JP2807150B2 - Environmental control device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an environmental control device,
More specifically, the present invention relates to an environment control device attached to a device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing such as a semiconductor device and a liquid crystal device.

[0002]

2. Description of the Related Art A device manufacturing apparatus for manufacturing a device requiring a clean environment when manufacturing a semiconductor device or a liquid crystal device needs to be placed in a clean environment.
The device manufacturing apparatus is usually installed in a clean room as shown in FIG.

[0003] Various clean rooms are shown in "Clean Room Handbook" (published by the Japan Air Purification Association), pp. 93-97. FIG. 15 shows the same book p9
6, which refers to the clean room shown in FIGS. 2, 2, and 13. In FIG. 15, reference numeral 51 denotes a device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing. The manufacturing apparatus 51 is installed in a clean space 52.

The air blown into the ceiling space 54 by the blower fan 53 is supplied to the clean space 52 after being cleaned by a high-performance filter 55. The air discharged from the clean space 52 to the underfloor space 56 passes through the first duct 57, and the conditioned outside air introduced from the outside passes through the second duct 58, and is sent into the ceiling space 54 by the blower fan 53.

[0005] However, providing such a clean room requires a large-scale manufacturing system for the above-described devices, requiring a large investment, and enormous maintenance costs in order to clean the entire clean room and maintain the cleanliness. Is required.

Accordingly, although not shown in the drawings, an environment control device installed in a device manufacturing apparatus for manufacturing a device requiring a clean environment at the time of manufacturing has recently been proposed.

[0007] The environmental control apparatus includes an airtight chamber containing clean air, a loading port provided in the chamber for loading a device into the chamber, and a device provided in the chamber and connecting the device to the device. It has a carry-out port for carrying out to the manufacturing apparatus, and a transfer means for carrying the device carried in from the carry-in port to the carry-out port.

[0008]

As devices such as semiconductor devices and liquid crystal devices become finer, the environment in which a device manufacturing apparatus for manufacturing such devices is installed has a higher degree of cleanliness. It has come to be required.

However, in the above-mentioned conventional environmental control device, a clean air supply device for supplying clean air to the chamber is required to clean the air in the chamber, and a small amount of air generated in the chamber is required. However, there is a problem that such impurities cannot be removed.

[0010] In view of the above, the present invention does not require a clean air supply device for supplying clean air into the chamber to clean the air in the chamber, and also removes trace impurities generated in the chamber. It is an object of the present invention to provide an environment control device that can perform the operation.

[0011]

According to the present invention, there is provided a device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing ,
A state where the loaded plate-like substrate is kept in a clean environment
To the substrate processing chamber of the device manufacturing equipment
A circulating fan that circulates gas inside the chamber, provided outside the chamber provided separately from the substrate processing chamber of the device manufacturing apparatus, for the environment control device for transporting, and the circulating gas is cleaned. And a gas circulating means having a high-performance filter, and a gas supplied from the gas circulating means is converted into a laminar flow parallel to the main surface of the plate-like substrate .

A solution specifically taken by the invention of claim 1 is attached to a device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing , and is carried in.
While holding the plate-like substrate in a clean environment,
To transfer to the substrate processing chamber of the vise manufacturing equipment
The environmental control target, based on the device manufacturing apparatus
An airtight chamber provided separately from the plate processing chamber , a carry-in port for carrying the plate-like substrate provided in the chamber in the first posture,
A carry-out port for carrying out a plate-like substrate provided in the chamber in a second posture different from the first posture to the substrate processing chamber of the device manufacturing apparatus from the chamber, and a plate-like substrate carried in from the carry-in entrance. Transfer means for changing the position of the plate-like substrate from the first position to the second position and transferring the plate-like substrate to the carry-out port, and provided outside the chamber and outside the substrate processing chamber ; A laminar flow parallel to the main surface of the plate-like substrate in the first position, having a circulation fan for circulating the gas in the chamber and a high-performance filter for cleaning the circulating gas; First gas circulating means for supplying the gas into the chamber, and processing the substrate outside the chamber and outside the chamber.
Provided outside the use chamber, the gas circulating a circulation fan for circulating the gas in the chamber and a high-efficiency filter to clean, a clean gas of a plate-shaped substrate of the second orientation Second gas circulating means for supplying into the chamber as a laminar flow parallel to the main surface is provided.

According to a second aspect of the present invention, in the first aspect, the first gas circulating means and the second gas circulating means have a physical adsorbent or a chemisorption for removing gaseous impurities from the circulating gas. This has the additional feature of having an impurity adsorbent made of an agent.

According to a third aspect of the present invention, in the configuration of the first or second aspect, at least one of the first gas circulation means and the second gas circulation means supplies an inert gas into the chamber. In addition, a configuration is provided in which an inert gas supply means is provided.

According to a fourth aspect of the present invention, in the configuration of the first to third aspects, the first gas circulating means and the second gas circulating means have a gas adjusting means for adjusting the temperature or humidity of the circulating gas. This is to add a configuration that the operation is performed.

Further, the solution means specifically taken by the invention of claim 5 is attached to a device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing , and is carried in.
While holding the cleaned plate-shaped substrate in a clean environment.
Transfer to the substrate processing chamber of the above device manufacturing equipment
Targeting because of the environment control apparatus, the substrate processing chamber of the device manufacturing apparatus and the chamber having an airtight provided separately, plate-like provided in the chamber
A loading port for loading a substrate into the chamber, and a substrate processing chamber of the device manufacturing apparatus from the chamber in the same attitude as when the plate-shaped substrate provided in the chamber is loaded from the loading port. and unloading opening for unloading a a transfer means for transferring the plate-like substrate carried from the carry-in entrance to the left by the unloading port of the posture when it is carried from the carry-in entrance, and outside of the chamber Provided outside the substrate processing chamber , having a circulating fan for circulating the gas in the chamber and a high-performance filter for cleaning the circulating gas, and providing a clean gas to the main surface of the plate-like substrate . And a gas circulating means for supplying a parallel laminar flow into the chamber.

According to a sixth aspect of the present invention, in the configuration of the fifth aspect, the gas circulating means has an impurity adsorbent comprising a physical adsorbent or a chemical adsorbent for removing gaseous impurities from the circulating gas. Is added.

According to a seventh aspect of the present invention, in addition to the configuration of the fifth or sixth aspect, a configuration is provided in which the gas circulation means has an inert gas supply means for supplying an inert gas into the chamber. Things.

An eighth aspect of the present invention is characterized in that the gas circulating means has a gas adjusting means for adjusting the temperature or humidity of the circulating gas to the structure of the fifth to seventh aspects. is there.

[0020]

According to the first aspect of the present invention, there are provided a first fan and a second fan having a circulation fan for circulating gas in the chamber and a high-performance filter for cleaning the circulating gas to supply clean gas into the chamber. Since the gas circulation means is provided, the gas to be cleaned is limited to the gas in the chamber, so that the amount of the gas to be cleaned can be small.

The first gas circulating means supplies the clean gas as a laminar flow parallel to the main surface of the device in a posture when the device is carried into the chamber, and the second gas circulating means Supplies a clean gas as a laminar flow parallel to the main surface of the device in the posture when the device is carried out to the device manufacturing apparatus, so that even if the device changes its posture, it remains on the main surface of the device. Since the laminar flow always flows parallel to the main surface, the gas supplied to the chamber does not stay or become turbulent on the main surface of the device.

According to the second aspect of the present invention, the first gas circulation means and the second gas circulation means have an impurity adsorbent comprising a physical adsorbent for removing gaseous impurities from the circulating gas or a chemical adsorbent. Therefore, an extremely clean gas from which gaseous impurities have been removed is supplied into the chamber.

According to the third aspect of the present invention, at least one of the first gas circulation means and the second gas circulation means has:
Since the inert gas supply means for supplying the inert gas into the chamber is provided, the inert gas is supplied as a laminar flow parallel to the main surface of the device.

According to the fourth aspect of the present invention, since the first gas circulating means and the second gas circulating means have the gas adjusting means for adjusting the temperature or humidity of the circulating gas, they are supplied into the chamber. Temperature or humidity of the gas can be adjusted to an optimum one.

According to the fifth aspect of the present invention, a gas circulation means for supplying a clean gas into the chamber as a laminar flow parallel to the main surface of the device is provided. The gas supplied to the chamber does not stay or become turbulent on the main surface of the device while reducing the amount of gas to be produced.

According to the structure of claim 6, similarly to the structure of claim 2, an extremely clean gas from which gaseous impurities have been removed is supplied into the chamber.

According to the configuration of claim 7, the inert gas is supplied as a laminar flow parallel to the main surface of the device, similarly to the configuration of claim 3.

According to the structure of the eighth aspect, similarly to the structure of the fourth aspect, the temperature or the humidity of the gas supplied into the chamber can be adjusted to an optimum value.

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1 to 5 show an environment control apparatus A1 according to a first embodiment of the present invention, and FIG.
3 is a sectional structure taken along the line III-III in FIG. 1, FIG. 4 is a sectional structure taken along the line IV-IV in FIG. 1, and FIG. 5 is a sectional structure taken along a line VV in FIG. Are respectively shown.

As shown in FIG. 1, the environment control device A1 comprises:
It is installed in a vertical electric furnace B1 as a device manufacturing apparatus.

As shown in FIGS. 1 to 5, the environment control device A
1 is provided with a rectangular parallelepiped chamber 10 having airtightness. A semiconductor substrate is provided on the upper wall 10a of the chamber 10.
Carry-in entrance 12 where C is carried in a horizontal state in the first posture.
Is provided on the bottom wall 10 b of the chamber 10.
There is provided an outlet 14 from which the semiconductor substrate C is carried out toward the vertical electric furnace B1 in the vertical state in the second posture. The semiconductor substrate C is stored in a closed container 18 for transport in a state of being stored in a substrate storage box 16 having a U-shaped cross section. It is placed on.

An elevating table 20a is provided inside the chamber 10.
And an elevator 20 having
When Oa is lowered, the bottom of the closed container for transport 18 placed on the entrance 12 of the chamber 10 (which is detachable from the container body and is locked to the container body when the closed container 18 for transport is transported. Is removed from the container body of the transporting closed container 18 and descends inside the chamber 10 while being placed on the elevating table 20a. Along with this, the substrate storage box 16 placed on the bottom of the closed container for transportation 18 and the semiconductor substrate C in the substrate storage box 16 also descend. The elevator 20 is provided with a substrate holding arm 22 that can expand and contract, rotate around an axis, and tilt. The substrate holding arm 22 holds the lowered storage box 16 and holds the semiconductor substrate C. After rotating the substrate storage box 16 by 90 degrees so that the substrate is in a vertical state, the substrate storage box 16 is placed on the carry-out port 14 of the chamber 10. The elevator 20, the elevating platform 20 a and the substrate holding arm 22 described above allow the loading port 1 to be used.
A transfer means for changing the semiconductor substrate C carried in from the second position from the first position to the second position and transferring the semiconductor substrate C to the carry-out port 14 is configured.

Hereinafter, a method for transferring the substrate storage box 16 from the loading port 12 of the chamber 10 to the loading port 14 of the chamber 10 will be described with reference to FIGS.

First, when the elevator 20a of the elevator 20 is lowered, as shown in FIGS. 6 and 7, the bottom of the closed container for transportation 18 is detached from the container body and placed on the elevator 20a. Since the inside of the chamber 10 descends, the substrate storage box 16 also descends inside the chamber 10.

Next, as shown in FIG. 8, after holding the substrate storage box 16 by the substrate holding arm 22, the posture of the substrate storage box 16 is changed so that the semiconductor substrate C changes from a horizontal state to a vertical state. .

Next, as shown in FIG. 9, the substrate holding arm 22 is extended and moved down to
Is placed in the outlet 14 of the chamber 10. Exit 14
Is loaded into the vertical electric furnace B1 by the transport system of the vertical electric furnace B1.

Again, as shown in FIGS. 1 to 5, outside the chamber 10, after extending downward from the bottom wall 10b of the chamber 10, bend and extend to the right in FIG. A first gas circulation duct 24 extending upward is provided, and the first gas circulation duct 24 is provided with a first gas circulation fan 26 for circulating gas in the chamber 10.
And a first high-performance filter 28 for cleaning the circulating gas. First high-performance filter 28
Is attached to the side wall 10c of the chamber 10,
The gas that has passed through the first high-performance filter 28 is converted into a laminar flow parallel to the main surface of the semiconductor substrate C in a horizontal state.
It is supplied within 0. The first gas circulation duct 24, the first gas circulation fan 26, and the first high-performance filter 28 described above constitute first gas circulation means.

Also, outside the chamber 10, after extending downward from the bottom wall 10b of the chamber 10, bend and extend to the left in FIG. 1, then bend and extend upward, and further bend to extend the chamber 10 A second gas circulation duct 30 extending upward is provided. The second gas circulation duct 30 is provided with a second gas circulation fan 32 for circulating the gas in the chamber 10 and a second gas circulation fan 32 for circulating the gas. And a second high-performance filter 34 for cleaning. The second high-performance filter 34 is attached to the upper wall 10a of the chamber 10, and the gas that has passed through the second high-performance filter 34 is converted into a vertical laminar flow parallel to the main surface of the semiconductor substrate C in the chamber 10. Supplied to Second gas circulation duct 30 and second gas circulation fan 3 described above
The second and second high-performance filters 34 constitute a second gas circulation unit.

Hereinafter, the chamber 1 will be described with reference to FIGS.
A method for cleaning the inside of 0 will be described. still,
2 to 5, the arrows indicate the direction in which the gas circulates.

First, when the semiconductor substrate C is in a horizontal state, the first gas circulation fan 26 is operated. In this way, the gas in the chamber 10 is sucked by the first gas circulation fan 26 and
4 is sucked inside. After the sucked gas rises through the inside of the first gas circulation duct 24, fine particles are removed by the first high-performance filter 28, and is supplied into the chamber 10 as a laminar horizontal flow. As a result, the clean gas passes through the main surface of the semiconductor substrate C in a horizontal state as a laminar flow flowing in the horizontal direction, so that extremely small fine particles mixed in the gas pass above the semiconductor substrate C and pass through the semiconductor substrate C. It does not adhere to the main surface of the substrate C.

Next, when the semiconductor substrate C is in the vertical state, the second gas circulation fan 32 is operated. In this way, the gas in the chamber 10 is sucked by the second gas circulation fan 32 and
It is sucked inside 0. After the sucked gas ascends through the inside of the second gas circulation duct 30, fine particles are removed by the second high-performance filter 34, and is supplied into the chamber 10 as a vertical laminar flow. As a result, the clean gas passes over the main surface of the semiconductor substrate C in a vertical state as a laminar flow in the vertical direction, so that extremely small fine particles mixed in the gas are removed along the main surface of the semiconductor substrate C by the semiconductor. It passes through the side of the substrate C and does not adhere to the main surface of the semiconductor substrate C.

As described above, the transfer of the semiconductor substrate C to the vertical electric furnace B1 can be performed in a highly purified closed space, so that the fine particles adhere to the main surface of the semiconductor substrate C. Can be reduced.

Hereinafter, an environment control device A2 according to a first modification of the first embodiment will be described with reference to FIG.

FIG. 10 shows a cross-sectional structure taken along the line II-II in FIG. 1, and corresponds to FIG. 2 of the first embodiment. In the first modified example, the same members as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 10, an impurity adsorbent 36 made of a physical adsorbent or a chemical adsorbent for removing gaseous impurities is provided on the upstream side of the first high-performance filter 28. Thereby, the first gas circulation duct 24
Gaseous impurities are removed from the gas flowing through the inside, and the amount of gaseous impurities in the gas supplied into the chamber 10 becomes several tens p.pt or less.

The general atmosphere contains various impurities that adversely affect the semiconductor device when the semiconductor device is manufactured. For example, a large amount of ammonia gas is generated from the human body, and is also present in a large amount in nature. The ammonia gas hinders the reaction of the chemically amplified resist used in the lithography process, which is one of the semiconductor device manufacturing processes, and changes the size of the resist pattern.
However, when the environment control device A2 according to the first modification is installed, the amount of gaseous impurities becomes several tens of p.pt or less, and the above-mentioned reaction inhibition does not occur, so that the yield of semiconductor devices is greatly improved.

Hereinafter, an environment control device A3 according to a second modification of the first embodiment will be described with reference to FIG.

FIG. 11 shows a cross-sectional structure taken along the line II-II in FIG. 1 and corresponds to FIG. 2 of the first embodiment. In the second modified example, the same members as those in the first embodiment and the first modified example are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 11, an inert gas supply duct 38 as an inert gas supply means for introducing an inert gas into the chamber 10 is provided at an upstream portion of the first gas circulation duct 24. The inert gas supply duct 38 is connected with a flow control valve 40 for adjusting the flow rate of the inert gas. An exhaust port 42 for exhausting a part of the gas flowing inside the first gas circulation duct 24 is provided at a downstream portion of the first gas circulation duct 24. Is provided with a damper 44 that opens the exhaust port 42 when the pressure in the first gas circulation duct 24 is higher than the atmospheric pressure and closes the exhaust port 42 when the pressure is negative.

When an inert gas such as nitrogen gas is introduced into the inert gas supply duct 38, the nitrogen gas is supplied into the chamber 10 through the impurity adsorbent 36 and the first high-performance filter 28. Thereby, the chamber 1
The gas inside 0 can be replaced with an inert gas.

It is preferable that the environment control apparatus A3 according to the second modification is installed in a sputtering apparatus in an electrode forming step which is one of the semiconductor manufacturing steps. In the electrode forming step, an electrode material is deposited on a semiconductor substrate. However, if the semiconductor substrate is exposed to the air during the deposition of the electrode material, a natural oxide film is formed on the semiconductor substrate. This natural oxide film
This changes the electrical contact resistance between the semiconductor substrate and the electrode material. However, when the environment control device A3 according to the second modification is installed in the sputtering device in the electrode forming step, the growth of the natural oxide film is suppressed, and the characteristics of the semiconductor device are stabilized, so that the yield of the semiconductor device is further increased. improves.

Hereinafter, an environment control device A4 according to a third modification of the first embodiment will be described with reference to FIG.

FIG. 12 shows a cross-sectional structure taken along the line II-II in FIG. 1 and corresponds to FIG. 2 of the first embodiment. In the third modified example, the same members as those in the first embodiment, the first modified example, and the second modified example are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 12, the first gas circulation duct 24 is provided with a heat exchanger 48 controlled by a controller 46. The controller 46 and the heat exchanger 48 constitute a gas adjusting means.
Temperature and humidity of the gas flowing through the gas circulation duct 24 can be controlled.

It is preferable to install the environment control device A4 according to the third modification in, for example, a resist coating device in a lithography process which is one of the semiconductor device manufacturing processes.
Since the thickness of the resist changes depending on the temperature and the humidity, it is necessary to strictly control the temperature and the humidity in order to keep the thickness of the resist constant. Therefore, the lithography process can be stabilized by installing the environment control device A4 according to the third modification.

Hereinafter, an environment control device A5 according to a second embodiment of the present invention will be described with reference to FIGS.

FIG. 13 shows an environment control device A5 according to a second embodiment of the present invention, and FIG.
4 shows a cross-sectional structure taken along line -XIV. In the second embodiment, the same members as those in the first embodiment are denoted by the same reference numerals, and the description is omitted.

In the environment control device A5 according to the second embodiment, the semiconductor substrate C is transferred to the carry-out port 14 in the same posture as when the semiconductor substrate C was carried in from the carry-in port 12.

The environment control device A5 is installed in a dry etching device B2 as a device manufacturing device. The dry etching apparatus B2 is generally an apparatus for single-wafer processing. That is, the board storage box 1 is
When 6 is placed, the transfer arm in the dry etching apparatus B2 takes in the semiconductor substrates C one by one into the dry etching apparatus B2. Therefore, as shown in FIG. 14, the substrate storage box 16 is installed at the carry-out port 14 so that the semiconductor substrate C is in a horizontal state.

In the environment control apparatus A5 according to the second embodiment, it is only necessary to supply a clean gas as a laminar flow in the horizontal direction to the inside of the chamber 10, and therefore, as in the first embodiment, the first gas Although the first gas circulation means including the circulation duct 24, the first gas circulation fan 26, and the first high-performance filter 28 is provided, the second gas circulation means provided in the first embodiment is provided. No means are provided.

[0062]

As described above, according to the environmental control apparatus of the first aspect of the present invention, a clean room having a circulating fan for circulating gas in a chamber and a high-performance filter for cleaning circulating gas is provided. Since the first and second gas circulating means for supplying a clean gas into the chamber are provided, the gas to be cleaned is limited to the gas in the chamber, and the amount of the gas to be cleaned is small. Cost can be reduced.

Further, the first gas circulating means is configured to supply clean gas parallel to the main surface of the plate-like substrate in the first position, which is the position when the plate-like substrate is carried into the chamber. The gas is supplied as a laminar flow, and the second gas circulating means is configured to clean gas with respect to the main surface of the plate-like substrate in the second position, which is the position when the plate-like substrate is carried out to the device manufacturing apparatus. to supply a parallel laminar flow, the plate of the plate-like substrate
Even if the substrate changes posture, a laminar flow parallel to the main surface is always blown, and the clean gas supplied to the chamber does not stay on the main surface of the plate-like substrate or become turbulent. , fine dust plate which has passed through the high-performance filter
Can be reduced the phenomenon of attachment of the main surface of the substrate, the yield of devices such as semiconductor devices and liquid crystal device is improved.

According to the second aspect of the present invention, the first gas circulating means and the second gas circulating means use a physical adsorbent or a chemical adsorbent for removing gaseous impurities from the circulating gas. Has an impurity adsorbent
Since an extremely clean gas from which gaseous impurities have been removed is supplied into the chamber, the yield of the device is further improved.

According to the third aspect of the present invention, at least one of the first gas circulation unit and the second gas circulation unit supplies an inert gas into the chamber. Means, the inert gas is supplied as a laminar flow parallel to the main surface of the plate-shaped substrate , preventing the gas flow in the chamber from being disturbed by the supply of the inert gas. Thus, the phenomenon that fine dust adheres to the main surface of the plate-like substrate can be reduced.

According to the fourth aspect of the present invention, the first gas circulating means and the second gas circulating means have the gas adjusting means for adjusting the temperature or humidity of the circulating gas. , can be adjusted to the temperature or humidity of the gas supplied into the chamber optimum, plate
Even when the film quality and film thickness of the film formed on the substrate are affected by temperature and humidity, the optimum film quality and film thickness can be secured.

According to the fifth aspect of the present invention, there is provided an environment control apparatus for supplying a clean gas into the chamber as a laminar flow parallel to the main surface of the plate-like substrate. As in the first aspect of the present invention, the amount of gas to be cleaned can be reduced and the cost can be reduced, and the clean gas supplied to the chamber stays on the main surface of the plate-like substrate or becomes turbulent. Since it does not flow, it is possible to reduce the phenomenon that fine dust passing through the high-performance filter adheres to the main surface of the plate-like substrate .

According to the sixth aspect of the present invention, the gas circulating means has an impurity adsorbent comprising a physical adsorbent or a chemical adsorbent for removing gaseous impurities from the circulating gas. As in the case of the second aspect of the present invention, since an extremely clean gas from which gaseous impurities have been removed is supplied into the chamber, the yield of the device is further improved.

According to the environment control apparatus of the present invention, the inert gas is supplied as a laminar flow parallel to the main surface of the plate-shaped substrate. Disturbance of the gas flow in the chamber due to the supply of the active gas can be prevented, and the phenomenon that fine dust adheres to the main surface of the plate-shaped substrate can be reduced.

According to the environmental control apparatus of the present invention, the gas circulating means has the gas adjusting means for adjusting the temperature or humidity of the circulating gas. can be adjusted to the temperature or humidity of the gas supplied into the chamber optimum, plate-like base
Optimal film quality and thickness can be ensured even when the quality and thickness of the film formed on the plate are affected by temperature and humidity.

[Brief description of the drawings]

FIG. 1 is a perspective view of an environment control device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

FIG. 3 is a sectional view taken along line III-III in FIG. 1;

FIG. 4 is a sectional view taken along line IV-IV in FIG.

FIG. 5 is a sectional view taken along line VV in FIG.

FIG. 6 is a view corresponding to FIG. 3 showing a method of transferring a semiconductor substrate in the environment control device according to the first embodiment.

FIG. 7 is a view corresponding to FIG. 2, illustrating a method of transferring a semiconductor substrate in the environment control device according to the first embodiment.

FIG. 8 is a view corresponding to FIG. 3, illustrating a method of transferring a semiconductor substrate in the environment control device according to the first embodiment.

FIG. 9 is a view corresponding to FIG. 3 illustrating a method of transferring a semiconductor substrate in the environment control device according to the first embodiment.

FIG. 10 shows an environment control apparatus according to a first modification of the first embodiment, and is a cross-sectional view taken along line II-II in FIG.

FIG. 11 shows an environment control device according to a second modification of the first embodiment, and is a cross-sectional view taken along line II-II in FIG.

FIG. 12 shows an environment control device according to a third modification of the first embodiment, and is a cross-sectional view taken along line II-II in FIG.

FIG. 13 is a perspective view of an environment control device according to a second embodiment of the present invention.

14 is a sectional view taken along line XIV-XIV in FIG.

FIG. 15 is a sectional view showing a conventional clean room.

[Explanation of symbols]

 A1, A2, A3, A4, A5 Environment control device B1 Vertical electric furnace (device manufacturing device) B2 Dry etching device (device manufacturing device) C Semiconductor substrate (device) 10 Chamber 12 Loading port 14 Loading port 16 Substrate storage box 18 Sealed container for transport 20 Elevator 20a Elevating platform 22 Substrate holding arm 24 First gas circulation duct 26 First gas circulation fan 28 First high-performance filter 30 Second gas circulation duct 32 Second gas Circulation fan 34 Second high-performance filter 36 Impurity adsorbent 38 Inert gas introduction duct 40 Flow control valve 42 Exhaust port 44 Damper 46 Controller 48 Heat exchanger

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-69955 (JP, A) JP-A-2-94647 (JP, A) JP-A-63-174333 (JP, A) 48438 (JP, A) JP-A-3-261161 (JP, A) JP-A-63-271951 (JP, A) JP-A-62-206826 (JP, A) JP-A-1-216551 (JP, A) JP-A-1-45333 (JP, A) JP-A-62-191439 (JP, U)

Claims (8)

(57) [Claims] 1. A device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing ,
A state where the loaded plate-like substrate is kept in a clean environment
To the substrate processing chamber of the device manufacturing equipment
An environment control device for transferring, comprising: an airtight chamber provided separately from the substrate processing chamber of the device manufacturing apparatus; and a plate-like substrate provided in the chamber, wherein the plate-like substrate is placed in a first position. A carry-in port for carrying into the chamber, and a plate-like substrate provided in the chamber, and carrying out a plate-like substrate from the chamber to a substrate processing chamber of the device manufacturing apparatus in a second posture different from the first posture. Transfer means for transferring the plate-like substrate loaded from the carry-in port from the first position to the second position, and transferring the plate-like substrate to the carry-out port; A circulating fan provided outside the substrate processing chamber and circulating the gas in the chamber, and a high-performance filter for cleaning the circulating gas. First gas circulating means for supplying a clean gas into the chamber as a laminar flow parallel to the main surface of the plate-like substrate in the first posture, and for processing the substrate outside the chamber and provided outside the chamber, the gas circulating a circulation fan for circulating the gas in the chamber and a high-efficiency filter to clean the main clean gas of a plate-shaped substrate of the second orientation An environmental control device comprising: a second gas circulation unit that supplies a laminar flow parallel to a plane into the chamber. 2. The first gas circulating means and the second gas circulating means have an impurity adsorbent comprising a physical adsorbent or a chemical adsorbent for removing gaseous impurities from the circulating gas. The environment control device according to claim 1, wherein: 3. At least one of the first gas circulation means and the second gas circulation means has an inert gas supply means for supplying an inert gas into the chamber. The environment control device according to claim 1. 4. The gas circulation means according to claim 1, wherein said first gas circulation means and said second gas circulation means have gas adjustment means for adjusting the temperature or humidity of the circulating gas.
The environment control device according to any one of the above. 5. A device manufacturing apparatus for manufacturing a plate-like device requiring a clean environment at the time of manufacturing ,
A state where the loaded plate-like substrate is kept in a clean environment
To the substrate processing chamber of the device manufacturing equipment
An environment control apparatus for transferring , wherein an airtight chamber provided separately from the substrate processing chamber of the device manufacturing apparatus, and a plate-shaped substrate provided in the chamber is provided in the chamber. A carry-in port for carrying in, and provided in the chamber, for carrying out a plate-like substrate from the chamber to a substrate processing chamber of the device manufacturing apparatus in the same posture as when the substrate is carried in from the carry-in port. A carry-out port, a transfer means for transferring the plate-like substrate carried in from the carry-in port to the carry-out port while maintaining the posture at the time of being carried in from the carry-in port, and a substrate processing chamber outside the chamber and outside the chamber and a high-performance filter for circulating the gas in the chamber and a high-performance filter for cleaning the circulating gas. An environmental control device, comprising: gas circulation means for supplying a body as a laminar flow parallel to a main surface of a plate-like substrate into the chamber. 6. The gas circulating means according to claim 5, wherein said gas circulating means has an impurity adsorbent comprising a physical adsorbent or a chemical adsorbent for removing gaseous impurities from the circulating gas. Environment control device. 7. The environment control device according to claim 5, wherein the gas circulation unit includes an inert gas supply unit that supplies an inert gas into the chamber. 8. The environment control apparatus according to claim 5, wherein said gas circulation means has gas adjustment means for adjusting the temperature or humidity of the circulating gas. .