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JP2847747B2 - Magnetostatic wave delay line type oscillator - Google Patents
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JP2847747B2 - Magnetostatic wave delay line type oscillator - Google Patents

Magnetostatic wave delay line type oscillator

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Publication number
JP2847747B2
JP2847747B2 JP11005489A JP11005489A JP2847747B2 JP 2847747 B2 JP2847747 B2 JP 2847747B2 JP 11005489 A JP11005489 A JP 11005489A JP 11005489 A JP11005489 A JP 11005489A JP 2847747 B2 JP2847747 B2 JP 2847747B2
Authority
JP
Japan
Prior art keywords
phase noise
magnetostatic wave
amplifier
yig
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP11005489A
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Japanese (ja)
Other versions
JPH02288605A (en
Inventor
弦 上原
久雄 片倉
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Yokogawa Electric Corp
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Yokogawa Electric Corp
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Priority to JP11005489A priority Critical patent/JP2847747B2/en
Publication of JPH02288605A publication Critical patent/JPH02288605A/en
Application granted granted Critical
Publication of JP2847747B2 publication Critical patent/JP2847747B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 <産業上の利用分野> 本発明は例えばVCO(voltage−controlled oscillato
r:電圧制御型発振器)等に使用される静磁波遅延線型発
振器(Magnetostatic Wave Delay Line Oscillator)に
関し,SSB位相ノイズの最適化をはかった発振器に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to, for example, a VCO (voltage-controlled oscillato).
The present invention relates to a magnetostatic wave delay line oscillator (Magnetostatic Wave Delay Line Oscillator) used for a voltage controlled oscillator (r) and the like, and relates to an oscillator in which SSB phase noise is optimized.

<従来の技術> まず,静磁波遅延型発振器の遅延素子について簡単に
説明する。一様磁界中に金属導体からなる2本のトラン
スジューサと磁性体とを近接して配置し,この2本のト
ランスジューサの一方に高周波電流を流すとその近くの
磁性体中のスピンが揺ぎ,その揺ぎが静磁波となって伝
搬し,他方のトランスジューサにはスピンの揺ぎに起因
する高周波の誘導電流が流れる。スピンの揺ぎの伝搬速
度は磁界の強さに応じて変化するので遅延時間の可変な
素子となる。
<Related Art> First, a delay element of a magnetostatic wave delay type oscillator will be briefly described. When a magnetic transducer and two transducers made of metal conductors are placed close to each other in a uniform magnetic field, and a high-frequency current is applied to one of the two transducers, the spin in the magnetic substance nearby fluctuates. The fluctuation propagates as a magnetostatic wave, and a high-frequency induced current due to the fluctuation of the spin flows through the other transducer. Since the propagation speed of the spin fluctuation changes according to the strength of the magnetic field, the element has a variable delay time.

第4図は上記静磁波遅延素子を用いた静磁波遅延線型
発振器を示す構成図である。図において1は静磁波遅延
素子であり,この遅延素子は絶縁材からなる基板状上に
一定間隔lを隔ててトランスジューサ5a,5bが形成さ
れ,そのトランスジューサに近接または接触してGGG
(ガドリニウム−ガリウム−ガーネット)基板上に形成
されたYIG薄膜により構成されている。2は増幅器,3は
カプラ,4はスペクトラムアナライザである。なお,送受
信する静磁波の波長の長さはトランスジューサの間隔a
により決定する。
FIG. 4 is a block diagram showing a magnetostatic wave delay linear oscillator using the magnetostatic wave delay element. In the figure, reference numeral 1 denotes a magnetostatic wave delay element, which is formed by forming transducers 5a and 5b on a substrate made of an insulating material at a predetermined interval 1 and approaching or in contact with the transducer to cause GGG.
(Gadolinium-gallium-garnet) It is composed of a YIG thin film formed on a substrate. 2 is an amplifier, 3 is a coupler, and 4 is a spectrum analyzer. The length of the wavelength of the magnetostatic wave to be transmitted and received is determined by the distance a between the transducers.
Determined by

この遅延素子に図示しない磁界印加手段により磁界Ho
が印加され,ループ中を流れる周波数信号をカプラ3を
介してスペクトラムアナライザ4内に取込んで発振周波
数特性を測定している。
Magnetic field H o by the magnetic field applying means (not shown) in the delay element
Is applied, a frequency signal flowing through the loop is taken into the spectrum analyzer 4 via the coupler 3, and the oscillation frequency characteristic is measured.

図において入力トランスジューサ5aに流した高周波電
流により磁性体中の電子スピンが揺ぎ,静磁波となって
出力トランスジューサ5b側に伝搬する。この出力は増幅
器2で増幅されカプラ3を介して出力される。なお,遅
延素子→増幅器→カプラ→遅延素子間はマイクロ波用ケ
ーブル5a,5b,5cにより結合されている。
In the figure, the high-frequency current flowing through the input transducer 5a causes the electron spin in the magnetic material to fluctuate and become a magnetostatic wave, which propagates to the output transducer 5b. This output is amplified by the amplifier 2 and output via the coupler 3. The delay element → amplifier → coupler → delay element is connected by microwave cables 5a, 5b, 5c.

ところでこの様な遅延素子を設計するに際してはSSB
位相ノイズが最小になるような最適な群遅延時間を決定
する必要がある。SSB位相ノイズに就いて簡単に説明す
る。
By the way, when designing such a delay element, SSB
It is necessary to determine an optimal group delay time that minimizes phase noise. The SSB phase noise will be briefly described.

第5図は上記構成の発振器に一定の磁界を印加したと
きに発振する周波数のスペクトラムを示している。この
図によればfoの中心周波数がパワーのピーク(Ps)とな
り,この前後の周波数はなだらかにパワーが小さくなっ
ている。全体の信号のトータルパワーとピークから離れ
たある周波数のパワー密度の比(実用上はピーク周波数
のパワーとその前後の周波数のパワー…図ではfoの周波
数のパワーPsとfoからfm離れた周波数のパワーの比Pss
b/Ps)をSSB位相ノイズL(fm)と呼んでいるがこの比
は小さい程望ましい。
FIG. 5 shows a spectrum of a frequency oscillated when a constant magnetic field is applied to the oscillator having the above configuration. This According to FIG f o center frequency of the power peak of (Ps), and the frequency of the back and forth is gently power is reduced. The ratio of the power density of a frequency away from the total power and peak of the entire signal (practically in the power ... Figure frequencies before and after the power of the peak frequency away fm from the power Ps and f o of the frequency f o Frequency power ratio Pss
b / Ps) is called SSB phase noise L (fm), and the smaller the ratio, the better.

<発明が解決しようとする課題> 上記構成の静磁波遅延型発振器において,SSB位相ノイ
ズを最小にするための最適な群遅延時間τgaは従来次式
により計算した値を用いている。
<Problem to be Solved by the Invention> In the magnetostatic wave delay type oscillator having the above-described configuration, the optimum group delay time τ ga for minimizing the SSB phase noise has conventionally used a value calculated by the following equation.

τga[μsec]=8.7[dB]/ {76.4[dB/(μsec・Oe)]・ΔH[Oe]} =114[nsec・Oe]/ΔH[Oe] …… 上式において,8.7[dB]は W.Ishak等により報告された値であり,1984年9月に発
行されたIEEE TRANSACTIONS MAGNET ICS VOL.MAG20,NO.
5の “TUNABLE MAGNETIC WAVE OSCILLATORS USING PURE AND
DOPED YIG FILMS"に記載されている。
In τ ga [μsec] = 8.7 [ dB] / {76.4 [dB / (μsec · O e)] · ΔH [O e]} = 114 [nsec · O e] / ΔH [O e] ...... above equation, 8.7 [dB] is a value reported by W. Ishak et al., IEEE TRANSACTIONS MAGNET ICS VOL.MAG20, NO.
5 “TUNABLE MAGNETIC WAVE OSCILLATORS USING PURE AND
DOPED YIG FILMS ".

しかしながら,上記式により計算したτgaの値は発
振器の中に含まれる増幅器の残留位相ノイズを無視して
計算されたものであり,そのため静磁波の伝搬長を上記
式により得られた値により決定しても最適なSSB位相
ノイズを得ることは出来ないという問題があった。
However, the value of τ ga calculated by the above equation is calculated by ignoring the residual phase noise of the amplifier included in the oscillator. Therefore, the propagation length of the magnetostatic wave is determined by the value obtained by the above equation. However, there is a problem that an optimum SSB phase noise cannot be obtained.

本発明は上記従来技術の問題に鑑みて成されたもの
で,増幅器の残留位相ノイズを考慮して最適な群遅延値
を求め,その値にも基づいて最小のSSB位相ノイズとな
る様に各寸法を決定する様にした静磁波遅延線型発振器
を提供することを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and determines an optimum group delay value in consideration of the residual phase noise of an amplifier, and based on the value, determines the minimum SSB phase noise so as to minimize the SSB phase noise. It is an object of the present invention to provide a magnetostatic wave delay line type oscillator whose dimensions are determined.

<課題を解決するための手段> 上記課題を解決するための本発明の構成は,基板上に
形成された厚さtを有するYIG薄膜と,前記YIG薄膜上に
一定距離lを隔てて形成された入出力トランスジューサ
と,前記入力トランスジューサに入力した信号に励起さ
れ,前記出力トランスジューサに伝搬する波長λの静磁
波を増幅する増幅器を含んで構成された静磁波遅延線型
発振器において,前記YIG薄膜に起因するSSB位相ノイズ
が最小となる最適群遅延値(τgs)における前記増幅器
の残留位相ノイズに起因するSSB位相ノイズが前記YIG薄
膜に起因するSSB位相ノイズより大きい場合は前記静磁
波の最適群遅延値を下記の式により計算し,その計算結
果に基づいて前記l,t,λの値を決定し,前記発振器から
の出力信号のSSB位相ノイズを最小にした事を特徴とす
るものである。
<Means for Solving the Problems> According to a configuration of the present invention for solving the above problems, a YIG thin film having a thickness t formed on a substrate and a YIG thin film formed on the YIG thin film at a constant distance 1 are provided. A magnetostatic wave delay line oscillator comprising an input / output transducer and an amplifier for amplifying a magnetostatic wave having a wavelength λ that is excited by a signal input to the input transducer and propagates to the output transducer. If the SSB phase noise due to the residual phase noise of the amplifier at the optimal group delay value (τ gs ) at which the SSB phase noise to be minimized is greater than the SSB phase noise due to the YIG thin film, the optimal group delay of the magnetostatic wave The value is calculated by the following equation, and the values of l, t, λ are determined based on the calculation result, and the SSB phase noise of the output signal from the oscillator is minimized. Than it is.

記 τgs={(L(f)−Pn−F+Pin)/(76.4×1
06)}×(1/ΔH)[sec] ただし L(f);アンプの残留位相ノイズ[dBc/Hz] F ;アンプの雑音指数 [dB] Pin ;静磁波遅延線入力 [dBm] ΔH ;YIGの磁気共鳴半値幅[Oe] Pn;熱雑音のレベル [dBm/Hz] 76.4×106(静磁波の群遅延時間)と遅延線の損失
の比例定数 <作用> 最適な群遅延時間を計算するに際しYIGからの位相ノ
イズおよびアンプの雑音指数の他,アンプの残留位相ノ
イズによる影響も考慮した計算式を用い,SSB位相ノイズ
が最小になるように各寸法を決定する。
Note that τ gs = {(L (f) −Pn−F + Pin) / (76.4 × 1
0 6 )} × (1 / ΔH) [sec] where L (f): amplifier residual phase noise [dBc / Hz] F: amplifier noise figure [dB] Pin: magnetostatic wave delay line input [dBm] ΔH; YIG magnetic resonance half width [O e ] Pn; Thermal noise level [dBm / Hz] 76.4 × 10 6 ; Proportional constant between τ g (group delay time of magnetostatic wave) and delay line loss <Action> Optimal group When calculating the delay time, each dimension is determined so as to minimize the SSB phase noise by using a calculation formula that takes into account the influence of the residual phase noise of the amplifier in addition to the phase noise from YIG and the noise figure of the amplifier.

<実施例> 以下,本発明について説明する。<Example> Hereinafter, the present invention will be described.

本発明では静磁波の最適な群遅延値(τgs)を次の
式により計算し,その計算結果に基づいて (1) 入出力トランスジューサの間隔l (2) YIG薄膜の厚さt (3) 伝搬する波長λ の内のいずれかの未知の値を決定する。
In the present invention, the optimum group delay value (τ gs ) of the magnetostatic wave is calculated by the following formula, and based on the calculation result, (1) the interval l between the input and output transducers l (2) the thickness t (3) of the YIG thin film Determine any unknown value of the propagating wavelength λ.

τgs={(L(f)−Pn−F+Pin)/(76.4×1
06)}×(1/ΔH)[sec] …… ただし L(f);アンプの残留位相ノイズ[dBc/Hz] F ;アンプの雑音指数 [dB] Pin ;静磁波遅延線入力 [dBm] ΔH ;YIGの磁気共鳴半値幅[Oe] Pn;熱雑音のレベル(−177) 76.4×106(静磁波の群遅延時間)と遅延線の損失
L[dB]の比例定数 L[dB]=76.4・106[dB/(Oe・s)] ・ΔH[Oe]・τ[s] ここでは静磁波の波長(λ)とYIGの膜厚(t)を既
知のものとしてトランスジューサの間隔lを求める場合
に就いて考える。なお静磁波の種類は体積前進波とす
る。
τ gs = {(L (f) −Pn−F + Pin) / (76.4 × 1
0 6 )} × (1 / ΔH) [sec] where L (f): amplifier residual phase noise [dBc / Hz] F: amplifier noise figure [dB] Pin: magnetostatic wave delay line input [dBm] ΔH: YIG magnetic resonance half width [O e ] Pn; thermal noise level (−177) 76.4 × 10 6 ; proportional constant L of τ g (group delay time of magnetostatic wave) and loss L [dB] of delay line [DB] = 76.4 · 10 6 [dB / (O e · s)] ΔH [O e ] · τ g [s] Here, the wavelength (λ) of the magnetostatic wave and the thickness (t) of the YIG are known. Let us consider the case where the interval l of the transducer is obtained. The type of the magnetostatic wave is a volume forward wave.

l=υ・τgs …… υ=dω/dκ tan(κt/α)=α α=[{ω/(2π・γ)}−(Hi)] /[Hi(4πMs+Hi)−{ω/(2π・
γ)}] 但し,υg;静磁波の群速度 ω;静磁波の角周波数 κ;静磁波の波数(2π/λ) α;無次元数 t;YIGの膜厚 γ;電子スピンの磁気回転比(〜2.8MHz/Oe) ω/2π;静磁波の周波数 Hi;YIG内部の磁界 4πMs;YIGの飽和磁化 上記t,λ,γ,Hi,4πMsの既知数からυを求め式
で求めたτgsとの積から式によりトランスジューサの
長さlを決定する。
l = υ g · τ gs ...... υ g = dω / dκ tan (κt / α) = α α 2 = [{ω / (2π · γ)} 2 - (Hi) 2] / [Hi (4πM s + Hi ) − {Ω / (2π ·
γ)} 2 ] where, υ g ; group velocity of magnetostatic wave ω; angular frequency of magnetostatic wave κ; wave number of magnetostatic wave (2π / λ) α; dimensionless number t; YIG film thickness γ; rotation ratio (~2.8MHz / Oe) ω / 2π ; frequency magnetostatic wave Hi; YIG internal magnetic field 4 [pi] Ms; YIG saturation magnetization above t, λ, γ, Hi, in formula seek upsilon g from a known number of 4PaiM s The length l of the transducer is determined by the equation from the product of the obtained τ gs .

例えばSSB位相ノイズL(fm)を中心波長から10kHz離
れた位置で最小にする最適な群遅延値(τgs)を計算す
ると次の様になる。
For example, when the optimum group delay value (τ gs ) for minimizing the SSB phase noise L (f m ) at a position 10 kHz away from the center wavelength is calculated, the following is obtained.

条件は次の通りとする。 The conditions are as follows.

YIGの磁気共鳴半値幅(ΔH);1.0Oe, アンプの雑音指数(F);4[dB] 静磁波遅延線入力(Pin);10[dBm] アンプの残留位相ノイズL(f);−160[dBc/Hz] τgs={(−160+177−4+10)/(76.4×106)} ×(1/1.0)=301[nsec] この結果を用いて YIGの飽和磁化;1760Oe(YIG標準的物性値) 外部磁界;2460Oe として伝搬長lmmとλmm,tμmの関係を求めると下表の
様になる。
YIG magnetic resonance half width (ΔH); 1.0 O e , amplifier noise figure (F); 4 [dB] magnetostatic wave delay line input (Pin); 10 [dBm] amplifier residual phase noise L (f); 160 [dBc / Hz] τ gs = {(- 160 + 177-4 + 10) / (76.4 × 10 6)} × (1 / 1.0) = 301 [nsec] YIG saturation magnetization of using the result; 1760O e (YIG standard physical properties values) external magnetic field; 2460O e as the propagation length lmm and Ramudamm, become table below as the determining a relationship Timyuemu.

なお,従来用いていた最適群遅延時間の計算式(式
参照)では τga=114/1.0=114[nsec] なので表のlmmの値は1/3程度の大きさとなる。
In the conventional formula for calculating the optimum group delay time (see formula), τ ga = 114 / 1.0 = 114 [nsec], so the value of lmm in the table is about 1/3.

また,従来例の計算式においては第6図(a)に示す
様にτgaが大きくなるとQ値が大きくなりSSB位相ノイ
ズが下がるがτgaの値が一定値を越えると損失が大きく
なりSSB位相ノイズは大きくなる。この従来の計算式に
おいてはアンプのノイズとして雑音指数Fが含まれては
いるがこの雑音指数はSSB位相ノイズの大小には影響す
るものの(第6図b参照)τgaの値がSSB位相ノイズを
最小に選ぶための値である事には変わらない。アンプの
残留位相ノイズを考慮した最小位相ノイズL(Fm)は次
式により表わす事が出来る。
Further, in the conventional example of calculation formula Figure 6 as shown in (a) tau ga is the but Q value becomes SSB phase noise decreases significantly the value of tau ga exceeds a predetermined value greater loss increases SSB Phase noise increases. Although Although this conventional formula are the contains the noise figure F as amplifier noise to affect the magnitude of the noise figure SSB phase noise (FIG. 6 b refer) tau value of ga can SSB phase noise Is still the value for choosing the minimum. The minimum phase noise L (F m ) considering the residual phase noise of the amplifier can be expressed by the following equation.

L(Fm) =max[Lω,L(f)]−20log(2πFmτ) =max[{Lω−20log1o(2πFmτ)} ,{(f)−20log1o(2πFmτ)}] …… 式においてmaxの中身の1項目はYIGノイズ(正確に
は熟雑音による位相ノイズの寄与分)であり,2項目はア
ンプの残留位相ノイズである。(従来は一項目だけしか
考慮されていなかった) ここで,Lωは Lω=−177+F−Pin+76.4・106ΔH・τ …… で与えられる。
L (F m) = max [ Lω, L (f)] - 20log 1 (2πF m τ g) = max [{Lω-20log 1 o (2πF m τ g)}, {(f) -20log 1 o ( 2πF m τ g )}]... In the equation, one item of max is YIG noise (more precisely, the contribution of phase noise due to mature noise), and two items are the residual phase noise of the amplifier. (Conventionally, only one item was considered) Here, Lω is given by Lω = −177 + F−Pin + 76.4 · 10 6 ΔH · τ g .

式の各項の位相ノイズと最適群遅延時間の関係は第
1図の様に表わす事が出来る。第1図においてイの直線
はアンプの残留位相ノイズによるものであり,ロは曲線
はYIGのノイズによるものである。図においてP0点はYIG
ノイズに起因する位相ノイズが最小になる点であるが,
ここにτgaを選ぶとそれより高いレベルのアンプ残留位
相ノイズP1がSSB位相ノイズとなる。P2点は本発明のア
ンプの残留位相ノイズを考慮した計算式で求めた点であ
りP1の点よりSSB位相ノイズを小さくできる事が分る。
なお,この発明の計算式を適用できるのはイの直線とロ
の曲線の交点がP0点より右側にあるときのみである。
The relationship between the phase noise of each term in the equation and the optimum group delay time can be expressed as shown in FIG. In FIG. 1, the straight line a is due to the residual phase noise of the amplifier, and the curve b is due to the YIG noise. In the figure, point P 0 is YIG
This is the point where the phase noise due to noise is minimized.
If τ ga is selected here, the amplifier residual phase noise P 1 at a higher level becomes SSB phase noise. P 2 points it is understood that the amplifiers of the residual phase noise is the point determined by the equation considering the SSB phase noise from the point of P 1 of the present invention can be reduced.
Incidentally, you can apply a formula of the invention is only when the intersection of the straight line and b of the curve b is on the right side than P 0 point.

第2図はアンプの残留位相ノイズや静磁波遅延線への
入力が小さくなりτga>τgsとなった時(つまりイの直
線とロの曲線の交点がP0点より左側に来たとき)のYIG
ノイズとアンプノイズの関係を示すものである。図によ
ればYIGノイズに起因する位相ノイズとアンプの残留位
相ノイズの交点P4点となるτgsの値よりYIGノイズのみ
を対象として算出したτgaの点が最小のSSB位相ノイズ
を得られる値となる。この様な場合は従来の式を用い
て最小の遅延時間を計算する。なお,τgaとτgsのいず
れが大きいかの判別は次式により求める事が出来る。
FIG. 2 shows the case where the residual phase noise of the amplifier and the input to the magnetostatic wave delay line become small and τ ga > τ gs (that is, the intersection of the line a and the line B comes to the left of the point P 0 ). ) YIG
It shows the relationship between noise and amplifier noise. According to the figure, the point of τ ga calculated only for YIG noise is obtained from the value of τ gs which is the intersection point P 4 of the phase noise caused by YIG noise and the residual phase noise of the amplifier, and the minimum SSB phase noise can be obtained. Value. In such a case, the minimum delay time is calculated using a conventional equation. Note that which of τ ga and τ gs is larger can be determined by the following equation.

τga=8.69{1/(76.4・106)} τgs={L(f)+177−F+Pin}{1/(76.4・1
06)} なお,基板に形成する入出力トランスジューサの配置
は例えば第3図(a),(b)に示すような(基板の形
状を大きくすることなく伝搬長lを長くした)ものであ
っても良い。
τ ga = 8.69 {1 / (76.4 · 10 6 )} τ gs = {L (f) + 177−F + Pin} {1 / (76.4 · 1
0 6)} The arrangement of the input and output transducers formed on the substrate, for example 3 (a), be those (b) in as shown (with a longer propagation length l without increasing the shape of the substrate) May be.

<発明の効果> 以上述べたように本発明によれば,アンプの残留位相
ノイズを含んだ最適群遅延時間を用いてl,t,λのうちの
いずれかの未知の値を設計する事によりSSB位相ノイズ
の最小な静磁波遅延型発振器を実現する事が出来る。
<Effect of the Invention> As described above, according to the present invention, any one of the unknown values of l, t, and λ is designed by using the optimal group delay time including the residual phase noise of the amplifier. The magnetostatic wave delay type oscillator with the minimum SSB phase noise can be realized.

【図面の簡単な説明】[Brief description of the drawings]

第1図,第2図はYIG薄膜に起因するノイズとアンプの
残留位相ノイズに起因するSSB位相ノイズと群遅延時間
の関係を示す図,第3図は基板とYIG薄膜の形状を変化
させた状態を示す図,第4図は一般的な静磁波遅延線型
発振器を示す構成図,第5図はSSB位相ノイズを説明す
る為の周波数とパワーの関係を示す図,第6図(a),
(b)はSSB位相ノイズとτgaの関係を示す図である。
1……静磁波遅延素子,2……増幅器,3……カプラ,5a…
…入力トランスジューサ,5b……出力トランスジュー
サ。
1 and 2 show the relationship between the noise caused by the YIG thin film, the SSB phase noise caused by the residual phase noise of the amplifier, and the group delay time, and FIG. 3 shows the shapes of the substrate and the YIG thin film changed. FIG. 4 is a diagram showing a state, FIG. 4 is a configuration diagram showing a general magnetostatic wave delay linear oscillator, FIG. 5 is a diagram showing a relationship between frequency and power for explaining SSB phase noise, and FIGS.
(B) is a diagram showing a relationship between SSB phase noise and τ ga .
1 ... magnetostatic wave delay element, 2 ... amplifier, 3 ... coupler, 5a ...
… Input transducer, 5b …… output transducer.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 昭和61年度電子通信学会総合全国大会 論文番号814 W.Ishak,“TUNABLE MAGNETIC WAVE OSCI LLATORS USING PURE AND DOPED YIG FIL MS”IEEE TRANSACTIO NS MAGNETICS VOL.M AG20,NO.5, (58)調査した分野(Int.Cl.6,DB名) H03B 5/18 H03H 9/68,9/25 H01P 9/00──────────────────────────────────────────────────続 き Continuation of front page (56) References 1986 IEICE General Conference, Article No. 814 Ishak, “TUNABLE MAGNETIC WAVE OSCI LLATORS USING PURE AND DOPED YIG FIL MS”, IEEE TRANSACTION NS MAGNETICS VOL. M AG20, NO. 5, (58) Field surveyed (Int. Cl. 6 , DB name) H03B 5/18 H03H 9/68, 9/25 H01P 9/00

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板上に形成された厚さtを有するYIG薄
膜と,前記YIG薄膜上に一定距離lを隔てて形成された
入出力トランスジューサと,前記入力トランスジューサ
に入力した信号に励起され,前記出力トランスジューサ
に伝搬する波長λの静磁波を増幅する増幅器を含んで構
成された静磁波遅延線型発振器において,前記YIG薄膜
に起因するSSB位相ノイズが最小となる最適群遅延値
(τgs)における前記増幅器の残留位相ノイズに起因す
るSSB位相ノイズが前記YIG薄膜に起因するSSB位相ノイ
ズより大きい場合は前記静磁波の最適群遅延値を下記の
式により計算し,その計算結果に基づいて前記l,t,λの
値を決定し,前記発振器からの出力信号のSSB位相ノイ
ズを最小にした事を特徴とする静磁波遅延線型発振器。 記 τgs={(L(f)−Pn−F+Pin)/(76.4×106)} ×(1/ΔH)[sec] ただし L(f);アンプの残留位相ノイズ[dBc/Hz] F ;アンプの雑音指数 [dB] Pin ;静磁波遅延線入力 [dBm] ΔH ;YIGの磁気共鳴半値幅[Oe] Pn;熱雑音のレベル [dBm/Hz] 76.4×106(静磁波の群遅延時間…変数)と遅延線
の損失の比例定数
A YIG thin film having a thickness of t formed on a substrate, an input / output transducer formed on the YIG thin film at a predetermined distance l, and a signal inputted to the input transducer being excited by the signal; In a magnetostatic wave delay linear oscillator including an amplifier for amplifying a magnetostatic wave having a wavelength of λ propagating to the output transducer, an optimal group delay value (τ gs ) at which SSB phase noise caused by the YIG thin film is minimized. If the SSB phase noise caused by the residual phase noise of the amplifier is larger than the SSB phase noise caused by the YIG thin film, the optimum group delay value of the magnetostatic wave is calculated by the following equation, and based on the calculation result, , t, λ are determined, and the SSB phase noise of the output signal from the oscillator is minimized. Note τ gs = {(L (f) −Pn−F + Pin) / (76.4 × 10 6 )} × (1 / ΔH) [sec] where L (f); residual phase noise of amplifier [dBc / Hz] F; noise figure of the amplifier [dB] Pin; magnetostatic wave delay line input [dBm] ΔH; YIG magnetic resonance half-width [O e] Pn; thermal noise level [dBm / Hz] 76.4 × 10 6; τ g ( magnetostatic wave Group delay time… variable) and delay line loss proportional constant
JP11005489A 1989-04-28 1989-04-28 Magnetostatic wave delay line type oscillator Expired - Lifetime JP2847747B2 (en)

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JPH02288605A JPH02288605A (en) 1990-11-28
JP2847747B2 true JP2847747B2 (en) 1999-01-20

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Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
W.Ishak,"TUNABLE MAGNETIC WAVE OSCILLATORS USING PURE AND DOPED YIG FILMS"IEEE TRANSACTIONS MAGNETICS VOL.MAG20,NO.5,
昭和61年度電子通信学会総合全国大会 論文番号814

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