JP2818513B2 - Semiconductor measuring jig - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor measuring jig,
More particularly, the present invention relates to a jig for measuring microwave characteristics of a GaAs field effect transistor (hereinafter referred to as a GaAs MESFET) that operates in an ultra-high frequency band.

[0002]

2. Description of the Related Art Conventionally, as shown in a perspective view of FIG. 4, a strip line type jig for measuring a microwave characteristic of a GaAs MESFET has a dielectric substrate 10 attached to a jig body 8 and a Forming a strip line 1,
A connector 9 is connected to the input / output unit. A GaAs MES is used for the strip line jig having such a configuration.
The FET 2 is mounted and fixed with screws 6 via the holding plate 4. At this time, as shown in the front view (a), the top view (b), and the side view (c) of FIG. The projection 5 is formed integrally as a material and comes into contact with the lead 3, and the projection 5 is generally in surface contact with the lead 3 as shown in a partially enlarged sectional view of FIG.

[0003]

In the measuring jig having the above-mentioned structure, in the measurement at 10 GHz or more, the dielectric loss due to the lexrite, which is the material of the holding plate, becomes large, and the crimped portion causes discontinuity, and the impedance is reduced. It is not preferable because it adversely affects the characteristics. In order to solve this problem, an upper free space release type in which the holding plate of the above structure is removed can be considered.
The contact position between the gate and drain leads of the aAsMESFET and the microstrip line becomes unstable,
In addition to the occurrence of the parasitic capacitance C, the reproducibility of the impedance is poor, and the worst state, that is, the open state due to the inability to make contact makes it impossible to supply the bias.

[0004]

According to the present invention, a pressing plate for contacting a microstrip line with the gate and drain leads of a GaAs MESFET is provided with a projection as thin as possible while maintaining strength, and the lead is formed at this point. And a structure for pressing and supporting the root and the tip of the

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of one embodiment of the present invention, and FIG. 2 is a front view (a), a top view (b), and a side view (c) of a holding plate used in this embodiment. In FIG.
Processing is performed according to design values so that sMESFET2 can be accommodated. In particular, the projection 5 is designed so that the root and the tip can be supported by a thin wall (about 0.7 mm) in accordance with the length of the lead 3. Further, a metal spacer 7 is disposed on the holding plate 4 as a measure for preventing wear with the screw 6.

FIG. 1 is a perspective view when the holding plate 4 having this structure is used for a strip line jig body 8. GaAs
The method of attaching sMESFET2 is the same as described in the prior art. As shown in the partially enlarged cross-sectional view of FIG. 3, the convex portion 5 of the holding plate 4 contacts the lead 3 at two thin portions, and presses the lead 3 against the microstrip line 1.

[0007]

As described above, according to the present invention, the convex portion of the holding plate for making the microstrip line adhere to the gate and drain leads of the GaAs MESFET is formed in a thin shape, and the root and tip of the lead are formed at this point. By holding down and supporting, it becomes possible to provide a GaAs MESFET strip line type measuring jig which has a reduced characteristic loss of about 0.3 dB and a stable impedance in the measurement at 10 GHz or more.

[Brief description of the drawings]

FIG. 1 is a perspective view of one embodiment of the present invention.

FIGS. 2A and 2B are views showing a holding plate used in an embodiment, wherein FIG. 2A is a front view, FIG. 2B is a top view, and FIG. 2C is a side view.

FIG. 3 is a partially enlarged cross-sectional view illustrating a lead holding state in one embodiment.

FIG. 4 is a perspective view of a conventional measuring jig.

5A and 5B are diagrams showing a holding plate used for a conventional jig, wherein FIG. 5A is a front view, FIG. 5B is a top view, and FIG. 5C is a side view.

FIG. 6 is a partially enlarged cross-sectional view showing a state of holding a lead of a conventional jig.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Microstrip line 2 GaAs MESFET 3 Lead 4 Holding plate 5 Convex part 6 Screw 7 Metal spacer 8 Jig body 9 Connector

Claims (1)

(57) [Claims] 1. A strip line system for measuring microwave characteristics, comprising: a microstrip line for bringing the gate and drain leads of a GaAs field-effect transistor into contact with each other; and a holding plate for placing and pressing the leads on the microstrip line. A semiconductor measuring jig characterized in that a thin-walled convex portion that presses two portions of a root and a tip of a lead of a gate and a drain of the field effect transistor is provided on a holding plate.