrane having an original image of a circuit pattern of a semiconductor element without giving a distortion. For this reason, accurate measurement of the position and dimensions of the original image of the circuit pattern on the membrane can be performed.
【0023】次に、本実施例の吸着装置を光波干渉測長
機(ニコン製:Laser XY-31 )の試料移動機構のテーブ
ル上に取り付け、ウエハ20上に転写したパタンを対象
に、位置の再現性を測定した。測定は、4インチウエハ
に6mmピッチで2次元配列した25点の十文字マーク
の位置を計測した。測定は、この計測を20回繰り返し
行った。その測定の結果を図8に示す。パタン位置の再
現性は、X方向が3σで±0.012μm、Y方向が3
σで±0.010μmと高精度な値が得られた。ウエハ
20は、測定中にテーブルが2次元方向に移動しても動
かず、吸着装置に確実に保持されている。このため、半
導体素子の回路パタンの正確で安定した位置,寸法計測
ができる。Next, the adsorption apparatus of this embodiment is mounted on a table of a sample moving mechanism of a light wave interferometer (Nikon: Laser XY-31), and the position of the pattern transferred onto the wafer 20 is determined. The reproducibility was measured. In the measurement, the positions of 25 cross marks arranged two-dimensionally at a pitch of 6 mm on a 4-inch wafer were measured. The measurement was repeated 20 times. FIG. 8 shows the result of the measurement. The reproducibility of the pattern position is ± 0.012 μm at 3σ in the X direction and 3 in the Y direction.
A highly accurate value of ± 0.010 μm was obtained for σ. The wafer 20 does not move even if the table moves in the two-dimensional direction during the measurement, and is reliably held by the suction device. Therefore, accurate and stable position and dimension measurement of the circuit pattern of the semiconductor element can be performed.
【0024】このように、円環11の微小吸引口、すな
わち、排気穴14の口径は非常に小さいので、真空度は
低く、ウエハ20を吸引する力は弱いが、排気穴14の
周りにポリイミド膜13を設けたことによって、(i)
ポリイミド膜13の真空封止作用により吸着力が増大す
る、(ii)ポリイミド膜13の吸着によって横方向の
力に対する拘束力が生じるためウエハ20の保持を強固
にすることができる。上記の測定結果は、ポリイミイド
膜13が有効に作用していることを示す。[0024] Thus, small suction opening of the ring 11, i.e., the diameter of the exhaust hole 14 is very small, the degree of vacuum is low, the force for sucking the wafer 20 is weak, polyimide around the exhaust hole 14 By providing the film 13, (i)
The suction force is increased by the vacuum sealing action of the polyimide film 13, and (ii) the holding force of the lateral force is generated by the suction of the polyimide film 13, so that the holding of the wafer 20 can be strengthened. The above measurement results show that the polyimide film 13 is working effectively.
【0025】以上の結果により、本実施例の吸着装置で
は、真空吸着によってウエハ20は変形をしない。すな
わちウエハの平面性状を自然のまま、つまり加工仕上げ
面の状態で、ウエハを変形させずに保持することができ
る。また、試料移動機構のテーブル移動に伴う加減速
時、定速移動時の慣性力によって、ウエハ20が位置変
動や吸着装置からの脱落を起こさずに、ウエハ20を確
実に保持している。特に、微小口径の排気穴14である
ための低真空吸引力をカバーするポリイミド膜13の補
強効果が顕著である。From the above results, in the suction apparatus of this embodiment, the wafer 20 is not deformed by the vacuum suction. That is, it is possible to hold the wafer without deforming it while keeping the planarity of the wafer in its natural state, that is, in the state of the processed surface. Further, the wafer 20 is securely held without causing a position change or falling off from the suction device due to an inertial force at the time of acceleration / deceleration or constant speed movement accompanying the table movement of the sample moving mechanism. In particular, the effect of reinforcing the polyimide film 13 that covers the low vacuum suction force due to the minute-diameter exhaust hole 14 is remarkable.
【0026】[0026]
【発明の効果】以上説明したように本発明の真空吸着装
置は、ウエハ等の吸着物を3個の真空固定部の微小先端
部分に支えて3点で真空吸着することにより、吸着物を
変形させずに保持することができる。また、吸着物を保
持する各真空固定部の吸引口の周面にポリイミド膜等の
真空封止部材を設けているので、その真空封止作用によ
り吸着力が増大するとともに、その吸着によって横方向
の力に対する拘束力が生じるため、ウエハ等の吸着物の
保持を強固にすることができる。さらに、上面が前記基
体面よりも高くかつ前記微小円環部の上面より低い台座
を前記真空固定部の周りに設けたことによって、真空吸
着装置が吸着物を吸着していないときに微小円環部上面
から垂れ下がっている真空封止部材を支持し、真空吸引
時には前記真空封止部材が容易に浮き上がるようにな
る。 As described above, the vacuum suction device of the present invention deforms the suction object by supporting the suction object such as a wafer on the microscopic tips of the three vacuum fixing parts at three points under vacuum. It can be held without doing so. In addition, since a vacuum sealing member such as a polyimide film is provided on the peripheral surface of the suction port of each vacuum fixing portion for holding the adsorbed material, the suction force is increased by the vacuum sealing action, and the suction force increases the lateral direction. Therefore, the holding force of the adsorbate such as a wafer can be strengthened. Furthermore, the upper surface is
A pedestal that is higher than the body surface and lower than the upper surface of the minute annular portion
Is provided around the vacuum fixing part, so that
When the attachment device is not adsorbing the adsorbate,
Supports the vacuum sealing member hanging from the vacuum suction
Sometimes the vacuum sealing member comes up easily.
You.
【0027】さらに、微小吸引口をもつ円環などの真空
固定部でウエハ等の吸着物を支える構成であるため、構
造が単純であり、装置構成が簡単にできる等の効果があ
る。 Further, vacuum such as a ring having a minute suction port
Since the fixed part supports the adsorbate such as wafer,
The structure is simple and the device configuration can be simplified.
You.
【図1】本発明の一実施例の真空吸着装置の平面図であ
る。FIG. 1 is a plan view of a vacuum suction device according to an embodiment of the present invention.
【図2】(a)は図1のX−O−Y線断面を示す部分断
面図で、(b)は同(b)のA部の拡大図である。FIG. 2A is a partial cross-sectional view showing a cross section taken along the line XY of FIG. 1, and FIG. 2B is an enlarged view of a portion A in FIG.
【図3】本実施例のポリイミド膜の吸着原理を説明する
部分断面の拡大図である。FIG. 3 is an enlarged partial cross-sectional view illustrating the principle of adsorption of a polyimide film according to the present embodiment.
【図4】本実施例のポリイミド膜の吸着原理を説明する
部分断面の拡大図である。FIG. 4 is an enlarged partial cross-sectional view illustrating the principle of adsorption of a polyimide film according to the present embodiment.
【図5】本実施例のポリイミド膜の効果を説明する部分
断面の拡大図である。FIG. 5 is an enlarged view of a partial cross section for explaining the effect of the polyimide film of the present embodiment.
【図6】本実施例の吸着装置を用いた実験結果で、真空
吸着前の平面度を示すウエハ表面の干渉縞の図である。FIG. 6 is a diagram of interference fringes on the wafer surface showing the flatness before vacuum suction, which is an experimental result using the suction device of the present embodiment.
【図7】本実施例の吸着装置を用いた実験結果で、真空
吸着後の平面度を示すウエハ表面の干渉縞の図である。FIG. 7 is a diagram of interference fringes on the wafer surface showing the flatness after vacuum suction, which is an experimental result using the suction device of the present embodiment.
【図8】本実施例の吸着装置を光波干渉測長機の試料移
動機構に取り付けて、パタン位置の再現性を測定した結
果を示す図である。FIG. 8 is a diagram showing a result of measuring the reproducibility of a pattern position by attaching the adsorption device of the present example to a sample moving mechanism of a light wave interferometer.
【図9】従来の真空吸着装置の平面図である。FIG. 9 is a plan view of a conventional vacuum suction device.
【図10】従来の真空吸着装置の断面図である。FIG. 10 is a sectional view of a conventional vacuum suction device.
10 平板 11 微小吸引口をもつ円環(真空固定部) 12 微小吸引口をもつ円環の縁 13 ポリイミド膜(真空封止部材) 14 排気穴 15 排気用の経路 16 排気口 20 ウエハ 30 ゴミ 40 位置決めピン 50 台座Reference Signs List 10 flat plate 11 ring with minute suction port (vacuum fixing part) 12 edge of ring with minute suction port 13 polyimide film (vacuum sealing member) 14 exhaust hole 15 exhaust path 16 exhaust port 20 wafer 30 dust 40 Positioning pin 50 Base
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭64−5752(JP,A) 実開 昭60−64926(JP,U) 実開 平3−21843(JP,U) 実開 昭62−118443(JP,U) 実開 平1−176924(JP,U) 実開 平2−271518(JP,U) ──────────────────────────────────────────────────続 き Continued on the front page (56) References JP-A-64-5572 (JP, A) JP-A-60-64926 (JP, U) JP-A-3-21843 (JP, U) JP-A 62- 118443 (JP, U) Hikaru Hei 1-176924 (JP, U) Hikaru Hei 2-271518 (JP, U)
Claims (2)
空固定部を設け、 これらの各真空固定部は、 前記真空吸引口が開口する微小円環部と、この微小円環部の上面に中央部が固着されかつ前記真空
吸引口に対応する開口を有し、前記微小円環部の外径よ
り大きい弾性変形可能なシート状の薄膜の 真空封止部材
とによって構成され、前記各真空固定部の周りに前記基体面よりも高くかつ前
記微小円環部の上面より低い台座を設けたこ とを特徴と
する真空吸着装置。The present invention relates to three vacuum cleaners having vacuum suction ports on the surface of a substrate.
An empty fixing portion is provided, and each of these vacuum fixing portions has a minute annular portion in which the vacuum suction port is opened, and a central portion fixed to the upper surface of the minute annular portion and the vacuum portion.
It has an opening corresponding to the suction port and has an outer diameter of the minute annular portion.
Ri is constituted by a vacuum sealing member greater elastically deformable sheet-like thin film, wherein the higher than the substrate surface and before around each vacuum fixing portion
Vacuum suction device which is characterized that you provided the serial lower than the upper surface of the minute circular portion pedestal.
真空封止部材がポリイミドであることを特徴とする真空
吸着装置。 2. The vacuum suction device according to claim 1, wherein said vacuum sealing member is made of polyimide .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10409792A JP2750554B2 (en) | 1992-03-31 | 1992-03-31 | Vacuum suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10409792A JP2750554B2 (en) | 1992-03-31 | 1992-03-31 | Vacuum suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05283511A JPH05283511A (en) | 1993-10-29 |
| JP2750554B2 true JP2750554B2 (en) | 1998-05-13 |
Family
ID=14371619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10409792A Expired - Fee Related JP2750554B2 (en) | 1992-03-31 | 1992-03-31 | Vacuum suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2750554B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100373549B1 (en) * | 2000-11-17 | 2003-02-26 | (주)케이.씨.텍 | Substrate fixing chuck and Substrate treating apparatus mounting the same |
| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| US20040154647A1 (en) * | 2003-02-07 | 2004-08-12 | Supercritical Systems, Inc. | Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing |
| JP2004330417A (en) * | 2003-04-30 | 2004-11-25 | Towa Corp | Board cutting method, board cutting device and board sucking and fixing mechanism |
| JP4411100B2 (en) * | 2004-02-18 | 2010-02-10 | キヤノン株式会社 | Exposure equipment |
| JP4411158B2 (en) * | 2004-07-29 | 2010-02-10 | キヤノン株式会社 | Exposure equipment |
| US7380984B2 (en) | 2005-03-28 | 2008-06-03 | Tokyo Electron Limited | Process flow thermocouple |
| US7494107B2 (en) | 2005-03-30 | 2009-02-24 | Supercritical Systems, Inc. | Gate valve for plus-atmospheric pressure semiconductor process vessels |
| US7352438B2 (en) * | 2006-02-14 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP7178831B2 (en) * | 2018-08-30 | 2022-11-28 | 日本特殊陶業株式会社 | Substrate holding member |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57205728A (en) * | 1981-06-15 | 1982-12-16 | Fujitsu Ltd | Exposure device |
| JPS6064926U (en) * | 1983-10-07 | 1985-05-08 | 富士通株式会社 | Wafer transfer device |
| JPS62118843U (en) * | 1986-01-20 | 1987-07-28 | ||
| JP2501449B2 (en) * | 1987-06-30 | 1996-05-29 | 東京エレクトロン 株式会社 | Adsorption arm |
| JPH01176924U (en) * | 1988-05-31 | 1989-12-18 | ||
| JPH0632673Y2 (en) * | 1988-11-08 | 1994-08-24 | 富士通株式会社 | Resist coating device |
| JPH03145715A (en) * | 1989-10-31 | 1991-06-20 | Sony Corp | Spin-coated film forming device |
| JP3021843U (en) * | 1995-08-23 | 1996-03-12 | ワップ株式会社 | Frozen control ducts for freezers and refrigerators |
-
1992
- 1992-03-31 JP JP10409792A patent/JP2750554B2/en not_active Expired - Fee Related
Also Published As
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