JP2832941B2 - In-plane magnetic recording media - Google Patents
In-plane magnetic recording mediaInfo
- Publication number
- JP2832941B2 JP2832941B2 JP63133550A JP13355088A JP2832941B2 JP 2832941 B2 JP2832941 B2 JP 2832941B2 JP 63133550 A JP63133550 A JP 63133550A JP 13355088 A JP13355088 A JP 13355088A JP 2832941 B2 JP2832941 B2 JP 2832941B2
- Authority
- JP
- Japan
- Prior art keywords
- recording layer
- magnetic recording
- magnetic
- atomic
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011651 chromium Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- -1 hanium Chemical compound 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000001050 lubricating effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000010952 cobalt-chrome Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気記録媒体に関するものであり、詳しく
は、作用の異なる２つの磁気記録層を積層することによ
り、高密度記録時の電磁変換特性に優れた面内磁気記録
媒体を提供するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium, and more particularly, to electromagnetic conversion during high-density recording by stacking two magnetic recording layers having different functions. An object of the present invention is to provide an in-plane magnetic recording medium having excellent characteristics.
磁気記録媒体にといては、近年高記録密度の実現が求
められている。そのためには、磁気記録層をできるだけ
薄くし、保磁力を高くすることで、高密度記録時のS/N
比、分解能を高めることが有効と考えられている。In recent years, realization of high recording density has been demanded for magnetic recording media. To achieve this, the magnetic recording layer is made as thin as possible and the coercive force is increased, so that the S / N at high density recording
It is considered effective to increase the ratio and the resolution.
例えば、コバルト系合金を磁気記録層とする場合、膜
厚を薄くすると、一般に高保磁力を得やすい。しかしな
がら、磁気記録層を薄くして保磁力を高くした場合に
は、出力が得にくくなり、また、保磁力を上げすぎる
と、信号の書き込み及び消去がしにくくなるという問題
も生じてくる。For example, when a cobalt-based alloy is used as the magnetic recording layer, a high coercive force is generally easily obtained when the film thickness is reduced. However, when the coercive force is increased by making the magnetic recording layer thinner, it becomes difficult to obtain an output, and when the coercive force is excessively increased, there arises a problem that it becomes difficult to write and erase signals.
そこで、今後の高密度化への流れを考慮すると、従来
通りの出力を得ながら、高水準のS/N比、分解能を持つ
面内磁気記録媒体の出現が望まれている。In view of the trend toward higher density in the future, the emergence of a longitudinal magnetic recording medium having a high level of S / N ratio and high resolution while obtaining the same output as before is desired.
本発明は、以上の問題点に鑑みなされたもので、再生
出力を損うことなく、かつ高密度記録特性に優れた面内
磁気記録媒体を提供することを目的とする。The present invention has been made in view of the above problems, and an object of the present invention is to provide a longitudinal magnetic recording medium that does not impair reproduction output and has excellent high-density recording characteristics.
本発明は、非磁性基板上にクロムを主成分とする下地
層と、該下地層上にコバルトを主成分とする第１記録層
を設け、さらに該第１記録層の上に、コバルト及びクロ
ムを主成分とし、さらに炭素、チタン、ジルコニウム、
ニオブ、ホウミウム、ハフニウム、タンタル及びタング
ステンよりなる群から選ばれた少なくとも１種類の元素
を含有してなる第２記録層を設けたことを特徴とする面
内磁気記録媒体である。The present invention provides an underlayer comprising chromium as a main component on a nonmagnetic substrate, a first recording layer comprising cobalt as a main component on the underlayer, and further comprising cobalt and chromium on the first recording layer. With carbon, titanium, zirconium,
An in-plane magnetic recording medium provided with a second recording layer containing at least one element selected from the group consisting of niobium, holmium, hafnium, tantalum, and tungsten.
以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
本発明は非磁性基板上に特定の磁性層を設けたもので
ある。基板としては、アルミニウム合金、ガラス、樹脂
等が用いられ、実用的にはアルミニウム合金が望まし
い。アルミニウム合金基板は、基板上に公知の無電解メ
ッキ法により、NiP皮膜を20μｍ〜25μｍの膜厚に成膜
した基板表面を機械研摩により、Ra（中心線平均粗さ）
で20Å〜30Åに仕上げるのが望ましい。In the present invention, a specific magnetic layer is provided on a non-magnetic substrate. As the substrate, an aluminum alloy, glass, resin or the like is used, and practically, an aluminum alloy is desirable. The aluminum alloy substrate is Ra (center line average roughness) by mechanically polishing the substrate surface on which a NiP film is formed to a thickness of 20 to 25 μm on the substrate by a known electroless plating method.
It is desirable to finish with 20Å to 30Å.
特に本発明では、磁気記録層の結晶性を良くするため
に、基板上にクロムを含む下地層を500Å〜10000Å、好
ましくは1000Å〜5000Åの膜厚で成膜するのが望まし
い。In particular, in the present invention, in order to improve the crystallinity of the magnetic recording layer, it is desirable to form a base layer containing chromium on the substrate to a thickness of 500 to 10,000, preferably 1,000 to 5,000.
成膜は、通常行われているスパッタリング法、真空蒸
着法、イオンプレーティング法、メッキ法により行われ
る。例えば、スパンタリング法の場合は、直流スパッタ
リング装置又は交流式スパッタリング装置を使用して行
い、基板を装着した装置内を予め１×10-5torr以下に排
気した後スパッタリング用ガスとしてアルゴンを分圧３
×10-3〜４×10-2torr装入し、基板を室温から300℃ま
での範囲で加熱する。ターゲットはクロムを主成分とし
たものであり、他の金属を０〜50原子％含んでいてもよ
い。The film is formed by a usual sputtering method, vacuum deposition method, ion plating method, and plating method. For example, in the case of the spattering method, a direct current sputtering device or an alternating current sputtering device is used, and the inside of the device on which the substrate is mounted is evacuated to 1 × 10 −5 torr or less in advance, and then argon is subjected to partial pressure as a sputtering gas. 3
× 10 -3 to 4 × 10 -2 torr are charged, and the substrate is heated from room temperature to 300 ° C. The target is mainly composed of chromium, and may contain 0 to 50 atomic% of another metal.
次に該下地層の上に第１の磁気記録層を下地層の成膜
と同じ方法を用いて50Å〜1000Å好ましくは100Å〜600
Å、更に好ましくは200Å〜400Åの膜厚で成膜する。第
１の磁気記録層はコバルトを主成分としたものである
が、好ましくは、さらにリン、クロム、ニッケル、イッ
トリウム、タングステン、白金、ランタン、セリウム、
プラセオジム、ネオジム、プロメチウムおよびサマリウ
ムよりなる群から選ばれた少なくとも１種類の元素を含
有して構成される。特に好ましくは、コバルトを60〜90
原子％、ニッケルを10〜40原子％、クロムを５〜10原子
％含有するものがよい。Next, a first magnetic recording layer is formed on the underlayer by using the same method as that for forming the underlayer, from 50 ° to 1000 °, preferably from 100 ° to 600 °.
Å, and more preferably, a film having a thickness of 200 to 400 膜厚. The first magnetic recording layer is mainly composed of cobalt. Preferably, the first magnetic recording layer further contains phosphorus, chromium, nickel, yttrium, tungsten, platinum, lanthanum, cerium,
It comprises at least one element selected from the group consisting of praseodymium, neodymium, promethium and samarium. Particularly preferably, cobalt is 60 to 90.
Atomic%, 10 to 40 atomic% of nickel and 5 to 10 atomic% of chromium are preferred.
第１の記録層は、十分な保磁力を有し、なおかつ良好
な再生出力を得るのに寄与する。The first recording layer has a sufficient coercive force and contributes to obtaining a good reproduction output.
次に、該第１の記録層の上に第２の記録層を、第１の
記録層の成膜と同じ方法を用いて50Å〜1000Å、好まし
くは100Å〜600Å、更に好ましくは200Å〜400Åの膜厚
で成膜する。第２の記録層はコバルトおよびクロムを主
成分とし、さらに炭素、チタン、ジルコトニウム、ニオ
ブ、ホルミウム、ハフニウム、タンタルおよびタングス
テンよりなる群から選ばれた少なくとも１種類の元素を
含有するものである。好ましくは、コバルトを70〜90原
子％、クロムを10〜30原子％、添加元素を１〜５原子％
含有するものがよい。Next, a second recording layer is formed on the first recording layer by using the same method as the film formation of the first recording layer, from 50 ° to 1000 °, preferably from 100 ° to 600 °, more preferably from 200 ° to 400 °. The film is formed to have a thickness. The second recording layer contains cobalt and chromium as main components, and further contains at least one element selected from the group consisting of carbon, titanium, zirconium, niobium, holmium, hafnium, tantalum, and tungsten. Preferably, 70 to 90 atomic% of cobalt, 10 to 30 atomic% of chromium, and 1 to 5 atomic% of an additional element
What is contained is good.
添加元素は、コバルト−クロム系の垂直方向への結晶
性及び磁気異方性を高めるものと考えられ、従って添加
元素を加えた場合、コバルト−クロムのみの場合に比較
して垂直異方性エネルギーが大きくなる。第２の記録層
は、主に記録ヘッドの記録磁界の垂直方向成分にあわせ
て磁化し、記録磁界を有効に磁化するのに寄与するもの
と考えられる。The additive element is considered to enhance the crystallinity and magnetic anisotropy in the vertical direction of the cobalt-chromium system. Therefore, when the additive element is added, the perpendicular anisotropy energy is increased as compared with the case of only cobalt-chromium. Becomes larger. It is considered that the second recording layer is magnetized mainly in accordance with the vertical component of the recording magnetic field of the recording head, and contributes to effectively magnetizing the recording magnetic field.
第１記録層及び第２記録層の膜厚の比は、磁気記録層
の総厚みによっても異なるが、総厚みが最適厚さの500
〜1000Åの場合には、第１記録層対第２記録層で1:3〜
3:1、好ましくは1:2〜2:1とすると、重ね書き特性（O/
W）、分解能（RES）、信号雑音比（S/N比）に優れた磁
気記録体が得られる。The ratio of the thickness of the first recording layer to the thickness of the second recording layer varies depending on the total thickness of the magnetic recording layer.
In the case of ~ 1000Å, the first recording layer vs. the second recording layer is 1: 3 ~
3: 1, preferably 1: 2 to 2: 1, the overwriting characteristics (O /
W), a resolution (RES) and a signal-to-noise ratio (S / N ratio) are excellent.
尚、第２記録層の上には、通常、公知の方法に従って
カーボン等よりなる保護潤滑層が設けられる。Incidentally, a protective lubricating layer made of carbon or the like is usually provided on the second recording layer according to a known method.
以下、本発明を実施例により説明するが、本発明はそ
の要旨を越えない限り実施例により限定さるものではな
い。Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to the examples unless it exceeds the gist.
実施例１ 非磁性基板として3.5インチのアルミニウム合金製デ
ィスクを使用し、表面にNi−Ｐメッキ及びテキスチャー
を施して非磁性平滑層を形成した。この上に直流スパッ
タリング装置により下地層、磁気記録層をアルゴン雰囲
気下、次の条件で連続スパッタした。Example 1 A 3.5-inch aluminum alloy disk was used as a non-magnetic substrate, and the surface was subjected to Ni-P plating and texture to form a non-magnetic smooth layer. An underlayer and a magnetic recording layer were continuously sputtered thereon under the following conditions in an argon atmosphere by a DC sputtering apparatus.
初期排気 3.0×10-6torr アルゴン分圧 １×10-2torr 基板温度 室温 下地層用ターゲット Cr（純度99.9％以上） 第１記録層用ターゲット Co62.5原子％−Ni30原子％−
Cr7.5原子％ 第２記録層用ターゲット Co82.5原子％−Cr15原子％−
Ta2.5原子％ 下地層膜厚 約2000Å 第１記録層膜厚 約300Å 第２記録層膜厚 約300Å また最表層に膜厚約400Åのカーボン膜からなる保護
潤滑層を設けた。Initial evacuation 3.0 × 10 -6 torr Argon partial pressure 1 × 10 -2 torr Substrate temperature Room temperature Underlayer target Cr (purity 99.9% or more) First recording layer target Co62.5 atomic%-Ni 30 atomic%-
Cr 7.5 atomic% Target for the second recording layer Co 82.5 atomic%-Cr 15 atomic%-
Ta2.5 atomic% Underlayer thickness about 2000Å First recording layer thickness about 300Å Second recording layer thickness about 300Å A protective lubricating layer made of a carbon film with a thickness of about 400Å was provided on the outermost layer.
こうして作成した磁気記録媒体の磁気特性を測定した
ところ、面内保磁力800Oeを得、また飽和磁化量、その
他の磁気特性に関しても優れた結果を得た。更に電磁変
換特性試験を行った結果、S/N比34dB、O/W−35dB、RES
（1.25/2.50MHz）75％の優れた特性が得られた。When the magnetic characteristics of the magnetic recording medium thus prepared were measured, an in-plane coercive force of 800 Oe was obtained, and excellent results were also obtained with respect to the saturation magnetization and other magnetic characteristics. Furthermore, as a result of conducting an electromagnetic conversion characteristic test, the S / N ratio was 34 dB, O / W-35 dB, RES
(1.25 / 2.50 MHz) Excellent characteristics of 75% were obtained.
実施例２ 第１記録層の膜厚を約200Å、第２記録層の膜厚を約4
00Åとしたこと以外は実施例１と同様にして磁気記録媒
体を作成した。この磁気記録媒体の磁気記録媒体の磁気
特性を測定したところ、面内保磁力850Oeを得、飽和磁
化量その他の磁気特性も優れた結果が得られた。更に、
電磁変換特性試験を行った結果、S/N比35dB、O/W−38d
B、RES（1.25/2.50MHz）83％といった極めて優れた特性
が得られた。Example 2 The thickness of the first recording layer was about 200 ° and the thickness of the second recording layer was about 4
A magnetic recording medium was prepared in the same manner as in Example 1 except that the angle was set to 00 °. When the magnetic properties of the magnetic recording medium of this magnetic recording medium were measured, an in-plane coercive force of 850 Oe was obtained, and a result with excellent saturation magnetization and other magnetic properties was obtained. Furthermore,
As a result of conducting an electromagnetic conversion characteristic test, the S / N ratio was 35 dB and the O / W-38d
Very excellent characteristics such as B, RES (1.25 / 2.50 MHz) 83% were obtained.
実施例３ 第２記録層としてCo 82.5原子％−Cr 15原子％−Nb
2.5原子％からなる層を約300Åの膜厚で形成したこと以
外は実施例１と同様にして磁気記録媒体を形成した。こ
の磁気記録媒体の磁気特性を測定したところ、面内保磁
力850Oeを得、飽和磁化の大きさその他の磁気特性も優
れた結果が得られた。Example 3 Co 82.5 atomic% -Cr 15 atomic% -Nb as the second recording layer
A magnetic recording medium was formed in the same manner as in Example 1 except that a layer consisting of 2.5 atomic% was formed with a thickness of about 300 °. When the magnetic properties of the magnetic recording medium were measured, an in-plane coercive force of 850 Oe was obtained, and the results of the magnitude of the saturation magnetization and other excellent magnetic properties were obtained.
更に、電磁変換特性試験を行った結果、S/N比36dB、O
/W−38dB、RES（1.25/2.50MHz）85％といった極めて優
れた測定結果が得られた。Furthermore, as a result of conducting an electromagnetic conversion characteristic test, the S / N ratio was 36 dB, and O
Very excellent measurement results such as / W-38 dB and RES (1.25 / 2.50 MHz) 85% were obtained.
比較例１ 非磁性基板として3.5インチのアルミニウム合金製デ
ィクスを使用し、表面にNi−Ｐメッキ及びテキスチャー
を施して非磁性平滑層を形成した。この上に直流スパッ
タリング装置により下地層、磁気記録層をアルゴン雰囲
気下の、次の条件で連続スパッタした。Comparative Example 1 A 3.5-inch aluminum alloy disk was used as a nonmagnetic substrate, and the surface was subjected to Ni-P plating and texture to form a nonmagnetic smooth layer. An underlayer and a magnetic recording layer were continuously sputtered thereon under the following conditions in an argon atmosphere by a DC sputtering apparatus.
初期排気 3.0×10-6torr アルゴン分圧 １×10-2torr 基板温度 室温 下地層用ターゲット Cr（純度99.9％以上） 磁気記録層用ターゲット Co62.5原子％−Ni30原子％−
Cr7.5原子％ 下地層膜厚 約2000Å 磁気記録層膜厚 約600Å また、最表層に膜厚約400Åのカーボン膜からなる保
護潤滑層を設けた。Initial evacuation 3.0 × 10 -6 torr Argon partial pressure 1 × 10 -2 torr Substrate temperature Room temperature Underlayer target Cr (purity 99.9% or more) Magnetic recording layer target Co62.5 atomic%-Ni 30 atomic%-
Cr 7.5 atomic% Underlayer film thickness Approximately 2000 Å Magnetic recording layer film thickness Approx.
このようにして形成した磁気記録媒体の磁気特性は、
面内保磁力が900Oeであり、飽和磁化量は実施例と同等
であった。続いて電磁変換特性を測定したところ、S/N
比32dB、RES70％（1.25/2.50MHz）であり、いずれも本
発明の実施例に比較して劣っていた。The magnetic characteristics of the magnetic recording medium thus formed are as follows.
The in-plane coercive force was 900 Oe, and the saturation magnetization was equivalent to that of the example. Next, when the electromagnetic conversion characteristics were measured, the S / N
The ratio was 32 dB and the RES was 70% (1.25 / 2.50 MHz), all of which were inferior to the examples of the present invention.
比較例２ 第１記録層としてCo 82.5原子％−Cr 15原子％−Ta
2.5原子％からなる層を、第２記録層としてCo62.5原子
％−Ni30原子％−Cr7.5原子％からなる層を形成したこ
と以外は実施例１と同様にして磁気記録媒体を形成し
た。このようにして形成した磁気記録媒体の磁気特性
は、面内保持力800Oeであった。続いて電磁変換特性を
測定したところ、S/N比28dB、O/W−30dB、RES50％（1.2
5/2.50MHz）であり、いずれも本発明の実施例に比較し
て劣っていた。Comparative Example 2 Co 82.5 atomic% -Cr 15 atomic% -Ta as the first recording layer
A magnetic recording medium was formed in the same manner as in Example 1, except that a layer composed of 2.5 atomic% and a layer composed of Co 62.5 atomic% -Ni 30 atomic% -Cr 7.5 atomic% were formed as the second recording layer. . The magnetic characteristics of the magnetic recording medium thus formed were an in-plane holding force of 800 Oe. Subsequently, when the electromagnetic conversion characteristics were measured, the S / N ratio was 28 dB, the O / W was −30 dB, and the RES was 50% (1.2%).
5 / 2.50 MHz), which were inferior to the examples of the present invention.
本発明は作用の異なる２つの磁気記録層を設けること
により、高密度記録時の電磁変換特性に優れた磁気記録
媒体を提供することができる。The present invention can provide a magnetic recording medium having excellent electromagnetic conversion characteristics at the time of high density recording by providing two magnetic recording layers having different functions.
第１図は本発明の一実施例を示す磁気記録媒体の部分断
面図、第２図は従来の磁気記録媒体の一例の部分断面図
である。第１図および第２図において、１は非磁性基
板、２は非磁性平滑層、３は非磁性金属下地層、４は第
１記録層、５は第２記録層、６は保護潤滑層、７は磁気
記録層をそれぞれ示す。FIG. 1 is a partial sectional view of a magnetic recording medium showing one embodiment of the present invention, and FIG. 2 is a partial sectional view of an example of a conventional magnetic recording medium. 1 and 2, 1 is a non-magnetic substrate, 2 is a non-magnetic smooth layer, 3 is a non-magnetic metal base layer, 4 is a first recording layer, 5 is a second recording layer, 6 is a protective lubricating layer, Reference numeral 7 denotes a magnetic recording layer.
フロントページの続き (56)参考文献 特開 昭63−237209（ＪＰ，Ａ) 特開 昭61−224105（ＪＰ，Ａ) 特開 昭63−32720（ＪＰ，Ａ) 特開 昭60−101709（ＪＰ，Ａ) 特開 昭62−204429（ＪＰ，Ａ) 特開 昭62−236123（ＪＰ，Ａ) 特開 昭63−102026（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) G11B 5/62 - 5/82 C23C 28/00 - 30/00Continuation of the front page (56) References JP-A-63-237209 (JP, A) JP-A-61-224105 (JP, A) JP-A-63-32720 (JP, A) JP-A-60-101709 (JP, A) , A) JP-A-62-204429 (JP, A) JP-A-62-236123 (JP, A) JP-A-63-102026 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB G11B 5/62-5/82 C23C 28/00-30/00
Claims (1)
層と、該下地層上にコバルトを主成分とする第１記録層
を設け、さらに該第１記録層の上に、コバルト及びクロ
ムを主成分とし、さらに炭素、チタン、ジルコニウム、
ニオブ、ホウミウム、ハウニウム、タンタル及びタング
ステンよりなる群から選ばれた少なくとも１種類の元素
を含有してなる第２記録層を設けたことを特徴とする面
内磁気記録媒体。An underlayer containing chromium as a main component on a nonmagnetic substrate, a first recording layer containing cobalt as a main component on the underlayer, and cobalt and cobalt on the first recording layer. Chromium as the main component, carbon, titanium, zirconium,
An in-plane magnetic recording medium, comprising a second recording layer containing at least one element selected from the group consisting of niobium, holmium, hanium, tantalum, and tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133550A JP2832941B2 (en) | 1988-05-31 | 1988-05-31 | In-plane magnetic recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133550A JP2832941B2 (en) | 1988-05-31 | 1988-05-31 | In-plane magnetic recording media |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01303624A JPH01303624A (en) | 1989-12-07 |
| JP2832941B2 true JP2832941B2 (en) | 1998-12-09 |
Family
ID=15107435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63133550A Expired - Lifetime JP2832941B2 (en) | 1988-05-31 | 1988-05-31 | In-plane magnetic recording media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2832941B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6623873B1 (en) | 1998-11-20 | 2003-09-23 | Hitachi, Ltd. | Magnetic recording medium and magnetic disk apparatus using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60101709A (en) * | 1983-11-05 | 1985-06-05 | Alps Electric Co Ltd | Vertical magnetic recording medium |
| JPH0642282B2 (en) * | 1985-12-24 | 1994-06-01 | 日本ビクター株式会社 | Perpendicular magnetic recording / reproducing method |
| JPS6332720A (en) * | 1986-07-28 | 1988-02-12 | Toshiba Corp | Magnetic recording medium |
| JPS63237209A (en) * | 1987-03-24 | 1988-10-03 | Ube Ind Ltd | perpendicular magnetic recording medium |
-
1988
- 1988-05-31 JP JP63133550A patent/JP2832941B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01303624A (en) | 1989-12-07 |
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