JP2809657B2 - X-ray image tube and method of manufacturing the same - Google Patents
X-ray image tube and method of manufacturing the sameInfo
- Publication number
- JP2809657B2 JP2809657B2 JP63324924A JP32492488A JP2809657B2 JP 2809657 B2 JP2809657 B2 JP 2809657B2 JP 63324924 A JP63324924 A JP 63324924A JP 32492488 A JP32492488 A JP 32492488A JP 2809657 B2 JP2809657 B2 JP 2809657B2
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- input
- fluorescent layer
- layer
- substrate
- thin film
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- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】 [発明の目的] (産業上の利用分野) この発明はX線イメージ管及びその製造方法に係り、
特にその入力面の改良に関する。The present invention relates to an X-ray image tube and a manufacturing method thereof.
In particular, it relates to improvement of the input surface.
(従来の技術) 一般にX線イメージ管は、真空外囲器内の入力側に入
力面が設けられ、出力側に陽極及び出力面が設けられて
いる。更に、真空外囲器内の側壁に沿い入力側から出力
側にかけて、集束電極が配設されている。(Prior Art) Generally, an X-ray image tube is provided with an input surface on an input side in a vacuum envelope, and an anode and an output surface on an output side. Further, a focusing electrode is provided along the side wall in the vacuum envelope from the input side to the output side.
ところで、従来の入力面は第10図及び第11図に示すよ
うに構成され、第11図は第10図の入力面の周辺部110を
拡大模式化したものである。By the way, the conventional input surface is configured as shown in FIGS. 10 and 11, and FIG. 11 is an enlarged schematic view of a peripheral portion 110 of the input surface in FIG.
即ち、入力面は、表面が平滑な入力基板101と、この
入力基板101上に低真空度の下に蒸着法で形成されNaで
活性化されたCsIを母体とする第1蛍光層102と、この第
1蛍光層102上に高真空度の下に蒸着法で形成された第
2蛍光層103と、これら第1蛍光層102、第2蛍光層103
及び入力基板101のそれぞれ各周縁部を覆うように形成
された環状金属薄膜104と、第2蛍光層103上に直接又は
他の薄層を介して間接的に形成された光電面(図示せ
ず)とからなっている。That is, the input surface has an input substrate 101 having a smooth surface, a first fluorescent layer 102 formed on the input substrate 101 by a vapor deposition method under a low vacuum and activated by Na and CsI, and A second fluorescent layer 103 formed on the first fluorescent layer 102 by a vapor deposition method under a high vacuum, and the first fluorescent layer 102 and the second fluorescent layer 103
And an annular metal thin film 104 formed to cover each peripheral portion of the input substrate 101, and a photoelectric surface (not shown) formed directly on the second fluorescent layer 103 or indirectly via another thin layer. ).
そして、第1蛍光層102と第2蛍光層103とにより、い
わゆる入力蛍光層105が構成されている。The first fluorescent layer 102 and the second fluorescent layer 103 constitute a so-called input fluorescent layer 105.
環状金属薄膜104は、第2蛍光層103上の光電面と、入
力面を保持する例えば金属薄板電極との間を電気的に接
続するための機能を有している。又、環状金属薄膜104
の内径は、ほぼ入力面の有効径の値に設定される。環状
金属薄膜104の他の機能として、入力蛍光層105の有効径
外の部分からの蛍光による電子放出を遮断する機能も有
している。The ring-shaped metal thin film 104 has a function for electrically connecting the photocathode on the second fluorescent layer 103 to, for example, a thin metal plate electrode holding the input surface. Also, the annular metal thin film 104
Is set to a value substantially equal to the effective diameter of the input surface. As another function of the annular metal thin film 104, it also has a function of blocking electron emission due to fluorescence from a portion of the input fluorescent layer 105 outside the effective diameter.
第1蛍光層102は5μm〜50μmの平均直径を有し且
つ入力基板101に対しほぼ垂直に成長したCsIの柱状結晶
の集合体であり、代表的な膜厚は約400μmである。こ
のように、隣接し合ったCsIの柱状結晶は、互いに微細
な隙間によって分離しているため、高い解像特性を有す
る半面その表面に直接光電面が形成された場合には、光
電面も同様に分離した微小島状に区画されてしまい、光
電面の面に平行な方向の電気的な導通が得られない。The first fluorescent layer 102 is an aggregate of columnar crystals of CsI having an average diameter of 5 μm to 50 μm and grown almost perpendicular to the input substrate 101, and has a typical thickness of about 400 μm. As described above, since the adjacent columnar crystals of CsI are separated from each other by fine gaps, when the photoelectric surface is directly formed on the half surface having high resolution characteristics, the photoelectric surface is also similar. Therefore, electrical conduction in a direction parallel to the surface of the photocathode cannot be obtained.
その結果、光電面から放出される光電子の数の増加に
伴い、光電面の電位を一定に保つことが出来なくなり、
X線イメージ管の電子光学的な均一性が著しく損なわ
れ、出力像の歪みや解像特性の劣化が引起こされる。As a result, as the number of photoelectrons emitted from the photocathode increases, the potential of the photocathode cannot be kept constant,
The electron-optical uniformity of the X-ray image tube is significantly impaired, resulting in distortion of an output image and deterioration of resolution characteristics.
そのため、第1蛍光層102の表面には、10μm〜30μ
mの膜厚の第2蛍光層103が形成される。この第2蛍光
層103は、比較的連続した表面を有しているため、この
表面に形成される光電面の面に平行な方向の電気的導通
を確保することが出来る。Therefore, the surface of the first fluorescent layer 102 has a thickness of 10 μm to 30 μm.
A second fluorescent layer 103 having a thickness of m is formed. Since the second fluorescent layer 103 has a relatively continuous surface, electrical conduction in a direction parallel to the surface of the photoelectric surface formed on this surface can be ensured.
従来、入力基板101の上に第1蛍光層102と第2蛍光層
103を蒸着するために、第12図に示されるような蒸着装
置が使用され、入力基板101は蒸着槽109内の自転可能な
基板ホルダー106に固定される。そして、入力基板101を
自転させながら蒸発源108から蛍光体を低真空度の下で
蒸発させ、入力基板101上に第1蛍光層102を成膜する。
基板ホルダー106の入力基板101が直接載る部分の開口部
の内径(以下、開口径と呼ぶ)は、X線イメージ管の入
力面有効径よりもやや大きめの値に設定されている。Conventionally, a first fluorescent layer 102 and a second fluorescent layer
In order to deposit 103, a deposition apparatus as shown in FIG. 12 is used, and the input substrate 101 is fixed to a rotatable substrate holder 106 in a deposition tank 109. Then, the phosphor is evaporated from the evaporation source 108 under a low degree of vacuum while rotating the input substrate 101 to form the first fluorescent layer 102 on the input substrate 101.
The inner diameter of the opening of the portion of the substrate holder 106 where the input substrate 101 directly rests (hereinafter, referred to as the opening diameter) is set to a value slightly larger than the effective diameter of the input surface of the X-ray image tube.
第1蛍光層102に続いて第2蛍光層103を成膜するに当
たって、蒸着槽109を大気圧に戻さず、又、入力基板101
を基板ホルダー106より取外すことなく、高真空状態に
て蒸着を再開させることは、原理上は全く問題なく可能
である。In forming the second fluorescent layer 103 following the first fluorescent layer 102, the deposition tank 109 is not returned to the atmospheric pressure and the input substrate 101
It is possible, in principle, to restart the deposition in a high vacuum state without removing the substrate from the substrate holder 106 without any problem.
しかしながら、同一の基板ホルダー106にて、第2蛍
光層103の蒸着を引き続き行った場合、環状金属薄膜104
が部分的に不連続となり、実用化出来ないことが判っ
た。However, when the second phosphor layer 103 is continuously deposited on the same substrate holder 106, the annular metal thin film 104
Was partially discontinuous and could not be put to practical use.
以下、第10図に示される入力面の周辺部110を拡大模
式化した第11図を参照しながら、詳しく説明する。Hereinafter, a detailed description will be given with reference to FIG. 11, which is an enlarged schematic diagram of the peripheral portion 110 of the input surface shown in FIG.
即ち、第11図でAと示した領域は基板ホルダー106で
マスクされた部分であり、Bと示した領域は基板ホルダ
ー106でマスクされない部分、即ち、基板ホルダー106の
開口部に対応する部分である。第1蛍光層102は、低真
空中で蒸着されるため、A領域にも一部回り込んで成膜
されている。一方、第2蛍光層103は、高真空の下で蒸
着されるため、A領域には殆ど成膜されない。従って、
第1蛍光層102の表面は、B領域では、第2蛍光層103に
より連続性が高められているが、A領域では、柱状結晶
111間の隙間112が第2蛍光層103により埋められず、不
連続な表面状態となっている。That is, the region indicated by A in FIG. 11 is a portion masked by the substrate holder 106, and the region indicated by B is a portion not masked by the substrate holder 106, that is, a portion corresponding to the opening of the substrate holder 106. is there. Since the first fluorescent layer 102 is deposited in a low vacuum, the first fluorescent layer 102 is formed so as to partially reach the region A. On the other hand, since the second fluorescent layer 103 is deposited under a high vacuum, it is hardly formed in the region A. Therefore,
The continuity of the surface of the first fluorescent layer 102 is increased by the second fluorescent layer 103 in the region B, but the columnar crystal is formed in the region A.
The gap 112 between 111 is not filled with the second fluorescent layer 103, and has a discontinuous surface state.
この蛍光層の表面に成膜される環状金属薄膜104は、
例えばAlを材料とし、0.1μm乃至10μmの厚みに形成
されるが、A領域に回り込んで成膜されている蛍光層上
では、柱状結晶111の表面に島状に成膜されて、実質的
に導通不能な状態となる。The annular metal thin film 104 formed on the surface of the fluorescent layer is
For example, Al is used as a material and is formed to a thickness of 0.1 μm to 10 μm. On the fluorescent layer formed around the region A, a film is formed in an island shape on the surface of the columnar crystal 111 and substantially formed. Into a non-conductive state.
以上、説明したような問題が生じるため、従来は、第
1蛍光層102を成膜後、一旦、蒸着装置から入力基板101
を取出し、より大きい開口径を有する基板ホルダー106
に固定し直した後、蒸着工程を再開する必要があった。
ここで、第1蛍光層102を成膜する場合の基板ホルダー1
06の開口径をD1、第2蛍光層103を成膜する場合の基板
ホルダー106の開口径をD2、A領域に回り込んで成膜さ
れた第1蛍光層102の長さをlとするとき、D1、D2、l
の間には、 D2≧D1+l の関係が満たされる必要がある。上記のような2段階の
蛍光層の蒸着工程を踏んで第1蛍光層102と第2蛍光層1
03を成膜した後、環状金属薄膜104を蒸着して得られる
入力面の周辺部を拡大模式化したものが第13図である。As described above, since the above-described problem occurs, conventionally, after the first fluorescent layer 102 is formed, the input substrate 101 is temporarily removed from the evaporation apparatus.
Substrate holder 106 having a larger opening diameter
After re-fixing, the vapor deposition process had to be restarted.
Here, the substrate holder 1 when forming the first fluorescent layer 102 is formed.
The opening diameter of 06 is D 1 , the opening diameter of the substrate holder 106 for forming the second fluorescent layer 103 is D 2 , and the length of the first fluorescent layer 102 formed around the area A is 1. When D 1 , D 2 , l
, The relationship of D 2 ≧ D 1 +1 needs to be satisfied. The first phosphor layer 102 and the second phosphor layer 1 are formed through the two-step phosphor layer deposition process as described above.
FIG. 13 is an enlarged schematic view of the periphery of the input surface obtained by depositing the 03 and then depositing the annular metal thin film 104.
第1蛍光層102のうちA領域に回り込んだ部分の表面
も第2蛍光層103で連続化されるため、環状金属薄膜104
が不連続となる部分は全く存在しなかった。Since the surface of the portion of the first fluorescent layer 102 that goes around the region A is also continuous by the second fluorescent layer 103, the annular metal thin film 104
Was not present at all.
尚、第11図で説明した問題点は、光電面の下地として
導電性の中間層、例えば酸化インジウム膜や酸化インジ
ウムすず膜を使用した場合でも、全く改良することは出
来なかった。The problem described with reference to FIG. 11 could not be improved at all even when a conductive intermediate layer, for example, an indium oxide film or an indium tin oxide film was used as a base of the photocathode.
更に、第11図で説明した問題点を解消するために、環
状金属薄膜104の厚みを増大させることも試みたが、第1
1図のA領域に回り込んだ第1蛍光層102の表面で連続膜
を得るためには、数10μm以上の膜厚が必要であり、そ
の場合には、環状金属薄膜104の剥離が生じ易く、この
試みを採用することは出来なかった。Further, in order to solve the problem described in FIG. 11, an attempt was made to increase the thickness of the annular metal thin film 104.
In order to obtain a continuous film on the surface of the first fluorescent layer 102 which goes around the region A in FIG. 1, a film thickness of several tens μm or more is required. In this case, the annular metal thin film 104 is easily peeled off. , This attempt could not be adopted.
(発明が解決しようとする課題) 従来の技術では、入力蛍光層の周辺部での表面の連続
性を確保するために、入力蛍光層の成膜に時間がかかり
過ぎ、高解像度のX線イメージ管を安価に製造するため
の大きな妨げとなっていた。(Problems to be Solved by the Invention) In the conventional technique, it takes too much time to form the input fluorescent layer in order to secure the continuity of the surface in the peripheral portion of the input fluorescent layer, and a high-resolution X-ray image This was a major hindrance to making tubes cheap.
この発明は、上記問題点を解消し、高解像度にして比
較的製作容易なX線イメージ管及びその製造方法を提供
することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an X-ray image tube which has a high resolution and is relatively easy to manufacture, and a method of manufacturing the same.
[発明の構成] (課題を解決するための手段) この発明は、入力蛍光層における柱状結晶のうち、入
力面の有効径外に位置する柱状結晶の表面が機械的変形
加工により平坦化・連続化され、この平坦化・連続化さ
れた部分上に上記光電面に電気的につながる導電性薄膜
が被着されてなるX線イメージ管及びその製造方法であ
る。[Constitution of the Invention] (Means for Solving the Problems) According to the present invention, among the columnar crystals in the input fluorescent layer, the surface of the columnar crystal located outside the effective diameter of the input surface is flattened / continuous by mechanical deformation processing. An X-ray image tube in which a conductive thin film electrically connected to the photocathode is deposited on the flattened and continuous portion, and a method of manufacturing the same.
(作用) この発明によれば、有効径外の蛍光層の周辺部の光電
面と電極との電気的接続を確実に得ることが出来る。(Function) According to the present invention, electrical connection between the electrode and the photocathode at the periphery of the fluorescent layer outside the effective diameter can be reliably obtained.
(実施例) 以下、図面を参照して、この発明の実施例(7例)を
詳細に説明する。(Examples) Hereinafter, examples (seven examples) of the present invention will be described in detail with reference to the drawings.
尚、この発明は上記の課題を解決するために入力面の
入力蛍光層を改良したもので、入力蛍光層についての
み、製造方法的に述べることにする。It should be noted that the present invention is an improvement of the input fluorescent layer on the input surface in order to solve the above-mentioned problem, and only the input fluorescent layer will be described in terms of a manufacturing method.
[実施例−1] 先ず、第12図に示されるような蒸着装置にて、基板ホ
ルダー106に第1図(a)、(b)及び第2図(a)、
(b)に示す入力基板201を固定し、自転させながら低
真空度の下でCsI蛍光体を蒸発させ、入力基板201上に第
1蛍光層202を約400μmの膜厚で成膜する。Example 1 First, FIGS. 1 (a) and (b) and FIGS. 2 (a) and 2 (a)
The input substrate 201 shown in (b) is fixed, the CsI phosphor is evaporated under a low degree of vacuum while rotating, and the first phosphor layer 202 is formed on the input substrate 201 to a thickness of about 400 μm.
その後、蒸着槽109を大気圧に戻さず、高真空度の下
でCsI蛍光体を蒸発させ、第1蛍光層202上に5〜20μm
の膜厚で、第2蛍光層203を成膜させる。従来例で既に
説明したように、このままでは環状の導電性薄膜204を
成膜しても、第11図に示すように部分的に導通不良とな
り、実用化出来ない。After that, the CsI phosphor was evaporated under a high vacuum without returning the vapor deposition tank 109 to the atmospheric pressure, and 5 to 20 μm was deposited on the first phosphor layer 202.
The second fluorescent layer 203 is formed with a thickness of. As already described in the conventional example, even if the ring-shaped conductive thin film 204 is formed as it is, conduction failure partially occurs as shown in FIG. 11 and cannot be put to practical use.
そこで、第1図(b)に斜線で示した入力蛍光層の有
効径外の表面の一部分210を、ガーゼ等の布又はテフロ
ンのような比較的摩擦係数の小さい材料で出来たブロッ
クにて押圧しながら擦動させる。押圧力は2〜20g重/cm
2程度、擦動速度は2〜4cm/sec程度である。Therefore, a part 210 of the surface outside the effective diameter of the input fluorescent layer, which is hatched in FIG. 1 (b), is pressed by a cloth made of gauze or the like or a block made of a material having a relatively small coefficient of friction such as Teflon. While rubbing. The pressing force is 2 to 20 gf / cm
The rubbing speed is about 2 to 4 cm / sec.
このような研磨工程を行なった部分を、導電性薄膜20
4として0.1μmの膜厚でAlを蒸着した。その断面を拡
大、模式化したものが第2図である。The portion subjected to such a polishing step is replaced with a conductive thin film 20.
Al was deposited to a thickness of 0.1 μm as 4. FIG. 2 is an enlarged schematic view of the cross section.
上記の研磨工程により、A領域(第11図参照)に回り
込んで成膜された第1蛍光層202の表面は、柱状結晶の
先端部分のみが塑性変形され、隣り同士が連結されて平
坦化・連続化される。その結果、その上に形成される導
電性薄膜204も連続化されて、十分低い表面抵抗値が確
保出来る。By the above-mentioned polishing step, only the tip of the columnar crystal is plastically deformed on the surface of the first fluorescent layer 202 formed around the region A (see FIG. 11), and the adjacent surfaces are connected and flattened.・ Continuous. As a result, the conductive thin film 204 formed thereon is also continuous, and a sufficiently low surface resistance value can be secured.
第2図中の211は柱状結晶、212は隙間である。 In FIG. 2, 211 is a columnar crystal, and 212 is a gap.
[実施例−2] 先ず、第3図(a)、(b)に示すように、蛍光層の
周辺部分をの2箇所を部分的に突出させた部分311を形
成し、この突出部分311の端部を研磨する。それによ
り、この実施例−2の方法では、上記研磨工程で有効径
内まで不所望に研磨されてしまう恐れが少ない。Example 2 First, as shown in FIGS. 3 (a) and 3 (b), a portion 311 is formed by partially projecting two portions of a peripheral portion of the fluorescent layer. Polish the edges. Thus, in the method of the embodiment-2, there is little possibility that the polishing is performed undesirably within the effective diameter in the polishing step.
そして、蛍光層の周辺部分に突出部分311を形成する
ためには、第12図に示したような基板ホルダー106の開
口径の円周上の一部を切り欠くことによって、容易に実
現することが出来る。In order to form the protruding portion 311 in the peripheral portion of the fluorescent layer, it can be easily realized by cutting out a part of the circumference of the opening diameter of the substrate holder 106 as shown in FIG. Can be done.
尚、図中の301は入力基板、302は第1蛍光層、303は
第2蛍光層、304は導電性薄膜である。In the figure, 301 is an input substrate, 302 is a first fluorescent layer, 303 is a second fluorescent layer, and 304 is a conductive thin film.
[実施例−3] 上記実施例−1、実施例−2では、光電面の下地とな
る保護層を形成させない場合についてのべたが、第4図
に示すように研磨工程直後に保護層405を形成した後、
環状の導電性薄膜404を形成しても同様の作用効果が得
られる。Example 3 In Examples 1 and 2 described above, the case where the protective layer serving as the underlayer of the photocathode is not formed is described. However, as shown in FIG. After forming
Similar effects can be obtained even if the annular conductive thin film 404 is formed.
特に、保護層405が導電性を有する場合には、導電性
薄膜404に代わって、不透明の非金属材料を用いた環状
薄膜を使用することも可能である。In particular, when the protective layer 405 has conductivity, an annular thin film using an opaque non-metallic material can be used instead of the conductive thin film 404.
尚、図中の401は入力基板、402は第1蛍光層、403は
第2蛍光層である。In the figure, reference numeral 401 denotes an input substrate, 402 denotes a first fluorescent layer, and 403 denotes a second fluorescent layer.
[実施例−4] 上記実施例−3では、保護層405を研磨工程直後に成
膜させたが、第5図に示すように、保護層505を研磨工
程直前に成膜させても良い。Example 4 In Example 3, the protective layer 405 was formed immediately after the polishing step. However, as shown in FIG. 5, the protective layer 505 may be formed immediately before the polishing step.
研磨工程により、第1蛍光層502のみならず保護層505
も機械的変形を受ける。保護層505として酸化シリコ
ン、酸化インジウム、酸化インジウムすず等の酸化物を
材料とした場合、上記研磨により保護層505はクラック5
06が入ったり、一部剥離したりする(507が剥離部分)
が、一般に保護層505の膜厚は0.01〜0.5μmと薄いた
め、その上に0.1〜10μmの膜厚で形成される環状の導
電性薄膜504の連続性を損なうことはなく、上記実施例
と同様の作用効果が得られる。By the polishing process, not only the first fluorescent layer 502 but also the protective layer 505 is formed.
Also undergo mechanical deformation. In the case where an oxide such as silicon oxide, indium oxide, or indium tin oxide is used as the protective layer 505, the protective layer 505 is cracked by the above polishing.
06 enters or peels off partly (507 is peeling part)
However, since the thickness of the protective layer 505 is generally as thin as 0.01 to 0.5 μm, the continuity of the annular conductive thin film 504 formed thereon with a thickness of 0.1 to 10 μm is not impaired. A similar effect can be obtained.
尚、図中の501は入力基板、503は第2蛍光層である。 In the drawing, reference numeral 501 denotes an input substrate, and 503 denotes a second fluorescent layer.
[実施例−5] 光電面の下地層として保護層を使用する場合で、特に
保護層が導電性を有する場合には、第6図に示すように
環状の導電性薄膜604の成膜後に、保護層605を成膜して
も、上記実施例と同様の作用効果が得られる。[Example-5] In the case where a protective layer is used as an underlayer of the photocathode, and particularly when the protective layer has conductivity, after the formation of the annular conductive thin film 604 as shown in FIG. Even if the protective layer 605 is formed, the same operation and effect as the above embodiment can be obtained.
尚、図中の601は入力基板、602は第1蛍光層、603は
第3蛍光層である。In the figure, 601 is an input substrate, 602 is a first fluorescent layer, and 603 is a third fluorescent layer.
[実施例−6] 以上、環状薄膜の成膜前に入力蛍光層の表面を研磨す
る場合の実施例について述べたが、次に薄膜形成後、そ
の表面を研磨する例について述べる。[Embodiment-6] The embodiment in which the surface of the input fluorescent layer is polished before the formation of the annular thin film has been described above. Next, an example in which the surface is polished after the thin film is formed will be described.
先ず、第11図と同様の入力蛍光層を形成する。既に説
明したように、第11図に示す入力蛍光層は、環状の導電
性薄膜の一部が電気的に導通が不能であり、実現出来な
い。First, an input fluorescent layer similar to that shown in FIG. 11 is formed. As described above, the input fluorescent layer shown in FIG. 11 cannot be realized because part of the annular conductive thin film cannot electrically conduct.
第7図は環状金属薄膜704の電気的導通不能領域の一
部表面をAl等の比較的硬い材質からなるブロックにて押
圧しながら擦動させて、環状金属薄膜704を塑性変形さ
せることにより連続性を高めた入力面を示す。環状金属
薄膜704の電気的導通不能領域は、上記研磨工程により
電気的導通を確保出来ることが確かめられた この環状金属薄膜704の材料としては、比較的塑性変
形し易いAlやSr又はInやTl等の担体金属やその他の合金
を使用することが望ましい。FIG. 7 is a diagram showing a continuous process of plastically deforming the annular metal thin film 704 by rubbing while partially pressing the surface of the electrically non-conductive region of the annular metal thin film 704 with a block made of a relatively hard material such as Al. The input surface with enhanced characteristics is shown. It has been confirmed that the electrically non-conductive region of the annular metal thin film 704 can secure electrical conduction by the above-mentioned polishing step. As a material of the annular metal thin film 704, Al or Sr or In or Tl which is relatively easily plastically deformed is used. It is desirable to use a carrier metal such as, or another alloy.
環状金属薄膜704として、約5μm膜厚のAl膜を使用
した場合、上記研磨条件は、押圧力約50/cm2、擦動速度
約4cm/secで良好な結果を得た。When an Al film having a thickness of about 5 μm was used as the annular metal thin film 704, good results were obtained under the above polishing conditions with a pressing force of about 50 / cm 2 and a rubbing speed of about 4 cm / sec.
第7図に示した入力面をX線イメージ管に適用したと
ころ、光電面と外部電極との電気的導通を確保出来るこ
とが確かめられた。When the input surface shown in FIG. 7 was applied to an X-ray image tube, it was confirmed that electrical conduction between the photocathode and the external electrode could be ensured.
尚、図中の701は入力基板、702は第1蛍光層、703は
第2蛍光層である。In the figure, 701 is an input substrate, 702 is a first fluorescent layer, and 703 is a second fluorescent layer.
[実施例−7] 上記実施例では、環状金属薄膜又は環状非金属薄膜を
使用した場合について述べたが、これら有効径外の蛍光
層からの蛍光が光電面に達するのを遮断する機能を有す
る膜を全く使用しない実施例について述べる。[Embodiment-7] In the above embodiment, the case where the annular metal thin film or the annular nonmetal thin film is used has been described. However, it has a function of blocking the fluorescence from the fluorescent layer outside the effective diameter from reaching the photoelectric surface. An embodiment in which no membrane is used will be described.
第8図は、上記実施例−3と同様に、第1蛍光層802
の表面を研磨後、導電性の保護層805を成膜した入力蛍
光層の部分断面図である。この入力蛍光層の上に光電面
を形成する場合、外部電極と光電面の間の電気的な接続
は、導電性保護層805によって確保される。上記の場
合、更に製造方法的に詳述すると、入力面の有効径外周
辺部領域の柱状蛍光層の表面部を押圧して平坦化し、更
に有効径内全域から平坦化した領域を経て入力基板面ま
でを覆って光透過性の導電性保護層805を形成し、その
後、この導電性保護層805上に光電面を形成する。FIG. 8 shows the first fluorescent layer 802 in the same manner as in Example 3 described above.
FIG. 4 is a partial cross-sectional view of an input fluorescent layer on which a conductive protective layer 805 is formed after polishing the surface of FIG. When a photocathode is formed on the input fluorescent layer, electrical connection between the external electrode and the photocathode is ensured by the conductive protective layer 805. In the above case, the manufacturing method will be described in more detail. When the surface of the columnar fluorescent layer in the outer peripheral area of the effective diameter of the input surface is pressed and flattened, the input substrate is further planarized from the entire area of the effective diameter. A light-transmitting conductive protective layer 805 is formed so as to cover up to the surface, and then a photoelectric surface is formed on the conductive protective layer 805.
尚、図中の801は入力基板、803は第2蛍光層である。 In the figure, reference numeral 801 denotes an input substrate, and 803 denotes a second fluorescent layer.
この実施例−7の入力面を使用したX線イメージ管を
第9図に示す。即ち、入力面901は、入力面901の有効径
外の蛍光層からの発光は全く遮断されないため、有効径
外の蛍光層表面に形成された光電面からも光電子906が
出力面902へと加速集束される。そこで、出力面902近傍
に、上記入力面有効径外の蛍光層からの光電子906を出
力面902に入射させないマスク903を配置することによっ
て、出力面902に入射する光電子906を入力面の有効径内
からの光電子907のみに制限することが可能である。
尚、図中の904は陽極、905は集束電極である。FIG. 9 shows an X-ray image tube using the input surface of this embodiment-7. That is, since the light emission from the fluorescent layer outside the effective diameter of the input surface 901 is not blocked at all, the photoelectrons 906 also accelerate to the output surface 902 from the photoelectric surface formed on the fluorescent layer surface outside the effective diameter of the input surface 901. Focused. Therefore, by disposing a mask 903 that does not allow the photoelectrons 906 from the fluorescent layer outside the effective diameter of the input surface to be incident on the output surface 902 in the vicinity of the output surface 902, the photoelectrons 906 incident on the output surface 902 can be moved to the effective diameter of the input surface. It is possible to limit to only photoelectrons 907 from inside.
In the figure, 904 is an anode, and 905 is a focusing electrode.
尚、マスク903の代りに、出力面902の光出射側に、出
力面の発光の透過を遮断するような光学的マスクを配置
しても良い。Note that, instead of the mask 903, an optical mask that blocks transmission of light emitted from the output surface may be disposed on the light emission side of the output surface 902.
以上、述べたようにこの実施例−7においても、他の
実施例と同様の効果が得られる。更に、この実施例−7
では、アルミ膜のような余分の導電体を要せずに光電面
と入力基板801との電気的接続を確実に得られ、入力面
周辺部からの光電子発生による出力画像の周辺部の見づ
らさが解消される。As described above, in the seventh embodiment, the same effects as those of the other embodiments can be obtained. Furthermore, in Example-7
In this case, the electrical connection between the photocathode and the input substrate 801 can be reliably obtained without the need for an extra conductor such as an aluminum film, and the peripheral portion of the output image is difficult to see due to the generation of photoelectrons from the peripheral portion of the input surface. Is eliminated.
[発明の効果] この発明によれば、入力蛍光層における柱状結晶のう
ち、入力面の有効径外に位置する柱状結晶の表面が機械
的変形加工により平坦化・連続化され、この平坦化・連
続化された部分上に光電面に電気的につながる環状導電
性薄膜が被着されているので、金属薄膜は薄くても光電
面との電気的接続が確実に得られ、剥がれ難い。[Effects of the Invention] According to the present invention, of the columnar crystals in the input fluorescent layer, the surface of the columnar crystal located outside the effective diameter of the input surface is flattened and made continuous by mechanical deformation processing. Since the annular conductive thin film electrically connected to the photocathode is deposited on the continuous portion, even if the metal thin film is thin, electrical connection with the photocathode can be reliably obtained and the metal thin film is hardly peeled off.
尚、主として有効画面のCsI柱状結晶の先端を切削で
平坦にする公知例として、特開昭63−88732号公報に記
載されたものがあるが、これは周辺部のことは考慮に入
れられていないと認められる。又、切削しても、隙間が
残るので、この発明の効果が得られない。In addition, as a known example of flattening the tip of the CsI columnar crystal of the effective screen by cutting, there is a known example described in JP-A-63-88732, which takes into account the peripheral portion. Not admitted. Further, even if cutting is performed, a gap remains, so that the effect of the present invention cannot be obtained.
第1図(a)、(b)はこの発明の一実施例に係るX線
イメージ管の入力面を示す断面図と底面図、第2図は第
1図(a)の要部Aを拡大して示す断面図、第3図
(a)、(b)はこの発明の他の実施例に係る入力面を
示す断面図と底面図、第4図乃至第8図はこの発明の別
の他の実施例に係る入力面の要部を拡大して示す断面
図、第9図は第8図の他の実施例に係る入力面を使用し
たX線イメージ管の全体を示す断面図、第10図は従来の
X線イメージ管の入力面を示す断面図、第11図は第10図
の要部を拡大して示す断面図、第12図は蒸着装置を示す
断面図、第13図は従来の他のX線イメージ管の入力面を
示す断面図である。 201……入力基板、202……第1蛍光層、 203……第2蛍光層、204……環状金属薄膜。1 (a) and 1 (b) are a sectional view and a bottom view showing an input surface of an X-ray image tube according to an embodiment of the present invention, and FIG. 2 is an enlarged view of a main part A of FIG. 1 (a). 3 (a) and 3 (b) are a sectional view and a bottom view showing an input surface according to another embodiment of the present invention, and FIGS. 4 to 8 are other alternative views of the present invention. FIG. 9 is an enlarged cross-sectional view showing a main part of an input surface according to the embodiment of FIG. 9. FIG. 9 is a cross-sectional view showing an entire X-ray image tube using the input surface according to another embodiment of FIG. FIG. 11 is a cross-sectional view showing an input surface of a conventional X-ray image tube, FIG. 11 is a cross-sectional view showing an enlarged part of FIG. 10, FIG. 12 is a cross-sectional view showing a vapor deposition apparatus, and FIG. FIG. 11 is a cross-sectional view showing an input surface of another X-ray image tube. 201: input substrate, 202: first fluorescent layer, 203: second fluorescent layer, 204: annular metal thin film.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01J 9/233 H01J 29/18 - 29/38 H01J 31/49 - 31/50──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01J 9/233 H01J 29/18-29/38 H01J 31/49-31/50
Claims (2)
基板上に少なくとも柱状結晶からなる蛍光層及び光電面
が積層されてなる入力面が設けられ、出力側に陽極及び
出力面が設けられてなるX線イメージ管において、 上記入力面の有効径外周辺部領域の上記柱状蛍光層の表
面部が平坦化されており、且つ上記有効径内全域から上
記平坦化された領域の蛍光層上を経て上記入力基板面ま
でが光透過性の導電性保護層で覆われており、該導電性
保護層上に上記光電面が形成され、 更に上記出力側に、上記出力面周辺部への光電子入射を
制限するマスク又は該出力面周辺部からの発光光の出射
を制限するマスクが設けられてなることを特徴とするX
線イメージ管。An input substrate is provided on an input substrate disposed on an X-ray input side of a vacuum envelope. An input surface is provided by stacking at least a phosphor layer made of columnar crystals and a photocathode, and an anode and an output surface are provided on an output side. Wherein the surface of the columnar fluorescent layer in the outer peripheral area of the effective diameter of the input surface is flattened, and the flattened area from the entire inner area of the effective diameter is provided. A light-transmitting conductive protective layer covers the phosphor substrate from the fluorescent layer to the input substrate surface. The photoelectric surface is formed on the conductive protective layer. A mask for limiting the incidence of photoelectrons to the output surface or a mask for limiting emission of emitted light from the periphery of the output surface.
Line image tube.
基板上に少なくとも柱状結晶からなる蛍光層及び光電面
が積層して入力面を設け、出力側に陽極及び出力面を設
けてなるX線イメージ管の製造方法において、 上記入力面の有効径外周辺部領域の上記柱状蛍光層の表
面部を押圧して平坦化し、更に上記有効径内全域から上
記該平坦化した領域を経て上記入力基板面までを覆って
光透過性の導電性保護層を形成し、その後、該導電性保
護層上に上記光電面を形成することを特徴とするX線イ
メージ管の製造方法。2. An input substrate disposed on an X-ray input side of a vacuum envelope, at least a phosphor layer and a photocathode made of columnar crystals are laminated to provide an input surface, and an anode and an output surface are provided on an output side. In the method for manufacturing an X-ray image tube, the surface of the columnar fluorescent layer in the outer peripheral area of the effective diameter of the input surface is pressed and flattened, and the flattened area is further removed from the entire area of the effective diameter. A method for manufacturing an X-ray image tube, comprising: forming a light-transmitting conductive protective layer covering the input substrate surface through the above-described process; and forming the photocathode on the conductive protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324924A JP2809657B2 (en) | 1988-12-23 | 1988-12-23 | X-ray image tube and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63324924A JP2809657B2 (en) | 1988-12-23 | 1988-12-23 | X-ray image tube and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02170331A JPH02170331A (en) | 1990-07-02 |
| JP2809657B2 true JP2809657B2 (en) | 1998-10-15 |
Family
ID=18171131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63324924A Expired - Lifetime JP2809657B2 (en) | 1988-12-23 | 1988-12-23 | X-ray image tube and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2809657B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003019599A1 (en) | 2001-08-29 | 2003-03-06 | Kabushiki Kaisha Toshiba | Production method and production device for x-ray image detector, and x-ray image detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS585498B2 (en) * | 1976-05-11 | 1983-01-31 | 株式会社東芝 | Method for manufacturing an input screen for an X-ray fluorescence multiplier tube |
| JPS5571446U (en) * | 1978-11-09 | 1980-05-16 |
-
1988
- 1988-12-23 JP JP63324924A patent/JP2809657B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02170331A (en) | 1990-07-02 |
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