JP2802865B2 - Plasma CVD equipment - Google Patents
Plasma CVD equipmentInfo
- Publication number
- JP2802865B2 JP2802865B2 JP31941692A JP31941692A JP2802865B2 JP 2802865 B2 JP2802865 B2 JP 2802865B2 JP 31941692 A JP31941692 A JP 31941692A JP 31941692 A JP31941692 A JP 31941692A JP 2802865 B2 JP2802865 B2 JP 2802865B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma cvd
- baffle plate
- shower
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000002791 soaking Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はプラズマＣＶＤ装置に関
する。更に詳細には、本発明は膜特性を維持したまま、
クリーニングレートおよび堆積速度を高速化することが
できるプラズマＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD apparatus. More specifically, the present invention maintains film properties,
The present invention relates to a plasma CVD apparatus capable of increasing a cleaning rate and a deposition rate.
【０００２】[0002]
【従来の技術】半導体ＩＣの製造においては、ウエハの
表面に酸化シリコンなどの薄膜を形成する工程がある。
薄膜の形成方法には化学的気相成長法（ＣＶＤ）が用い
られており、ＣＶＤ法は大別すると、常圧法、減圧法お
よびプラズマ法の３種類がある。最近の超ＬＳＩにおい
ては高集積化に対応して高品質で高精度な薄膜が要求さ
れ、従来の常圧、または減圧ＣＶＤ法では対応が困難と
なり、プラズマＣＶＤ法が注目されている。2. Description of the Related Art In the manufacture of semiconductor ICs, there is a step of forming a thin film such as silicon oxide on the surface of a wafer.
A chemical vapor deposition (CVD) method is used as a method of forming a thin film. The CVD method is roughly classified into three types: a normal pressure method, a reduced pressure method, and a plasma method. In recent VLSI, high-quality and high-precision thin films are required in accordance with high integration, and it is difficult to cope with the conventional normal pressure or low pressure CVD method, and the plasma CVD method is attracting attention.
【０００３】このプラズマＣＶＤ法は真空中において反
応ガスをグロー放電させてプラズマ化して反応に必要な
エネルギーを得るもので、ステップカバレージ（まわり
込み、またはパターン段差部の被覆性）が良好で、また
膜質が強くて耐湿性が優れているなどの特長があり、さ
らに成膜速度（デポレート）が減圧法に比べて極めて速
い点が有利である。In this plasma CVD method, a reaction gas is glow-discharged in a vacuum to form a plasma to obtain energy required for the reaction. The plasma CVD method has good step coverage (wraparound or coverage of a pattern step portion). It is advantageous in that it has features such as strong film quality and excellent moisture resistance, and that the film formation rate (depo rate) is extremely fast as compared with the decompression method.
【０００４】[0004]
【発明が解決しようとする課題】従来から使用されてい
るプラズマＣＶＤ装置の一例を図１に示す。図におい
て、チャンバー（反応炉）10は気密とされ、そのベース
101 にヒーターユニット21と均熱板22とよりなるサセプ
タ20を固設し、これを接地電極とする。チャンバーの蓋
板102 に金属製のノズル部（高周波電極）30を固定し、
その下部にアルミニウム製の円盤状のシャワー電極40を
絶縁リング103 により支持する。シャワー電極に対して
高周波電圧を印加する高周波電源７が設けられる。反応
処理においては、チャンバー10の側面に設けられた搬入
／搬出路50のゲート51を開き、キャリッジ52によりウエ
ハ６を搬入して均熱板22に載置する。ゲートを閉じてチ
ャンバー内部を真空とした後、ヒーターユニット２１に
より均熱板が加熱され、これに載置されたウエハが所定
の温度となると、インレット31,32 より所定の反応ガス
およびキャリヤーガスが吸入されてノズル部30の内部で
混合され、シャワー電極の噴射孔41より噴射される。こ
こで、シャワー電極に高周波電圧が印加されるとグロー
放電により反応ガスがプラズマ化し、反応による生成物
がウエハの表面に蒸着して薄膜が形成される。反応後の
ガスは矢印の経路を通って排気口104 より外部に排出さ
れる。FIG. 1 shows an example of a conventionally used plasma CVD apparatus. In the figure, a chamber (reactor) 10 is made airtight and its base is
A susceptor 20 composed of a heater unit 21 and a heat equalizing plate 22 is fixed to 101, and this is used as a ground electrode. A metal nozzle part (high-frequency electrode) 30 is fixed to the lid plate 102 of the chamber,
A disk-shaped shower electrode 40 made of aluminum is supported by an insulating ring 103 under the lower part. A high-frequency power supply 7 for applying a high-frequency voltage to the shower electrode is provided. In the reaction process, the gate 51 of the loading / unloading path 50 provided on the side of the chamber 10 is opened, and the wafer 6 is loaded by the carriage 52 and placed on the soaking plate 22. After the gate is closed and the inside of the chamber is evacuated, the soaking plate is heated by the heater unit 21. When the wafer mounted on the plate reaches a predetermined temperature, predetermined reaction gas and carrier gas are supplied from the inlets 31 and 32. It is sucked and mixed inside the nozzle unit 30, and is injected from the injection hole 41 of the shower electrode. Here, when a high-frequency voltage is applied to the shower electrode, the reaction gas is turned into plasma by glow discharge, and a product of the reaction is deposited on the surface of the wafer to form a thin film. The gas after the reaction is discharged to the outside through the exhaust port 104 through the path indicated by the arrow.
【０００５】従来の高周波電極とシャワー電極との組み
合わせでは印加電圧を高めるとクリーニングレートと堆
積速度は高まるが、膜特性が変化し、一定の品質を有す
るＣＶＤ膜を得ることができなかった。In the conventional combination of a high-frequency electrode and a shower electrode, when the applied voltage is increased, the cleaning rate and the deposition rate are increased, but the film characteristics are changed, and a CVD film having a certain quality cannot be obtained.
【０００６】従って、本発明の目的は、膜特性を維持し
たまま、クリーニングレートおよび堆積速度を高速化す
ることのできるプラズマＣＶＤ装置を提供することであ
る。Accordingly, it is an object of the present invention to provide a plasma CVD apparatus capable of increasing a cleaning rate and a deposition rate while maintaining film characteristics.
【０００７】[0007]
【課題を解決するための手段】前記目的を達成するため
に、本発明では、接地基板電極を構成するアルミ製均熱
板を上面に有し、このアルミ製均熱板を加熱するための
ヒータを有するサセプタと、このサセプタ上の接地基板
電極に対峙する、多数の貫通孔を有するアルミニウム製
シャワー電極を備えた高周波電極とを有するチャンバー
を有するプラズマＣＶＤ装置において、前記高周波電極
とシャワー電極との間に、多数の貫通孔を有するアルミ
ニウム製邪魔板が間挿されていることを特徴とするプラ
ズマＣＶＤ装置を提供する。In order to achieve the above-mentioned object, the present invention provides a heater for heating an aluminum soaking plate having an aluminum soaking plate constituting an electrode of a ground substrate on its upper surface. And a plasma CVD apparatus having a chamber having a high-frequency electrode provided with an aluminum shower electrode having a large number of through-holes and facing a ground substrate electrode on the susceptor, wherein the high-frequency electrode and the shower electrode There is provided a plasma CVD apparatus, wherein an aluminum baffle plate having a large number of through holes is interposed therebetween.
【０００８】[0008]
【作用】本発明のプラズマＣＶＤ装置では、高周波電極
とシャワー電極との間に邪魔板が間挿されているので、
この邪魔板が一種のキャパシタとなり、シャワー電極と
下部電極間の電界を強化する。電界を強化することで、
多量のＣＶＤ成膜反応用材料ガスが分解可能となり、膜
特性を維持したまま、堆積速度およびクリーニングレー
トの高速化が可能となる。堆積速度およびクリーニング
レートの高速化によりスループットが向上する。According to the plasma CVD apparatus of the present invention, a baffle is inserted between the high-frequency electrode and the shower electrode.
This baffle plate becomes a kind of capacitor, and enhances the electric field between the shower electrode and the lower electrode. By strengthening the electric field,
A large amount of the CVD film forming reaction material gas can be decomposed, and the deposition rate and the cleaning rate can be increased while maintaining the film characteristics. Throughput is improved by increasing the deposition rate and the cleaning rate.
【０００９】[0009]
【実施例】以下、図面を参照しながら本発明のプラズマ
ＣＶＤ装置の一例について更に詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an example of the plasma CVD apparatus of the present invention will be described in more detail with reference to the drawings.
【００１０】図２は本発明のプラズマＣＶＤ装置におけ
る上部電極の部分概要断面図である。図示されているよ
うに、高周波電極３０とシャワー電極４０の間に邪魔板
６０が間挿されている。高周波電極３０と邪魔板６０と
により形成される第１の空間６２の高さ、すなわち、高
周波電極３０と邪魔板６０との間隔は、内部で放電を起
こさせないようにするため、３〜４mm程度は必要であ
る。同様に、邪魔板６０とシャワー電極４０とにより形
成される第２の空間６６の高さ、すなわち、邪魔板６０
とシャワー電極４０との間隔は、内部で放電を起こさせ
ないようにするため、３〜４mm程度は必要である。FIG. 2 is a partial schematic sectional view of an upper electrode in the plasma CVD apparatus of the present invention. As shown, a baffle plate 60 is interposed between the high-frequency electrode 30 and the shower electrode 40. The height of the first space 62 formed by the high-frequency electrode 30 and the baffle plate 60, that is, the distance between the high-frequency electrode 30 and the baffle plate 60 is about 3 to 4 mm in order to prevent internal discharge. Is necessary. Similarly, the height of the second space 66 formed by the baffle plate 60 and the shower electrode 40, that is, the height of the baffle plate 60
The distance between the shower electrode 40 and the shower electrode 40 is required to be about 3 to 4 mm in order not to cause a discharge inside.
【００１１】シャワー電極４０および邪魔板６０はネジ
６８で高周波電極３０に固定し、周囲を絶縁リング１０
３で取り囲むことにより内部を密閉させる。The shower electrode 40 and the baffle plate 60 are fixed to the high-frequency electrode 30 with screws 68, and the surroundings of the insulating ring 10 are fixed.
The inside is closed by surrounding with 3.
【００１２】邪魔板６０は例えば、アルミニウムから構
成されており、直径が１７５mm〜２１０mmの範囲内で、
肉厚は１０mmである。表面には直径０．５mm〜０．７mm
の貫通孔が４〜５mmピッチで開設されている。ちなみ
に、シャワー電極もアルミニウムから構成されており、
直径が１７５mm〜２１０mmの範囲内で、肉厚は３〜５mm
であり、表面には直径０．５〜０．７mmの貫通孔が２〜
４mmのピッチで開設されている。The baffle plate 60 is made of, for example, aluminum and has a diameter of 175 mm to 210 mm.
The wall thickness is 10 mm. 0.5mm to 0.7mm in diameter on the surface
Are provided at a pitch of 4 to 5 mm. By the way, the shower electrode is also made of aluminum,
Diameter is in the range of 175mm to 210mm, wall thickness is 3 to 5mm
The surface has through-holes of 0.5 to 0.7 mm in diameter.
It is established at a pitch of 4mm.
【００１３】邪魔板は高周波電極とシャワー電極との間
で一種のキャパシタとなるものであればよいので、素材
としてはアルミニウム以外にも、例えば、サファイヤ、
ＳｉＯ2 およびアルミナなどが使用できる。また、肉厚
も２〜１５mmの範囲内で変化させ、開孔直径も２０〜２
１０mmの範囲内で変化させることができる。邪魔板の肉
厚および開孔直径はシャワー電極の肉厚および開孔直径
と同一である必要はない。The baffle plate may be any type of capacitor between the high-frequency electrode and the shower electrode. Therefore, besides aluminum, the material may be, for example, sapphire,
SiO 2 and alumina can be used. The wall thickness is also changed within the range of 2 to 15 mm, and the opening diameter is also 20 to 2 mm.
It can be changed within a range of 10 mm. The wall thickness and aperture diameter of the baffle need not be the same as the wall thickness and aperture diameter of the shower electrode.
【００１４】[0014]
【発明の効果】以上説明したように、本発明のプラズマ
ＣＶＤ装置における上部電極では、高周波電極とシャワ
ー電極との間に邪魔板が間挿されているので、この邪魔
板が一種のキャパシタとなり、シャワー電極と下部電極
間の電界を強化する。電界を強化することで、多量のＣ
ＶＤ成膜反応用材料ガスが分解可能となり、膜特性を維
持したまま、堆積速度およびクリーニングレートの高速
化が可能となる。堆積速度およびクリーニングレートの
高速化によりスループットが向上する。As described above, in the upper electrode of the plasma CVD apparatus according to the present invention, a baffle is inserted between the high-frequency electrode and the shower electrode. The electric field between the shower electrode and the lower electrode is strengthened. By strengthening the electric field, a large amount of C
The VD film forming reaction material gas can be decomposed, and the deposition rate and the cleaning rate can be increased while maintaining the film characteristics. Throughput is improved by increasing the deposition rate and the cleaning rate.
【図１】従来のプラズマＣＶＤ装置の一例の構成を示す
模式的断面図である。FIG. 1 is a schematic sectional view showing a configuration of an example of a conventional plasma CVD apparatus.
【図２】本発明による上部電極の一例の部分概要断面図
である。FIG. 2 is a partial schematic sectional view of an example of an upper electrode according to the present invention.
１ プラズマＣＶＤ装置 ６ ウエハ ７ 高周波電源 １０ チャンバー（反応炉） １０１ ベース １０２ 蓋板 １０３ 絶縁リング １０４ 排気口 ２０ サセプタ ２１ ヒータユニット ２２ 均熱板 ３０ ノズル部 ３１，３２ インレット ４０ シャワー電極 ４１ 噴射孔 ５０ 搬入／搬出路 ５１ ゲート ５２ キャリッジ ６０ 邪魔板 ６２ 第１の空間 ６４ 貫通孔 ６６ 第２の空間 ６８ ネジ DESCRIPTION OF SYMBOLS 1 Plasma CVD apparatus 6 Wafer 7 High frequency power supply 10 Chamber (reactor) 101 Base 102 Cover plate 103 Insulation ring 104 Exhaust port 20 Susceptor 21 Heater unit 22 Heat equalizing plate 30 Nozzle part 31, 32 Inlet 40 Shower electrode 41 Injection hole 50 Carry in / Unloading path 51 Gate 52 Carriage 60 Baffle plate 62 First space 64 Through hole 66 Second space 68 Screw
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−23106（ＪＰ，Ａ) 特開 昭62−218578（ＪＰ，Ａ) 特開 平２−73624（ＪＰ，Ａ) 特開 平２−177322（ＪＰ，Ａ) 実開 昭60−52619（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/205 C23C 16/50──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-62-23106 (JP, A) JP-A-62-218578 (JP, A) JP-A-2-73624 (JP, A) JP-A-2- 177322 (JP, A) Japanese Utility Model Showa 60-52619 (JP, U) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/205 C23C 16/50
Claims (3)
を上面に有し、このアルミ製均熱板を加熱するためのヒ
ータを有するサセプタと、このサセプタ上の接地基板電
極に対峙する、多数の貫通孔を有するアルミニウム製シ
ャワー電極を備えた高周波電極とを有するチャンバーを
有するプラズマＣＶＤ装置において、前記高周波電極と
シャワー電極との間に、多数の貫通孔を有するアルミニ
ウム製邪魔板が間挿されていることを特徴とするプラズ
マＣＶＤ装置。A susceptor having on its upper surface an aluminum soaking plate constituting a ground substrate electrode, having a heater for heating the aluminum soaking plate, facing a ground substrate electrode on the susceptor; In a plasma CVD apparatus having a chamber having a high frequency electrode having an aluminum shower electrode having a large number of through holes, an aluminum baffle plate having a large number of through holes is interposed between the high frequency electrode and the shower electrode. A plasma CVD apparatus, comprising:
の範囲内であり、邪魔板とシャワー電極との間隔は３〜
４mmの範囲内である請求項１のプラズマＣＶＤ装置。2. The distance between the high-frequency electrode and the baffle plate is 3 to 4 mm.
And the distance between the baffle plate and the shower electrode is 3 to
2. The plasma CVD apparatus according to claim 1, wherein the distance is within a range of 4 mm.
に螺着されており、邪魔板、シャワー電極および高周波
電極の側面は絶縁材により包囲されている請求項１のプ
ラズマＣＶＤ装置。3. The plasma CVD apparatus according to claim 1, wherein the baffle plate and the shower electrode are screwed to the high-frequency electrode, and side surfaces of the baffle plate, the shower electrode and the high-frequency electrode are surrounded by an insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31941692A JP2802865B2 (en) | 1992-11-04 | 1992-11-04 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31941692A JP2802865B2 (en) | 1992-11-04 | 1992-11-04 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06151336A JPH06151336A (en) | 1994-05-31 |
| JP2802865B2 true JP2802865B2 (en) | 1998-09-24 |
Family
ID=18109954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31941692A Expired - Fee Related JP2802865B2 (en) | 1992-11-04 | 1992-11-04 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2802865B2 (en) |
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|---|---|---|---|---|
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| JP3317935B2 (en) * | 1999-09-01 | 2002-08-26 | 九州日本電気株式会社 | Plasma processing equipment |
| JP4570732B2 (en) * | 2000-05-25 | 2010-10-27 | 株式会社アルバック | Gas ejection device and vacuum processing device |
| TWI224815B (en) * | 2001-08-01 | 2004-12-01 | Tokyo Electron Ltd | Gas processing apparatus and gas processing method |
| TWI427186B (en) * | 2008-09-26 | 2014-02-21 | Hon Hai Prec Ind Co Ltd | Coating baffler |
| JP2010263049A (en) * | 2009-05-01 | 2010-11-18 | Ulvac Japan Ltd | Dry etching apparatus |
| WO2011044451A2 (en) * | 2009-10-09 | 2011-04-14 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
| JP5702964B2 (en) * | 2010-07-27 | 2015-04-15 | 日本発條株式会社 | Ground electrode contact and method of manufacturing the same |
| KR101481928B1 (en) | 2010-12-23 | 2015-01-21 | 엘리멘트 식스 리미티드 | Controlling doping of synthetic diamond material |
| GB201021870D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| KR101962331B1 (en) * | 2015-03-13 | 2019-03-26 | 주식회사 엘지화학 | Reactor for Plasma Deposition of Reducing By-product Formation and Deposition Method Using the Same |
-
1992
- 1992-11-04 JP JP31941692A patent/JP2802865B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102940121B1 (en) * | 2023-05-31 | 2026-03-18 | 주식회사 히타치하이테크 | Plasma treatment device |
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| Publication number | Publication date |
|---|---|
| JPH06151336A (en) | 1994-05-31 |
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