JP2804946B2 - Buried compound semiconductor light emitting device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a buried compound semiconductor light emitting device having a double hetero junction or a pn junction and a method of manufacturing the same.

[0002]

2. Description of the Related Art Hitherto, a buried compound semiconductor light emitting device described below with reference to FIG. 8 has been proposed. That is, a semiconductor substrate 1 made of, for example, InP and having, for example, an n-type
The semiconductor laminate 2 having the mesa portion 3 is formed thereon.

In this case, the semiconductor laminate 2 is formed by intentionally introducing a semiconductor layer 4 formed on the semiconductor substrate 1 as a cladding layer made of, for example, InP and having an n-type, and an impurity imparting a conductivity type. Even if it is not introduced or is introduced only at a sufficiently low concentration, for example, In
As a semiconductor layer 5 as an active layer made of GaAsP, another semiconductor layer 6 made of, for example, another cladding layer made of InP and having p-type, and as a layer with an electrode made of, for example, InGaAsP and having p-type From a semiconductor laminate (not shown) having a configuration in which the other semiconductor layers 7 are laminated in that order, into the semiconductor layer 4 from the side opposite to the semiconductor substrate 1 side. It is formed by processing.

Further, a semi-insulating semiconductor layer 11 made of InP and having a semi-insulating property by introducing Fe is embedded on the semiconductor laminated body 2 having the above-mentioned mesa section 3 so that the mesa section 3 can be embedded. The upper surface is formed so as to substantially coincide with the top surface of the mesa portion 3.

Further, a semiconductor laminated body 2 is provided on a semiconductor substrate 1.
The electrode layer 12 is formed on the surface opposite to the side.

Further, on the top surface of the mesa portion 3 of the semiconductor laminate 2, that is, on the upper surface of the semiconductor layer 7 and the upper surface of the semi-insulating semiconductor layer 11, a common electrode layer extending between them is provided. 13 are formed.

The above is the configuration of the conventionally proposed buried compound semiconductor light emitting device.

A method of manufacturing a buried compound semiconductor light emitting device described below with reference to FIGS. 9 and 10 has been proposed.

9 and 10, parts corresponding to those in FIG. 8 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the method of manufacturing the conventional buried compound semiconductor light emitting device shown in FIGS. 9 and 10, the following steps are performed to manufacture the conventional buried compound semiconductor light emitting device described above with reference to FIG. .

That is, a semiconductor substrate 1 is prepared (FIG. 9)
A).

A semiconductor laminate 2 having a configuration in which semiconductor layers 4, 5, 6, and 7 are laminated on the semiconductor substrate 1 in that order, and thereafter becomes a semiconductor laminate 2 having a mesa portion 3 'Is formed by a vapor phase epitaxial growth method (FIG. 9B).

Next, the semiconductor laminate 2 ′ having a mesa 3 is removed from the semiconductor laminate 2 ′ by etching to a depth that reaches the semiconductor layer 4 from the side opposite to the semiconductor substrate 1 with respect to the semiconductor laminate 2 ′. 2 (FIG. 9C).

Next, as described above, the semi-insulating semiconductor layer 11 is buried in the mesa portion 3 of the semiconductor laminate 2 by vapor phase epitaxial growth, and the upper surface thereof substantially coincides with the top surface of the mesa portion 3. (FIG. 10D).

Next, a semiconductor laminate 2 is placed on a semiconductor substrate 1.
The electrode layer 12 is formed on the side opposite to the side, and the top surface of the mesa portion 3 of the semiconductor laminate 2 and the semi-insulating semiconductor layer 1 are formed.
1 on top of which a common electrode layer 13 is formed for them extending continuously between them (FIG. 10E);
The conventional buried compound semiconductor light emitting device described above with reference to FIG. 8 is obtained.

The above is a method of manufacturing a buried compound semiconductor light emitting device proposed conventionally.

According to the conventional buried compound semiconductor light emitting device having the structure described above with reference to FIG. 8, if a power supply having the electrode layer 13 side positive is connected between the electrode layers 12 and 13, From this, the current is applied to the mesa 3
Flows into the semiconductor layer 5 as an active layer, and based on this, light is obtained in the semiconductor layer 5 as an active layer, and the light is transmitted to the semiconductor layer 5 as an active layer.
A function as a light emitting device is obtained in which the light is confined and propagated in the inside by the semiconductor layers 4 and 6 as cladding layers.

The semi-insulating semiconductor layer 11 formed on the semiconductor laminate 2 so as to fill the mesa 3 is
When the semiconductor layer 5 as an active layer is made of InGaAs as in the above example, the semi-insulating semiconductor layer 1 is used.
1 functions as a cladding layer. For this reason, light generated in the semiconductor layer 5 as an active layer propagates in the semiconductor layer 5 by being confined by the semi-insulating semiconductor layer 11, so that light propagating in the semiconductor layer 5 is semi-insulated. There is less loss than when the conductive semiconductor layer 11 does not function as a cladding layer.

Further, a semi-insulating semiconductor layer 1 made of InP
1 has a semi-insulating property due to the introduction of Fe. Therefore, even if the electrode layer 13 extends on the semi-insulating semiconductor layer 11, a current is applied to the mesa portion 3 of the semiconductor laminate 2. The flow is constricted, so that the semiconductor layer 5 as an active layer
Since the current can be injected at a high current density,
Light emission from the semiconductor layer 5 as an active layer can be obtained relatively efficiently.

Further, according to the method for manufacturing the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8 can be easily manufactured. .

[0021]

However, in the conventional buried compound semiconductor light emitting device described above with reference to FIG. 8, when a current flows through the semiconductor layer 5 as an active layer as described above, a part of the current flows. Inevitably, a leakage current spreading to the semi-insulating semiconductor layer 11 side is unavoidable, and the region where the leakage current spreads is the mesa portion 3 of the semi-insulating semiconductor layer 11.
Side region, and therefore, Fe exists in that region.
For this reason, Fe acts as a recombination center for carriers (electrons) that become a leakage current and absorbs the leakage current, so that the leakage current occurs at a value that cannot be ignored.

From the above, it has been described that in the case of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8, light emission from the semiconductor layer 5 as an active layer can be obtained relatively efficiently. It had the disadvantage that the high efficiency did not have a sufficiently satisfactory value.

In the case of the conventional method of manufacturing a buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, the semi-insulating semiconductor layer 11 is heated at 450 ° C.
By setting the temperature relatively high, such as at least ℃, it can be formed as having good crystallinity. In this case, the thickness and composition of the semiconductor layer 5 as an active layer are changed from the initial values. Therefore, there is a disadvantage that it is difficult to manufacture a buried compound semiconductor light emitting device having desired characteristics.

Thus, the present invention is free from the disadvantages described above,
A novel buried compound semiconductor light emitting device and a method for manufacturing the same are proposed.

[0025]

The buried compound semiconductor light emitting device according to the present invention comprises, as in the case of the conventional buried compound semiconductor light emitting device described above with reference to FIG. On a semiconductor substrate having a conductivity type of 1,
A first semiconductor layer formed on the semiconductor substrate and made of a compound semiconductor and having a first conductivity type; and a first semiconductor layer made of a compound semiconductor and having a second conductivity type opposite to the first conductivity type. And a third semiconductor layer, which is a compound semiconductor and does not intentionally introduce impurities that give a conductivity type or at least introduces impurities at a low concentration, A mesa formed by an etching process at a depth from the first semiconductor laminate having a configuration in which the first semiconductor layer is laminated to the inside of the first semiconductor layer from the side opposite to the semiconductor substrate. A second semiconductor laminate having a portion is formed, and (i)
i) On the second semiconductor layered body, make InP and F
e, a semi-insulating semiconductor layer exhibiting semi-insulating properties is formed so as to fill the mesa portion, and a semi-insulating semiconductor layer is formed on the semiconductor substrate on the side opposite to the second semiconductor laminate side. One electrode layer is formed, and (iii) on the top surface of the mesa portion of the second semiconductor laminated body and on the upper surface of the semi-insulating semiconductor layer, a portion common to those extending continuously therebetween. It has a configuration in which a second electrode layer is formed.

However, according to the buried compound semiconductor light emitting device of the present invention, in the buried compound semiconductor light emitting device having such a configuration, the buried compound semiconductor light emitting device is provided between the second semiconductor laminate and the semi-insulating semiconductor layer. , InP, and the impurity imparting the conductivity type is not intentionally introduced, or even if the impurity imparting the p-type is introduced only at a low concentration, the fourth impurity is formed by the atomic layer epitaxial growth method. Semiconductor layer is interposed.

The method of manufacturing the buried compound semiconductor light emitting device according to the present invention is similar to the method of manufacturing the conventional buried compound semiconductor light emitting device described above with reference to FIGS. A first semiconductor layer made of a compound semiconductor and having a first conductivity type, and a second semiconductor layer made of a compound semiconductor and having a first conductivity type opposite to the first conductivity type. The second semiconductor layer having the conductivity type is a compound semiconductor, and the impurity imparting the conductivity type is not intentionally introduced, or is introduced only at a low concentration, if at all. Forming a first semiconductor laminated body having a configuration in which the first semiconductor laminated body is laminated in that order, and (ii) forming the first semiconductor laminated body from the side opposite to the semiconductor substrate side with respect to the first semiconductor laminated body. Reach into the semiconductor layer of Forming a second semiconductor stacked body having a mesa portion from the first semiconductor stacked body by the etching process, and (iii) forming InP and Fe on the second semiconductor stacked body. Forming a semi-insulating semiconductor layer having a semi-insulating property by being introduced so as to fill a mesa portion of the second semiconductor laminate by a vapor phase epitaxial growth method; and (iv) forming a semi-insulating semiconductor layer on the semiconductor substrate. Forming a first electrode layer on the side opposite to the side of the second semiconductor laminate, and forming the first electrode layer on the top surface of the mesa portion of the second semiconductor layer and the upper surface of the semi-insulating semiconductor layer; A common second electrode layer is formed for those extending continuously therebetween.

However, the method of manufacturing a buried compound semiconductor light-emitting device according to the present invention is the same as the method of manufacturing such a buried compound semiconductor light-emitting device, except that: After the step of forming the body and before the step of forming the semi-insulating semiconductor layer, it is assumed that an impurity that is made of InP and has a conductivity type is introduced or not introduced onto the second semiconductor laminate. The fourth semiconductor layer into which impurities giving p-type are introduced only at a low concentration is extended by the atomic layer epitaxial growth method on the side surfaces of the mesa portion but not on the upper surface, and almost each portion is not extended. Forming a uniform thickness.

[0029]

The operation of the buried compound semiconductor light emitting device according to the present invention is the same as that of the conventional buried compound semiconductor light emitting device described above with reference to FIG. A fourth layer formed by an atomic layer epitaxial growth method, wherein the impurity which gives In conductivity and which gives a conductivity type is not intentionally introduced, or the impurity which gives a p-type is introduced only at a low concentration. Except that the semiconductor layer is interposed, it has the same configuration as that of the conventional buried compound semiconductor light emitting device described above with reference to FIG. 8, and the fourth semiconductor layer has a high ratio. Because of the resistance, even if the second electrode layer extends over the fourth semiconductor layer and over the semi-insulating semiconductor layer, the second electrode layer can be formed as shown in FIG.
As in the case of the conventional buried type compound semiconductor light emitting device described above, the current can be narrowed and flow in the mesa portion of the second semiconductor laminate.
As in the case of the conventional embedded compound semiconductor light emitting device described above, light emission in the mesa portion can be obtained relatively efficiently.

However, in the case of the buried compound semiconductor light emitting device according to the present invention, when a current flows to the mesa portion of the second semiconductor laminate, a part of the current leaks to the semi-insulating semiconductor layer. Even if a current is generated, the area where the leakage current spreads does not reach the semi-insulating semiconductor layer,
It can be terminated in the fourth semiconductor layer, and in that region the Fe
Do not have. For this reason, even if carriers that become leakage currents are accumulated in the fourth semiconductor layer, the leakage currents are hardly absorbed, and therefore, even if little or no leakage currents occur, the conventional technique described above with reference to FIG. , And occurs only with a negligible value which is much smaller than in the case of the embedded compound semiconductor light emitting device.

From the above, according to the buried compound semiconductor light emitting device of the present invention, it is possible to obtain much higher luminous efficiency than the conventional buried compound semiconductor light emitting device described above with reference to FIG. Can be.

Further, according to the method of manufacturing a buried compound semiconductor light emitting device according to the present invention, the buried compound semiconductor light emitting device according to the present invention, which achieves the above-described excellent effects, can be replaced with a conventional buried compound semiconductor light emitting device. Forming a second semiconductor laminate from the first semiconductor laminate in the method of manufacturing the device;
Between the step of forming the semi-insulating semiconductor layer and the step of forming the sixty-fourth semiconductor layer for preventing the leakage current described for the buried compound semiconductor light emitting device according to the present invention, the method can be easily performed. Can be manufactured.

Further, since the buried compound semiconductor light emitting device is formed as having the fourth semiconductor layer which does not cause a leakage current, the semi-insulating semiconductor layer does not need to be formed by applying a high temperature to the semiconductor substrate. Therefore, the semi-insulating semiconductor layer may be formed as having a somewhat poor insulating property, and since the fourth semiconductor layer is formed by the atomic layer epitaxial growth method, the fourth semiconductor layer is formed on the semiconductor substrate. Even if a high temperature is not applied, the device can be easily formed as having a high specific resistance, so that the buried compound semiconductor light emitting device can be easily manufactured with desired characteristics.

[0034]

Embodiment 1 Next, a first embodiment of a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIG.

In FIG. 1, portions corresponding to those in FIG. 8 are denoted by the same reference numerals, and detailed description is omitted.

The buried compound semiconductor light emitting device according to the present invention shown in FIG. 1 is the same as the conventional buried compound semiconductor light emitting device shown in FIG. A semiconductor formed by an atomic layer epitaxial growth method, wherein an impurity which gives In conductivity and which gives a conductivity type is not intentionally introduced, or an impurity which gives a p-type is introduced only at a low concentration. Except that the layer 10 is interposed, it has the same configuration as that of the conventional buried compound semiconductor light emitting device described above with reference to FIG.

The above is the configuration of the first embodiment of the buried compound semiconductor light emitting device according to the present invention.

According to the buried compound semiconductor light emitting device of the present invention having such a structure, except for the above-mentioned matter, the same structure as that of the conventional buried compound semiconductor light emitting device described above with reference to FIG. Having.

Therefore, although the detailed description is omitted, even if the electrode layer 13 extends over the semi-insulating semiconductor layer 11 across the semiconductor layer 10, the conventional buried type As in the case of the compound semiconductor light emitting device, the semiconductor laminate 2
The current can be constricted and flow to the mesa portion 3 of
As in the case of the conventional embedded compound semiconductor light emitting device described above with reference to FIG. 8, light emission in the mesa unit 3 can be obtained with relatively high efficiency.

However, in the case of the buried compound semiconductor light emitting device according to the present invention shown in FIG. 1, when a current flows through the mesa portion 3 of the semiconductor laminate 2, a part of the current includes the semi-insulating semiconductor layer 11. Even if a leakage current spreads to the side, the region where the leakage current spreads is formed in the semi-insulating semiconductor layer 11.
It can be terminated in the semiconductor layer 10 that has not reached the inside, and the region does not have Fe as in the semi-insulating semiconductor layer 11. For this reason, even if carriers that become leakage currents are accumulated in the semiconductor layer 10, the leakage currents are hardly absorbed, and therefore, even if little or no leakage currents occur, the conventional filling described with reference to FIG. It occurs only at a negligible value which is much smaller than that of the embedded compound semiconductor light emitting device.

As described above, according to the buried compound semiconductor light emitting device of the present invention shown in FIG. 1, the light emission is significantly higher than that of the conventional buried compound semiconductor light emitting device described above with reference to FIG. Efficiency can be obtained.

[0042]

Embodiment 2 Next, a second embodiment of the buried compound semiconductor light emitting device according to the present invention will be described with reference to FIG.

In FIG. 2, portions corresponding to those in FIG. 1 are denoted by the same reference numerals, and detailed description is omitted.

The buried compound semiconductor light emitting device according to the present invention shown in FIG. 2 is different from the buried compound semiconductor light emitting device according to the present invention described above with reference to FIG. And therefore the buried compound semiconductor light emitting device according to the invention described above with reference to FIG. 1 except that the semiconductor layers 4 and 6 form an pn junction between them as an n-layer and a p-layer. Has the same configuration as

The above is the configuration of the second embodiment of the buried compound semiconductor light emitting device according to the present invention.

According to the buried compound semiconductor light emitting device of the present invention having such a configuration, except for the matters described above, the same as the case of the buried compound semiconductor light emitting device of the present invention described above with reference to FIG. Having the configuration and the electrode layer 12
When a required power supply is connected between the semiconductor layers 4 and 13 and a current is injected into the mesa unit 3 of the semiconductor laminate 2, light is obtained at a pn junction between the semiconductor layers 4 and 6, and the light is transmitted to the semiconductor layers 6 and 7, and the light can be emitted to the outside through the electrode layer 13. Therefore, further detailed description is omitted. However, as in the case of the embedded compound semiconductor light emitting device according to the present invention described above with reference to FIG. Obviously, the function as the device can be obtained.

Also, in the case of the buried compound semiconductor light emitting device according to the present invention shown in FIG. 2, as in the case of the buried compound semiconductor light emitting device according to the present invention described above with reference to FIG. Since the semiconductor layer 10 is provided between the insulating semiconductor layers 11, almost no leakage current from the mesa portion 3 to the inside of the semi-insulating semiconductor layer 11 is generated. The same excellent operational effects as those of the type compound semiconductor light emitting device can be obtained.

[0048]

Embodiment 3 Next, a first embodiment of a method of manufacturing a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIGS.

In FIGS. 3 and 4, parts corresponding to those in FIGS. 1, 9 and 10 are denoted by the same reference numerals, and detailed description is omitted.

The method of manufacturing the buried compound semiconductor light emitting device according to the present invention shown in FIGS. 3 and 4 employs the following sequential steps to produce the buried compound semiconductor light emitting device according to the present invention described above with reference to FIG. To manufacture.

A semiconductor substrate 1 is prepared in the same manner as in the method of manufacturing the conventional embedded compound semiconductor light emitting device described above with reference to FIGS. 9 and 10 (FIG. 3A).

Next, semiconductor layers 4, 5, 6 and 7 are stacked on the semiconductor substrate 1 in the same manner as in the case of the conventional method of manufacturing a buried compound semiconductor light emitting device described above with reference to FIGS. A body 2 'is formed (FIG. 3B).

Next, as in the case of the conventional method of manufacturing a buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, a semiconductor laminate 2 having a mesa 3 is formed from a semiconductor laminate 2 '. (FIG. 3C).

Next, even if the impurity which is made of InP and gives the conductivity type is not intentionally introduced or is introduced intentionally on the semiconductor laminate 2, the impurity giving the p-type is introduced only at a low concentration. A non-existent semiconductor layer 10 is formed by an atomic layer epitaxial growth method so as to extend on the side surface of the mesa 3 but not on the upper surface and to have a substantially uniform thickness (FIG. 4D).

In this case, the semiconductor layer 10 is
To a low temperature such as 350 ° C., and having good crystallinity and high specific resistance, for example, 1000
It can be easily formed to a thickness of A. An example of the atomic layer epitaxial growth method in this case is that InCl is used as a source gas for In and PH3 is used as a source gas for P.
The semiconductor layer 10 made of InP is formed by repeatedly forming a large number of monoatomic layers of In and P at a time.

Next, the semi-insulating semiconductor layer 11 and the mesa portion 3 are formed on the semiconductor laminate 2 in accordance with the conventional method of manufacturing a buried compound semiconductor light emitting device described above with reference to FIGS. It is formed so as to be buried via the semiconductor layer 10 (FIG.
E).

In this case, the semi-insulating semiconductor layer 11 can be formed by setting the semiconductor substrate 1 at a low temperature of 450 ° C. or less.

Next, as in the case of the conventional method of manufacturing a buried compound semiconductor light emitting device described above with reference to FIGS. 9 and 10, an electrode is formed on the surface of the semiconductor substrate 1 opposite to the semiconductor laminate 2 side. The semiconductor layer 10 is formed on the top surface of the mesa portion 3 of the semiconductor laminate 2 and on the upper surface of the semi-insulating semiconductor layer 11.
The electrode layer 13 extending continuously across the upper surface of the substrate is formed (FIG. 4F), and thus the buried compound semiconductor light emitting device according to the present invention described above with reference to FIG. 1 is manufactured.

The above is the first embodiment of the method of manufacturing the buried compound semiconductor light emitting device according to the present invention.

According to such a method of manufacturing a buried compound semiconductor light emitting device according to the present invention, detailed description is omitted,
The buried compound semiconductor light-emitting device according to the present invention shown in FIG. 1 which achieves the above-described excellent operation and effect can be obtained by using the semiconductor laminate 2 ′ in the method for manufacturing the conventional buried compound semiconductor light-emitting device described above with reference to FIGS. 9 and 10. Between the step of forming the semiconductor laminate 2 from the step of forming the semi-insulating semiconductor layer 11 and
It can be easily manufactured only by providing a step of forming the semiconductor layer 10.

Further, since the embedded compound semiconductor light emitting device is formed as having the semiconductor layer 10, the semi-insulating semiconductor layer 11 does not need to be formed at a high temperature in the semiconductor substrate 1, and the semiconductor substrate 1 does not need to be formed at a high temperature. Since the layer 10 can also be formed at a low temperature, the semiconductor layer can be easily manufactured with desired characteristics. This is apparent from the measurement of the relationship between the temperature of the semiconductor substrate 1 and the diffusion distance of the impurity in the semiconductor layer 4 or 6 formed on the semiconductor substrate, and the result shown in FIG. 7 was obtained. Will.

[0062]

Embodiment 4 Next, a second embodiment of a method of manufacturing a buried compound semiconductor light emitting device according to the present invention will be described with reference to FIGS.

In FIGS. 5 and 6, parts corresponding to those in FIGS. 2, 3 and 4 are denoted by the same reference numerals, and detailed description is omitted.

The method of manufacturing the buried compound semiconductor light emitting device according to the present invention shown in FIGS.
3 and 4, the present invention described above with reference to FIGS. 3 and 4 except that the semiconductor laminates 2 'to 2 are formed without the semiconductor layer 5 as an active layer. By performing the same sequential steps as those of the embedded compound semiconductor light emitting device according to the present invention, the embedded compound semiconductor light emitting device according to the present invention described above with reference to FIG.

The above is the second embodiment of the method of manufacturing the buried compound semiconductor light emitting device according to the present invention.

Although the detailed description of the method of manufacturing the buried compound semiconductor light emitting device according to the present invention is omitted,
It will be apparent that the same excellent operational effects as those of the method of manufacturing the buried compound semiconductor light emitting device according to the present invention described above with reference to FIGS.

In the above description, only a few embodiments of the present invention have been described, and the semiconductor layer 5 as an active layer may have a multiple quantum well structure. Without modification, various modifications and changes could be made.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a first embodiment of a buried compound semiconductor light emitting device according to the present invention.

FIG. 2 is a schematic sectional view showing a second embodiment of a buried compound semiconductor light emitting device according to the present invention.

FIG. 3 is a schematic sectional view showing sequential steps in a first embodiment of a method for manufacturing a buried compound semiconductor light emitting device according to the present invention.

FIG. 4 is a schematic sectional view showing sequential steps in a first embodiment of a method for manufacturing a buried compound semiconductor light emitting device according to the present invention.

FIG. 5 is a schematic cross-sectional view in a sequential step showing a second embodiment of the method of manufacturing the buried compound semiconductor light emitting device according to the present invention.

FIG. 6 is a schematic cross-sectional view in a sequential step showing a second embodiment of a method for manufacturing a buried compound semiconductor light emitting device according to the present invention.

FIG. 7 is a diagram illustrating the temperature dependence of the diffusion distance of an impurity in a semiconductor layer for explaining a method of manufacturing a buried compound semiconductor light emitting device according to the present invention.

FIG. 8 is a schematic sectional view showing a conventional embedded compound semiconductor light emitting device.

FIG. 9 is a schematic cross-sectional view in a sequential step showing a method for manufacturing a conventional embedded compound semiconductor light emitting device.

FIG. 10 is a schematic cross-sectional view in a sequential step showing a method for manufacturing a conventional embedded compound semiconductor light emitting device. DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2, 2 'Semiconductor laminated body 3 Mesa part 4, 5, 6, 7 Semiconductor layer 10 Semiconductor layer 11 Semi-insulating semiconductor layer 12, 13 Electrode layer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-189984 (JP, A) JP-A-62-49687 (JP, A) JP-A-4-207090 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01S 3/18

Claims (2)

(57) [Claims] 1. A first semiconductor layer made of a compound semiconductor and having a first conductivity type, formed on a semiconductor substrate made of a compound semiconductor and having a first conductivity type, The second semiconductor layer, which is made of a compound semiconductor and has a second conductivity type opposite to the first conductivity type, is used to make sure that impurities that are made of a compound semiconductor and give a conductivity type are not intentionally introduced or introduced. Through the third semiconductor layer which is introduced only at a low concentration, if any, from the first semiconductor laminate having a configuration in which they are laminated in that order, from the side opposite to the semiconductor substrate side with respect to the first semiconductor laminate. A second semiconductor laminate having a mesa portion formed by an etching process to a depth reaching the first semiconductor layer from the first semiconductor layer is formed, and a second semiconductor laminate is formed on the second semiconductor laminate.
A semi-insulating semiconductor layer made of nP and exhibiting semi-insulating properties by introducing Fe is formed so as to fill the mesa portion, and on the semiconductor substrate, opposite to the second semiconductor laminated body side On the side, a first electrode layer is formed, on the top surface of the mesa portion of the second semiconductor laminate and on the top surface of the semi-insulating semiconductor layer, common to those continuously extending therebetween. In the buried compound semiconductor light emitting device in which the second electrode layer is formed, an impurity made of InP and giving a conductivity type is intended between the second semiconductor laminate and the semi-insulating semiconductor layer. The fourth semiconductor layer formed by the atomic layer epitaxial growth method, in which the impurity which gives the p-type is introduced only at a low concentration even if it is not or is introduced, is inserted. Feature Buried compound semiconductor light emitting device. 2. A first semiconductor layer made of a compound semiconductor and having a first conductivity type, and a first semiconductor layer made of a compound semiconductor and having a first conductivity type formed on a semiconductor substrate made of a compound semiconductor and having a first conductivity type. The second semiconductor layer having the second conductivity type opposite to the mold is made of a compound semiconductor and the impurity imparting the conductivity type is not intentionally introduced or is introduced only at a low concentration even if it is introduced. Forming a first semiconductor laminate having a configuration in which the third semiconductor layers are laminated in that order via a third semiconductor layer that has not been formed, and a side opposite to the semiconductor substrate side with respect to the first semiconductor laminate. Forming a second semiconductor laminate having a mesa portion from the first semiconductor laminate by an etching process to a depth reaching the inside of the first semiconductor layer from the second semiconductor laminate; Above, InP Forming a semi-insulating semiconductor layer having a semi-insulating property by introducing Fe so as to fill a mesa portion of the second semiconductor laminate by a vapor phase epitaxial growth method; On the side opposite to the second semiconductor laminate,
Forming a first electrode layer, and forming a first electrode layer on the top surface of the mesa portion of the second semiconductor layer and the upper surface of the semi-insulating semiconductor layer, the first electrode layer being common to those extending therebetween; Forming the second semiconductor layer from the first semiconductor layer after the step of forming the second semiconductor layer from the first semiconductor layer. Prior to the formation step, an impurity that is made of InP and that gives a conductivity type is introduced or not introduced into the second semiconductor laminate at a low concentration even if an impurity that gives a p-type is introduced. No fourth semiconductor layer is formed by atomic layer epitaxial growth.
Forming a buried compound semiconductor light emitting device so as to extend on the side surface of the mesa portion but not on the upper surface and to have a substantially uniform thickness at each portion.