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JP2819037B2 - Function-separated selenium photoconductor for electrophotography - Google Patents
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JP2819037B2 - Function-separated selenium photoconductor for electrophotography - Google Patents

Function-separated selenium photoconductor for electrophotography

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Publication number
JP2819037B2
JP2819037B2 JP31287389A JP31287389A JP2819037B2 JP 2819037 B2 JP2819037 B2 JP 2819037B2 JP 31287389 A JP31287389 A JP 31287389A JP 31287389 A JP31287389 A JP 31287389A JP 2819037 B2 JP2819037 B2 JP 2819037B2
Authority
JP
Japan
Prior art keywords
layer
selenium
function
tellurium
electrophotography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP31287389A
Other languages
Japanese (ja)
Other versions
JPH03172855A (en
Inventor
正文 小沢
正幸 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP31287389A priority Critical patent/JP2819037B2/en
Publication of JPH03172855A publication Critical patent/JPH03172855A/en
Application granted granted Critical
Publication of JP2819037B2 publication Critical patent/JP2819037B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は電子写真用機能分離型セレン感光体、特に反
転現像方式電子写真装置用機能分離型セレン感光体に関
するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a function-separated selenium photosensitive member for electrophotography, and more particularly to a function-separated selenium photosensitive member for a reversal developing type electrophotographic apparatus.

(従来技術とその解決すべき問題点) 近年その普及が著しいレーザビームプリンタにおいて
は、第1図に示す如き導電性基板(1)、電荷移動層
(2)、電荷発生層(3)、必要に応じて設けられる表
面保護層(4)などからなる、所謂機能分離型セレン感
光体が多く用いられている。
(Prior Art and Problems to be Solved) In a laser beam printer, which has been widely spread in recent years, a conductive substrate (1), a charge transfer layer (2), and a charge generation layer (3) as shown in FIG. A so-called function-separated selenium photoconductor comprising a surface protective layer (4) provided depending on the type of the photoconductor is often used.

また現像方式として反転現像方式、即ち従来の電子写
真方式による複写機に広く用いられている、露光部を白
地部として画像を形成する正規現像方式とは逆に、露光
部にトナーを付着させ未露光部を白地部として画像を形
成する、所謂反転現像方式が広く用いられる。
Also, contrary to the reversal development method, that is, the normal development method that forms an image with an exposed portion as a white background, toner is adhered to the exposed portion, A so-called reversal development method in which an image is formed with an exposed portion as a white background portion is widely used.

ところで上記のようなレーザビームプリンタにおいて
は、画像品質向上のための高解像化が強く要求されてい
るが、その実現のためには使用される機能分離型セレン
感光体として、帯電による表面電荷の保持力を示す暗減
衰特性と、露光部における電位を示す残留電位特性にお
いてすぐれることが要求される。
By the way, in a laser beam printer as described above, high resolution is strongly demanded for improving image quality. It is required that the dark decay characteristic indicating the coercive force and the residual potential characteristic indicating the potential at the exposed portion be excellent.

すなわち暗減衰が悪いと表面電荷が保持されにくくな
るため、白色部となる未露光部(高電位部)にトナーが
付着して“地かぶり”や黒点を生ずるばかりでなく、露
光部以外の表面電位の低下を招いて解像度を低下する。
In other words, if the dark decay is poor, the surface charge is difficult to be retained, so that not only the toner adheres to the unexposed portion (high potential portion), which is a white portion, causing "ground fog" or black spots, but also the surface other than the exposed portion. This lowers the potential by lowering the potential.

また残留電位が高くなると露光部におけるトナーの付
着量が減少して濃度の低下を招くことになり、これによ
っても解像度の低下を招くためである。
Also, when the residual potential is increased, the amount of toner adhered to the exposed portion is reduced, which causes a decrease in density, which also causes a decrease in resolution.

ところで白地部の“かぶり”や黒点の発生の原因とな
る暗減衰を良くするための手段として、第1図の導電性
基板(1)からセレン層(2)への負電荷の注入量の抑
制が有効であり、また残留電位を低くするためには感光
体内の正電荷トラップの減少が有効であることが知られ
ている。
By the way, as a means for improving the dark decay which causes the generation of "fog" and black spots on a white background, the amount of negative charge injected from the conductive substrate (1) into the selenium layer (2) in FIG. 1 is suppressed. Is known to be effective, and in order to reduce the residual potential, it is effective to reduce positive charge traps in the photoconductor.

また暗減衰特性をよくするに当たっては、負電荷の注
入量の抑制と同時に、導電性基板(1)の表面の性状な
どにもとづく表面電位の均一化の達成が重要である。
In order to improve the dark decay characteristics, it is important to not only suppress the amount of injected negative charges, but also to achieve a uniform surface potential based on the surface properties of the conductive substrate (1).

そこで第2図のように導電性基板(1)と電荷移動層
(2)との界面に、導電性基板(1)のアンダーコート
層としてハロゲンを含むセレン層(5)を設けて、暗減
衰特性を向上させたセレン感光体が提案された。
Therefore, as shown in FIG. 2, a selenium layer (5) containing halogen is provided at the interface between the conductive substrate (1) and the charge transfer layer (2) as an undercoat layer of the conductive substrate (1) to provide dark decay. A selenium photoreceptor with improved characteristics has been proposed.

(発明の目的) 本発明は暗減衰特性のみでなく残留電位特性をも向上
した感光体を提供し、レーザビームプリンタなどにおけ
る高解像度の要求に応えうるようにしたものである。
(Object of the Invention) The present invention provides a photoreceptor having improved not only dark decay characteristics but also residual potential characteristics so as to meet the demand for high resolution in laser beam printers and the like.

(問題点を解決するための本発明の手段) 本発明は第3図のように導電性基板(1)と電荷移動
層(2)との界面に、第2図のハロゲンを含むセレン層
(5)を代えてハロゲンを含むセレンテルル層(6)を
設けることにより、暗減衰特性の向上と併せて残留電位
特性をも向上できることを実験的研究の結果見出してな
されたものである。
(Means of the Present Invention for Solving the Problems) As shown in FIG. 3, the present invention provides a selenium layer containing halogen (see FIG. 2) at the interface between the conductive substrate (1) and the charge transfer layer (2). It has been found as a result of an experimental study that by providing a selentellurium layer (6) containing halogen instead of (5), it is possible to improve not only the dark attenuation characteristics but also the residual potential characteristics.

またこの場合ハロゲンを含むセレンテルル層(6)の
膜厚を厚くすると不準物準位の増加を招いて温度特性の
劣化を生ずるため、膜厚の範囲は0.1〜8μmが望まし
い。またハロゲン元素の添加量につても膜厚と同様の傾
向を有することから添加量の範囲は2〜30ppm程度が適
切であり、テルルの添加量についても2〜15w%が望ま
しいことが明らかにされ、これらを適切に選定すること
によって暗減衰特性と残留電位特性の向上、従って品質
の高い画像を実現できることを見出した。
Further, in this case, if the thickness of the selentellurium layer (6) containing halogen is increased, the level of non-conformities is increased and the temperature characteristic is deteriorated. Therefore, the range of the thickness is preferably 0.1 to 8 μm. Also, since the addition amount of the halogen element has the same tendency as the film thickness, it is clear that the addition amount range is preferably about 2 to 30 ppm, and the addition amount of tellurium is preferably 2 to 15 w%. It has been found that by appropriately selecting these, it is possible to improve the dark decay characteristic and the residual potential characteristic, and to realize a high quality image.

次に本発明の実施例について説明する。 Next, examples of the present invention will be described.

(実施例1) 導電性基板(1)であるアルミニウム製ドラム面上に
テルル濃度100w%、ハロゲン濃度10ppm、膜厚3μmの
ハロゲンを含むセレン・テルル層(6)を蒸着し、その
上に高純度セレン(99.999%以上の純度)を膜厚50μm
で蒸着して電荷移動層(2)を形成した。更にその上に
テルル濃度50w%,膜厚0.2μmのセレンテルル合金層か
らなる電荷発生層(2)を形成し、その上に砒素濃度2w
%,膜厚μmのセレン砒素合金からなる表面保護層
(4)を蒸着した。
(Example 1) A selenium / tellurium layer (6) containing halogen having a tellurium concentration of 100 w%, a halogen concentration of 10 ppm, and a film thickness of 3 μm was deposited on an aluminum drum surface serving as a conductive substrate (1), and a high-pressure layer was formed thereon. Purity selenium (purity of 99.999% or more) with a film thickness of 50 μm
To form a charge transfer layer (2). Furthermore, a charge generation layer (2) made of a selenium tellurium alloy layer having a tellurium concentration of 50 w% and a film thickness of 0.2 μm is formed thereon, and an arsenic concentration of 2 w
%, A surface protective layer (4) made of a selenium arsenide alloy having a thickness of μm was deposited.

(実施例2) 実施例1におけるハロゲンを含むセレン・テルル層
(6)のハロゲン濃度を1ppmとした。
(Example 2) The halogen concentration of the selenium / tellurium layer (6) containing halogen in Example 1 was set to 1 ppm.

(実施例3) 実施例1におけるハロゲンを含むセレン・テルル層
(6)のハロゲン濃度を40ppmとした。
Example 3 The halogen concentration of the selenium / tellurium layer (6) containing halogen in Example 1 was set to 40 ppm.

(実施例4) 実施例1におけるハロゲンを含むセレン・テルル層
(6)を膜厚15μmとした。
(Example 4) The selenium / tellurium layer (6) containing halogen in Example 1 was set to a film thickness of 15 µm.

これらの実施例1,2,3,4と、ハロゲンを含むセレン・
テルル層を設けない感光体との画像特性、電気特性を比
較したところ第1表の結果を得た。
These Examples 1, 2, 3, 4 and selenium containing halogen
When the image characteristics and the electric characteristics of the photoconductor without the tellurium layer were compared, the results shown in Table 1 were obtained.

なお判定基準は次の通りである。 The criteria are as follows.

判定基準 解像度:解像度240〜400DPIのレーザビームプリンタ
において、ビーム1dotのon−offで作られた線画が判読
出来ること。
Judgment standard Resolution: A laser beam printer with a resolution of 240 to 400 DPI must be able to read a line image created with a beam of 1 dot on-off.

○ 判読可能 △ ボケル × 判読不可能 暗減衰:暗中で感光ドラム上に+800v帯電させた後、
5秒後の電位保持率。
○ Legible △ Bokel × Not legible Dark decay: After charging + 800v on the photosensitive drum in the dark,
Potential holding ratio after 5 seconds.

○ 90%以上 △ 80%以上 × 80%未満 残留電位:レーザビームプリンタの現像プロセスにお
いて除電後の電位。
○ 90% or more △ 80% or more × less than 80% Residual potential: The potential after static elimination in the developing process of a laser beam printer.

○ 40v以上 △ 60v以下 × 60vを超える (発明の効果) 以上の説明から明らかなように本発明によれば、レー
ザビームプリンタなどに要求される解像度の高い画像が
得られるセレン感光体の提供が可能となる。
○ 40 v or more △ 60 v or less × more than 60 v (Effects of the Invention) As is apparent from the above description, according to the present invention, it is possible to provide a selenium photoreceptor capable of obtaining a high-resolution image required for a laser beam printer or the like. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

第1図,第2図は従来技術の説明図、第3図は本発明の
一実施例の説明図である。 (1)……導電性基体、(2)……電荷移動層、(3)
……電荷発生層、(4)……表面保護層、(5)……ハ
ロゲンを含むセレン層、(6)……ハロゲンを含むセレ
ン・テルル層。
1 and 2 are explanatory diagrams of the prior art, and FIG. 3 is an explanatory diagram of one embodiment of the present invention. (1) ... conductive substrate, (2) ... charge transfer layer, (3)
... A charge generation layer, (4) a surface protective layer, (5) a selenium layer containing halogen, and (6) a selenium / tellurium layer containing halogen.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭57−158845(JP,A) 特開 昭54−70838(JP,A) 特開 昭64−76066(JP,A) (58)調査した分野(Int.Cl.6,DB名) G03G 5/00 - 5/16──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-57-158845 (JP, A) JP-A-54-70838 (JP, A) JP-A-64-76066 (JP, A) (58) Field (Int.Cl. 6 , DB name) G03G 5/00-5/16

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】導電性基板上に電荷移動層と電荷発生層を
順次に積層した機能分離型セレン感光体において、前記
電荷発生層上に砒素を添加したセレン層を表面保護層と
して設けると共に、前記導電性基板と前記電荷移動層と
の間に2〜30ppmのハロゲンを添加し、かつテルル濃度
を2〜15w%とした膜厚0.1〜8μmのセレン・テルル層
を設けたことを特徴とする電子写真用機能分離型セレン
感光体。
1. A function-separated selenium photoconductor in which a charge transfer layer and a charge generation layer are sequentially laminated on a conductive substrate, wherein a selenium layer to which arsenic is added is provided as a surface protection layer on the charge generation layer. A selenium / tellurium layer having a thickness of 0.1 to 8 μm is added between the conductive substrate and the charge transfer layer by adding 2 to 30 ppm of halogen and having a tellurium concentration of 2 to 15 w%. Separated function selenium photoconductor for electrophotography.
JP31287389A 1989-12-01 1989-12-01 Function-separated selenium photoconductor for electrophotography Expired - Fee Related JP2819037B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31287389A JP2819037B2 (en) 1989-12-01 1989-12-01 Function-separated selenium photoconductor for electrophotography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31287389A JP2819037B2 (en) 1989-12-01 1989-12-01 Function-separated selenium photoconductor for electrophotography

Publications (2)

Publication Number Publication Date
JPH03172855A JPH03172855A (en) 1991-07-26
JP2819037B2 true JP2819037B2 (en) 1998-10-30

Family

ID=18034468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31287389A Expired - Fee Related JP2819037B2 (en) 1989-12-01 1989-12-01 Function-separated selenium photoconductor for electrophotography

Country Status (1)

Country Link
JP (1) JP2819037B2 (en)

Also Published As

Publication number Publication date
JPH03172855A (en) 1991-07-26

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