JP2830604B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2830604B2 JP2830604B2 JP10941692A JP10941692A JP2830604B2 JP 2830604 B2 JP2830604 B2 JP 2830604B2 JP 10941692 A JP10941692 A JP 10941692A JP 10941692 A JP10941692 A JP 10941692A JP 2830604 B2 JP2830604 B2 JP 2830604B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- semiconductor device
- interlayer insulating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 47
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 22
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 6
- 125000003282 alkyl amino group Chemical group 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 alkyl amide Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特に層間絶縁膜の形成方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming an interlayer insulating film.
【０００２】[0002]
【従来の技術】近年、半導体装置の高集積化は益々進
み、金属配線工程においても、微細化配線、多層化金属
配線の進展が著しい。2. Description of the Related Art In recent years, high integration of semiconductor devices has been increasingly advanced, and fine wiring and multi-layered metal wiring have been remarkably developed in a metal wiring process.
【０００３】従来、多層配線を有する半導体装置の層間
絶縁膜は、シラン（ＳｉＨ4 ）と亜酸化窒素（Ｎ2 Ｏ）
を用いプラズマＣＶＤ法によって形成された酸化シリコ
ン膜が使用されていた。Conventionally, an interlayer insulating film of a semiconductor device having a multilayer wiring is made of silane (SiH 4 ) and nitrous oxide (N 2 O).
And a silicon oxide film formed by a plasma CVD method.
【０００４】しかしながら、近年、金属配線の微細化が
進み、金属配線の線間隔が１μｍ以下と狭くなって来
た。このような狭い間隔においては、シランを用いた酸
化シリコン膜では、段差被覆性が十分でなく、平坦性が
低下してしばしばボイド（空隙）を発生し、上層の金属
配線形成工程における加工精度の低下や断線等を生ずる
という問題点があった。このような問題点を解決する段
差被覆性の良好な酸化シリコン膜として、テトラエトキ
シシラン（ＴＥＯＳ）と酸素を用いたプラズマＣＶＤ法
によって形成される酸化シリコン膜、或はテトラエトキ
シシランとオゾン（Ｏ3 ）を用いた常圧ＣＶＤ法によっ
て形成される酸化シリコン膜が用いられるようになっ
た。However, in recent years, the miniaturization of metal wiring has progressed, and the line spacing of metal wiring has been reduced to 1 μm or less. In such a narrow space, the silicon oxide film using silane does not have sufficient step coverage, and the flatness is reduced, and voids are often generated. There has been a problem that a drop or disconnection occurs. As a silicon oxide film having good step coverage to solve such a problem, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane (TEOS) and oxygen, or tetraethoxysilane and ozone (O A silicon oxide film formed by a normal pressure CVD method using 3 ) has come to be used.
【０００５】図６は従来の半導体装置の製造方法の第１
の例を説明するための断面図である。FIG. 6 shows a first example of a conventional method for manufacturing a semiconductor device.
It is sectional drawing for demonstrating the example of.
【０００６】図６に示すように、半導体基板１の上に形
成した酸化シリコン膜２の上に下層のアルミニウム合金
配線３を選択的に形成する。次に、アルミニウム合金配
線３を含む表面にテトラエトキシシランと酸素を用いた
プラズマＣＶＤ法により、層間絶縁膜として酸化シリコ
ン膜４を堆積する。次に、酸化シリコン膜４の上にレジ
スト膜を塗布し、このレジスト膜と酸化シリコン膜４と
をほぼ同じエッチングレートでエッチバック（以下レジ
ストエッチバック法と記す）し表面を平坦化する。次
に、酸化シリコン膜４の上に上層のアルミニウム合金配
線５を選択的に形成し、アルミニウム合金配線５を含む
表面にパッシベーション膜６を形成する。As shown in FIG. 6, a lower aluminum alloy wiring 3 is selectively formed on a silicon oxide film 2 formed on a semiconductor substrate 1. Next, a silicon oxide film 4 is deposited as an interlayer insulating film on the surface including the aluminum alloy wiring 3 by a plasma CVD method using tetraethoxysilane and oxygen. Next, a resist film is applied on the silicon oxide film 4, and the resist film and the silicon oxide film 4 are etched back at substantially the same etching rate (hereinafter referred to as a resist etch back method) to flatten the surface. Next, an upper aluminum alloy wiring 5 is selectively formed on the silicon oxide film 4, and a passivation film 6 is formed on a surface including the aluminum alloy wiring 5.
【０００７】図７は従来の半導体装置の製造方法の第２
の例を説明するための断面図である。FIG. 7 shows a second example of the conventional semiconductor device manufacturing method.
It is sectional drawing for demonstrating the example of.
【０００８】図７に示すように、第１の従来例と同様の
工程で半導体基板１の上に設けた酸化シリコン膜２の上
に下層のアルミニウム合金配線３及び酸化シリコン膜４
を順次形成した後、テトラエトキシシランとオゾンを用
いた常圧ＣＶＤ法により酸化シリコン膜７を堆積して酸
化シリコン膜４の上面に生じた段差部や凹部に充填す
る。酸化シリコン膜７は、段差被覆性が特に優れる為、
微細なアルミニウム合金配線によって生ずる段差部や凹
部においても、ボイドを生じることがない。次に、レジ
ストエッチバック法によって、酸化シリコン膜４，７の
表面を平坦化した後、上層のアルミニウム合金配線５を
形成し、アルミニウム合金配線５を含む表面にパッシベ
ーション膜６を形成する。As shown in FIG. 7, a lower aluminum alloy wiring 3 and a silicon oxide film 4 are formed on a silicon oxide film 2 provided on a semiconductor substrate 1 in the same process as the first conventional example.
Are sequentially formed, and a silicon oxide film 7 is deposited by a normal pressure CVD method using tetraethoxysilane and ozone to fill a step portion or a concave portion formed on the upper surface of the silicon oxide film 4. Since the silicon oxide film 7 is particularly excellent in step coverage,
Voids are not generated even in steps and recesses caused by fine aluminum alloy wiring. Next, after the surfaces of the silicon oxide films 4 and 7 are flattened by a resist etch-back method, an upper aluminum alloy wiring 5 is formed, and a passivation film 6 is formed on the surface including the aluminum alloy wiring 5.
【０００９】[0009]
【発明が解決しようとする課題】この従来の半導体装置
の製造方法では、形成された層間絶縁膜が水を吸収し易
く図８に示すように、上層の配線上にパッシベーション
膜を形成する際に層間絶縁膜から離脱する水分によっ
て、下層のアルミニウム合金配線３の一部にボイド８を
生じる。In this conventional method of manufacturing a semiconductor device, the formed interlayer insulating film easily absorbs water, and as shown in FIG. 8, it is difficult to form a passivation film on an upper wiring. Voids 8 are generated in a part of the lower aluminum alloy wiring 3 due to moisture released from the interlayer insulating film.
【００１０】すなわち、配線となるアルミニウム膜又は
アルミニウム合金膜はスパッタ等により堆積されるが、
このアルミニウム膜を緻密に堆積するのは困難で、アル
ミニウム原子間あるいはアルミニウム多結晶間に隙間が
生じてしまう。層間絶縁膜が水分を吸収した状態で加熱
すると、アルミニウム膜にこの水分が接してしまうの
で、この水分によって生じた水蒸気圧力によってアルミ
ニウム原子が押しのけられてしまうため、アルミニウム
膜が緻密になる分だけ、加熱前には分散していた隙間が
集まってボイドになってしまうのである。That is, although an aluminum film or an aluminum alloy film serving as a wiring is deposited by sputtering or the like,
It is difficult to deposit this aluminum film densely, and a gap is generated between aluminum atoms or between aluminum polycrystals. When the interlayer insulating film is heated while absorbing moisture, the moisture comes into contact with the aluminum film, and aluminum atoms are pushed away by the water vapor pressure generated by the moisture. Before heating, the gaps that were dispersed gather together to form voids.
【００１１】このようなボイドは、エレクトロマイグレ
ーション特性を劣化させ、信頼性を低下させるという問
題がある。[0011] Such voids have the problem of deteriorating electromigration characteristics and reducing reliability.
【００１２】[0012]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体基板上に設けた下層配線を含む表面に
窒素を含有する酸化シリコン膜を堆積して層間絶縁膜を
形成する工程と、前記層間絶縁膜の上に上層配線を形成
する工程とを含む半導体装置の製造方法において、前記
層間絶縁膜がアルキルアミノシラン及び酸素を含むガス
を用いたプラズマＣＶＤ法により堆積された窒素を含有
する酸化シリコン膜からなることを特徴とし、又、別の
方法として、前記層間絶縁膜がアルコキシ基とアルキル
アミノ基とを有するシリコン化合物及び酸素を含むガス
を用いたプラズマＣＶＤ法により堆積された窒素を含有
する酸化シリコン膜からなることを特徴としている。 According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a semiconductor device on a surface including a lower wiring provided on a semiconductor substrate;
Depositing a silicon oxide film containing nitrogen to form an interlayer insulating film
Forming and forming an upper wiring on the interlayer insulating film
And a method of manufacturing a semiconductor device, comprising:
Gas whose interlayer insulating film contains alkylaminosilane and oxygen
Contains nitrogen deposited by plasma CVD using
Characterized by a silicon oxide film
As a method, the interlayer insulating film has an alkoxy group and an alkyl group.
Gas containing silicon compound having an amino group and oxygen
Contains nitrogen deposited by plasma CVD using
It is characterized by being made of a silicon oxide film.
【００１３】[0013]
【実施例】次に、本発明に関連する第１の関連技術につ
いて図面を参照して説明する。但し、半導体装置の構造
は、従来技術において説明したものと同様であるため図
面を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a first related art related to the present invention will be described with reference to the drawings. However, since the structure of the semiconductor device is the same as that described in the related art, the drawing is omitted.
【００１４】半導体基板に設けた絶縁膜の上に下層のア
ルミニウム配線又はアルミ合金配線を形成し、この下層
の配線を含む表面にテトラエトキシシラン（ＴＥＯＳ）
とアンモニアを用いたプラズマＣＶＤ法により、窒素を
含有する酸化シリコン膜を堆積し、層間絶縁膜を形成す
る。A lower aluminum wiring or an aluminum alloy wiring is formed on an insulating film provided on a semiconductor substrate, and tetraethoxysilane (TEOS) is formed on a surface including the lower wiring.
A silicon oxide film containing nitrogen is deposited by a plasma CVD method using hydrogen and ammonia to form an interlayer insulating film.
【００１５】図１は、枚葉型プラズマＣＶＤ装置におい
て、テトラエトキシシランガス１５０ＳＣＣＭ，窒素ガ
ス７００ＳＣＣＭ，真空度４Ｔｏｒｒ，プラズマ高周波
電力５００Ｗの条件の下で、アンモニア流量を変化させ
た場合の酸化シリコン膜中の窒素濃度と、大気に曝した
後の水分量を示す図である。FIG. 1 shows a silicon oxide film in a single-wafer plasma CVD apparatus when the flow rate of ammonia is changed under the conditions of 150 SCCM of tetraethoxysilane gas, 700 SCCM of nitrogen gas, 4 Torr of vacuum, and 500 W of high frequency power of plasma. FIG. 4 is a diagram showing the nitrogen concentration of the sample and the amount of water after exposure to the atmosphere.
【００１６】図１に示すように、アンモニア添加によっ
て、酸化シリコン膜中に窒素がとり込まれ、吸湿水分量
が急激に減少する。本実施例におけるアンモニア流量と
して２０〜４０ＳＣＣＭが適当である。また、膜中に残
存する炭素を減少させる為、亜酸化窒素（Ｎ2 Ｏ）を１
０ＳＣＣＭ添加しても良い。以後、レジストエッチバッ
ク法を用い酸化シリコン膜の表面を平坦化し、上層のア
ルミ合金配線及びパッシベーション膜を形成する。As shown in FIG. 1, nitrogen is taken into the silicon oxide film by the addition of ammonia, and the amount of absorbed moisture decreases rapidly. A suitable flow rate of ammonia in this embodiment is 20 to 40 SCCM. Further, in order to reduce carbon remaining in the film, nitrous oxide (N 2 O)
0 SCCM may be added. Thereafter, the surface of the silicon oxide film is flattened by using a resist etch-back method, and an upper aluminum alloy wiring and a passivation film are formed.
【００１７】 本発明の第１の実施例は層間絶縁膜と
してアルキルアミノシランを用い窒素を含有する酸化シ
リコン膜を形成する。In the first embodiment of the present invention, a nitrogen-containing silicon oxide film is formed using alkylaminosilane as an interlayer insulating film.
【００１８】 図２は第１の実施例のテトラジメチルアミノシラン （Ｓｉ〔Ｎ（ＣＨ3）2〕4）１００ＳＣＣＭ、窒素７０
０ＳＣＣＭ、真空度４Ｔｏｒｒ、パワー５００Ｗの条件
下で酸素流量を変化させた場合の、酸化シリコン膜中の
窒素濃度、吸湿水分量を示す図である。本実施例におい
ては、より容易に窒素がとり込まれることが出来、吸湿
水分量が少ない。酸素流量として、２０ＳＣＣＭが適当
である。FIG. 2 shows a first embodiment of tetradimethylaminosilane (Si [N (CH 3 ) 2 ] 4 ) 100 SCCM, nitrogen 70
FIG. 4 is a diagram showing the nitrogen concentration and the amount of moisture absorbed in a silicon oxide film when the oxygen flow rate is changed under the conditions of 0 SCCM, a degree of vacuum of 4 Torr, and a power of 500 W. In this embodiment, nitrogen can be taken in more easily, and the amount of absorbed moisture is small. An appropriate oxygen flow rate is 20 SCCM.
【００１９】本発明の第２の実施例は層間絶縁膜として
アルキルアミノ基と、アセトキシ基とを有するシリコン
化合物を用い窒素を含有する酸化シリコン膜を形成す
る。In the second embodiment of the present invention, a silicon oxide film containing nitrogen is formed using a silicon compound having an alkylamino group and an acetoxy group as an interlayer insulating film.
【００２０】 図３はジエトキシジジメチルアミノシラン （Ｓｉ〔ＯＣ2 Ｈ5〕2〔Ｎ（ＣＨ3）2〕2）１００ＳＣ
ＣＭ，窒素７００ＳＣＣＭ，真空度４Ｔｏｒｒ、パワー
５００Ｗの条件下で、酸素流量を変化させた場合の酸化
シリコン膜中の窒素濃度と吸湿水分量を示す図である。
特性は第１の関連技術と、第１の実施例の中間的性質を
有し、酸素流量は２０ＳＣＣＭが適当である。FIG. 3 shows diethoxydidimethylaminosilane (Si [OC 2 H 5 ] 2 [N (CH 3 ) 2 ] 2 ) 100 SC
FIG. 3 is a diagram showing the nitrogen concentration and the amount of moisture absorbed in a silicon oxide film when the oxygen flow rate is changed under the conditions of CM, nitrogen at 700 SCCM, vacuum degree of 4 Torr, and power of 500 W.
The characteristics are intermediate between those of the first related art and the first embodiment, and a suitable oxygen flow rate is 20 SCCM.
【００２１】本発明に関連する技術として、第１の関連
技術を既に紹介したが、ここで更に、第２、第３の関連
技術も併せて紹介しておく。まず、第２の関連技術にお
いては、窒素を含む酸化シリコン膜を２層に積層して層
間絶縁膜を構成する。下層の配線を含む表面に第１の関
連技術、第１、第２の実施例のいずれかにより第１層の
窒素を含む酸化シリコン膜を形成した後アルキルアミノ
シランとオゾンを用いる常圧ＣＶＤ法により第２層の窒
素を含有する酸化シリコン膜を形成して第１層の窒素を
含む酸化シリコン膜の上面にできた凹部を充填し、次
に、レジストエッチバック法を用いて表面を平坦化す
る。As a technique related to the present invention, the first related technique
The technology has already been introduced, but here we have a second and third related
The technology is also introduced. First, the second related technology
Then, a silicon oxide film containing nitrogen is laminated in two layers to form an interlayer insulating film. A silicon oxide film containing nitrogen of the first layer is formed on the surface including the wiring of the lower layer according to the first related technique or any of the first and second embodiments, and then a normal pressure CVD method using alkylaminosilane and ozone is performed. A second layer of a silicon oxide film containing nitrogen is formed to fill a concave portion formed on the upper surface of the first layer of a silicon oxide film containing nitrogen, and then the surface is planarized by a resist etch-back method. .
【００２２】図４は、枚葉型常圧ＣＶＤ装置において、
テトラジメチルアミノシラン（Ｓｉ〔Ｎ（ＣＨ3 ）2 〕
4 ）４００ＳＣＣＭ，窒素５ＳＬＭ，温度４００℃の下
でオゾン流量を変化させて形成した窒素を含む酸化シリ
コン膜中の窒素濃度と吸湿水分量を示す図である。FIG. 4 shows a single wafer type normal pressure CVD apparatus.
Tetradimethylaminosilane (Si [N (CH 3 ) 2 ]
4 ) A diagram showing the nitrogen concentration and the amount of moisture absorbed in a nitrogen-containing silicon oxide film formed by changing the ozone flow rate under 400 SCCM, nitrogen 5 SLM, and a temperature of 400 ° C.
【００２３】図４に示すように、プラズマＣＶＤ法の場
合に比較して、吸湿水分量は多いが、従来のテトラエト
キシシランを用いた常圧ＣＶＤ法の場合の３０％に比較
すると、格段に少ない。第２の関連技術におけるオゾン
流量は、４００ＳＣＣＭが適当である。第２の関連技術
では、膜質の緻密なプラズマＣＶＤ法による酸化シリコ
ン膜と、段差被覆性が優れる常圧ＣＶＤ法による酸化シ
リコン膜とを組合せることにより、微細化されたアルミ
合金配線による層間絶縁膜のボイドを防止できる利点が
ある。As shown in FIG. 4, the amount of moisture absorbed is large as compared with the case of the plasma CVD method, but is much higher than that of the conventional atmospheric pressure CVD method using tetraethoxysilane of 30%. Few. An appropriate ozone flow rate in the second related art is 400 SCCM. In the second related art, interlayer insulation using fine aluminum alloy wiring is achieved by combining a silicon oxide film formed by a dense plasma CVD method with a film quality and a silicon oxide film formed by an atmospheric pressure CVD method having excellent step coverage. There is an advantage that voids in the film can be prevented.
【００２４】次に、第３の関連技術は、第２の関連技術
における第２層の窒素を含む酸化シリコン膜をアルキル
アミノ基とアセトキシ基を有するシリコン化合物とオゾ
ンを用いる常圧ＣＶＤ法によって形成するものである。 Next, a third related technique is to form a second layer of a silicon oxide film containing nitrogen in the second related technique by using a silicon compound having an alkylamino group and an acetoxy group and ozone at normal pressure. It is formed by a CVD method.
【００２５】図５は、ジエトキシジジメチルアミノシラ
ン（Ｓｉ〔ＯＣ2 Ｈ5 〕4 〔Ｎ（ＣＨ3 ）2 〕2 ）４０
０ＳＣＣＭ，窒素５ＳＬＭ，温度３８０℃の下で、オゾ
ン流量を変化させて形成した酸化シリコン膜中の窒素濃
度と、水分量を示す図である。FIG. 5 shows diethoxydidimethylaminosilane (Si [OC 2 H 5 ] 4 [N (CH 3 ) 2 ] 2 ) 40.
FIG. 4 is a diagram showing a nitrogen concentration and a water content in a silicon oxide film formed by changing an ozone flow rate under 0 SCCM, 5 SLM of nitrogen, and a temperature of 380 ° C.
【００２６】図５に示すように、第２の関連技術と同様
に、従来例に比べて吸湿水分量が格段に少くできる。As shown in FIG. 5, similarly to the second related art , the amount of moisture absorbed can be significantly reduced as compared with the conventional example.
【００２７】[0027]
【発明の効果】以上説明したように本発明は、酸化シリ
コン膜中に窒素を含有する層間絶縁膜を、アルキルアミ
ノシラン及び酸素を含むガスを用いたプラズマＣＶＤ
法、或いは、アルコキシ基とアルキルアミノ基とを有す
るシリコン化合物及び酸素を含むガスを用いたプラズマ
ＣＶＤ法により堆積させることにより、吸湿水分量を従
来技術に比較して、格段に減少させることが出来る。そ
の結果、パッシベーション膜形成時において、従来技術
で見られたアルミ合金配線の空隙（ボイド）の発生が防
止できるので、エレクトロマイグレーション耐性が格段
に向上し、半導体装置の信頼性を高めることが出来る。As described above, according to the present invention, an interlayer insulating film containing nitrogen in a silicon oxide film is formed by an alkyl amide.
Plasma CVD using gas containing silane and oxygen
Method or having an alkoxy group and an alkylamino group
Using gas containing silicon compound and oxygen
By depositing by the CVD method, the amount of moisture absorbed can be remarkably reduced as compared with the prior art. As a result, at the time of forming the passivation film, it is possible to prevent the generation of voids (voids) in the aluminum alloy wiring as seen in the prior art, so that the electromigration resistance is significantly improved and the reliability of the semiconductor device can be improved.
【００２８】なお、酸化シリコン膜中に、窒素を含有さ
せても、段差被覆性には何ら影響は無く、微細化金属配
線に適用し、問題を生じさせない。It should be noted that even if nitrogen is contained in the silicon oxide film, there is no effect on the step coverage, and the present invention is applied to miniaturized metal wiring and does not cause any problem.
【図１】本発明に関連する第１の関連技術により形成さ
れた酸化シリコン膜中の窒素濃度と吸湿水分量とを示す
図。FIG. 1 is a view showing a nitrogen concentration and a moisture absorption amount in a silicon oxide film formed by a first related technique related to the present invention.
【図２】本発明の第１の実施例により形成された酸化シ
リコン膜中の窒素濃度と吸湿水分量とを示す図。FIG. 2 is a diagram showing a nitrogen concentration and a moisture absorption amount in a silicon oxide film formed according to a first embodiment of the present invention.
【図３】本発明の第２の実施例により形成された酸化シ
リコン膜中の窒素濃度と吸湿水分量とを示す図。FIG. 3 is a view showing a nitrogen concentration and a moisture absorption amount in a silicon oxide film formed according to a second embodiment of the present invention.
【図４】本発明に関連する第２の関連技術により形成さ
れた酸化シリコン膜中の窒素濃度と吸湿水分量とを示す
図。FIG. 4 is a diagram showing a nitrogen concentration and a moisture absorption amount in a silicon oxide film formed by a second related technique related to the present invention.
【図５】本発明に関連する第３の関連技術により形成さ
れた酸化シリコン膜中の窒素濃度と吸湿水分量とを示す
図。FIG. 5 is a diagram showing a nitrogen concentration and a moisture absorption amount in a silicon oxide film formed by a third related technique related to the present invention.
【図６】従来の半導体装置の製造方法の第１の例を説明
するための断面図。FIG. 6 is a sectional view for explaining a first example of a conventional method for manufacturing a semiconductor device.
【図７】従来の半導体装置の製造方法の第２の例を説明
するための断面図。FIG. 7 is a sectional view for explaining a second example of the conventional method for manufacturing a semiconductor device.
【図８】従来の半導体装置の問題点を説明するための平
面図。FIG. 8 is a plan view illustrating a problem of a conventional semiconductor device.
１ 半導体基板 ２，４，７ 酸化シリコン膜 ３，５ アルミニウム合金膜 ６ パッシベーション膜 ８ ボイド DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2,4,7 Silicon oxide film 3,5 Aluminum alloy film 6 Passivation film 8 Void
Claims (2)
面に窒素を含有する酸化シリコン膜を堆積して層間絶縁
膜を形成する工程と、前記層間絶縁膜の上に上層配線を
形成する工程とを含む半導体装置の製造方法において、
前記層間絶縁膜がアルキルアミノシラン及び酸素を含む
ガスを用いたプラズマＣＶＤ法により堆積された窒素を
含有する酸化シリコン膜からなることを特徴とする半導
体装置の製造方法。A step of depositing a silicon oxide film containing nitrogen on a surface including a lower wiring provided on a semiconductor substrate to form an interlayer insulating film; and a step of forming an upper wiring on the interlayer insulating film. And a method for manufacturing a semiconductor device comprising :
The interlayer insulating film contains alkylaminosilane and oxygen
Nitrogen deposited by plasma CVD using gas
A method for manufacturing a semiconductor device, comprising a silicon oxide film .
面に窒素を含有する酸化シリコン膜を堆積して層間絶縁
膜を形成する工程と、前記層間絶縁膜の上に上層配線を
形成する工程とを含む半導体装置の製造方法において、
前記層間絶縁膜がアルコキシ基とアルキルアミノ基とを
有するシリコン化合物及び酸素を含むガスを用いたプラ
ズマＣＶＤ法により堆積された窒素を含有する酸化シリ
コン膜からなることを特徴とする半導体装置の製造方
法。2. A table including a lower wiring provided on a semiconductor substrate.
Interlayer insulation by depositing nitrogen-containing silicon oxide film on the surface
Forming a film, and forming an upper layer wiring on the interlayer insulating film.
Forming a semiconductor device comprising:
A method of manufacturing a semiconductor device, wherein the interlayer insulating film is formed of a silicon compound film containing nitrogen and deposited by a plasma CVD method using a gas containing oxygen and a silicon compound having an alkoxy group and an alkylamino group. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10941692A JP2830604B2 (en) | 1992-04-28 | 1992-04-28 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10941692A JP2830604B2 (en) | 1992-04-28 | 1992-04-28 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05304218A JPH05304218A (en) | 1993-11-16 |
| JP2830604B2 true JP2830604B2 (en) | 1998-12-02 |
Family
ID=14509701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10941692A Expired - Lifetime JP2830604B2 (en) | 1992-04-28 | 1992-04-28 | Method for manufacturing semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP2830604B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4987317B2 (en) * | 2006-02-14 | 2012-07-25 | 株式会社ダイセル | Insulating film forming material and insulating film |
| JP5558142B2 (en) * | 2009-04-14 | 2014-07-23 | 東ソー株式会社 | Diazasilacyclopentene derivative, method for producing the same, and method for producing silicon-containing thin film |
| CA2920646A1 (en) * | 2016-02-12 | 2017-08-12 | Seastar Chemicals Inc. | Organometallic compound and method |
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1992
- 1992-04-28 JP JP10941692A patent/JP2830604B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05304218A (en) | 1993-11-16 |
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