JP2830971B2 - Evaluation method for crystal defects - Google Patents
Evaluation method for crystal defectsInfo
- Publication number
- JP2830971B2 JP2830971B2 JP13272894A JP13272894A JP2830971B2 JP 2830971 B2 JP2830971 B2 JP 2830971B2 JP 13272894 A JP13272894 A JP 13272894A JP 13272894 A JP13272894 A JP 13272894A JP 2830971 B2 JP2830971 B2 JP 2830971B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- measurement
- single crystal
- evaluating
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 23
- 230000007547 defect Effects 0.000 title claims description 13
- 238000011156 evaluation Methods 0.000 title description 4
- 238000005259 measurement Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 36
- 238000005530 etching Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000001739 density measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、シリコン単結晶ウェー
ハ（以下、単にウェーハということがある）表面の結晶
欠陥の評価方法の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method for evaluating crystal defects on the surface of a silicon single crystal wafer (hereinafter sometimes simply referred to as a wafer).
【０００２】[0002]
【関連技術】ウェーハ表面の加工歪層を含む結晶欠陥の
評価方法としては、ウェーハを熱酸化処理後、選択エッ
チング法によりＯＳＦ（Oxidation induced stacking f
ault) 密度の大小によって評価を行っているのが現状で
ある。[Related Art] As a method for evaluating crystal defects including a work-strained layer on a wafer surface, a wafer is subjected to a thermal oxidation treatment and then to an OSF (Oxidation induced stacking f) by a selective etching method.
ault) At present, evaluation is based on the density.
【０００３】この従来方法によれば、例えば、第一工程
で、熱酸化処理（１１００℃、１２０分、ｗｅｔＯ
2 法）を行い、第二工程で、選択エッチング（Ｓｉｒｔ
ｌ：＜１１１＞，Ｓｅｃｃｏ：＜１００＞，３０分）、
第三工程で、顕微鏡測定〔×１０００，３点（中心、半
径／２，周縁から８ｍｍ内側の点）／ウェーハ〕で、こ
の場合、ウェーハ１枚あたり約１０分の測定時間を要し
ている。According to this conventional method, for example, in the first step, a thermal oxidation treatment (1100 ° C., 120 minutes, wet O
2 method), and in the second step, selective etching (Sirt
l: <111>, Secco: <100>, 30 minutes),
In the third step, microscopic measurement (× 1000, 3 points (center, radius / 2, point 8 mm inside from the periphery) / wafer), in this case, a measurement time of about 10 minutes per wafer is required. .
【０００４】この従来方法は、工程数が３工程と複雑
で、選択エッチング液が必要であるという問題の他に、
顕微鏡によりＯＳＦ密度（１ｃｍ2 当たりの欠陥個数）
の測定を目視で行う関係上、測定に時間がかかり多大の
労力が必要であるという問題を有していた。[0004] This conventional method is complicated in that the number of steps is three and requires a selective etching solution.
OSF density by microscope (number of defects per 1 cm 2 )
Due to the fact that the measurement is performed visually, there is a problem that the measurement is time-consuming and requires a great deal of labor.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記した従
来技術の問題点に鑑みてなされたもので、ウェーハ表面
の加工歪を含む結晶欠陥の評価をＯＳＦ密度により行う
際に用いられるＯＳＦ密度の測定にあたり、反射マイク
ロ波法等の非接触式ウェーハライフタイム測定装置を用
いてウェーハライフタイムの測定を行うことにより、選
択エッチング液を必要とする選択エッチング工程、及び
多大の労力を必要とする顕微鏡測定工程が省略でき、選
択エッチング液が不要となる他、測定に必要な工程全体
の時間及び労力が大幅に低減でき、ＯＳＦ密度の測定の
迅速化により、結晶欠陥の評価の簡易化、迅速化を可能
とした結晶欠陥の評価方法を提供することを目的として
いる。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has been made in consideration of the above problem. In the measurement of the wafer, a non-contact type wafer lifetime measurement apparatus such as a reflection microwave method is used to measure the wafer lifetime, thereby requiring a selective etching process requiring a selective etching solution, and a great deal of labor. The microscope measurement process can be omitted, the selective etching solution is not required, and the time and labor of the entire process required for the measurement can be greatly reduced. The quick measurement of the OSF density makes the evaluation of crystal defects simple and quick. It is an object of the present invention to provide a method for evaluating a crystal defect that has been made possible.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、本発明方法は、シリコン単結晶ウェーハの背面及び
／又は表面の複数個の測定箇所におけるウェーハライフ
タイムを測定することによって、シリコン単結晶ウェー
ハのＯＳＦ密度を求め、これにより当該シリコン単結晶
ウェーハの結晶欠陥の評価を行うようにしたものであ
る。In order to solve the above-mentioned problems, a method of the present invention is to measure a silicon single crystal wafer by measuring wafer lifetimes at a plurality of measurement points on the back and / or the surface of the silicon single crystal wafer. The OSF density of the crystal wafer is obtained, and the crystal defects of the silicon single crystal wafer are evaluated based on the OSF density.
【０００７】上記測定箇所が、測定されるウェーハの中
心位置及び半径の中間位置であり、かつ該半径の中間位
置の測定箇所は互いに対称に配置するのが好適である。
この測定箇所は、多い方が測定精度は向上するが、３ヶ
所以上の測定により、実用性のある測定精度が得られ
る。また本発明方法が対象とするＯＳＦ密度の測定範囲
は４００〜１２００×１０3 ／ｃｍ2 が好適である。本
発明におけるウェーハライフタイムの測定手段として
は、反射マイクロ波法等の非接触式ウェーハライフタイ
ム測定装置を用いるのが好ましい。[0007] It is preferable that the measurement point is a center position of the wafer to be measured and an intermediate position of the radius, and the measurement points at the intermediate position of the radius are arranged symmetrically to each other.
The greater the number of measurement points, the higher the measurement accuracy, but practical measurement accuracy can be obtained by measurement at three or more locations. The measurement range of the OSF density targeted by the method of the present invention is preferably from 400 to 1200 × 10 3 / cm 2 . As a means for measuring the wafer lifetime in the present invention, it is preferable to use a non-contact type wafer lifetime measuring device such as a reflection microwave method.
【０００８】[0008]
【作用】本発明方法によれば、例えば、第一工程で、酸
化（１０００℃、６０分、ｗｅｔＯ2 法）を行い、第二
工程で、ウェーハライフタイム測定〔５点（中心１点、
半径／２に十字形で計４点）／ウェーハ〕を行うもので
ある。この場合、ウェーハ面の５点を測定するにも拘ら
ず、ウェーハ１枚あたり５分程度の時間で済む。本発明
方法の工程数は、上記した従来方法に比べて減少してお
り、選択エッチング液が不要となる他、目視による顕微
鏡測定の工程も省略されるから、測定に必要な工程全体
の時間及び労力を大幅に低減することができる。According to the method of the present invention, for example, in the first step, oxidation (1000 ° C., 60 minutes, wetO 2 method) is performed, and in the second step, the wafer lifetime is measured [5 points (one center,
(Total of 4 points in a cross shape with radius / 2) / wafer]. In this case, it takes only about 5 minutes for one wafer, despite measuring five points on the wafer surface. The number of steps of the method of the present invention is reduced as compared with the above-described conventional method, and a selective etching solution is not required, and the step of visual microscopic measurement is also omitted. Labor can be greatly reduced.
【０００９】[0009]
【実施例】以下に実施例を挙げて本発明を具体的に説明
する。EXAMPLES The present invention will be specifically described below with reference to examples.
【００１０】（実験例１） 使用したシリコン半導体ウェーハ： ＣＺ、ｐ型、＜１００＞、１０〜２０Ωｃｍ、１５０ｍ
ｍφ 従来の検査方法により、表１に示したＯＳＦ密度を有す
るとされる５枚のシリコン半導体単結晶ウェーハのサン
プル２組を作成した。これらサンプルは、ウェーハ表面
の重金属汚染物による影響を除くために、ＮＨ4 ＯＨ−
Ｈ2 Ｏ2 （ＳＣ 1 洗浄液）とＨＣＬ−Ｈ2 Ｏ2 （ＳＣ2
洗浄液）で洗浄後、純水で水洗し乾燥させた。(Experimental Example 1) Silicon semiconductor wafer used: CZ, p-type, <100>, 10-20 Ωcm, 150 m
mφ By the conventional inspection method, it has the OSF density shown in Table 1.
Five silicon semiconductor single crystal wafers
Two sets of pulls were made. These samples are
NH to eliminate the effects of heavy metal contaminantsFourOH-
HTwoOTwo(SC 1Cleaning solution) and HCL-HTwoOTwo(SCTwo
(Washing solution), followed by washing with pure water and drying.
【００１１】[0011]
【表１】 [Table 1]
【００１２】５枚ずつ１組のシリコン半導体単結晶ウェ
ーハサンプルについて、下記するような従来法によるＯ
ＳＦ密度測定を行い、もう１組のサンプルについては本
発明で記載の方法によるウェーハライフタイム測定を行
った。A set of five single silicon semiconductor single crystal wafers was prepared by the following conventional method.
SF density measurement was performed, and wafer lifetime measurement was performed on another set of samples by the method described in the present invention.
【００１３】従来法によるＯＳＦ密度の顕微鏡測定 第一工程：酸化（１１００℃、１２０分、ｗｅｔＯ
2 法） 第二工程：選択エッチング（Ｓｅｃｃｏ，３０分） 第三工程：顕微鏡測定〔×１０００，３点（中心、半径
／２、周縁から８ｍｍ内側の点）／ウェーハ〕、この測
定の所要時間は１０分であった。Microscopic Measurement of OSF Density by Conventional Method First Step: Oxidation (1100 ° C., 120 minutes, wet O
2nd method) Second step: Selective etching (Secco, 30 minutes) Third step: Microscopic measurement [× 1000, 3 points (center, radius / 2, point 8 mm inside from the periphery) / wafer], time required for this measurement Was 10 minutes.
【００１４】本発明に記載のウェーハライフタイム測定 第一工程：酸化（１０００℃、６０分、ｗｅｔＯ2 法） 第二工程：ウェーハライフタイム測定〔５点（中心、半
径／２）／ウェーハ背面〕（半径／２の４箇所の測定点
は、十字形で互いに対称位置とし、ウェーハライフタイ
ム値は、その算術平均値とした。）、この測定の所要時
間は５分であった。Wafer lifetime measurement according to the present invention First step: Oxidation (1000 ° C., 60 minutes, wet O 2 method) Second step: Wafer lifetime measurement [5 points (center, radius / 2) / wafer backside] (The four measurement points of radius / 2 were symmetrical to each other in a cross shape, and the wafer lifetime value was the arithmetic average value.) The time required for this measurement was 5 minutes.
【００１５】上記した測定の結果を表２に示すととも
に、図１（縦軸及び横軸ともに普通目盛）及び図２（縦
軸及び横軸ともに対数目盛）に示した。The results of the above measurements are shown in Table 2 and also in FIG. 1 (normal scale on both the vertical and horizontal axes) and FIG. 2 (logarithmic scale on both the vertical and horizontal axes).
【００１６】[0016]
【表２】 [Table 2]
【００１７】上記した測定の結果から、ＯＳＦ密度とウ
ェーハライフタイム値の間には、下記式（Ｉ）に示すよ
うに相関関係（負の相関）が存在し、ウェーハライフタ
イムの測定値を測定することにより、ＯＳＦ密度を求
め、ウェーハの表面歪の評価を行うことが可能なことが
わかった。From the above measurement results, there is a correlation (negative correlation) between the OSF density and the wafer lifetime value as shown in the following formula (I), and the measured value of the wafer lifetime is measured. By doing so, it was found that it was possible to obtain the OSF density and evaluate the surface distortion of the wafer.
【００１８】[0018]
【数１】 ｙ＝９．５８×１０6 ｘ-1.59 ・・・・・・・・・（Ｉ）Y = 9.58 × 10 6 x −1.59 (I)
【００１９】式（Ｉ）中、 ｙ：ウェーハライフタイム値（μｓｅｃ） ｘ：ＯＳＦ密度（ケ／ｃｍ2 ） 相関係数：ｒ＝−０．９７９ である。In the formula (I), y: wafer lifetime value (μsec) x: OSF density (q / cm 2 ) Correlation coefficient: r = −0.979.
【００２０】[0020]
【発明の効果】以上述べたごとく、本発明によれば、Ｏ
ＳＦ密度測定の工程を２工程に減少させるとともに、選
択エッチング液が不要となる上、顕微鏡測定の工程が省
略でき、測定に必要な工程全体の時間と労力を大幅に低
減でき、ＯＳＦ密度の測定の迅速化により、結晶欠陥の
評価を簡易かつ迅速に行うことが可能となる。As described above, according to the present invention, O
In addition to reducing the SF density measurement process to two processes, a selective etching solution is not required, the microscope measurement process can be omitted, the time and labor required for the measurement can be greatly reduced, and the OSF density measurement can be performed. , The evaluation of crystal defects can be performed easily and quickly.
【図１】実験例１におけるＯＳＦ密度の測定値（普通目
盛）とウェーハライフタイムの測定値（普通目盛）との
関係を示す普通目盛グラフである。FIG. 1 is a normal scale graph showing a relationship between a measured value of OSF density (normal scale) and a measured value of wafer lifetime (normal scale) in Experimental Example 1.
【図２】実験例１におけるＯＳＦ密度の測定値（対数目
盛）とウェーハライフタイムの測定値（対数目盛）との
関係を示す対数目盛グラフである。FIG. 2 is a logarithmic scale graph showing a relationship between a measured value of OSF density (log scale) and a measured value of wafer lifetime (log scale) in Experimental Example 1.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−194737（ＪＰ，Ａ) 特開 平５−129404（ＪＰ，Ａ) 特開 平６−56588（ＪＰ，Ａ) 特開 平６−112292（ＪＰ，Ａ) 特開 平６−242036（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/66──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-61-194737 (JP, A) JP-A-5-129404 (JP, A) JP-A-6-56588 (JP, A) JP-A-6-56588 112292 (JP, A) JP-A-6-242036 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) H01L 21/66
Claims (3)
は表面の複数個の測定箇所におけるウェーハライフタイ
ムを測定することによって、シリコン単結晶ウェーハの
ＯＳＦ密度を求め、これにより当該シリコン単結晶ウェ
ーハの結晶欠陥の評価を行うことを特徴とする結晶欠陥
の評価方法。An OSF density of a silicon single crystal wafer is determined by measuring a wafer lifetime at a plurality of measurement points on a back surface and / or a front surface of the silicon single crystal wafer, thereby obtaining a crystal of the silicon single crystal wafer. A method for evaluating a crystal defect, comprising evaluating a defect.
結晶ウェーハの中心位置及び半径の中間位置であり、か
つ該半径の中間位置の測定箇所は互いに対称に配置され
ることを特徴とする請求項１記載の結晶欠陥の評価方
法。2. The method according to claim 1, wherein the measurement points are a center position of the silicon single crystal wafer to be measured and an intermediate position of the radius, and the measurement points at the intermediate positions of the radius are arranged symmetrically to each other. Item 1. The method for evaluating a crystal defect according to Item 1.
０×１０3 ／ｃｍ2 であることを特徴とする請求項１又
は２記載の結晶欠陥の評価方法。3. The measurement range of the OSF density is 400 to 120.
3. The method for evaluating a crystal defect according to claim 1, wherein the crystal defect is 0 × 10 3 / cm 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13272894A JP2830971B2 (en) | 1994-06-15 | 1994-06-15 | Evaluation method for crystal defects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13272894A JP2830971B2 (en) | 1994-06-15 | 1994-06-15 | Evaluation method for crystal defects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07335705A JPH07335705A (en) | 1995-12-22 |
| JP2830971B2 true JP2830971B2 (en) | 1998-12-02 |
Family
ID=15088207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13272894A Expired - Lifetime JP2830971B2 (en) | 1994-06-15 | 1994-06-15 | Evaluation method for crystal defects |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2830971B2 (en) |
-
1994
- 1994-06-15 JP JP13272894A patent/JP2830971B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07335705A (en) | 1995-12-22 |
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