JP2801896B2 - Manufacturing method of metal-based multilayer circuit board - Google Patents
Manufacturing method of metal-based multilayer circuit boardInfo
- Publication number
- JP2801896B2 JP2801896B2 JP8231684A JP23168496A JP2801896B2 JP 2801896 B2 JP2801896 B2 JP 2801896B2 JP 8231684 A JP8231684 A JP 8231684A JP 23168496 A JP23168496 A JP 23168496A JP 2801896 B2 JP2801896 B2 JP 2801896B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit board
- circuit
- insulating adhesive
- copper foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 141
- 239000002184 metal Substances 0.000 title claims description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 102
- 239000010410 layer Substances 0.000 claims description 77
- 239000012790 adhesive layer Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 59
- 239000004020 conductor Substances 0.000 claims description 56
- 239000000853 adhesive Substances 0.000 claims description 42
- 230000001070 adhesive effect Effects 0.000 claims description 42
- 239000003795 chemical substances by application Substances 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 20
- 150000004706 metal oxides Chemical class 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 238000005304 joining Methods 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims 1
- 239000011889 copper foil Substances 0.000 description 78
- 239000003822 epoxy resin Substances 0.000 description 33
- 229920000647 polyepoxide Polymers 0.000 description 33
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 31
- 150000001412 amines Chemical class 0.000 description 27
- 238000007747 plating Methods 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 19
- 238000010030 laminating Methods 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 15
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000003475 lamination Methods 0.000 description 11
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052582 BN Inorganic materials 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229930185605 Bisphenol Natural products 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ノイズシールド性
と耐電圧性に優れ、熱放散性が良好な金属ベース多層回
路基板及び生産性に優れる金属ベース多層回路基板の製
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-based multilayer circuit board having excellent noise shielding properties and withstand voltage and excellent heat dissipation, and a method for producing a metal-based multilayer circuit board having excellent productivity.
【０００２】[0002]
【従来の技術】近年、半導体搭載用の回路基板において
は、基板の小型化、高密度実装化および高性能化が要求
され、更には、半導体素子の小型化、高性能化、ハイパ
ワー化が進み、半導体素子から発生した熱を如何に放散
するかということが問題となっている。そこで、電源分
野を中心に金属板上に絶縁層を介して金属箔を積層し回
路形成した金属ベース回路基板が熱放散性に優れるとい
う理由から使用されてきている。しかし、金属ベース回
路基板は金属板の上に薄い絶縁層を塗布した構造である
ため、ノイズが発生しやすく、モジュールの誤動作を引
き起こしやすいという問題があった。2. Description of the Related Art In recent years, circuit boards for mounting semiconductors have been required to be smaller in size, have higher mounting density, and have higher performance. In addition, miniaturization, higher performance, and higher power of semiconductor elements have been required. The problem is how to dissipate the heat generated from the semiconductor element. Therefore, mainly in the power supply field, a metal base circuit board formed by laminating a metal foil on a metal plate via an insulating layer and forming a circuit has been used because of its excellent heat dissipation. However, since the metal base circuit board has a structure in which a thin insulating layer is applied on a metal plate, there is a problem that noise is easily generated and a module is likely to malfunction.
【０００３】ノイズをシールドし、更に熱放散性を高め
て高密度実装化を達成する目的で、例えば金属ベース回
路基板上の全面あるいは一部に両面に回路を有する上層
回路基板を接着剤を介して積層し、前記上層回路基板上
に発熱性の電子部品を搭載した金属ベース多層回路基板
が公知となっている（特開平５−３２７１６９号公
報）。 このような金属ベース多層回路基板では、金属
板と上層基板の間に熱伝導性の悪い樹脂からなる接着剤
層が存在すること、又、絶縁材としてエポキシ含浸ガラ
スクロス等の熱放散性の悪い材料が使用されていること
から、上層回路パターン上に発熱性の高いパワー電子部
品を搭載する場合には、熱放散性が不十分であり、電子
部品の温度が上昇し、ひいては誤動作を生ぜしめるとい
う問題があった。本発明者らは、上記問題点の解決を意
図して、いろいろな検討を行い、金属板に金属酸化物及
び／または金属窒化物を含有する絶縁接着剤層を介して
回路基板を接合した構造の金属ベース多層回路基板（特
願平７−８７００１号）を提示している。For the purpose of shielding noise and increasing heat dissipation to achieve high-density mounting, for example, an upper layer circuit board having a circuit on both sides of the entire surface of a metal base circuit board or a part thereof is bonded with an adhesive. A metal-based multilayer circuit board is known in which heat-generating electronic components are mounted on the above-mentioned upper circuit board (Japanese Patent Laid-Open No. 5-327169). In such a metal-based multilayer circuit board, there is an adhesive layer made of a resin having poor heat conductivity between the metal plate and the upper layer board, and the heat dissipating property such as epoxy impregnated glass cloth as an insulating material is poor. Because of the use of the material, when mounting high heat-generating power electronic components on the upper circuit pattern, heat dissipation is insufficient, the temperature of the electronic components rises, and eventually malfunctions occur There was a problem. Means for Solving the Problems The inventors of the present invention have conducted various studies with a view to solving the above-described problems, and have studied a structure in which a circuit board is bonded to a metal plate via an insulating adhesive layer containing a metal oxide and / or a metal nitride. (Japanese Patent Application No. 7-87001).
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記金属ベー
ス多層回路基板を製造する場合、予め上層回路基板を準
備し、これを絶縁接着剤層を介して金属板上に張り付け
るという従来からの方法によるときには、上層基板の厚
みが厚く弾力性に欠けるので、張り付け時に上層基板に
働く若干の変形によって欠陥が生じ上層回路の両面にあ
る回路間の耐電圧が低下してしまったり、或いは、絶縁
接着剤層と上層回路基板に予め作製されている回路との
間に存在する空気が巻き込まれて、上層回路基板がわず
かながら膨れたり、回路と金属板との間の耐電圧特性が
低下してしまう等の理由で、歩留まりが低く、生産性が
悪いという問題があった。However, in the case of manufacturing the above-mentioned metal-based multilayer circuit board, a conventional method of preparing an upper-layer circuit board in advance and attaching it to a metal plate via an insulating adhesive layer is used. In some cases, the thickness of the upper substrate is so large that it lacks elasticity, so that a slight deformation acting on the upper substrate at the time of bonding causes a defect, resulting in a decrease in the withstand voltage between the circuits on both sides of the upper layer circuit, or insulation bonding. Air existing between the agent layer and the circuit pre-fabricated on the upper circuit board is entrained, causing the upper circuit board to swell slightly, or withstanding voltage characteristics between the circuit and the metal plate to decrease. For this reason, there is a problem that the yield is low and the productivity is poor.
【０００５】本発明の目的は、金属板に金属酸化物及び
／又は金属窒化物を含有する絶縁接着剤層を介して回路
基板を接合した構造を有する金属ベース多層回路基板に
おいて、一層熱抵抗が小さく、熱放散性に優れ、又耐ノ
イズ性及び耐電圧特性が優れる金属ベース多層回路基板
を生産性良く提供することである。An object of the present invention is to provide a metal-based multilayer circuit board having a structure in which a circuit board is bonded to a metal plate via an insulating adhesive layer containing a metal oxide and / or a metal nitride, in which the thermal resistance is further reduced. An object of the present invention is to provide a metal-based multilayer circuit board which is small, has excellent heat dissipation, and has excellent noise resistance and withstand voltage characteristics with high productivity.
【０００６】[0006]
【課題を解決するための手段】本発明は、 （１）金属板上に、第１の絶縁接着剤層を介して導体回
路を形成してなる金属ベース回路基板の前記導体回路上
に第２の絶縁接着剤層を介して回路用導体層を接合する
工程。 （２）前記導体回路と回路用導体層を電気的に接続する
ためのバイアホールを形成する工程。 （３）前記回路用導体層に回路を形成する工程。を経る
ことを特徴とする金属ベース多層回路基板の製造法であ
る。According to the present invention, there is provided: (1) a conductive circuit formed on a metal plate via a first insulating adhesive layer; Bonding the circuit conductor layer through the insulating adhesive layer. (2) forming a via hole for electrically connecting the conductor circuit and the circuit conductor layer; (3) forming a circuit on the circuit conductor layer; And a method for manufacturing a metal-based multilayer circuit board.
【０００７】本発明は、前記（２）工程前に第１の絶縁
接着剤層が加熱硬化されていることを特徴とする前記金
属ベース多層回路基板の製造法であり、バイアホールを
形成する工程に於いて回路用導体の所定の位置をエッチ
ングにより除去し開孔し、該孔にレーザー光線を照射し
て第２の絶縁接着剤層を除去し、更に銅めっきしてバイ
アホールを形成することを特徴とする前記金属ベース多
層回路基板の製造法であり、更に前記の導体回路の厚さ
が５μｍ以上１５０μｍ以下であることを特徴とする金
属ベース多層回路基板の製造法である。The present invention is the method of manufacturing a metal-based multilayer circuit board, wherein the first insulating adhesive layer is heat-cured before the step (2), wherein a step of forming a via hole is performed. A predetermined position of the circuit conductor is removed by etching in the above step, a hole is formed, and the hole is irradiated with a laser beam to remove the second insulating adhesive layer, and further plated with copper to form a via hole. A method of manufacturing the metal-based multilayer circuit board, wherein the thickness of the conductive circuit is 5 μm or more and 150 μm or less.
【０００８】更に、本発明は、上記の製造法により得ら
れる金属ベース多層回路基板であって、第１の絶縁接着
剤層の熱伝導率が３５×１０-4cal/cm・sec・℃以下１５
０×１０-4cal/cm・sec・℃であり、厚さが２０μｍ以上
２００μｍ以下であることを特徴とする金属ベース多層
回路基板であり、特に、第２の絶縁接着剤層の熱伝導率
が３５×１０-4cal/cm・sec・℃以下１５０×１０-4cal/c
m・sec・℃であり、厚さが４０μｍ以上２００μｍ以下で
あることを特徴とする金属ベース多層回路基板である。Further, the present invention is a metal-based multilayer circuit board obtained by the above manufacturing method, wherein the thermal conductivity of the first insulating adhesive layer is 35 × 10 −4 cal / cm · sec · ° C. or less. Fifteen
A metal-based multilayer circuit board having a temperature of 0 × 10 −4 cal / cm · sec · ° C. and a thickness of 20 μm or more and 200 μm or less, and in particular, a thermal conductivity of a second insulating adhesive layer. Is less than 35 × 10 -4 cal / cm ・ sec ・ ℃ 150 × 10 -4 cal / c
m.sec..degree. C. and a thickness of not less than 40 .mu.m and not more than 200 .mu.m.
【０００９】[0009]
【発明の実施の形態】以下、図を用いて本発明について
詳細に説明する。本発明は、金属ベース多層回路基板の
製造法であって、図１に例示した金属板１上に第１の絶
縁接着剤層２を介して導体回路３を有する金属ベース回
路基板４を用い、前記金属ベース回路基板４の導体回路
３上に第２の絶縁接着剤層５を介して回路用導体６を接
合する工程（以下第１の工程という）を含む。尚、以下
の説明に於いては簡略のために、導体回路３上の全面を
覆うように第２の絶縁接着剤層５を介し回路用導体６を
接合する場合を説明するが、導体回路３の一部が露出す
るように接合されていても構わない。この工程を経て、
金属ベース回路基板４は図２の構造となる。又、本発明
は、導体回路３と回路用導体層６を電気的に接続するた
めのバイアホールを形成する工程（以下第２の工程）を
含む。前記の図２の構造は、この工程を経て、図５に例
示したようなバイアホール７を有する構造となる。更
に、本発明は回路用導体層６に回路を形成する工程（以
下第３の工程）を含み、この工程を経て前記の図５に例
示の構造は図６に例示した金属ベース多層回路基板８を
構成する。図３及び図４は、本発明の金属ベース多層回
路基板の製造法での途中の状態を示す図であり、図３は
図２例示の構造の中間製品が直ちに第３の工程を経た時
の状態を示し、図４は図３で得た中間製品について第２
の工程の途中で、例えばレーザー照射して第２の絶縁接
着剤層の一部を切削した後の状態を示している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. The present invention relates to a method of manufacturing a metal-based multilayer circuit board, using a metal-based circuit board 4 having a conductor circuit 3 on a metal plate 1 illustrated in FIG. 1 via a first insulating adhesive layer 2, A step of joining a circuit conductor 6 to the conductor circuit 3 of the metal base circuit board 4 via a second insulating adhesive layer 5 (hereinafter referred to as a first step). In the following description, for the sake of simplicity, the case where the circuit conductor 6 is joined via the second insulating adhesive layer 5 so as to cover the entire surface of the conductor circuit 3 will be described. May be joined so that a part of them may be exposed. After this process,
The metal base circuit board 4 has the structure of FIG. The present invention also includes a step of forming a via hole for electrically connecting the conductor circuit 3 and the circuit conductor layer 6 (hereinafter, a second step). The structure shown in FIG. 2 has a via hole 7 as illustrated in FIG. 5 through this step. Further, the present invention includes a step of forming a circuit on the circuit conductor layer 6 (hereinafter, a third step). After this step, the structure illustrated in FIG. Is configured. 3 and 4 are views showing a state in the middle of a method of manufacturing a metal-based multilayer circuit board according to the present invention. FIG. 3 shows a state in which an intermediate product having the structure shown in FIG. 2 immediately goes through a third step. FIG. 4 shows the state of the intermediate product obtained in FIG.
Shows a state after a part of the second insulating adhesive layer is cut off by, for example, laser irradiation in the middle of the step.
【００１０】本発明の第１の工程では通常の金属ベース
回路基板４が用いられるが、得られる金属ベース多層回
路基板８の耐電圧特性の面からは、金属ベース回路基板
４を構成する絶縁接着剤層が充分に加熱硬化されている
ことが好ましい。然るに、金属ベース回路基板の絶縁接
着剤層は、金属ベース多層回路基板８の第１の絶縁接着
剤層２となるので、この硬化が不充分で、例えば揮発性
物質が含まれていると、第２の絶縁接着剤層５を塗布後
の硬化に際しふくれ現象を発生したり、金属ベース多層
回路基板８の耐電圧を低下する等の問題が発生すること
があるからである。In the first step of the present invention, an ordinary metal-based circuit board 4 is used. However, from the viewpoint of the withstand voltage characteristic of the obtained metal-based multilayer circuit board 8, the insulating adhesive forming the metal-based circuit board 4 is used. It is preferable that the agent layer is sufficiently cured by heating. However, since the insulating adhesive layer of the metal-based circuit board becomes the first insulating adhesive layer 2 of the metal-based multilayer circuit board 8, the curing is insufficient and, for example, when a volatile substance is contained, This is because, when the second insulating adhesive layer 5 is cured after application, problems such as a blistering phenomenon and a decrease in the withstand voltage of the metal-based multilayer circuit board 8 may occur.
【００１１】又、第１の工程は、金属ベース回路基板４
上に塗布された第２の絶縁接着剤層５が半硬化状態にあ
るときに、熱プレス、ラミネーターを用いて回路用導体
層６を張り付け、第２の絶縁接着剤層を硬化することで
行われるのが一般的であるが、本発明では導体回路３の
厚さが５μｍ以上１５０μｍ以下とすることで、第２の
絶縁接着剤層５が導体回路３の間に入り込み導体回路３
と回路用導体６の間の耐電圧性を確保できるようにな
る。導体回路３の厚みが５μｍ未満の金属ベース回路基
板４は容易に入手できないし、１５０μｍを越える時は
耐電圧性に優れる金属ベース多層回路基板８を必ずしも
得られるとは限らなくなるからである。In the first step, the metal base circuit board 4
When the second insulating adhesive layer 5 applied thereon is in a semi-cured state, the circuit conductor layer 6 is attached using a hot press or a laminator, and the second insulating adhesive layer is cured. In the present invention, the second insulating adhesive layer 5 is inserted between the conductor circuits 3 so that the thickness of the conductor circuits 3 is 5 μm or more and 150 μm or less.
And the circuit conductor 6 can withstand voltage. This is because the metal base circuit board 4 having a thickness of the conductor circuit 3 of less than 5 μm is not readily available, and if it exceeds 150 μm, it is not always possible to obtain a metal base multilayer circuit board 8 having excellent withstand voltage.
【００１２】本発明は、上記第１、第２及び第３の工程
を採用することで、従来法の問題点であった、回路間或
いは回路と金属板との間の耐電圧特性の低下、膨れの発
生を大幅に防止し、その結果として生産性を向上するも
のである。即ち、本発明においては、弾力性に富み、し
かも回路形成されていない金属箔を接合するので、回路
間の耐電圧特性が損なわれず、膨れも防止できるし、
又、予め金属板との絶縁を確保してある金属ベース回路
基板を実質的に用いているので、金属板と回路間の耐電
圧特性をも損なうことがない。The present invention employs the first, second, and third steps to reduce the withstand voltage characteristic between circuits or between a circuit and a metal plate, which is a problem of the conventional method. It is intended to largely prevent the occurrence of blisters, and as a result, to improve the productivity. That is, in the present invention, since the metal foil which is rich in elasticity and has no circuit formed thereon is joined, the withstand voltage characteristics between the circuits are not impaired, and swelling can be prevented.
Further, since the metal base circuit board, which has been previously insulated from the metal plate, is substantially used, the withstand voltage characteristics between the metal plate and the circuit are not impaired.
【００１３】本発明の第２の工程は、回路用導体層６と
第２の絶縁接着剤層５の一部を物理的、化学的或いは機
械的に除去しバイアホール用の孔を形成する操作と前記
の操作でできた空隙の少なくとも内壁部にめっき、印刷
等の方法で導電性物質を充填する操作との組み合わせに
より、導体回路３と回路用導体層６との電気的な接続を
行う工程である。本発明者らは、いろいろ検討の結果、
回路用導体層６の所定の位置をエッチングにより開孔
し、該孔にレーザー光線を照射して第２の絶縁接着剤層
５を除去し、更にめっきすることでバイアホールを形成
する方法が、寸法精度高いので周辺部に傷をいれず、し
かも生産性高い方法であることを見いだしたものであ
る。In the second step of the present invention, the operation of physically, chemically or mechanically removing a part of the circuit conductor layer 6 and the second insulating adhesive layer 5 to form a hole for a via hole is performed. Electrically connecting the conductor circuit 3 and the circuit conductor layer 6 by a combination of the above operation and the operation of filling at least the inner wall of the void formed by the above operation with a conductive material by a method such as plating or printing. It is. As a result of various studies, the present inventors have
A method for forming a via hole by opening a predetermined position of the circuit conductor layer 6 by etching, irradiating the hole with a laser beam to remove the second insulating adhesive layer 5, and further plating to form a via hole. It has been found that the method is highly accurate so that the peripheral part is not damaged and the method is highly productive.
【００１４】バイアホール用の孔を形成する方法として
は、ドリル等を用いる機械加工法の他、エキシマレーザ
ー、ＣＯ2レーザー、ＹＡＧレーザー等の各種のレーザ
ー光線による方法を用いることができるし、ケミカルド
リリングにより化学的に第２の絶縁接着剤層を除去する
方法もある。As a method of forming a hole for a via hole, a method using various laser beams such as an excimer laser, a CO2 laser, and a YAG laser can be used in addition to a machining method using a drill or the like. There is also a method of chemically removing the second insulating adhesive layer.
【００１５】バイアホール用の孔の少なくとも内壁部に
導電性物質を被覆或いは充填し電気的に接続する方法に
ついては、無電解めっき、電解めっき、ダイレクトプレ
ーティング等のめっき法や、導体塗料、はんだ或いは前
記の方法を組み合わせることができる。これらの方法の
うち、特にめっき法は、安価で、生産性が高いので好ま
しい方法である。A method for covering or filling at least the inner wall portion of the via hole with a conductive substance and electrically connecting the conductive material to the via hole includes plating methods such as electroless plating, electrolytic plating, and direct plating, conductive paint, and solder. Alternatively, the above methods can be combined. Among these methods, the plating method is particularly preferable because it is inexpensive and has high productivity.
【００１６】また、バイアホール内のめっき材質につい
ては、導体回路３及び回路用導体層６との電気抵抗が大
きくならないこと、また前記導体回路や回路用導体層と
の熱膨張差による破断等が起こりにくいことから、同質
であることが好ましい。導体回路３や回路用導体の材質
は電気抵抗の小さい銅が一般に用いられるので、バイア
ホール内のめっきは銅めっきとすることが望ましい。
尚、本発明のバイアホールの形成方法は、スルーホール
についても適用できる。The plating material in the via hole does not increase the electrical resistance between the conductor circuit 3 and the conductor layer 6 for a circuit, and may cause breakage due to a difference in thermal expansion between the conductor circuit and the conductor layer for a circuit. Since it is unlikely to occur, it is preferable that they are of the same quality. As the material of the conductor circuit 3 and the circuit conductor, copper having small electric resistance is generally used, it is preferable that the plating in the via hole is copper plating.
The method of forming a via hole according to the present invention can be applied to a through hole.
【００１７】本発明の第３の工程は、第１の工程で金属
ベース回路基板に接合された回路用導体層に回路を形成
する工程であり、エッチング等の一般的な回路形成法に
よれば良い。尚、本発明においては、上記第１の工程が
最初であれば良く、第２及び第３の工程の順序は定める
必要がないし、必要に応じて前記第２及び第３の工程を
繰り返すこともできる。The third step of the present invention is a step of forming a circuit on the circuit conductor layer bonded to the metal base circuit board in the first step, and according to a general circuit forming method such as etching. good. In the present invention, the first step only needs to be performed first, the order of the second and third steps does not need to be determined, and the second and third steps may be repeated as necessary. it can.
【００１８】本発明の金属ベース多層回路基板の製造法
で得られる金属ベース多層回路基板８は、図６に全面が
多層構造のものを例示するが、その構成は次の通りであ
る。即ち、本発明の金属ベース多層回路基板８は、金属
板１上に第１の絶縁接着剤層２を介して導体回路３が形
成された金属ベース回路基板４上に、第２の絶縁接着剤
層５を介し回路用導体層６から形成された外層回路が積
層一体化されており、外層回路と導体回路３とがバイア
ホール７により電気的に接続された構造を有する。な
お、図示していないが、外層回路上には電子素子が必要
に応じ搭載されていてもよいし、ワイヤーボンディング
等により他部品と結合されていてもよい。又、導体回路
３及び外層回路は金属板１の少なくとも一主面上の少な
くとも一部に積層されていれば良く、外層回路上に回路
基板を複数積層しても構わない。FIG. 6 shows an example of a metal-based multilayer circuit board 8 obtained by the method of manufacturing a metal-based multilayer circuit board according to the present invention, which has a multilayer structure as a whole. That is, the metal-based multilayer circuit board 8 of the present invention is provided on the metal-based circuit board 4 on which the conductor circuit 3 is formed on the metal plate 1 via the first insulating adhesive layer 2. An outer layer circuit formed from the circuit conductor layer 6 is laminated and integrated via the layer 5, and has a structure in which the outer layer circuit and the conductor circuit 3 are electrically connected by via holes 7. Although not shown, an electronic element may be mounted on the outer layer circuit as necessary, or may be connected to another component by wire bonding or the like. Further, the conductor circuit 3 and the outer layer circuit need only be laminated on at least a part of at least one main surface of the metal plate 1, and a plurality of circuit boards may be laminated on the outer layer circuit.
【００１９】第１の絶縁接着剤層２の熱伝導率は３５×
１０-4cal/cm・sec・℃以上１５０×１０-4cal/cm・sec・℃
以下であり、しかもその厚みは２０μｍ以上２００μｍ
以下である。熱伝導率が３５×１０-4cal/cm・sec・℃未
満の場合には、金属ベース多層回路基板８の熱抵抗が大
きくなり、目的とする良好な熱放散性が得られないこと
がある。また、１５０×１０-4cal/cm・sec・℃を越える
ものは工業的に得ることが難しい。しかし、前記の範囲
の熱伝導率を有する第１の絶縁接着剤層２を用い、確実
に、良好な熱放散性を有する金属ベース多層基板８を得
るためには、第１の絶縁接着剤層２の厚みが２０μｍ以
上２００μｍ以下である。２００μｍを越える厚みで
は、良好な熱放散性を達成することができなくなるし、
２０μｍ未満では耐電圧性が低下するので好ましくな
い。The thermal conductivity of the first insulating adhesive layer 2 is 35 ×
10 -4 cal / cm-sec-C or higher 150 x 10 -4 cal / cm-sec-C
Or less, and the thickness is not less than 20 μm and not more than 200 μm.
It is as follows. If the thermal conductivity is less than 35 × 10 −4 cal / cm · sec · ° C., the thermal resistance of the metal-based multilayer circuit board 8 increases, and the desired good heat dissipation may not be obtained. . Further, those exceeding 150 × 10 −4 cal / cm · sec · ° C. are difficult to obtain industrially. However, in order to use the first insulating adhesive layer 2 having a thermal conductivity in the above range and to surely obtain the metal-based multilayer substrate 8 having good heat dissipation, the first insulating adhesive layer 2 2 has a thickness of not less than 20 μm and not more than 200 μm. If the thickness exceeds 200 μm, good heat dissipation cannot be achieved,
If the thickness is less than 20 μm, the withstand voltage decreases, which is not preferable.
【００２０】第１の絶縁接着剤層２は金属酸化物及び／
又は金属窒化物と樹脂とで構成される。金属酸化物及び
金属窒化物は熱伝導性に優れ、しかも電気絶縁性のもの
が好ましく、金属酸化物としては酸化アルミニウム、酸
化珪素、酸化ベリリウム、酸化マグネシウムが、金属窒
化物としては窒化硼素、窒化珪素、窒化アルミニウムが
選択され、これらを単独または２種以上を混合して用い
ることができる。特に、前記の金属酸化物のうち、酸化
アルミニウムは電気絶縁性、熱伝導性ともに良好な絶縁
接着剤層を容易に得ることができ、しかも安価に入手可
能であるという理由で、また、前記の金属窒化物のうち
窒化硼素は電気絶縁性、熱伝導性に優れ、更に誘電率が
小さいという理由で好ましい。The first insulating adhesive layer 2 comprises a metal oxide and / or
Alternatively, it is composed of a metal nitride and a resin. Metal oxides and metal nitrides are preferably excellent in heat conductivity and electrically insulating. Aluminum oxide, silicon oxide, beryllium oxide, and magnesium oxide are used as metal oxides, and boron nitride and nitride are used as metal nitrides. Silicon and aluminum nitride are selected, and these can be used alone or in combination of two or more. In particular, among the above-mentioned metal oxides, aluminum oxide can easily obtain an insulating adhesive layer having good electric insulation and thermal conductivity, and can be easily obtained at a low cost. Of the metal nitrides, boron nitride is preferred because it has excellent electrical insulation and thermal conductivity, and has a small dielectric constant.
【００２１】前記金属酸化物と金属窒化物の合量は４５
体積％以上８５体積％以下であり、好ましくは４８体積
％以上８０体積％以下である。４５体積％未満では、第
１の絶縁接着剤層２の熱伝導率を３５×１０-4cal/cm・s
ec・℃以上にすることが容易でなく、その結果、熱放散
性に優れる金属ベース多層回路基板が得られなくなる。
又、８５体積％を越える場合には、樹脂との混合におい
て気泡を巻き込み易くなり、その結果、耐電圧性に優れ
た金属ベース多層回路基板８が得られないことがある。
熱放散性に優れ、しかも耐電圧性に優れる金属ベース多
層回路基板を再現性良く得るためには、４８体積％以上
８０体積％以下の範囲が好ましい。The total amount of the metal oxide and the metal nitride is 45
It is at least 85% by volume and preferably at least 48% by volume. If it is less than 45% by volume, the thermal conductivity of the first insulating adhesive layer 2 is reduced to 35 × 10 −4 cal / cm · s.
It is not easy to increase the temperature to ec · ° C. or higher. As a result, a metal-based multilayer circuit board having excellent heat dissipation properties cannot be obtained.
On the other hand, when the content exceeds 85% by volume, bubbles are easily entrained in mixing with the resin, and as a result, the metal-based multilayer circuit board 8 having excellent withstand voltage may not be obtained.
In order to obtain a metal-based multilayer circuit board excellent in heat dissipation and voltage resistance with good reproducibility, the range of 48% by volume to 80% by volume is preferable.
【００２２】前記の第１の絶縁接着剤層２を構成する樹
脂としては、前記の金属酸化物及び／又は金属窒化物を
含みながらも、硬化状態下において、金属板１及び導体
回路３との接合力に優れ、また耐電圧特性等を損なわな
いものが選択される。このような樹脂として、エポキシ
樹脂、フェノール樹脂、ポリイミド樹脂の他各種のエン
ジニアリングプラスチックが単独または２種以上を混合
して用いることができるが、このうちエポキシ樹脂が金
属同士の接合力に優れるので好ましい。特に、エポキシ
樹脂のなかでは、流動性が高く、前記の金属酸化物及び
金属窒化物との混合性に優れるビスフェノールＡ型エポ
キシ樹脂、ビスフェノールＦ型エポキシ樹脂は一層好ま
しい樹脂である。The resin constituting the first insulating adhesive layer 2 contains the metal oxide and / or the metal nitride described above, but is in a hardened state and is in contact with the metal plate 1 and the conductor circuit 3. Those that have excellent bonding strength and do not impair withstand voltage characteristics and the like are selected. As such a resin, various engineering plastics other than epoxy resin, phenol resin, and polyimide resin can be used alone or in combination of two or more. Among them, epoxy resin is preferable because of its excellent bonding strength between metals. . In particular, among the epoxy resins, bisphenol A-type epoxy resins and bisphenol F-type epoxy resins, which have high fluidity and are excellent in mixing properties with the above-mentioned metal oxides and metal nitrides, are more preferable resins.
【００２３】第２の絶縁接着剤層５の熱伝導率は、３５
×１０-4cal/cm・sec・℃以上１５０×１０-4cal/cm・sec・
℃以下であり、しかもその厚みが４０μｍ以上２００μ
ｍ以下である。熱伝導率が３５×１０-4cal/cm・sec・℃
未満のときは、金属ベース多層回路基板８の熱抵抗が大
きくなり、目的とする良好な熱放散性が得られないこと
があるし、１５０×１０-4cal/cm・sec・℃を越えるもの
は工業的に得ることが難しい。又、第２の絶縁接着剤層
５の厚みが、４０μｍ未満の場合には耐電圧性が低下す
る場合があるし、２００μｍを越えると熱放散性が低下
するためである。第２の絶縁接着剤層５の熱伝導率と厚
さを限定することにより、金属ベース多層回路基板８が
耐電圧性と熱放散とに優れるという特性は、第１の絶縁
接着剤層２の熱伝導率が３５×１０-4cal/cm・sec・℃以
上１５０×１０-4cal/cm・sec・℃以下であって、しかも
その厚みが２０μｍ以上２００μｍ以下である場合に、
特に達成されるので好ましい。The thermal conductivity of the second insulating adhesive layer 5 is 35
× 10 -4 cal / cm ・ sec ・ ℃ or more 150 × 10 -4 cal / cm ・ sec ・
° C or less, and the thickness is 40 µm or more and 200 µ
m or less. Thermal conductivity 35 × 10 -4 cal / cm · sec · ° C
If the value is less than 1, the thermal resistance of the metal-based multilayer circuit board 8 increases, and the desired good heat dissipation property may not be obtained, or exceeds 150 × 10 −4 cal / cm · sec · ° C. Is difficult to obtain industrially. If the thickness of the second insulating adhesive layer 5 is less than 40 μm, the withstand voltage may decrease, and if it exceeds 200 μm, the heat dissipation may decrease. By limiting the thermal conductivity and the thickness of the second insulating adhesive layer 5, the characteristic that the metal-based multilayer circuit board 8 is excellent in the withstand voltage and the heat dissipation is the same as that of the first insulating adhesive layer 2. When the thermal conductivity is 35 × 10 −4 cal / cm · sec · ° C. or more and 150 × 10 −4 cal / cm · sec · ° C. or less and the thickness is 20 μm or more and 200 μm or less,
It is particularly preferred because it is achieved.
【００２４】第２の絶縁接着剤層５は、金属酸化物と金
属窒化物との合量が４５体積％以上８５体積％以下、好
ましくは４８体積％以上８０体積％以下と残部が樹脂と
を用いることで、得ることができる。特に、金属酸化物
が酸化アルミニウム、金属窒化物が窒化硼素のときに好
ましい結果が得られる。第２の絶縁接着剤層５に含まれ
る金属酸化物及び／又は金属窒化物の充填量、種類及び
樹脂の種類については、第１の絶縁接着剤層２に於ける
理由と同じである。即ち、金属酸化物及び金属窒化物は
熱伝導性に優れ、しかも電気絶縁性のものが好ましく、
金属酸化物としては酸化アルミニウム、酸化珪素、酸化
ベリリウム、酸化マグネシウムがあげられ、金属窒化物
としては窒化硼素、窒化珪素、窒化アルミニウムが選択
され、これらを単独または２種以上を混合して用いるこ
とができる。特に、金属酸化物として酸化アルミニウム
は電気絶縁性、熱伝導性ともに良好な絶縁接着剤層を容
易に得られるし、しかも安価に入手容易であるという理
由で、好ましいものであり、金属窒化物として窒化硼素
は電気絶縁性、熱伝導性が優れ、更に誘電率が小さいの
で好ましい。The second insulating adhesive layer 5 has a total content of the metal oxide and the metal nitride of 45% by volume to 85% by volume, preferably 48% by volume to 80% by volume, and the balance of resin. It can be obtained by using. Particularly, preferable results are obtained when the metal oxide is aluminum oxide and the metal nitride is boron nitride. The amount, type, and type of resin of the metal oxide and / or metal nitride contained in the second insulating adhesive layer 5 are the same as those in the first insulating adhesive layer 2. That is, metal oxides and metal nitrides have excellent thermal conductivity, and are preferably electrically insulating.
Examples of the metal oxide include aluminum oxide, silicon oxide, beryllium oxide, and magnesium oxide, and examples of the metal nitride include boron nitride, silicon nitride, and aluminum nitride. These may be used alone or in combination of two or more. Can be. In particular, aluminum oxide as a metal oxide is preferable because it can easily obtain an insulating adhesive layer having good electric insulation and thermal conductivity, and is easily available at a low cost. Boron nitride is preferable because it has excellent electrical insulation and thermal conductivity, and further has a small dielectric constant.
【００２５】第２の絶縁接着剤層５を構成する樹脂とし
ては、前記金属酸化物及び／又は金属窒化物を含みなが
らも、硬化状態下において、導体回路３及び回路用導体
層６との接合力に優れ、金属ベース多層回路基板８の特
性を損なわないものが選択される。このような樹脂とし
て、エポキシ樹脂、フェノール樹脂、ポリイミド樹脂の
他各種のエンジニアリングプラスチックが単独又は２種
以上を混合して用いることができるが、このうちエポキ
シ樹脂が金属同士の接合力に優れるので好ましい。特に
エポキシ樹脂のなかでも、流動性が高く、無機質充填剤
との混合性に優れるビスフェノールＡ型エポキシ樹脂、
ビスフェノールＦ型エポキシ樹脂は一層好ましい樹脂で
ある。The resin constituting the second insulating adhesive layer 5 contains the above-mentioned metal oxide and / or metal nitride, and is bonded to the conductor circuit 3 and the circuit conductor layer 6 in a cured state. Those that have excellent power and do not impair the characteristics of the metal-based multilayer circuit board 8 are selected. As such a resin, various engineering plastics other than an epoxy resin, a phenol resin, and a polyimide resin can be used alone or in combination of two or more. Among them, the epoxy resin is preferable because of its excellent bonding strength between metals. . In particular, among epoxy resins, bisphenol A type epoxy resin having high fluidity and excellent mixing with inorganic filler,
Bisphenol F type epoxy resins are more preferred resins.
【００２６】第２の絶縁接着剤層５中の金属酸化物及び
金属窒化物の合量は、４５体積％以上８５体積％以下で
あり、好ましくは４８体積％以上８０体積％以下であ
る。４５体積％未満では、第２の絶縁接着剤層５の熱伝
導率を３５×１０-4cal/cm・sec・℃以上にすることが容
易でなく、その結果、熱放散性の乏しい金属ベース多層
回路基板８しか得られない。又、８５体積％を越える場
合には、樹脂との混合において気泡を巻き込み易くな
り、その結果、耐電圧性に優れた金属ベース多層回路基
板８が得られないことがある。４８体積％以上８０体積
％以下の場合には、熱放散性と耐電圧性とに優れる金属
ベース多層回路基板が再現良く得ることができる。The total amount of the metal oxide and the metal nitride in the second insulating adhesive layer 5 is 45% by volume to 85% by volume, preferably 48% by volume to 80% by volume. If the content is less than 45% by volume, it is not easy to make the thermal conductivity of the second insulating adhesive layer 5 equal to or higher than 35 × 10 −4 cal / cm · sec · ° C. Only the multilayer circuit board 8 can be obtained. On the other hand, when the content exceeds 85% by volume, bubbles are easily entrained in mixing with the resin, and as a result, the metal-based multilayer circuit board 8 having excellent withstand voltage may not be obtained. When the content is 48% by volume or more and 80% by volume or less, a metal-based multilayer circuit board excellent in heat dissipation and withstand voltage can be obtained with good reproducibility.
【００２７】導体回路３、回路用導体層６の材質は銅、
アルミニウム、ニッケル、鉄、錫、銀、チタニウムのい
ずれか、または、これらの金属を含む合金及びそれぞれ
の金属及び／又は合金を使用したクラッド箔等が用いる
ことができる。また、この時の箔の製造方法は電解法で
も圧延法で作製したものでもよく、箔上にはＮｉめっ
き、Ｎｉ＋Ａｕめっき、はんだめっきなどの金属めっき
がほどこされていてもかまわないが、第２の絶縁接着剤
層５との接着性の点から、回路用導体層６の表面はエッ
チングやめっき等により予め粗化処理されていればさら
に好ましい。又、回路用導体層６の厚みは特に制限はな
いが一般的には５００μｍ以下が用いられる。The material of the conductor circuit 3 and the circuit conductor layer 6 is copper,
Aluminum, nickel, iron, tin, silver, or titanium, or may be clad foil which these metals were used including alloys and respective metal and / or alloy used. The method of manufacturing the foil at this time may be an electrolytic method or a rolling method. The foil may be plated with a metal such as Ni plating, Ni + Au plating, or solder plating. In view of the adhesiveness to the insulating adhesive layer 5, it is more preferable that the surface of the circuit conductor layer 6 be roughened in advance by etching, plating, or the like . The thickness of the circuit conductor layer 6 is not particularly limited, but is generally 500 μm or less.
【００２８】本発明では、金属板１として、良好な熱伝
導性を持つアルミニウムおよびアルミニウム合金、銅お
よび銅合金、鉄および鉄合金等の金属、銅／鉄−ニッケ
ル系合金、アルミニウム／鉄−ニッケル系合金等の２層
の複合材料、あるいは銅／鉄−ニッケル系合金／銅、ア
ルミニウム／鉄−ニッケル系合金／アルミニウム等の３
層の複合材料等が使用可能である。また、金属板１の厚
みとしては、特に制限はないが、０．５ｍｍ〜３．０ｍ
ｍが一般に用いられる。In the present invention, as the metal plate 1, metals such as aluminum and aluminum alloys, copper and copper alloys, iron and iron alloys, copper / iron-nickel alloys, and aluminum / iron-nickel having good thermal conductivity Composite material of two layers, such as alloys, or 3 such as copper / iron-nickel alloy / copper, aluminum / iron-nickel alloy / aluminum
Layer composites and the like can be used. The thickness of the metal plate 1 is not particularly limited, but is 0.5 mm to 3.0 m.
m is generally used.
【００２９】以下、実施例に基づき、発明をより具体的
に説明する。Hereinafter, the present invention will be described more specifically based on examples.
〔実施例１〕５１０ｍｍ×５１０ｍｍ×１．５ｍｍのア
ルミニウム板上に、窒化硼素（電気化学工業（株）製；
ＧＰ）を５３体積％含有するビスフェノールＦ型エポキ
シ樹脂（油化シェル（株）製；エピコート８０７）を絶
縁接着剤として用い、アミン系硬化剤を加え、２００μ
ｍの厚みとなるように塗布し、厚さが３５μｍの銅箔を
ラミネート法により張り合わせた。次に、この銅箔にシ
ールドパターンを形成した後に、銅箔上に前記絶縁接着
剤にアミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、さらに厚さが３５μｍの銅箔をラミネート
法により張り合わせ、加熱硬化した。次に、外層銅箔の
所定箇所にドリルによりφ０．５ｍｍの丸穴を開け、第
２の絶縁接着剤層まで切削した後に、銅めっきを施し、
バイアホールを形成した。この表面にエッチングにより
所望の回路を形成し、金属ベース多層回路基板を得た。
この金属ベース多層回路基板について、熱抵抗、耐電
圧、電子素子の動作安定性、及び生産性を以下に示す方
法で測定した。結果を表１に記載したように、良好であ
った。尚、絶縁接着剤より別途直径１０ｍｍ厚さ１ｍｍ
の円板の加熱硬化体を作製し、レーザー法熱伝導率測定
試片とした。Example 1 Boron nitride (manufactured by Denki Kagaku Kogyo KK) was placed on an aluminum plate of 510 mm × 510 mm × 1.5 mm.
Bisphenol F type epoxy resin containing 53% by volume (GP) (manufactured by Yuka Shell Co., Ltd .; Epicoat 807) was used as an insulating adhesive, and an amine-based curing agent was added.
m, and a copper foil having a thickness of 35 μm was laminated by a lamination method. Next, after forming a shield pattern on the copper foil, an amine-based curing agent was added to the insulating adhesive on the copper foil, and applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 35 μm was further laminated. They were bonded by a method and cured by heating. Next, a circular hole of φ0.5 mm was drilled at a predetermined position of the outer layer copper foil by a drill, and after cutting to the second insulating adhesive layer, copper plating was performed.
Via holes were formed. A desired circuit was formed on the surface by etching to obtain a metal-based multilayer circuit board.
For this metal-based multilayer circuit board, the thermal resistance, the withstand voltage, the operation stability of the electronic element, and the productivity were measured by the following methods. The results were good as described in Table 1. In addition, 10mm in diameter and 1mm in thickness separately from the insulating adhesive
A heat-cured body of the disk was prepared and used as a test piece for measuring thermal conductivity by a laser method.
【００３０】＜熱抵抗の測定方法＞金属ベース多層回路
基板の多層化した部分或いは導体回路部分を４０ｍｍ×
３０ｍｍに切りとり試験片とする。試験片をエッチング
して、その中心付近に大きさ１０ｍｍ×１４ｍｍのパッ
ド部を形成し、この部分にトランジスター（２ＳＣ２２
３３；ＴＯ２２０タイプ；株式会社東芝製）をはんだ付
けする。基板の裏面を室温に冷却しつつ、トランジスタ
を動作させ、第１及び第２の絶縁接着剤層或いは第１の
絶縁接着剤層のみを挟んでいるトランジスター裏側と基
板の温度を測定し、両者の温度差とトランジスタの消費
電力（コレクター損失）から熱抵抗を算出する（デンカ
ＨＩＴＴプレートカタログ参照）。<Method of Measuring Thermal Resistance> A multilayered portion or a conductive circuit portion of a metal-based multilayer circuit board was measured at 40 mm ×
Cut to 30 mm to make a test piece. The test piece was etched to form a pad portion having a size of 10 mm × 14 mm near the center thereof, and a transistor (2SC22
33; TO220 type; manufactured by Toshiba Corporation). The transistor is operated while the back surface of the substrate is cooled to room temperature, and the temperature of the substrate and the back side of the transistor sandwiching only the first and second insulating adhesive layers or only the first insulating adhesive layer are measured. The thermal resistance is calculated from the temperature difference and the power consumption (collector loss) of the transistor (refer to the Denka HITT plate catalog).
【００３１】＜耐電圧の測定方法＞金属ベース多層回路
基板の第１の絶縁接着剤層上に配置された導体回路をベ
タパターンとし、第２の絶縁接着剤層上の回路用導体或
いは導体回路をエッチングしてφ２０ｍｍの円形パター
ンを１０ｍｍ間隔で３×３個形成した。尚、中心部に位
置する前記円形パターンはバイアホールにより前記導体
回路と電気的に接続した。上記金属ベース多層回路基板
について、ＪＩＳ Ｃ ２１１０に規定された段階昇圧
法により、中心部の円形パターンと他の円形パターン間
の耐電圧を測定した。<Method of Measuring Withstand Voltage> A conductor circuit arranged on a first insulating adhesive layer of a metal-based multilayer circuit board is used as a solid pattern, and a circuit conductor or a conductor circuit on a second insulating adhesive layer is formed. Was etched to form 3 × 3 circular patterns of φ20 mm at intervals of 10 mm. The circular pattern located at the center was electrically connected to the conductor circuit by a via hole. With respect to the metal-based multilayer circuit board, the withstand voltage between the central circular pattern and the other circular patterns was measured by the step-up method defined in JIS C 2110.
【００３２】＜パワー電子素子の動作安定性の評価方法
＞日立製作所製ｐ−ｍｏｓ−ＦＥＴ（２ＳＫ２１７４
Ｓ）を回路導体或いは導体回路上に２ｍｍ間隔で３個組
み込んだモジュールを作製し、１００℃の環境下で素子
１個当たり１０Ｗの消費電力となるようにしながら９６
時間連続運転し、誤動作の有無を評価する。誤動作が発
生しなければ、消費電力を更に１０Ｗ加えて再度評価す
る。以降同様に消費電力を増加し、誤動作の発生した時
の消費電力量にてパワー電子素子の動作安定性を評価す
る。<Method of Evaluating Operation Stability of Power Electronic Element> p-mos-FET (2SK2174, manufactured by Hitachi, Ltd.)
A module was prepared in which three S) were incorporated on a circuit conductor or a conductor circuit at 2 mm intervals, and a power consumption of 10 W per element was obtained in an environment of 100 ° C. while 96 modules were used.
Operate continuously for a time and evaluate the presence or absence of malfunction. If no malfunction occurs, the power consumption is further increased by 10 W and the evaluation is performed again. Thereafter, similarly, the power consumption is increased, and the operation stability of the power electronic element is evaluated based on the power consumption when a malfunction occurs.
【００３３】＜生産性の評価方法＞名刺サイズ（９０ｍ
ｍ×５５ｍｍ）の金属ベース多層回路基板１０，０００
枚を製造するのに要した時間で評価した。<Productivity Evaluation Method> Business card size (90 m
m × 55 mm) metal-based multilayer circuit board 10,000
The evaluation was based on the time required to produce a sheet.
【００３４】[0034]
【表１】 [Table 1]
【００３５】〔実施例２〕絶縁接着剤に酸化アルミニウ
ム（昭和電工（株）製：Ａ−４２−２）を５４体積％含
有するシリコーン樹脂（東レダウコーニングシリコーン
（株）製；ＳＥ１８８０）を用いたこと以外は、実施例
１と同一の操作をして得た金属ベース多層回路基板につ
いて、熱抵抗、耐電圧、電子素子の動作安定性、及び生
産性を同一の方法で測定した。結果を表１に記載したよ
うに、良好であった。Example 2 A silicone resin (manufactured by Toray Dow Corning Silicone Co., Ltd .; SE1880) containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) was used as the insulating adhesive. Except for the above, thermal resistance, withstand voltage, operation stability of electronic elements, and productivity were measured by the same method for the metal-based multilayer circuit board obtained by performing the same operation as in Example 1. The results were good as described in Table 1.
【００３６】〔実施例３〕絶縁接着剤に酸化アルミニウ
ム（昭和電工（株）製：Ａ−４２−２）を５４体積％含
有するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を用いたこと以外は、実
施例１と同一の操作をして得た金属ベース多層回路基板
について、熱抵抗、耐電圧、電子素子の動作安定性、及
び生産性を測定した。結果は、表１に記載したように、
良好であった。Example 3 A bisphenol A type epoxy resin containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) as an insulating adhesive (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) The thermal resistance, the withstand voltage, the operation stability of the electronic element, and the productivity were measured for the metal-based multilayer circuit board obtained by performing the same operation as in Example 1 except that the above-mentioned method was used. The results, as described in Table 1,
It was good.
【００３７】〔実施例４〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５４体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが５μｍの銅箔をラミネート法により
張り合わせ、加熱硬化した。次に、この銅箔をエッチン
グしてシールドパターンを形成した後、銅箔上に前記の
絶縁接着剤にアミン系硬化剤を加え２００μｍの厚みと
なるように塗布し、厚さが５μｍの銅箔をラミネート法
により張り合わせた後、加熱硬化した。次に、外層銅箔
の所定箇所にエッチングによりφ０．５ｍｍの丸穴を開
け、穴開き部にレーザー光線を照射して第２の絶縁接着
剤層の一部を切削した後に、銅めっきを施して、バイア
ホールを形成した。次に、外層銅箔をエッチングして所
望の回路を形成することで金属ベース多層回路基板を得
た。この金属ベース多層回路基板について、熱抵抗、耐
電圧、電子素子の動作安定性、及び生産性を測定した。
結果は、表１に記載したとおり、良好であった。Example 4 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 5 μm was adhered by a laminating method and cured by heating. Next, after etching this copper foil to form a shield pattern, an amine-based curing agent was added to the above-mentioned insulating adhesive on the copper foil, and applied so as to have a thickness of 200 μm. Were laminated by a laminating method and then cured by heating. Next, a circular hole having a diameter of 0.5 mm is formed in a predetermined portion of the outer layer copper foil by etching, and a portion of the second insulating adhesive layer is cut by irradiating the hole with a laser beam, followed by copper plating. , Via holes were formed. Next, a desired circuit was formed by etching the outer layer copper foil, thereby obtaining a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity.
The results were good as described in Table 1.
【００３８】〔実施例５〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５４体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが１５０μｍの銅箔をラミネート法に
より張り合わせ、加熱硬化した。次に、この銅箔をエッ
チングしてシールドパターンを形成した後に、銅箔上に
前記の絶縁接着剤にアミン系硬化剤を加え、２００μｍ
の厚みとなるように塗布し、厚さが１５０μｍの銅箔を
ラミネート法により張り合わせ、加熱硬化した。次に、
外層銅箔の所定箇所にエッチングによりφ０．５ｍｍの
丸穴を開け、穴開き部にレーザー光線を照射し、第２の
絶縁接着剤層の一部を切削した後に、銅めっきを施し、
バイアホールを形成した。更に、外層銅箔をエッチング
して所望の回路を形成し、金属ベース多層回路基板を得
た。この金属ベース多層回路基板について、熱抵抗、耐
電圧、電子素子の動作安定性、及び生産性を測定した。
結果は表１に記載したとおり、良好であった。Example 5 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 150 μm was laminated by a laminating method and cured by heating. Next, after the copper foil was etched to form a shield pattern, an amine-based curing agent was added to the insulating adhesive on the copper foil to form a shield pattern of 200 μm.
, And a copper foil having a thickness of 150 μm was adhered by a laminating method and cured by heating. next,
A round hole of φ0.5 mm is opened by etching in a predetermined portion of the outer layer copper foil, a laser beam is irradiated on the hole, and after a part of the second insulating adhesive layer is cut, copper plating is performed.
Via holes were formed. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity.
The results were good as described in Table 1.
【００３９】〔実施例６〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５６体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが３５μｍの銅箔をラミネート法によ
り張り合わせ、加熱硬化した。次に、この銅箔をエッチ
ングしてシールドパターンを形成した後に、銅箔上に前
記の酸化アルミニウムを５４体積％含有するビスフェノ
ールＡ型エポキシ樹脂（油化シェル（株）製；エピコー
ト８２８）を絶縁接着剤として用い、アミン系硬化剤を
加え、２５０μｍの厚みとなるように塗布し、厚さが３
５μｍの銅箔をラミネート法により張り合わせ、加熱硬
化した。次に、外層銅箔の所定箇所にエッチングにより
φ０．５ｍｍの丸穴を開け、穴開き部にレーザー光線を
照射し、第２の絶縁接着剤層の一部を切削した後に、銅
めっきを施し、バイアホールを形成した。更に、外層銅
箔をエッチングして所望の回路を形成し、金属ベース多
層回路基板を得た。この金属ベース多層回路基板につい
て、熱抵抗、耐電圧、電子素子の動作安定性、及び生産
性を測定した。結果は表１に記載したように良好であっ
た。Example 6 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied to a thickness of 200 μm, and a copper foil having a thickness of 35 μm was adhered by a laminating method and cured by heating. Next, after the copper foil was etched to form a shield pattern, a bisphenol A type epoxy resin (manufactured by Yuka Shell Co .; Epicoat 828) containing 54% by volume of aluminum oxide was insulated on the copper foil. Used as an adhesive, an amine-based curing agent was added, and applied so as to have a thickness of 250 μm.
A 5 μm copper foil was adhered by a lamination method and cured by heating. Next, a circular hole having a diameter of 0.5 mm is formed in a predetermined portion of the outer layer copper foil by etching, a laser beam is applied to the hole, and a portion of the second insulating adhesive layer is cut, and then copper plating is performed. Via holes were formed. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity. The results were good as described in Table 1.
【００４０】〔実施例７〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５６体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２０μｍの厚みとなるよう
に塗布し、厚さが３５μｍの銅箔をラミネート法により
張り合わせ、加熱硬化した。次に、この銅箔をエッチン
グしてシールドパターンを形成した後に、銅箔上に前記
の酸化アルミニウムを５４体積％含有するビスフェノー
ルＡ型エポキシ樹脂（油化シェル（株）製；エピコート
８２８）を絶縁接着剤として用い、アミン系硬化剤を加
え、２５０μｍの厚みとなるように塗布し、さらに厚さ
が３５μｍの銅箔をラミネート法により張り合わせ、加
熱硬化した。次に、外層銅箔の所定箇所にエッチングに
よりφ０．５ｍｍの丸穴を開け、穴開き部にレーザー光
線を照射し、第２の絶縁接着剤層の一部を切削した後
に、銅めっきを施し、バイアホールを形成した。更に、
外層銅箔をエッチングして所望の回路を形成し、金属ベ
ース多層回路基板を得た。この金属ベース多層回路基板
について、熱抵抗、耐電圧、電子素子の動作安定性、及
び生産性を測定した。結果は表１に記載したように良好
であった。Example 7 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. An amine-based curing agent was added, used as an adhesive, applied to a thickness of 20 μm, and a copper foil having a thickness of 35 μm was laminated by a lamination method and cured by heating. Next, after the copper foil was etched to form a shield pattern, a bisphenol A type epoxy resin (manufactured by Yuka Shell Co .; Epicoat 828) containing 54% by volume of aluminum oxide was insulated on the copper foil. An amine-based curing agent was added thereto, and applied so as to have a thickness of 250 μm. A copper foil having a thickness of 35 μm was laminated by a laminating method and cured by heating. Next, a circular hole having a diameter of 0.5 mm is formed in a predetermined portion of the outer layer copper foil by etching, a laser beam is applied to the hole, and a portion of the second insulating adhesive layer is cut, and then copper plating is performed. Via holes were formed. Furthermore,
The desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity. The results were good as described in Table 1.
【００４１】〔実施例８〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５６体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが３５μｍの銅箔をラミネート法によ
り張り合わせ、加熱硬化した。次に、この銅箔をエッチ
ングしてシールドパターンを形成した後に、銅箔上に前
記の絶縁接着剤をアミン系硬化剤を加え、２００μｍの
厚みとなるように塗布し、さらに厚さが３５μｍの銅箔
をラミネート法により張り合わせ、加熱硬化した。次
に、外層銅箔の所定箇所をエッチングしてφ０．５ｍｍ
の丸穴を開け、穴開き部にレーザー光線を照射し、第２
の絶縁接着剤層の一部を切削した後に、銅めっきを施
し、バイアホールを形成した。さらに外層銅箔をエッチ
ングして所望の回路を形成し、金属ベース多層回路基板
を得た。この金属ベース多層回路基板について、熱抵
抗、耐電圧、電子素子の動作安定性、及び生産性を測定
した。結果は、表１に記載したように、良好であった。Example 8 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied to a thickness of 200 μm, and a copper foil having a thickness of 35 μm was adhered by a laminating method and cured by heating. Next, after etching the copper foil to form a shield pattern, the above-mentioned insulating adhesive was applied to the copper foil so as to have a thickness of 200 μm by adding an amine-based curing agent, and further having a thickness of 35 μm. The copper foil was laminated by a lamination method and cured by heating. Next, a predetermined portion of the outer layer copper foil was etched to
Drill a round hole and irradiate the hole with a laser beam.
After cutting a part of the insulating adhesive layer, copper plating was performed to form via holes. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity. The results were good, as described in Table 1.
【００４２】〔実施例９〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５６体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが３５μｍの銅箔をラミネート法によ
り張り合わせ、加熱硬化した。次に、銅箔をエッチング
してシールドパターンを形成した後に、銅箔上に前記の
絶縁接着剤をアミン系硬化剤を加え、４０μｍの厚みと
なるように塗布し、厚さが３５μｍの銅箔をラミネート
法により張り合わせ、加熱硬化した。次に、外層銅箔の
所定箇所をエッチングしてφ０．５ｍｍの丸穴を開け、
穴開き部にレーザー光線を照射し、第２絶縁接着剤層の
一部を切削した後に、銅めっきを施し、バイアホールを
形成した。さらに外層銅箔をエッチングして所望の回路
を形成し、金属ベース多層回路基板を得た。この金属ベ
ース多層回路基板について、熱抵抗、耐電圧、電子素子
の動作安定性、及び生産性を測定した。結果は良好であ
り、表１に記載した。Embodiment 9 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied to a thickness of 200 μm, and a copper foil having a thickness of 35 μm was adhered by a laminating method and cured by heating. Next, after the copper foil is etched to form a shield pattern, the above-mentioned insulating adhesive is applied to the copper foil so as to have a thickness of 40 μm by adding an amine-based curing agent, and the copper foil having a thickness of 35 μm is formed. Were laminated by a laminating method and cured by heating. Next, a predetermined hole in the outer layer copper foil was etched to make a round hole of φ0.5 mm,
A laser beam was applied to the perforated portion to cut a part of the second insulating adhesive layer, followed by copper plating to form a via hole. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity. The results were good and are described in Table 1.
【００４３】〔実施例１０〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を８０体積％含有
するビスフェノールＦ型エポキシ樹脂（油化シェル
（株）製：エピコート８０７）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが３５μｍの銅箔をラミネート法によ
り張り合わせた。次に、銅箔をエッチングしてシールド
パターンを形成した後に、銅箔上に前記の絶縁接着剤を
アミン系硬化剤を加え、２００μｍの厚みとなるように
塗布し、厚さが３５μｍの銅箔をラミネート法により張
り合わせ、加熱硬化した。次に、外層銅箔の所定箇所を
ドリルによりφ０．５ｍｍの丸穴を開け、第２絶縁接着
剤層の深さまで切削した後に、銅めっきを施し、バイア
ホールを形成した。さらに外層銅箔をエッチングして所
望の回路を形成し、金属ベース多層回路基板を得た。こ
の金属ベース多層回路基板について、熱抵抗、耐電圧、
電子素子の動作安定性、及び生産性を測定した。結果
は、表１に記載したように良好であった。Example 10 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol F-type epoxy resin containing 80% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 807, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied to a thickness of 200 μm, and a copper foil having a thickness of 35 μm was bonded by a lamination method. Next, after the copper foil is etched to form a shield pattern, the above-mentioned insulating adhesive is applied on the copper foil so as to have a thickness of 200 μm by adding an amine-based curing agent, and the copper foil having a thickness of 35 μm is formed. Were laminated by a laminating method and cured by heating. Next, a predetermined hole in the outer layer copper foil was drilled into a round hole of φ0.5 mm, cut to the depth of the second insulating adhesive layer, and then plated with copper to form a via hole. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. About this metal-based multilayer circuit board, thermal resistance, withstand voltage,
The operation stability and productivity of the electronic device were measured. The results were good as described in Table 1.
【００４４】〔実施例１１〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、窒化珪素（電気化学
工業工業（株）製；ＳＮ−９）を４８体積％含有するビ
スフェノールＦ型エポキシ樹脂（油化シェル（株）製：
エピコート８０７）を絶縁接着剤として用い、アミン系
硬化剤を加え、２００μｍの厚みとなるように塗布し、
厚さが３５μｍの銅箔をラミネート法により張り合わせ
た。次に、銅箔をエッチングしてシールドパターンを形
成した後に、銅箔上に酸化アルミニウム（昭和電工
（株）製；Ａ−４２−２）を５６体積％含有するビスフ
ェノールＦ型エポキシ樹脂を絶縁接着剤として用い、ア
ミン系硬化剤を加え、２００μｍの厚みとなるように塗
布し、厚さが３５μｍの銅箔をラミネート法により張り
合わせ、加熱硬化した。次に、外層銅箔の所定箇所をド
リルによりφ０．５ｍｍの丸穴を開け、第２の絶縁接着
剤層の部分まで切削した後に、銅めっきを施し、バイア
ホールを形成した。さらに外層銅箔をエッチングして所
望の回路を形成し、金属ベース多層回路基板を得た。こ
の金属ベース多層回路基板について、熱抵抗、耐電圧、
電子素子の動作安定性、及び生産性を測定した。結果
は、表１に記載したように良好であった。Embodiment 11 510 mm × 510 mm ×
Bisphenol F type epoxy resin (manufactured by Yuka Shell Co., Ltd.) containing 48% by volume of silicon nitride (manufactured by Denki Kagaku Kogyo Kogyo KK; SN-9) on a 1.5 mm aluminum plate:
Epicoat 807) was used as an insulating adhesive, an amine-based curing agent was added, and applied to a thickness of 200 μm.
A copper foil having a thickness of 35 μm was laminated by a lamination method. Next, after etching the copper foil to form a shield pattern, a bisphenol F-type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) is insulated on the copper foil. As an agent, an amine-based curing agent was added, applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 35 μm was adhered by a lamination method and cured by heating. Next, a predetermined hole of the outer layer copper foil was drilled into a round hole having a diameter of 0.5 mm and cut to a portion of the second insulating adhesive layer, and then plated with copper to form a via hole. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. About this metal-based multilayer circuit board, thermal resistance, withstand voltage,
The operation stability and productivity of the electronic device were measured. The results were good as described in Table 1.
【００４５】〔実施例１２〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製；Ａ−４２−２）を５６体積％含有
するビスフェノールＦ型エポキシ樹脂（油化シェル
（株）製：エピコート８０７）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが３５μｍの銅箔をラミネート法によ
り張り合わせた。次に、銅箔をエッチングしてシールド
パターンを形成した後に、銅箔上に窒化珪素（電気化学
工業（株）製；ＳＮ−９）を４８体積％含有するビスフ
ェノールＦ型エポキシ樹脂を絶縁接着剤として用い、ア
ミン系硬化剤を加え、２００μｍの厚みとなるように塗
布し、厚さが３５μｍの銅箔をラミネート法により張り
合わせ、加熱硬化した。次に、外層銅箔の所定箇所をド
リルによりφ０．５ｍｍの丸穴を開け、第２の絶縁接着
剤層の部分まで切削した後に、銅めっきを施し、バイア
ホールを形成した。さらに外層銅箔をエッチングして所
望の回路を形成し、金属ベース多層回路基板を得た。こ
の金属ベース多層回路基板について、熱抵抗、耐電圧、
電子素子の動作安定性、及び生産性を測定した。結果
は、表１に記載したように良好であった。Embodiment 12 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol F type epoxy resin containing 56% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 807, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied to a thickness of 200 μm, and a copper foil having a thickness of 35 μm was bonded by a lamination method. Next, after etching the copper foil to form a shield pattern, a bisphenol F type epoxy resin containing 48% by volume of silicon nitride (manufactured by Denki Kagaku Kogyo Co., Ltd .; SN-9) is coated on the copper foil with an insulating adhesive. An amine-based curing agent was added, and the mixture was applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 35 μm was adhered by a lamination method and cured by heating. Next, a predetermined hole of the outer layer copper foil was drilled into a round hole having a diameter of 0.5 mm and cut to a portion of the second insulating adhesive layer, and then plated with copper to form a via hole. Further, a desired circuit was formed by etching the outer layer copper foil to obtain a metal-based multilayer circuit board. About this metal-based multilayer circuit board, thermal resistance, withstand voltage,
The operation stability and productivity of the electronic device were measured. The results were good as described in Table 1.
【００４６】〔比較例１〕基材の厚みが６０μｍで、３
５μｍ厚の所望の回路を前記基材の両面に有するガラス
エポキシ樹脂回路基板に、ドリルにより所定の箇所にφ
０．５ｍｍの貫通孔を開けた後、銅めっきを施し、バイ
アホールを形成した。また、両面の銅箔をエッチングし
て所望の回路を形成した。次に、５１０ｍｍ×５１０ｍ
ｍ×１．５ｍｍのアルミニウム板上にガラスエポキシプ
レプリグを厚さ１００μｍとなるように塗布し、前記ガ
ラスエポキシ樹脂回路基板を配置し加熱硬化して、金属
ベース多層回路基板を作製した。この金属ベース多層回
路基板について、熱抵抗、耐電圧、電子素子の動作安定
性、及び生産性を実施例１と同一の方法で測定した。そ
の結果、熱抵抗は３．８℃／Ｗ、パワー電子素子の動作
安定性は２０Ｗであり、不良であった。Comparative Example 1 When the thickness of the substrate was 60 μm and
On a glass epoxy resin circuit board having a desired circuit of 5 μm thickness on both sides of the base material, a φ
After opening a 0.5 mm through hole, copper plating was performed to form a via hole. Further, a desired circuit was formed by etching the copper foil on both sides. Next, 510mm x 510m
A glass epoxy prepreg was applied to an m × 1.5 mm aluminum plate so as to have a thickness of 100 μm, and the glass epoxy resin circuit board was arranged and heated and cured to produce a metal-based multilayer circuit board. For this metal-based multilayer circuit board, the thermal resistance, the withstand voltage, the operation stability of the electronic element, and the productivity were measured in the same manner as in Example 1. As a result, the thermal resistance was 3.8 ° C./W, and the operation stability of the power electronic device was 20 W, which was poor.
【００４７】〔比較例２〕厚さ３５μｍの銅箔からなる
所望の回路を両面に有し、基材が６０μｍ厚さのガラス
エポキシ樹脂からなるガラスエポキシ樹脂回路基板（松
下電工（株）製；Ｒ−１７６６）を用意し、ドリルによ
り所定の箇所にφ０．５ｍｍの貫通孔を開けた後、銅め
っきを施し、バイアホールを形成した。また、両面の銅
箔をエッチングして所望の回路を形成した。次に、５１
０ｍｍ×５１０ｍｍ×１．５ｍｍのアルミニウム板上
に、窒化珪素（電気化学工業（株）製；ＳＮ−９）を５
７体積％含有するビスフェノールＦ型エポキシ樹脂（油
化シェル（株）製；エピコート８０７）を絶縁接着剤と
して用い、アミン系硬化剤を加え、２００μｍの厚みと
なるように塗布し、前記ガラスエポキシ樹脂回路基板を
ラミネート法により張り合わせた、加熱硬化して金属ベ
ース多層回路基板を作製した。上記金属ベース多層回路
基板について、熱抵抗、耐電圧、電子素子の動作安定
性、及び生産性を測定した。その結果、表１に記載した
ように、熱抵抗、耐電圧、電子素子の動作安定性は良好
であったが、生産性が低くく不良であった。[Comparative Example 2] A glass epoxy resin circuit board (manufactured by Matsushita Electric Works, Ltd.) having a desired circuit made of a copper foil having a thickness of 35 μm on both sides and a base material made of a glass epoxy resin having a thickness of 60 μm; R-1766) was prepared, and a through hole having a diameter of 0.5 mm was formed in a predetermined location by a drill, and then, copper plating was performed to form a via hole. Further, a desired circuit was formed by etching the copper foil on both sides. Next, 51
Silicon nitride (manufactured by Denki Kagaku Kogyo KK; SN-9) was placed on a 0 mm × 510 mm × 1.5 mm aluminum plate.
A bisphenol F-type epoxy resin containing 7% by volume (manufactured by Yuka Shell Co., Ltd .; Epicoat 807) was used as an insulating adhesive, an amine-based curing agent was added, and the mixture was applied so as to have a thickness of 200 μm. The circuit boards were laminated by a laminating method and cured by heating to produce a metal-based multilayer circuit board. With respect to the metal-based multilayer circuit board, thermal resistance, withstand voltage, operation stability of electronic elements, and productivity were measured. As a result, as described in Table 1, the thermal resistance, the withstand voltage, and the operation stability of the electronic element were good, but the productivity was low and the product was poor.
【００４８】〔実施例１３〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、窒化硼素（電気化学
工業（株）製；ＧＰ）を５３体積％含有するビスフェノ
ールＡ型エポキシ樹脂（油化シェル（株）製；エピコー
ト８２８）を絶縁接着剤として用い、アミン系硬化剤を
加え、２００μｍの厚みとなるように塗布し、厚さが３
５μｍの銅箔をラミネート法により張り合わせた。次
に、この銅箔に内層回路を形成した後に、その上の所定
の部分のみに前記絶縁接着剤をアミン系硬化剤を加え、
２００μｍの厚みとなるように塗布し、さらに厚さが３
５μｍの銅箔をラミネート法により張り合わせ、加熱硬
化した。次に、直下に銅箔を有する外層銅箔の所定箇所
にドリルによりφ０．５ｍｍの丸穴を開け、第２絶縁接
着剤層まで切削した後に、銅めっきを施し、バイアホー
ルを形成した。この表面にエッチングにより所望の外層
回路を形成し、内層回路の一部が露出した金属ベース多
層回路基板を得た。前記金属ベース多層回路基板につい
て、熱抵抗、耐電圧、電子素子の動作安定性、及び生産
性を測定した。結果は表２に記載した通り、良好であっ
た。Example 13 510 mm × 510 mm ×
A bisphenol A type epoxy resin (manufactured by Yuka Shell Co., Ltd .; Epicoat 828) containing 53% by volume of boron nitride (manufactured by Denki Kagaku Kogyo KK; GP) was used as an insulating adhesive on a 1.5 mm aluminum plate. Add an amine-based curing agent and apply it to a thickness of 200 μm.
A 5 μm copper foil was laminated by a lamination method. Next, after forming an inner layer circuit on the copper foil, the insulating adhesive is added to only a predetermined portion thereon with an amine-based curing agent,
Apply to a thickness of 200 μm, and then apply a thickness of 3
A 5 μm copper foil was adhered by a lamination method and cured by heating. Next, a circular hole having a diameter of 0.5 mm was drilled at a predetermined position of the outer layer copper foil having a copper foil immediately below, and after cutting to the second insulating adhesive layer, copper plating was performed to form a via hole. A desired outer layer circuit was formed on the surface by etching to obtain a metal-based multilayer circuit board in which a part of the inner layer circuit was exposed. With respect to the metal-based multilayer circuit board, thermal resistance, withstand voltage, operation stability of electronic elements, and productivity were measured. The results were good as described in Table 2.
【００４９】[0049]
【表２】 [Table 2]
【００５０】〔実施例１４〕絶縁接着剤に酸化アルミニ
ウム（昭和電工（株）製：Ａ−４２−２）を５４体積％
含有するシリコーン樹脂（東レダウコーニングシリコー
ン（株）製；ＳＥ１８８０）を用いたこと以外は、実施
例１３と同一の操作をして得た内層回路の一部が露出し
た金属ベース多層回路基板について、熱抵抗、耐電圧、
電子素子の動作安定性、及び生産性を同様の方法で測定
した。結果は表２に記載したように良好であった。Example 14 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) was used as an insulating adhesive.
Except for using the contained silicone resin (manufactured by Toray Dow Corning Silicone Co., Ltd .; SE1880), a metal-based multilayer circuit board obtained by performing the same operation as in Example 13 and exposing a part of the inner layer circuit, Thermal resistance, withstand voltage,
The operation stability and productivity of the electronic device were measured in the same manner. The results were good as described in Table 2.
【００５１】〔実施例１５〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５４体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが５μｍの銅箔をラミネート法により
張り合わせ、加熱硬化した。次に、この銅箔をエッチン
グして内層回路を形成した後、その上の所定の部分のみ
に前述の絶縁接着剤をアミン系硬化剤を加え、２００μ
ｍの厚みとなるように塗布し、厚さが５μｍの銅箔をラ
ミネート法により張り合わせた後、加熱硬化した。次
に、直下に銅箔を有する外層銅箔の所定箇所にエッチン
グによりφ０．５ｍｍの丸穴を開け、穴開き部にレーザ
ー光線を照射し、第２絶縁接着剤層上の絶縁層を切削し
た後に、銅めっきを施して、バイアホールを形成した。
次に、外層銅箔をエッチングして所望の外層回路を形成
し、内層回路の一部が露出した金属ベース多層回路基板
を得た。この金属ベース多層回路基板について、熱抵
抗、耐電圧、電子素子の動作安定性、及び生産性を測定
した。結果は表２に記載した通り、良好であった。Embodiment 15 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 5 μm was adhered by a laminating method and cured by heating. Next, after the copper foil was etched to form an inner layer circuit, the above-mentioned insulating adhesive was added to only a predetermined portion of the inner layer circuit with the amine-based curing agent, followed by 200 μm.
m, and a copper foil having a thickness of 5 μm was laminated by a laminating method, and then cured by heating. Next, a predetermined hole of the outer copper foil having a copper foil immediately below is drilled into a circular hole of φ0.5 mm by etching, a laser beam is applied to the hole, and the insulating layer on the second insulating adhesive layer is cut. Then, copper plating was performed to form via holes.
Next, a desired outer layer circuit was formed by etching the outer layer copper foil, and a metal-based multilayer circuit board in which a part of the inner layer circuit was exposed was obtained. This metal-based multilayer circuit board was measured for thermal resistance, withstand voltage, operation stability of electronic elements, and productivity. The results were good as described in Table 2.
【００５２】〔実施例１６〕５１０ｍｍ×５１０ｍｍ×
１．５ｍｍのアルミニウム板上に、酸化アルミニウム
（昭和電工（株）製：Ａ−４２−２）を５４体積％含有
するビスフェノールＡ型エポキシ樹脂（油化シェル
（株）製：エピコート８２８）を絶縁接着剤として用
い、アミン系硬化剤を加え、２００μｍの厚みとなるよ
うに塗布し、厚さが１５０μｍの銅箔をラミネート法に
より張り合わせ、加熱硬化した。次に、この銅箔をエッ
チングして内層回路を形成した後、その上の所定の部分
のみに前述の絶縁接着剤をアミン系硬化剤を加え、２０
０μｍの厚みとなるように塗布し、厚さが１５０μｍの
銅箔をラミネート法により張り合わせた後、加熱硬化し
た。次に、直下に銅箔を有する外層銅箔の所定箇所にエ
ッチングによりφ０．５ｍｍの丸穴を開け、穴開き部に
レーザー光線を照射し、第２絶縁接着剤層上の絶縁層を
切削した後に、銅めっきを施して、バイアホールを形成
した。更に、外層銅箔をエッチングして所望の外層回路
を形成し、内層回路の一部が露出した金属ベース多層回
路基板を得た。この金属ベース多層回路基板について、
熱抵抗、耐電圧、電子素子の動作安定性、及び生産性を
測定した。結果は表２に記載した通り、良好であった。Embodiment 16 510 mm × 510 mm ×
On a 1.5 mm aluminum plate, a bisphenol A type epoxy resin containing 54% by volume of aluminum oxide (A-42-2, manufactured by Showa Denko KK) (Epicoat 828, manufactured by Yuka Shell Co., Ltd.) is insulated. The adhesive was used as an adhesive, an amine-based curing agent was added, the coating was applied so as to have a thickness of 200 μm, and a copper foil having a thickness of 150 μm was laminated by a laminating method and cured by heating. Next, after the copper foil is etched to form an inner layer circuit, the above-mentioned insulating adhesive is added to only a predetermined portion of the inner layer circuit with the amine-based curing agent.
It was applied so as to have a thickness of 0 μm, and a copper foil having a thickness of 150 μm was laminated by a laminating method, and then cured by heating. Next, a predetermined hole of the outer copper foil having a copper foil immediately below is drilled into a circular hole of φ0.5 mm by etching, a laser beam is applied to the hole, and the insulating layer on the second insulating adhesive layer is cut. Then, copper plating was performed to form via holes. Further, a desired outer layer circuit was formed by etching the outer layer copper foil, and a metal-based multilayer circuit board in which a part of the inner layer circuit was exposed was obtained. About this metal-based multilayer circuit board,
The thermal resistance, the withstand voltage, the operation stability of the electronic device, and the productivity were measured. The results were good as described in Table 2.
【００５３】[0053]
【発明の効果】本発明によれば、金属板に金属酸化物及
び／又は金属窒化物を含有する絶縁接着剤を介して回路
基板を接合した構造の金属ベース多層回路基板におい
て、一層熱抵抗が小さく、熱放散性に優れ、耐ノイズ性
と耐電圧性に優れる金属ベース多層回路基板を生産性良
く提供することができる。According to the present invention, in a metal-based multilayer circuit board having a structure in which a circuit board is joined to a metal plate via an insulating adhesive containing a metal oxide and / or a metal nitride, the thermal resistance is further reduced. A metal-based multilayer circuit board that is small, has excellent heat dissipation, and has excellent noise resistance and voltage resistance can be provided with high productivity.
【図１】 本発明の金属ベース多層回路基板に用いる金
属ベース回路基板の一例を示す図。FIG. 1 is a diagram showing an example of a metal-based circuit board used for a metal-based multilayer circuit board of the present invention.
【図２】 本発明の製造法での第（１）工程後の金属ベ
ース回路基板の一例を示す図。FIG. 2 is a view showing an example of a metal-based circuit board after a first step (1) in the manufacturing method of the present invention.
【図３】 本発明の製造法での第（２）工程の途中を示
す一例の図で、回路用導体層のみが開孔されている状態
を示す図。FIG. 3 is a view of an example showing a middle of a step (2) in the manufacturing method of the present invention, showing a state in which only a circuit conductor layer is opened.
【図４】 本発明の製造法での第（２）工程の途中を示
す一例の図で、回路用導体層と第２の絶縁接着剤層が開
孔されている状態を示す図。FIG. 4 is a view of an example showing the middle of the step (2) in the manufacturing method of the present invention, showing a state in which the circuit conductor layer and the second insulating adhesive layer are opened.
【図５】 本発明の製造法での第（２）工程後を示す一
例の図で、バイアホールが形成されている状態を示す
図。FIG. 5 is a view of an example showing a state after the step (2) in the manufacturing method of the present invention, in which a via hole is formed.
【図６】 本発明の製造法での第（３）工程後を示す一
例の図で、本発明の金属ベース多層回路基板の一例であ
る。FIG. 6 is an example of a view after the step (3) in the manufacturing method of the present invention, which is an example of the metal-based multilayer circuit board of the present invention.
１ 金属板 ２ 第１の絶縁接着剤層 ３ 導体回路 ４ 金属ベース回路基板 ５ 第２の絶縁接着剤層 ６ 回路用導体層 ７ バイアホール ８ 金属ベース多層回路基板 REFERENCE SIGNS LIST 1 metal plate 2 first insulating adhesive layer 3 conductive circuit 4 metal base circuit board 5 second insulating adhesive layer 6 circuit conductive layer 7 via hole 8 metal based multilayer circuit board
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０５Ｋ 3/40 Ｈ０５Ｋ 3/40 Ｚ 9/00 9/00 Ｒ (56)参考文献 特開 昭61−216391（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H05K 3/46 H05K 3/40 H05K 9/00 H05K 1/05──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification symbol FI H05K 3/40 H05K 3/40 Z 9/00 9/00 R (56) References JP-A-61-216391 (JP, A) (58) Field surveyed (Int.Cl. 6 , DB name) H05K 3/46 H05K 3/40 H05K 9/00 H05K 1/05
Claims (4)
金属窒化物を４５体積％以上８５体積％以下含有する第
１の絶縁接着剤層を介して導体回路を形成してなる金属
ベース回路基板の前記導体回路上に第２の絶縁接着剤層
を介して回路用導体層を接合する工程、 （２）前記導体回路と回路用導体層を電気的に接続する
ためのバイアホールを形成する工程、 （３）前記回路用導体層に回路を形成する工程、 を経ることを特徴とする金属ベース多層回路基板の製造
法。(1) A metal oxide and / or metal oxide on a metal plate.
A second insulating adhesive layer is formed on the conductive circuit of the metal-based circuit board formed with the first insulating adhesive layer containing 45% by volume or more and 85% by volume or less of metal nitride on the conductive circuit. bonding a conductive layer circuit Te, (2) forming a via hole for electrically connecting the conductor layer wherein the conductor circuit and a circuit to form a circuit (3) conductive layer for the circuit A method for manufacturing a metal-based multilayer circuit board.
剤層を介して回路用導体層を接合する前に加熱硬化され
ていることを特徴とする請求項１記載の金属ベース多層
回路基板の製造法。2. The method according to claim 1, wherein said first insulating adhesive layer is a second insulating adhesive.
2. The method for manufacturing a metal-based multilayer circuit board according to claim 1 , wherein the heat-curing is performed before joining the circuit conductor layer via the agent layer .
て、回路用導体の所定の位置をエッチングにより開孔
し、該孔にレーザー光線を照射して第２の絶縁接着剤層
を除去し、更に少なくとも孔内壁を銅めっきしてバイア
ホールを形成することを特徴とする請求項１記載の金属
ベース多層回路基板の製造法。3. In the step of forming the via hole, a predetermined position of the circuit conductor is opened by etching, and the hole is irradiated with a laser beam to remove the second insulating adhesive layer. 2. The method of claim 1, wherein at least the inner wall of the hole is plated with copper to form a via hole.
ｍ以下であることを特徴とする請求項１記載の金属ベー
ス多層回路基板の製造法。4. The conductor circuit according to claim 1, wherein said conductor circuit has a thickness of at least 5 μm and at least
2. The method for manufacturing a metal-based multilayer circuit board according to claim 1, wherein m is equal to or less than m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8231684A JP2801896B2 (en) | 1995-09-12 | 1996-09-02 | Manufacturing method of metal-based multilayer circuit board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7-234001 | 1995-09-12 | ||
| JP23400195 | 1995-09-12 | ||
| JP8231684A JP2801896B2 (en) | 1995-09-12 | 1996-09-02 | Manufacturing method of metal-based multilayer circuit board |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7293998A Division JP3174026B2 (en) | 1998-03-23 | 1998-03-23 | Metal-based multilayer circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09139580A JPH09139580A (en) | 1997-05-27 |
| JP2801896B2 true JP2801896B2 (en) | 1998-09-21 |
Family
ID=26530026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8231684A Expired - Lifetime JP2801896B2 (en) | 1995-09-12 | 1996-09-02 | Manufacturing method of metal-based multilayer circuit board |
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| Country | Link |
|---|---|
| JP (1) | JP2801896B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960707B (en) * | 2008-09-30 | 2013-09-18 | 日立汽车系统株式会社 | power conversion device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030050396A (en) * | 2001-12-18 | 2003-06-25 | 오리온전기 주식회사 | Method of Manufacturing LTCC Module |
| US7119437B2 (en) | 2002-12-26 | 2006-10-10 | Yamaha Hatsudoki Kabushiki Kaisha | Electronic substrate, power module and motor driver |
| JP4246212B2 (en) | 2006-04-21 | 2009-04-02 | 三菱電機株式会社 | Electric power steering device |
| JP4799349B2 (en) * | 2006-09-29 | 2011-10-26 | 株式会社フジクラ | Power distribution device and manufacturing method thereof |
| CN101681907B (en) | 2007-11-30 | 2012-11-07 | 松下电器产业株式会社 | Heat dissipating structure base board, module using heat dissipating structure base board, and method for manufacturing heat dissipating structure base board |
| JP6368657B2 (en) | 2015-02-02 | 2018-08-01 | 日本発條株式会社 | Metal base circuit board and manufacturing method thereof |
| US11798863B2 (en) | 2017-12-08 | 2023-10-24 | Sekisui Chemical Co., Ltd. | Laminate and electronic device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61216391A (en) * | 1985-03-22 | 1986-09-26 | 古河電気工業株式会社 | Manufacture of multilayer circuit board |
-
1996
- 1996-09-02 JP JP8231684A patent/JP2801896B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960707B (en) * | 2008-09-30 | 2013-09-18 | 日立汽车系统株式会社 | power conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09139580A (en) | 1997-05-27 |
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