JP2849412B2 - Method for producing ferromagnetic metal thin film - Google Patents
Method for producing ferromagnetic metal thin filmInfo
- Publication number
- JP2849412B2 JP2849412B2 JP1226624A JP22662489A JP2849412B2 JP 2849412 B2 JP2849412 B2 JP 2849412B2 JP 1226624 A JP1226624 A JP 1226624A JP 22662489 A JP22662489 A JP 22662489A JP 2849412 B2 JP2849412 B2 JP 2849412B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal thin
- ferromagnetic metal
- target
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims description 32
- 239000010409 thin film Substances 0.000 title claims description 32
- 239000002184 metal Substances 0.000 title claims description 31
- 229910052751 metal Inorganic materials 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910000702 sendust Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 230000005291 magnetic effect Effects 0.000 description 22
- 230000005415 magnetization Effects 0.000 description 16
- 239000002245 particle Substances 0.000 description 14
- 238000007670 refining Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、磁気異方性をもつ例えばFe,Si,Al合金膜な
どの強磁性金属薄膜の製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a ferromagnetic metal thin film having magnetic anisotropy, such as an Fe, Si, or Al alloy film.
従来の技術 従来、異方性をもたせた強磁性金属薄膜を製造する方
法として、磁場を加えながら成膜する方法、成膜は無磁
場の状態で行ない、成膜後に磁場を加えて焼純を行なう
方法、斜め蒸着法により成膜する方法などがある。2. Description of the Related Art Conventionally, as a method of manufacturing a ferromagnetic metal thin film having anisotropy, a method of forming a film while applying a magnetic field, a method of forming a film without a magnetic field, and applying a magnetic field after film formation to perform refining. And a method of forming a film by an oblique evaporation method.
磁気異方性をもつ強磁性金属薄膜を利用したものとし
ては、ビデオ・テープレコーダーに使用する磁気ヘッド
がある。磁気ヘッドの高周波特性を向上させる方法とし
て、磁気異方性を持たせた強磁性金属薄膜が使用されて
いる。ところで、透磁率μに影響を及ぼす因子として、
磁壁の移動と、スピンの回転とがあり、低周波域では、
磁壁の移動による寄与が支配的である。As a device using a ferromagnetic metal thin film having magnetic anisotropy, there is a magnetic head used for a video tape recorder. As a method for improving the high frequency characteristics of a magnetic head, a ferromagnetic metal thin film having magnetic anisotropy is used. By the way, as a factor affecting the magnetic permeability μ,
There are domain wall movement and spin rotation, and at low frequencies,
The contribution by the movement of the domain wall is dominant.
一方、高周波域では、スピンによる寄与が支配的であ
る。磁化困難軸方向は、スピンによる寄与が支配的にな
る方向なので、高周波特性を向上させる方法として面内
異方性をもたせた強磁性金属薄膜が使用されている。On the other hand, in the high frequency region, contribution by spin is dominant. Since the hard axis direction is a direction in which contribution by spin becomes dominant, a ferromagnetic metal thin film having in-plane anisotropy is used as a method for improving high-frequency characteristics.
発明が解決しようとする課題 ところで、上記の従来の強磁性金属薄膜に異方性をも
たせる製造方法のうち、磁場を加えながら成膜する方法
では、センダスト合金の強磁性金属薄膜には、再現性良
く磁気異方性をもたせることができず、よって、成膜は
無磁場の状態で行ない、成膜後磁場を加えて焼純を行な
う方法では、焼純に最低減必要な温度がセンダスト合金
の強磁性金属薄膜のキュリー点よりも高いために、異方
性をもたせることができない。また斜め蒸着法による方
法では、斜め入射効果に起因する自己陰影効果により、
異方性をもたせることができるが、蒸着法で成膜するた
めに、強磁性合金薄膜の組成比を再現性良く制御するこ
とが難しく、センダスト合金の強磁性金属薄膜は、組成
比により軟磁気特性が変化するので、良好な軟磁気特性
を再現性良く得ることができないという問題がある。Problems to be Solved by the Invention Among the above-mentioned conventional methods for providing a ferromagnetic metal thin film with anisotropy, the method of forming a film while applying a magnetic field requires a reproducible method for a sendust alloy ferromagnetic metal thin film. It is not possible to give magnetic anisotropy well, and therefore, in the method of performing film formation without a magnetic field and applying a magnetic field after film formation to perform refining, the minimum temperature required for refining is the temperature of sendust alloy. Since it is higher than the Curie point of the ferromagnetic metal thin film, it cannot have anisotropy. In the oblique deposition method, the self-shading effect caused by the oblique incidence effect causes
Although it can have anisotropy, it is difficult to control the composition ratio of the ferromagnetic alloy thin film with good reproducibility because the film is formed by the vapor deposition method. Since the characteristics change, there is a problem that good soft magnetic characteristics cannot be obtained with good reproducibility.
以上記したように、高周波特性の優れた強磁性金属薄
膜をうるために、本発明は面内磁化異方性を持たせたい
が、簡単で再現性の良い方法を見出すことが目的であ
る。As described above, in order to obtain a ferromagnetic metal thin film having excellent high-frequency characteristics, the present invention intends to provide in-plane magnetization anisotropy, but an object of the present invention is to find a simple and reproducible method.
課題を解決するための手段 本発明はこのような目的を達成するために、対向ター
ゲット式スパッタリング装置において、強磁性金属薄膜
を形成することと、基板にもっとも近いターゲットの外
周部の一点と、ターゲットにもっとも近い基板の外周部
の一点とを結ぶ方向と、基板面のなす角度θが、０゜＜
θ≦45゜であることと、成膜を行なうときのスパッタリ
ングのガス圧を２×10-3〔torr〕より低くすることを特
徴とする異方性をもたせた強磁性金属薄膜の製造方法で
ある。Means for Solving the Problems In order to achieve such an object, the present invention provides a facing target type sputtering apparatus, in which a ferromagnetic metal thin film is formed, a point on an outer peripheral portion of the target closest to the substrate, and a target. The angle θ between the direction connecting the outer peripheral portion of the substrate closest to the point and the substrate surface is 0 ° <
θ ≦ 45 ° and a method for producing a ferromagnetic metal thin film having anisotropy, characterized in that the gas pressure of sputtering at the time of film formation is lower than 2 × 10 −3 [torr]. is there.
作用 上記の構成によると、対向ターゲット式スパッタリン
グ装置の要部を示す第３図のように、スパッタリングガ
スでArガスは、ターゲット1a,1bに、高電圧を印加する
ことにより励起し、プラズマ化し、Ar+イオン粒子とな
り、ターゲット1a,1bに衝突し、ターゲット材料であるF
e−Si−Al系合金の粒子をターゲット面より、たたき出
す。Operation According to the above configuration, as shown in FIG. 3 showing a main part of a facing target type sputtering apparatus, Ar gas in a sputtering gas is excited by applying a high voltage to the targets 1a and 1b to turn into plasma, Ar + ion particles collide with the targets 1a and 1b, and the target material F
The particles of the e-Si-Al alloy are beaten from the target surface.
たたき出された粒子は、通常Arガスの粒子に衝突し、
ジグザグ運動しながら、基板4a,4bにたどり着くが、ス
パッタリングガス圧が低い場合にはAr粒子の存在する確
率が小さく、衝突する確率も小さくなり、直進性をもっ
たまま、入射対向5a,5bのような向きに基板4a,4bに到達
し、例えば基板4aには入射方向5bよりも入射対向5aより
飛来する粒子が覆いために斜め入射効果により、強磁性
金属薄膜６は、第４図の破断面の概略図に示したよう
に、基板面4Sに対して、スパッタリングされた粒子が多
く入射する方向に、角度ψ（但し０゜＜ψ＜90゜）傾い
た方向に、柱状晶が成長するような微細構造となり、上
記強磁性金属薄膜を、焼純した後の結晶磁気異方性定数
Kuが正の符号をとる組成の強磁性金属薄膜では、ターゲ
ット面と平行な方向に、結晶磁気異方性定数Kuが負の符
号をとる組成の強磁性金属薄膜では、ターゲット面と垂
直な方向に、磁化困難軸方向をもたせることができる。The beaten particles usually collide with Ar gas particles,
While zigzag movement, it reaches the substrates 4a and 4b, but when the sputtering gas pressure is low, the probability that Ar particles are present is small, the probability of collision is small, and the incident facing 5a, 5b is kept straight. The ferromagnetic metal thin film 6 reaches the substrates 4a and 4b in such a direction, for example, because the substrate 4a is covered with particles arriving from the incident counterpart 5a rather than the incident direction 5b, and the ferromagnetic metal thin film 6 is broken as shown in FIG. As shown in the schematic view of the cross section, the columnar crystal grows in a direction inclined by an angle ψ (however, 0 ゜ <゜ <90 ゜) with respect to the substrate surface 4S in a direction in which many sputtered particles are incident. The crystal magnetic anisotropy constant after refining the above ferromagnetic metal thin film
In a ferromagnetic metal thin film with a composition in which Ku has a positive sign, the direction perpendicular to the target surface is in a direction parallel to the target surface. In addition, a hard axis direction can be provided.
第５図は、本発明者が、強磁性金属薄膜を焼純後のヒ
ステリシスループの概略図で、横軸には、磁場の強さを
Oeでまた縦軸は磁化の強さを示しており、破線Ｈと実線
Ｅは、基板を磁場の中に水平にセットし磁化曲線を測定
した結果で、破線Ｈと実線Ｅとは、基板の向きを直角に
変えたおり、破線H,実線Ｅはそれぞれ磁化困難軸方向、
磁化容易軸方向の磁化曲線を示すものであり、第５図ａ
は磁化曲線に顕著な差があり、困難軸方向の磁化曲線の
破線Ｈは、ループが閉じており、このような磁性膜は優
れた高周波特性を示す。第５図ｂは、磁化曲線に顕著な
差がなく、困難軸方向の磁化曲線である破線Ｈは、ルー
プが開き、このような磁性膜は、十分な高周波特性が得
られない。FIG. 5 is a schematic diagram of a hysteresis loop after the inventor has refined a ferromagnetic metal thin film, and the horizontal axis indicates the strength of the magnetic field.
Oe and the vertical axis show the magnetization intensity. The broken line H and the solid line E are the results of measuring the magnetization curve with the substrate set horizontally in a magnetic field. The direction is changed to a right angle, and the broken line H and the solid line E indicate the hard magnetization axis direction, respectively.
FIG. 5 shows a magnetization curve in the easy axis direction, and FIG.
Has a remarkable difference in the magnetization curve, and the broken line H of the magnetization curve in the hard axis direction has a closed loop, and such a magnetic film exhibits excellent high-frequency characteristics. In FIG. 5b, there is no remarkable difference in the magnetization curves, and the broken line H, which is the magnetization curve in the hard axis direction, has a loop open, and such a magnetic film cannot obtain sufficient high frequency characteristics.
基板に飛来するスパッタリング粒子が、スパッタリン
グガス粒子にぶつかり、散乱されて、直進性が失われな
いように、スパッタリングガス圧を２×10-3〔torr〕以
下にすることと、第２図に示した基板にもっとも近いタ
ーゲット面の外周部の一点1Pとターゲットともっとも近
い基板面の外周部の一点4Pを結ぶ方向と、基板面のなす
角度θが０＜θ≦45゜にすることにより、基板に斜め方
向より飛来するスパッタリング粒子の確率が高くなるこ
とと、相対するターゲット1a,1bより等距離となる基板
ホルダー３の中心線の両側に基板4a,4bを配置すること
で、片側の基板4aには、片方のターゲット1aより入射す
るスパッタリング粒子がもう一方のターゲット1bより入
射する粒子より多数となり、斜め入射効果がそこなわれ
ないことで、第５図ａに示すような磁化曲線を有した良
好な異方性をもった強磁性金属薄膜を得ることができ
る。As shown in FIG. 2, the sputtering gas pressure is set to 2 × 10 −3 [torr] or less so that the sputtering particles flying on the substrate hit the sputtering gas particles, are scattered, and do not lose linearity. By making the angle θ between the substrate surface and the direction connecting the point 1P of the outer peripheral portion of the target surface closest to the target and the point 4P of the outer peripheral portion of the substrate surface closest to the target 0 <θ ≦ 45 °, By increasing the probability of sputtered particles flying obliquely from above, and by disposing the substrates 4a, 4b on both sides of the center line of the substrate holder 3 equidistant from the opposing targets 1a, 1b, one side of the substrate 4a As shown in FIG. 5A, the sputtered particles incident from one target 1a become larger than the particles incident from the other target 1b, and the oblique incident effect is not impaired. It can be obtained ferromagnetic metal thin film having a good anisotropy having a magnetization curve.
実施例 以下、この発明について図面を参照して説明する。Hereinafter, the present invention will be described with reference to the drawings.
第１図は、この発明の一実施例に関する対向ターゲッ
ト式スパッタリング装置の断面図である。図において1
a,1bはターゲット、３は基板ホルダー、4a,4bは基板で
ある。FIG. 1 is a sectional view of a facing target type sputtering apparatus according to an embodiment of the present invention. 1 in the figure
a and 1b are targets, 3 is a substrate holder, and 4a and 4b are substrates.
次に上記の対向ターゲット式スパッタリング装置のス
パッタリング条件について説明する。ターゲット1a,1b
の寸法は、幅130mm奥行き180mmの長方形の板状のものを
用いた。ターゲット間隔は180mmで、基板4a,4b寸法は25
mm角である。基板4aの端面4Pとターゲット1a端面1Pを結
ぶ方向と基板面4Sのなす角度θは45゜である。スパッタ
リングガスは、Ar、スパッタリングガス圧は１×10
-3〔torr〕、投入電圧は3K〔Ｗ〕で、ターゲット材料の
組成は、85wt％Fe−9.6wt％Si−5.4wt％Alである。成膜
後の焼純は600℃の温度で行なう。Next, the sputtering conditions of the facing target type sputtering apparatus will be described. Target 1a, 1b
The dimensions used were rectangular plate-like ones having a width of 130 mm and a depth of 180 mm. The target spacing is 180mm and the board 4a, 4b dimensions are 25
mm square. The angle θ between the direction connecting the end surface 4P of the substrate 4a and the end surface 1P of the target 1a and the substrate surface 4S is 45 °. The sputtering gas is Ar and the sputtering gas pressure is 1 × 10
-3 [torr], the input voltage was 3 K [W], and the composition of the target material was 85 wt% Fe-9.6 wt% Si-5.4 wt% Al. Refining after film formation is performed at a temperature of 600 ° C.
この実施例によれば、成膜される強磁性金属薄膜の断
面構造は、第４図に示すように基板面の法線方向に対
し、ターゲット方向に傾いた柱状構造となり、この膜の
結晶磁気異方性定数Kuの符号は正であったので磁化困難
軸方向がターゲット面と平行で、第５図ａに示すような
磁化曲線Ｈで困難軸方向の閉じた良好な異方性をもつ高
周波特性の良い強磁性金属薄膜ができる。According to this embodiment, the cross-sectional structure of the formed ferromagnetic metal thin film has a columnar structure inclined toward the target with respect to the normal direction of the substrate surface as shown in FIG. Since the sign of the anisotropy constant Ku was positive, the direction of the hard axis was parallel to the target surface, and the magnetization curve H as shown in FIG. A ferromagnetic metal thin film with good characteristics can be obtained.
なお上記実施例では、強磁性金属薄膜の材質をFe,Si,
Alを組成とする合金としたが、この発明ではその他に、
都合によっては、Ru,Ti,Crなどを添加したものとしても
よい。In the above embodiment, the material of the ferromagnetic metal thin film is Fe, Si,
Although the alloy was composed of Al, in the present invention, in addition,
Depending on circumstances, Ru, Ti, Cr or the like may be added.
発明の効果 本発明は、磁気異方性をもつ強磁性金属薄膜を従来の
ような磁場中での成膜や焼鈍あるいは斜め蒸着のような
方法によらず成形するもので、本発明の実施例に示すよ
うな対向ターゲット式スパッタリング装置内で基板の配
置の仕方とスパッタリングガス圧を適切に選択するとい
う最も簡単な手段により磁気異方性をもつ強磁性金属薄
膜をえることができる。Effect of the Invention The present invention is to form a ferromagnetic metal thin film having magnetic anisotropy without using a conventional method such as film formation in a magnetic field, annealing or oblique vapor deposition. A ferromagnetic metal thin film having magnetic anisotropy can be obtained by the simplest means of appropriately selecting the method of arranging the substrates and the sputtering gas pressure in a facing target type sputtering apparatus as shown in FIG.
第１図は本発明の一実施例の対向ターゲット式スパッタ
リング装置と基板の配置を示す断面図、 第２図は対向ターゲット式スパッタリング装置と基板の
配置を示す断面図である。 第３図は、対向ターゲット式スパッタリング装置と基板
とスパッタリング粒子の入射方向を示す断面図である。 第４図は本発明の実施により形成された強磁性金属薄膜
の断面図である。 第５図ａは本発明の実施により形成された強磁性金属薄
膜の磁化曲線である。 第５図ｂは本発明の条件以外の条件で、対向ターゲット
式スパッタリング装置により形成された強磁性金属薄膜
の磁化曲線である。 1a,1b……ターゲット、 1P……基板にもっとも近いターゲット端面の一点、 2a,2b……マグネット、 ３……基板、 4a,4b……基板、 4P……ターゲットにもっとも近い基板端面の一点、 4S……基板面、 5a,5b……基板に飛来するスパッタリング粒子の入射方
向、 ６……強磁性金属薄膜、 Ｅ……磁化容易方向の磁化曲線、 Ｈ……磁化困難軸方向の磁化曲線。FIG. 1 is a sectional view showing an arrangement of a facing target type sputtering apparatus and a substrate according to an embodiment of the present invention, and FIG. 2 is a sectional view showing an arrangement of a facing target type sputtering apparatus and a substrate. FIG. 3 is a sectional view showing a facing target type sputtering apparatus, a substrate, and an incident direction of sputtered particles. FIG. 4 is a sectional view of a ferromagnetic metal thin film formed according to the embodiment of the present invention. FIG. 5a is a magnetization curve of a ferromagnetic metal thin film formed according to the present invention. FIG. 5b is a magnetization curve of a ferromagnetic metal thin film formed by a facing target type sputtering apparatus under conditions other than the conditions of the present invention. 1a, 1b …… Target, 1P …… Point of the target end face closest to the substrate, 2a, 2b …… Magnet, 3 …… Substrate, 4a, 4b …… Substrate, 4P …… Point of the substrate end face closest to the target, 4S: substrate surface, 5a, 5b: incident direction of sputtered particles flying on the substrate, 6: ferromagnetic metal thin film, E: magnetization curve in easy magnetization direction, H: magnetization curve in hard axis direction.
Claims (2)
強磁性金属薄膜か又は、上記組成分に、Ru,Ti,Cr中の少
なくとも一種類以上添加した強磁性金属薄膜を対向ター
ゲット式スパッタリング法によって成膜する製造方法に
おいて、 基板に最も近いターゲットの外周部の一点と、ターゲッ
トに最も近い基板の外周部の一点とを結ぶ方向と、基板
表面とのなす角度が０゜よりも大きく、かつ45゜以下で
あることを特徴とする強磁性金属薄膜の製造方法。An opposed target is a sendust alloy ferromagnetic metal thin film having a composition of Si, Al, Fe or a ferromagnetic metal thin film obtained by adding at least one of Ru, Ti, and Cr to the above composition. In a manufacturing method in which a film is formed by a sputtering method, an angle between a point connecting an outer peripheral portion of the target closest to the substrate, a point on the outer peripheral portion of the substrate closest to the target, and the substrate surface is smaller than 0 °. A method for producing a ferromagnetic metal thin film, which is large and at most 45 °.
いて、スパッタリング成膜時の、ガス圧を２×10-3torr
よりも低くすることを特徴とする強磁性金属薄膜の製造
方法。2. The method according to claim 1, wherein the gas pressure during sputtering film formation is 2 × 10 -3 torr.
A method for producing a ferromagnetic metal thin film, the method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1226624A JP2849412B2 (en) | 1989-08-31 | 1989-08-31 | Method for producing ferromagnetic metal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1226624A JP2849412B2 (en) | 1989-08-31 | 1989-08-31 | Method for producing ferromagnetic metal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0389506A JPH0389506A (en) | 1991-04-15 |
| JP2849412B2 true JP2849412B2 (en) | 1999-01-20 |
Family
ID=16848117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1226624A Expired - Lifetime JP2849412B2 (en) | 1989-08-31 | 1989-08-31 | Method for producing ferromagnetic metal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2849412B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4645178B2 (en) * | 2004-11-30 | 2011-03-09 | Ｔｄｋ株式会社 | Magnetic element and inductor |
-
1989
- 1989-08-31 JP JP1226624A patent/JP2849412B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0389506A (en) | 1991-04-15 |
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