JP2875553B2 - Method for Preventing Oxidation-Reduction Reaction Occurrence and Processing Apparatus Used Therefor - Google Patents
Method for Preventing Oxidation-Reduction Reaction Occurrence and Processing Apparatus Used ThereforInfo
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- JP2875553B2 JP2875553B2 JP23559589A JP23559589A JP2875553B2 JP 2875553 B2 JP2875553 B2 JP 2875553B2 JP 23559589 A JP23559589 A JP 23559589A JP 23559589 A JP23559589 A JP 23559589A JP 2875553 B2 JP2875553 B2 JP 2875553B2
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は酸化還元反応発生の防止方法およびそれに使
用する処理装置に係り、特に、2種以上の異なる導電性
膜が電気的に接続された構造を有するデバイスの製造時
の歩留り向上に好適な酸化還元反応発生の防止方法およ
びそれに使用する処理装置に関する。Description: TECHNICAL FIELD The present invention relates to a method for preventing the occurrence of a redox reaction and a processing apparatus used for the method, and in particular, two or more different conductive films are electrically connected to each other. The present invention relates to a method for preventing the occurrence of an oxidation-reduction reaction suitable for improving the yield during the manufacture of a device having a structure, and a processing apparatus used for the method.
少なくとも2種以上の異なる導電性膜からなる多層膜
をアルカリ性溶液中に浸漬させる操作を含む工程の代表
的なものとして、ICや薄膜トランジスタ等の製造に用い
られているホトリソグラフィ工程がある。この工程は、
例えば「超LSIテクノロジー」(総研出版)第278〜第28
3項記載のように、第5図および下記記述に示す工程か
らなっている。すなわち、 (a)基板1上に形成した被加工物質15上にレジスト層
4を形成する工程、 (b)マスク5を介してレジスト4に光をあててレジス
ト4を感光させる工程、 (c)(b)で得られた基板を、(c′)に示す現像槽
6と現像液7とからなる現像装置を用いて現像し、所定
のレジストパターンを得る工程、 (d)エッチングによって被加工物質15をレジストパタ
ーンと同形状に加工する工程、 (e)レジスト4を剥離する工程 からなっている。A typical example of a process including an operation of immersing a multilayer film including at least two or more different conductive films in an alkaline solution includes a photolithography process used for manufacturing ICs, thin film transistors, and the like. This step is
For example, "Super LSI Technology" (Souken Shuppan) 278-28
As described in item 3, the method includes the steps shown in FIG. 5 and the following description. That is, (a) a step of forming a resist layer 4 on a workpiece 15 formed on a substrate 1, (b) a step of exposing the resist 4 to light by irradiating the resist 4 with light through a mask 5, and (c). Developing the substrate obtained in (b) using a developing device comprising a developing tank 6 and a developing solution 7 shown in (c ') to obtain a predetermined resist pattern; and (d) etching a substance to be processed by etching. And (e) stripping the resist 4.
ここで、上記多層膜をアルカリ性溶液に浸漬する工程
は(c)工程であり、現像液7としてはpH12〜13のアル
カリ性溶液が広く用いられている。また、(c′)の現
像装置としては、第6図(a)に示すように、現像槽6
の中に現像液7を満たし、その中に処理すべき基板1を
浸漬して現像する浸漬装置と、同図(b)に示すよう
に、ノズル16から現像液7を基板1に噴射させて現像を
行うスプレー装置とがある。Here, the step of immersing the multilayer film in an alkaline solution is the step (c). As the developing solution 7, an alkaline solution having a pH of 12 to 13 is widely used. As shown in FIG. 6A, the developing device of FIG.
Is filled with the developing solution 7, and the substrate 1 to be processed is immersed in the developing device, and the developing device 7 is sprayed from the nozzle 16 onto the substrate 1 as shown in FIG. There is a spray device for developing.
ここでは、インジウム(In)とすず(Sn)の酸化物か
らなるITO(Indium Tin Oxide)膜とアルミニウム(A
l)膜とが電気的に接続された構造を有する基板をアル
カリ性現像液に浸漬させた場合を例として、従来技術の
問題点について述べる。Here, an ITO (Indium Tin Oxide) film made of an oxide of indium (In) and tin (Sn) and an aluminum (A)
l) Problems of the prior art will be described by taking, as an example, a case where a substrate having a structure electrically connected to a film is immersed in an alkaline developer.
電気的に接続された状態にあるITO膜とAl膜とがアル
カリ性溶液に接した場合、イオン化傾向の差により、両
膜間に電位差が生じ、Alが酸化され、ITOが還元される
現象が発生し、この現象によって、ITO膜中の酸素が離
脱してITO膜の透過率低下や抵抗増大等の問題が生起す
る。また、さらに還元反応が進行すると、InやSnの金属
粉が析出して表面の凹凸が激しくなり、膜厚も薄くな
る。また、析出した金属粉は基板上に付着しているのみ
であるため、水洗等により容易に剥離してしまうという
問題もあった。When the electrically connected ITO film and Al film come into contact with an alkaline solution, a difference in ionization tendency causes a potential difference between the two films, causing the Al to be oxidized and the ITO to be reduced. However, due to this phenomenon, oxygen in the ITO film is released, causing problems such as a decrease in the transmittance of the ITO film and an increase in resistance. Further, when the reduction reaction further proceeds, metal powder of In or Sn precipitates, the surface irregularities become severe, and the film thickness becomes thin. In addition, since the deposited metal powder only adheres to the substrate, there is a problem that the metal powder is easily peeled off by washing with water or the like.
本発明の目的は、上記従来技術の有していた課題、す
なわち電気的に接続された2種以上の異なる導電性膜を
アルカリ性溶液に接触させた場合に生ずる酸化還元反応
の発生を防止する方法、および、その方法の実施に用い
る処理装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for preventing the occurrence of a redox reaction which occurs when two or more electrically conductive films which are electrically connected to each other are brought into contact with an alkaline solution. , And a processing apparatus used for implementing the method.
上記目的は、処理に用いるアルカリ性溶液中に酸化剤
を添加することによって達成することができる。ここ
で、上記酸化剤としては、酸素、オゾン、過酸化水素
水、重クロム酸アンモニウム、次亜塩素酸ソーダが有効
である。The above object can be achieved by adding an oxidizing agent to the alkaline solution used for the treatment. Here, as the oxidizing agent, oxygen, ozone, aqueous hydrogen peroxide, ammonium bichromate, and sodium hypochlorite are effective.
アルカリ性溶液中に上記酸化剤を添加することによっ
て、上述の2種以上の異なる導電性膜間に生ずる酸化還
元反応の発生を抑制することができ、該反応の進行によ
って生ずる導電性膜の損傷、変質等を防止することがで
きる。By adding the oxidizing agent to the alkaline solution, it is possible to suppress the occurrence of the oxidation-reduction reaction occurring between the two or more different conductive films described above, and to damage the conductive film caused by the progress of the reaction, Deterioration and the like can be prevented.
以下、本発明の酸化還元反応発生の防止方法およびそ
れに使用する処理装置について、実施例によって具体的
に説明する。Hereinafter, the method for preventing the occurrence of the oxidation-reduction reaction of the present invention and the processing apparatus used for the method will be specifically described with reference to examples.
実施例 1 本発明の酸化還元反応発生の防止方法をホトリソグラ
フィ工程に適用した場合の一実施例について第1図によ
って説明する。Embodiment 1 An embodiment in which the method for preventing the occurrence of an oxidation-reduction reaction according to the present invention is applied to a photolithography step will be described with reference to FIG.
すなわち、本発明の酸化還元反応発生の防止方法を用
いたホトリソグラフィ工程は (a)ITO膜2とAl膜3とが電気的に接続されてなる多
層膜を積層した基板1上にレジスト4を塗布する工程、 (b)(a)で得られた基板1に、マスク5を介して、
光をあて、レジスト4を感光させる工程、 (c)(b)で得られた基板1を(c′)に示す現像液
7を満たした現像槽6に酸素を含むガス8を導入する構
成の現像装置を用いて現像を行い、所定のレジストパタ
ーンを得る工程、 (d)エッチングによりAl膜3をレジストパターンと同
形状に加工する工程、 (e)レジストを剥離する工程 からなり、本発明の方法および処理装置は(c)の工程
に適用される。That is, the photolithography process using the method for preventing the occurrence of a redox reaction of the present invention comprises the steps of: (a) forming a resist 4 on a substrate 1 on which a multilayer film in which an ITO film 2 and an Al film 3 are electrically connected is laminated; Coating step (b) on the substrate 1 obtained in (a) via a mask 5
(C) exposing the resist 4 to light, and (c) introducing a gas 8 containing oxygen into a developing tank 6 filled with a developing solution 7 shown in (c ′). The present invention comprises the steps of: developing using a developing device to obtain a predetermined resist pattern; (d) processing the Al film 3 into the same shape as the resist pattern by etching; and (e) removing the resist. The method and the processing apparatus are applied to the step (c).
ここで、(c′)に示した現像装置の一例を第2図に
よって説明すると、本装置は、現像液7を満たした予備
槽10と、微小泡を発生させるためのバブラー13と、予備
槽10を振動させるための超音波装置12とからなる系と、
現像槽6およひポンプ11とから構成されている。また、
予備槽10にはバブラー13を介して酸素を含む細かい泡9
が供給され、この泡9は超音波装置12によりさらに細泡
化される。このようにして大量の酸素を含ませた状態の
現像液7をポンプ11によって現像槽6本体に移送する。Here, an example of the developing device shown in (c ') will be described with reference to FIG. 2. This device comprises a preliminary tank 10 filled with a developer 7, a bubbler 13 for generating fine bubbles, and a preliminary tank. A system consisting of an ultrasonic device 12 for vibrating 10 and
It comprises a developing tank 6 and a pump 11. Also,
The preliminary tank 10 contains fine bubbles 9 containing oxygen via a bubbler 13.
The foam 9 is further finely foamed by the ultrasonic device 12. Thus, the developing solution 7 containing a large amount of oxygen is transferred to the main body of the developing tank 6 by the pump 11.
上記の装置を使用し、東京応化社製アルカリ現像液
(商品名:DE−3)を水と1:1に調合した液30に酸素を
3/min混入した現像液中に第1図(e)に示すような
ITO膜2とAl膜3とが電気的に接続された構成の基板を
浸漬したとき、酸化還元反応は生起せず、双方の膜に欠
陥の発生は認められなかった。FIG. 1 (e) shows an example in which a developer prepared by mixing oxygen with a solution 30 prepared by mixing a 1: 1 alkali developer (trade name: DE-3) manufactured by Tokyo Ohka Co., Ltd. )
When the substrate having the structure in which the ITO film 2 and the Al film 3 were electrically connected was immersed, no oxidation-reduction reaction occurred, and no defects were found in both films.
また、上記酸素の代わりにオゾンを用いた場合にも同
様な結果が得られた。Similar results were obtained when ozone was used instead of oxygen.
実施例 2 第3図に、本発明方法の実施に用いる処理装置とし
て、酸素または酸素を含むガスを含有させた現像液のス
プレーによる現像装置の一例を示す。Embodiment 2 FIG. 3 shows an example of a developing apparatus using a spray of a developing solution containing oxygen or a gas containing oxygen as a processing apparatus used for carrying out the method of the present invention.
本装置はノズル16と、現像液7と、現像液7を貯蔵す
る予備槽10と、酸素または酸素を含むガス8とから構成
されており、現像液7はポンプまたはガスによる加圧に
よってノズル16に送られ、また、酸素または酸素を含む
ガス8もノズル16に送られ、現像液7と混合されてノズ
ル16から基板1にスプレーされる。The apparatus comprises a nozzle 16, a developing solution 7, a reserve tank 10 for storing the developing solution 7, and a gas 8 containing oxygen or oxygen. Further, oxygen or gas 8 containing oxygen is also sent to the nozzle 16, mixed with the developing solution 7 and sprayed from the nozzle 16 onto the substrate 1.
上記装置を用い、現像液としてDE−3:水=1:1の混合
液を、ガスとして酸素を用いて、第1図(e)に示す構
成の基板を処理した場合、酸化還元反応の発生によるIT
O膜やAl膜の欠陥は認められなかった。When a substrate having the structure shown in FIG. 1 (e) is processed using the above apparatus and a mixed solution of DE-3: water = 1: 1 as a developing solution and oxygen as a gas, an oxidation-reduction reaction occurs. IT by
No defects were found in the O film or Al film.
実施例 3 アルカリ性溶液に添加する酸化剤として酸素やオゾン
以外の物質を用いた場合の例について、第4図によって
説明する。Embodiment 3 An example in which a substance other than oxygen or ozone is used as an oxidizing agent added to an alkaline solution will be described with reference to FIG.
DE−3:水=1:1に調合した液1に過酸化水素水1mlま
たは次亜塩素酸ソーダ4mlまたは重クロム酸2gを添加し
た現像液7を現像槽6に満たし、第1図(e)に示す構
成の基板1を浸漬させた場合、酸化還元反応は生起せ
ず、膜の損傷はなかった。また、このときの現像液の現
像性は上記酸化剤を添加しない場合と全く同等であっ
た。なお、上記混合液をスプレー法による現像装置に用
いた場合にも同様の結果が得られた。The developing tank 6 was filled with a developing solution 7 in which 1 ml of hydrogen peroxide solution, 4 ml of sodium hypochlorite or 2 g of dichromic acid was added to the liquid 1 prepared as DE-3: water = 1: 1, and FIG. When the substrate 1 having the structure shown in (1) was immersed, no oxidation-reduction reaction occurred and there was no damage to the film. Further, the developability of the developer at this time was exactly the same as that when the oxidizing agent was not added. Similar results were obtained when the above-mentioned mixed solution was used in a developing device by a spray method.
なお、上記実施例においては、導電性膜がAl膜とITO
膜、アルカリ性溶液が現像液の場合の例について説明し
たが、他の導電性膜およびアルカリ性溶液例えば剥離液
あるいは洗浄液に適用した場合にも同様の結果が得られ
た。In the above embodiment, the conductive film is made of an Al film and an ITO film.
Although an example in which the film and the alkaline solution are a developer is described, similar results were obtained when the film and the alkaline solution were applied to an alkaline solution such as a stripper or a cleaning solution.
以上述べてきたように、電気的に接続された2種以上
の異なる導電性膜をアルカリ性溶液と接触させる場合
に、該アルカリ性溶液に酸化剤を添加する手段を講ずる
ことによって、従来技術の有していた課題を解決して、
酸化還元反応の発生を防止する方法およびその処理装置
を提供することができた。これによって、2種以上の異
なる導電性膜が電気的に接続された構造を有するデバイ
スの製造において、製造歩留りを向上させることができ
た。As described above, when two or more different electrically conductive films that are electrically connected to each other are brought into contact with an alkaline solution, by taking measures for adding an oxidizing agent to the alkaline solution, the conventional technology can be used. To solve the problem
A method for preventing the occurrence of an oxidation-reduction reaction and a processing apparatus therefor can be provided. As a result, in the manufacture of a device having a structure in which two or more different conductive films are electrically connected, the manufacturing yield can be improved.
第1図は本発明の酸化還元反応発生の防止方法を用いた
ホトリソグラフィ工程の手順を示す図、第2図は酸素を
含むガスを現像液に導入する機構を備えた本発明処理装
置(浸漬法による現像装置)の構成を示す図、第3図は
酸素を含むガスを現像液に導入する機構を備えた本発明
処理装置(スプレー法による現像装置)の構成を示す
図、第4図は酸素やオゾン以外の酸化剤を現像液に添加
した場合の本発明処理装置(浸漬法による現像装置)の
構成を示す図、第5図は従来のホトリソグラフィ工程の
手順を示す図、第6図は従来技術の処理装置(現像装
置)の構成を示す図である。 1……基板、2……ITO膜 3……Al膜、4……レジスト 5……マスク、6……現像槽 7……現像液、8……ガス 9……泡、10……予備槽 11……ポンプ、12……超音波装置 13……バブラー、14……酸化剤 15……被加工物質、16……ノズルFIG. 1 is a view showing a procedure of a photolithography step using the method for preventing the occurrence of an oxidation-reduction reaction according to the present invention, and FIG. 2 is a processing apparatus of the present invention having a mechanism for introducing a gas containing oxygen into a developer (immersion). FIG. 3 is a view showing the structure of a developing apparatus by a spray method, FIG. 3 is a view showing the structure of a processing apparatus of the present invention (developing apparatus by a spray method) provided with a mechanism for introducing a gas containing oxygen into a developing solution, and FIG. FIG. 5 is a view showing the configuration of a processing apparatus of the present invention (developing apparatus using an immersion method) when an oxidizing agent other than oxygen or ozone is added to a developing solution. FIG. 5 is a view showing a conventional photolithography process, and FIG. FIG. 1 is a diagram showing a configuration of a processing device (developing device) according to the related art. DESCRIPTION OF SYMBOLS 1 ... Substrate 2, 2 ... ITO film 3 ... Al film, 4 ... Resist 5 ... Mask, 6 ... Development tank 7 ... Development liquid, 8 ... Gas 9 ... Bubbles, 10 ... Preliminary tank 11 Pump, 12 Ultrasonic device 13 Bubbler, 14 Oxidizing agent 15 Work material, 16 Nozzle
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高野 隆男 神奈川県横浜市戸塚区吉田町292番地 株式会社日立製作所生産技術研究所内 (72)発明者 中谷 光雄 神奈川県横浜市戸塚区吉田町292番地 株式会社日立製作所生産技術研究所内 (72)発明者 富田 好文 千葉県茂原市早野3300番地 株式会社日 立製作所茂原工場内 (72)発明者 笹野 晃 千葉県茂原市早野3300番地 株式会社日 立製作所茂原工場内 (72)発明者 谷口 秀明 千葉県茂原市早野3300番地 株式会社日 立製作所茂原工場内 (56)参考文献 特開 昭63−284824(JP,A) 特開 平2−310381(JP,A) 特開 平1−151237(JP,A) 特開 昭59−104132(JP,A) 実開 昭64−55926(JP,U) (58)調査した分野(Int.Cl.6,DB名) H01L 21/306 - 21/3063 H01L 21/308 H01L 21/027 H01L 21/304 H01L 21/3205 H01L 21/321 H01L 21/28 - 21/288 H01L 21/44 - 21/445 C23F 1/00 - 3/06 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Takao Takano 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Manufacturing Research Laboratory, Hitachi, Ltd. (72) Mitsuo Nakatani 292, Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Prefecture Stock (72) Inventor Yoshifumi Tomita 3300 Hayano, Mobara-shi, Chiba Prefecture Inside Mobara Plant, Hitachi, Ltd. (72) Inventor Akira Sasano 3300, Hayano, Mobara-shi, Chiba Prefecture Mobara Plant, Hitachi, Ltd. (72) Inventor Hideaki Taniguchi 3300 Hayano, Mobara City, Chiba Pref. Inside the Mobara Plant, Hitachi, Ltd. (56) References JP-A-63-284824 (JP, A) JP-A-2-310381 (JP, A) JP-A-1-151237 (JP, A) JP-A-59-104132 (JP, A) JP-A-64-55926 (JP, U) (58) t.Cl. 6, DB name) H01L 21/306 - 21/3063 H01L 21/308 H01L 21/027 H01L 21/304 H01L 21/3205 H01L 21/321 H01L 21/28 - 21/288 H01L 21/44 - 21/445 C23F 1/00-3/06
Claims (5)
気的に接続した状態でアルカリ性溶液に接触させたとき
に該アルカリ性溶液を介して生ずる上記導電性膜の酸化
還元反応を、該アルカリ性溶液に酸化剤を添加すること
により低減することを特徴とする酸化還元反応発生の防
止方法。1. An oxidation-reduction reaction of said conductive film which occurs through said alkaline solution when at least two or more different conductive films are brought into contact with said alkaline solution in a state of being electrically connected to said alkaline solution. A method for preventing the occurrence of an oxidation-reduction reaction, characterized in that the oxidation-reduction reaction is reduced by adding an oxidant.
ンジウムおよびすずの酸化物を主成分とする透明導電膜
であり、他方がアルミニウムを主成分とする金属膜であ
ることを特徴とする特許請求の範囲第1項記載の酸化還
元反応発生の防止方法。2. The method according to claim 1, wherein one of the two or more different conductive films is a transparent conductive film mainly containing indium and tin oxide, and the other is a metal film mainly containing aluminum. The method for preventing occurrence of an oxidation-reduction reaction according to claim 1.
液、ホトレジスト剥離液あるいはアルカリ性洗浄液であ
ることを特徴とする特許請求の範囲第1項記載の酸化還
元反応発生の防止方法。3. The method according to claim 1, wherein said alkaline solution is a photoresist developing solution, a photoresist stripping solution or an alkaline cleaning solution.
水、重クロム酸アンモニウム、次亜塩素酸ソーダの中の
少なくともいずれか1種であることを特徴とする特許請
求の範囲第1項記載の酸化還元反応発生の防止方法。4. The method according to claim 1, wherein said oxidizing agent is at least one of oxygen, ozone, aqueous hydrogen peroxide, ammonium bichromate, and sodium hypochlorite. The method for preventing the occurrence of the oxidation-reduction reaction as described above.
気的に接続した状態でアルカリ性溶液に接触させて処理
を行う装置において、上記アルカリ性溶液に酸化剤を添
加する機構を備えていることを特徴とする酸化還元反応
発生の防止方法の実施に使用する処理装置。5. An apparatus for performing treatment by bringing at least two or more different conductive films into contact with an alkaline solution in an electrically connected state, comprising a mechanism for adding an oxidizing agent to the alkaline solution. A processing apparatus used for implementing a method for preventing the occurrence of a redox reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23559589A JP2875553B2 (en) | 1989-09-13 | 1989-09-13 | Method for Preventing Oxidation-Reduction Reaction Occurrence and Processing Apparatus Used Therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23559589A JP2875553B2 (en) | 1989-09-13 | 1989-09-13 | Method for Preventing Oxidation-Reduction Reaction Occurrence and Processing Apparatus Used Therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03101129A JPH03101129A (en) | 1991-04-25 |
| JP2875553B2 true JP2875553B2 (en) | 1999-03-31 |
Family
ID=16988331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23559589A Expired - Lifetime JP2875553B2 (en) | 1989-09-13 | 1989-09-13 | Method for Preventing Oxidation-Reduction Reaction Occurrence and Processing Apparatus Used Therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2875553B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4015823B2 (en) * | 2001-05-14 | 2007-11-28 | 株式会社東芝 | Alkali developer manufacturing method, alkali developer, pattern forming method, resist film peeling method, and chemical solution coating apparatus |
-
1989
- 1989-09-13 JP JP23559589A patent/JP2875553B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03101129A (en) | 1991-04-25 |
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