JP2859043B2 - Semiconductor substrate heat treatment equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate heat treatment apparatus, and more particularly to a semiconductor substrate heat treatment apparatus having means for measuring the temperature of a semiconductor substrate from the outside of a quartz heating furnace by the amount of infrared radiation.

[0002]

2. Description of the Related Art FIG. 2 is a block diagram of a semiconductor substrate heat treatment apparatus showing an example of the prior art. As shown in FIG. 2, a conventional single-wafer semiconductor substrate heat treatment apparatus includes a quartz heating furnace 3 for housing a semiconductor substrate 6, an upper heater 1 and a lower heater 2 for heating the semiconductor substrate 6, 6, an infrared measuring device 4 for measuring the intensity of the infrared radiation radiated from the outside of the quartz heating furnace 3 and converting the temperature, and receiving the temperature information from the infrared measuring device 4 and comparing it with the set temperature, through the heater control line, It has a controller 9 for controlling the heater 1 and the lower heater 2.

FIG. 3 is a schematic partial sectional view for explaining a method for measuring the temperature of a semiconductor substrate. Next, details of the infrared measurement unit will be described with reference to FIG. here,
Inside the upper wall 3a and the lower wall 3b of the quartz heating furnace,
Assuming that the generated film 8 generated by the heat treatment of the semiconductor substrate performed in the past adheres, the infrared rays 5 radiated from the semiconductor substrate 6 pass through the generated film 8 and the lower wall 3b of the quartz heating furnace and are attenuated. I do. Only the attenuated infrared ray passing through the measurement slit 7 provided in the lower heater 2 is measured by the infrared ray meter 4. Then, the amount of the captured infrared rays is converted as the temperature of the semiconductor substrate 6.

[0004]

In this conventional semiconductor substrate heat treatment apparatus, the temperature measurement of the semiconductor substrate is converted from the measurement of the amount of radiated infrared rays from the semiconductor substrate transmitted through the quartz furnace wall and the generated film attached to the wall. Since the amount of generated film on the inner wall of the quartz heating furnace changes, the infrared transmittance at the time of transmission of the generated film changes, causing an error in the temperature measurement value and often causing the semiconductor substrate to be heat-treated. However, there is a problem that the characteristics described above cannot be obtained.

An object of the present invention is to provide a semiconductor substrate heat treatment apparatus capable of accurately measuring the temperature of a semiconductor substrate and obtaining desired characteristics.

[0006]

According to the present invention, there is provided a semiconductor substrate heat treatment apparatus, comprising: a quartz heating furnace for accommodating a semiconductor substrate; a heater disposed outside the quartz heating furnace; A controller for converting the temperature by the amount of infrared rays, a first measurement system for measuring infrared rays generated from the heater and passing through the quartz heating furnace with the infrared measuring instrument, and generated from the semiconductor substrate. A second measurement system for measuring infrared light with the infrared measurement device; and a switch for switching between the first measurement system and the second measurement system.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a block diagram of a semiconductor substrate heat treatment apparatus showing one embodiment of the present invention. This semiconductor substrate heat treatment apparatus focuses on a generated film attached to the inner wall of the quartz heating furnace 3,
The change in the optical transmittance of the amount of infrared light of the upper heating furnace 1 that passes through the generated film is measured, and the amount of infrared light emitted from the semiconductor substrate 6 is corrected based on the change rate to determine the temperature of the semiconductor substrate.

That is, as shown in FIG. 1, a measurement path using the upper heating furnace 1 as a light emitting part of infrared rays and an infrared measuring instrument 4 as a light receiving part, a path for measuring the infrared rays generated by the semiconductor substrate 6, and Switch 1 for switching between measurement paths
2 is provided.

Next, a measurement procedure using these measurement paths will be described. First, in order to prevent the reflected light from the heating furnace 3 made of quartz from being emitted by the lower heater 2 from being measured by the infrared measuring device 4, the lower heater control line switch 12 is opened and the lower heater 2 is stopped. After that, a constant heating signal is output from the controller 9 to the heater control line, and the upper heater 1 emits infrared light of a constant intensity. The infrared rays of a constant intensity emitted from the upper heating furnace 1 pass through the quartz heating furnace 3 and enter the infrared measuring device 4, where the infrared intensity is measured. The infrared intensity value measured by the infrared measuring device 4 is returned to the controller 9 in the same manner as a normal temperature measurement signal at the time of measuring the temperature of the semiconductor substrate. Compared with the amount of transmitted infrared light from the quartz heating furnace 3
Is calculated.

Next, the optical transmittance signal of the quartz heating furnace 3 is fed back to the infrared measuring device 4, and the switch 12 is switched to measure the amount of infrared rays generated from the quartz heating furnace 3. The infrared ray amount measured based on the transmittance of the quartz heating furnace having the stored film is corrected, and the temperature of the semiconductor substrate during the heat treatment is measured.

As described above, the change in the transmittance of the quartz heating furnace 3 is measured by the film formed during the heat treatment of the semiconductor substrate, and the correction of the processing temperature of the semiconductor substrate enables the measurement without any error. Characteristics are obtained. In addition, there is an advantage that the time for replacing the heating furnace can be known from the infrared transmittance.

[0012]

As described above, according to the present invention, the infrared ray generated by the upper heater is transmitted to the quartz heating furnace, and a measurement path for measuring the optical transmittance of the quartz heating furnace is provided. By measuring the transmittance of the inner wall of the furnace based on the amount of generated film attached, correcting the amount of infrared rays generated from the semiconductor substrate by the transmittance, and measuring the temperature of the semiconductor substrate, it is possible to accurately measure the temperature at the time of heat treatment. There is an effect that a semiconductor substrate having the following characteristics can be obtained.

[Brief description of the drawings]

FIG. 1 is a block diagram of a semiconductor substrate heat treatment apparatus showing one embodiment of the present invention.

FIG. 2 is a block diagram of a semiconductor substrate heat treatment apparatus showing an example of the related art.

FIG. 3 is a schematic partial cross-sectional view illustrating a method for measuring the temperature of a semiconductor substrate.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Upper heater 2 Lower heater 3 Quartz heating furnace 4 Infrared measuring device 6 Semiconductor substrate 9 Controller 12 Switch

Claims (1)

(57) [Claims] A quartz heating furnace for accommodating a semiconductor substrate;
A heater arranged outside the quartz heating furnace, an infrared measuring instrument for measuring infrared rays, a controller for converting the temperature by the amount of infrared rays, and infrared rays generated from the heater and transmitted through the quartz heating furnace. A first measurement system for measuring infrared light from the semiconductor substrate with the infrared measurement device, a second measurement system for measuring infrared light generated from the semiconductor substrate with the infrared measurement device, the first measurement system, and the second measurement system. A semiconductor substrate heat treatment apparatus, comprising: