JP2828652B2 - Superconducting element manufacturing method - Google Patents
Superconducting element manufacturing methodInfo
- Publication number
- JP2828652B2 JP2828652B2 JP1089101A JP8910189A JP2828652B2 JP 2828652 B2 JP2828652 B2 JP 2828652B2 JP 1089101 A JP1089101 A JP 1089101A JP 8910189 A JP8910189 A JP 8910189A JP 2828652 B2 JP2828652 B2 JP 2828652B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- superconducting
- temperature
- solid material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 24
- 239000011343 solid material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000002887 superconductor Substances 0.000 claims description 9
- 150000004820 halides Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 31
- 239000012071 phase Substances 0.000 description 21
- 239000010409 thin film Substances 0.000 description 14
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 229910014454 Ca-Cu Inorganic materials 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は、超電導トランジスタ、超電導センサー等の
製造に適用することができる超電導素子の製造方法に関
する。The present invention relates to a method for manufacturing a superconducting element applicable to the production of a superconducting transistor, a superconducting sensor, and the like.
（ロ） 従来の技術 近年、Ｙ−Ba−Cu−Ｏ系で代表される酸化物焼結体が
液体窒素の沸点（77K）より高い臨界温度で超電導状態
に入ることが見出されて脚光を浴びている。(B) Prior art In recent years, it has been discovered that oxide sintered bodies represented by the Y-Ba-Cu-O system enter a superconducting state at a critical temperature higher than the boiling point of liquid nitrogen (77 K), and I'm taking a bath.
超電導トランジスタ、超電導センサー等の超電導素子
は、超電導体薄膜の形成を前提とするものであり、この
薄膜を、たとえば前記酸化物焼結体を用いて、スパッタ
リング法により形成することが知られている。このスパ
ッタリング法は、前記酸化物焼結体をスパッタリング装
置の陰極又は陽極の一方を構成するターゲット材として
配置し、対極に配設された基板上に酸化物超電導物質を
スパッタリングし、その後に熱処理するものである。Superconducting elements such as superconducting transistors and superconducting sensors are based on the premise that a superconducting thin film is formed, and it is known that this thin film is formed by a sputtering method using, for example, the oxide sintered body. . In this sputtering method, the oxide sintered body is disposed as a target material constituting one of a cathode and an anode of a sputtering apparatus, and an oxide superconducting substance is sputtered on a substrate provided at a counter electrode, and then heat-treated. Things.
ところがこのスパッタリング法は、超電導薄膜の組成
に対応した組成の酸化物超電導焼結体を形成し、この焼
結体をターゲットとして基板上にスパッタリングし、そ
の後に熱処理が必要となり、極めて煩雑な工程を必要と
する。However, this sputtering method forms an oxide superconducting sintered body having a composition corresponding to the composition of the superconducting thin film, sputters it on a substrate using this sintered body as a target, and then requires heat treatment, resulting in an extremely complicated process. I need.
そこで、基板上の膜形成後の熱処理を必要としない化
学的な気相成長法として例えばハロイド系気相成長法に
ついて、文献“High−Tc BiSrCaCuOx on MgO Supercond
uctor Grown By VPE"（M.Ihara et al.5th Internation
al Workshop on Future Eletron Devices.pp137〜141
（1988））で提案されている。For example, as a chemical vapor deposition method that does not require a heat treatment after the formation of a film on a substrate, for example, a halide-based vapor deposition method is described in the document “High-Tc BiSrCaCuOx on MgO Supercond
uctor Grown By VPE "(M.Ihara et al. 5th International
al Workshop on Future Eletron Devices.pp137-141
(1988)).
これは第２図に示すように、気相成長装置を用いるも
ので、石英ソースチャンバー11内に、ソース材料である
BiCl3、CuI、CaI2及びSrI2の固型材料（固形材料）を配
置すると共に石英ソースチャンバー11を有する石英反応
管12内にMgO基板13を配置し、各ソース材料及び基板13
を各ゾーン毎に加熱する抵抗加熱炉14を反応管12の周囲
に設けて構成される。抵抗加熱炉14の抵抗加熱線15によ
りソース温度はBiCl3を200℃、CuIを500℃、CaI2を800
℃、SrI2を825℃とし、基板13の温度を825℃として、ソ
ースチャンバー11にHeガスを流入することにより、各ソ
ース材料からの蒸気を基板13上に移行させ、反応管12に
流入されるHeガスを混入したO2ガスの雰囲気下で反応さ
せて基板13上に、Bi−Sr−Ca−Cu−Ｏ系の高温起電導薄
膜を形成するものである。この方法によれば、マルチタ
ーゲットスパッタリングや多元蒸着法等のような物理的
成膜方法に比べ、化学的な結合力を利用するため、高品
位なエピタキシャル膜を、後の熱処理なしで成長でき
る。This uses a vapor phase epitaxy apparatus as shown in FIG. 2, and contains a source material in a quartz source chamber 11.
A solid material (solid material) of BiCl 3 , CuI, CaI 2 and SrI 2 is arranged, and an MgO substrate 13 is arranged in a quartz reaction tube 12 having a quartz source chamber 11.
A resistance heating furnace 14 that heats each zone is provided around the reaction tube 12. Source temperature by resistive heating wire 15 of the resistance heating furnace 14 BiCl 3 to 200 ° C., CuI and 500 ° C., the CaI 2 800
C., SrI 2 was set to 825 ° C., and the temperature of the substrate 13 was set to 825 ° C., and He gas was flown into the source chamber 11 to transfer vapor from each source material onto the substrate 13 and flowed into the reaction tube 12. A high-temperature electroconductive thin film of Bi—Sr—Ca—Cu—O system is formed on the substrate 13 by reacting in an atmosphere of O 2 gas mixed with He gas. According to this method, a chemical bonding force is used as compared with a physical film forming method such as multi-target sputtering or multi-source vapor deposition, so that a high-quality epitaxial film can be grown without a subsequent heat treatment.
（ハ） 発明が解決しようとする課題 従来の気相成長法においては、一般に単一キャリアガ
スを使用し、熱平衡状態でソース材料を蒸発させるた
め、単一組成の膜を形成するのには都合がよいが、膜の
組成を積層する厚みによって変化させるには、膜の組成
を異ならしめるために各ソース温度を抵抗加熱炉14によ
り調整する必要があるが、熱平衡状態に至る時間が単一
原子層の成膜速度に比べて遅いため、膜の組成を積層す
る厚みによって異ならしめることが困難である。(C) Problems to be Solved by the Invention In the conventional vapor deposition method, since a single carrier gas is generally used and the source material is evaporated in a thermal equilibrium state, it is convenient to form a film having a single composition. In order to change the film composition depending on the thickness of the film to be laminated, it is necessary to adjust each source temperature with a resistance heating furnace 14 in order to make the film composition different. Since it is slower than the film forming speed of the layer, it is difficult to vary the composition of the film depending on the thickness of the layer.
本発明はかかる点に鑑み発明されたものにして、超電
導相化合物薄膜と非超電導相化合物薄膜を、膜の成長過
程において原子層、分子層レベルでエピタキシャル成長
させながら形成して、超電導素子を製造する方法を提供
せんとするものである。The present invention has been made in view of the above points, and manufactures a superconducting element by forming a superconducting phase compound thin film and a non-superconducting phase compound thin film while epitaxially growing them at an atomic layer and a molecular layer level in a film growth process. It does not provide a method.
（ニ） 課題を解決するための手段 本発明は、高温酸化物超電導体組成の構成元素のハロ
ゲン化物からなるソース材料としての固形材料とこれと
離間して配置される基板を、キャリアガス中に配置する
と共に、前記固形材料を加熱蒸発させ、加熱された基板
上に、超電導相化合物からなる膜と非超電導相化合物か
らなる膜を積層形成するものであって、前記固形材料の
温度及び前記基板の温度を単一原子層の成膜速度より早
く異ならしめ、基板上に、前記超電導相化合物からなる
膜と前記非超電導相化合物からなる膜を形成することを
特徴とする。(D) Means for Solving the Problems The present invention provides a solid material as a source material composed of a halide of a constituent element of a high-temperature oxide superconductor composition and a substrate which is disposed separately from the solid material in a carrier gas. Arranging and heating and evaporating the solid material, on the heated substrate, to form a stack of a film made of a superconducting phase compound and a film made of a non-superconducting phase compound, the temperature of the solid material and the substrate Is made faster than the deposition rate of the single atomic layer, and a film made of the superconducting phase compound and a film made of the non-superconducting phase compound are formed on the substrate.
（ホ） 作用 前記固型材料の加熱温度及び基板温度を、単一原子層
の成膜速度より早く異ならしめることにより、熱平衡状
態を抵抗加熱の制御により得るものより、早く得ること
ができる。従って、基板上の超電導相化合物膜と非超電
導相化合物膜とを層状に形成することができる。(E) Function By making the heating temperature and the substrate temperature of the solid material different from each other faster than the deposition rate of a single atomic layer, a thermal equilibrium state can be obtained earlier than that obtained by controlling resistance heating. Therefore, the superconducting phase compound film and the non-superconducting phase compound film on the substrate can be formed in layers.
前記加熱温度及び基板温度は、抵抗加熱と赤外線又は
高周波加熱により、単一原子層の成膜速度より早く異な
るものとなる。The heating temperature and the substrate temperature are different from each other by the resistance heating and the infrared or high frequency heating, faster than the deposition rate of the single atomic layer.
（ヘ） 実施例 本発明の一実施例を第１図に基いて説明する。第１図
は気相成長装置の概略図である。(F) Embodiment One embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram of a vapor phase growth apparatus.
この図において、気相成長装置は、石英反応管１、石
英ソースチャンバー２、横型５ゾーン抵抗加熱炉３、石
英ファイバー管４及びガスコントロールシステムから構
成されている。In this figure, the vapor phase growth apparatus includes a quartz reaction tube 1, a quartz source chamber 2, a horizontal 5-zone resistance heating furnace 3, a quartz fiber tube 4, and a gas control system.
石英ソースチャンバー２内には、高温酸化物超電導体
組成を構成する複数の元素のハロゲン化物の固型材料が
各ゾーンに分けて配置されている。この実施例では、Bi
−Sr−Ca−Cu系酸化物超電導体組成の構成元素のハロゲ
ン化物として、BiCl3、CuI、CaI2及びSrI2の固型材料を
夫々ボートに載置して、各ゾーン毎に対応して配置す
る。In the quartz source chamber 2, a solid material of a halide of a plurality of elements constituting the high-temperature oxide superconductor composition is arranged in each zone. In this embodiment, Bi
As the halide of the constituent elements of -Sr-Ca-Cu-based oxide superconductor composition, BiCl 3, CuI, by placing the solid materials CaI 2 and SrI 2 respectively boat, in correspondence with each zone Deploy.
石英反応管１内には、ソースチャンバー２の開口側に
（100）MgO基板５をサセプタに載置して配置する。In the quartz reaction tube 1, a (100) MgO substrate 5 is placed on a susceptor at the opening side of the source chamber 2.
抵抗加熱炉３は、各ゾーンに対応した抵抗加熱線６が
反応管の周囲に配置され、CuI及びCaI2の各固型材料及
び基板５に対応する抵抗加熱線６には夫々石英ファイバ
ー管４が設けられている。抵抗加熱炉３による温度は、
BiCl3が180℃、CuIが450℃、CaI2が700℃、SrI2が825
℃、基板５が800℃に設定されている。また、石英ファ
イバー管４から赤外線照射により、CuIは450℃から500
℃に、CaI2は700℃から800℃に、基板５は800℃から850
℃に加熱される。この際の温度変化は赤外線を用いてい
るため数秒以内と急峻である。In the resistance heating furnace 3, resistance heating wires 6 corresponding to each zone are arranged around the reaction tube, and a quartz fiber tube 4 is connected to the resistance heating wires 6 corresponding to the solid materials of CuI and CaI 2 and the substrate 5, respectively. Is provided. The temperature of the resistance heating furnace 3 is
BiCl 3 is 180 ° C., CuI is 450 ° C., CaI 2 is 700 ° C., SrI 2 825
° C, and the substrate 5 is set at 800 ° C. In addition, by irradiating infrared rays from the quartz fiber tube 4, the CuI is changed from 450 ° C to 500 ° C.
° C, CaI 2 from 700 ° C to 800 ° C, Substrate 5 from 800 ° C to 850 ° C
Heat to ° C. The temperature change at this time is steep within several seconds because infrared rays are used.
抵抗加熱と赤外線加熱の状態で、ソースチャンバー２
にキャリアガスとして純度99.99％のHeガスをコントロ
ールシステムにより流量２／分を流す。ソースチャン
バー２内にはO2ガスを流さないので、各固型材料からの
蒸気は反応せず、基板５上に移行する。Source chamber 2 with resistance heating and infrared heating
He gas with a purity of 99.99% is flowed as a carrier gas at a flow rate of 2 / min by the control system. Since no O 2 gas flows into the source chamber 2, the vapor from each solid material does not react and moves onto the substrate 5.
反応管１には反応ガスとしての純度99.99％O2ガスを
0.1／分と、ソースチャンバー２内との流速を調整す
るための純度99.99％のHeガスを２／分とがガスコン
トロールシステムにより調整されて流入される。従っ
て、基板５上で、各蒸気が反応してBi2Sr2Ca2Cu3Ox組成
の膜が、成膜速度10Å／分で形成される。この成膜速度
は遅いが、その分結晶性、平坦性に優れた膜が得られ
る。100分成膜を行ない、1000Åの超導電相化合物の膜
を形成する。尚、この膜の組成はICP分析により求め
た。また、この膜の抵抗温度特性を測定したところ、臨
界温度Tc（end）が110Kであった。従って、Bi2Sr2Ca2Cu
3Oxは酸化物超電導体であることがわかる。In the reaction tube 1, 99.99% O 2 gas as a reaction gas is used.
He gas having a purity of 99.99% for adjusting the flow velocity in the source chamber 2 at 0.1 / min and 2 / min is adjusted by the gas control system and introduced. Therefore, each vapor reacts on the substrate 5 to form a film having a composition of Bi 2 Sr 2 Ca 2 Cu 3 Ox at a film formation rate of 10 ° / min. Although this film formation rate is slow, a film excellent in crystallinity and flatness can be obtained. The film is formed for 100 minutes to form a film of the superconducting phase compound of 1000Å. The composition of this film was determined by ICP analysis. When the resistance temperature characteristics of this film were measured, the critical temperature Tc (end) was 110 K. Therefore, Bi 2 Sr 2 Ca 2 Cu
It can be seen that 3 Ox is an oxide superconductor.
上記膜の形成に続いて、CuI、CaI2及び基板５に対す
る赤外線加熱を止めると、１分以内に各ゾーンの温度は
抵抗加熱のみによる初期設定した温度180℃−450℃−70
0℃−825℃−800℃に急峻に戻る。この熱平衡状態で10
分間成膜を行ったところ、約100ÅのBi2Sr2Cu1Ox膜を得
た。この膜組成はICP分析により求めた。また、この膜
を液体窒素（沸点77K）に浸しても抵抗は零にはなら
ず、常電導相又は半導体相の非超電導相の化合物である
ことが判別した。Following the formation of the film, when the infrared heating of CuI, CaI 2 and the substrate 5 is stopped, the temperature of each zone is set to the initial temperature of 180 ° C. to 450 ° C.
Rapidly returns to 0 ℃ -825 ℃ -800 ℃. In this thermal equilibrium state, 10
After forming the film for 2 minutes, a Bi 2 Sr 2 Cu 1 Ox film of about 100 ° was obtained. This film composition was determined by ICP analysis. The resistance was not reduced to zero even when the film was immersed in liquid nitrogen (boiling point: 77 K), and it was determined that the film was a non-superconducting phase compound of a normal conducting phase or a semiconductor phase.
以上の工程で基板５上にBi2Sr2Ca2Cu3Oxの起電導相化
合物薄膜とBi2Sr2Cu1Oxの非超電導相化合物薄膜を、両
者の基本格子が同一であるため、急峻なエピタキシャル
界面で層状に形成することができる。In the above steps, a thin film of the electroconductive phase compound of Bi 2 Sr 2 Ca 2 Cu 3 Ox and a thin film of the non-superconducting phase compound of Bi 2 Sr 2 Cu 1 Ox are formed on the substrate 5 because the basic lattices of both are the same. It can be formed in a layer at an appropriate epitaxial interface.
また、上記非超電導相化合物薄膜を形成した後、再び
赤外線照射により、CuI、CaI2及び基板の温度を夫々500
℃、800℃及び850℃に戻すことにより、前述と同様にBi
2Sr2Ca2Cu3Oxの超電導相化合物薄膜を1000Å形成する。
かくして、超電導相化合物薄膜／非超電導相化合物薄膜
／超電導相化合物薄膜を急峻なエピタキシャル界面で層
状に形成することができる。Further, the after forming the non-superconducting phase compound thin film, again by infrared irradiation, CuI, respectively the temperature of the CaI 2 and the substrate s 500
℃, 800 ℃ and 850 ℃, Bi as above
A 1000 超 superconducting phase compound thin film of 2 Sr 2 Ca 2 Cu 3 Ox is formed.
Thus, the superconducting phase compound thin film / non-superconducting phase compound thin film / superconducting phase compound thin film can be formed in layers at a steep epitaxial interface.
以上の実施例においては。ハロゲン化物の固型材料の
加熱温度と基板温度を、単一原子層の成膜速度より早く
異ならしめる手段として、赤外線加熱を用いたが、この
赤外線加熱に代って高周波加熱を用いることができる。
また、実施例では、Bi−Sr−Ca−Cu系酸化物超電導体組
成のものを用いたが、他の系たとえばYb−Ba−Cu系、Tl
−Ba−Ca−Cu系酸化物超電導体組成にも適用できる。In the above embodiment. Infrared heating was used as a means to make the heating temperature of the halide solid material and the substrate temperature different from the film formation rate of a single atomic layer, but high-frequency heating could be used instead of this infrared heating. .
Further, in the examples, a material having a Bi-Sr-Ca-Cu-based oxide superconductor composition was used, but other systems such as Yb-Ba-Cu-based and Tl-based
Also applicable to -Ba-Ca-Cu based oxide superconductor composition.
（ト） 効果 本発明は、高温酸化物超電導体組成の構成元素のハロ
ゲン化物の固型材料温度と基板温度を、単一原子層の成
膜速度より早く異ならしめて、超電導相化合物と非超電
導相化合物を層状に形成するから、両化合物薄膜をエピ
タキシャル状態で単結晶性を保持した状態で順次積層す
ることができ、超電導素子を製造することができる。(G) Effect The present invention provides a superconducting phase compound and a non-superconducting phase by making the solid material temperature and the substrate temperature of the halides of the constituent elements of the high-temperature oxide superconductor composition faster than the single atomic layer deposition rate. Since the compound is formed in layers, both compound thin films can be sequentially laminated in an epitaxial state while maintaining single crystallinity, and a superconducting element can be manufactured.
また、上記温度を酸化させるに際して、赤外線又は高
周波加熱を用いると、熱平衡状態に達するまでの応答速
度が数10ミリ秒台まで高速化が可能で、この速度は単一
原子層の成膜速度に比べて十分に早く、単一原子層、分
子層での組成の制御を十分な精度で行うことができる。In addition, when oxidizing the above temperature, if infrared or high-frequency heating is used, the response speed until reaching the thermal equilibrium state can be increased to the order of several tens of milliseconds, and this speed is reduced to the deposition rate of a single atomic layer. The control of the composition in a single atomic layer and a molecular layer can be performed with sufficient accuracy, as compared with that of the first embodiment.
第１図は本発明に用いる気相成長装置の概略図、第２図
は従来例で用いる気相成長装置の概略図である。FIG. 1 is a schematic view of a vapor phase growth apparatus used in the present invention, and FIG. 2 is a schematic view of a vapor phase growth apparatus used in a conventional example.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C01G 1/00 - 57/00 H01L 39/00 - 39/24 H01B 12/00──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 6 , DB name) C01G 1/00-57/00 H01L 39/00-39/24 H01B 12/00
Claims (2)
ゲン化物からなるソース材料としての固形材料とこれと
離間して配置される基板を、キャリアガス中に配置する
と共に、前記固形材料を加熱蒸発させ、加熱された基板
上に、超電導相化合物からなる膜と非超電導相化合物か
らなる膜を積層形成するものであって、前記固形材料の
温度及び前記基板の温度を単一原子層の成膜速度より早
く異ならしめ、基板上に、前記超電導相化合物からなる
膜と前記非超電導相化合物からなる膜を形成することを
特徴とする超伝導素子の製造方法。1. A solid material as a source material comprising a halide of a constituent element of a high-temperature oxide superconductor composition and a substrate disposed separately from the solid material are placed in a carrier gas, and the solid material is heated. A film composed of a superconducting phase compound and a film composed of a non-superconducting phase compound are laminated on a substrate that has been evaporated and heated, wherein the temperature of the solid material and the temperature of the substrate are formed in a single atomic layer. A method for manufacturing a superconducting element, comprising: forming a film made of the superconducting phase compound and a film made of the non-superconducting phase compound on a substrate at a speed different from the film speed.
抗加熱と赤外線又は高周波照射の制御により制御するこ
とを特徴とする請求項（１）記載の超伝導素子の製造方
法。2. The method for manufacturing a superconducting element according to claim 1, wherein the temperature of the predetermined solid material and the substrate is controlled by controlling resistance heating and infrared or high frequency irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089101A JP2828652B2 (en) | 1989-04-07 | 1989-04-07 | Superconducting element manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1089101A JP2828652B2 (en) | 1989-04-07 | 1989-04-07 | Superconducting element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02267106A JPH02267106A (en) | 1990-10-31 |
| JP2828652B2 true JP2828652B2 (en) | 1998-11-25 |
Family
ID=13961499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1089101A Expired - Fee Related JP2828652B2 (en) | 1989-04-07 | 1989-04-07 | Superconducting element manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2828652B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0248404A (en) * | 1988-08-10 | 1990-02-19 | Fujitsu Ltd | Method for forming superconducting thin film and apparatus therefor |
-
1989
- 1989-04-07 JP JP1089101A patent/JP2828652B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02267106A (en) | 1990-10-31 |
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