JP2799994B2 - X-ray detector - Google Patents
X-ray detectorInfo
- Publication number
- JP2799994B2 JP2799994B2 JP63149516A JP14951688A JP2799994B2 JP 2799994 B2 JP2799994 B2 JP 2799994B2 JP 63149516 A JP63149516 A JP 63149516A JP 14951688 A JP14951688 A JP 14951688A JP 2799994 B2 JP2799994 B2 JP 2799994B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- rays
- sample
- semiconductor
- ray detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 23
- 238000005259 measurement Methods 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 7
- 238000002083 X-ray spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010206 sensitivity analysis Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体Ｘ線検出器を備えたＸ線検出装置に
関する。Description: TECHNICAL FIELD The present invention relates to an X-ray detection device provided with a semiconductor X-ray detector.
従来、半導体検出器（例えばSi（Li）検出器）を備え
たＸ線検出装置においては、第２図に示すように、Ｘ線
源（図外）からのＸ線（一次Ｘ線）20をコリメータ等の
Ｘ線ガイド体21によりガイドして試料22の表面22Aに照
射し、この表面22Aから発せられる二次Ｘ線（ここで云
う二次Ｘ線とは、螢光Ｘ線、回折Ｘ線、コンプトン散乱
Ｘ線を総称したものである）23が半導体検出器24に入射
するように（即ち、図中の角度θ１が角度θ２と等しく
なるように）構成しているが、このように構成した場
合、二次Ｘ線23が照射点から全方位に散乱するため、半
導体検出器24に捕捉される二次Ｘ線23が少なく、余り感
度よく測定することができない。2. Description of the Related Art Conventionally, in an X-ray detection apparatus provided with a semiconductor detector (for example, a Si (Li) detector), as shown in FIG. 2, an X-ray (primary X-ray) 20 from an X-ray source (not shown) is used. A surface 22A of a sample 22 is irradiated by being guided by an X-ray guide body 21 such as a collimator, and secondary X-rays emitted from the surface 22A (the secondary X-rays here are fluorescent X-rays, diffraction X-rays). , Which is a general term for Compton scattered X-rays) (that is, so that the angle θ 1 in the figure is equal to the angle θ 2 ). In this case, since the secondary X-rays 23 are scattered in all directions from the irradiation point, the number of the secondary X-rays 23 captured by the semiconductor detector 24 is small, and the measurement cannot be performed with high sensitivity.
そこで、半導体検出器24のＸ線入射窓24Aを大きくし
たり、複数の半導体検出器24を設けたり、或いは、一系
統のクライオスタットのコールドフィンガー尖端部に複
数の半導体検出器24を固定することが行われている。Therefore, it is necessary to enlarge the X-ray incident window 24A of the semiconductor detector 24, provide a plurality of semiconductor detectors 24, or fix the plurality of semiconductor detectors 24 to the tip of the cold finger of one cryostat. Is being done.
しかしながら、このように構成しても次のような問題
点がある。即ち、 螢光Ｘ線の計測においては、単にＸ線入射窓の面積
を大きくしたり、或いは検出器の数を増加しても、その
大型化のために試料と検出器との間の距離が増大し、結
局、有効検出立体角を大きくすることができないため、
大幅な感度向上は期待できない。However, this configuration still has the following problems. That is, in the measurement of fluorescent X-rays, even if the area of the X-ray entrance window is simply increased or the number of detectors is increased, the distance between the sample and the detector is increased due to the increase in size. Increase, and eventually the effective solid angle cannot be increased.
Significant sensitivity improvement cannot be expected.
回折Ｘ線の計測においては、回折Ｘ線がリング状で
ある場合や斑点形状になる場合、その一部だけを計測す
ることになり、測定の感度向上が機体できないと共に、
正確な強度測定を行えない。In the measurement of diffracted X-rays, if the diffracted X-rays are ring-shaped or spot-shaped, only a part of them will be measured, and the measurement sensitivity cannot be improved,
Accurate strength measurement cannot be performed.
コンプトン散乱Ｘ線のスペクトル計測においては、
散乱角範囲が大きくなるため、検出エネルギースペクト
ル分布を正確に測定できなくなる。In Compton scattering X-ray spectrum measurement,
Since the scattering angle range is large, the detected energy spectrum distribution cannot be measured accurately.
本発明は、上述の事柄に留意してなされたもので、そ
の目的とするところは、上記問題点を悉く解決し、螢光
Ｘ線，回折Ｘ線、コンプトン散乱Ｘ線のスペクトル計測
をそれぞれ精度よく行うことができるＸ線検出装置を提
供することにある。The present invention has been made in consideration of the above-mentioned matters, and aims at solving all of the above-mentioned problems and accurately measuring the spectra of fluorescent X-rays, diffraction X-rays, and Compton scattered X-rays. An object of the present invention is to provide an X-ray detection device that can perform well.
上述の目的を達成するため、本発明に係るＸ線検出装
置は、Ｘ線源からの一次Ｘ線を試料に対して照射し、こ
の試料から発せられる螢光Ｘ線、回折Ｘ線、コンプトン
散乱Ｘ線を一つの半導体Ｘ線検出器によって検出するよ
うにしたＸ線検出装置であって、前記半導体Ｘ線検出器
を軸中空構造に形成してそのＸ線入射窓をリング状に形
成すると共に、前記半導体Ｘ線検出器の中空部に挿通さ
れ、かつ、内壁面がＸ線源からのＸ線を全反射するＸ線
ガイド体を経てＸ線が大気中の試料に対して照射され、
かつ前記Ｘ線ガイド体の端面と試料との距離を任意に設
定可能としたことを特徴とする。To achieve the above object, an X-ray detection apparatus according to the present invention irradiates a sample with primary X-rays from an X-ray source, and emits fluorescent X-rays, diffracted X-rays, and Compton scattering emitted from the sample. What is claimed is: 1. An X-ray detection apparatus wherein an X-ray is detected by a single semiconductor X-ray detector, wherein said semiconductor X-ray detector is formed in a hollow shaft structure, and an X-ray incident window is formed in a ring shape. X-rays are applied to the sample in the atmosphere through an X-ray guide body that is inserted into the hollow portion of the semiconductor X-ray detector and whose inner wall surface totally reflects X-rays from the X-ray source,
The distance between the end face of the X-ray guide body and the sample can be set arbitrarily.
上記構成によれば、螢光Ｘ線の計測においては、有効
検出立体角を大きくすることができるので、検出感度を
大幅に向上させることができる。そして、回折Ｘ線の計
測においては、一次Ｘ線を中心とする軸対称にＸ線を計
測することができるので、回折Ｘ線がリング状である場
合や斑点形状になる場合においても、その一部だけを計
測するのではなく、例えば一定の回折角の回折Ｘ線の全
てを捕捉できることになり、正確かつ感度よく計測を行
うことができる。又、コンプトン散乱Ｘ線のスペクトル
計測においては、一定の散乱角が得られるので精密なエ
ネルギースペクトルの測定を行うことができ、しかも、
有効検出立体角を大きくすることができるので感度が向
上し、従って、上記目的は完全に達成される。According to the above configuration, in the measurement of the fluorescent X-ray, the effective detection solid angle can be increased, so that the detection sensitivity can be greatly improved. In the measurement of the diffracted X-ray, the X-ray can be measured axially symmetric with respect to the primary X-ray. Instead of measuring only the portion, for example, all of the diffracted X-rays having a certain diffraction angle can be captured, and the measurement can be performed accurately and with high sensitivity. In the Compton scattered X-ray spectrum measurement, a constant scattering angle can be obtained, so that a precise energy spectrum can be measured.
Since the effective detection solid angle can be increased, the sensitivity is improved, and the above object is completely achieved.
本発明は、軸中空構造に形成してそのＸ線入射窓をリ
ング状に形成した一つの半導体Ｘ線検出器を用いる点を
特徴的構成としているので、Ｘ線ガイド体の端面と試料
との距離を小さくして、有効検出立体角を大きくとれ
る。The present invention is characterized in that a single semiconductor X-ray detector having a hollow shaft structure and an X-ray entrance window formed in a ring shape is used, so that the end face of the X-ray guide body and the sample can be separated. The effective detection solid angle can be increased by reducing the distance.
また、一次Ｘ線の強度を高めること無く二次Ｘ線の検
出感度を向上できる。In addition, the secondary X-ray detection sensitivity can be improved without increasing the primary X-ray intensity.
以下、本発明の一実施例を、図面を参照しながら説明
する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明に係るＸ線検出装置の一例を示す要部
の縦断面図であって、同図において、１は例えばクライ
オスタット等のハウジングで、その一側にエンドキャッ
プ２が形成されており、これらハウジング１及びエンド
キャップ２の内部は真空に保たれている（図中の斜線
部）。FIG. 1 is a longitudinal sectional view of an essential part showing an example of an X-ray detection apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a housing such as a cryostat, on which an end cap 2 is formed on one side. The interiors of the housing 1 and the end cap 2 are kept in a vacuum (hatched portion in the figure).
３は例えばSi（Li）検出器等の半導体Ｘ線検出器で、
この半導体Ｘ線検出器３はその中心に中空部４を有する
軸中空構造に形成してあり、その前面（試料Ｓに臨む
側）に設けられる例えばルベリリウム等よりなるＸ線入
射窓５はリング状に形成されている。６は例えばFETよ
りなるプリアンプで、半導体Ｘ線検出器３からの電気信
号を低ノイズで増幅することができる。3 is a semiconductor X-ray detector such as a Si (Li) detector,
This semiconductor X-ray detector 3 is formed in an axial hollow structure having a hollow portion 4 at the center thereof, and an X-ray incident window 5 made of, for example, ruberylium provided on the front surface (the side facing the sample S) is a ring. It is formed in a shape. Reference numeral 6 denotes a preamplifier formed of, for example, an FET, which can amplify an electric signal from the semiconductor X-ray detector 3 with low noise.
７は図外のＸ線源からのＸ線８を試料Ｓ側に導く例え
ばガラスよりなる円筒状のＸ線ガイド体で、その内壁面
はＸ線８を全反射し得る平滑度を有し、Ｘ線検出器３の
中空部４を挿通させてある。Reference numeral 7 denotes a cylindrical X-ray guide body made of, for example, glass, which guides X-rays 8 from an X-ray source (not shown) to the sample S side, and has an inner wall surface having a smoothness capable of totally reflecting the X-rays 8. The hollow part 4 of the X-ray detector 3 is inserted.
９は半導体Ｘ線検出器３及びプリアンプ６を冷却する
ための冷却パイプで、その一端はＸ線検出器３及びプリ
アンプ６に対して熱的に結合してあり、他端は図外のデ
ュワー内の液体窒素に浸された冷却棒10に対して熱的に
結合してある。尚、上記冷却パイプ９及び冷却棒10は例
えば銅等熱良導体によって構成してある。11,12はそれ
ぞれ熱絶縁部材よりなる熱絶縁ホルダ、熱絶縁板で、Ｘ
線ガイド体７及び冷却パイプ９を所定の状態に保持する
スペーサとしての機能をも有している。Reference numeral 9 denotes a cooling pipe for cooling the semiconductor X-ray detector 3 and the preamplifier 6, one end of which is thermally coupled to the X-ray detector 3 and the preamplifier 6, and the other end of which is inside a dewar (not shown). Is thermally coupled to a cooling rod 10 immersed in liquid nitrogen. The cooling pipe 9 and the cooling rod 10 are made of a good heat conductor such as copper. Numerals 11 and 12 denote a heat insulating holder and a heat insulating plate, respectively, made of a heat insulating member.
It also has a function as a spacer for holding the wire guide body 7 and the cooling pipe 9 in a predetermined state.
而して、上記構成のＸ線検出装置において、半導体Ｘ
線検出器３及びプリアンプ６は冷却パイプ９及び冷却棒
10によって所定の温度になるように冷却される。Thus, in the X-ray detection device having the above configuration, the semiconductor X
The line detector 3 and the preamplifier 6 are composed of a cooling pipe 9 and a cooling rod.
It is cooled by 10 to a predetermined temperature.
そして、Ｘ線源（図外）からのＸ線８を、半導体Ｘ線
検出器３の中空部４を挿通するＸ線ガイド体７を経て試
料Ｓに照射すると、この試料Ｓの表面から二次Ｘ線（螢
光Ｘ線、回折Ｘ線、コンプトン散乱Ｘ線）が発生し、こ
の二次Ｘ線はリング状のＸ線入射窓５を経て半導体Ｘ線
検出器３に入射する。半導体Ｘ線検出器３は入射した各
二次Ｘ線のエネルギーに比例した電気信号を発生し、こ
の信号はプリアンプ６によって適宜増幅された後、取り
出される。これによって、所定の螢光Ｘ線の計測、回折
Ｘ線の計測、コンプトン散乱Ｘ線のスペクトル計測をそ
れぞれ行うことができる。When the sample S is irradiated with X-rays 8 from an X-ray source (not shown) through an X-ray guide body 7 penetrating the hollow portion 4 of the semiconductor X-ray detector 3, X-rays (fluorescent X-rays, diffracted X-rays, Compton scattered X-rays) are generated, and the secondary X-rays enter the semiconductor X-ray detector 3 through a ring-shaped X-ray entrance window 5. The semiconductor X-ray detector 3 generates an electric signal proportional to the energy of each of the incident secondary X-rays, and this signal is appropriately amplified by the preamplifier 6 and then extracted. As a result, measurement of predetermined fluorescent X-rays, measurement of diffraction X-rays, and spectrum measurement of Compton scattered X-rays can be respectively performed.
而して、上記構成によれば、外部のＸ線８を円筒状の
Ｘ線ガイド体７により効率よく試料Ｓまで到達させるこ
とができ、しかも、Ｘ線ガイド体７の端面と試料Ｓとの
距離ｌを任意に設定することができるので、螢光Ｘ線の
計測においては、前記距離ｌを大きくすることによって
有効検出立体角θを大きくすることができ、検出感度を
大幅に向上させることができる。そして、回折Ｘ線の計
測においては、一次Ｘ線８を中心とする軸対称に二次Ｘ
線を計測することができるので、一定の回折角の回折Ｘ
線の全てを捕捉することができ、従って、回折Ｘ線がリ
ング状である場合や斑点形状である場合においても、正
確かつ感度よく計測を行うことができる。又、コンプト
ン散乱Ｘ線のスペクトル計測においては、一定の散乱角
θ０が得られるので、精密なエネルギースペクトルの測
定を行うことができ、しかも、有効検出立体角θを大き
くすることができるので感度が向上する。Thus, according to the above configuration, the external X-rays 8 can efficiently reach the sample S by the cylindrical X-ray guide 7, and further, the end face of the X-ray guide 7 and the sample S Since the distance l can be set arbitrarily, in the measurement of fluorescent X-rays, the effective detection solid angle θ can be increased by increasing the distance l, and the detection sensitivity can be greatly improved. it can. In the measurement of the diffracted X-rays, the secondary X-rays are symmetrical about the primary X-ray 8.
X-rays can be measured, so diffraction X at a certain diffraction angle
All of the lines can be captured, and therefore, even when the diffracted X-ray has a ring shape or a spot shape, accurate and sensitive measurement can be performed. In the Compton scattered X-ray spectrum measurement, a constant scattering angle θ 0 can be obtained, so that a precise energy spectrum can be measured, and the effective detection solid angle θ can be increased, so that sensitivity can be increased. Is improved.
本発明は、上述の実施例に限られるものではなく、例
えば半導体Ｘ線検出器３はピュアゲルマニウムを用いた
ものであってもよい。又、Ｘ線ガイド体７は鉛或いは真
鍮よりなるコリメータによって構成してもよい。The present invention is not limited to the above-described embodiment. For example, the semiconductor X-ray detector 3 may use pure germanium. Further, the X-ray guide body 7 may be constituted by a collimator made of lead or brass.
以上説明したように、本発明に係るＸ線検出装置は、
一つの半導体Ｘ線検出器を軸中空構造に形成してそのＸ
線入射窓をリング状に形成すると共に、Ｘ線源からのＸ
線が前記Ｘ線検出器の中空部を挿通するＸ線ガイド体を
経て試料に対して照射されるようにしているので、Ｘ線
ガイド体により外部からのＸ線を効率よく試料部まで到
達させることができ、しかも、Ｘ線ガイド体の端部と試
料との距離を一定に保つことにより一次Ｘ線に対して一
定の取り出し角度が得られ、又、前記距離を極度に小さ
くすることにより大きな有効検出立体角を得ることがで
きるので、螢光Ｘ線，回折Ｘ線，コンプトン散乱Ｘ線の
スペクトル計測をそれぞれ精度よく行うことができる。As described above, the X-ray detection apparatus according to the present invention
One semiconductor X-ray detector is formed in a hollow shaft structure and its X
The radiation entrance window is formed in a ring shape and the X-ray from the X-ray source is
Since the sample is irradiated with the X-rays through the X-ray guide body passing through the hollow part of the X-ray detector, the X-ray guide body allows X-rays from the outside to reach the sample part efficiently. In addition, by keeping the distance between the end of the X-ray guide body and the sample constant, a constant extraction angle with respect to primary X-rays can be obtained. Since an effective detection solid angle can be obtained, spectrum measurement of fluorescent X-rays, diffraction X-rays, and Compton scattered X-rays can be performed with high accuracy.
そして、本発明は、スリット、バランスドフィルタ、
一次Ｘ線用のコリメータおよび比例計数管等のＸ線検出
器を備えてＸ線検出器に一次Ｘ線が検出されたときの回
折角より試料中の各元素ごとの螢光Ｘ線を検出する波長
分散型のＸ線検出装置に関するものでは無く、半導体Ｘ
線検出器を用いることで、複数の回折Ｘ線の測定と同様
にコンプトン散乱Ｘ線、螢光Ｘ線による多元素の同時測
定が行えるエネルギー分散型のＸ線検出装置に関するも
のであって、軸中空構造に形成してそのＸ線入射窓をリ
ング状に形成した一つの半導体Ｘ線検出器を用いる点を
特徴的構成としている。この特徴的構成により、Ｘ線ガ
イド体の端面と試料との距離を小さくして、つまり、半
導体Ｘ線検出器を試料に近づけて測定することが可能で
ある。言い換えると、有効検出立体角が大きくとれ、ま
た、一次Ｘ線を中心とする軸対称にＸ線を計測すること
ができるので、回折Ｘ線がリング状である場合や斑点形
状になる場合においても、その一部だけを計測するので
はなく、例えば一定の回折角の回折Ｘ線の全てを捕捉で
きることになるので、試料の微小領域から発せられる螢
光Ｘ線、回折Ｘ線、コンプトン散乱Ｘ線の３つの分析線
を効率よく検出できる。And the present invention provides a slit, a balanced filter,
An X-ray detector such as a primary X-ray collimator and a proportional counter is provided. The X-ray detector detects fluorescent X-rays of each element in the sample from the diffraction angle when the primary X-ray is detected. It is not related to wavelength-dispersive X-ray detectors.
The present invention relates to an energy-dispersive X-ray detection device capable of simultaneously measuring multiple elements by Compton scattered X-rays and fluorescent X-rays as well as measurement of a plurality of diffracted X-rays by using a ray detector. A characteristic configuration is that one semiconductor X-ray detector having a hollow structure and an X-ray entrance window formed in a ring shape is used. With this characteristic configuration, the distance between the end face of the X-ray guide body and the sample can be reduced, that is, the measurement can be performed with the semiconductor X-ray detector close to the sample. In other words, the effective detection solid angle can be large, and the X-rays can be measured axially symmetric with respect to the primary X-ray. Therefore, even when the diffracted X-ray has a ring shape or a spot shape, It is possible to capture all of the diffracted X-rays at a certain diffraction angle instead of measuring only a part of them, so that fluorescent X-rays, diffracted X-rays, Compton scattered X-rays emitted from a small area of the sample Can be efficiently detected.
また、一次Ｘ線の強度を高めること無く二次Ｘ線の検
出感度を向上でき、微量の試料や特定微小領域の高感度
分析が可能となる。Further, the detection sensitivity of secondary X-rays can be improved without increasing the intensity of primary X-rays, and high-sensitivity analysis of a small amount of a sample or a specific minute region becomes possible.
更に、本発明は、以下に示す利点も有する。 Further, the present invention has the following advantages.
Ｘ線検出器の中空部に挿通されたＸ線ガイド体の内
壁面が、Ｘ線を全反射する構造であるので、Ｘ線源から
のＸ線（一次Ｘ線）を絞ることができる。これにより一
次Ｘ線を試料の微小領域に照射でき、したがって、試料
から発せられる螢光Ｘ線、回折Ｘ線、コンプトン散乱Ｘ
線の３つの分析線（二次Ｘ線）による試料の微小領域の
測定が可能である。Since the inner wall surface of the X-ray guide inserted into the hollow portion of the X-ray detector has a structure that totally reflects X-rays, X-rays (primary X-rays) from the X-ray source can be reduced. As a result, primary X-rays can be irradiated to a small area of the sample, and therefore, fluorescent X-rays, diffraction X-rays, Compton scattering X-rays emitted from the sample can be obtained.
It is possible to measure a small area of the sample by using three analysis lines (secondary X-rays).
試料を真空雰囲気下にセットすること無く大気雰囲
気下にセットした状態で試料の微小領域からの螢光Ｘ線
の計測、回折Ｘ線の計測、コンプトン散乱Ｘ線のスペク
トル計測がそれぞれ可能である。Measurement of fluorescent X-rays, diffraction X-rays, and spectrum measurement of Compton scattered X-rays from a small area of the sample can be performed in a state where the sample is set in an air atmosphere without being set in a vacuum atmosphere.
第１図は本発明に係るＸ線検出装置の一例を示す要部の
縦断面図である。 第２図は従来技術を説明するための図である。 ３……一つの半導体Ｘ線検出器、４……中空部、５……
Ｘ線入射窓、７……Ｘ線ガイド体、８……Ｘ線源からの
Ｘ線（一次Ｘ線）、Ｓ……試料。FIG. 1 is a longitudinal sectional view of a main part showing an example of an X-ray detection device according to the present invention. FIG. 2 is a diagram for explaining the prior art. 3 ... one semiconductor X-ray detector, 4 ... hollow part, 5 ...
X-ray entrance window, 7: X-ray guide body, 8: X-rays (primary X-rays) from X-ray source, S: sample.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 脇山 芳博 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内 (72)発明者 岡田 義明 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内 (56)参考文献 特開 昭52−21886（ＪＰ，Ａ) 特開 昭62−106352（ＪＰ，Ａ) 特開 昭62−240809（ＪＰ，Ａ) 特開 昭54−74796（ＪＰ，Ａ) 実開 昭61−36955（ＪＰ，Ｕ) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiro Wakiyama 2 Higashi-cho, Kichijoin Miya, Minami-ku, Kyoto, Kyoto (72) Inventor Yoshiaki Okada 2 Higashi-cho, Kichijoin Miya, Minami-ku, Kyoto, Kyoto HORIBA, Ltd. (56) References JP-A-52-21886 (JP, A) JP-A-62-106352 (JP, A) JP-A-62-240809 (JP, A) JP-A-54-74796 (JP) JP, A) Actually open 1986-36955 (JP, U)
Claims (1)
し、この試料から発せられる螢光Ｘ線、回折Ｘ線、コン
プトン散乱Ｘ線を一つの半導体Ｘ線検出器によって検出
するようにしたＸ線検出装置であって、前記半導体Ｘ線
検出器を軸中空構造に形成してそのＸ線入射窓をリング
状に形成すると共に、前記半導体Ｘ線検出器の中空部に
挿通され、かつ、内壁面がＸ線源からのＸ線を全反射す
るＸ線ガイド体を経てＸ線が大気中の試料に対して照射
され、かつ前記Ｘ線ガイド体の端面と試料との距離を任
意に設定可能としたことを特徴とするＸ線検出装置。1. A sample is irradiated with primary X-rays from an X-ray source, and fluorescent X-rays, diffraction X-rays, and Compton scattered X-rays emitted from the sample are detected by one semiconductor X-ray detector. An X-ray detection device as described above, wherein the semiconductor X-ray detector is formed in a hollow shaft structure, the X-ray entrance window is formed in a ring shape, and the semiconductor X-ray detector is inserted into a hollow portion of the semiconductor X-ray detector. X-rays are applied to the sample in the atmosphere via an X-ray guide body whose inner wall surface totally reflects X-rays from the X-ray source, and the distance between the end face of the X-ray guide body and the sample is determined. An X-ray detection device, which can be set arbitrarily.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63149516A JP2799994B2 (en) | 1988-06-17 | 1988-06-17 | X-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63149516A JP2799994B2 (en) | 1988-06-17 | 1988-06-17 | X-ray detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01316683A JPH01316683A (en) | 1989-12-21 |
| JP2799994B2 true JP2799994B2 (en) | 1998-09-21 |
Family
ID=15476847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63149516A Expired - Lifetime JP2799994B2 (en) | 1988-06-17 | 1988-06-17 | X-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2799994B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06186344A (en) * | 1992-12-18 | 1994-07-08 | Technos Kenkyusho:Kk | Semiconductor detector |
| KR20020031665A (en) * | 2000-10-23 | 2002-05-03 | 추후보정 | X-ray microfluorescence analyzer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221886A (en) * | 1975-08-13 | 1977-02-18 | Seiko Instr & Electronics Ltd | Measuring head of radiation measuring apparatus |
| JPS6029896B2 (en) * | 1977-11-28 | 1985-07-13 | 理学電機株式会社 | X-ray analyzer |
| JPS6136955U (en) * | 1984-08-10 | 1986-03-07 | 日本電子株式会社 | X-ray detection device for electron microscopes, etc. |
| JPS62106352A (en) * | 1985-11-01 | 1987-05-16 | Natl Inst For Res In Inorg Mater | Scanning type x-ray microscope |
| JPS62240809A (en) * | 1986-04-14 | 1987-10-21 | Seiko Instr & Electronics Ltd | Measuring apparatus for amount of adhesion of fluorescent x-ray |
-
1988
- 1988-06-17 JP JP63149516A patent/JP2799994B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01316683A (en) | 1989-12-21 |
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