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JP2773526B2 - Manufacturing method of thin film thermistor - Google Patents
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JP2773526B2 - Manufacturing method of thin film thermistor - Google Patents

Manufacturing method of thin film thermistor

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Publication number
JP2773526B2
JP2773526B2 JP4081776A JP8177692A JP2773526B2 JP 2773526 B2 JP2773526 B2 JP 2773526B2 JP 4081776 A JP4081776 A JP 4081776A JP 8177692 A JP8177692 A JP 8177692A JP 2773526 B2 JP2773526 B2 JP 2773526B2
Authority
JP
Japan
Prior art keywords
film thermistor
thin film
insulating support
thin
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4081776A
Other languages
Japanese (ja)
Other versions
JPH05283204A (en
Inventor
彪 長井
勝視 佐々田
貞雄 中川
修治 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP4081776A priority Critical patent/JP2773526B2/en
Publication of JPH05283204A publication Critical patent/JPH05283204A/en
Application granted granted Critical
Publication of JP2773526B2 publication Critical patent/JP2773526B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、薄膜サーミスタ素子の
実装の容易な薄膜サーミスタの製造方法に関する。
The present invention relates to relates easy thin film thermistor manufacturing method of implementation of the thin film thermistor element.

【0002】[0002]

【従来の技術】従来、この種の薄膜サーミスタは、図4
に示すように、平板状アルミナ基板11の一方の表面に
1対の電極膜12a,12bと炭化ケイ素(SiC)な
どの感温抵抗体膜13とから成る素子の1対の電極膜1
2a,12bに白金(Pt)細線(直径0.1mm程度)な
どの1対のリード線4a,4bを接続して薄膜サーミス
タ素子1とし、その薄膜サーミスタ素子1の上に焼成硝
子被覆層5を形成して構成される〔例えば、長井、他
ナショナルテクニカルレポート(National T
echnical Report)Vol.29,(1
983)〕。
2. Description of the Related Art Conventionally, a thin film thermistor of this type has been disclosed in FIG.
As shown in FIG. 2, a pair of electrode films 1 of an element comprising a pair of electrode films 12a and 12b and a temperature-sensitive resistor film 13 such as silicon carbide (SiC) on one surface of a plate-like alumina substrate 11.
A pair of lead wires 4a, 4b such as a thin platinum (Pt) wire (about 0.1 mm in diameter) is connected to 2a, 12b to form a thin-film thermistor element 1. A fired glass coating layer 5 is formed on the thin-film thermistor element 1. Formed and configured [eg, Nagai, etc.
National Technical Report (National T
technical Report) Vol. 29, (1
983)].

【0003】そしてSiCの薄膜サーミスタは耐熱性に
優れ、また広い温度領域を検出するのに適した抵抗温度
特性を有するので、0〜500℃の温度範囲で使用され
る温度センサとしてオーブンなどに実用されている。ま
た1対のリード線2a,2bとして、耐熱性に優れるP
t線、ニッケル(Ni)線が用いられ、その1対のリー
ド線4a,4bは溶接法で1対の電極膜12a,12b
にそれぞれ接続されていた。溶接法による接続は耐熱性
に優れている。
[0003] SiC thin film thermistors have excellent heat resistance and resistance-temperature characteristics suitable for detecting a wide temperature range, so that they are practically used in ovens and the like as temperature sensors used in a temperature range of 0 to 500 ° C. Have been. Further, as a pair of lead wires 2a and 2b, P having excellent heat resistance is used.
A t-line and a nickel (Ni) line are used, and a pair of lead wires 4a and 4b are connected to a pair of electrode films 12a and 12b by welding.
Were connected to each other. The connection by the welding method has excellent heat resistance.

【0004】[0004]

【発明が解決しようとする課題】しかし、この溶接強度
は10g以下と弱く、また、素子は小さい(1.8mm×
6.5mm×0.5mm程度)ので、溶接作業およびそれ以降の
取り扱いに細心の注意を要する。このため多くの作業時
間を必要とし、価格が高くなるという問題があった。
However, the welding strength is as low as 10 g or less, and the element is small (1.8 mm ×
(6.5 mm x 0.5 mm), so careful attention is required for welding work and subsequent handling. For this reason, there has been a problem that much work time is required and the price is high.

【0005】また、焼成硝子被覆層5は1対の電極膜1
2a,12bおよび感温抵抗体膜13を保護すると共に
1対のリード線4a,4bの溶接部も保護する。しか
し、この焼成硝子被覆層5は、平板状アルミナ基板11
の端部まで完全に覆わない場合には結露水が素子表面や
周囲の構成物に付着すると、1対の電極膜12a,12
bとアース間の絶縁性が劣化して、誤動作し易いという
問題があった。
[0005] The fired glass coating layer 5 comprises a pair of electrode films 1.
2a and 12b and the temperature-sensitive resistor film 13 as well as the welded portions of the pair of lead wires 4a and 4b. However, the calcined glass coating layer 5 has a flat alumina substrate 11
If the dew condensation adheres to the surface of the element and the surrounding components when the ends of the electrodes are not completely covered, the pair of electrode films 12a and 12a
There is a problem that insulation between the b and the ground is deteriorated and a malfunction easily occurs.

【0006】本発明は上記従来の問題点を解消するもの
で、取り扱い易く、誤動作しない薄膜サーミスタの製造
方法の提供を目的とする。
[0006] The present invention is intended to solve the above problems, easy to handle, and an object thereof is to provide a method for manufacturing a thin-film thermistor which does not malfunction.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに本発明の薄膜サーミスタの製造方法は、両端の開口
した凹部を1本以上設けた絶縁性支持体の前記凹部に硝
子ペーストまたは有機物接着剤を塗布し、その硝子ペー
ストまたは有機物接着剤の上に素子を配置し、前記硝子
ペーストまたは有機物接着剤を乾燥し、前記素子に1対
のリード線を接続して薄膜サーミスタ素子とし、その薄
膜サーミスタ素子の周囲に硝子ペーストを塗布、乾燥、
焼成する工程を経て製造される。
In order to achieve the above object, a method of manufacturing a thin film thermistor according to the present invention comprises an opening at both ends.
The insulating support provided with one or more recesses formed therein has
Apply glass paste or an organic adhesive, and
Place the element on a glass or organic adhesive, and
The paste or organic adhesive is dried, and one
The thin film thermistor element is connected by connecting the lead wires of
A glass paste is applied around the membrane thermistor element, dried,
It is manufactured through a firing process.

【0008】[0008]

【作用】本発明は上記した製造方法によって、薄膜サー
ミスタ素子より大きな面積の絶縁性支持体を取り扱うこ
とになるとともに、焼成硝子被覆層は薄膜サーミスタ素
子を覆って、さらに絶縁性支持体の表面にまで広がるこ
とになる。
According to the present invention, an insulating support having a larger area than a thin-film thermistor element is handled by the manufacturing method described above, and a fired glass coating layer covers the thin-film thermistor element and further covers the surface of the insulating support. Will spread out.

【0009】[0009]

【実施例】以下、本発明の実施例を添付図面にもとづい
て説明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.

【0010】図1(a)は、本発明の製造方法により作
成された薄膜サーミスタの分解斜視図で、図1(b)
は、直線A−A'で切断したときの断面図である。薄膜
サーミスタ素子1は絶縁性支持体2の上の凹部3に収納
される。このとき凹部3は絶縁性支持体2の端部にまで
伸びており、その両端は開いている。なお図1では、1
対の電極膜12a,12bや感温抵抗体膜13などは省
略してあるが、薄膜サーミスタ素子1は図4に示した構
成である。そして、図1(b)に示すように、焼成硝子
被覆層5が形成される。
FIG. 1 (a) shows a structure manufactured by the manufacturing method of the present invention.
FIG. 1B is an exploded perspective view of the formed thin film thermistor.
Is a sectional view taken along a line AA ′. The thin-film thermistor element 1 is housed in a recess 3 above an insulating support 2. At this time, the recess 3 extends to the end of the insulating support 2, and both ends are open. In FIG. 1, 1
Although the pair of electrode films 12a and 12b and the temperature-sensitive resistor film 13 are omitted, the thin-film thermistor element 1 has the configuration shown in FIG. Then, as shown in FIG. 1B, a fired glass coating layer 5 is formed.

【0011】絶縁性支持体2はアルミナセラミックで構
成され、その形状は8〜10mmの円板状である。また、
凹部3の深さは薄膜サーミスタ素子1の厚さ程度が好ま
しい。この場合絶縁性支持体2は、薄膜サーミスタ素子
1の面積に比べ、4〜6倍の大きな面積を有するので、
取り扱いが容易になることは明らかである。また、この
取り扱いのときに、薄膜サーミスタ素子1をピンセット
などでつかむなどの作業がなくなるので、作業ミスによ
り薄膜サーミスタ素子1の表面を傷付けることなどが防
止できる。焼成硝子被覆層5は、図1(b)に示すよう
に、薄膜サーミスタ素子1を被覆して、絶縁性支持体2
の表面にまで広がるので、薄膜サーミスタ素子1が完全
に焼成硝子被覆層5で被覆されることは明らかである。
The insulating support 2 is made of alumina ceramic and has a disk shape of 8 to 10 mm. Also,
The depth of the recess 3 is preferably about the thickness of the thin film thermistor element 1. In this case, the insulating support 2 has an area that is 4 to 6 times as large as the area of the thin film thermistor element 1.
It is clear that handling is easy. Further, during this handling, work such as grasping the thin film thermistor element 1 with tweezers or the like is eliminated, so that it is possible to prevent the surface of the thin film thermistor element 1 from being damaged due to a work mistake. As shown in FIG. 1B, the fired glass coating layer 5 covers the thin film thermistor element 1 and forms an insulating support 2.
It is clear that the thin film thermistor element 1 is completely covered with the fired glass coating layer 5.

【0012】また、図2に示すように、絶縁性支持体2
の上に2本の凹部3a,3bを設け、互いに交差して配
置することが一層好ましい。その理由は、薄膜サーミス
タ素子1を絶縁性支持体2に収納するときに両者の交差
部が薄膜サーミスタ素子1を挟持する治具の逃げとして
作用するからである。また、焼成硝子被覆層5を形成す
るときも、焼成硝子が薄膜サーミスタ素子1と凹部3a
または3bの間の微小空間に流れ込み易くなるからであ
る。
Further, as shown in FIG.
It is more preferable that two concave portions 3a and 3b are provided on the upper side and are arranged so as to cross each other. The reason is that when the thin-film thermistor element 1 is housed in the insulating support 2, the intersection of the two acts as a relief for a jig holding the thin-film thermistor element 1. Also, when the fired glass coating layer 5 is formed, the fired glass is formed by the thin film thermistor element 1 and the recess 3a.
Alternatively, it is easy to flow into the minute space between 3b.

【0013】前記の薄膜サーミスタをオーブンなどに取
り付ける場合には図3に示すように、薄膜サーミスタを
金属板6と金属部品7aおよび7bからなる金属ケース
8内に固定することが好ましい。固定方法は、同図に示
すように、金属部品7a,7bを用いて、機械的にかし
めてもよいが、絶縁性支持体2と金属板6をろう付け固
定することが好ましい。その理由はろう付け固定すると
薄膜サーミスタと金属板6の間の熱抵抗が、機械的固定
に比べ、小さくなるので、熱応答性が速くなるからであ
る。
When the above-mentioned thin film thermistor is mounted on an oven or the like, it is preferable to fix the thin film thermistor in a metal case 8 composed of a metal plate 6 and metal parts 7a and 7b, as shown in FIG. As shown in the figure, the fixing method may be mechanical caulking using metal parts 7a and 7b, but it is preferable to braze and fix the insulating support 2 and the metal plate 6. The reason is that when brazing is fixed, the thermal resistance between the thin-film thermistor and the metal plate 6 is smaller than that when mechanical fixing is used, so that the thermal response becomes faster.

【0014】次に、前記の薄膜サーミスタを製造すると
き、絶縁性支持体2の凹部3に硝子ペーストを塗布した
後、素子をこの硝子ペーストの上に配置し、乾燥後、1
対のリード線4a,4bを接続することが好ましい。乾
燥した硝子ペーストにより、素子と絶縁性支持体2が軽
く一時的に接着され、この接着力により1対のリード線
4a,4bの接続作業時に素子が固定され、作業が容易
になるからである。素子と絶縁性支持体2が乾燥硝子ペ
ーストで接着されていない場合、素子は凹部3の中で位
置変動を生じ易く、接続作業が難しくなる。1対のリー
ド線4a,4bの接続後、硝子ペーストを薄膜サーミス
タ素子1の周囲に滴下し、乾燥後、焼成すると薄膜サー
ミスタ素子1と絶縁性支持体2は実用上十分な強度で固
着され、本発明の薄膜サーミスタが完成する。なお、上
記説明では、素子と絶縁性支持体2の接着に乾燥硝子ペ
ーストを用いたが、空気中200℃以下で燃焼する有機
物接着剤を用いてもよい。これにより、素子と絶縁性支
持体2が一時的に接着され、1対のリード線4a,4b
の接続作業が容易になる。その後硝子ペーストを薄膜サ
ーミスタ1の周囲に塗布し、硝子ペーストを700℃以
上の高温で焼成する。このときに有機物接着剤は燃焼し
て、外部空間に放散する。この結果、上述したと同様に
薄膜サーミスタ素子1と絶縁性支持体2は実用上十分な
強度で固着される。
Next, when manufacturing the above-mentioned thin film thermistor, after applying a glass paste to the concave portion 3 of the insulating support 2, the element is placed on the glass paste, and after drying, the element is dried.
It is preferable to connect the pair of lead wires 4a and 4b. This is because the element and the insulating support 2 are lightly and temporarily bonded by the dried glass paste, and the bonding force fixes the element when connecting the pair of lead wires 4a and 4b, thereby facilitating the operation. . If the element and the insulating support 2 are not adhered with the dry glass paste, the element is likely to fluctuate in the concave portion 3 and the connection work becomes difficult. After the connection of the pair of lead wires 4a and 4b, a glass paste is dropped around the thin film thermistor element 1, dried, and fired, whereby the thin film thermistor element 1 and the insulating support 2 are fixed with sufficient strength for practical use. The thin film thermistor of the present invention is completed. In the above description, a dry glass paste is used for bonding the element and the insulating support 2, but an organic adhesive that burns in air at 200 ° C. or lower may be used. As a result, the element and the insulating support 2 are temporarily bonded, and the pair of lead wires 4a, 4b
Connection work becomes easier. Thereafter, a glass paste is applied around the thin film thermistor 1, and the glass paste is fired at a high temperature of 700 ° C. or more. At this time, the organic adhesive burns and dissipates in the external space. As a result, as described above, the thin film thermistor element 1 and the insulating support 2 are fixed with practically sufficient strength.

【0015】[0015]

【発明の効果】以上のように本発明によれば、次に示す
効果が得られる。
According to the present invention, the following effects can be obtained.

【0016】(1)薄膜サーミスタ素子は絶縁性支持体
の凹部に収納されるので、それ以降の取り扱いが容易に
なる。
(1) Since the thin-film thermistor element is housed in the concave portion of the insulating support, subsequent handling becomes easy.

【0017】(2)焼成硝子被覆層は薄膜サーミスタ素
子を覆って、さらに絶縁性支持体の表面にまで広がるの
で、絶縁性の劣化による誤動作がなくなる。
(2) Since the fired glass coating layer covers the thin-film thermistor element and further extends to the surface of the insulating support, malfunction due to deterioration of the insulating property is eliminated.

【0018】(3)金属ケース内に収納された薄膜サー
ミスタは取り付けが容易になる。 (4)素子と絶縁性支持体を硝子ペーストまたは有機物
接着剤の上に配置することにより1対のリード線の接続
作業が容易になる。
(3) The thin-film thermistor housed in the metal case is easily mounted. (4) By arranging the element and the insulating support on the glass paste or the organic adhesive, the work of connecting a pair of lead wires becomes easy.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)本発明の製造方法により作成された薄膜
サーミスタの分解斜視図 (b)同じく図1(a)の直線A−A'で切断した断面
FIG. 1A is an exploded perspective view of a thin film thermistor manufactured by the manufacturing method of the present invention. FIG.

【図2】本発明の製造方法により作成された他の薄膜サ
ーミスタの絶縁性支持体の斜視図
FIG. 2 shows another thin film substrate formed by the manufacturing method of the present invention.
Perspective view of the insulating support of the mister

【図3】同薄膜サーミスタの断面図FIG. 3 is a sectional view of the thin film thermistor .

【図4】従来の薄膜サーミスタの断面図FIG. 4 is a cross-sectional view of a conventional thin film thermistor.

【符号の説明】[Explanation of symbols]

1 薄膜サーミスタ素子 2 絶縁性支持体 3 凹部 5 焼成硝子被覆層 DESCRIPTION OF SYMBOLS 1 Thin-film thermistor element 2 Insulating support 3 Depression 5 Fired glass coating layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 修治 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭63−50002(JP,A) 特開 昭59−195803(JP,A) 特開 昭63−120233(JP,A) 特開 昭62−113403(JP,A) 実公 昭32−894(JP,Y1) (58)調査した分野(Int.Cl.6,DB名) H01C 7/02 - 7/22────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shuji Ito 1006 Ojidoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-63-5002 (JP, A) JP-A-59- 195803 (JP, A) JP-A-63-120233 (JP, A) JP-A-62-113403 (JP, A) JP-A 32-894 (JP, Y1) (58) Fields investigated (Int. Cl. 6 , DB name) H01C 7/02-7/22

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】両端の開口した凹部を1以上設けた絶縁
性支持体の前記凹部に硝子ペーストまたは有機物接着剤
を塗布し、その硝子ペーストまたは有機物接着剤の上に
素子を配置し、前記硝子ペーストまたは有機物接着剤を
乾燥し、前記素子に1対のリード線を接続して薄膜サー
ミスタ素子とし、その薄膜サーミスタ素子の周囲に硝子
ペーストを塗布、乾燥、焼成する薄膜サーミスタの製造
方法。
1. A glass paste or an organic adhesive is applied to the concave portion of an insulating support having at least one concave portion opened at both ends, and an element is arranged on the glass paste or the organic adhesive. A method of manufacturing a thin film thermistor, comprising drying a glass paste or an organic adhesive, connecting a pair of leads to the element to form a thin film thermistor element, applying a glass paste around the thin film thermistor element, drying and firing.
JP4081776A 1992-04-03 1992-04-03 Manufacturing method of thin film thermistor Expired - Lifetime JP2773526B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4081776A JP2773526B2 (en) 1992-04-03 1992-04-03 Manufacturing method of thin film thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4081776A JP2773526B2 (en) 1992-04-03 1992-04-03 Manufacturing method of thin film thermistor

Publications (2)

Publication Number Publication Date
JPH05283204A JPH05283204A (en) 1993-10-29
JP2773526B2 true JP2773526B2 (en) 1998-07-09

Family

ID=13755887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4081776A Expired - Lifetime JP2773526B2 (en) 1992-04-03 1992-04-03 Manufacturing method of thin film thermistor

Country Status (1)

Country Link
JP (1) JP2773526B2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195803A (en) * 1983-04-20 1984-11-07 トキコ株式会社 Manufacturing method of thermistor
JPS62113403A (en) * 1985-11-13 1987-05-25 松下電器産業株式会社 Manufacturing method of thin film thermistor
JPS6350002A (en) * 1986-08-20 1988-03-02 松下電器産業株式会社 High temperature thermistor
JPS63120233A (en) * 1986-11-07 1988-05-24 Matsushita Electric Ind Co Ltd Surface temperature sensor

Also Published As

Publication number Publication date
JPH05283204A (en) 1993-10-29

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