JP2850806B2 - Substrate drainer - Google Patents
Substrate drainerInfo
- Publication number
- JP2850806B2 JP2850806B2 JP7277328A JP27732895A JP2850806B2 JP 2850806 B2 JP2850806 B2 JP 2850806B2 JP 7277328 A JP7277328 A JP 7277328A JP 27732895 A JP27732895 A JP 27732895A JP 2850806 B2 JP2850806 B2 JP 2850806B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- draining
- substrate
- tank
- rinsing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 53
- 239000007788 liquid Substances 0.000 claims description 103
- 239000011521 glass Substances 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 30
- 238000004140 cleaning Methods 0.000 description 10
- 238000011109 contamination Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板の液切り装置
に関し、特に薄膜半導体装置の製造に用いる大型ガラス
基板のウェット処理後の液切り装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device for draining a substrate, and more particularly to a device for draining a large glass substrate used for manufacturing a thin film semiconductor device after wet processing.
【０００２】[0002]
【従来の技術】従来のウェット処理後の液切り装置につ
いて、図３を参照して説明する。なお、図３は、従来の
液切り装置を説明する図であって、このうち図３（Ａ）
は、その全体構造を示す図、図３（Ｂ）は、液切りユニ
ットの断面図である。従来のウェット処理装置は、図３
（Ａ）に示すように洗浄、エッチング等のウェット処理
最終段のリンス槽５の後に基板の上下に液切りユニット
を備えた液切り槽６より構成される。2. Description of the Related Art A conventional liquid draining device after wet processing will be described with reference to FIG. FIG. 3 is a view for explaining a conventional liquid draining apparatus, and FIG.
Is a view showing the entire structure, and FIG. 3 (B) is a sectional view of a liquid draining unit. FIG. 3 shows a conventional wet processing apparatus.
As shown in FIG. 1A, a rinsing tank 5 at the final stage of wet processing such as cleaning and etching is provided, and a rinsing tank 6 provided with liquid elimination units above and below the substrate.
【０００３】洗浄、エッチング等の処理の最終段として
リンス槽５に搬送コロ４により搬送されたガラス基板１
は、リンス槽５の上下に備えられた純水のリンスシャワ
ー３によりリンスされた後、基板表面にリンス液が付着
した状態で液切り槽６に搬送される。液切り槽６では、
基板表面に付着したリンス液が、上下１組以上の液切り
ユニット２から噴出する乾燥空気、乾燥窒素等の乾燥ガ
スにより基板端から他方の基板端へ向かって、一部分の
リンス液は基板表面を伝いながら吹き飛ばされ液切りが
行われる。液切りユニット２の断面は、図３（Ｂ）に示
すように、液切りユニット２に導入された乾燥空気、乾
燥窒素等の乾燥ガスが乾燥ガス用スリット８から噴出す
る構造になっている。[0003] As a final stage of processing such as cleaning and etching, the glass substrate 1 transported by the transport roller 4 to the rinsing tank 5
Is rinsed by a pure water rinse shower 3 provided above and below the rinsing tank 5 and then transferred to the drain tank 6 with the rinsing liquid attached to the substrate surface. In the drain tank 6,
The rinsing liquid attached to the substrate surface is sprayed from one or more sets of upper and lower liquid draining units 2 by a dry gas such as dry air or dry nitrogen from the substrate end to the other substrate end. It is blown off as it travels, and draining is performed. As shown in FIG. 3B, the cross section of the liquid draining unit 2 has a structure in which a dry gas such as dry air or dry nitrogen introduced into the liquid draining unit 2 is blown out from the dry gas slit 8.
【０００４】ウェット処理後にガラス基板上に数μｍ以
上のシミが付着していると、パターン欠陥を形成した
り、残留した汚染物によりトランジスタ特性の劣化をも
たらし表示不良となるのでウェット処理後、汚染を残さ
ないような液切りが必要となる。液切り後にシミ、汚染
を残さないために、センサーを設けて、液切り槽に入る
直前までリンスが行われる装置が提案されている（特開
平４−１７９２２６号公報参照）。しかし、液切り直前
の汚染は避けられても、液切り時の汚染は避けられな
く、依然として問題が残る。If stains of several μm or more adhere to the glass substrate after the wet processing, pattern defects are formed, and the remaining contaminants cause deterioration of transistor characteristics, resulting in poor display. It is necessary to drain the liquid so as not to leave behind. An apparatus has been proposed in which a sensor is provided and rinsing is performed immediately before the liquid enters a drain tank in order to prevent stains and contamination after draining the liquid (see JP-A-4-179226). However, even if the contamination immediately before draining can be avoided, the contamination during draining cannot be avoided, and the problem still remains.
【０００５】[0005]
【発明が解決しようとする課題】従来の前記したウェッ
ト処理後のエアーナイフのような液切り装置は、リンス
液で濡れた薄膜半導体装置用ガラス基板を液切りする場
合、基板表面のリンス液は、ガラス基板端から他方の基
板端へ向かって流されて液切りが行われる。即ち、周囲
とリンス液中の汚染物がリンス液中に凝集されながら基
板表面を流れ液切りされるので、シミの原因となる。特
に、ガラス基板の大型化により液切り面積が増大するた
め、汚染物の液体中への凝集は、避けられなくなり、パ
ターン欠陥、薄膜半導体の特性不良による表示不良の問
題があった。A conventional liquid draining device such as an air knife after the above-mentioned wet processing is used for draining a glass substrate for a thin film semiconductor device wet with a rinsing liquid. Then, the liquid is drained from the end of the glass substrate toward the other end of the substrate. That is, the contaminants in the surroundings and the rinsing liquid flow on the substrate surface while being agglomerated in the rinsing liquid and are drained, thereby causing stains. In particular, since the liquid drainage area increases due to an increase in the size of the glass substrate, aggregation of contaminants in the liquid cannot be avoided, and there has been a problem of display defects due to pattern defects and poor characteristics of the thin film semiconductor.
【０００６】これを解決する手段として、ウェット処理
部から液切り部へ短時間で搬送し、さらに効果を高める
ために傾斜搬送する装置が提案されている（特開平４−
３３７６３７号公報参照）。しかしながら、この装置で
は、短時間で液切りが実行出来るように工夫されている
が、それでも有限の時間が必要であり、エアーナイフを
用いているためリンス液中の汚染物を凝集しながら液切
りすることには変わりなく、特に基板サイズの大型化に
伴い液切りされる面積が広くなるため、シミが残り易く
なり、依然として問題が残る。As a means for solving this problem, an apparatus has been proposed in which the wafer is conveyed from the wet processing section to the liquid draining section in a short time, and is inclinedly conveyed to further enhance the effect (Japanese Patent Laid-Open No. Hei.
No. 337637). However, this device is designed so that draining can be performed in a short time, but it still requires a finite time, and the use of an air knife causes drainage while coagulating contaminants in the rinsing liquid. In particular, the area from which the liquid is drained increases as the size of the substrate increases, so that stains are likely to remain, and the problem still remains.
【０００７】本発明は、上記した問題などに鑑み成され
たものであって、その目的とするところは、第１に高精
度な洗浄などの処理プロセスを可能とする液切り装置を
提供することにあり、第２に洗浄、ないしエッチング処
理等のウェット処理後の汚染を改善する液切り装置を提
供することにあり、第３に薄膜半導体装置用の特に大型
ガラス基板を対象とした洗浄等の処理に好適な液切り装
置を提供することである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems and the like, and has as its object the first object of the present invention is to provide a liquid draining device which enables a processing process such as high-precision cleaning. Secondly, it is to provide a draining device for improving contamination after wet processing such as cleaning or etching processing, and thirdly, to provide cleaning for thin film semiconductor devices, particularly for large glass substrates. An object of the present invention is to provide a draining device suitable for processing.
【０００８】[0008]
【課題を解決するための手段】本発明に係る液切り装置
は、リンス液用スリット、乾燥ガス用スリットを具備し
た液切りユニットからリンス液、乾燥ガスを噴出しなが
ら液切りを行う点を特徴とし、これにより前記した目的
とする液切り装置を提供するものである。The liquid draining apparatus according to the present invention is characterized in that the liquid is drained while the rinsing liquid and the drying gas are jetted from a liquid draining unit provided with a rinsing liquid slit and a drying gas slit. Thus, the above-mentioned liquid draining device is provided.
【０００９】即ち、本発明は、ガラス基板を枚葉で搬送
する搬送系、及び基板の表裏に設けられた液切りユニッ
トからなり、搬送系上で基板を枚葉処理するウェット処
理装置の最終段リンス槽直後に用いる液切り装置に於い
て、前記液切りユニットからリンス液、乾燥ガスが噴出
することを特徴とする。また、液切りユニットは、同一
ユニットに設けられたリンス液用スリット、乾燥ガス用
スリットから構成され、リンス液、乾燥ガスがそれぞれ
のスリットから噴出することを特徴とする。That is, the present invention comprises a transport system for transporting a glass substrate by a single wafer and a liquid removal unit provided on the front and back of the substrate, and a final stage of a wet processing apparatus for processing a single substrate on the transport system. In a draining device used immediately after the rinsing tank, a rinsing liquid and a dry gas are jetted from the draining unit. Further, the liquid draining unit includes a rinsing liquid slit and a drying gas slit provided in the same unit, and the rinsing liquid and the drying gas are ejected from the respective slits.
【００１０】[0010]
【発明の実施の形態】次に、本発明について図面を参照
して詳細に説明する。図１は、本発明の第１の実施の形
態であり、液切り装置を大型のガラス基板の洗浄に適用
した例を説明する図であって、このうち図１（Ａ）は、
洗浄装置のリンス槽、液切り槽の全体図を示す図であ
り、図１（Ｂ）は、図１（Ａ）の液切りユニットの断面
及び、液切り状態を示す拡大詳細図である。Next, the present invention will be described in detail with reference to the drawings. FIG. 1 is a diagram illustrating a first embodiment of the present invention, in which an example in which a liquid removing device is applied to cleaning of a large-sized glass substrate is illustrated, and FIG.
FIG. 1B is a diagram illustrating an overall view of a rinse tank and a liquid drain tank of the cleaning device, and FIG. 1B is an enlarged detailed view illustrating a cross section of the liquid drain unit of FIG.
【００１１】この実施の形態に係る液切り装置を備えた
洗浄装置は、図１（Ａ）に示すように、ガラス基板１を
水平に搬送する搬送コロ４を備えた洗浄装置の最終段と
してのリンス槽５と第１の液切り槽６０、第２の液切り
槽６１から構成され、リンス槽５にはガラス基板１の上
下に備えた１組以上のリンスシャワー３により純水リン
スされた後、第１の液切り槽６０に搬送される。第１の
液切り槽６０は、第２の液切り槽６１に備えられた液切
りユニット２のリンス液用スリット７から噴出したリン
ス液が再付着しないための分離槽である。第２の液切り
槽６１は、槽の入り口近傍に、ガラス基板１の上下に１
対の液切りユニット２を具備し、液切りユニット２によ
り液切りが行われる。As shown in FIG. 1A, the cleaning device provided with a liquid draining device according to this embodiment is the last stage of a cleaning device provided with a transport roller 4 for transporting a glass substrate 1 horizontally. The rinse tank 5 is composed of a rinse tank 5, a first drain tank 60, and a second drain tank 61. The rinse tank 5 is rinsed with pure water by one or more sets of rinse showers 3 provided above and below the glass substrate 1. , And transferred to the first drain tank 60. The first drain tank 60 is a separation tank for preventing the rinsing liquid ejected from the rinsing liquid slit 7 of the rinsing liquid unit 2 provided in the second drain tank 61 from reattaching. The second liquid draining tank 61 is provided above and below the glass substrate 1 near the entrance of the tank.
A pair of draining units 2 is provided, and draining is performed by the draining unit 2.
【００１２】液切りユニット２は、図１（Ｂ）に示すよ
うに、リンス液用スリット７と乾燥ガス用スリット８か
ら成り、ガラス基板１と液切りユニット２のギャップ
は、乾燥ガス用スリット８の方をリンス液用スリット７
の部分よりギャップを小さくし、リンス液９が液切りさ
れたガラス基板１の表面に再付着しない構造となってお
り、リンス液用スリット７と乾燥ガス用スリット８は、
ガラス基板１に対して鋭角に噴出されるような角度に設
定する。なお、リンス液用スリット７と基板表面とのギ
ャップは５ｍｍで、基板との角度は４５°〜６０°、乾
燥ガス用スリット８と基板表面とのギャップは１〜２ｍ
ｍで、基板との角度は４５°〜６０°程度で良い。As shown in FIG. 1B, the liquid draining unit 2 comprises a rinsing liquid slit 7 and a drying gas slit 8, and the gap between the glass substrate 1 and the liquid discharging unit 2 is formed by the drying gas slit 8 The slit for rinsing liquid 7
The gap is made smaller than that of the part, so that the rinsing liquid 9 does not adhere again to the surface of the drained glass substrate 1. The rinsing liquid slit 7 and the dry gas slit 8
The angle is set so as to be ejected at an acute angle with respect to the glass substrate 1. The gap between the rinsing liquid slit 7 and the substrate surface is 5 mm, the angle with the substrate is 45 ° to 60 °, and the gap between the dry gas slit 8 and the substrate surface is 1 to 2 m.
m, the angle with the substrate may be about 45 ° to 60 °.
【００１３】リンス槽５でリンスされた基板の表面は、
リンス液９が付着した状態で第１液切り槽６０、第２液
切り槽６１に搬送される。液切りユニット２では、リン
ス液用スリット７からガラス基板表面に高純度の純水の
ようなリンス液が噴出されながら、同時に、乾燥ガス用
スリット８から噴出する乾燥ガスにより液切りが行われ
るため、液切り直前に純度の低いリンス液がガラス基板
１の表面に残らなく、リンス液９中に周囲の不純物が取
り込まれてシミ、汚染が残ることがない。リンス液用ス
リット７から噴出されるリンス液の圧力は、１ｋｇｆ／
ｃｍ2 程度で、乾燥ガス用スリット８から噴出される乾
燥ガスの圧力は、０．５〜１ｋｇｆ／ｃｍ2 程度で良
い。The surface of the substrate rinsed in the rinsing bath 5 is
The rinsing liquid 9 is conveyed to the first drain tank 60 and the second drain tank 61 with the rinsing liquid 9 attached. In the liquid draining unit 2, while the rinse liquid such as high-purity pure water is jetted from the rinse liquid slit 7 to the glass substrate surface, the liquid is drained by the dry gas jetted from the dry gas slit 8 at the same time. In addition, a low-purity rinsing liquid does not remain on the surface of the glass substrate 1 immediately before draining, and no impurities and surroundings are taken into the rinsing liquid 9 to leave stains and contamination. The pressure of the rinsing liquid ejected from the rinsing liquid slit 7 is 1 kgf /
In cm 2 or so, the pressure of the dry gas ejected from the drying gas slits 8 may be about 0.5~1kgf / cm 2.
【００１４】従って、本発明の液切り装置を用いると、
液切り時に、リンス液のガラス基板表面での不純物の凝
集によるシミ、汚染がなくなり、高精度の液切りが可能
となる。また、ＩＰＡ蒸気乾燥のように高価な装置、薬
品を用いなくても高精度の液切りが行え、パターン欠陥
を形成したり、残留した汚染物によりトランジスタ特性
の劣化をまたらし表示不良となることが低減し、歩留ま
り向上にも大きく寄与する。Therefore, when the draining device of the present invention is used,
During draining, stains and contamination due to aggregation of impurities of the rinsing liquid on the glass substrate surface are eliminated, and high-precision draining is possible. In addition, high-precision liquid drainage can be performed without using expensive equipment and chemicals such as IPA vapor drying, pattern defects are formed, and residual contaminants cause deterioration of transistor characteristics and display defects. , Which greatly contributes to improving the yield.
【００１５】次に、本発明の第２の実施の形態について
説明する。図２は、液切りユニットの断面、及び液切り
の状態を示す図である。液切りユニット２は、リンス液
用スリット７と乾燥ガス用スリット８、第２の乾燥ガス
用スリット８１から構成される。第２の乾燥ガス用スリ
ット８１は、第１の乾燥ガス用スリット８よりもガスラ
ス基板１に対して、鋭角に乾燥ガスが噴出されるように
傾斜させ、噴出出力を第２の乾燥ガス用スリット８１
を、第１の乾燥ガス用スリット８よりも大きくし、第１
の乾燥ガス用スリット８にエアーカーテンのような効果
を持たせ、リンス液９の跳ね返りをより高精度に制御で
きる構造となっている。なお、リンス液用スリット７の
基板との角度は４５°〜６０°、第１の乾燥ガス用スリ
ット８の基板との角度は６０°、第２の乾燥ガス用スリ
ット８１の基板との角度は４５°程度で良い。Next, a second embodiment of the present invention will be described. FIG. 2 is a diagram showing a cross section of the liquid drain unit and a state of liquid drain. The liquid draining unit 2 includes a rinse liquid slit 7, a dry gas slit 8, and a second dry gas slit 81. The second drying gas slit 81 is inclined such that the drying gas is jetted at an acute angle with respect to the gas lath substrate 1 more than the first drying gas slit 8, and the jetting output is set to the second drying gas slit. 81
Is larger than the first dry gas slit 8, and the first
The drying gas slit 8 has an effect like an air curtain, and the rebound of the rinsing liquid 9 can be controlled with higher precision. The angle of the rinse liquid slit 7 with the substrate is 45 ° to 60 °, the angle of the first dry gas slit 8 with the substrate is 60 °, and the angle of the second dry gas slit 81 with the substrate is It may be about 45 °.
【００１６】従って、シミ、汚染の残らない第１の実施
の形態以上に歩留まり良く高精度の液切りが可能となる
効果が得られる。Therefore, an effect is obtained in which a high-precision liquid removal can be performed with a higher yield than in the first embodiment in which stains and contamination remain.
【００１７】[0017]
【発明の効果】本発明に係る液切り装置は、以上詳記し
たとおり、洗浄、エッチング等のウェット処理後の液切
り槽で、純水のようなリンス液を流しながら、同時に乾
燥ガスで液切りを行うので、周囲やリンス液中の汚染が
ガラス基板表面に凝集し、シミ等が残らなく、より高精
度な液切りが可能となり、例えばシミ上に膜が形成され
た場合、密着性の低下により膜剥がれが生じ、パターン
異常となっていたが発生率が数％以下に減少する効果が
生じる。また、シミ状の汚染によるトランジスタ特性、
信頼性の劣化を低減する効果を生じる。As described in detail above, the liquid draining device according to the present invention is characterized in that a liquid rinse tank such as pure water flows in a liquid draining tank after wet processing such as washing and etching, and at the same time, a liquid is dried with a dry gas. Since the cutting is performed, contamination in the surroundings and in the rinsing liquid aggregates on the surface of the glass substrate, and stains and the like are not left, thereby enabling more accurate liquid cutting.For example, when a film is formed on the stain, the The lowering causes film peeling, resulting in a pattern abnormality, but has an effect of reducing the occurrence rate to several percent or less. In addition, transistor characteristics due to stain-like contamination,
This has the effect of reducing the deterioration of reliability.
【００１８】また、薄膜半導体装置用大型ガラス基板に
対しては、特に基板面積が大きいため、特に高度な液切
り性能が必要となる。本発明の液切り装置を用いること
により基板の幅が４００ｍｍを越えるような大型ガラス
基板に対しても液切り不良に起因する不良は見られず、
本発明の有効性が確認された。In addition, a large glass substrate for a thin film semiconductor device requires a particularly high liquid drainage performance because the substrate area is particularly large. By using the liquid draining device of the present invention, even a large glass substrate having a width of the substrate exceeding 400 mm, a defect due to liquid drainage failure is not seen,
The effectiveness of the present invention has been confirmed.
【図１】（Ａ）は本発明の第１の実施の形態の洗浄装置
の最終段の純水リンス槽、液切り槽の全体構造を示す
図、（Ｂ）は（Ａ）の液切りユニットの断面及び液切り
状態を示す詳細拡大図である。FIG. 1A is a view showing the overall structure of a pure water rinsing tank and a liquid draining tank at the final stage of a cleaning apparatus according to a first embodiment of the present invention, and FIG. 1B is a liquid draining unit of FIG. FIG. 3 is a detailed enlarged view showing a cross section and a liquid draining state.
【図２】本発明の第２の実施の形態の液切りユニットの
断面及び液切り状態を示す詳細拡大図である。FIG. 2 is a detailed enlarged view showing a cross section and a liquid draining state of a liquid draining unit according to a second embodiment of the present invention.
【図３】（Ａ）は従来のウェット処理装置の最終段の純
水リンス槽、液切り槽の全体構造を示す図、（Ｂ）は液
切りユニットの断面及び液切り状態を示す詳細拡大図で
ある。FIG. 3 (A) is a diagram showing the entire structure of a final-stage pure water rinsing tank and liquid drain tank of a conventional wet processing apparatus, and FIG. 3 (B) is a detailed enlarged view showing a cross section of the liquid drain unit and a liquid drain state. It is.
１ ガラス基板 ２ 液切りユニット ３ リンスシャワー ４ 搬送コロ ５ リンス槽 ６ 液切り槽 ６０ 第１液切り槽 ６１ 第２液切り槽 ７ リンス液用スリット ８ 第１の乾燥ガス用スリット ８１ 第２の乾燥ガス用スリット ９ リンス液 REFERENCE SIGNS LIST 1 glass substrate 2 liquid drain unit 3 rinse shower 4 transport roller 5 rinse tank 6 liquid drain tank 60 first liquid drain tank 61 second liquid drain tank 7 slit for rinse liquid 8 slit for first dry gas 81 second dry Gas slit 9 Rinse liquid
Claims (3)
び基板の表裏に設けられた液切りユニットからなり、該
搬送系上で基板を枚葉処理するウェット処理装置の最終
段リンス槽直後の液切り装置において、前記液切り装置
は、第１の液切り槽とこれに続いて設けられた第２の液
切り槽を有し、前記液切りユニットは第２の液切り槽の
入り口近傍に設けられ、前記液切りユニットからリンス
液、乾燥ガスが噴出し、リンス液噴出し口と乾燥ガス噴
出し口が独立し一体化していることを特徴とする基板の
液切り装置。1. A transfer system for transferring a glass substrate in a single wafer, and a liquid removal unit provided on the front and back of the substrate, and immediately after a final rinsing tank of a wet processing apparatus for performing single-wafer processing of the substrate on the transfer system. In the liquid draining device , the liquid draining device
Is a first liquid drainage tank and a second liquid provided subsequent thereto.
A drain tank, wherein the drain unit has a second drain tank.
A substrate liquid draining device provided near an entrance, wherein a rinse liquid and a dry gas are jetted from the liquid drain unit, and a rinse liquid jet port and a dry gas jet port are independent and integrated.
設けられたリンス液用スリットと乾燥ガス用スリットか
ら構成され、リンス液、乾燥ガスがそれぞれのスリット
から噴出することを特徴とする請求項１記載の基板の液
切り装置。2. The liquid draining unit comprises a rinsing liquid slit and a drying gas slit provided in the same unit, and the rinsing liquid and the drying gas are ejected from the respective slits. The apparatus for draining a substrate according to the above.
型ガラス基板であることを特徴とする請求項１または請
求項２記載の基板の液切り装置。3. The apparatus for draining a substrate according to claim 1, wherein the glass substrate is a large-sized glass substrate for a thin film semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7277328A JP2850806B2 (en) | 1995-10-25 | 1995-10-25 | Substrate drainer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7277328A JP2850806B2 (en) | 1995-10-25 | 1995-10-25 | Substrate drainer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09120951A JPH09120951A (en) | 1997-05-06 |
| JP2850806B2 true JP2850806B2 (en) | 1999-01-27 |
Family
ID=17582003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7277328A Expired - Fee Related JP2850806B2 (en) | 1995-10-25 | 1995-10-25 | Substrate drainer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2850806B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100758220B1 (en) * | 2005-10-20 | 2007-09-17 | 주식회사 케이씨텍 | Substrate cleaning device having multiple slit nozzle and cleaning method using same |
| KR101284680B1 (en) * | 2006-12-21 | 2013-07-16 | 주식회사 케이씨텍 | Steam cleaning system for subtrate |
| KR101217541B1 (en) * | 2010-08-13 | 2013-01-02 | (주)비테크 | Dual Air-Knife Injection device for uniform drying of a glass panel |
| JP6026163B2 (en) * | 2012-07-13 | 2016-11-16 | 東京エレクトロン株式会社 | Cleaning device, cleaning method and storage medium |
| KR20200022501A (en) | 2017-07-14 | 2020-03-03 | 레나 테크놀로지스 게엠베하 | Drying apparatus and substrate drying method |
| JP7677728B2 (en) * | 2021-06-22 | 2025-05-15 | 東京エレクトロン株式会社 | Substrate processing apparatus and liquid exchange method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04123532U (en) * | 1991-04-25 | 1992-11-09 | 日立電線株式会社 | Semiconductor substrate cleaning equipment |
-
1995
- 1995-10-25 JP JP7277328A patent/JP2850806B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09120951A (en) | 1997-05-06 |
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