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JP2752890B2 - Wire bonding equipment - Google Patents
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JP2752890B2 - Wire bonding equipment - Google Patents

Wire bonding equipment

Info

Publication number
JP2752890B2
JP2752890B2 JP21936193A JP21936193A JP2752890B2 JP 2752890 B2 JP2752890 B2 JP 2752890B2 JP 21936193 A JP21936193 A JP 21936193A JP 21936193 A JP21936193 A JP 21936193A JP 2752890 B2 JP2752890 B2 JP 2752890B2
Authority
JP
Japan
Prior art keywords
shock wave
bonding
load
ultrasonic
impact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP21936193A
Other languages
Japanese (ja)
Other versions
JPH0774215A (en
Inventor
臣吾 柳原
英治 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21936193A priority Critical patent/JP2752890B2/en
Publication of JPH0774215A publication Critical patent/JPH0774215A/en
Application granted granted Critical
Publication of JP2752890B2 publication Critical patent/JP2752890B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • H10W72/07141Means for applying energy, e.g. ovens or lasers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップに金属細
線を接続するワイヤボンディング装置に関し、特にボン
ディング荷重が正常か否かを検査する機能をもつワイヤ
ボンディング装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for connecting a thin metal wire to a semiconductor chip, and more particularly to a wire bonding apparatus having a function of checking whether a bonding load is normal.

【0002】[0002]

【従来の技術】従来、半導体チップのボンディングパッ
ドとケースのリード部とをワイヤボンディング装置で接
続する場合は、予じめケースに載置された半導体チップ
をワイヤボンディング装置のステージに位置決め固定
し、ワイヤボンディングツールに所定の荷重および速度
と超音波振動をもたせ下降させ、金属細線であるボンデ
ィングワイヤを半導体チップのボンディングパッドに衝
撃力と超音波エネルギーを与え接続していた。
2. Description of the Related Art Conventionally, when a bonding pad of a semiconductor chip and a lead of a case are connected by a wire bonding apparatus, a semiconductor chip mounted on a case is previously positioned and fixed on a stage of the wire bonding apparatus. The wire bonding tool is given a predetermined load, speed and ultrasonic vibration and is lowered to connect the bonding wire, which is a thin metal wire, by applying an impact force and ultrasonic energy to the bonding pad of the semiconductor chip.

【0003】図4は半導体チップにボンディングワイヤ
が接続された状態を示す図である。しかしながら、この
ボンディングワイヤの半導体チップへの接続時に、図4
に示すように、ケース16側の接続には問題とならない
ものの、しばしば、半導体チップ10には亀裂11が生
ずる問題があった。しかも、この亀裂の問題はボンディ
ングツール2に与える動的条件を適切に設定した後にも
かかわらず起きていた。このため、動的条件設定後もボ
ンディングツールに与える荷重および速度ならびに超音
波エネルギーの良否を定期的に検査する必要があった。
FIG. 4 is a diagram showing a state where a bonding wire is connected to a semiconductor chip. However, when this bonding wire is connected to the semiconductor chip, FIG.
As shown in (1), although there is no problem with the connection on the case 16 side, the semiconductor chip 10 often has a problem that a crack 11 is formed. Moreover, the problem of the crack has occurred even after the dynamic conditions given to the bonding tool 2 are appropriately set. For this reason, even after the dynamic conditions are set, it is necessary to periodically inspect the load and speed applied to the bonding tool and the quality of the ultrasonic energy.

【0004】図5は従来のワイヤボンディング装置の一
例における構成を示す図である。そこで、従来のワイヤ
ボンディング装置は、図5に示すように、本体から伸び
るアーム1のボンディングツール2の衝撃力を測定する
衝撃センサ5をステージ4に載置し、この衝撃センサ5
の出力を入力しオッシロスコープ7に衝撃波を描かせる
衝撃力測定器6を設けていた。
FIG. 5 is a diagram showing a configuration of an example of a conventional wire bonding apparatus. Therefore, in the conventional wire bonding apparatus, as shown in FIG. 5, an impact sensor 5 for measuring the impact force of the bonding tool 2 of the arm 1 extending from the main body is mounted on the stage 4, and this impact sensor 5
Was provided and an oscilloscope 7 was provided with an impact force measuring device 6 for drawing a shock wave.

【0005】そして、ボンディングツール2に与える荷
重および下降速度と超音波発振制御部9による超音波エ
ネルギーの設定によりボンディングツール2の動的条件
を設定し、この衝撃力測定装置6で定期的にボンディン
グツール2の衝撃力によって得られる衝撃波を観察し適
切な条件であるか否かで半導体チップの亀裂防止管理を
行なっていた。
[0005] The dynamic conditions of the bonding tool 2 are set by setting the load and the lowering speed applied to the bonding tool 2 and the ultrasonic energy by the ultrasonic oscillation control section 9, and the impact force measuring device 6 periodically performs bonding. The shock wave obtained by the impact force of the tool 2 is observed, and crack prevention management of the semiconductor chip is performed based on whether or not the conditions are appropriate.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上述し
た従来のワイヤボンディング装置では、定期的に衝撃力
をチェックしているにもかかわらず、定期チェックする
間に半導体チップに亀裂が生じ多量の不良品を大量発生
させることがある。また、その原因が何んであるか見極
るにしても時間がかかり多大な工数を浪費する。さら
に、修理調整している間装置は装置が停止しているの
で、装置の稼働率が低下するという問題も含んでいる。
However, in the above-described conventional wire bonding apparatus, although the impact force is periodically checked, a crack occurs in the semiconductor chip during the periodic check and a large number of defective products are generated. May occur in large quantities. Further, even if the cause is determined, it takes a long time and wastes a lot of man-hours. Furthermore, since the apparatus is stopped during the repair adjustment, there is a problem that the operation rate of the apparatus is reduced.

【0007】従って、本発明の目的は、原因を事前に検
知し亀裂の発生を防止し無駄な調整工数を無くすととも
に稼働率の高いワイヤボンディング装置を提供すること
である。
Accordingly, an object of the present invention is to provide a wire bonding apparatus which detects the cause in advance, prevents the occurrence of cracks, eliminates unnecessary adjustment man-hours, and has a high operation rate.

【0008】[0008]

【課題を解決するための手段】本発明の特徴は、ステー
ジに配置された衝撃センサと、この衝撃センサをボンデ
ィングツールで叩くときに生ずる衝撃を検出し衝撃波を
出力する衝撃波出力部と、基準衝撃波を予じめ記憶し該
衝撃波出力部から出力する前記衝撃波と該基準衝撃波と
を比較し波形の違いを出力する比較検出部と、荷重およ
び超音波条件を設定する超音波荷重設定部および超音波
発振制御部と、所定回数のボンディングを行なった後前
記ボンディングツールの前記衝撃センサの叩くことによ
り得られる衝撃波と前記基準衝撃波と比較し違いがあり
かつ前記荷重および超音波条件の設定値にずれが無けれ
ば、前記荷重および超音波条件を許容範囲内で設定し直
し再度前記衝撃センサを叩き得られる衝撃波と前記基準
衝撃波と比較し違いがあるとき警報を発生させる判定手
段とを備えるワイヤボンディング装置である。
SUMMARY OF THE INVENTION The present invention is characterized in that a shock sensor arranged on a stage, a shock wave output section for detecting a shock generated when the shock sensor is hit with a bonding tool and outputting a shock wave, and a reference shock wave. A comparison detection unit that compares the shock wave output from the shock wave output unit with the reference shock wave and outputs a difference in waveform,
Load setting unit and ultrasonic
Before performing a predetermined number of bonding with the oscillation controller
By hitting the impact sensor of the bonding tool
There is a difference between the obtained shock wave and the reference shock wave
And there is no deviation in the set values of the load and ultrasonic conditions
If the load and ultrasonic conditions are set within the allowable range,
The shock wave obtained by hitting the shock sensor again and the reference
Judgment method that generates an alarm when there is a difference compared with the shock wave
And a wire bonding apparatus including a step.

【0009】[0009]

【実施例】次に、本発明について図面を参照して説明す
る。
Next, the present invention will be described with reference to the drawings.

【0010】図1は本発明のワイヤボンディング装置の
一実施例における構成を示す図である。このワイヤボン
ディング装置は、図1に示すように、ステージ4aに配
置される衝撃センサ5からの衝撃信号を入力し衝撃波を
出力する衝撃波出力部12と、基準の衝撃波を予じめ記
憶し衝撃波出力部12から出力する衝撃波と比較し波形
の違いを判定しアラーム部15を動作させる信号を出力
するとともにボンディングツールの荷重および超音波印
加条件の変更を指令する比較検出部13と、この比較検
出部13の指令を入力し超音波発振制御部9および荷重
印加部を制御する荷重・超音波設定部14とを備えてい
る。
FIG. 1 is a diagram showing the configuration of an embodiment of the wire bonding apparatus of the present invention. As shown in FIG. 1, the wire bonding apparatus receives a shock signal from a shock sensor 5 disposed on a stage 4a and outputs a shock wave. The shock wave output unit 12 stores a reference shock wave in advance and outputs a shock wave. A comparison detection unit 13 that compares the shock wave output from the unit 12 to determine a difference in the waveform, outputs a signal for operating the alarm unit 15, and instructs a change in the load of the bonding tool and the ultrasonic application condition; 13 is provided with a load / ultrasonic setting unit 14 for inputting the instruction of 13 and controlling the ultrasonic oscillation control unit 9 and the load applying unit.

【0011】図2は図1のワイヤボンディング装置の動
作を説明するためのフローチャート、図3(a)および
(b)は衝撃波の波形を説明するための波形図およびグ
ラフである。次に、このワイヤボンディング装置の動作
について図1、図2および図3を参照して説明する。ま
ず、図3(a)に示す最も良い条件の基準波形の衝撃力
ピーク値(例えば、30gf以下)と衝撃減衰時間(例
えば、45msec以下)を図1に示す比較検出部13
に記憶させる。次に、この基準波形に対応するボンディ
ングアーム2の荷重・超音波付加条件を設定し、図2の
ステップAでボンディング作業を開始する。
FIG. 2 is a flowchart for explaining the operation of the wire bonding apparatus of FIG. 1, and FIGS. 3A and 3B are a waveform diagram and a graph for explaining the waveform of a shock wave. Next, the operation of the wire bonding apparatus will be described with reference to FIGS. First, the impact detection peak value (for example, 30 gf or less) and the shock decay time (for example, 45 msec or less) of the reference waveform under the best condition shown in FIG.
To memorize. Next, the load / ultrasonic application condition of the bonding arm 2 corresponding to the reference waveform is set, and the bonding operation is started in step A of FIG.

【0012】次に、所定回数の作業に達すると、ステッ
プBでステージ4が移動し、ボンディングアーム2の直
下に衝撃センサ5が位置決めされる。次に、ステップC
でボンディングアーム2が下降し衝撃センサ5を叩く、
これにより衝撃センサ5は信号を発生し衝撃波出力部1
2に入力する。次に、衝撃波出力部12は衝撃波を出力
し比較検出部13に入力する。次に、ステップDで比較
検出部13は予じめ記憶された基準波形と入力した衝撃
波とを比較する。もし、波形に差異が無ければ、ステッ
プAに戻りボンディング作業を続行する。
Next, when the predetermined number of operations has been reached, the stage 4 moves in step B, and the impact sensor 5 is positioned immediately below the bonding arm 2. Next, step C
The bonding arm 2 descends and strikes the impact sensor 5,
Thereby, the shock sensor 5 generates a signal and outputs the shock wave output unit 1.
Enter 2 Next, the shock wave output unit 12 outputs a shock wave and inputs the shock wave to the comparison detection unit 13. Next, in step D, the comparison detection unit 13 compares the previously stored reference waveform with the input shock wave. If there is no difference between the waveforms, the process returns to step A to continue the bonding operation.

【0013】また、ステップDで差異があるときは、ス
テップEで、荷重設定部および超音波発振制御部9の荷
重および超音波条件の設定値を検出し、所定の条件とず
れがないかを検出し、ずれがあれば自動的に設定し直
す。また、ずれがなければ、図3(b)に示す相関条件
の範囲内で荷重条件および超音波条件を自動的に設定し
直す。次に、ステップFでボンディングアーム2で衝撃
センサ5を叩く、ステップGで出力された波形と基準波
形と比較し差異があるか否かを判定する。
If there is a difference in step D, in step E, the set values of the load and the ultrasonic condition of the load setting unit and the ultrasonic oscillation control unit 9 are detected, and it is determined whether there is any deviation from the predetermined condition. Detects and automatically resets any deviation. If there is no deviation, the load condition and the ultrasonic condition are automatically reset within the range of the correlation condition shown in FIG. Next, in step F, the impact sensor 5 is hit with the bonding arm 2, and the waveform output in step G is compared with the reference waveform to determine whether there is a difference.

【0014】ここで、違いが無ければ、ステップAに戻
りボンディング作業を行なう。もし違いがあれば、ステ
ップHでアラーム部15により警報を発するとともに装
置を停止する。
Here, if there is no difference, the process returns to step A to perform the bonding operation. If there is a difference, an alarm is issued by the alarm unit 15 and the apparatus is stopped in step H.

【0015】ここで、この動作における補促説明をする
と、従来、半導体チップの亀裂の発生は、検出される衝
撃波のピーク値と減衰値は、図3(a)に示す基準波形
のピーク値が大きく減衰値が長いときに発生している。
しかしながら、ボンディングツール等の連結部の機械的
な緩みあるいは摩耗などが生ずると、衝撃力の伝達が不
安定になり、ボンディング毎に衝撃力がばらつき、場合
によっては大きな衝撃力が加わり亀裂を起すことが考え
られた。このことを考慮して、まず、接続性能が最も優
れた衝撃エネルギー値を求め、このときに発生する衝撃
波形を基準の波形とし、機械的緩みや摩耗のないとき
に、基準の波形からどの程度の範囲内に違いがあれば、
亀裂を起すことなく接続できるか実験してみて求めてみ
た。その結果、図3(b)に示す衝撃力を決定する荷重
および超音波条件の相関条件範囲内だけに設定を留めれ
ば良いことが判明した。このような実験結果と知見によ
り、ボンディング作業途中においても、ボンディングツ
ールの衝撃力による発生する衝撃波の波形をチェックす
ることにより、最初に設定されたボンディング条件が、
単に条件を補正するだけで適切な条件に設定できるもの
かあるいは修理しない限り修復できないものであるかを
見極めたことである。
Here, a description will be given of the assistance in this operation. Conventionally, the occurrence of cracks in a semiconductor chip is based on the fact that the peak value and attenuation value of a shock wave detected are the peak values of the reference waveform shown in FIG. Occurs when the attenuation value is large and long.
However, mechanical loosening or abrasion of the connection part such as a bonding tool causes the transmission of the impact force to become unstable, and the impact force varies from bonding to bonding, and in some cases, a large impact force is applied to cause cracking. Was thought. In consideration of this, first, the impact energy value with the best connection performance is determined, and the impact waveform generated at this time is used as the reference waveform, and when there is no mechanical loosening or wear, how much from the reference waveform If there is a difference within the range,
I experimented to see if it could be connected without cracking. As a result, it was found that the setting only needs to be kept within the correlation condition range of the load and the ultrasonic condition which determine the impact force shown in FIG. Based on such experimental results and knowledge, even during the bonding operation, by checking the waveform of the shock wave generated by the impact force of the bonding tool, the initially set bonding conditions are:
This is to determine whether the condition can be set to an appropriate condition simply by correcting the condition or cannot be repaired without repair.

【0016】なお、条件設定の補正を必要としないで、
単に、ボンディングアームの機械的緩みあるいはボンデ
ィングツールの摩耗のみをチェックするだけなら、複数
回衝撃センサを叩き、それらの波形にばらつきが有るか
否か見て判定することができる。
It is to be noted that the condition setting does not need to be corrected,
If only the mechanical looseness of the bonding arm or the wear of the bonding tool is simply checked, the impact sensor can be hit a plurality of times, and it can be determined by seeing whether or not there is a variation in the waveforms.

【0017】[0017]

【発明の効果】以上説明したように本発明は、衝撃セン
サをボンディングツールで叩くときに生ずる衝撃を検出
し衝撃波を出力する衝撃波出力部と、基準衝撃波を予じ
め記憶し該衝撃波出力部から出力する前記衝撃波と該基
準衝撃波とを比較し波形の違いを出力しその違いにより
警報を発するかあるいはボンディング荷重および超音波
の条件を補正する比較検出部とを設け、最初の打撃によ
って前記衝撃波出力部が出力する衝撃波の波形と該基準
波形の波形の違いが有るとき、前記ボンディングツール
の打撃エネルギーを変えて該衝撃センサへの次の打撃で
得られる衝撃波と該基準波形との違いが有るときに警報
を発することによって、ボンディングアームおよびボン
ディングツール等の機械的緩みおよび摩耗等によるボン
ディング条件の変動かあるいは単に条件設定のずれによ
る変動かを極めて短時間で見極めることが出来る。
As described above, according to the present invention, a shock wave output section for detecting a shock generated when a shock sensor is hit with a bonding tool and outputting a shock wave, and a shock wave output section for storing and storing a reference shock wave in advance. The shock wave to be output is compared with the reference shock wave, a difference in waveform is output, and a warning is issued based on the difference, or a comparison detection unit that corrects bonding load and ultrasonic conditions is provided. When there is a difference between the waveform of the shock wave output by the unit and the waveform of the reference waveform, when there is a difference between the shock wave obtained by the next impact on the impact sensor by changing the impact energy of the bonding tool and the reference waveform By issuing an alarm to the user, changes in bonding conditions due to mechanical loosening and wear of the bonding arm and bonding tool, etc. Or simply can determine whether variations due to the deviation of the condition setting in a very short time.

【0018】従って、条件変動の原因を事前に検知して
半導体チップの亀裂の発生を防止することが出来る効果
がある。また、条件出しに工数を費やすことが無くなる
ので、装置の稼働率をより高めることが出来るという効
果もある。
Therefore, there is an effect that it is possible to detect the cause of the condition change in advance and prevent the occurrence of cracks in the semiconductor chip. In addition, since there is no need to spend man-hours for setting conditions, there is an effect that the operation rate of the apparatus can be further increased.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のワイヤボンディング装置の一実施例に
おける構成を示す図である。
FIG. 1 is a diagram showing a configuration of a wire bonding apparatus according to an embodiment of the present invention.

【図2】図1のワイヤボンディング装置の動作を説明す
るためのフローチャートである。
FIG. 2 is a flowchart illustrating the operation of the wire bonding apparatus of FIG. 1;

【図3】衝撃波の波形を説明するための波形図およびグ
ラフである。
FIG. 3 is a waveform diagram and a graph for explaining a waveform of a shock wave.

【図4】半導体チップにボンディングワイヤが接続され
た状態を示す図である。
FIG. 4 is a diagram showing a state where a bonding wire is connected to a semiconductor chip.

【図5】従来のワイヤボンディング装置の一例における
構成を示す図である。
FIG. 5 is a diagram showing a configuration of an example of a conventional wire bonding apparatus.

【符号の説明】[Explanation of symbols]

1 ボンディングアーム 2 ボンディングツール 4、4a ステージ 5 衝撃センサ 6 衝撃力測定器 7 オッシロスコープ 9 超音波発振制御部 12 衝撃波出力部 13 比較検出部 14 荷重・超音波設定部 REFERENCE SIGNS LIST 1 bonding arm 2 bonding tool 4, 4 a stage 5 impact sensor 6 impact force measuring device 7 oscilloscope 9 ultrasonic oscillation control unit 12 shock wave output unit 13 comparison detection unit 14 load / ultrasonic setting unit

フロントページの続き (56)参考文献 特開 昭58−164233(JP,A) 実開 平1−112436(JP,U) (58)調査した分野(Int.Cl.6,DB名) H01L 21/607 H01L 21/60 301Continuation of the front page (56) References JP-A-58-164233 (JP, A) JP-A-1-112436 (JP, U) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21 / 607 H01L 21/60 301

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ステージに配置された衝撃センサと、こ
の衝撃センサをボンディングツールで叩くときに生ずる
衝撃を検出し衝撃波を出力する衝撃波出力部と、基準衝
撃波を予じめ記憶し該衝撃波出力部から出力する前記衝
撃波と該基準衝撃波とを比較し波形の違いを出力する比
較検出部と、荷重および超音波条件を設定する超音波荷
重設定部および超音波発振制御部と、所定回数のボンデ
ィングを行なった後前記ボンディングツールの前記衝撃
センサの叩くことにより得られる衝撃波と前記基準衝撃
波と比較し違いがありかつ前記荷重および超音波条件の
設定値にずれが無ければ、前記荷重および超音波条件を
許容範囲内で設定し直し再度前記衝撃センサを叩き得ら
れる衝撃波と前記基準衝撃波と比較し違いがあるとき警
報を発生させる判定手段とを備えることを特徴とするワ
イヤボンディング装置。
An impact sensor arranged on a stage, a shock wave output unit for detecting an impact generated when the impact sensor is hit with a bonding tool and outputting a shock wave, and a shock wave output unit for storing and storing a reference shock wave in advance. The ratio of comparing the shock wave output from the above with the reference shock wave and outputting a difference in waveform
Ultrasonic load for setting the load and ultrasonic conditions
Weight setting unit and ultrasonic oscillation control unit
After bonding, the impact of the bonding tool
Shock wave obtained by tapping the sensor and the reference shock
There is a difference compared to the wave and of the load and ultrasonic conditions
If there is no deviation in the set value, the load and ultrasonic conditions
Set again within the allowable range and hit the impact sensor again.
Warning when there is a difference between the shock wave
A wire bonding apparatus comprising: a determination unit that generates a report .
JP21936193A 1993-09-03 1993-09-03 Wire bonding equipment Expired - Fee Related JP2752890B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21936193A JP2752890B2 (en) 1993-09-03 1993-09-03 Wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21936193A JP2752890B2 (en) 1993-09-03 1993-09-03 Wire bonding equipment

Publications (2)

Publication Number Publication Date
JPH0774215A JPH0774215A (en) 1995-03-17
JP2752890B2 true JP2752890B2 (en) 1998-05-18

Family

ID=16734231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21936193A Expired - Fee Related JP2752890B2 (en) 1993-09-03 1993-09-03 Wire bonding equipment

Country Status (1)

Country Link
JP (1) JP2752890B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859868B (en) * 2023-03-22 2024-10-21 日商新川股份有限公司 Wire bonding device and calibration method of the device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0953398A1 (en) * 1998-02-06 1999-11-03 Esec Sa Process and chip for calibrating a wire bonder
JP4275724B1 (en) 2008-07-16 2009-06-10 株式会社新川 Bonding quality determination method, bonding quality determination device, and bonding apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01112436U (en) * 1988-01-21 1989-07-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI859868B (en) * 2023-03-22 2024-10-21 日商新川股份有限公司 Wire bonding device and calibration method of the device

Also Published As

Publication number Publication date
JPH0774215A (en) 1995-03-17

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