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JP2788286B2 - Bilayer film fabrication substrate - Google Patents
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JP2788286B2 - Bilayer film fabrication substrate - Google Patents

Bilayer film fabrication substrate

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Publication number
JP2788286B2
JP2788286B2 JP12831189A JP12831189A JP2788286B2 JP 2788286 B2 JP2788286 B2 JP 2788286B2 JP 12831189 A JP12831189 A JP 12831189A JP 12831189 A JP12831189 A JP 12831189A JP 2788286 B2 JP2788286 B2 JP 2788286B2
Authority
JP
Japan
Prior art keywords
bilayer
bilayer film
small holes
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12831189A
Other languages
Japanese (ja)
Other versions
JPH02305826A (en
Inventor
一 山口
博 中西
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Toshiba Corp
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Toshiba Corp
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Priority to JP12831189A priority Critical patent/JP2788286B2/en
Publication of JPH02305826A publication Critical patent/JPH02305826A/en
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Publication of JP2788286B2 publication Critical patent/JP2788286B2/en
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Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は二分子膜作製基板に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a bilayer film-forming substrate.

(従来の技術) 現在までのところ、シリコンを中心とした半導体技術
によるトランジスタ、IC、LSI、超LSIの開発が行われ、
これによって今日のエレクトロニクスの基礎が築かれて
きた。一方、生命又は生体現象の解明に伴い、生体現象
に特有の考え方に基づいた新規な材料や素子の開発への
期待が高まっている。これは、生体現象を模倣し、情報
処理、認識、記憶などの面でこれまでの考え方と異なる
原理により、エレクトロニクス技術を担うという考え方
に基づいている。
(Prior art) To date, transistors, ICs, LSIs, and ultra LSIs have been developed using silicon-based semiconductor technology.
This has laid the foundation for today's electronics. On the other hand, with the elucidation of life or biological phenomena, expectations for development of new materials and elements based on a concept unique to biological phenomena are increasing. This is based on the idea of imitating biological phenomena and taking on electronics technology based on principles different from the conventional ideas in terms of information processing, recognition, memory, and the like.

ところで、生体機能を発現する場としての生体膜は、
外部からの情報の認識と膜内への伝送、物質の変換、輸
送など種々の重要な役割を果たしている。このため、生
体系を模倣した材料や素子の作製にとって、人工的な膜
の開発が極めて重要である。こうした人工的な膜として
高分子キャスト膜、ラングミュア−ブロジェット(LB)
膜など種々のものが考えられているが、生体膜モデルと
しては二分子膜系が最も生体膜に近い形態である。この
二分子膜は、基板に設けられた小孔にリン脂質などの両
親媒性分子を疎水部のアルキル鎖どうしを向けて二分子
層配列させた超薄膜のことである。
By the way, a biological membrane as a place where biological functions are expressed,
It plays various important roles such as recognition of information from outside and transmission into the membrane, conversion and transport of substances. Therefore, the development of artificial membranes is extremely important for the production of materials and devices that imitate biological systems. As such artificial membrane, polymer cast membrane, Langmuir-Blodgett (LB)
Various types such as membranes have been considered, but as a biological membrane model, a bilayer membrane system is the form closest to the biological membrane. The bilayer is an ultrathin film in which amphipathic molecules such as phospholipids are arranged in bilayers with pores formed in a substrate so that the alkyl chains in the hydrophobic part are directed toward each other.

従来、この二分子膜を作製するための基板としては、
薄いテフロンシートなどに数十〜数百μm程度の小孔を
形成したものが用いられていた。この場合、テフロンシ
ートなどに小孔を形成する方法として、シートを注射針
あるいは高圧放電によって打ち抜く方法がとられていた
(例えば、細胞工学,7,69(1988))。そして、このよ
うな基板を用い、張り合わせ法(モンタール法)や刷毛
塗り法によりその小孔に二分子膜を作製していた。
Conventionally, as a substrate for producing this bilayer film,
A thin Teflon sheet or the like in which small holes of several tens to several hundreds of micrometers are formed has been used. In this case, as a method of forming a small hole in a Teflon sheet or the like, a method of punching the sheet with a syringe needle or high-pressure discharge has been adopted (for example, Cell Engineering, 7 , 69 (1988)). Then, using such a substrate, a bilayer film is formed in the small holes by a laminating method (Montal method) or a brush coating method.

しかしながら、前述した従来の基板では、テフロンシ
ートなどを注射針あるいは高圧放電によって打ち抜いて
小孔を形成しているため、小孔の大きさ、形状の制御が
困難である。また、小孔形成後に小孔の周囲のシート面
が粗くなっているため端面処理を要し、しかも端面処理
を行っても小孔の周囲にシート面が充分滑らかにならな
い。更に、薄いテフロンシートは強度的にも弱い。これ
らの要因はいずれも作製された二分子膜を不安定にする
とともに、二分子膜作製の再現性を悪くする原因となっ
ていた。
However, in the above-described conventional substrate, since the small holes are formed by punching out a Teflon sheet or the like with a syringe needle or high-pressure discharge, it is difficult to control the size and shape of the small holes. In addition, since the sheet surface around the small holes is rough after the small holes are formed, an end face treatment is required, and even if the end surface processing is performed, the sheet surface does not become sufficiently smooth around the small holes. Further, a thin Teflon sheet is weak in strength. All of these factors have made the formed bilayer unstable, and have also caused poor reproducibility of the bilayer preparation.

そこで、貫通された小孔を有し、かつ表面が疎水化さ
れた金属薄板からなる二分子膜作製基板を採用すれば、
前述した問題が解消できる。すなわち、金属薄板を用い
た場合、レーザーなどを利用して熱的に小孔を形成した
り、電解析出法により小孔をパターン化し、適当な方法
でその表面を疎水化することにより、二分子膜作製基板
を製造することができるので、小孔の大きさや形状が制
御され、小孔の周囲の金属薄板面が滑らかで、しかも基
板自体の強度が高い。したがって、このような二分子膜
作製基板を用いれば、従来使用されていたテフロン製の
基板に比べ、安定な二分子膜を再現性よく作製すること
ができる。
Therefore, if a bilayer membrane production substrate made of a thin metal plate having small holes penetrated and having a hydrophobic surface is adopted,
The above-mentioned problem can be solved. That is, when a thin metal plate is used, small holes are formed thermally using a laser or the like, or the small holes are patterned by an electrolytic deposition method, and the surface thereof is made hydrophobic by an appropriate method. Since the molecular film forming substrate can be manufactured, the size and shape of the small holes are controlled, the metal sheet surface around the small holes is smooth, and the strength of the substrate itself is high. Therefore, by using such a bilayer film production substrate, a stable bilayer film can be produced with high reproducibility as compared with a conventionally used Teflon substrate.

ところで、二分子膜を用いて機能素子を開発するに
は、安定でかつ再現性のよい二分子膜を作製できるだけ
でなく、同一基板上に2次元的に配置された2個以上の
小孔に二分子膜を形成し、任意に選択された特定の領域
の二分子膜のみが所定の機能を発現することが必要とな
る。このためには、基板上の2個以上の小孔に形成され
た二分子膜の相互作用を制御することが要望されてい
る。
By the way, in order to develop a functional device using a bilayer film, not only can a stable and reproducible bilayer film be produced, but also two or more small holes two-dimensionally arranged on the same substrate. It is necessary that a bilayer is formed and only the bilayer in a specific region arbitrarily selected exhibits a predetermined function. For this purpose, it is desired to control the interaction of a bilayer film formed in two or more small holes on the substrate.

しかし、本発明者らの研究によれば、2個以上の貫通
された小孔を有し、表面が全て疎水化処理された基板を
用いて二分子膜を作製した場合、各小孔に形成された全
ての二分子膜を構成する分子間には、小孔以外の基板上
に移しとられた単分子膜を介して相互作用が働くことが
判明した。したがって、この場合作製された各二分子膜
間の相互作用を制御することは困難である。このよう
に、現在までのところ、前述した要望を実現することが
できる二分子膜作製基板は知られていない。
However, according to the study of the present inventors, when a bilayer film is formed using a substrate having two or more penetrated pores and the surface of which is all subjected to hydrophobization treatment, it is formed in each pore. It has been found that an interaction between all the molecules constituting the bilayer thus formed works through the monolayer transferred to the substrate except for the pores. Therefore, in this case, it is difficult to control the interaction between the prepared bilayers. As described above, up to now, there has been no known bilayer film-forming substrate capable of realizing the above-mentioned demand.

(発明が解決しようとする課題) 以上のように、従来の二分子膜作製基板では、作製さ
れる二分子膜が不安定であることが多く、再現性も悪
い。また、二分子膜を安定に、かつ再現性よく作製でき
る場合でも、基板の2個以上の小孔に形成された二分子
膜間の相互作用を制御することは困難であった。
(Problems to be Solved by the Invention) As described above, in the conventional bilayer film forming substrate, the bilayer film to be formed is often unstable and the reproducibility is poor. Further, even when a bilayer film can be produced stably and with good reproducibility, it has been difficult to control the interaction between the bilayer films formed in two or more small holes of the substrate.

本発明は前述した問題点を解決するためになされたも
のであり、安定な二分子膜を再現性よく作製することが
でき、しかも2個以上の小孔に形成された二分子膜間の
相互作用を制御することができる二分子膜作製基板を提
供することを目的とする。
The present invention has been made in order to solve the above-mentioned problems, and can produce a stable bilayer film with good reproducibility, and furthermore, has a mutual interaction between the bilayer films formed in two or more small holes. It is an object of the present invention to provide a bilayer film forming substrate capable of controlling the action.

[発明の構成] (課題を解決するための手段) 本発明の二分子膜作製基板は、2個以上の貫通された
小孔を有し、かつ小孔内壁及び小孔周囲の表面が選択的
に疎水化された金属薄板からなることを特徴とするもの
である。
[Constitution of the Invention] (Means for Solving the Problems) The bilayer film forming substrate of the present invention has two or more penetrated small holes, and the inner wall of the small hole and the surface around the small hole are selectively formed. It is characterized by being made of a metal sheet that has been made hydrophobic.

本発明において、金属薄板の材質は特に限定されるも
のではなく、鉄、ニッケル、銅、白金、金、銀、チタン
などの純金属、またはステンレスなどの金属合金など種
々のものを用いることができる。また、その厚さも板と
しての強度を維持できる厚さであればよく、例えば数μ
m〜数百μmの種々のものを用いることができる。
In the present invention, the material of the metal thin plate is not particularly limited, and various materials such as iron, nickel, copper, platinum, gold, silver, a pure metal such as titanium, or a metal alloy such as stainless steel can be used. . The thickness may be any thickness that can maintain the strength as a plate, for example, several μm.
Various types of m to several hundred μm can be used.

本発明において、金属薄板に小孔を形成する方法とし
ては、レーザーなどの利用による熱的な方法、エッチン
グなどの通常の方法のほかに、より制御された形状の小
孔を得るためにレジストを用いたマイクロリソグラフィ
による方法、電解析出法により小孔がパターン化された
金属薄板を析出させる方法なども利用可能である。
In the present invention, as a method of forming small holes in a thin metal plate, a thermal method using a laser or the like, in addition to a normal method such as etching, in addition to a resist to obtain a small hole of a more controlled shape. A method by microlithography used, a method of depositing a metal sheet having small holes patterned by an electrolytic deposition method, and the like can also be used.

本発明において、金属薄板の小孔内壁及び小孔周囲の
表面を選択的に疎水化する方法は、二分子膜を構成する
脂質が膜形成可能なものであれば特に限定されるもので
はない。例えば、ヘキサメチルジシラザン、ヘキサデシ
ルトリクロロシランなどのモノアルキルトリクロロシラ
ン類、ジアルキルジクロロシラン類、トリアルキルモノ
クロロシラン類などによる基板の表面処理や、ステアリ
ン酸カドミウム塩などの単分子膜をLB法によって基板上
に累積する方法などと、金属薄板の所定領域を例えばテ
ープなどでマスキングしたり、フォトリソグラフィによ
り金属薄板の一部に選択的にパターンを形成した後それ
以外の部分を疎水化する方法などとを組合わせる方法が
挙げられる。前述した各種シラン類による表面処理を行
う場合、予め金属薄板表面にSiO2などの膜を形成してお
いてもよい。なお、選択的に疎水化される領域は種々の
パターン形状とすることができる。
In the present invention, the method of selectively hydrophobizing the inner wall of the pores and the surface around the pores of the metal thin plate is not particularly limited as long as the lipid constituting the bilayer membrane can form a membrane. For example, surface treatment of substrates with monoalkyltrichlorosilanes such as hexamethyldisilazane and hexadecyltrichlorosilane, dialkyldichlorosilanes, and trialkylmonochlorosilanes, and monomolecular films such as cadmium stearate by the LB method. A method of accumulating on a substrate, a method of masking a predetermined area of a thin metal sheet with, for example, a tape, or a method of selectively forming a pattern on a part of the thin metal sheet by photolithography and then making the other part hydrophobic. Are combined. When performing the above-described surface treatment with various silanes, a film such as SiO 2 may be formed on the surface of the thin metal plate in advance. The region to be selectively hydrophobized can have various pattern shapes.

以上のような構成の基板に二分子膜を作製する方法と
しては、周知の張り合わせ法(モンタール法)、又は刷
毛塗り法のいずれも用いることができる。
As a method for producing a bilayer film on the substrate having the above-described structure, any of a well-known laminating method (Montal method) and a brush coating method can be used.

(作用) 本発明の二分子膜作製基板は、金属薄板にレーザーな
どを利用して熱的に小孔を形成したり、電解析出法によ
る小孔がパターン化された金属薄板を析出させたものか
らなるので、小孔の大きさや形状が制御され、小孔の周
囲の金属薄板面が滑らかで、しかも基板自体の強度が高
い。したがって、本発明の二分子膜作製基板を用いれ
ば、従来使用されていたテフロン製の基板に比べ、安定
な二分子膜を再現性よく作製することができる。
(Function) The bilayer film forming substrate of the present invention is formed by thermally forming small holes in a thin metal plate by using a laser or the like, or depositing a thin metal plate in which the small holes are patterned by an electrolytic deposition method. Therefore, the size and shape of the small holes are controlled, the surface of the thin metal plate around the small holes is smooth, and the strength of the substrate itself is high. Therefore, by using the bilayer film forming substrate of the present invention, a stable bilayer film can be prepared with high reproducibility as compared with a conventionally used Teflon substrate.

更に、金属薄板に形成された2個以上の貫通された小
孔の内壁及び周囲の表面が選択的に疎水化されており、
疎水化された領域にのみ単分子膜が移しとられるので、
互いに分離されて疎水化された領域の二分子膜間では相
互作用が働かない。また、全ての小孔を数個ずつに区分
してそれらの周囲をそれぞれ選択的にパターン化して疎
水化すれば、1つの疎水化された領域内の二分子膜間で
は相互作用が働くが、その領域と他の領域の二分子膜間
では相互作用が働かないので、二分子膜間の相互作用の
範囲や方向を自由に制御することもできる。
Further, the inner wall and the surrounding surface of two or more through-holes formed in the metal sheet are selectively hydrophobized,
Since the monolayer is transferred only to the hydrophobic area,
There is no interaction between the bilayers in the regions that have been separated and hydrophobized. Also, if all pores are divided into several holes and their surroundings are selectively patterned and hydrophobized, an interaction acts between the bilayers in one hydrophobized region, Since the interaction does not work between the bilayer in the region and the other region, the range and direction of the interaction between the bilayers can be freely controlled.

(実施例) 以下、本発明の実施例を説明する。(Example) Hereinafter, an example of the present invention will be described.

実施例1 以下のようにして、第1図に示す二分子膜作製基板を
作製した。電界析出法により、直径150μmの小孔2が
縦横に形成された厚さ10μmのニッケル薄板1を作製し
た。高周波スパッタ法により、ニッケル薄板1の両面に
厚さ0.3μmのSiO2膜を形成した。このニッケル薄板1
の両面において、各小孔が1個ずつ枡目状に分子される
ように境界領域をマスキングした後、ヘキサメチルジシ
ラジンの気相中で処理して、ニッケル薄板1の両面でマ
スキングされなかった領域の表面を疎水化し(疎水化領
域3)、二分子膜作製基板とした。
Example 1 A bilayer film production substrate shown in FIG. 1 was produced as follows. A nickel thin plate 1 having a thickness of 10 μm in which small holes 2 having a diameter of 150 μm were formed vertically and horizontally by an electric field deposition method. A 0.3 μm thick SiO 2 film was formed on both surfaces of the nickel thin plate 1 by high frequency sputtering. This nickel sheet 1
After masking the boundary region so that each small hole is formed into a mesh shape one by one on both surfaces of the nickel thin plate 1, both surfaces of the nickel thin plate 1 were not masked. The surface of the region was hydrophobized (hydrophobized region 3) to obtain a bilayer film forming substrate.

この二分子膜作製基板を用い、以下のようにして二分
子膜を作製した。29℃の室温下で、15cm×50cmのトラフ
中に純水を満たして24℃に維持し、この純水表面にN−
(7−ニトロベンズ−2−オキサ−1,3−ジアゾール−
4−イル)L−α−ジパルミトイルホスファチジルエタ
ノールアミン(NBD-DPPE)のクロロホルム溶液を展開し
た。溶媒を蒸発させた後、バリアーによって単分子膜を
圧縮し、表面圧を40mN/mとした。前記二分子膜作製基板
をLB法と同じ要領で水面に垂直に浸漬させることによ
り、基板の疎水化領域3に単分子膜を移しとって小孔2
に二分子膜を作製した。
Using this bilayer film production substrate, a bilayer film was produced as follows. At room temperature of 29 ° C., a 15 cm × 50 cm trough is filled with pure water and maintained at 24 ° C., and N-
(7-nitrobenz-2-oxa-1,3-diazole-
4-yl) L-α-dipalmitoyl phosphatidylethanolamine (NBD-DPPE) in chloroform solution was developed. After evaporating the solvent, the monomolecular film was compressed by a barrier to a surface pressure of 40 mN / m. The monolayer was transferred to the hydrophobized region 3 of the substrate by immersing the bilayer-formed substrate perpendicularly to the water surface in the same manner as in the LB method.
A bilayer film was prepared.

水中で二分子膜の透過吸収スペクトルを測定したとこ
ろ、小孔2には安定な二分子膜が形成されており、再現
性も良好であった。また、ニッケル薄板1上に移しとら
れた単分子膜の反射吸収スペクトルを測定したところ、
疎水化領域3にのみ単分子膜が移しとられていた。この
ような二分子膜間には相互作用が働かない。
When the transmission absorption spectrum of the bilayer membrane was measured in water, a stable bilayer membrane was formed in the small holes 2 and the reproducibility was good. When the reflection absorption spectrum of the monomolecular film transferred onto the nickel thin plate 1 was measured,
The monomolecular film was transferred only to the hydrophobic region 3. There is no interaction between such bilayers.

実施例2 以下のようにして、第2図に示す二分子膜作製基板を
作製した。電界析出法により、直径150μmの小孔2が
縦横に形成された厚さ10μmのニッケル薄板1を作製し
た。高周波スパッタ法により、ニッケル薄板1の両面に
厚さ0.3μmのSiO2膜を形成した。このニッケル薄板1
の両面において、それぞれポジ型フォトレジストを塗布
し、露光、現像して、縦1列に配列された複数ずつの小
孔が分離されるようにその境界領域にフォトレジストを
残存させ、ストライプ状のSiO2パターンを露出させた。
ヘキサメチルジシラザンの気相中で処理して、ニッケル
薄板1の両面で露出したストライプ状のSiO2パターンの
表面を疎水化し(疎水化領域4)、二分子膜作製基板と
した。
Example 2 A bilayer film production substrate shown in FIG. 2 was produced as follows. A nickel thin plate 1 having a thickness of 10 μm in which small holes 2 having a diameter of 150 μm were formed vertically and horizontally by an electric field deposition method. A 0.3 μm thick SiO 2 film was formed on both surfaces of the nickel thin plate 1 by high frequency sputtering. This nickel sheet 1
On both sides, a positive type photoresist is applied, exposed and developed, and the photoresist is left in the boundary region so that a plurality of small holes arranged in one vertical line are separated, and a stripe-shaped photoresist is formed. The SiO 2 pattern was exposed.
By treating in a gas phase of hexamethyldisilazane, the surface of the striped SiO 2 pattern exposed on both sides of the nickel thin plate 1 was hydrophobized (hydrophobized region 4) to obtain a bilayer film forming substrate.

この二分子膜作製基板を用い、実施例1と同様にし
て、NBD-DPPEの二分子膜を作製した。
An NBD-DPPE bilayer film was prepared in the same manner as in Example 1 using this bilayer film preparation substrate.

実施例1と同様に、スペクトルを測定したところ、小
孔2には安定で再現性のよい二分子膜が形成され、疎水
化領域4にのみ単分子膜が移しとられていた。このよう
な二分子膜については、1つの疎水化領域4内に含まれ
る二分子膜間には相互作用が働くが、互いに分離された
疎水化領域4の二分子膜間には相互作用が働かない。
The spectrum was measured in the same manner as in Example 1. As a result, a stable and reproducible bilayer film was formed in the small holes 2, and the monolayer film was transferred only to the hydrophobic region 4. In such a bilayer, an interaction acts between the bilayers contained in one hydrophobic region 4, but an interaction acts between the bilayers of the hydrophobic region 4 separated from each other. Absent.

実施例3 以下のようにして、第3図に示す二分子膜作製基板を
作製した。電界析出法により、直径150μmの小孔2が
縦横に形成された厚さ10μmのニッケル薄板1を作製し
た。高周波スパッタ法により、ニッケル薄板1の両面に
厚さ0.3μmのSiO2膜を形成した。このニッケル薄板1
の両面において、それぞれポジ型フォトレジストを塗布
し、露光、現像して、4個ずつの小孔が分離されるよう
にその境界領域にフォトレジストを残存させ、枡目状の
SiO2パターンを露出させた。ヘキサメチルジシラザンの
気相中で処理して、ニッケル薄板1の両面で露出したス
トライプ状のSiO2パターンの表面を疎水化し(疎水化領
域5)、二分子膜作製基板とした。
Example 3 A bilayer film forming substrate shown in FIG. 3 was manufactured as follows. A nickel thin plate 1 having a thickness of 10 μm in which small holes 2 having a diameter of 150 μm were formed vertically and horizontally by an electric field deposition method. A 0.3 μm thick SiO 2 film was formed on both surfaces of the nickel thin plate 1 by high frequency sputtering. This nickel sheet 1
On both sides, a positive photoresist is applied, exposed and developed, and the photoresist is left in the boundary region so that four small holes are separated from each other.
The SiO 2 pattern was exposed. By treating in a gas phase of hexamethyldisilazane, the surface of the striped SiO 2 pattern exposed on both sides of the nickel thin plate 1 was hydrophobized (hydrophobized region 5) to obtain a bilayer film forming substrate.

この二分子膜作製基板を用い、実施例1と同様にし
て、NBD-DPPEの二分子膜を作製した。
An NBD-DPPE bilayer film was prepared in the same manner as in Example 1 using this bilayer film preparation substrate.

実施例1と同様に、スペクトルを測定したところ、小
孔2には安定で再現性のよい二分子膜が形成され、疎水
化領域5にのみ単分子膜が移しとられていた。このよう
な二分子膜については、1つの疎水化領域5内に含まれ
る二分子膜間には相互作用が働くが、互いに分離された
疎水化領域5の二分子膜間には相互作用が働かない。
The spectrum was measured in the same manner as in Example 1. As a result, a stable and reproducible bilayer film was formed in the small holes 2, and the monolayer was transferred only to the hydrophobic region 5. In such a bilayer, an interaction acts between the bilayers included in one hydrophobic region 5, but an interaction acts between the bilayers of the hydrophobic regions 5 separated from each other. Absent.

[発明の効果] 以上詳述したように本発明の二分子膜作製基板を用い
れば、制御された孔径を有し、安定かつ再現性のよい二
分子膜を作製できるうえ、二分子膜間の相互作用を自由
に制御することができる。
[Effects of the Invention] As described in detail above, the use of the bilayer film-forming substrate of the present invention makes it possible to prepare a bilayer film having a controlled pore size, stable and reproducible, Interaction can be controlled freely.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の実施例1における二分子膜作製基板の
部分平面図、第2図は本発明の実施例2における二分子
膜作製基板の部分平面図、第3図は本発明の実施例3に
おける二分子膜作製基板の部分平面図である。 1……ニッケル薄板、2……小孔、3、4、5……疎水
化領域。
FIG. 1 is a partial plan view of a bilayer film forming substrate according to Example 1 of the present invention, FIG. 2 is a partial plan view of a bilayer film forming substrate according to Example 2 of the present invention, and FIG. FIG. 9 is a partial plan view of a bilayer film production substrate in Example 3. 1 ... nickel thin plate, 2 ... small hole, 3, 4, 5 ... hydrophobic area.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】2個以上の貫通された小孔を有し、かつ小
孔内壁及び小孔周囲の表面が選択的に疎水化された金属
薄板からなることを特徴とする二分子膜作製基板。
1. A bilayer membrane production substrate having two or more penetrated small holes, wherein the inner wall of the small holes and the surface around the small holes are made of a metal sheet selectively hydrophobicized. .
JP12831189A 1989-05-22 1989-05-22 Bilayer film fabrication substrate Expired - Lifetime JP2788286B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12831189A JP2788286B2 (en) 1989-05-22 1989-05-22 Bilayer film fabrication substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12831189A JP2788286B2 (en) 1989-05-22 1989-05-22 Bilayer film fabrication substrate

Publications (2)

Publication Number Publication Date
JPH02305826A JPH02305826A (en) 1990-12-19
JP2788286B2 true JP2788286B2 (en) 1998-08-20

Family

ID=14981634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12831189A Expired - Lifetime JP2788286B2 (en) 1989-05-22 1989-05-22 Bilayer film fabrication substrate

Country Status (1)

Country Link
JP (1) JP2788286B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09122510A (en) * 1995-11-02 1997-05-13 Satake Eng Co Ltd Detachment device

Also Published As

Publication number Publication date
JPH02305826A (en) 1990-12-19

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