JP2819170B2 - Method for forming polymer film in which semiconductor ultrafine particles are dispersed - Google Patents
Method for forming polymer film in which semiconductor ultrafine particles are dispersedInfo
- Publication number
- JP2819170B2 JP2819170B2 JP27718889A JP27718889A JP2819170B2 JP 2819170 B2 JP2819170 B2 JP 2819170B2 JP 27718889 A JP27718889 A JP 27718889A JP 27718889 A JP27718889 A JP 27718889A JP 2819170 B2 JP2819170 B2 JP 2819170B2
- Authority
- JP
- Japan
- Prior art keywords
- ultrafine particles
- semiconductor
- polymer film
- dispersed
- semiconductor ultrafine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 239000011882 ultra-fine particle Substances 0.000 title claims description 35
- 229920006254 polymer film Polymers 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 19
- 239000000178 monomer Substances 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000002238 attenuated effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical group C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 3
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical group C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- -1 respectively Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- Manufacture Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は例えばオプトエレクトニクス用の非線型光学
素子、光学デバイス用の有色フィルタ等に用いる半導体
超微粒子を分散した高分子膜の形成方法に関する。The present invention relates to a method for forming a polymer film in which semiconductor ultrafine particles are dispersed, for example, for use in a non-linear optical element for optoelectronics, a colored filter for an optical device, and the like. .
（従来の技術） 従来、この種の形成方法としては、有色ガラスフィル
タの場合について示せば、ガラス材と半導体成分を加熱
し溶解させながらガラス中に半導体粒子を形成、分散さ
せた後、冷却させて有色ガラスフィルタを作成してい
た。(Prior art) Conventionally, as a forming method of this kind, in the case of a colored glass filter, semiconductor particles are formed and dispersed in glass while heating and melting a glass material and a semiconductor component, followed by cooling. To make colored glass filters.
（発明が解決しようとする課題） 前記有色ガラスフィルタの形成方法は、ガラス材と半
導体成分を溶解させながらガラス中に半導体粒子を形成
して分散させるため、半導体粒子の粒径をうまく制御出
来ないという問題がある。(Problems to be Solved by the Invention) In the method for forming a colored glass filter, semiconductor particles are formed and dispersed in glass while dissolving a glass material and a semiconductor component, so that the particle size of the semiconductor particles cannot be controlled well. There is a problem.
そこで、ガラス原料を半導体原料と同時に蒸発させ、
ガラス中に半導体超微粒子を分散させる方法が考えられ
るが、ガラスの性質上ガラスを蒸発させることは極めて
困難であり実用性がなく現在全く行われていない。Therefore, the glass material is evaporated at the same time as the semiconductor material,
Although a method of dispersing semiconductor ultrafine particles in glass is conceivable, it is extremely difficult to evaporate the glass due to the properties of the glass, and there is no practical use, and no method has been used at present.
本発明は、前記問題点を解消した均一な粒径の半導体
超微粒子を分散した高分子膜の形成方法を提供すること
を目的とする。An object of the present invention is to provide a method of forming a polymer film in which ultrafine semiconductor particles having a uniform particle size are dispersed, which solves the above-mentioned problems.
（課題を解決するための手段） 本発明の半導体超微粒子を分散した高分子膜の形成方
法は、真空中で高分子の原料モノマーを蒸発させ、これ
を基板上で蒸着重合させて該基板上に高分子膜を形成さ
せつつ、これと同時に半導体原料を昇華させて、得られ
る半導体超微粒子の運動エネルギーを減衰させてこれを
同時に蒸着させて該高分子膜中に分散させることを特徴
とする。(Means for Solving the Problems) In the method for forming a polymer film in which semiconductor ultrafine particles are dispersed according to the present invention, a polymer material monomer is evaporated in a vacuum, and the polymerized monomer is vapor-deposited and polymerized on a substrate. While simultaneously forming a polymer film, the semiconductor raw material is sublimated at the same time, the kinetic energy of the resulting semiconductor ultrafine particles is attenuated, and this is simultaneously deposited and dispersed in the polymer film. .
真空中で蒸発させる高分子膜の一方の原料モノマーと
しては、2,2−ビス（４−アミノフェニル）ヘキサフロ
ロプロパン、2,2−ビス［４−（４−アミノフェノキ
シ）フェニル］ヘキサフロロプロパン等が挙げられる。One of the raw material monomers of the polymer film to be evaporated in a vacuum is 2,2-bis (4-aminophenyl) hexafluoropropane or 2,2-bis [4- (4-aminophenoxy) phenyl] hexafluoropropane And the like.
また、他方の原料モノマーとしては、2,2−ビス（3,4
−ジカルボキシフェニル）ヘキサフロロプロパン二無水
物、トリフロロメチルピロメリット酸二無水物等が挙げ
られる。The other starting monomer is 2,2-bis (3,4
-Dicarboxyphenyl) hexafluoropropane dianhydride, trifluoromethylpyromellitic dianhydride and the like.
高分子膜中に分散させる半導体超微粒子の原料として
は、II−VI族のCdS,CdSe,ZnTe等が挙げられる。Examples of the raw material of the semiconductor ultrafine particles dispersed in the polymer film include II-VI group CdS, CdSe, ZnTe and the like.
また、前記両原料モノマーを蒸発させて基板上で重合
させる際の真空度としては１×10-1〜１×10-5Torr程度
に設定する。In addition, the degree of vacuum in evaporating the two monomer monomers and polymerizing them on the substrate is set to about 1 × 10 −1 to 1 × 10 −5 Torr.
また、半導体超微粒子の運動エネルギーの減衰は、例
えば反射板に反射させて行うようにしてもよいし、或い
は半導体超微粒子が昇華する間にレーザー照射（レーザ
ーによる冷却）を行うようにしてもよい。In addition, the kinetic energy of the semiconductor ultrafine particles may be attenuated by, for example, reflecting off a reflector, or laser irradiation (cooling by laser) may be performed while the semiconductor ultrafine particles sublime. .
また、基板上に形成される高分子膜の形成速度を調整
することによって高分子膜中に分散させる半導体超微粒
子の分散量を調整することが出来る。Further, by adjusting the formation rate of the polymer film formed on the substrate, the amount of the semiconductor ultrafine particles dispersed in the polymer film can be adjusted.
また、基板と半導体原料を昇華させる装置との間に質
量分析装置を設置し、該装置によって昇華する半導体超
微粒子の粒径を選択、制御することが出来る。In addition, a mass spectrometer can be installed between the substrate and the device for sublimating the semiconductor raw material, and the particle size of the semiconductor ultrafine particles sublimated by the device can be selected and controlled.
尚、半導体超微粒子を高分子膜に分散させた後、適当
な熱処理を施すことによって、有機物高分子膜を形成す
る場合も、この加熱により半導体超微粒子は特に変化は
ない。When the organic polymer film is formed by dispersing the semiconductor ultrafine particles in the polymer film and then performing an appropriate heat treatment, the semiconductor ultrafine particles are not particularly changed by the heating.
（作 用） 運動エネルギーを減衰された半導体超微粒子は基板上
で蒸着重合されて形成される高分子膜に取り込まれ均一
に分散される。(Operation) The semiconductor ultrafine particles whose kinetic energy has been attenuated are taken in a polymer film formed by vapor deposition polymerization on a substrate and uniformly dispersed.
（実施例） 以下添付図面に従って本発明の実施例について説明す
る。Embodiment An embodiment of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明方法を実施する装置の１例を示すもの
で、図中、１は処理室を示す。該処理室１内は外部の真
空ポンプその他の真空排気系２に接続すると共に、該処
理室１内に高分子の蒸着膜を形成せしめるべき基板３を
固定板４上に保持するようにした。また、該処理室１内
に前記基板３に対向する位置に高分子膜の原料モノマー
ａとｂを夫々蒸発させるためのガラス製の蒸発用容器5,
5を設け、該各蒸気用容器５をその近傍に設けられた水
晶震動の蒸発モニター（図示せず）と、ハロゲンヒータ
ー６とによって前記高分子膜の原料モノマーａおよびｂ
の蒸発を常に一定化させる所定温度にコントロール出来
るようにした。更に、該処理室１内に前記基板３に対向
させて前記蒸発用容器５の位置とは異なる位置に半導体
原料ｃを昇華させるための孔７（孔径２〜3mm程度）を
備え、１対の銅電極８間に配置されたタングステンヒー
ターセル９を設け、タングステンヒーター10と処理室１
外に設けた赤外線温度計（図示せず）によりヒーター部
の温度をモニターしながら半導体原料ｃを加熱し、熱平
衡に達して所定粒径（40〜100Å程度）に成長した半導
体超微粒子の昇華を常に一定化させる所定温度にコント
ロール出来るようにした。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, in which 1 indicates a processing chamber. The inside of the processing chamber 1 was connected to an external vacuum pump or other vacuum evacuation system 2 and a substrate 3 on which a polymer vapor deposition film was to be formed was held on a fixed plate 4 in the processing chamber 1. Further, in the processing chamber 1, a glass evaporation container 5, for evaporating the raw material monomers a and b of the polymer film, respectively, at a position facing the substrate 3,
5, and each of the vapor containers 5 is provided with a raw material monomer a and b of the polymer film by a quartz vibration evaporation monitor (not shown) provided in the vicinity thereof and a halogen heater 6.
It was made possible to control the temperature to a predetermined temperature to keep the evaporation constant. Further, a hole 7 (hole diameter of about 2 to 3 mm) for sublimating the semiconductor material c is provided in the processing chamber 1 at a position different from the position of the evaporation container 5 so as to face the substrate 3. A tungsten heater cell 9 disposed between copper electrodes 8 is provided, and a tungsten heater 10 and a processing chamber 1 are provided.
The semiconductor raw material c is heated while monitoring the temperature of the heater section by an infrared thermometer (not shown) provided outside, and sublimation of the semiconductor ultrafine particles which have reached thermal equilibrium and have grown to a predetermined particle size (about 40 to 100Å). It was made possible to control to a predetermined temperature that is always constant.
また、基板３を保持する固定板４に固定板４の表面か
ら間隔を存して基板３に対向する反射板11を設けた。
尚、反射板11は固定板４の表面に対してその角度を可変
調整出来るようにしてもよい。このように反射板11のを
設けることによりタングステンヒーターセル９で加熱さ
れて昇華した半導体超微粒子が基板３に到達した際、半
導体超微粒子自体が有する高い運動エネルギーによって
半導体超微粒子が高分子膜に直接蒸着せずに飛散する
が、その飛散した半導体超微粒子を反射板11で基板３側
に反射させることが出来るから、タングステンヒーター
セル９で加熱されて昇華した半導体超微粒子の運動エネ
ルギーが非常に高い場合であってもその運動エネルギー
を減衰することが出来て基板３上に形成されている高分
子膜に確実に蒸着、分散させることが出来る。Further, a reflecting plate 11 facing the substrate 3 was provided on the fixing plate 4 for holding the substrate 3 at an interval from the surface of the fixing plate 4.
The angle of the reflection plate 11 with respect to the surface of the fixed plate 4 may be variably adjusted. By providing the reflecting plate 11 in this way, when the semiconductor ultrafine particles heated and sublimated by the tungsten heater cell 9 reach the substrate 3, the semiconductor ultrafine particles are converted into a polymer film by the high kinetic energy of the semiconductor ultrafine particles themselves. Although the semiconductor ultra-fine particles are scattered without being directly vapor-deposited, the scattered semiconductor ultra-fine particles can be reflected toward the substrate 3 by the reflection plate 11, so that the kinetic energy of the semiconductor ultra-fine particles heated and sublimated by the tungsten heater cell 9 is very low. Even if it is high, its kinetic energy can be attenuated, and it can be surely deposited and dispersed on the polymer film formed on the substrate 3.
次に前記装置を用いて半導体超微粒子を分散した高分
子膜の形成の具体的実施例について説明する。Next, a specific example of forming a polymer film in which semiconductor ultrafine particles are dispersed using the above-described apparatus will be described.
実施例 先ず、蒸発用容器5,5の一方に原料モノマーａとして
2,2−ビス（４−アミノフェニル）ヘキサフロロプロパ
ンと、他方に原料モノマーとして2,2−ビス（3,4−ジカ
ルボキシフェニル）ヘキサフロロプロパン二無水物を夫
々充填し、またタングステンヒーターセル９に半導体原
料ｃとしてCdS粉末を充填した後、処理室１内の全圧を
真空排気系２を介して４×10-3Torrに設定する。Example First, a raw material monomer a was placed in one of the evaporation containers 5,5.
2,2-bis (4-aminophenyl) hexafluoropropane and, on the other hand, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride as a raw material monomer, respectively, and a tungsten heater cell After filling CdS powder as the semiconductor raw material c into 9, the total pressure in the processing chamber 1 is set to 4 × 10 −3 Torr via the evacuation system 2.
次に、蒸発モニターで蒸発用容器5,5から各原料モノ
マーa,bの蒸発量を測定しながらハロゲンヒーター6,6に
よって2,2−ビス（４−アミノフェニル）ヘキサフロロ
プロパンを温度200±１℃に、また2,2−ビス（3,4−ジ
カルボキシフェニル）ヘキサフロロプロパン二無水物を
温度200±１℃に夫々加熱すると共に、赤外線温度計で
タングステンヒーターセル９の孔７からCdSの昇華量を
測定しながらタングステンヒーター10によってCdS粉末
を温度610±10℃に加熱した。Next, 2,2-bis (4-aminophenyl) hexafluoropropane was heated to a temperature of 200 ± 2 by halogen heaters 6 and 6 while measuring the evaporation amount of each raw material monomer a and b from the evaporation containers 5 and 5 with an evaporation monitor. 1 ° C. and 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride were heated to a temperature of 200 ± 1 ° C., respectively, and CdS was injected through a hole 7 of a tungsten heater cell 9 with an infrared thermometer. The CdS powder was heated to a temperature of 610 ± 10 ° C. by the tungsten heater 10 while measuring the amount of sublimation.
次いで、原料モノマーa,bが所定温度に達して所要の
蒸発量が得られた後に、処理室１内の固定板４に保持さ
れた基板３（マツナミ製ガラス）上に該原料モノマーa,
bを60Å／分の析出速度で堆積させポリイミド膜を作成
しながら、所定温度により熱平衡に達して粒径約70Åに
成長したCdS超微粒子をタングステンヒーターセル９の
孔７から昇華させてポリイミド膜に到着させる。その際
高い運動エネルギーを有するCdS超微粒子は該膜に直接
蒸着せずに飛散し、その飛散したCdS超微粒子が反射板1
1に衝突して反射し、その反射したCdS超微粒子が固定板
４と反射板11の間で反射を繰り返すことによってCdS超
微粒子はそれ自体が有する運動エネルギーが減衰されて
基板３上に形成されているポリイミド膜にCdS超微粒子
を蒸着した。Next, after the raw material monomers a and b reach a predetermined temperature and a required amount of evaporation is obtained, the raw material monomers a and b are placed on the substrate 3 (Matsunami glass) held on the fixed plate 4 in the processing chamber 1.
While depositing b at a deposition rate of 60 ° / min to form a polyimide film, ultrafine CdS particles that have reached thermal equilibrium at a predetermined temperature and have grown to a particle size of about 70 ° are sublimated from the holes 7 of the tungsten heater cell 9 to form a polyimide film. Let it arrive. At this time, the CdS ultrafine particles having high kinetic energy are scattered without being directly deposited on the film, and the scattered CdS ultrafine particles are reflected on the reflection plate 1.
The CdS ultra-fine particles are reflected on the substrate 1, and the reflected CdS ultra-fine particles are repeatedly reflected between the fixed plate 4 and the reflecting plate 11, so that the kinetic energy of the CdS ultra-fine particles is attenuated and formed on the substrate 3. Ultrafine CdS particles were deposited on the polyimide film.
尚、原料モノマーa,bは化学量論的にポリイミド膜が
形成されるように蒸発量の調整によって1:1のモル比で
蒸発するようにした。また、原料モノマーa,bの蒸発時
における処理室１内の圧力は４×10-3Torrとした。The raw material monomers a and b were evaporated at a molar ratio of 1: 1 by adjusting the amount of evaporation so that a stoichiometric polyimide film was formed. The pressure in the processing chamber 1 during evaporation of the raw material monomers a and b was set to 4 × 10 −3 Torr.
このようにCdS超微粒子の蒸着したポリイミド膜が形
成された基板３を処理室１内から取り出した後、温度30
0℃の熱処理を施してCdS超微粒子が均一に分散した有色
フィルタを作成した。After the substrate 3 on which the polyimide film on which the CdS ultrafine particles are deposited is taken out from the processing chamber 1, the temperature is lowered to 30 °
A color filter in which CdS ultrafine particles were uniformly dispersed was prepared by performing a heat treatment at 0 ° C.
また、前記実施例では有色フィルタについて説明した
が、本発明はこれに限定されるものではなく、例えばCu
Clのような非線型光学材料の作成にも広く応用出来る。Further, in the above embodiment, the color filter was described, but the present invention is not limited to this, and for example, Cu filter
It can be widely applied to the production of nonlinear optical materials such as Cl.
（発明の効果） このように本発明の形成法によるときは、真空中で高
分子の原料モノマーを蒸発させ、これを基板上で蒸着重
合させて該基板上に高分子膜を形成させつつ、これと同
時に半導体原料を昇華させて、得られる半導体超微粒子
の運動エネルギーを減衰させてこれを同時に蒸着させて
該高分子膜中に分散させるようにしたので、高分子膜中
に均一な粒径の半導体超微粒子を分散させることが出来
るばかりでなく、分散される半導体超微粒子の粒径や濃
度を任意に制御出来る等の効果がある。(Effect of the Invention) As described above, when the formation method of the present invention is used, a polymer material monomer is evaporated in a vacuum, and is vapor-deposited and polymerized on a substrate to form a polymer film on the substrate. At the same time, the semiconductor raw material is sublimated to attenuate the kinetic energy of the resulting ultrafine semiconductor particles, which are simultaneously deposited and dispersed in the polymer film. Not only can be dispersed, but also the particle size and concentration of the dispersed semiconductor ultrafine particles can be arbitrarily controlled.
第１図は本発明半導体超微粒子を分散した高分子膜の形
成方法を実施するための装置の１例の截断面図である。FIG. 1 is a cross-sectional view of an example of an apparatus for carrying out a method for forming a polymer film in which semiconductor ultrafine particles are dispersed according to the present invention.
フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C08J 5/18 C23C 14/12 C23C 14/24Continuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) C08J 5/18 C23C 14/12 C23C 14/24
Claims (2)
せ、これを基板上で蒸着重合させて該基板上に高分子膜
を形成させつつ、これと同時に半導体原料を昇華させ
て、得られる半導体超微粒子の運動エネルギーを減衰さ
せて、これを同時に蒸着させて該高分子膜中に分散させ
ることを特徴とする半導体超微粒子を分散した高分子膜
の形成方法。1. A polymer raw material monomer is obtained by evaporating a polymer raw material monomer in a vacuum and vapor-depositing and polymerizing it on a substrate to form a polymer film on the substrate while simultaneously sublimating a semiconductor raw material. A method for forming a polymer film in which semiconductor ultrafine particles are dispersed, wherein the kinetic energy of the semiconductor ultrafine particles is attenuated, and the kinetic energy is simultaneously evaporated and dispersed in the polymer film.
衰は該半導体超微粒子を反射板に反射させて行うことを
特徴とする請求項１に記載の半導体超微粒子を分散した
高分子膜の形成方法。2. The method for forming a polymer film in which semiconductor ultrafine particles are dispersed according to claim 1, wherein the kinetic energy of the semiconductor ultrafine particles is attenuated by reflecting the semiconductor ultrafine particles on a reflector. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27718889A JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27718889A JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03140335A JPH03140335A (en) | 1991-06-14 |
| JP2819170B2 true JP2819170B2 (en) | 1998-10-30 |
Family
ID=17580034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27718889A Expired - Fee Related JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819170B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5824240A (en) * | 1993-02-12 | 1998-10-20 | Fuji Xerox Co. Ltd. | Nonlinear optical element and process for the preparation of same |
| JPH1017768A (en) * | 1996-07-04 | 1998-01-20 | Fuji Xerox Co Ltd | Polymer composite material and method for producing the same |
-
1989
- 1989-10-26 JP JP27718889A patent/JP2819170B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03140335A (en) | 1991-06-14 |
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