JP2792385B2 - High reflection dielectric mask and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a highly reflective dielectric mask used for transferring a desired pattern by irradiating a surface of a workpiece with a laser beam such as an ultraviolet laser beam, and a method of manufacturing the same. It is about the method.

[0002]

2. Description of the Related Art FIG.
FIG. 5 is a cross-sectional view showing a configuration of a well-known high-reflection dielectric mirror shown in FIG. 5 on April 1, 1991, issued by Kyoritsu Shuppan Co., Ltd. FIG. 6 is a cross-sectional view showing the configuration of the highly reflective dielectric mask of FIG.
FIG. 6 is a view showing a manufacturing process of the high reflection dielectric mask in FIG. In FIG. 4, reference numeral 1 denotes a light-transmitting substrate formed of, for example, quartz or fluorite (CaF ₂ ) that can transmit ultraviolet rays, and 2 denotes, for example, hafnium oxide (HfO ₂ ) or aluminum oxide.
The first dielectric member 3 having a high refractive index such as (Al ₂ O ₃ ) is a second dielectric member having a low refractive index such as silicon oxide (SiO ₂ ). And the second
The dielectric members 2 and 3 are alternately stacked on the translucent substrate 1 to form a dielectric multilayer thin film 4. 5 is a dielectric multilayer thin film 4
Is a highly reflective dielectric mirror configured to be carried by the light transmitting substrate 1.

[0005] In FIG. 5, the same parts as those of the high-reflection dielectric mirror shown in FIG. Reference numeral 6 denotes a plurality of holes which are formed through predetermined positions of the dielectric multilayer thin film 4 to form a desired pattern, and which are highly reflective by the light transmitting substrate 1, the dielectric multilayer thin film 4 and the plurality of holes 6. A dielectric mask 7 is formed.

Next, a method for manufacturing a conventional highly reflective dielectric mask configured as described above will be described with reference to FIG.
First, a photoresist 8 is formed on the translucent substrate 1 as shown in FIG. 6A, and a photomask 9 is placed on the resist 8 as shown in FIG. Then, the resist 8 is irradiated with the electron beam 10 through the photomask 9. At this time, only the portion 8a of the photoresist 8 irradiated with the electron beam 10 is deteriorated as shown in FIG.

Next, as shown in FIG. 6D, the remaining portion 8b other than the altered portion 8a is removed by etching to form a pattern while leaving only the altered portion 8a. Then, after forming the dielectric multilayer thin film 4 on the pattern formed by the altered portion 8a as shown in FIG. 6E, finally, the altered portion 8a and this portion 8a
6F, a desired pattern is formed by providing a plurality of holes as shown in FIG. 6F to complete the high-reflection dielectric mask 7. .

[0006] Since ultraviolet laser light has a high photon cost, a mask used for transferring a desired pattern onto the surface of a workpiece by irradiating the ultraviolet laser light has a dielectric and extremely high dielectric strength. Fig. 7
As shown in FIG.
Of the ultraviolet laser light 13 incident on the surface of the mask 12
The emitted light 13a is transmitted to the surface of the mask 12 and the reflecting mirror 1
8 and multiple reflections for effective use. For this reason, a mask patterned with high reflectivity, that is, a highly reflective dielectric mask 7 is increasingly required. Reference numeral 14 denotes a lens, and reference numeral 15 denotes a workpiece.

[0007]

The conventional highly reflective dielectric mask is constructed and manufactured as described above. After forming the dielectric multilayer thin film 4, it is immersed in an etching solution together with the light-transmitting substrate 1. Laser etching of the dielectric multilayer thin film 4 may be reduced to almost half of the initial value, and as a result, the reflectance of the surface of the high-reflection dielectric mask 7 is reduced or the thin film is damaged. For example, there is a problem that the function is reduced and the life is shortened.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a highly reflective dielectric mask capable of preventing a decrease in function and a shortened life and a method of manufacturing the same. It is intended for.

[0009]

According to a first aspect of the present invention, there is provided a high-reflection dielectric mask comprising first and second reflective masks each having a different refractive index.
A dielectric multilayer thin film formed by alternately stacking a plurality of dielectric members and a second dielectric member; a light-transmitting substrate carrying the dielectric multilayer thin film and transmitting laser light; A dielectric thin film formed of a third dielectric member having a lower laser resistance than both dielectric members interposed between the optical substrate and the dielectric member forming the dielectric multilayer thin film; and a dielectric multilayer thin film and a dielectric thin film. And a plurality of holes formed therethrough and arranged in a predetermined pattern.

In the high-reflection dielectric mask according to a second aspect of the present invention, the first dielectric member is formed of hafnium oxide (H).
fO ₂ ) or aluminum oxide (Al ₂ O ₃ )
The dielectric member is made of silicon oxide (SiO ₂ ), and the third dielectric member is made of zirconium oxide (ZrO ₂ ).

In the high-reflection dielectric mask according to a third aspect of the present invention, the third dielectric member is made of the same material as the first dielectric member having the larger refractive index. The laser proof strength is made lower than the laser proof strength of the first dielectric member by adjusting the conditions at the time.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a highly reflective dielectric mask, comprising the steps of: forming a dielectric thin film made of a third dielectric member on a transparent substrate capable of transmitting laser light. Forming a dielectric multilayer thin film by alternately stacking first and second dielectric members having different refractive indexes on the dielectric thin film; and forming a light-transmitting substrate through the opening of the pinhole plate. A laser is irradiated from the side to form an image of the opening in the dielectric thin film, and the energy density at the image forming point is lower than the laser proof strength of the first and second dielectric members and higher than the laser proof strength of the third dielectric member. Adjusting and removing the dielectric thin film and the dielectric multilayer thin film so as to penetrate predetermined portions to form a plurality of holes, thereby forming a desired pattern.

[0013]

According to the first aspect of the present invention, the dielectric thin film of the highly reflective dielectric mask receives laser damage due to the image formation of laser light transmitted through the light-transmitting substrate and is abraded. portion receiving the laser damage by (photolysis removal) phenomenon, stacked dielectric multilayer thin film of the record in its upper
The part corresponding to the damaged part is removed together.

Further, the dielectric thin film formed of zirconium oxide of the high-reflection dielectric mask according to claim 2 of the present invention suffers laser damage by the irradiated laser light,
The portions damaged by the laser due to the ablation phenomenon are removed together with the portions corresponding to the laser-damaged portions of the dielectric multilayer thin film composed of a thin film of hafnium oxide and silicon oxide stacked thereon. Is done.

[0015] The dielectric thin film of high reflection dielectric mask in claim 3 of the present invention is the condition adjustment during formation
The laser proof strength is made lower than the laser proof strength of the dielectric member having the larger refractive index of the dielectric multilayer thin film made of the same material.

In the method of manufacturing a highly reflective dielectric mask according to a fourth aspect of the present invention, a laser is irradiated from the light transmitting substrate side through the opening of the pinhole plate to form an image in the dielectric thin film. Together with the energy density at the imaging point
And lower than the laser proof stress of the second dielectric member and the third dielectric member.
By forming a plurality of holes by adjusting the dielectric strength of the dielectric member to be higher than the laser proof strength and penetrating a predetermined portion of the dielectric thin film and the dielectric multilayer thin film, a desired pattern can be formed without performing etching. Can be formed.

[0017]

[Embodiment 1] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a configuration of a highly reflective dielectric mask according to Embodiment 1 of the present invention. In the figure, parts similar to those of the related art are denoted by the same reference numerals, and description thereof is omitted. Reference numeral 16 denotes a dielectric thin film interposed between the dielectric multilayer thin film 4 formed by alternately stacking the first and second dielectric members 2 and 3 and the light-transmitting substrate 1, for example, an oxidized film. Zirconium (ZrO ₂ )
The third dielectric member has a lower laser proof strength than the first and second dielectric members. Reference numeral 17 denotes a plurality of holes for forming a desired pattern by penetrating the dielectric thin film 16 and the dielectric multilayer thin film 4 at predetermined positions, and the transparent substrate 1, the dielectric thin film 16, and the dielectric multilayer thin film. A highly reflective dielectric mask 20 with four and a plurality of holes 17;
Is composed.

Next, a method of manufacturing the high-reflection dielectric mask according to the first embodiment configured as described above will be described. First, as shown in FIG. 1, zirconium oxide (Zr) as a third dielectric member having a higher laser proof strength than the ultraviolet laser light actually used is formed on the surface of the translucent substrate 1.
O ₂ ) is applied with an optical film thickness of approximately 波長 wavelength of the used laser wavelength to form the dielectric thin film 16. Next, hafnium oxide (HfO ₂ ) as the first dielectric member 2 having a high refractive index and silicon oxide (SiO ₂ ) as the second dielectric member 3 having a low refractive index are formed on the dielectric thin film 16. Are alternately deposited in an optical film thickness of approximately 波長 wavelength of the used laser wavelength in a stack of several tens of layers to form a dielectric multilayer thin film 4.
At this stage, a mirror corresponding to the high-reflection dielectric mirror 5 described in the section of the related art is configured.

Next, as shown in FIG. 2, the pinhole plate 23 is irradiated with an ultraviolet laser beam 22 output from an excimer laser oscillator 21. And this pinhole plate 2
3 of the ultraviolet laser beam 22 having passed through the opening 23a, through the light transmitting substrate 1 by Koyuizo lens 25 is reflected by the bend mirror 24 is irradiated to the dielectric thin film 16, the pin in the dielectric thin film 16 The opening 23a of the hole plate 23 is imaged.

At this time, the zirconium oxide as the third dielectric member forming the dielectric thin film 16 is made of hafnium oxide as the first dielectric member 2 forming the dielectric multilayer thin film 4 and having a high refractive index. Because of the large light absorption, this imaged part has an instantaneous order of nanoseconds (nsec).
The laser-damaged portion of the dielectric thin film 16 and the portion of the dielectric multilayer thin film 4 corresponding to the laser-damaged portion are removed from the light-transmitting substrate 1 by the ablation phenomenon. Is formed.
Then, by repeating such an operation, a plurality of holes 17 are formed at predetermined positions, a desired pattern is formed, and the high-reflection dielectric mask 20 is completed.

According to the first embodiment, among the members forming the dielectric multilayer thin film 4 between the translucent substrate 1 and the dielectric multilayer thin film 4, the first dielectric having the higher refractive index is used. From member 2
A dielectric thin film 16 having a low laser proof stress is formed, and the dielectric thin film 16 is irradiated with an ultraviolet laser beam 22 through an opening 23a of a pinhole plate 23 to form an image on the opening 23a. The laser-damaged portion of the dielectric thin film 16 and the part of the dielectric multilayer thin film 4 corresponding to this portion are subjected to laser damage by the ablation phenomenon.
Since a plurality of holes 17 are formed by peeling from the substrate to form a pattern, there is no need to perform etching, and the laser proof strength of the dielectric multilayer thin film 4 does not decrease.

Embodiment 2 FIG. According to the first embodiment, the first and second dielectric members 2 and 3 constituting the dielectric multilayer thin film 4 are alternately stacked at an optical film thickness by about １ ／ wavelength of the used laser wavelength. By weighing, the theoretical reflectance is at its highest,
The optical thickness of the first and second dielectric members 2 and 3 is reduced to 1/4
By slightly deviating from the wavelength, it is possible to obtain the effect that the electric field intensity can be reduced without substantially reducing the practical reflectance.

Embodiment 3 FIG. Further, in the second embodiment, in order to reduce the electric field strength, the first
Also, the case where the optical film thickness of the second dielectric members 2 and 3 is slightly shifted from 波長 wavelength has been described, but the uppermost layer of the dielectric multilayer thin film 4 has a low refractive index such as silicon oxide. the rate of material, this is half wavelength formed by the optical film thickness
This makes it possible to improve the laser proof stress .

Embodiment 4 FIG. Furthermore, according to the first embodiment, as shown in FIG. 2, the ultraviolet laser light 22 is once reflected by the bend mirror 24, and then guided to the dielectric thin film 16 via the imaging lens 25. Needless to say, the same effect as in the first embodiment can be obtained even if the structure is adopted in which the light is guided directly without passing through the bend mirror 24.

Embodiment 5 FIG. FIG. 3 is a sectional view showing a configuration of a high-reflection dielectric mask according to Embodiment 5 of the present invention. In the figure, the same parts as those in the first embodiment shown in FIG. Reference numeral 26 denotes a dielectric thin film interposed between the light-transmitting substrate 1 and the dielectric multilayer thin film 4, and is the same as the first dielectric member having a high refractive index among the members forming the dielectric multilayer thin film 4. The first member constituting the dielectric multilayer thin film 4 is made of a material member.
The second dielectric portions 2 and 3 are both formed by vacuum evaporation. By changing the conditions at the time of vacuum deposition, for example, the temperature of the translucent substrate 1, the deposition rate, and the like, the laser
The proof strength is adjusted to be lower than at least the laser proof strength of the first dielectric member 2.

According to the fifth embodiment, since the dielectric member forming the dielectric thin film 26 is made of the same material as the first dielectric member 2, the same effects as those of the above-described embodiments can be obtained. Needless to say, the first and second members need not be separately used to form the dielectric thin film 26.
It is sufficient to prepare two types of dielectric members 2 and 3, and an effect that a series of operations from preparation for vapor deposition to completion of vapor deposition is simplified.

Embodiment 6 FIG. In the first embodiment, the ultraviolet laser light 22 is used to form an image of the opening 23a of the pinhole plate 23 in the dielectric thin film 16. However, the present invention is not limited to this, and another laser light may be used. However, it goes without saying that the same effect as in the first embodiment is obtained.

[0028]

As described above, according to the first aspect of the present invention, there is provided a dielectric multilayer thin film formed by alternately stacking first and second dielectric members having different refractive indexes. dielectric and multi-layered thin film permeable to carrying and laser light a light-transmitting substrate, the laser-resistant from both the dielectric member to form a dielectric multilayer film interposed between the dielectric multilayer film and the transparent substrate
A dielectric thin film formed of a third dielectric member having low force ;
With a plurality of holes formed through the dielectric multilayer thin film and the dielectric thin film and arranged in a predetermined pattern,

According to a second aspect of the present invention, hafnium oxide (HfO ₂ ) or aluminum oxide (Al ₂ O ₃ ) is used for the first dielectric member, and silicon oxide is used for the second dielectric member. (SiO ₂ ) and zirconium oxide (ZrO ₂ ) for the third dielectric member, respectively.

According to a third aspect of the present invention, the third dielectric member is made of the same material as that of the first dielectric member having the larger refractive index, and the laser is adjusted by adjusting the conditions at the time of formation. The proof strength is made lower than the laser proof strength of the first dielectric member,

According to a fourth aspect of the present invention, a step of forming a dielectric thin film made of a third dielectric member on a translucent substrate capable of transmitting a laser beam, and a step of forming a dielectric thin film on the dielectric thin film, respectively. Forming a dielectric multilayer thin film by alternately stacking first and second dielectric members having different ratios, and irradiating a laser from a light transmitting substrate side through an opening of a pinhole plate to form a dielectric thin film. dielectric thin film and dielectric to adjust the energy density higher than laser damage threshold of and lower than the laser damage threshold of the first and second dielectric members third dielectric member at the imaging point along with images the aperture within Forming a desired pattern by forming a plurality of holes by removing a predetermined portion of the multilayer thin film so as to penetrate the multilayer thin film. A reflective dielectric mask and It is possible to provide a method of manufacturing.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a highly reflective dielectric mask according to a first embodiment of the present invention.

FIG. 2 is a view showing a process of forming a plurality of holes of the high reflection dielectric mask in FIG.

FIG. 3 is a cross-sectional view illustrating a configuration of a high-reflection dielectric mask according to a fifth embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a configuration of a generally used high reflection dielectric mirror.

FIG. 5 is a cross-sectional view showing a configuration of a conventional high-reflection dielectric mask formed by applying the high-reflection dielectric mirror shown in FIG.

FIG. 6 is a view illustrating a manufacturing process of the high-reflection dielectric mask illustrated in FIG. 5;

FIG. 7 is a diagram illustrating a general configuration in which a mask and a mirror are used in combination to irradiate the surface of a workpiece with ultraviolet laser light for effective use.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 translucent substrate, 2 first dielectric member, 3 second dielectric member, 4 dielectric multilayer thin film, 6, 17, 27 holes,
7, 20, 30 High reflection dielectric mask, 16, 26 Dielectric thin film.

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Toshinori Yagi 8-1-1, Tsukaguchi-Honmachi, Amagasaki-shi Mitsubishi Electric Corp. Production Technology Laboratory (56) References JP-A-4-309952 (JP, A) Kaihei 1-243062 (JP, A) Institute of Electrical and Electronics Engineers, Photon and Quantum Device Research Group, OQD-95-6, (1995), PP. 47-55 (58) Fields studied (Int. Cl. ⁶ , DB (Name) H01L 21/027 G03F 1/08

Claims (4)

(57) [Claims] 1. A first and a second, each having a different refractive index.
A dielectric multilayer thin film formed by alternately stacking the above dielectric members, a light-transmitting substrate carrying the dielectric multilayer thin film and transmitting laser light, the dielectric multilayer thin film and the light transmitting A dielectric thin film formed of a third dielectric member having lower laser resistance than both dielectric members interposed between the conductive substrate and the dielectric multilayer thin film, forming the dielectric multilayer thin film, the dielectric multilayer thin film, and the dielectric A highly reflective dielectric mask comprising a plurality of holes formed through a thin film and arranged in a predetermined pattern. 2. The first dielectric member is made of hafnium oxide (HfO ₂ ) or aluminum oxide (Al ₂ O ₃ ) .
Silicon oxide (SiO ₂ ) is used for the second dielectric member,
_2. The highly reflective dielectric mask according to claim 1, wherein zirconium oxide (ZrO2) is used for each of said dielectric members. 3. The third dielectric member is made of the same material as that of the first dielectric member having the larger refractive index, and the laser proof stress is reduced by adjusting the conditions at the time of formation. 2. The highly reflective dielectric mask according to claim 1, wherein the dielectric strength is lower than a laser proof stress . 4. A step of forming a dielectric thin film made of a third dielectric member on a light-transmitting substrate capable of transmitting a laser beam, and forming a first and second dielectric films having different refractive indexes on the dielectric thin film. Forming a dielectric multilayer thin film by alternately stacking the dielectric members of the above, and irradiating a laser from the transparent substrate side through the opening of the pinhole plate to form the opening in the dielectric thin film. the dielectric thin film and the dielectric multilayer adjusted higher than the laser strength of and the third dielectric member, the energy density lower than the laser damage threshold of the first and second dielectric members in the image forming point as well as the image Forming a desired pattern by forming a plurality of holes by removing a predetermined portion of the thin film so as to penetrate the thin film.