JP2809988B2 - Aluminum foil for electrolytic capacitor electrode and etching method thereof - Google Patents
Aluminum foil for electrolytic capacitor electrode and etching method thereofInfo
- Publication number
- JP2809988B2 JP2809988B2 JP10016594A JP10016594A JP2809988B2 JP 2809988 B2 JP2809988 B2 JP 2809988B2 JP 10016594 A JP10016594 A JP 10016594A JP 10016594 A JP10016594 A JP 10016594A JP 2809988 B2 JP2809988 B2 JP 2809988B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- foil
- aluminum foil
- electrolytic capacitor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title claims description 58
- 239000011888 foil Substances 0.000 title claims description 51
- 229910052782 aluminium Inorganic materials 0.000 title claims description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 37
- 239000003990 capacitor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 15
- 239000007788 liquid Substances 0.000 claims description 11
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 238000000866 electrolytic etching Methods 0.000 claims description 7
- 238000003486 chemical etching Methods 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 10
- 238000005096 rolling process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は、電解コンデンサ電極
用アルミニウム箔及び該箔のエッチング方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aluminum foil for an electrolytic capacitor electrode and a method for etching the foil.
【0002】[0002]
【従来の技術及び解決しようとする課題】アルミニウム
電解コンデンサ用電極材として一般に用いられるAl箔
には、その実効面積を拡大して単位面積当たりの静電容
量を増大するため、通常、電気化学的あるいは化学的エ
ッチング処理が施される。2. Description of the Related Art An aluminum foil generally used as an electrode material for an aluminum electrolytic capacitor generally has an electrochemical area in order to increase its effective area and increase the capacitance per unit area. Alternatively, a chemical etching process is performed.
【0003】しかし、箔を単にエッチング処理するのみ
では十分な静電容量が得られない。このため、一般的に
は箔圧延後の最終焼鈍工程において、立方体方位を多く
有する集合組織にして箔のエッチング特性を向上させる
べく、450℃程度以上の高温加熱処理が施されている
が、昨今の電解コンデンサの高静電容量化の要求に対し
て十分な満足を得るものではなかった。[0003] However, a sufficient capacitance cannot be obtained simply by etching the foil. For this reason, in the final annealing step after foil rolling, high-temperature heat treatment of about 450 ° C. or higher is generally performed in order to improve the etching characteristics of the foil in a texture having many cubic orientations. However, it has not been possible to sufficiently satisfy the demand for higher capacitance of the electrolytic capacitor.
【0004】この発明は、かかる技術的背景に鑑みてな
されたものであって、静電容量を増大し得る電解コンデ
ンサ電極用アルミニウム箔及び該箔のエッチング方法の
提供を目的とする。The present invention has been made in view of such technical background, and an object of the present invention is to provide an aluminum foil for an electrolytic capacitor electrode capable of increasing the capacitance and a method for etching the foil.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するため
に、発明者は鋭意研究の結果、立方体方位占有率の高い
アルミニウム箔にMgの表面濃化層を設けることで、エ
ッチングピット密度を上げ、高静電容量箔が得られるこ
とを見出した。Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies and as a result, have increased the etching pit density by providing a surface-concentrated layer of Mg on an aluminum foil having a high cubic orientation occupancy. And that a high capacitance foil can be obtained.
【0006】この発明は、かかる知見に基いてなされた
ものであって、その1つは、アルミニウム純度99.9
%以上で、表面から厚さ1μmを除く芯部の立方体方位
占有率が90%以上であり、かつ箔の少なくとも片面に
おいて表面から厚さ1μmの表層部のMg濃度が200
〜2000ppmであることを特徴とする電解コンデン
サ電極用アルミニウム箔を要旨とする。The present invention has been made based on such findings, and one of them is that the aluminum purity is 99.9.
% Or more, the cubic orientation occupancy of the core portion excluding the thickness of 1 μm from the surface is 90% or more, and the Mg concentration of the surface layer portion having a thickness of 1 μm from the surface on at least one side of the foil is 200%.
An aluminum foil for an electrode of an electrolytic capacitor, characterized in that the content is 2,000 ppm.
【0007】また、他の1つは上記アルミニウム箔を、
HCl(塩酸):3〜10%、H2SO4 (硫酸):1
0〜40%を含む水溶液中で、液温:70〜90℃、電
流密度:10〜40A/dm2 の条件にて一次の電解エ
ッチングを実施した後、HCl:3〜10%あるいはさ
らにH2 C2 O4 (しゅう酸):1%以下を含む水溶液
中で、液温:70〜95℃、電流密度:0〜10A/d
m2 の条件にて、二次の電解エッチングまたは化学エッ
チングを実施することを特徴とする電解コンデンサ電極
用アルミニウム箔のエッチング方法を要旨とする。Another one is to use the above aluminum foil,
HCl (hydrochloric acid): 3 to 10%, H 2 SO 4 (sulfuric acid): 1
After performing primary electrolytic etching in an aqueous solution containing 0 to 40% under the conditions of a liquid temperature of 70 to 90 ° C. and a current density of 10 to 40 A / dm 2 , HCl: 3 to 10% or further H 2. C 2 O 4 (oxalic acid): In an aqueous solution containing 1% or less, liquid temperature: 70 to 95 ° C., current density: 0 to 10 A / d
The gist of the present invention is a method for etching an aluminum foil for an electrolytic capacitor electrode, wherein a secondary electrolytic etching or a chemical etching is performed under the condition of m 2 .
【0008】この発明に係るアルミニウム箔のアルミニ
ウム純度に99.9%以上を必要とするのは、99.9
%未満の純度では、エッチング時にエッチングピットの
成長が多くの不純物の存在によって阻害され、本発明範
囲のMg濃化層の形成によってもなお均一な深いトンネ
ル状のエッチングピットを形成できず、従って静電容量
の高いアルミニウム箔を得ることができないからであ
る。好ましくはアルミニウム純度を99.98%以上と
するのが良い。The reason why the aluminum purity of the aluminum foil according to the present invention is required to be 99.9% or more is 99.9%.
At a purity of less than 0.1%, the growth of etching pits during etching is hindered by the presence of many impurities, and uniform deep tunnel-shaped etching pits cannot be formed even by the formation of the Mg-concentrated layer in the range of the present invention. This is because an aluminum foil having a high capacitance cannot be obtained. Preferably, the aluminum purity is 99.98% or more.
【0009】表面から厚さ1μmを除く芯部の立方体方
位占有率が90%以上に規定されるのは、かかる範囲の
立方体方位占有率とMgの表面濃化層との組み合わせに
より、高静電容量が可能となるからであり、立方体方位
占有率が90%未満では、静電容量を増大することがで
きない。The cubic orientation occupancy of the core portion excluding the thickness of 1 μm from the surface is specified to be 90% or more because of the combination of the cubic orientation occupancy in such a range and the Mg surface-concentrated layer, and thus high static electricity. This is because the capacitance becomes possible, and if the cubic orientation occupancy is less than 90%, the capacitance cannot be increased.
【0010】アルミニウム箔表層部のMgは、エッチン
グ時に均一に分散したピットを得るために必要な元素で
ある。即ち、一般にエッチング初期には箔表面に存在す
る表面の凹凸や油、ロールコーティングなどの付着物、
あるいはそれらが変質したものから発生する不均一な局
部溶解ピットが発生し、エッチングピット密度の不均一
性(疎・密)を生じ、著しい場合には表面がクレーター
状に溶解する。この不均一性はエッチング終了後も残
り、静電容量低下の原因となっている。そこで、このよ
うな不具合点を防止するために、これら表面に存在する
エッチングピットの不均一要因を制御する試みが行われ
ているが、発明者は、この点について鋭意研究の結果、
Mgの表面濃化層を有するアルミニウム箔がエッチング
ピットの局部性をなくす効果を有することを知見した。
即ち、Mgの表面濃化層があると、エッチング初期に圧
延面内において圧延方向及び圧延方向と直角な方向に
(100)方向に沿った浅い溝が生じ表面溶解をおこ
す。次に、この溝の凹みの一部から圧延面に垂直にエッ
チングピットが成長する。エッチング初期にこのような
溝状の表面溶解が生じることにより、箔表面に存在する
表面の凹凸や油、ロールコーティングなどの付着物、あ
るいはそれらが変質したものが除去され、エッチング初
期から均一に分散したエッチングピットが発生するので
ある。このような効果を得るために、Mg濃度は表面か
ら厚さ1μmの表層部において200ppm以上必要で
あるが、2000ppmを越えると濃度が高すぎて著し
い表面溶解が起こり、箔の総厚が減少するため高静電容
量箔を得ることができない。そこで、Mg量の表面濃化
量範囲は、表面から厚さ1μmの表層部で200〜20
00ppmとする必要がある。特に好ましくは500〜
1000ppmとするのが良い。[0010] Mg in the surface layer of the aluminum foil is an element necessary for obtaining pits uniformly dispersed during etching. That is, in general, in the initial stage of etching, surface irregularities and oil existing on the foil surface, deposits such as roll coating,
Alternatively, non-uniform local dissolving pits are generated due to the deterioration of the pits, resulting in non-uniformity (sparse / dense) of the etching pit density. In a remarkable case, the surface dissolves in a crater shape. This non-uniformity remains even after the end of the etching, causing a decrease in capacitance. Therefore, in order to prevent such disadvantages, attempts have been made to control the non-uniformity of the etching pits present on these surfaces, but the inventors have conducted extensive research on this point,
It has been found that an aluminum foil having a surface-concentrated layer of Mg has an effect of eliminating locality of etching pits.
That is, if there is a surface-concentrated layer of Mg, shallow grooves along the (100) direction are formed in the rolling direction and a direction perpendicular to the rolling direction in the rolling plane at the initial stage of etching, causing surface melting. Next, etching pits grow perpendicularly to the rolling surface from a part of the groove recess. Due to such groove-shaped surface dissolution occurring at the beginning of etching, the surface irregularities, oil, and deposits such as roll coatings on the foil surface, or those that have been altered, are removed and uniformly dispersed from the beginning of etching. Etched pits are generated. In order to obtain such an effect, the Mg concentration is required to be 200 ppm or more in the surface layer portion having a thickness of 1 μm from the surface. However, if it exceeds 2000 ppm, the concentration is too high and remarkable surface melting occurs, and the total thickness of the foil decreases. Therefore, a high capacitance foil cannot be obtained. Therefore, the surface concentration range of the Mg amount is 200 to 20 in the surface layer portion having a thickness of 1 μm from the surface.
Must be 00 ppm. Particularly preferably 500 to
It is good to be 1000 ppm.
【0011】また、上記のMg濃化層は、箔の少なくと
も片面に存在すれば良い。もちろん両面に存在していて
も良い。また、表面から厚さ1μmの表層部を除く芯部
のMg濃度は1ppm未満とするのが良い。1ppmを
越えると、箔表層部にMg濃化層を形成した効果が減殺
され、箔内部でエッチングピットが連通して十分な拡面
率が得られない恐れがある。The Mg-concentrated layer may be present on at least one side of the foil. Of course, it may exist on both sides. Further, the Mg concentration in the core portion excluding the surface layer having a thickness of 1 μm from the surface is preferably less than 1 ppm. If it exceeds 1 ppm, the effect of forming the Mg-concentrated layer on the surface layer of the foil is diminished, and etching pits may be communicated inside the foil, so that a sufficient area coverage may not be obtained.
【0012】上記の如く表層部にMgを高濃度に含有す
るアルミニウム箔の製造は、特に規定されることはない
が、例えば、アルミニウム地金を好ましくはMg量2p
pm未満(さらに好ましくは1ppm未満)のものとし
て溶解、鋳造する一方、別のアルミニウム地金の溶解時
にMg量200〜2000ppmを添加して鋳造し、こ
れら両アルミニウム地金を圧延により所定厚みとなるよ
うにクラッドすれば良い。また、Mgを含まないアルミ
ニウム箔の表面に、別途Mgをイオンスパッタリング等
の方法で適宜厚みの皮膜として付与したのち、熱処理を
行ってMgを表層部に拡散せしめるものとしても良い。As described above, the production of an aluminum foil containing Mg at a high concentration in the surface layer is not particularly limited.
While it is melted and cast as less than 1 pm (more preferably less than 1 ppm), it is cast by adding 200-2000 ppm of Mg when another aluminum ingot is melted, and both aluminum ingots are rolled to a predetermined thickness by rolling. What is necessary is just to clad it. Alternatively, Mg may be separately applied to the surface of the aluminum foil containing no Mg as a film having an appropriate thickness by a method such as ion sputtering, and then heat treatment may be performed to diffuse Mg into the surface layer portion.
【0013】上記アルミニウム箔は、これをエッチング
処理して電解コンデンサ電極材とする。エッチングの条
件は特に限定されることはないが、好ましくは本発明に
従うエッチング方法を適用するのが良い。The aluminum foil is subjected to an etching treatment to form an electrode material for an electrolytic capacitor. The etching conditions are not particularly limited, but it is preferable to apply the etching method according to the present invention.
【0014】このエッチング方法は2段の処理からな
り、一次エッチングはHCl+H2 SO4 系の電解液を
用いて実施するものであるが、発明者は、一次エッチン
グ時のH2 SO4 濃度を適当な範囲に設定することで表
面溶解量を適度に抑制し、エッチングピット分布の均一
分散性のみを高められることを見出した。即ち、HCl
+H2 SO4 系の液組成において、H2 SO4 濃度が1
0%未満ではMg濃化層による表面溶解量が大きいため
十分な高静電容量箔が得られず、またH2 SO4濃度が
40%を越えるとエッチングピット密度が高くなり過ぎ
部分的なエッチングピットの結合が生じて静電容量は低
下する。従って、一次エッチング処理において、H2 S
O4 濃度は10〜40%とする。特に望ましくは20〜
35%である。この時、他の一次エッチング条件は化成
処理後に十分な表面積が得られるだけのエッチングピッ
ト密度、径、ピット長さを確保するためにHCl濃度:
3〜10%、液温:70〜90℃、直流電流密度:10
〜40A/dm2 の範囲とする。This etching method is a two-step process, and the primary etching is performed using an HCl + H 2 SO 4 -based electrolytic solution. However, the inventor has set an appropriate H 2 SO 4 concentration at the time of the primary etching. It has been found that by setting the content in such a range, the amount of surface dissolution can be appropriately suppressed, and only the uniform dispersibility of the etching pit distribution can be enhanced. That is, HCl
In the + H 2 SO 4 liquid composition, the H 2 SO 4 concentration is 1
If the concentration is less than 0%, the surface dissolution amount by the Mg-concentrated layer is large, so that a sufficiently high capacitance foil cannot be obtained. If the H 2 SO 4 concentration exceeds 40%, the etching pit density becomes too high and the partial etching is performed. Pit coupling occurs and the capacitance decreases. Therefore, in the primary etching process, H 2 S
The O 4 concentration is 10 to 40%. Particularly preferably 20 to
35%. At this time, the other primary etching conditions include an HCl concentration for ensuring an etching pit density, a diameter, and a pit length sufficient to obtain a sufficient surface area after the chemical conversion treatment:
3 to 10%, liquid temperature: 70 to 90 ° C, DC current density: 10
4040 A / dm 2 .
【0015】一次エッチングに引き続いて、エッチング
ピット径を拡げる目的で、二次エッチングを行う。処理
液は、HCl濃度:3〜10%の塩酸水溶液を基本とす
るが、濃度1%以下のH2 C2 O4 を混合しても良い。
また、液温は70〜95℃とし、電流の通電を伴わない
化学エッチングでもよいし、直流電流密度10A/dm
2 以下の電解エッチングでも良い。二次電解処理におけ
る上記処理条件を逸脱する場合は、いずれもエッチング
ピット径の拡大効果に不十分となる。Subsequent to the primary etching, a secondary etching is performed for the purpose of increasing the etching pit diameter. The treatment liquid is basically an aqueous solution of hydrochloric acid having a HCl concentration of 3 to 10%, but may be mixed with H 2 C 2 O 4 having a concentration of 1% or less.
The solution temperature may be 70 to 95 ° C., chemical etching without current application may be performed, or DC current density of 10 A / dm.
Electrolytic etching of 2 or less may be used. Any deviation from the above treatment conditions in the secondary electrolysis treatment is insufficient for the effect of increasing the etching pit diameter.
【0016】このような一次エッチング及び二次エッチ
ングにより、従来法よりも静電容量の高いAl箔を得る
ことが可能となる。By such primary etching and secondary etching, it is possible to obtain an Al foil having a higher capacitance than the conventional method.
【0017】[0017]
【作用】箔表層部のMg濃化層がエッチングの際に箔表
面のエッチングピットの局部性をなくし均一生成を促
す。このようなMg濃化層の作用は、箔芯部のMg濃度
が1ppm未満のとき、より効果的に発揮される。The Mg-concentrated layer on the surface layer of the foil eliminates the locality of etching pits on the foil surface during etching and promotes uniform formation. Such an action of the Mg-concentrated layer is more effectively exhibited when the Mg concentration in the foil core is less than 1 ppm.
【0018】また、一次エッチング処理によりエッチン
グピットが適度に分散され、二次エッチングにより孔径
が拡大し、拡面率が増大する。Further, the etching pits are appropriately dispersed by the primary etching process, and the hole diameter is increased by the secondary etching, so that the area coverage is increased.
【0019】[0019]
(実施例1)表1に示す各種組成のアルミニウム鋳塊を
面削後に、熱間圧延で表2に示す構成となるようにクラ
ッド圧延したのち、冷間圧延(中間焼鈍を含む)した。
そして、不活性ガス雰囲気中で500℃×10時間の最
終焼鈍を実施した。なお、表2の試料No5については
クラッドさせることなく単独の箔とした。(Example 1) Aluminum ingots having various compositions shown in Table 1 were subjected to face milling, then clad-rolled by hot rolling so as to obtain the structure shown in Table 2, and then cold-rolled (including intermediate annealing).
Then, final annealing at 500 ° C. × 10 hours was performed in an inert gas atmosphere. The sample No. 5 in Table 2 was used as a single foil without cladding.
【0020】そして、得られた各アルミニウム箔の芯部
の立方体方位の占有率を調べた。その結果を表2に示
す。Then, the occupancy of the cubic orientation of the core of each of the obtained aluminum foils was examined. Table 2 shows the results.
【0021】次に、以下の条件でエッチングを実施した
のち、得られたアルミニウム箔を5%ホウ酸液中で25
0Vに化成したときの静電容量を測定した。その結果
を、試料No5の静電容量を100%としたときの相対
比較にて表2に示す。Next, after etching was performed under the following conditions, the obtained aluminum foil was placed in a 5% boric acid solution for 25 minutes.
The capacitance when converted to 0 V was measured. The results are shown in Table 2 as a relative comparison when the capacitance of Sample No. 5 is set to 100%.
【0022】[エッチング条件] 前処理:なし 一次エッチング 液組成:5%HCl+30%H2 SO
4 、液温:80℃、電流密度:直流20A/dm2 、時
間:80秒 二次エッチング 液組成:5%HCl+0.1%H2 C
2 O4 、液温:80℃、電流密度:直流5A/dm2 、
時間:10分[Etching conditions] Pre-treatment: none Primary etching solution composition: 5% HCl + 30% H 2 SO
4. Liquid temperature: 80 ° C., current density: DC 20 A / dm 2 , time: 80 seconds Secondary etching solution composition: 5% HCl + 0.1% H 2 C
2 O 4 , liquid temperature: 80 ° C., current density: DC 5 A / dm 2 ,
Time: 10 minutes
【表1】 [Table 1]
【表2】 上記表2の結果からわかるように、本発明範囲のMg表
面濃化層を有する本発明実施品は、本発明範囲を逸脱す
る比較品に較べて静電容量を増大し得ることを確認し得
た。[Table 2] As can be seen from the results in Table 2, it can be confirmed that the product of the present invention having the Mg surface-concentrated layer in the range of the present invention can increase the capacitance as compared with the comparative product deviating from the range of the present invention. Was.
【0023】(実施例2)前記表2の各試料に対して、
一次エッチング及び二次エッチングの条件を表3のよう
に設定してエッチングを実施したのち、得られたアルミ
ニウム箔を5%ホウ酸液中で250Vに化成したときの
静電容量を測定した。その結果を、表2の試料No5の
静電容量を100%としたときの相対比較にて示す。Example 2 For each sample in Table 2 above,
After performing the etching by setting the conditions of the primary etching and the secondary etching as shown in Table 3, the capacitance when the obtained aluminum foil was converted to 250 V in a 5% boric acid solution was measured. The results are shown by relative comparison when the capacitance of sample No. 5 in Table 2 is set to 100%.
【0024】[0024]
【表3】 上記表3の結果からわかるように、本発明に係るエッチ
ング方法の条件を満足する実施品は、条件を逸脱する比
較品に較べて静電容量を増大し得ることを確認し得た。[Table 3] As can be seen from the results in Table 3 above, it was confirmed that a product that satisfies the conditions of the etching method according to the present invention can increase the capacitance as compared with a comparative product that deviates from the conditions.
【0025】[0025]
【発明の効果】この発明に係る電解コンデンサ電極用ア
ルミニウム箔は、アルミニウム純度99.9%以上で、
表面から厚さ1μmを除く芯部の立方体方位占有率が9
0%以上であり、かつ箔の少なくとも片面において表面
から厚さ1μmの表層部のMg濃度が200〜2000
ppmであることを特徴とするものであるから、エッチ
ング性に優れ、エッチング処理により極めて大きな拡面
率を得ることができる。従って、大きな静電容量を有し
電気的特性に優れた電解コンデンサ電極用アルミニウム
箔となしうる。The aluminum foil for an electrolytic capacitor electrode according to the present invention has an aluminum purity of 99.9% or more.
The cubic orientation occupancy of the core except the thickness of 1 μm from the surface is 9
0% or more, and at least one surface of the foil has a Mg concentration of 200 to 2,000 in a surface layer part 1 μm thick from the surface.
Since it is characterized by ppm, it is excellent in etching property, and an extremely large surface area can be obtained by the etching treatment. Therefore, it is possible to provide an aluminum foil for an electrolytic capacitor electrode having a large capacitance and excellent electrical characteristics.
【0026】また、この発明に係るエッチング方法によ
れば、上記のアルミニウム箔に、HCl:3〜10%、
H2 SO4 :10〜40%を含む水溶液中で、液温:7
0〜90℃、電流密度:10〜40A/dm2 の条件に
て一次の電解エッチングを実施した後、HCl:3〜1
0%あるいはさらにH2 C2 O4 :1%以下を含む水溶
液中で、液温:70〜95℃、電流密度:0〜10A/
dm2 の条件にて、二次の電解エッチングまたは化学エ
ッチングを実施するから、エッチングピットを適度に分
散させることができるとともに、孔径を拡大でき、益々
拡面率が大きく静電容量の大きい電解コンデンサ電極箔
を提供できる。[0026] According to the etching method of the present invention, the aluminum foil is added with HCl: 3 to 10%,
H 2 SO 4 : In an aqueous solution containing 10 to 40%, liquid temperature: 7
After performing primary electrolytic etching under the conditions of 0 to 90 ° C. and current density of 10 to 40 A / dm 2 , HCl: 3 to 1
0% or more H 2 C 2 O 4: with an aqueous solution containing 1% or less, the liquid temperature: 70 to 95 ° C., a current density: 0~10A /
Since the secondary electrolytic etching or chemical etching is performed under the condition of dm 2 , the etching pits can be appropriately dispersed and the hole diameter can be enlarged, and the surface area is increased and the electrolytic capacitor has a large capacitance. An electrode foil can be provided.
【0027】また、上記において、芯部のMg濃度が2
ppm未満である場合には、Mgの表面濃化層の効果が
より有効に発揮され、さらに静電容量に優れたアルミニ
ウム箔となし得る。In the above, the Mg concentration in the core is 2
When the amount is less than ppm, the effect of the Mg surface-concentrated layer is more effectively exerted, and an aluminum foil having further excellent capacitance can be obtained.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 礒山 永三 堺市海山町6丁224番地 昭和アルミニ ウム株式会社内 (72)発明者 遠藤 茂 堺市海山町6丁224番地 昭和アルミニ ウム株式会社内 (56)参考文献 特開 平4−62821(JP,A) 特開 平5−21288(JP,A) 特開 平6−41665(JP,A) 特開 平7−211593(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01G 9/055 H01G 9/04 304──────────────────────────────────────────────────続 き Continuing on the front page (72) Eizo Isoyama 6,224, Kaiyamacho, Sakai City Showa Aluminum Co., Ltd. (72) Inventor Shigeru Endo, 6224, Kaiyamacho, Sakai City Showa Aluminum Co., Ltd. (56) References JP-A-4-62821 (JP, A) JP-A-5-21288 (JP, A) JP-A-6-41665 (JP, A) JP-A-7-211593 (JP, A) (58) Field surveyed (Int.Cl. 6 , DB name) H01G 9/055 H01G 9/04 304
Claims (4)
面から厚さ1μmを除く芯部の立方体方位占有率が90
%以上であり、かつ箔の少なくとも片面において表面か
ら厚さ1μmの表層部のMg濃度が200〜2000p
pmであることを特徴とする電解コンデンサ電極用アル
ミニウム箔。1. A cubic orientation occupancy ratio of a core portion excluding a thickness of 1 μm from the surface having an aluminum purity of 99.9% or more is 90%.
% Or more, and at least one surface of the foil has a Mg concentration of 200 to 2,000 p.
pm, which is an aluminum foil for an electrode of an electrolytic capacitor.
求項1に記載の電解コンデンサ電極用アルミニウム箔。2. The aluminum foil for an electrode of an electrolytic capacitor according to claim 1, wherein the core has a Mg concentration of less than 2 ppm.
面から厚さ1μmを除く芯部の立方体方位占有率が90
%以上であり、かつ箔の少なくとも片面において表面か
ら厚さ1μmの表層部のMg濃度が200〜2000p
pmである電解コンデンサ電極用アルミニウム箔を、H
Cl:3〜10%、H2 SO4 :10〜40%を含む水
溶液中で、液温:70〜90℃、電流密度:10〜40
A/dm2 の条件にて一次の電解エッチングを実施した
後、HCl:3〜10%あるいはさらにH2 C2 O4 :
1%以下を含む水溶液中で、液温:70〜95℃、電流
密度:0〜10A/dm2 の条件にて、二次の電解エッ
チングまたは化学エッチングを実施することを特徴とす
る電解コンデンサ電極用アルミニウム箔のエッチング方
法。3. The cubic orientation occupancy of a core portion having an aluminum purity of 99.9% or more and excluding a thickness of 1 μm from the surface is 90%.
% Or more, and at least one surface of the foil has a Mg concentration of 200 to 2,000 p.
pm of aluminum foil for electrolytic capacitor electrodes
Cl: 3~10%, H 2 SO 4: in an aqueous solution containing 10-40%, a liquid temperature: 70 to 90 ° C., a current density: 10 to 40
After performing primary electrolytic etching under the condition of A / dm 2 , HCl: 3 to 10% or further H 2 C 2 O 4 :
Electrolytic capacitor electrode characterized in that secondary electrolytic etching or chemical etching is performed in an aqueous solution containing 1% or less at a liquid temperature of 70 to 95 ° C. and a current density of 0 to 10 A / dm 2. Method for etching aluminum foil.
求項3に記載の電解コンデンサ電極用アルミニウム箔の
エッチング方法。4. The method for etching an aluminum foil for an electrolytic capacitor electrode according to claim 3, wherein the core has a Mg concentration of less than 2 ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10016594A JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-355011 | 1993-12-29 | ||
| JP35501193 | 1993-12-29 | ||
| JP10016594A JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07235458A JPH07235458A (en) | 1995-09-05 |
| JP2809988B2 true JP2809988B2 (en) | 1998-10-15 |
Family
ID=26441249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10016594A Expired - Lifetime JP2809988B2 (en) | 1993-12-29 | 1994-05-13 | Aluminum foil for electrolytic capacitor electrode and etching method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2809988B2 (en) |
-
1994
- 1994-05-13 JP JP10016594A patent/JP2809988B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07235458A (en) | 1995-09-05 |
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