JP2808601B2 - Production method of metal compound thin film - Google Patents
Production method of metal compound thin filmInfo
- Publication number
- JP2808601B2 JP2808601B2 JP63118605A JP11860588A JP2808601B2 JP 2808601 B2 JP2808601 B2 JP 2808601B2 JP 63118605 A JP63118605 A JP 63118605A JP 11860588 A JP11860588 A JP 11860588A JP 2808601 B2 JP2808601 B2 JP 2808601B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- substrate
- thin film
- film
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、金属化合物薄膜例えば複合金属酸化物薄膜
による超伝導薄膜の製法に係わる。The present invention relates to a method for producing a superconducting thin film using a metal compound thin film, for example, a composite metal oxide thin film.
［発明の概要］ 本発明は、金属化合物薄膜の生成にあたって、複数の
金属塩の原料溶液溜からそれぞれ霧状化した金属塩を含
有する霧を基体上に搬送し、これの上にこれら金属を含
む化合物薄膜を均一組成膜として、或いは超格子構造膜
として成膜させ、確実に所要の組成、構造を有する金属
化合物薄膜を得ることができるようにする。[Summary of the Invention] In the present invention, in forming a metal compound thin film, a mist containing a metal salt atomized from a plurality of raw material solution reservoirs of metal salts is transported onto a substrate, and these metals are deposited thereon. The compound thin film is formed as a uniform composition film or a superlattice structure film, so that a metal compound thin film having a required composition and structure can be reliably obtained.
［従来の技術］ 複合金属酸化物薄膜は、例えばＹ−Ba−Cu−Ｏ系超伝
導膜の作成方法として、例えば1988年春季、第35回応用
物理学会関係連合講演会予稿集31a−Ｗ−7,31a−Ｗ−8,
31a−Ｗ−10にその開示があるように、Y,Ba及びCuの各
金属塩を、最終的に得る超伝導膜の組成に対応する混合
比をもって混合した水溶液を原料溶液として用いて、霧
状熱分解法によって基体上に各金属の混合膜を生成し、
その後熱処理によってＹ−Ba−Cu−Ｏ系の複合酸化膜を
基体上に成膜するという方法の提案がある。[Prior Art] A composite metal oxide thin film is prepared, for example, as a method of forming a Y-Ba-Cu-O-based superconducting film, for example, in the spring of 1988, at the 35th Annual Meeting of the Japan Society of Applied Physics, 31a-W-. 7,31a−W−8,
As disclosed in 31a-W-10, an aqueous solution obtained by mixing each metal salt of Y, Ba and Cu at a mixing ratio corresponding to the composition of the superconducting film finally obtained is used as a raw material solution, Forming a mixed film of each metal on the substrate by linear pyrolysis,
After that, there has been proposed a method of forming a Y-Ba-Cu-O-based composite oxide film on a substrate by heat treatment.
この方法による場合、その原料溶液は、上述したよう
に、最終的に得る複合酸化物の組成に対応した混合比を
もって各金属塩を混合した溶液を用いることから、１つ
の原料供給源でつまり１作業で１組成の金属化合物薄膜
しか成膜することができない。また、この方法による場
合、実際上厳密には、原料液組成と膜組成にずれが生じ
易く、正確に目的とする組成の複合金属酸化物膜を得難
いという課題がある。これは、原料溶液中の各金属塩の
溶解度が異るため、薄膜生成が行なわれる基体温度が高
いことにより基体近傍の温度に原料溶液の霧が敏感に反
応し、特定の金属が析出してしまうなどに因るものと思
われる。According to this method, as described above, a solution obtained by mixing the metal salts with a mixing ratio corresponding to the composition of the finally obtained composite oxide is used as the raw material solution. Only one metal compound thin film can be formed by the operation. In addition, this method has a problem that, strictly speaking, a deviation is apt to occur between the raw material liquid composition and the film composition in practice, and it is difficult to obtain a composite metal oxide film having a desired composition accurately. This is because, because the solubility of each metal salt in the raw material solution is different, the fog of the raw material solution reacts sensitively to the temperature near the substrate due to the high temperature of the substrate on which the thin film is formed, and a specific metal is deposited. It seems to be due to such things as getting lost.
［発明が解決しようとする課題］ 本発明は、上述した課題の解決をはかり、膜組成の制
御性を高め、更に一連の作業で複数種の組成の金属化合
物薄膜を積層生成することができるようにして、例えば
超格子構造の薄膜の生成をも可能にした金属化合物薄膜
の製法を提供する。[Problems to be Solved by the Invention] The present invention is intended to solve the above-mentioned problems, enhance the controllability of the film composition, and make it possible to laminate and produce a plurality of types of metal compound thin films by a series of operations. Thus, there is provided a method for producing a metal compound thin film, for example, which can also produce a thin film having a superlattice structure.
［課題を解決するための手段］ 本発明は、第１図に示すように、複数の金属塩の原料
溶液溜S1,S2,S3・・・のそれぞれから、それぞれ霧状化
した金属塩を含有する霧を順次または同時に流量制御し
て基体（１）上に搬送し、この基体（１）上に金属を含
む堆積膜を生成する。このようにして堆積された薄膜
は、所要の雰囲気中で熱処理されて金属化合物薄膜とさ
れる。[Means for Solving the Problems] As shown in FIG. 1, the present invention relates to a method of forming atomized metals from a plurality of raw material solution reservoirs S 1 , S 2 , S 3 ... The mist containing the salt is transported onto the substrate (1) by controlling the flow rate sequentially or simultaneously, and a deposited film containing a metal is formed on the substrate (1). The thin film thus deposited is heat-treated in a required atmosphere to be a metal compound thin film.
［作用］ 本発明によれば、原料を霧状としてこれを熱分解して
基体上に目的とする金属を含む堆積を行なう方法（以下
これをMT−CVD（Mist Transport Chemical Vapour Depo
sition）と略称する）によるものであるが、本発明では
複数の原料溶液溜からの溶液を霧状化して基体（１）上
に送り込むようにしたことから、例えば溶解度の異る金
属塩については、異る原料溶液溜から、それぞれの溶液
の霧として送り込めば、その各流量の調整によって、基
体（１）上での各混合比を正確に制御、選定することが
できて目的とする組成の薄膜を基体（１）上に確実に生
成することができる。また、各原料溶液溜からの原料の
供給量の調整によって組成比が異る，或いは異種の薄
膜、すなわち異なる組成の薄膜を一連の作業で順次積層
させることができることから、超格子構造による薄膜を
生成することが可能となる。[Operation] According to the present invention, a method of forming a mist of a raw material and thermally decomposing the mist to deposit on a substrate containing a target metal (hereinafter referred to as MT-CVD (Mist Transport Chemical Vapor Depo)
In the present invention, since the solutions from a plurality of raw material solution reservoirs are atomized and sent onto the substrate (1), for example, metal salts having different solubilities are not used. If each solution is fed as a mist from a different raw material solution reservoir, each mixing ratio on the substrate (1) can be accurately controlled and selected by adjusting the respective flow rates, so that the desired composition can be obtained. Can reliably be formed on the substrate (1). In addition, thin films having different composition ratios or different types of thin films, that is, thin films having different compositions can be sequentially laminated by a series of operations by adjusting the amount of raw material supplied from each raw material solution reservoir. Can be generated.
［実施例］ 第２図に示すように、Ｙ−Ba−Cu−Ｏ系超伝導膜例え
ばYBa2Cu3O7-8による第１及び第２の超伝導薄膜（11）
及び（12）間にZnO誘電体薄膜（13）を介在させて積層
してジョセフソン素子を構成する場合の一例を説明す
る。Example As shown in FIG. 2, first and second superconducting thin films made of a Y—Ba—Cu—O-based superconducting film, for example, YBa 2 Cu 3 O 7-8 (11)
An example in which a Josephson element is formed by laminating a ZnO dielectric thin film (13) between (12) and (12) will be described.
この場合、例えば第１図に示す１の原料溶液溜S1にＹ
（NO3）３の水溶液を収容し、他の原料溶液溜S2にBa（N
O3）２の水溶液を収容し、更に他の原料溶液溜S3にCu
（NO3）２の水溶液を収容する。また他の原料溶液溜S4
には、ZnCl2水溶液を収容する。各溜S1〜S4にはそれぞ
れ霧化装置（２）、例えば超音波振動子による霧化装置
いわゆる超音波加湿器を設け、これにより霧化された各
原料をそれぞれ流量調整弁B1,B2,B3・・・を介して、例
えば共通の原料供給路（４）を通じて反応室（５）に配
したノズル（６）からキャリアガスの例えば不活性ガス
或いは酸素O2によって送り込み各原料霧を混合して同時
に送り込む。In this case, for example, Y is stored in one raw material solution reservoir S1 shown in FIG.
(NO 3) 3 aqueous solution were housed, other raw material solution reservoir S 2 to Ba (N
O 3) accommodates a 2 aqueous solution, Cu yet another raw material solution reservoir S 3
(NO 3 ) 2 aqueous solution. Another raw material solution reservoir S 4
Contains an aqueous solution of ZnCl 2 . Each of the reservoirs S 1 to S 4 is provided with an atomizing device (2), for example, an atomizing device using an ultrasonic vibrator, that is, an ultrasonic humidifier, and the raw materials atomized by the devices are flow-regulated valves B 1 , Via B 2 , B 3 ..., For example, a common raw material supply path (4), a nozzle (6) disposed in the reaction chamber (5) is fed by a carrier gas, for example, an inert gas or oxygen O 2 , and each raw material is fed. Mix the fog and send in at the same time.
反応室（５）内には、成膜を行なうべき基体（１）例
えば石英基板を，ヒータ等の手段（７）を具備する基台
（８）上に載置配置する。In the reaction chamber (5), a substrate (1) on which a film is to be formed, for example, a quartz substrate, is placed on a base (8) provided with means (7) such as a heater.
そして基体（１）を322℃に加熱し、原料溶液溜S1,
S2,S3の各調整弁B1,B2,B3を所要量開き、各溶液溜S1〜S
3からのY,Ba,Cuの各硝酸塩を霧状となしてO2キャリアガ
スによってノズル（６）からこれら各硝酸塩の混合霧を
噴出させて基体（１）に接触させる。このようにする
と、基体（１）上で熱分解された、各元素Y,Ba,Cuの混
合物膜が基体（１）上に堆積される。次に各調整弁B1〜
B3を閉塞して各溶液溜S1〜S3からのY,Ba,Cuの原料霧の
供給を断ち、調整弁B4を所要量開いて原料溶液溜S4から
のZnCl2霧をキャリアガスにのせてノズル（６）から噴
出させて、基体（１）上で熱分解してZn膜を先に形成し
たY,Ba,Cuによる混合膜上に堆積させる。次に、調整弁B
4を閉じ、再び調整弁B1〜B3を所要量開き、上述したと
同様に基体（１）上にY,Ba,Cuの混合膜を堆積させる。
次に各調整弁B1〜B4を閉じ、O2ガスのみを送り、基体
（１）を例えば900℃に加熱し１時間の熱処理を行う。
このようにすると、基体（１）上に、Ｙ−Ba−Cu−Ｏ系
の複合金属酸化膜による第１及び第２の超伝導薄膜（1
1）及び（12）と、これら間にZnO誘電体薄膜（13）が介
在された積層構造薄膜によるジョセフソン素子を形成す
ることができる。そして、この場合、第１及び第２の超
伝導薄膜（11）及び（12）を生成するためのMT−CVDに
当って各調整弁B1〜B3によって最終的に得ようとする第
１及び第２の超伝導薄膜（11）及び（12）の組成YBa2Cu
3O7-8の各元素Y,Ba,Cuの原子比に応じて各溶液溜S1〜S3
からの霧の相対的流量を制御して供給する。Then, the substrate (1) is heated to 322 ° C., and the raw material solution reservoir S 1 ,
Open the required amount of each of the adjusting valves B 1 , B 2 , B 3 of S 2 , S 3 , and open the respective solution reservoirs S 1 to S
Each of the nitrates of Y, Ba, and Cu from 3 is atomized, and a mixed mist of each of these nitrates is ejected from the nozzle (6) by the O 2 carrier gas to be brought into contact with the substrate (1). In this way, a mixture film of each of the elements Y, Ba, and Cu thermally decomposed on the substrate (1) is deposited on the substrate (1). Next, each adjustment valve B 1
Y of the B 3 from the solution reservoir S 1 to S 3 are closed, Ba, cut off the supply of the raw material mist Cu, the ZnCl 2 fog adjustment valve B 4 from requirements open source solution reservoir S 4 and carrier It is jetted from a nozzle (6) in a gas, and is thermally decomposed on the substrate (1) to deposit a Zn film on the previously formed mixed film of Y, Ba, Cu. Next, adjusting valve B
4 closed, opening required amount adjusting valve B 1 .about.B 3 again, Y on the base (1) in the same manner as described above, Ba, depositing a mixed film of Cu.
Then close the respective adjusting valves B 1 .about.B 4, O 2 gas only feed, heat treatment is performed for one hour to heat the substrate (1) for example, 900 ° C..
By doing so, the first and second superconducting thin films (1) made of a Y—Ba—Cu—O-based composite metal oxide film are formed on the substrate (1).
1) and (12), and a Josephson element can be formed by a laminated thin film having a ZnO dielectric thin film (13) interposed therebetween. In this case, the first to be obtained finally hitting the MT-CVD for generating the first and second superconducting thin film (11) and (12) by respective adjusting valves B 1 .about.B 3 And the composition of the second superconducting thin films (11) and (12) YBa 2 Cu
Each solution reservoir S 1 to S 3 according to the atomic ratio of each element Y, Ba, Cu of 3 O 7-8
To control the relative flow of fog from the plant.
第１及び第２の超伝導薄膜（11）及び（12）は、その
厚さを例えば5000Åに、また、これら間に形成するZnO
誘電体膜（13）はその厚さを20〜100Åに形成し得る。The first and second superconducting thin films (11) and (12) have a thickness of, for example, 5000 ° and a ZnO layer formed between them.
The dielectric film (13) can be formed to have a thickness of 20 to 100 °.
尚、上述した例では、各溶液溜S1〜S4として水溶液系
の溶液を用いた場合であるが、例えば誘電体膜（13）
を、PbTiO3によって構成する場合、そのMT−CVDにおい
て、上述の溶液溜S4として、有機系溶液のPb（Ｏ−ｉ−
C3H7）２［鉛ジ・イソ・プロポキシド］とTi（Ｏ−ｉ−
C3H7）４［チタン・テトラ・イソ・プロポキシド］との
混合のイソプロピルアルコール溶液を用いるとか、Pbと
Tiとを分けたこの原料溶液溜を用い、一方をPb（CH3CO
O）２とし他方をTiCl4とする各水溶液系とすることもで
きる。In the example described above, although a case of using a solution of aqueous as each solution reservoir S 1 to S 4, for example, a dielectric film (13)
A case constituted by PbTiO 3, in its MT-CVD, as a solution reservoir S 4 described above, the organic solution Pb (O-i-
C 3 H 7 ) 2 [Lead di-iso-propoxide] and Ti (Oi-
Toka using C 3 H 7) 4 isopropyl alcohol solution of a mixture of [titanium tetra-iso-propoxide, and Pb
This raw material solution reservoir separated from Ti is used, and one is Pb (CH 3 CO
O) 2 and the other solution may be TiCl 4 .
また、上述した例では、第１及び第２の超伝導薄膜
（11）及び（12）を形成するMT−CVDに当って各Y,Ba,Cu
の原料の霧を混合して基体（１）に向って送って、Y,B
a,Cuが混合した堆積膜を形成して最終的にY,Ba,Cuの混
合酸化物膜を形成した場合であるが、これら霧を順次的
に例えば繰返し送り込んで、Ｙの超薄膜層と、Baの超薄
膜層と、Cuの超薄膜層とを各層の原子層数を1:2:3にな
るよう繰返し積層して、それぞれY,Ba,Cuの堆積層を形
成し、酸化処理によって各酸化物層の積層による超格子
構造の超伝導薄膜を形成することもできる。Further, in the above-described example, each of Y, Ba, Cu is used in the MT-CVD for forming the first and second superconducting thin films (11) and (12).
The raw material mist is mixed and sent toward the substrate (1), and Y, B
This is the case where a deposited film in which a and Cu are mixed is finally formed to form a mixed oxide film of Y, Ba and Cu.These fogs are sequentially and repeatedly fed, for example, to form an ultra-thin Y layer. , Ba ultra-thin layer and Cu ultra-thin layer are repeatedly laminated so that the atomic layer number of each layer is 1: 2: 3, respectively, Y, Ba, Cu deposited layers are formed, and oxidation treatment is performed. A superconducting thin film having a superlattice structure can be formed by stacking the respective oxide layers.
また、上述した例では、各原料溶液溜を各金属につい
て個々に設けた場合であるが、例えば溶解度がほぼ同等
の２種以上の金属の塩を混合して複数の原料溶液溜とす
ることもできる。Further, in the above-described example, each raw material solution reservoir is provided individually for each metal, but for example, a plurality of raw material solution reservoirs may be prepared by mixing salts of two or more metals having substantially the same solubility. it can.
例えば第１図の１の原料溶液溜S1として元素Ａと元素
Ｂの各塩の混合溶液を用い、他の原料溶液溜S2として元
素Ｃと元素Ｄの各塩の混合溶液を用い、更に他の原料溶
液溜S3として元素Ｅと元素Ｆの各塩の混合溶液を用い
て、これら溶液の霧を例えば順次的に送給し、AB−CD−
EFの堆積物を順次形成し、これを熱処理することによっ
て例えばＡとＢの複合酸化物−ＣとＤの複合酸化物−Ｅ
とＦの複合酸化物−・・・の超格子構造の積層による薄
膜を生成することもできる。For example using a mixed solution of each salt of the element A and the element B as a raw material solution reservoir S 1 1 of FIG. 1, using a mixed solution of each salt of the element C and the element D as another raw material solution reservoir S 2, further using a mixed solution of each salt of the element E and the element F as another raw material solution reservoir S 3, send a mist of the solution for example sequentially feeds, AB-CD-
By sequentially forming a deposit of EF and subjecting it to a heat treatment, for example, a composite oxide of A and B—a composite oxide of C and D—E
And a composite oxide of F and a superlattice structure can be formed as a thin film.
また、上述した例では金属の酸化膜の形成に本発明を
適用した場合であるが、他の金属の化合物膜の形成に本
発明を適用することもできる。In the above example, the present invention is applied to the formation of a metal oxide film. However, the present invention can be applied to the formation of another metal compound film.
［発明の効果］ 本発明方法によって例えば基体温度322℃で、第１図
の原料溶液溜S1〜S3から同時に各原料の霧を例えば石英
基体上に形成したＹ−Ba−Ｏ系堆積膜を酸素雰囲気中で
900℃１時間の熱処理した後の薄膜についてＸ線回折に
よる分析を行った結果は第３図に示すようになって主相
は目的相であるYBa2Cu3O7-8でありかつ斜方晶となって
いることが分かる。また、この場合副生成相はCuOが主
である。By the method of the present invention [Effect of the Invention], for example a substrate temperature of 322 ℃, Y-Ba-O-based deposited films formed mist of each raw material at the same time from a feed solution reservoir S 1 to S 3 of FIG. 1, for example, on a quartz substrate In an oxygen atmosphere
The thin film after heat treatment at 900 ° C. for 1 hour was analyzed by X-ray diffraction. The result is shown in FIG. 3, where the main phase was the target phase YBa 2 Cu 3 O 7-8 and the oblique It turns out that it has become a crystal. In this case, the by-product phase is mainly CuO.
上述したように、本発明によれば、原料を霧状として
これを熱分解して基体上に目的とする金属を含む堆積を
行うMT−CVDによるものであるが、本発明では複数の原
料溶液溜からの溶液を霧状化して基体（１）上に送り込
むようにしたことから、例えば溶解度の異る金属塩につ
いては、異る原料溶液溜から、それぞれの溶液の霧とし
て送り込めば、その各流量の調整によって、基体（１）
上での各混合比を正確に制御、選定することができて目
的とする組成の薄膜を基体（１）上に確実に生成するこ
とができる。そして、本発明方法においては、各原料溶
液溜からの原料の供給量の変更調整によって組成比が異
る，或いは異種の薄膜、すなわち異なる組成の薄膜を一
連の作業で順次積層させるものであり、このようにして
例えば超格子構造による薄膜を生成することが可能とな
り、実用上大なる利益をもたらすものである。As described above, according to the present invention, the raw material is atomized, and is thermally decomposed to deposit the target metal on the substrate by MT-CVD. Since the solution from the reservoir is atomized and sent onto the substrate (1), for example, for metal salts having different solubilities, if each solution is sent as a mist from different raw material solution reservoirs, By adjusting each flow rate, the substrate (1)
Each of the above mixing ratios can be accurately controlled and selected, and a thin film having a desired composition can be reliably formed on the substrate (1). In the method of the present invention, thin films having different composition ratios or different types of thin films, that is, thin films having different compositions are sequentially laminated in a series of operations by changing and adjusting the supply amount of the raw material from each raw material solution reservoir, In this way, for example, a thin film having a superlattice structure can be formed, which brings great practical benefits.
第１図は本発明製法を実施する装置の一例の構成図、第
２図は本発明製法によって得る薄膜構造の一例の断面
図、第３図はＸ線回折パターン図である。 （１）は基体、（11）及び（12）は第１及び第２の超伝
導薄膜、（13）は誘電体膜、S1,S2,S3・・・は原料溶液
溜、（２）はその霧化装置、B1,B2,B3・・・は流量調整
弁である。FIG. 1 is a structural view of an example of an apparatus for performing the manufacturing method of the present invention, FIG. 2 is a cross-sectional view of an example of a thin film structure obtained by the manufacturing method of the present invention, and FIG. 3 is an X-ray diffraction pattern diagram. (1) is a substrate, (11) and (12) are first and second superconducting thin films, (13) is a dielectric film, S 1 , S 2 , S 3 ... ) Is the atomizing device, and B 1 , B 2 , B 3 ... Are flow control valves.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 斉藤 真樹 東京都品川区北品川６丁目７番35号 ソ ニー株式会社内 (72)発明者 上平 曉 東京都品川区北品川６丁目７番35号 ソ ニー株式会社内 (56)参考文献 特開 昭64−67827（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C01G 1/00 - 57/00 C23C 16/30 H01L 39/22 - 39/24 H01B 12/00────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Maki Saito 6-7-35 Kita Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Akira Uehira 6-35 Kita Shinagawa, Shinagawa-ku, Tokyo (56) References JP-A-64-67827 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C01G 1/00-57/00 C23C 16/30 H01L 39/22-39/24 H01B 12/00
Claims (1)
ら、それぞれ霧状化した金属塩を含有する霧をその流量
を調整して基体上に搬送し、該基体上に、上記金属を含
む化合物による複数の異なる組成による薄膜を順次堆積
させることを特徴とする金属化合物薄膜の製法。A mist containing a metal salt atomized from each of a plurality of metal salt raw material solution reservoirs is transported onto a substrate by adjusting the flow rate thereof, and the metal containing the metal is contained on the substrate. A method for producing a metal compound thin film, comprising sequentially depositing a plurality of thin films having different compositions of a compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63118605A JP2808601B2 (en) | 1988-05-16 | 1988-05-16 | Production method of metal compound thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63118605A JP2808601B2 (en) | 1988-05-16 | 1988-05-16 | Production method of metal compound thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01290507A JPH01290507A (en) | 1989-11-22 |
| JP2808601B2 true JP2808601B2 (en) | 1998-10-08 |
Family
ID=14740702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63118605A Expired - Fee Related JP2808601B2 (en) | 1988-05-16 | 1988-05-16 | Production method of metal compound thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2808601B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2600100B2 (en) * | 1993-06-15 | 1997-04-16 | 工業技術院長 | Manufacturing method of oxide fine particle laminated film |
| JP5205904B2 (en) * | 2006-09-29 | 2013-06-05 | 大日本印刷株式会社 | Method for producing metal oxide film and laminate |
| JP5309462B2 (en) * | 2006-09-29 | 2013-10-09 | 大日本印刷株式会社 | Method for producing metal oxide film and laminate |
| JP5205930B2 (en) * | 2007-11-12 | 2013-06-05 | 大日本印刷株式会社 | Method for producing metal oxide film |
| DE102010055042B4 (en) * | 2010-12-17 | 2013-06-06 | Eads Deutschland Gmbh | Method and apparatus for forming an electrolyte film on an electrode surface |
| CN115738894B (en) * | 2023-01-05 | 2023-04-18 | 河南电池研究院有限公司 | Lithium ion battery anode material with superlattice structure and nozzle and method for preparing lithium ion battery anode material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6467827A (en) * | 1987-09-08 | 1989-03-14 | Toru Matsushita | Manufacture of superconductor ceramic thin film |
-
1988
- 1988-05-16 JP JP63118605A patent/JP2808601B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01290507A (en) | 1989-11-22 |
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