JP2789395B2 - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JP2789395B2 JP2789395B2 JP3173398A JP17339891A JP2789395B2 JP 2789395 B2 JP2789395 B2 JP 2789395B2 JP 3173398 A JP3173398 A JP 3173398A JP 17339891 A JP17339891 A JP 17339891A JP 2789395 B2 JP2789395 B2 JP 2789395B2
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- point
- bond point
- bonding
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07521—Aligning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
- H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は第1ボンド点と第2ボン
ド点との間をワイヤで接続するワイヤボンデイング方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for connecting a first bond point and a second bond point with a wire.
【0002】[0002]
【従来の技術】IC等の半導体組立装置の製造工程に、
ワイヤボンデイング工程がある。この工程により、図2
にに示すように、ペレット1のパッド(第1ボンド点)
1aとリードフレーム2のリード(第2ボンド点)2a
にワイヤ3が接続される。2. Description of the Related Art In a manufacturing process of a semiconductor assembly device such as an IC,
There is a wire bonding process. By this step, FIG.
As shown in (1), the pad of the pellet 1 (first bonding point)
1a and lead (second bond point) 2a of lead frame 2
Is connected to the wire 3.
【0003】前記ワイヤボンデイング工程におけるワイ
ヤボンデイング方法には、種々の方法が提案されている
が、最も一般的な方法を図3に示す。図3において、ま
ず、(a)に示すように、キヤピラリ4の下端より延在
するワイヤ3に電気トーチ5による火花放電によってボ
ール3aを作る。その後、電気トーチ5は矢印方向へ移
動する。次に(b)に示すように、キヤピラリ4は第1
ボンド点1aの上方に移動する。続いて(c)に示すよ
うに、キヤピラリ4が下降し、ワイヤ3の先端のボール
3aを第1ボンド点1aに接続する。その後、(d)に
示すように、キヤピラリ4は上昇する。続いて(e)に
示すように、キヤピラリ4は第2ボンド点2aの上方に
移動する。次に(f)に示すように、キヤピラリ4が下
降して第2ボンド点2aにワイヤ3を接続する。その
後、キヤピラリ4が一定の位置へ上昇した後、クランパ
6が閉じ、キヤピラリ4とクランパ6が共に上昇して
(g)に示すようにワイヤ3を切断する。これにより、
1本のワイヤ接続が完了する。なお、この種のワイヤボ
ンデイング方法に関連するものとして、例えば特開昭5
7ー87143号公報、特公平1ー26531号公報等
があげられる。Various methods have been proposed as wire bonding methods in the wire bonding step. The most general method is shown in FIG. In FIG. 3, first, as shown in FIG. 3A, a ball 3 a is formed on a wire 3 extending from a lower end of a capillary 4 by spark discharge using an electric torch 5. Thereafter, the electric torch 5 moves in the direction of the arrow. Next, as shown in (b), the capillary 4 is the first
It moves above the bonding point 1a. Subsequently, as shown in (c), the capillary 4 descends and connects the ball 3a at the tip of the wire 3 to the first bond point 1a. Thereafter, as shown in (d), the capillary 4 rises. Subsequently, as shown in (e), the capillary 4 moves above the second bond point 2a. Next, as shown in (f), the capillary 4 descends to connect the wire 3 to the second bond point 2a. Thereafter, after the capillary 4 is raised to a predetermined position, the clamper 6 is closed, and both the capillary 4 and the clamper 6 are raised, and the wire 3 is cut as shown in FIG. This allows
One wire connection is completed. Japanese Patent Application Laid-Open No. Sho 5 (1988) discloses a method related to this type of wire bonding method.
JP-A-7-87143 and JP-B-1-26531.
【0004】[0004]
【発明が解決しようとする課題】上記従来技術は、キヤ
ピラリ4を第1ボンド点1aから第2ボンド点2aに移
動させる距離L1(図4参照)は、第1ボンド点1aと
第2ボンド点2aとを結ぶ距離L0に等しい。ところ
で、第1ボンド点1aへの接続(図3(c)参照)は、
ボール3aがキヤピラリ4の下端の全周によって押し付
けられて行われる。しかし、第2ボンド点2aへの接続
は、図4に示すように、キヤピラリ4の第1ボンド点1
a側の下面によって行われる。このため、従来技術のよ
うにキヤピラリ4を移動させる距離L1を第1ボンド点
1aと第2ボンド点2aの距離L0に等しくすると、ワ
イヤ3は第2ボンド点2aよりΔLだけ第1ボンド点1
a側に接続され、ボンデイング精度が悪い。In the above prior art, the distance L 1 (see FIG. 4 ) for moving the capillary 4 from the first bond point 1a to the second bond point 2a is determined by the distance between the first bond point 1a and the second bond point. equal to the distance L 0 connecting the point 2a. By the way, the connection to the first bond point 1a (see FIG. 3 (c))
The ball 3a is pressed by the entire circumference of the lower end of the capillary 4. However, the connection to the second bond point 2a is made by the first bond point 1 of the capillary 4 as shown in FIG.
This is performed by the lower surface on the a side. Therefore, when equal distances L 1 for moving the capillary 4 as in the prior art the distance L 0 of the first bonding point 1a and the second bonding point 2a, the wire 3 is first bonded only ΔL from the second bonding point 2a Point 1
Connected to a side, poor bonding accuracy.
【0005】本発明の目的は、高精度のボンデイングが
行えるワイヤボンデイング方法を提供することにある。It is an object of the present invention to provide a wire bonding method capable of performing high-precision bonding.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明の構成は、第1ボンド点と第2ボンド点との間
をワイヤで接続するワイヤボンデイング方法において、
キヤピラリを第1ボンド点より第2ボンド点に移動させ
る距離を、キヤピラリの下端外周半径寸法にキヤピラリ
の下端穴半径寸法を加えた長さの半分の長さだけ、第1
ボンド点から第2ボンド点までの距離より多く移動させ
て第2ボンド点にワイヤを接続することを特徴とする。According to a first aspect of the present invention, there is provided a wire bonding method for connecting a first bond point and a second bond point with a wire.
The distance to move the capillary from the first bond point to the second bond point is determined by the radius of the outer circumference of the lower end of the capillary.
The length of the first half of the total length of the bottom hole
The wire is connected to the second bond point by moving the wire more than the distance from the bond point to the second bond point.
【0007】[0007]
【作用】キヤピラリを第1ボンド点から第2ボンド点に
移動させる距離は、キヤピラリの下端外周半径寸法にキ
ヤピラリの下端穴半径寸法を加えた長さの半分の長さだ
け、第1ボンド点から第2ボンド点までの距離より多く
移動させる。これにより、キヤピラリが第2ボンド点上
に移動すると、キヤピラリの第1ボンド点側の下面のボ
ンド面の中心が第2ボンド点に位置する。このため、ボ
ンデイング精度が向上する。The distance by which the capillary is moved from the first bond point to the second bond point is determined by the outer radius of the lower end of the capillary.
It is half the length of the bottom of the capillary plus the radius of the hole
Then , it is moved more than the distance from the first bond point to the second bond point. As a result, when the capillary moves over the second bond point, the center of the bond surface on the lower surface of the capillary on the first bond point side is located at the second bond point. For this reason, the bonding accuracy is improved.
【0008】[0008]
【実施例】以下、本発明の一実施例を図1により説明す
る。キヤピラリ4を第1ボンド点1aから第2ボンド点
2aに移動させてワイヤ3を第2ボンド点2aに接続す
る。この場合、キヤピラリ4を第1ボンド点1aから第
2ボンド点2aに移動させる距離L2は、第1ボンド点
1aから第2ボンド点2aまでの距離L0よりΔL0だ
け長い。ここで、ΔL0は、第2ボンド点2aへのボン
デイング時におけるキヤピラリ4のボンド面のほぼ中心
5からキヤピラリ4の中心6の長さにするか、またはキ
ヤピラリ4の下端外周半径寸法Rよりキヤピラリ4の下
端穴半径寸法rを引いた長さの半分の長さに下端穴半径
寸法rを加えた長さにする。この関係を数式で表すと数
1のようになる。即ち、キヤピラリ4を第1ボンド点1
aから第2ボンド点2aに移動させる距離L 2 は、キヤ
ピラリ4の下端外周半径寸法Rにキヤピラリ4の下端穴
半径寸法rを加えた長さの半分の長さΔL 0 =(R+
r)/2だけ、第1ボンド点1aから第2ボンド点2a
までの距離L 0 より多く移動させる。 An embodiment of the present invention will be described below with reference to FIG. The capillary 4 is moved from the first bond point 1a to the second bond point 2a to connect the wire 3 to the second bond point 2a. In this case, the distance L 2 for moving the capillary 4 to the second bonding point 2a from the first bonding point 1a is longer by [Delta] L 0 from the distance L 0 from the first bonding point 1a to the second bonding point 2a. Here, ΔL 0 is set to be substantially equal to the length of the center 6 of the capillary 4 from the center 5 of the bonding surface of the capillary 4 at the time of bonding to the second bonding point 2 a, or to the length of the outer circumference of the capillary 4. 4 is a length obtained by adding the lower end hole radius dimension r to half the length obtained by subtracting the lower end hole radius dimension r. This relationship can be expressed as a number
It looks like 1. That is, the capillary 4 is moved to the first bond point 1
The distance L 2 is moved from a to second bonding point 2a is Canon
The lower end hole of the capillary 4 is formed at the lower end outer radius radius R of the capillary 4.
Half length ΔL 0 = (R +
r) / 2 from the first bond point 1a to the second bond point 2a
Many move than the distance L 0 up.
【数1】(Equation 1) ΔLΔL 00 =(R−r)/2+r=(R+r)/2= (R−r) / 2 + r = (R + r) / 2
【0009】このように、キヤピラリ4をL2 移動させ
ると、キヤピラリ4のボンド面の中心5は第2ボンド点
2aに一致するので、ボンデイング精度が向上する。な
お、上記実施例は、キヤピラリ4のボンド面が平面の場
合について説明したが、ボンド面が円弧に形成されてい
る場合にも適用できることは勿論である。As described above, when the capillary 4 is moved by L 2 , the center 5 of the bonding surface of the capillary 4 coincides with the second bonding point 2a, so that the bonding accuracy is improved. Although the above embodiment has been described with reference to the case where the bonding surface of the capillary 4 is a plane, it is needless to say that the present invention can be applied to a case where the bonding surface is formed in an arc.
【0010】[0010]
【発明の効果】本発明によれば、キヤピラリを第1ボン
ド点から第2ボンド点に移動させる距離は、キヤピラリ
の下端外周半径寸法にキヤピラリの下端穴半径寸法を加
えた長さの半分の長さだけ、第1ボンド点から第2ボン
ド点までの距離より多く移動させるので、キヤピラリの
第1ボンド点側の下面のボンド面の中心が第2ボンド点
に位置し、ボンデイング精度が向上する。According to the present invention, the distance to move the the capillary from the first bonding point to the second bonding point, the capillary
Add the radius of the bottom edge of the capillary to the radius of the bottom
The capillary is moved by a half of the obtained length more than the distance from the first bonding point to the second bonding point, so that the center of the bonding surface on the lower surface of the capillary on the first bonding point side is located at the second bonding point. The bonding accuracy is improved.
【図1】本発明の一実施例を示す第2ボンド点へのワイ
ヤ接続状態図である。FIG. 1 is a diagram illustrating a wire connection state to a second bond point according to an embodiment of the present invention.
【図2】ワイヤボンデイングされた試料の平面図であ
る。FIG. 2 is a plan view of a wire-bonded sample.
【図3】最も一般的なワイヤボンデイング方法を示し、
(a)乃至(g)は工程図である。FIG. 3 shows the most common wire bonding method,
(A) thru | or (g) are process drawings.
【図4】従来例を示す第2ボンド点へのワイヤ接続状態
図である。FIG. 4 is a diagram showing a conventional example in which a wire is connected to a second bond point.
1a 第1ボンド点 2a 第2ボンド点 3 ワイヤ 4 キヤピラリ 5 キヤピラリのボンド面の中心 6 キヤピラリの中心 L0 第1ボンド点から第2ボンド点までの距離 L2 キヤピラリを移動させる距離 ΔL0 多く移動させる長さ R キヤピラリの下端外周半径寸法 r キヤピラリの下端穴半径寸法1a First bond point 2a Second bond point 3 Wire 4 Capillary 5 Center of bond surface of capillary 6 Center of capillary L 0 Distance from first bond point to second bond point L 2 Distance for moving capillary ΔL 0 Move much The length to be made R The outer radius of the lower end of the capillary r The radius of the lower end of the capillary
Claims (1)
イヤで接続するワイヤボンデイング方法において、キヤ
ピラリを第1ボンド点より第2ボンド点に移動させる距
離を、キヤピラリの下端外周半径寸法にキヤピラリの下
端穴半径寸法を加えた長さの半分の長さだけ、第1ボン
ド点から第2ボンド点までの距離より多く移動させて第
2ボンド点にワイヤを接続することを特徴とするワイヤ
ボンデイング方法。In a wire bonding method for connecting a first bond point and a second bond point with a wire, a distance for moving the capillary from the first bond point to the second bond point is determined by an outer radius of a lower end of the capillary. Under the capillary
A wire bonding method characterized in that the wire is connected to a second bond point by moving the wire by a length that is a half of a length including an end hole radius dimension more than a distance from a first bond point to a second bond point. .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3173398A JP2789395B2 (en) | 1991-06-19 | 1991-06-19 | Wire bonding method |
| KR1019920010573A KR970007598B1 (en) | 1991-06-19 | 1992-06-18 | Method of awire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3173398A JP2789395B2 (en) | 1991-06-19 | 1991-06-19 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04370942A JPH04370942A (en) | 1992-12-24 |
| JP2789395B2 true JP2789395B2 (en) | 1998-08-20 |
Family
ID=15959677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3173398A Expired - Fee Related JP2789395B2 (en) | 1991-06-19 | 1991-06-19 | Wire bonding method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2789395B2 (en) |
| KR (1) | KR970007598B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100479919B1 (en) * | 1997-12-29 | 2005-05-16 | 삼성테크윈 주식회사 | Wire loop generating method of wire bonding head |
| JP4530975B2 (en) | 2005-11-14 | 2010-08-25 | 株式会社新川 | Wire bonding method |
-
1991
- 1991-06-19 JP JP3173398A patent/JP2789395B2/en not_active Expired - Fee Related
-
1992
- 1992-06-18 KR KR1019920010573A patent/KR970007598B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR930001363A (en) | 1993-01-16 |
| KR970007598B1 (en) | 1997-05-13 |
| JPH04370942A (en) | 1992-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5263246A (en) | Bump forming method | |
| JP3333413B2 (en) | Wire bonding method | |
| US20070029367A1 (en) | Semiconductor device | |
| JP3049515B2 (en) | Wire bonding method | |
| JP2789395B2 (en) | Wire bonding method | |
| US5524811A (en) | Wire bonding method | |
| JP2727352B2 (en) | Method for manufacturing leaded semiconductor device | |
| JPS60189940A (en) | Manufacture of resin seal type semiconductor device | |
| JP3522123B2 (en) | Wire bonding method | |
| JPH03289149A (en) | Bonding method of wire | |
| JPH0287637A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPH04255237A (en) | Manufacture of semiconductor device | |
| JP3274661B2 (en) | Semiconductor device | |
| JPH0512855B2 (en) | ||
| JP2665061B2 (en) | Wire bonding method | |
| JPH05326601A (en) | Wire bonding method | |
| JP2912128B2 (en) | Capillary and lead frame and wire bonding method using them | |
| JP2848344B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| JPH06260528A (en) | Semiconductor integrated circuit device | |
| JPH0590320A (en) | Ball-type wire bonding method | |
| KR970004619Y1 (en) | Semiconductor chip | |
| JPH0595074A (en) | Semiconductor device | |
| JPH08195469A (en) | Semiconductor device, manufacturing method thereof, and lead frame | |
| JPH04324948A (en) | Bonding method and tool | |
| JPH01161855A (en) | High frequency semiconductor package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980421 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |