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JP2841926B2 - Resin sealing device for integrated circuits - Google Patents
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JP2841926B2 - Resin sealing device for integrated circuits - Google Patents

Resin sealing device for integrated circuits

Info

Publication number
JP2841926B2
JP2841926B2 JP14054991A JP14054991A JP2841926B2 JP 2841926 B2 JP2841926 B2 JP 2841926B2 JP 14054991 A JP14054991 A JP 14054991A JP 14054991 A JP14054991 A JP 14054991A JP 2841926 B2 JP2841926 B2 JP 2841926B2
Authority
JP
Japan
Prior art keywords
resin
island
lead frame
semiconductor element
push
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP14054991A
Other languages
Japanese (ja)
Other versions
JPH04365338A (en
Inventor
利男 込山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP14054991A priority Critical patent/JP2841926B2/en
Publication of JPH04365338A publication Critical patent/JPH04365338A/en
Application granted granted Critical
Publication of JP2841926B2 publication Critical patent/JP2841926B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は集積回路の樹脂封止装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin sealing device for an integrated circuit.

【0002】[0002]

【従来の技術】従来の樹脂封止装置による集積回路の樹
脂封止方法を図3を用いて説明する。まず図3(a)に
示すように、半導体素子5をリードフレーム1のアイラ
ンド2に接着剤6にて固定し、金属細線4により半導体
素子5とにインナーリード3とを電気的に接続したリー
ドフレーム1を、約140〜180℃に昇温した上型8
Aと下型8Bの間にはさむように装填し、予備加熱をす
る。さらに、樹脂封止前のアイランド2および半導体素
子5は図3(b)に示すようにリードフレーム1および
インナーリード3を介して熱伝導により加熱される。次
に封止用の樹脂タブレット10を下型8Bに設けられた
ポット14に挿入し、プランジャ9を上昇させ加圧する
と、樹脂タブレット10は約140〜180℃の熱によ
り下型8Bに接触している部分から溶融を始める。
2. Description of the Related Art A resin sealing method for an integrated circuit using a conventional resin sealing apparatus will be described with reference to FIG. First, as shown in FIG. 3A, a lead in which a semiconductor element 5 is fixed to an island 2 of a lead frame 1 with an adhesive 6 and an inner lead 3 is electrically connected to the semiconductor element 5 by a thin metal wire 4. The upper mold 8 in which the temperature of the frame 1 is raised to about 140 to 180 ° C.
A and the lower mold 8B are loaded so as to be sandwiched between them, and preheated. Further, the island 2 and the semiconductor element 5 before the resin sealing are heated by heat conduction through the lead frame 1 and the inner leads 3 as shown in FIG. Next, the resin tablet 10 for sealing is inserted into the pot 14 provided in the lower mold 8B, and the plunger 9 is raised and pressurized. Start melting from the part where it is.

【0003】そして図3(c)に示すように、溶融した
流動樹脂10Aはランナ11およびゲート12を通って
上型及び下型キャビティ13A,13Bに流入し、最終
的に完全に充填される。このとき溶融した流動樹脂10
Aは熱硬化型のため一定時間後に硬化する。さらに上型
8Aおよび下型8Bが上下に開き、そして硬化した封止
樹脂10Bの表面を突き上げピン7Aで押すことにより
上型および下型キャビティ13A,13Bと、樹脂封止
された集積回路が分離される。
As shown in FIG. 3C, the molten fluid resin 10A flows into the upper and lower cavities 13A and 13B through the runner 11 and the gate 12, and is finally completely filled. The molten resin 10 melted at this time
Since A is a thermosetting type, it cures after a certain time. Further, the upper die 8A and the lower die 8B are opened up and down, and the upper and lower mold cavities 13A and 13B are separated from the resin-sealed integrated circuit by pushing the surface of the cured sealing resin 10B with the push-up pins 7A. Is done.

【0004】[0004]

【発明が解決しようとする課題】しかし、上述した従来
の樹脂封止装置を用いる集積回路の樹脂封止方法では、
図3(a),(b)に示したように、リードフレーム1
は上型8A及び下型8Bの表面温度約140〜180℃
で直接加熱される。一方のアイランド2および半導体素
子5は中空状態のキャビティ中での間接加熱である。こ
のため予備加熱から封止後における半導体素子5のD点
及びリードフレーム1のC点における温度は、図4に示
すものとなり、温度差ΔTは大きなものとなる。よって
リードフレーム1の材質による熱膨張係数αおよび長さ
lに比例したそり(機械歪)Δdが図3(b)に示すよ
うに生ずる。
However, in the resin sealing method for an integrated circuit using the above-described conventional resin sealing device,
As shown in FIGS. 3A and 3B, the lead frame 1
Is the surface temperature of the upper mold 8A and the lower mold 8B of about 140 to 180 ° C.
Directly heated. The island 2 and the semiconductor element 5 are indirectly heated in a hollow cavity. Therefore, the temperatures at the point D of the semiconductor element 5 and the point C of the lead frame 1 after the preheating and sealing are as shown in FIG. 4, and the temperature difference ΔT is large. Therefore, a warp (mechanical strain) Δd proportional to the coefficient of thermal expansion α and the length 1 due to the material of the lead frame 1 is generated as shown in FIG.

【0005】さらにリードフレーム1としては、熱膨張
係数αが約16×10-61/℃と42合金に比べ約4倍
の銅合金が熱伝導および価格の関係で推奨されているた
め、そりΔdは大きくなる傾向にある。また最近の集積
回路は多ピンかつ大型化に伴ない、ピン数も100〜3
00ピンとなっているため金属細線4の変形および断線
が起きやすくなっている。さらに半導体素子5の面積は
約100〜200mm2 と大型化となり、アイランド2
のそりΔdにより機械応力が半導体素子5に加わりクラ
ック等が生じやすくなっている。
Further, as the lead frame 1, a copper alloy having a thermal expansion coefficient α of about 16 × 10 -6 1 / ° C., which is about four times as large as that of the 42 alloy, is recommended in terms of heat conduction and price. Δd tends to increase. Further, recent integrated circuits have a large number of pins and a large number of pins, and the number of pins is 100 to 3 as well.
Because of the 00 pins, deformation and disconnection of the thin metal wire 4 are likely to occur. Further, the area of the semiconductor element 5 is increased to about 100 to 200 mm 2 ,
Due to the warp Δd, a mechanical stress is applied to the semiconductor element 5 and cracks and the like are easily generated.

【0006】またアイランド2のそりΔdのままの状態
で樹脂封止されると、封止樹脂10Bの外形がそり、外
部端子(図示せず)が変形しコプラナリティ不良等の問
題が発生するとともに、アイランド2のそりΔdにより
流動樹脂の樹脂バランスが悪くなり、安定した成形条件
とならずボイド等の不具合も発生するという問題があっ
た。さらに完全に硬化していない封止樹脂16を先端が
小面積の突き上げピン7Aで押すので、内部に大きな機
械応力が加わり、半導体素子5にクラック等を発生させ
ることもある。
Further, if the island 2 is sealed with resin while keeping its warp Δd, the outer shape of the sealing resin 10B is warped, and external terminals (not shown) are deformed, causing problems such as poor coplanarity. Due to the warp Δd of the island 2, the resin balance of the fluid resin is deteriorated, and there is a problem that stable molding conditions are not obtained and defects such as voids occur. Furthermore, since the tip of the sealing resin 16 that has not been completely cured is pushed by the push-up pin 7A having a small area, a large mechanical stress is applied to the inside, and a crack or the like may be generated in the semiconductor element 5.

【0007】[0007]

【課題を解決するための手段】本発明の集積回路の樹脂
封止装置は、下面に上型キャビティが設けられた上型
と、上面に設けられたランナーとゲートと下型キャビテ
ィとこの下型キャビティを貫通して上下動可能に設けら
れた突き上げピンとを有する下型とからなる集積回路の
樹脂封止装置において、前記突き上げピンはその上面が
リードフレームのアイランドの下面全体に接する大きさ
に形成されているものである。
According to the present invention, there is provided an integrated circuit resin sealing apparatus comprising: an upper mold having an upper mold cavity provided on a lower surface; a runner, a gate, a lower mold cavity provided on an upper surface; And a lower die having a push-up pin provided to be vertically movable through the cavity, wherein the push-up pin is formed in such a size that its upper surface is in contact with the entire lower surface of the island of the lead frame. Is what is being done.

【0008】[0008]

【実施例】次に本発明について図面を参照して説明す
る。図1(a),(b)は本発明の一実施例の断面図で
あり、特に樹脂封止工程順に示してある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIGS. 1A and 1B are cross-sectional views of an embodiment of the present invention, particularly showing the order of the resin sealing steps.

【0009】図1(a)において、上型8Aは従来のも
のと同一であり、その下面には上型キャビティ13Aが
設けられている。下型8Bの表面にはランナ11とゲー
ト12及び下型キャビティ13Bが設けられている。そ
して特に、下型キャビティ13Bの中央部を貫通し上下
可動に設けられた突き上げピン7は、その上面がリード
フレーム1のアイランド2の下面全体に接する大きさに
形成されている。以下樹脂封止方法と共に更に説明す
る。
In FIG. 1A, an upper die 8A is the same as the conventional one, and an upper die cavity 13A is provided on the lower surface thereof. A runner 11, a gate 12, and a lower mold cavity 13B are provided on the surface of the lower mold 8B. In particular, the push-up pin 7 piercing through the center of the lower mold cavity 13B and vertically movable is formed in such a size that its upper surface is in contact with the entire lower surface of the island 2 of the lead frame 1. This will be further described below together with the resin sealing method.

【0010】アイランド2上に半導体素子5を接着剤6
で固定し、金属細線4により半導体素子5とインナーリ
ード3とを電気的に接続したリードフレーム1を、図1
(a)に示すように、アイランド2と面接触する位置に
下型13Bの突き上げピン7を突出させ、約140〜1
80℃に予備加熱して昇温させたそれぞれの面上にのせ
る。さらに約140〜180℃に昇温している上型8A
ではさむように装填する。この時点でリードフレーム1
とアイランド2および半導体素子5とはほぼ均一に加熱
されるため、リードフレームのA点および半導体素子の
B点における温度は図2に示すようになり、その温度差
ΔTを小さくできる。したがってリードフレーム1のそ
りも小さくなる。次に樹脂封止前に突出している突き上
げピン7を下型キャビティ13Bの底まで下降させたの
ち、樹脂タブレット10を下型8Bに設けられたポット
14に挿入する。
A semiconductor element 5 is applied on the island 2 with an adhesive 6
The lead frame 1 in which the semiconductor element 5 and the inner lead 3 are electrically connected by the thin metal wire 4 is
As shown in (a), the push-up pin 7 of the lower mold 13B is projected at a position where the lower mold 13B comes into surface contact with the island 2 so that about 140 to 1
Place on each surface which was preheated to 80 ° C. and heated. Upper die 8A, which is heated to about 140-180 ° C
Then load it so as to sandwich it. At this time lead frame 1
And the island 2 and the semiconductor element 5 are heated substantially uniformly, so that the temperatures at the point A of the lead frame and the point B of the semiconductor element are as shown in FIG. 2, and the temperature difference ΔT can be reduced. Therefore, the warpage of the lead frame 1 is also reduced. Next, after lowering the push-up pin 7 protruding before resin sealing to the bottom of the lower mold cavity 13B, the resin tablet 10 is inserted into the pot 14 provided in the lower mold 8B.

【0011】次で図1(b)に示すように、プランジャ
9を上昇させて加圧すると、樹脂タブレット10は約1
40〜180℃の熱により下型8Bに接触している部分
から溶融を始める。さらに溶融した流動樹脂10Aはラ
ンナ11およびゲート12を通って下型キャビティ13
Bに流入し、最終的に完全に充填される。この場合アイ
ランド2のそり(機械歪)が小さいので流動樹脂10A
の樹脂バランスが良くなり安定した成形条件となる。ま
た硬化した封止樹脂10Bは、先端が広い面積の突き上
げピン7で突き上げられるため、内部に機械応力がかか
らないように下型キャビティ13Bと容易に分離でき
る。
Next, as shown in FIG. 1B, when the plunger 9 is raised and pressurized, the resin tablet 10
The melting is started from the portion in contact with the lower mold 8B by the heat of 40 to 180 ° C. Further, the melted fluid resin 10A passes through the runner 11 and the gate 12 to form the lower mold cavity 13.
B and is finally completely filled. In this case, since the warp (mechanical strain) of the island 2 is small, the flow resin 10A
And the molding conditions become stable. In addition, the cured sealing resin 10B can be easily separated from the lower mold cavity 13B so that the tip is pushed up by the push-up pin 7 having a large area so that no mechanical stress is applied to the inside.

【0012】[0012]

【発明の効果】以上説明したように本発明は、下型の突
き上げピンの上面をアイランドの下面全体に接する大き
さに形成することにより、突き上げピンによりアイラン
ドが直接加熱されるため、リードフレームとアイランド
および半導体素子との温度差が小さくなるため、リード
フレームやアイランドのそりも小さくなる。よって金属
細線中の変形および断線が防止されると共に半導体素子
に発生するクラックを防止できるという効果がある。さ
らにリードフレームを樹脂封止用の金型にセットすると
きの振動による金属細線の変形および断線を防止できる
効果もある。
As described above, according to the present invention, the island is directly heated by the push-up pin by forming the upper surface of the lower push-up pin so as to be in contact with the entire lower surface of the island. Since the temperature difference between the island and the semiconductor element is reduced, the warpage of the lead frame or the island is also reduced. Therefore, there is an effect that deformation and disconnection in the thin metal wire can be prevented and cracks generated in the semiconductor element can be prevented. Further, there is an effect that deformation and disconnection of the thin metal wire due to vibration when setting the lead frame in the resin sealing mold can be prevented.

【0013】また、アイランドのそりが小さくなり、流
動樹脂が安定して流れるため、ボイド不具合が低減でき
ると共に、樹脂封止の外形のそりも小さくなり外部端子
のコプラナリティも良好となる。さらに完全に硬化して
ない封止樹脂をキャビティより分離するとき、封止樹脂
の表面を従来より大幅に広い面積を有する突き上げピン
で押しながら分離作業をするため、突き上げピンによる
機械応力が小さくなる。よって半導体素子のクラック等
を防止できる効果もある。
Further, since the warpage of the island is reduced and the flowing resin flows stably, void defects can be reduced, and the warp of the outer shape of the resin seal is reduced, and the coplanarity of the external terminals is improved. Furthermore, when separating the sealing resin that has not been completely cured from the cavity, the separation resin is pressed while the surface of the sealing resin is pressed with a push-up pin having a much larger area than before, so that the mechanical stress due to the push-up pin is reduced. . Therefore, there is also an effect that a crack or the like of the semiconductor element can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の断面図。FIG. 1 is a sectional view of one embodiment of the present invention.

【図2】実施例によるリードフレームと半導体素子の温
度上昇を示す図。
FIG. 2 is a diagram showing a rise in temperature of a lead frame and a semiconductor element according to an embodiment.

【図3】従来の樹脂封止装置の断面図。FIG. 3 is a cross-sectional view of a conventional resin sealing device.

【図4】従来の樹脂封止装置によるリードフレームと半
導体素子の温度上昇を示す図。
FIG. 4 is a diagram showing a rise in temperature of a lead frame and a semiconductor element by a conventional resin sealing device.

【符号の説明】 1 リードフレーム 2 アイランド 3 インナーリード 4 金属細線 5 半導体素子 6 接着剤 7,7A 突き上げピン 8A 上型 8B 下型 9 プランジャ 10 樹脂タブレット 10A 流動樹脂 10B 封止樹脂 11 ランナ 12 ゲート 13A 上型キャビティ 13B 下型キャビティ 14 ポット[Description of Signs] 1 Lead frame 2 Island 3 Inner lead 4 Thin metal wire 5 Semiconductor element 6 Adhesive 7, 7A Push-up pin 8A Upper die 8B Lower die 9 Plunger 10 Resin tablet 10A Flowing resin 10B Sealing resin 11 Runner 12 Gate 13A Upper mold cavity 13B Lower mold cavity 14 Pot

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/56 H01L 23/28 - 23/30──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/56 H01L 23/28-23/30

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 下面に上型キャビティが設けられた上型
と、上面に設けられたランナーとゲートと下型キャビテ
ィとこの下型キャビティを貫通して上下動可能に設けら
れた突き上げピンとを有する下型とからなる集積回路の
樹脂封止装置において、前記突き上げピンはその上面が
リードフレームのアイランドの下面全体に接する大きさ
に形成されていることを特徴とする集積回路の樹脂封止
装置。
An upper mold having an upper mold cavity provided on a lower surface, a runner, a gate, a lower mold cavity provided on an upper surface, and a push-up pin provided to be vertically movable through the lower mold cavity. A resin sealing device for an integrated circuit comprising a lower die, wherein the push-up pin is formed in a size such that an upper surface thereof is in contact with the entire lower surface of the island of the lead frame.
JP14054991A 1991-06-13 1991-06-13 Resin sealing device for integrated circuits Expired - Fee Related JP2841926B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14054991A JP2841926B2 (en) 1991-06-13 1991-06-13 Resin sealing device for integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14054991A JP2841926B2 (en) 1991-06-13 1991-06-13 Resin sealing device for integrated circuits

Publications (2)

Publication Number Publication Date
JPH04365338A JPH04365338A (en) 1992-12-17
JP2841926B2 true JP2841926B2 (en) 1998-12-24

Family

ID=15271261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14054991A Expired - Fee Related JP2841926B2 (en) 1991-06-13 1991-06-13 Resin sealing device for integrated circuits

Country Status (1)

Country Link
JP (1) JP2841926B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7222243B2 (en) * 2018-12-28 2023-02-15 I-Pex株式会社 Base material preheating method and base material preheating apparatus

Also Published As

Publication number Publication date
JPH04365338A (en) 1992-12-17

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