JP2880262B2 - Wafer holding device - Google Patents
Wafer holding deviceInfo
- Publication number
- JP2880262B2 JP2880262B2 JP16993890A JP16993890A JP2880262B2 JP 2880262 B2 JP2880262 B2 JP 2880262B2 JP 16993890 A JP16993890 A JP 16993890A JP 16993890 A JP16993890 A JP 16993890A JP 2880262 B2 JP2880262 B2 JP 2880262B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- wafer
- suction
- pipe
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ウエハの超微細加工を施す、シンクロトロ
ン放射光を光源とするウエハ保持装置に関するものであ
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer holding apparatus for performing ultra-fine processing of a wafer and using synchrotron radiation as a light source.
半導体製造装置において、マスクパターンをウエハに
転写する際のウエハ保持装置としては、該ウエハの裏面
を真空吸着して保持する真空吸着式ウエハ保持装置(た
とえば、特公平1−14703号公報)がよく用いられてい
る。In a semiconductor manufacturing apparatus, as a wafer holding device for transferring a mask pattern onto a wafer, a vacuum suction type wafer holding device (for example, Japanese Patent Publication No. 1-14703) that vacuum-suctions and holds the back surface of the wafer is often used. Used.
第5図(A),(B)はそれぞれ真空吸着式ウエハ保
持装置の一例を示す図である。5 (A) and 5 (B) are diagrams each showing an example of a vacuum suction type wafer holding device.
この真空吸着式ウエハ保持装置は、その裏面を真空吸
着することによりウエハ(不図示)を保持する保持台40
1と、前記ウエハを真空吸着するための排気ポンプ406
と、排気ポンプ406と後述する吸引管408とを接続する配
管404と、配管404の排気ポンプ406と保持台401との間に
設けられているバルブ407と、配管404のバルブ407と保
持台401との間に設けられている、配管404内の圧力と導
入管411から導入される外気の圧力(以下、「外気圧」
と称する。)との差圧力を検出する圧力センサ405と、
圧力センサ405の出力信号により、該出力信号が示す差
圧力が所定の値よりも大きくなったことを確認すると、
次の工程へ進ませる指示信号(たとえば、この真空吸着
式ウエハ保持装置をウエハの露光位置まで進ませる指示
信号)を出力する制御回路410とを有する。This vacuum suction type wafer holding device is configured to hold a wafer (not shown) by suctioning a back surface of the wafer by vacuum suction.
1 and an exhaust pump 406 for vacuum-sucking the wafer
A pipe 404 connecting the exhaust pump 406 and a suction pipe 408 described later; a valve 407 provided between the exhaust pump 406 of the pipe 404 and the holding base 401; a valve 407 of the pipe 404 and the holding base 401 Between the pressure in the pipe 404 and the pressure of the outside air introduced from the introduction pipe 411 (hereinafter referred to as “outside pressure”).
Called. A pressure sensor 405 for detecting the pressure difference between
When the output signal of the pressure sensor 405 confirms that the differential pressure indicated by the output signal has become larger than a predetermined value,
And a control circuit 410 for outputting an instruction signal for proceeding to the next step (for example, an instruction signal for proceeding the vacuum suction type wafer holding device to a wafer exposure position).
ここで、保持台401は、真空吸着された前記ウエハの
平坦度を保つために平面仕上げされている吸着面402
と、吸着面402の中心部に1個および吸着面402に刻まれ
た2本の同心円状の溝4091,4092にそれぞれ4個ずつ
(第4図(A)図示上下と左右)設けられている吸引口
403と、各吸引口403と配管404とを接続する吸引管408と
を備えている。また、バルブ407は、閉じた状態では配
管404内と外部空間とを連通させ、開いた状態では配管4
04内と排気ポンプ406とを連通させるものである。Here, the holding table 401 has a suction surface 402 which is flat-finished to maintain the flatness of the vacuum-sucked wafer.
If provided one by one and two each of four in the grooves 409 1, 409 2 concentric engraved on the suction surface 402 in the center of the suction surface 402 (FIG. 4 (A) shown vertically and horizontally) Suction port
403, and a suction pipe 408 connecting each suction port 403 and the pipe 404. The valve 407 communicates the inside of the pipe 404 with the external space when closed, and the pipe 4 when opened.
04 and the exhaust pump 406 are communicated.
この真空吸着式ウエハ保持装置では、真空吸着される
ウエハは、保持台401の吸着面402と接触する位置まで公
知の搬送ハンド(不図示)により搬送されてくる。その
後、バルブ407が開かれて、前記搬送されてきたウエハ
と吸着面402および吸着面402に刻まれた2本の同心円状
の溝4091,4092とにより形成される空間(以下、「密閉
空間」と称する)。内にある気体が、各吸引口403,吸引
管408および配管404を介して排気ポンプ406で排出され
ることにより、前記ウエハの裏面が真空吸着される。こ
のとき、圧力センサ405は、配管404内の圧力と外気圧と
の差圧力を検出し、該差圧力を示す信号を制御回路410
に出力する。制御回路410は、圧力センサ405の出力信号
が示す差圧力が所定値よりも大きくなったことを確認す
ると前記指示信号を出力する。In this vacuum suction type wafer holding device, the wafer to be vacuum-sucked is transferred to a position where it comes into contact with the suction surface 402 of the holding table 401 by a known transfer hand (not shown). Thereafter, the valve 407 is opened, two concentric grooves 409 1 engraved on the suction surface 402 and suction surface 402 and the wafer that has been the transfer, 409 2 and a space formed by (hereinafter, "closed Space "). The gas inside is exhausted by the exhaust pump 406 through the respective suction ports 403, the suction pipe 408, and the pipe 404, so that the back surface of the wafer is vacuum-adsorbed. At this time, the pressure sensor 405 detects a pressure difference between the pressure in the pipe 404 and the outside air pressure, and outputs a signal indicating the pressure difference to the control circuit 410.
Output to The control circuit 410 outputs the instruction signal when confirming that the differential pressure indicated by the output signal of the pressure sensor 405 has become larger than a predetermined value.
一方、前記ウエハの真空吸着を解除する場合には、バ
ルブ407が閉じられて、配管404内に外気が送り込まれ
る。On the other hand, when releasing the vacuum suction of the wafer, the valve 407 is closed, and outside air is sent into the pipe 404.
しかしながら、上記の真空吸着式ウエハ保持装置で
は、圧力センサ405の取付場所が配管404のバルブ407と
保持台401との間であるため、現在実用化されている遠
紫外光などを光源とする露光装置で行われている程度の
微細加工では問題ないが、シンクロトロン放射光を光源
とするX線露光装置(たとえば、特願昭63−252991号)
を用いて前記ウエハに超微細加工を施す場合などでは、
以下に示す理由により、歩留まりの低下および生産性の
低下を招くという問題が新たに生じた。However, in the above-mentioned vacuum suction type wafer holding apparatus, since the mounting position of the pressure sensor 405 is between the valve 407 of the pipe 404 and the holding table 401, the exposure using a currently used deep ultraviolet light or the like as a light source. X-ray exposure apparatus using synchrotron radiation as a light source (for example, Japanese Patent Application No. 63-252991), although there is no problem with the fine processing performed by the apparatus.
In the case of performing ultra-fine processing on the wafer using
For the following reasons, a new problem has arisen in that the yield and the productivity are reduced.
(1)圧力センサ405で検出した配管404内の圧力は、配
管404および吸引管408の構造が実際には複雑であるた
め、前記密閉空間内の圧力との相違が生じる。(1) The pressure in the pipe 404 detected by the pressure sensor 405 differs from the pressure in the closed space because the structures of the pipe 404 and the suction pipe 408 are actually complicated.
(2)前記差圧力は、この真空吸着式ウエハ保持装置が
置かれている空間の雰囲気およびウエハの裏面の状態に
よって違ってくるため、前記差圧力を高い精度で求める
ことは非常に困難であり、圧力センサ405で検出した差
圧力から前記密閉空間内の圧力を正確に推定することは
容易でない。(2) Since the differential pressure differs depending on the atmosphere in the space where the vacuum suction type wafer holding device is placed and the state of the back surface of the wafer, it is very difficult to obtain the differential pressure with high accuracy. It is not easy to accurately estimate the pressure in the closed space from the differential pressure detected by the pressure sensor 405.
(3)上記理由により前記密閉空間内の圧力を正確に推
定することは容易でないため、圧力センサ405で検出し
た前記差圧力が十分小さくなったのちに次の工程へ進ま
せざるをえず、最大吸着力が過大となり、真空吸着され
ているウエハにわずかな歪を発生させるが、該ウエハに
超微細加工を施す場合には、該ウエハに生じるわずかな
歪でもパターン転写精度の劣化を招くので、歩留まりの
低下を招く。さらに、ウエハの吸着動作に余分な時間が
かかり、生産性の低下を招くという問題も生じる。(3) Because it is not easy to accurately estimate the pressure in the closed space for the above reason, the process must proceed to the next step after the differential pressure detected by the pressure sensor 405 becomes sufficiently small. The maximum suction force becomes excessive, causing a slight distortion on the wafer that is being vacuum-sucked. However, when ultra-fine processing is performed on the wafer, even a slight distortion generated on the wafer causes deterioration in pattern transfer accuracy. This leads to a decrease in yield. Further, there is a problem that extra time is required for the wafer suction operation, which causes a reduction in productivity.
本発明の目的は、最小限の吸着時間でかつ最適な吸着
力でウエハを吸着したのち次の工程へ進ませることによ
り、超微細加工時の歩留まりの向上および生産性の向上
が図れるウエハ保持装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer holding apparatus capable of improving yield and productivity at the time of ultrafine processing by sucking a wafer with a minimum suction time and an optimum suction force and then proceeding to the next step. Is to provide.
本発明のウエハ保持装置は、 真空によって吸着面にウエハを吸着保持する保持台を
備えた保持装置において、該吸着面に真空を供給するた
めに該保持台に形成される吸引管と、該吸引管内又は該
吸着面の密閉空間の圧力情報を検出するために該保持台
内に設けられる圧力センサとを有するものである。A wafer holding device according to the present invention is a holding device provided with a holding table for holding a wafer on a suction surface by vacuum, wherein a suction tube formed on the holding table for supplying a vacuum to the suction surface; A pressure sensor provided in the holding table for detecting pressure information in the pipe or in the closed space of the suction surface.
また、前記保持台の周囲の外気を導入するために前記
保持台に形成された導入管を有し、前記圧力センサは前
記吸引管又は前記吸着面の圧力と、前記保持台周囲の外
気圧との差圧を検出するものである。In addition, it has an introduction pipe formed in the holding table for introducing outside air around the holding table, and the pressure sensor has a pressure of the suction pipe or the suction surface, and an external pressure around the holding table. Is to detect the differential pressure.
また、前記吸収管に真空が供給されている時間を計測
するタイマを有し、該タイマが計測する時間と前記圧力
センサが出力する差圧の各データに基づいて異常を検出
する手段を有するものである。In addition, the apparatus has a timer for measuring a time during which vacuum is supplied to the absorption tube, and has means for detecting an abnormality based on each data of the time measured by the timer and the differential pressure output by the pressure sensor. It is.
さらに、前記ウエハはX線によって露光されるもので
ある。Further, the wafer is exposed by X-rays.
[作用] 本発明のウエハ保持装置では、圧力センサによって吸
引管内又は吸着面の密閉空間内の圧力を検出するため、
ウエハ保持装置が設置されている空間の雰囲気および真
空吸着されるウエハの裏面の状態に関わりなくウエハの
裏面の圧力を高い精度で検出することができる。[Operation] In the wafer holding apparatus of the present invention, since the pressure sensor detects the pressure in the suction pipe or in the closed space of the suction surface,
The pressure on the back surface of the wafer can be detected with high accuracy irrespective of the atmosphere in the space where the wafer holding device is installed and the state of the back surface of the wafer that is vacuum-adsorbed.
また、圧力センサが、吸引管又は吸着面の密閉空間内
の圧力と、保持台周囲の外気圧との差圧を検出すること
により、吸引管又は吸着面の密閉空間内の圧力を直接検
出する場合に比べ、保持台付近の外気圧が変化しても、
ウエハの表面の圧力と裏面の圧力との差を正確に検出す
ることができる。Further, the pressure sensor directly detects the pressure in the closed space of the suction tube or the suction surface by detecting a pressure difference between the pressure in the closed space of the suction tube or the suction surface and the external pressure around the holding table. Even if the outside air pressure near the holding table changes,
The difference between the pressure on the front surface and the pressure on the back surface of the wafer can be accurately detected.
また、タイマが計測する時間と圧力センサが出力する
差圧の各データに基づいて異常を検出する手段によっ
て、ウエハの表面の圧力と裏面の圧力との差を最適値に
設定することができるため、最適な吸着力で吸着するの
でウエハの歪みを最小限に抑えることができるととも
に、ウエハを最小限の吸着時間で真空吸着することがで
きる。In addition, the difference between the pressure on the front surface of the wafer and the pressure on the back surface can be set to an optimum value by means for detecting an abnormality based on the data measured by the timer and the differential pressure output by the pressure sensor. In addition, since the wafer is suctioned with the optimum suction force, the distortion of the wafer can be minimized, and the wafer can be vacuum-adsorbed in a minimum suction time.
[実施例] 次に、本発明の実施例について図面を参照して説明す
る。Example Next, an example of the present invention will be described with reference to the drawings.
第1図(A),(B)はそれぞれ本発明のウエハ保持
装置の第1の実施例を示す図である。FIGS. 1A and 1B are views showing a first embodiment of the wafer holding device of the present invention.
本実施例のウエハ保持装置は、その裏面を真空吸着す
ることによりウエハ(不図示)を保持する保持台1と、
前記ウエハを真空吸着するための排気ポンプ6と、排気
ポンプ6と後述する吸引管8とを接続する配管4、配管
4の排気ポンプ6と保持台1との間に設けられているバ
ルブ7とを有し、保持台1が、真空吸着後の前記ウエハ
の平坦度を保つために平面仕上げされている吸着面2
と、吸着面2の中心部に1個および吸着面2に刻まれた
2本の同心円状の溝91,92にそれぞれ4個ずつ(第1図
(A)図示上下と左右)設けられている吸引口3と、各
吸引口3と配管4と接続する吸引管8とを備えている点
については、第5図に示した真空吸着式ウエハ保持装置
と同じである。しかし、圧力センサ5が、保持台1の内
部に設けられ、圧力センサ5と外部空間とを接続する導
入管11から導入される外気の圧力(外気圧)と吸引管8
内の圧力との差圧力を検出し、また、排気時間を計測す
るタイマ12が設けられ、さらに、制御回路10が、圧力セ
ンサ5の出力信号が示す吸引管8内の圧力が所定の値よ
りも小さくなったときのタイマ12が示す排気時間が、所
定の排気時間よりも大きいか否かを判定する判定手段10
1を有する点が、第5図に示した真空吸着式ウエハ保持
装置と異なる。The wafer holding device of the present embodiment includes a holding table 1 for holding a wafer (not shown) by vacuum-sucking the back surface thereof;
An exhaust pump 6 for vacuum-sucking the wafer, a pipe 4 connecting the exhaust pump 6 and a suction pipe 8 described later, a valve 7 provided between the exhaust pump 6 of the pipe 4 and the holding table 1, The holding table 1 has a suction surface 2 which is flat-finished to maintain the flatness of the wafer after vacuum suction.
And four in each of two concentric grooves 91 and 92 formed in the center of the suction surface 2 and two concentric grooves 9 1 and 92 formed in the suction surface 2 (FIG. 1 (A), top and bottom, left and right in FIG. 1A). This is the same as the vacuum suction type wafer holding device shown in FIG. 5 in that a suction port 3 and a suction pipe 8 connected to each suction port 3 and the pipe 4 are provided. However, the pressure sensor 5 is provided inside the holding table 1, and the pressure of the outside air (outside air pressure) introduced from the introduction pipe 11 connecting the pressure sensor 5 to the external space and the suction pipe 8 are provided.
A timer 12 is provided for detecting a pressure difference from the internal pressure and measuring the evacuation time, and further, the control circuit 10 determines that the pressure in the suction pipe 8 indicated by the output signal of the pressure sensor 5 exceeds a predetermined value. Determination means 10 for determining whether or not the exhaust time indicated by the timer 12 when
1 is different from the vacuum suction type wafer holding device shown in FIG.
ここで、バルブ7は、第5図に示したバルブ407と同
様に、閉じた状態では配管4内と外部空間とを連通さ
せ、開いた状態では配管4内と排気ポンプ6とを連通さ
せるものである。Here, the valve 7, like the valve 407 shown in FIG. 5, connects the inside of the pipe 4 with the external space when closed, and connects the inside of the pipe 4 with the exhaust pump 6 when opened. It is.
次に、本実施例のウエハ保持装置の動作について、第
2図および第3図を用いて説明する。Next, the operation of the wafer holding device of this embodiment will be described with reference to FIGS.
保持台1に真空吸着されるウエハは、保持台1の吸着
面2と接触する位置まで公知の搬送ハンド(不図示)に
より搬送されてくる。その後、バルブ7が開かれて、前
記搬送されてきたウエハと吸着面2および吸着面2に刻
まれた2本の同心円状の溝91,92とにより形成される空
間(密閉空間)内にある気体が、各吸引口3,吸引管8お
よび配管4を介して排気ポンプ6で排出されることによ
り、前記ウエハの裏面が真空吸着される。圧力センサ5
は、吸引管8内の圧力と外気圧との差圧力Pを検出し、
該差圧力Pを示す信号を制御回路10に出力する。The wafer vacuum-sucked on the holding table 1 is transferred to a position where the wafer comes into contact with the suction surface 2 of the holding table 1 by a known transfer hand (not shown). Thereafter, the valve 7 is opened, and the space (sealed space) formed by the conveyed wafer and the suction surface 2 and the two concentric grooves 9 1 and 9 2 carved on the suction surface 2 is formed. Is exhausted by the exhaust pump 6 through each of the suction ports 3, the suction pipe 8 and the pipe 4, so that the back surface of the wafer is vacuum-adsorbed. Pressure sensor 5
Detects the differential pressure P between the pressure in the suction pipe 8 and the outside air pressure,
A signal indicating the differential pressure P is output to the control circuit 10.
このとき、前記密閉空間に外気からの漏れがない場合
における真空吸着開始からの排気時間tと、圧力センサ
5の出力信号が示す差圧力Pとの関係は、たとえば第2
図に実線で示すものとなる。At this time, the relationship between the evacuation time t from the start of vacuum suction and the differential pressure P indicated by the output signal of the pressure sensor 5 in the case where there is no leakage from the outside air in the closed space is, for example, the second
This is shown by a solid line in the figure.
すなわち、前記ウエハを真空吸着する前(排気時間t
=0)では、バルブ7が一度閉じられて配管4内と外部
空間とが連通させられるため、吸引管8内の圧力は外気
圧と等しくなり、前記差圧力P=0[Torr]となる。そ
の後、前記ウエハの真空吸着が開始されると、吸引管8
内の圧力は排気が進むに従って低下していくため、前記
差圧力Pは増加していき、点Aで示す排気時間t=t1で
は前記差圧力P=PX1,点Cで示す排気時間t=t2では
前記差圧力P=PX2および点Eで示す排気時間t=t3で
は前記差圧力P=PX3となる。That is, before the wafer is vacuum-sucked (exhaust time t).
(= 0), since the valve 7 is closed once to allow the inside of the pipe 4 to communicate with the external space, the pressure in the suction pipe 8 becomes equal to the external pressure, and the differential pressure P = 0 [Torr]. Thereafter, when the vacuum suction of the wafer is started, the suction pipe 8
, The pressure P decreases as the evacuation progresses, so that the differential pressure P increases. At the evacuation time t = t 1 indicated by point A, the differential pressure P = P X1 , and the evacuation time t indicated by point C = T 2 , the differential pressure P = P X2 and the exhaust pressure t = t 3 indicated by the point E, the differential pressure P = P X3 .
ここで、前記ウエハを真空吸着して保持するために必
要な該ウエハの表面の圧力と裏面の圧力との差(以下、
「所定の差圧力」と称する。)P0を第2図に点Aで示す
差圧力PX1とすると、圧力センサ5で検出される吸引管
8内の圧力と外気圧との差圧力は、真空吸着されている
ウエハの表面の圧力と裏面の圧力との差と精度よく対応
しているため、圧力センサ5の出力信号が示す差圧力P
が前記所定の差圧力P0(=PX1)よりも大きくなったこ
と(すなわち、吸引管8内の圧力が所定の値よりも小さ
くなったこと)を確認したときに、制御回路10に、次の
工程へ進ませる指示信号(たとえば、このウエハ保持装
置をウエハの露光位置まで進ませる指示信号)を出力さ
せることにより、必要最小限の吸引力で、また必要最小
限の排気時間で前記ウエハを真空吸着することができ
る。Here, the difference between the pressure on the front surface and the pressure on the back surface of the wafer required to hold the wafer by vacuum suction (hereinafter, referred to as the pressure).
This is referred to as “predetermined differential pressure”. Assuming that P 0 is a differential pressure P X1 indicated by a point A in FIG. 2, the differential pressure between the pressure in the suction pipe 8 detected by the pressure sensor 5 and the outside air pressure is Since the difference between the pressure and the pressure on the back surface accurately corresponds to the difference pressure P indicated by the output signal of the pressure sensor 5,
When it is confirmed that the pressure difference is larger than the predetermined differential pressure P 0 (= P X1 ) (that is, the pressure in the suction pipe 8 is smaller than a predetermined value), the control circuit 10 By outputting an instruction signal for proceeding to the next step (for example, an instruction signal for proceeding the wafer holding device to the wafer exposure position), the wafer can be output with a minimum necessary suction force and a minimum required evacuation time. Can be adsorbed in vacuum.
また、以上の説明では、前記密閉空間に外気からの漏
れがないとしたが、実際にはウエハの歪、ウエハの裏面
に付着したごみやウエハを吸着面2に載置する際の該ウ
エハと吸着面2との位置関係により、前記密閉空間には
外気からの漏れが生じる。この場合における真空吸着開
始からの排気時間tと、圧力センサ5の出力信号が示す
差圧力Pとの関係は、たとえば第2図に破線で示すもの
となり、同じ排気時間tにおける前記差圧力Pは、前記
密閉空間に外気からの漏れがない場合に比べて小さくな
る。すなわち、点Bで示す排気時間t=t1では前記差圧
力P=PY1(PY1<PX1)および点Dで示す排気時間t=t
2では前記差圧力P=PY2(PY2<PX2)となる。Further, in the above description, it is assumed that there is no leakage from the outside air in the closed space. However, in actuality, the wafer is distorted, the dust adhered to the back surface of the wafer and the wafer when the wafer is placed on the suction surface 2 are distorted. Leakage from outside air occurs in the closed space due to the positional relationship with the suction surface 2. In this case, the relationship between the evacuation time t from the start of vacuum suction and the differential pressure P indicated by the output signal of the pressure sensor 5 is represented by, for example, a broken line in FIG. 2, and the differential pressure P at the same evacuation time t is Therefore, the size is smaller than that in the case where there is no leakage from the outside air in the closed space. That is, at the evacuation time t = t 1 indicated by the point B, the differential pressure P = P Y1 (P Y1 <P X1 ) and the evacuation time t = t indicated by the point D
At 2 , the differential pressure P = P Y2 (P Y2 <P X2 ).
しかし、本実施例のウエハ保持装置では、圧力センサ
5の出力信号が示す差圧力Pは、真空吸着されているウ
エハの表面の圧力と裏面の圧力との差と精度よく対応し
ているため、前記差圧力Pが前記所定の差圧力P0(=P
X1)よりも大きくなったことを確認したとき(第2図の
排気時間t=t2)に、制御回路10に前記指示信号を出力
させることにより、前記密閉空間に外気からの漏れが生
じた場合においても、必要最小限の吸引力で、また必要
最小限の排気時間で前記ウエハを真空吸着することがで
きる。However, in the wafer holding device of the present embodiment, the differential pressure P indicated by the output signal of the pressure sensor 5 accurately corresponds to the difference between the pressure on the front surface and the pressure on the back surface of the vacuum-sucked wafer. The differential pressure P is equal to the predetermined differential pressure P 0 (= P
X1 ), it was confirmed that it became larger than (exhaust time t = t2 in FIG. 2 ). By causing the control circuit 10 to output the instruction signal, leakage from the outside air occurred in the closed space. Even in such a case, the wafer can be vacuum-sucked with a minimum required suction force and a minimum required evacuation time.
さらに、前記密閉空間への外気からの最大許容漏れが
生じたときの前記排気時間tと前記差圧力Pとの関係を
予め測定しておき、この場合の前記差圧力Pが前記所定
の差圧力P0(=PX1)となるときの排気時間t(第2図
一点線鎖線で示す場合には、点Fで示す排気時間t=
t3)を求めておき、該排気時間t=t3を所定の排気時間
T0として設定しておくことにより、タイマ12で計測した
ウエハの真空吸着開始からの排気時間tが所定の排気時
間T0(=t2)よりも大きくなっても、圧力センサ5の出
力信号が示す差圧力Pが前記所定の差圧力P0(=PX1)
よりも大きくならないときには、制御回路10に、ウエハ
の真空吸着を中止させる指示信号や異常を知らせる信号
を出力させることもできる。Further, the relationship between the evacuation time t and the differential pressure P when the maximum allowable leak from the outside air to the enclosed space occurs is measured in advance, and in this case, the differential pressure P is equal to the predetermined differential pressure. Exhaust time t when P 0 (= P X1 ) (in the case shown by the dashed line in FIG. 2, exhaust time t = point F =
t 3 ) is determined, and the evacuation time t = t 3 is set to a predetermined evacuation time.
By setting it as T 0 , even if the evacuation time t from the start of vacuum suction of the wafer measured by the timer 12 becomes longer than a predetermined evacuation time T 0 (= t 2 ), the output signal of the pressure sensor 5 is obtained. Is the predetermined differential pressure P 0 (= P X1 ).
If it does not become larger, the control circuit 10 may output an instruction signal to stop the vacuum suction of the wafer or a signal to notify the abnormality.
したがって、制御回路10および判定手段101を第3図
に示すフローチャートに従って動作させることにより、
歩留まりの向上および生産性の向上が図れる。Therefore, by operating according to the flowchart showing the control circuit 10 and the judging unit 10 1 in Figure 3,
The yield and the productivity can be improved.
すなわち、制御回路10は、ウエハの真空吸着が開始さ
れると、圧力センサ5の出力信号とタイマ12の出力信号
とを読込む(ステップ71)。そして、判定手段101は、
タイマ12の出力信号が示す排気時間tが所定の排気時間
T0よりも大きいか否かを判定し(ステップ72)、前記排
気時間tが前記所定の排気時間T0よりも大きいときに
は、たとえば異常を知らせる信号を制御回路10から出力
させる(ステップ73)。一方、前記排気時間tが前記所
定の排気時間T0よりも小さいときには、圧力センサ5の
出力信号が示す差圧力Pが所定の差圧力P0よりも大きい
か否かを判定し(ステップ74)、前記差圧力Pが前記所
定の差圧力P0よりも小さいときにはステップ71の動作に
戻す。また、前記差圧力Pが前記所定の差圧力P0よりも
大きいときには、前記指示信号を制御回路10から出力さ
せる(ステップ75)。That is, when the vacuum suction of the wafer is started, the control circuit 10 reads the output signal of the pressure sensor 5 and the output signal of the timer 12 (step 71). The determination means 10 1,
The exhaust time t indicated by the output signal of the timer 12 is a predetermined exhaust time.
Determines greater or not than T 0 (step 72), the when evacuation time t is larger than the predetermined evacuation time T 0 is to output a signal indicating for example abnormal from the control circuit 10 (step 73). On the other hand, the when evacuation time t is less than the predetermined evacuation time T 0, the difference pressure P indicated by the output signal of the pressure sensor 5 determines whether greater than a predetermined differential pressure P 0 (step 74) , when the difference pressure P is smaller than the predetermined differential pressure P 0 is returned to the operation in step 71. Further, when the difference pressure P is greater than the predetermined differential pressure P 0 is to output the instruction signal from the control circuit 10 (step 75).
なお、ウエハの真空吸着を解除する場合には、バルブ
7が閉じられて、配管4内に外気が送り込まれる。When the vacuum suction of the wafer is released, the valve 7 is closed and the outside air is sent into the pipe 4.
本実施例のウエハ保持装置では、保持台1の下部に圧
力センサ5を設け、吸引管8の保持台1の下部に近い位
置から吸引管8内の気体を導入することにより、保持台
1内に露光中のウエハを冷却するための冷却水用の配管
が設けられた場合でも、圧力センサ5の設置場所が確保
できるようにしている。In the wafer holding apparatus of the present embodiment, the pressure sensor 5 is provided below the holding table 1, and the gas in the suction pipe 8 is introduced from a position near the lower part of the holding table 1 of the suction pipe 8, thereby allowing the inside of the holding table 1 to be introduced. Even if a cooling water pipe for cooling a wafer being exposed is provided, a place for installing the pressure sensor 5 can be secured.
第4図(A),(B)はそれぞれ本発明のウエハ保持
装置の第2の実施例を示す図である。FIGS. 4A and 4B are views showing a second embodiment of the wafer holding device of the present invention.
本実施例のウエハ保持装置は、第4図(B)に示すよ
うに、保持台31内に設けられた圧力センサ35が、保持台
31の吸着面32に設けられた外側の同心円状の溝392の第
4図(A)図示左斜め上に設けられた導入口46より第2
の導入管45を介して導入される密閉空間内の圧力と、第
1の導入管41を介して導入される外気の圧力(外気圧)
との差圧力を検出し、また、排気時間を計測するタイマ
を有せず、さらに、制御回路40が第1図に示す判定手段
101を有しない点が、第1図に示したものと異なる。As shown in FIG. 4B, the wafer holding device of the present embodiment is configured such that a pressure sensor 35 provided in the holding table 31
31 Figure 4 of the outer concentric grooves 39 2 provided on the suction surface 32 of the (A) introducing provided on the leftward oblique opening 46 than the second
In the closed space introduced through the introduction pipe 45 of the above, and the pressure of the outside air introduced through the first introduction pipe 41 (outside atmospheric pressure)
And the control circuit 40 does not have a timer for detecting the pressure difference between
It differs from that shown in FIG. 1 in that it does not have 10 1 .
したがって、本実施例のウエハ保持装置では、圧力セ
ンサ35が前記密閉空間内の圧力を用いて前記差圧力を検
出するため、真空吸着されるウエハの裏面の圧力を第1
図に示したものよりも精度よく検出することができる。Therefore, in the wafer holding device of the present embodiment, since the pressure sensor 35 detects the differential pressure using the pressure in the closed space, the pressure on the back surface of the vacuum-sucked wafer is set to the first pressure.
Detection can be performed with higher accuracy than that shown in the figure.
また、制御回路40は、圧力センサ35の出力信号が示す
前記密閉空間内の圧力が所定の圧力よりも小さくなった
ことを確認すると、次の工程へ進ませる指示信号を出力
する機能のみ有する。Further, the control circuit 40 has only a function of outputting an instruction signal for proceeding to the next step when confirming that the pressure in the closed space indicated by the output signal of the pressure sensor 35 has become smaller than a predetermined pressure.
さらに、本実施例のウエハ保持装置でも、保持台31の
下部に圧力センサ35を設け、第2の導入管45を介して前
記密閉空間内の気体を導入することにより、保持台31内
に露光中のウエハを冷却するための冷却水用の配管が設
けられた場合でも、圧力センサ35の設置場所が確保でき
るようにしている。Further, in the wafer holding apparatus of the present embodiment, the pressure sensor 35 is provided below the holding table 31 and gas is introduced into the holding space 31 through the second introduction pipe 45 to introduce gas in the closed space. Even in the case where a pipe for cooling water for cooling the wafer inside is provided, an installation place for the pressure sensor 35 can be secured.
本実施例においても、排気時間を計測するタイマを設
けるとともに、制御回路40に第1図に示す判定手段101
を設けることにより、所定の排気時間内に、圧力センサ
35の出力信号が示す差圧力が所定の差圧力よりも大きく
なったこと(すなわち、前記密閉空間内の圧力が所定の
値よりも小さくなったこと)を確認したときに、制御回
路40に、次の工程へ進ませる指示信号(たとえば、この
ウエハ保持装置をウエハの露光位置まで進ませる指示信
号)を出力させるようにしてもよい。Also in this embodiment, provided with a timer for measuring the exhaust time, the determination unit 10 1 shown in Figure 1 to the control circuit 40
By providing a pressure sensor within a predetermined evacuation time
When it is confirmed that the differential pressure indicated by the output signal of 35 has become larger than a predetermined differential pressure (that is, the pressure in the closed space has become smaller than a predetermined value), the control circuit 40 An instruction signal for proceeding to the next step (for example, an instruction signal for proceeding the wafer holding device to the wafer exposure position) may be output.
以上の説明において、第1図に示した圧力センサ5お
よび第4図に示した圧力センサ35は、吸引管8内または
前記密閉空間内の圧力と外気圧との差圧力を検出するも
のであったが、吸引管8内または前記密閉空間内の圧力
を直接検出するものであってもよい。特に、外気圧が一
定の値になるように管理されているときには、前記差圧
力を検出する必要は特にない。なお、この場合には、前
記2つの圧力センサ5,35に外気を導入する必要がないた
め、導入管11および第1の導入管41は不要となる。In the above description, the pressure sensor 5 shown in FIG. 1 and the pressure sensor 35 shown in FIG. 4 detect a differential pressure between the pressure in the suction pipe 8 or the closed space and the outside air pressure. However, the pressure may be directly detected in the suction pipe 8 or the closed space. In particular, when the outside pressure is controlled to be a constant value, there is no particular need to detect the differential pressure. In this case, since it is not necessary to introduce outside air into the two pressure sensors 5, 35, the introduction pipe 11 and the first introduction pipe 41 become unnecessary.
また、吸引管8内または前記密閉空間内の圧力を直接
検出する場合には、ロードセルからなる圧力センサを、
吸引管8内または前記密閉空間内の任意の場所に設けて
もよい。When the pressure in the suction pipe 8 or the closed space is directly detected, a pressure sensor including a load cell is provided.
It may be provided in the suction tube 8 or any place in the closed space.
さらに、保持台の吸着面の形状としては、該保持台の
真空吸着させるウエハの裏面と対向する面に、複数の円
柱状の突起部を設けたピンチャック方式によるものなど
であってもよい。Further, the shape of the suction surface of the holding table may be a pin chuck method in which a plurality of columnar projections are provided on the surface of the holding table facing the back surface of the wafer to be vacuum-sucked.
[発明の効果] 本発明は、上述のとおり構成されているので、次に記
載する効果を奏する。[Effects of the Invention] The present invention is configured as described above, and has the following effects.
吸引管内または密閉空間内の圧力を保持台内に設けた
圧力センサで検出することにより、最適な吸着力でウエ
ハを吸着することができ、該ウエハに発生する歪を最小
限に抑えられるとともに、最小限の吸着時間で前記ウエ
ハを真空吸着することができるため、超微細加工時の歩
留まりの向上および生産性の向上が図れるという効果が
ある。By detecting the pressure in the suction tube or the closed space with a pressure sensor provided in the holding table, the wafer can be suctioned with an optimum suction force, and the distortion generated in the wafer can be minimized. Since the wafer can be vacuum-sucked in a minimum suction time, there is an effect that the yield and the productivity can be improved at the time of ultrafine processing.
第1図は本発明のウエハ保持装置の第1の実施例を示す
図であり、(A)は保持台の上面図、(B)は該装置の
概略構成図、第2図は排気時間と差圧力との関係を示す
グラフ、第3図は制御回路および判定手段の動作を説明
するフローチャート、第4図は本発明のウエハ保持装置
の第2の実施例を示す図であり、(A)は保持台の上面
図、(B)は該装置の概略構成図、第5図は真空吸着式
ウエハ保持装置の一例を示すであり、(A)は保持台の
上面図、(B)は該装置の概略構成図である。 1,31……保持台、2,32……吸着面、3,33……吸引口、4,
34……配管、5,35……圧力センサ、6,36……排気ポン
プ、7,37……バルブ、8,38……吸引管、91,92,391,3
92……溝、10,40……制御回路、101……判定手段、11…
…導入管、12……タイマ、41……第1の導入管、45……
第2の導入管、46……導入口、A,B,C,D,E,F……点、P,P
X1,PX2,PX3,PY1,PY2……差圧力、P0……所定の差圧
力、t,t1,t2,t3……排気時間,T0……所定の排気時
間。FIG. 1 is a view showing a first embodiment of a wafer holding apparatus according to the present invention, wherein (A) is a top view of a holding table, (B) is a schematic configuration diagram of the apparatus, and FIG. FIG. 3 is a graph showing the relationship with the differential pressure, FIG. 3 is a flowchart for explaining the operation of the control circuit and the judgment means, and FIG. 4 is a diagram showing a second embodiment of the wafer holding device of the present invention; FIG. 5B is a top view of the holding table, FIG. 5B is a schematic configuration diagram of the apparatus, FIG. 5 is an example of a vacuum suction type wafer holding apparatus, FIG. 5A is a top view of the holding table, and FIG. It is a schematic structure figure of an apparatus. 1,31… Holder, 2, 32… Suction surface, 3, 33… Suction port, 4,
34 …… Piping, 5,35 …… Pressure sensor, 6,36 …… Exhaust pump, 7,37 …… Valve, 8,38 …… Suction pipe, 9 1 , 9 2 , 39 1 , 3
9 2 ... groove, 10, 40 ... control circuit, 10 1 ... judgment means, 11 ...
... Introduction pipe, 12 ... Timer, 41 ... First introduction pipe, 45 ...
Second inlet pipe, 46 …… Inlet, A, B, C, D, E, F …… Point, P, P
X1 , P X2 , P X3 , P Y1 , P Y2 …… Differential pressure, P 0 …… Predetermined differential pressure, t, t 1 , t 2 , t 3 … Exhaust time, T 0 … Predetermined exhaust time .
フロントページの続き (72)発明者 千葉 裕司 東京都大田区下丸子3丁目30番2号 キ ヤノン株式会社内 (56)参考文献 特開 平4−71215(JP,A) 特開 平2−67745(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01L 21/027 Continuation of the front page (72) Inventor Yuji Chiba 3-30-2 Shimomaruko, Ota-ku, Tokyo Within Canon Inc. (56) References JP-A-4-71215 (JP, A) JP-A-2-67745 ( JP, A) (58) Field surveyed (Int. Cl. 6 , DB name) H01L 21/027
Claims (4)
る保持台を備えた保持装置において、該吸着面に真空を
供給するために該保持台に形成される吸引管と、該吸引
管内又は該吸着面の密閉空間の圧力情報を検出するため
に該保持台内に設けられる圧力センサとを有することを
特徴とするウエハ保持装置。1. A holding apparatus having a holding table for holding a wafer on a suction surface by means of a vacuum, a suction tube formed in the holding table for supplying a vacuum to the suction surface, and a suction tube in or inside the suction tube. A pressure sensor provided in the holding table for detecting pressure information in a closed space of the suction surface.
前記保持台に形成された導入管を有し、前記圧力センサ
は前記吸引管又は前記吸着面の圧力と、前記保持台周囲
の外気圧との差圧を検出することを特徴とする請求項1
記載のウエハ保持装置。2. An apparatus according to claim 1, further comprising an introduction pipe formed in said holding table for introducing outside air around said holding table, wherein said pressure sensor detects a pressure of said suction pipe or said suction surface and a pressure around said holding table. 2. The method according to claim 1, wherein a pressure difference from an outside air pressure is detected.
The wafer holding device as described in the above.
計測するタイマを有し、該タイマが計測する時間と前記
圧力センサが出力する差圧の各データに基づいて異常を
検出する手段を有することを特徴とする請求項1記載の
ウエハ保持装置。3. A means for measuring a time during which vacuum is supplied to the absorption pipe, and means for detecting an abnormality based on each data of the time measured by the timer and the differential pressure output by the pressure sensor. 2. The wafer holding device according to claim 1, comprising:
を特徴とする請求項1記載のウエハ保持装置。4. The wafer holding apparatus according to claim 1, wherein said wafer is exposed by X-rays.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16993890A JP2880262B2 (en) | 1990-06-29 | 1990-06-29 | Wafer holding device |
| EP91305730A EP0463853B1 (en) | 1990-06-29 | 1991-06-25 | Vacuum chuck |
| DE69130434T DE69130434T2 (en) | 1990-06-29 | 1991-06-25 | Plate for working under vacuum |
| US07/723,336 US5191218A (en) | 1990-06-29 | 1991-06-28 | Vacuum chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16993890A JP2880262B2 (en) | 1990-06-29 | 1990-06-29 | Wafer holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0461220A JPH0461220A (en) | 1992-02-27 |
| JP2880262B2 true JP2880262B2 (en) | 1999-04-05 |
Family
ID=15895694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16993890A Expired - Fee Related JP2880262B2 (en) | 1990-06-29 | 1990-06-29 | Wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2880262B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2919158B2 (en) * | 1992-02-10 | 1999-07-12 | キヤノン株式会社 | Substrate holding device |
| JPH06244269A (en) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor |
| TWI275913B (en) * | 2003-02-12 | 2007-03-11 | Asml Netherlands Bv | Lithographic apparatus and method to detect correct clamping of an object |
| JP4522139B2 (en) * | 2003-09-19 | 2010-08-11 | 大日本スクリーン製造株式会社 | Substrate processing unit, substrate placement state detection method, and substrate processing apparatus |
| US20070076345A1 (en) * | 2005-09-20 | 2007-04-05 | Bang Won B | Substrate placement determination using substrate backside pressure measurement |
| JP5682106B2 (en) * | 2009-09-11 | 2015-03-11 | 株式会社ニコン | Substrate processing method and substrate processing apparatus |
| JP6833350B2 (en) * | 2016-06-01 | 2021-02-24 | キヤノン株式会社 | Manufacturing methods for holding devices, transport devices, lithography equipment, and articles |
| JP7257128B2 (en) * | 2018-11-08 | 2023-04-13 | 株式会社ディスコ | processing equipment |
| KR102810046B1 (en) * | 2021-12-23 | 2025-05-19 | 스미토모덴키고교가부시키가이샤 | heater |
| CN119361514A (en) * | 2024-10-25 | 2025-01-24 | 江苏京创先进电子科技有限公司 | Vacuum adsorption system, dicing saw and control method of vacuum adsorption system |
-
1990
- 1990-06-29 JP JP16993890A patent/JP2880262B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0461220A (en) | 1992-02-27 |
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