JP2814854B2 - Vertical vacuum deposition equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical reduced pressure vapor phase growth apparatus, and more particularly to a vertical reduced pressure vapor phase growth apparatus having a boat other than a boat mounted on a lid member for opening and closing an opening of a reaction furnace.

[0002]

2. Description of the Related Art Conventionally, this type of vertical reduced pressure vapor phase growth apparatus prepares a second boat separately from the first boat housed in a reactor, and prepares a semiconductor substrate to be processed in advance. This is an apparatus in which the next second boat is inserted immediately after processing of the semiconductor substrate of the first boat stored therein and stored in the reaction furnace, thereby shortening the preparation time.

FIG. 2 is a cross-sectional view of a vertical type reduced pressure vapor phase growth apparatus showing one example of the prior art. As shown in FIG. 2, the vertical type reduced pressure vapor phase growth apparatus includes a reactor 3 having an exhaust port 6 for depressurizing the inside and a gas supply port 5 for introducing a reaction gas and having an opening downward. A heater 4 disposed around the reaction furnace 3; a boat 2 for storing a plurality of semiconductor substrates in a line; and a lid member for mounting the boat 2 to enter and exit the reaction furnace 3 to open and close the opening. A seal cap 8,
An elevating mechanism 9 for elevating and lowering the seal cap 8 and a boat 2a mounted on a stage 7 arranged at a predetermined distance from the seal cap 8 and accommodating a plurality of semiconductor substrates arranged side by side are provided.

[0004] Next, the operation of the vertical type reduced pressure vapor phase growth apparatus will be described. First, the boat 2 containing a plurality of semiconductor substrates is transferred from the stage 7 to the seal cap 8 by a handling arm (not shown). Next, the seal cap 8 is raised by the elevating mechanism 9, the boat 2 is put into the reaction furnace 3, and the opening of the reaction furnace 3 is closed. Next, the reactor 3 is evacuated from the exhaust port 6 to reduce the pressure. Then, a raw material gas is introduced from the gas supply port 5 to form a thin film on the semiconductor substrate of the board 2. On the other hand, on the empty stage 7, a boat 2a in which semiconductor substrates are stored by a change machine in advance is mounted by a handling arm. Then, the boat 2 on which the processing has been completed is pulled out of the reaction furnace by descending the seal cap 8, and is moved out of the apparatus from the seal cap 8 by the handling arm. Again, the boat 2a placed on the stage 7 is transferred to the seal cap 8 by the handling arm, and inserted into the reaction furnace to form a thin film on the semiconductor substrate.

As described above, the boats are sequentially moved by arrows A, B,
C, and efficiently operated a plurality of boats to increase the operation rate of the equipment and increase productivity.

[0006]

However, in the above-mentioned conventional vertical reduced pressure vapor phase growth apparatus, when the boat is pulled out of the reactor, the semiconductor substrate of the boat on the stage is heated by the residual heat of the boat, so that the semiconductor substrate of the boat is in the air. Is oxidized by the oxygen, and a desired film cannot be formed.

An object of the present invention is to provide a vertical reduced-pressure vapor deposition apparatus capable of forming a desired film without oxidizing a semiconductor substrate stored in a boat in advance.

[0008]

SUMMARY OF THE INVENTION A first vertical type vacuum deposition apparatus of the present invention has an exhaust port for depressurizing the inside and a gas supply port for introducing a reaction gas, and has an opening downward. A reactor, a heater disposed around the reactor, a first boat for storing a plurality of semiconductor substrates side by side, and a first boat placed on the first boat to enter and exit the reactor and open the opening. A lid member that opens and closes, an elevating mechanism that raises and lowers the lid member, a second boat that is placed on a stage disposed near the lid member, and that stores a plurality of semiconductor substrates in a line, A shielding member that wraps the boat, and when the first board is pulled out of the reaction furnace, the second boat is covered with the shielding member, and the semiconductor substrate of the first boat is cooled to a predetermined temperature. Later in front of the second boat It is characterized by exposing from the shielding member. In addition, the second vertical type reduced pressure vapor phase growth apparatus is provided with an inert gas ejection port in the shielding member in addition to the first vertical type reduced pressure growth apparatus, and covers the second boat with the shielding member. In addition, the above inert gas is sprayed.

[0009]

Next, the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view of a vertical reduced pressure vapor deposition apparatus showing one embodiment of the present invention. As shown in FIG. 1, the vertical reduced-pressure vapor deposition apparatus includes a shield tube 1 for covering a boat 2a on which a semiconductor substrate is stored and placed on a stage 7, and a rope and a reel 11 for moving the shield tube 1 up and down. And a counter weight 12 are provided. Otherwise, it is the same as the conventional example.

As described in the conventional example, when the boat 2 is pulled out of the reaction furnace 3, the operation of the vertical type reduced-pressure vapor phase growth apparatus is performed by covering the boat 2a with the shielding cylinder 1, It is to shut off the radiated heat. In this case, the semiconductor substrate of the boat 2a is not heated, and is not oxidized by oxygen in the air. If necessary,
It is more effective to provide a jet port 10 for blowing nitrogen downward in the shielding cylinder 1 and to actively expel air that is going to enter the shielding cylinder 1.

In this embodiment, a cylindrical shielding member is used for shielding radiant heat. However, when the space between the two boards is wide, a member such as a shielding plate may be used in consideration of the surroundings of the apparatus. . The mechanism for raising and lowering the shielding member is described in Rule 11
Instead of hoisting and unwinding the rope, a lifting / suspending mechanism using a pneumatic cylinder may be simply used. In short, the sequential operation of the boats indicated by arrows A, B and C and the operation indicated by arrow D of the shielding cylinder 1 are automatically and smoothly performed. Any mechanism that can be easily performed may be used.

[0013]

As described above, according to the present invention, a semiconductor substrate of a boat arranged near the drawn boat is provided by providing a blocking member for blocking heat radiated from the boat drawn from the reactor. Is not heated and does not oxidize with oxygen in the air, so that a normal film is formed.

[Brief description of the drawings]

FIG. 1 is a sectional view of a vertical reduced-pressure vapor deposition apparatus showing one embodiment of the present invention.

FIG. 2 is a cross-sectional view of a vertical type reduced-pressure vapor deposition apparatus showing an example of the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Shielding cylinder 2, 2a Boat 3 Reactor 4 Heater 5 Gas supply port 6 Exhaust port 7 Stage 8 Seal cap 9 Elevating mechanism 10 Spout port 11 Reel 12 Counter weight

Claims (2)

(57) [Claims] 1. A reactor having an exhaust port for reducing the pressure inside thereof, a gas supply port for introducing a reaction gas, and an opening facing downward, a heater disposed around the reactor, and a semiconductor substrate. A first boat for arranging a plurality of sheets in a row, a lid member for mounting the first boat, entering and leaving the reaction furnace to open and close the opening, an elevating mechanism for elevating the lid member, and a lid member A second boat mounted on a stage arranged near the first board and accommodating a plurality of semiconductor substrates in a row, and a shielding member surrounding the second boat, wherein the first board is provided in the reaction furnace. The second boat is covered with the shielding member when the second boat is drawn out, and the semiconductor substrate of the first boat is cooled to a predetermined temperature, and then the second boat is exposed from the shielding member. Mold decompression gas phase formation Long equipment. 2. The vertical type according to claim 1, wherein said shielding member is provided with a spout of an inert gas, and said inert gas is sprayed when said shielding member is put on said second boat. Low pressure vapor phase epitaxy.