JP2809675B2 - Resin-sealed semiconductor device - Google Patents

Description

The present invention relates to a resin-sealed semiconductor device, and more particularly to a resin-sealed semiconductor device suitable for increasing the size of a semiconductor element.

(Prior art) With the increase in the integration of semiconductor elements, the dimensions of the elements tend to increase. On the other hand, the external dimensions of the semiconductor device are becoming more compatible with other products and increasing the packaging density. The fact is that it cannot be changed freely by request. By the way, this kind of semiconductor element is usually put into practical use by packaging it with cap sealing or resin sealing (mold) in consideration of reliability and the like, and particularly in the case of resin sealing, the configuration is easy. There is interest in such things as things. For example, Japanese Patent Application Laid-Open No.
No. 64942. That is, as shown in cross section in FIG. 2, the semiconductor element 1 is fixed on the tub 2 and the leads 3 are arranged around the tub 2, and the terminals 4 of the semiconductor element 1 and the leads 3 are connected by metal wiring (bonding wire). As a configuration electrically connected by (5), a configuration in which this is molded with a sealing resin 6 is known. In this structure, when the size of the semiconductor element 1 is increased, the length L of the lead 3 sealed with the sealing resin 6 is shorter than that in the case where the small semiconductor element 1 is sealed. In other words, in order to keep the external dimensions of the resin-encapsulated semiconductor device constant, the portion where the lead 3 is encapsulated with the encapsulating resin 6 is necessarily short with the enlargement of the semiconductor element 1 to be encapsulated. It becomes scary.

(Problems to be Solved by the Invention) In the case of the structure shown in FIG. 2 as described above, with the enlargement of the semiconductor element 1 to be sealed, the portion where the lead 3 is closed by the sealing resin 6 is Inevitably shorter. For this reason,
For example, when the semiconductor device is repeatedly inserted and removed a certain number of times into the IC socket, the fixing strength of the lead 3 against external force is not sufficiently obtained, so that a gap is formed between the lead 3 and the sealing resin 6 in the resin sealing portion. As a result, the lead 3 may be damaged, or moisture may enter from the outside through this gap to corrode the terminal 4 of the semiconductor element 1, thereby lowering the reliability of the semiconductor device.

[Constitution of the Invention] (Means for Solving the Problems) The present invention has been made in view of the above circumstances, and has a semiconductor element sealed with a resin and one end electrically connected to the semiconductor element via a bonding wire. The semiconductor device has a three-layer structure of Ti / Ni / Au, and one end of the lead is connected to the semiconductor device. It is characterized by being adhered and fixed on a protective film provided on the active area surface.

In other words, the bonding pad of the semiconductor element is Ti / Ni / Au
On the other hand, one end of the lead is adhered and fixed on the protective film on the active area surface of the semiconductor element to facilitate the rearrangement of the bonding pad and the like.
Part (area) of the lead to be molded with the sealing resin
The main point is to make it longer.

(Operation) Since one end of the lead is adhesively fixed on the active area protective film provided on the active area of the semiconductor element, the structure is simplified and the lead is molded into a sealing resin. The part also gets longer. In addition, since the length of the lead molded in the sealing resin is increased, the mechanical holding or fixing strength of the lead is also improved. For example, the semiconductor device may be damaged by repeatedly inserting and removing the semiconductor device into and from the IC socket a certain number of times. In addition, there is no possibility that moisture or dust will enter through the lead sealing portion.

Embodiment An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a cross-sectional view showing a configuration example of a resin-encapsulated semiconductor device according to the present invention. In FIG. 1, reference numeral 1 denotes a terminal (bonding pad) 4 of Ti / Ni / Au system and a thickness of 7000 mm on an active area surface. of
A semiconductor element, for example, an integrated circuit chip, on which a surface protective film 7 having a laminated structure composed of a PSG film, a 6000 mm thick SiN film, and a 2 μm thick photosensitive polyimide resin layer is disposed. An Au-plated Cu alloy lead is bonded and fixed at one end to the protective film 7 with an epoxy resin-based adhesive layer 8. Reference numeral 5 denotes an Al wire having a diameter of 25 μm, which electrically connects the lead 3 having one end extending on the surface protective film 7 of the integrated circuit chip 1 and fixedly bonded thereto and the terminal 4 of the integrated circuit chip 1; A sealing resin layer made of, for example, epoxy resin for sealing or molding the main body of the integrated circuit chip 1 including a part of the lead 3.

Thus, the resin-sealed semiconductor device having the above configuration can be manufactured, for example, as follows. A terminal (bonding pad) 4 of Ti / Ni / Au system and a thickness of 7000 on the active area surface
{PSG film of {circle around (1)} — SiN film of thickness 6000} —a surface protection film 7 of a laminated structure composed of a photosensitive polyimide resin layer of thickness 2 μm is provided on a predetermined surface of the surface protection film 7 of the integrated circuit chip 1 and An adhesive 8 is applied to one end of the lead (lead frame) 3 and the integrated circuit chip 1 is aligned and bonded face down, and then heated at 150 ° C. for 3 hours to cover the lead 3 with the surface protective film 7. It was adhesively fixed on the surface. Next, Ti provided on the active area surface of the integrated circuit chip 1
A terminal (bonding pad) 4 of Ni / Ni / Au system and a lead 3 bonded and fixed on the surface protective film 7 are superposed under conditions of, for example, a heating temperature of 200 ° C., an ultrasonic output of 3.9 W, and a pressure of 10 g. This is performed by a sonic heating ball bonding method. The bonding strength by this bonding was 5 g or more, and the connection was good. Thus, after combining the integrated circuit chip 1 and the lead frame 3, transfer molding is performed using an epoxy resin as a sealing resin, whereby a desired resin-encapsulated semiconductor device is obtained.

When the 50 resin-encapsulated semiconductor devices thus configured were evaluated, they all operated normally, no defects were observed during bonding and transfer molding, and the ICs of these resin-encapsulated semiconductor devices were evaluated. No abnormalities were found as a result of performing the insertion and removal test on the socket 1000 times. Further, when these 50 resin-encapsulated semiconductor devices were subjected to an operation test at 85 ° C. and 95% RH for 2000 hours, no defect was observed, and the size of the sealed integrated circuit chip 1 was reduced. It was confirmed that it was small and exhibited a highly reliable function.

In the above configuration, the surface protection film of the semiconductor element is not limited to the above-described materials, and may be formed of a single or composite system of PSG, SiN, SiO ₂ , polyimide resin, epoxy resin, silicone resin, acrylic resin, polybutadiene resin, and the like. You may. The lead (lead frame) 3 is made of Cu, Ni, SUS
A substrate obtained by subjecting the substrate to Au plating or Ag plating may be used in the same manner, and an Al wire, a Cu wire, or the like may be used as the bonding wire 5 in the same manner.

[Effect of the Invention] According to the configuration of the resin-encapsulated semiconductor device according to the present invention,
Even when the size of the sealed or molded semiconductor element is large, the semiconductor element can function as a highly reliable resin-sealed semiconductor device while maintaining a predetermined external dimension. That is, since one end of the lead or the inner lead portion is adhesively fixed on a protective film (passivation film) for protecting the active region of the semiconductor element, a bed for mounting the semiconductor element is not required and embedded in the sealing resin. Since the length of one end of the lead or the inner lead can be set to be sufficiently long, the pull-out strength is improved, the intrusion of moisture and the like from the outside is prevented, and the required function is maintained and exhibited for a long period of time. .

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration example of a resin-encapsulated semiconductor device according to the present invention, and FIG. 2 is a cross-sectional view showing a configuration example of a conventional resin-encapsulated semiconductor device. DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 3 ... Lead 4 ... Terminal (bonding pad) of semiconductor element 5 ... Bonding wire 6 ... Sealing resin 7 ... Surface protective film 8 ... Adhesive layer

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 23/50 H01L 21/60

Claims (1)

(57) [Claims] A semiconductor element sealed with a resin, and a lead having one end electrically connected to the semiconductor element via a bonding wire and the other end led out of a sealing resin region; A resin seal, wherein a bonding pad of a semiconductor element has a three-layer structure of Ti / Ni / Au, and one end of a lead is adhered and fixed on a protective film provided on an active area surface of the semiconductor element. Stop type semiconductor device.