JP2884837B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a laminated structure of two or more film carrier semiconductor devices.

[0002]

2. Description of the Related Art As shown in FIGS. 9A and 9B, a conventional method of manufacturing a film carrier semiconductor device includes a sprocket hole 1 for transport and positioning and a device hole 2 for a semiconductor chip 5 to enter. A film carrier tape in which leads 3 and electric selection pads 4 of a predetermined shape are formed by etching a metal foil such as copper on an insulating film of polyimide or the like and a bump 6 which is a metal protrusion on electrode terminals in advance. After the formed semiconductor chip 5 is prepared, the leads 3 of the film carrier tape and the bumps 6 on the semiconductor chip 5 are aligned, and then inner lead bonding is performed by a thermocompression bonding method or a eutectic method.
Thereafter, a contact is made to contact the electric selection pad 4 in the state of the film carrier tape to perform electric selection and a bias test, thereby completing the film carrier semiconductor device.

Here, in order to improve reliability and mechanical protection,
As shown in FIG. 10, the resin 9 is often potted to the surface of the semiconductor chip 5 or the device hole 2 including the surface of the semiconductor chip 5 to perform resin sealing. A suspender 7, which is a frame of the insulating film, is generally provided to prevent the lead 3 from being deformed.

In mounting such a film carrier semiconductor device, the lead 3 is cut into a predetermined length as shown in FIG.
Generally, after the semiconductor chip 5 is fixed with 0, the leads 3 are outer-lead-bonded to the bonding pads 12 on the printed circuit board 11.

[0005] These film carrier semiconductor devices are:
Bonding can be performed at once regardless of the number of leads, so that bonding speed is fast, work can be automated easily using a film carrier tape, and it can be mounted after conducting electrical sorting and bias testing. That is, as compared with the case where a semiconductor device of another form is used, the semiconductor device has features such as a higher mounting density, a small size, a small thickness, and a light weight.

[0006]

However, with the recent progress in miniaturization and thinning of electronic devices, there has been a limit in improving the mounting density in the conventional mounting method, and various methods have been proposed. I have.

For example, as disclosed in Nikkei Microdevices, November 15, 1989, page 15 or Japanese Patent Application No. 62-36966, as shown in FIG. The mounting density is improved by successively stacking the outer bonding pads 11 on the same bonding pads 12 on the outer leads 11. In particular, the memory is provided with a chip select terminal to select the semiconductor chip 5, thereby improving the memory capacity per unit area.

However, mounting on a printed circuit board or the like is generally performed by a customer who manufactures an electronic device, and there is a problem that mounting technology and devices are required.

As a method of solving these problems, as disclosed in Japanese Patent Application Laid-Open No. 01-191462, as shown in FIG. There has been proposed a semiconductor device that can be stacked and mounted, and mounted on a printed circuit board or the like using external terminals 14 using a conventional mounting technique. However, this method has a drawback that it is not effective in greatly improving the mounting density due to the area, thickness, and weight of the envelope 13.

As a similar method, Japanese Patent Application Laid-Open No. 01-1848
No. 60, as disclosed in FIG.
A method has been proposed in which a plurality of film carrier semiconductor devices are stacked and then sealed with a sealing resin 15. However, there are restrictions on the positional relationship between the internal circuit of the semiconductor chip 5 and the electrode terminals. 15, the total area,
There is a disadvantage that the thickness and the weight are increased, and there is no effect on a great improvement in the mounting density.

An object of the present invention is to use the same mounting method as before,
It is an object of the present invention to provide a semiconductor device in which film carrier semiconductor devices capable of greatly improving a mounting density are stacked.

[0012]

SUMMARY OF THE INVENTION The present invention relates to a film carrier tape having at least a sprocket hole for carrying and positioning, a device hole for receiving a semiconductor chip, a lead made of metal, and a pad for electrical selection formed on an insulating film. And a semiconductor device in which at least an electrode pad and a semiconductor chip having a protruding metal bump formed on the electrode pad are provided, and a plurality of film-carry semiconductor devices to which the lead and the bump are connected are stacked. The lowermost film carrier semiconductor device is provided with a suspender of an insulating film frame and an OLB pad on the suspender, and each of the film carrier semiconductor devices sequentially laminated is at least two layers which are outer lead bonded on the OLB pad. Having a laminated structure of

[0013]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view of an example of the first embodiment of the present invention, FIG. 2 is a sectional view of FIG. 1, FIG. 3 is a sectional view of another example of the first embodiment of the present invention, and FIG. FIG. 5 is a plan view of a lower first film carrier semiconductor device of FIG. 1; FIG. 5 is a plan view of a second film carrier semiconductor device laminated on the first film carrier semiconductor device of FIG. 4; , (B) is the first
FIG. 5 is a cross-sectional view illustrating a laminating method according to an example of the embodiment in the order of steps for explaining the laminating method.

In the first embodiment, a memory I of a semiconductor chip is used.
This is an example when C is used.

The first film carrier semiconductor device of the first embodiment is provided with sprocket holes 1, device holes 2 as shown in FIG. 3 are provided. The leads 3 in the device holes 2 are formed so as to correspond to the positions of the bumps 6 formed on the semiconductor chip 5,
The bump 6 and the lead 3 are bonded.

Further, a chip select lead 1 is provided on the suspender 7 of the film frame outside the device hole.
An OLB pad 8 is provided at a position corresponding to the lead 3 of the second film carrier semiconductor device shown in FIG. Although not shown, the inside of the device hole 2 including the surface of the semiconductor chip 5 is sealed with a resin 9.

On the other hand, in the second film carrier semiconductor device, as shown in FIG. 5, the leads 3 are located at positions corresponding to the OLB pads 8 on the first film carrier semiconductor device except for the chip select leads 16. It has the same structure as the first film carrier semiconductor device provided.

First, the first and second film carrier semiconductor devices are subjected to an electrical selection and a bias test.

Next, as shown in FIG. 6B, the lead 3 of the second film carrier semiconductor device is cut into the first film carrier semiconductor device shown in FIG.
Fixing the first film carrier semiconductor device on the first film carrier semiconductor device using an adhesive 10; and bonding the leads 3 of the second film carrier semiconductor device to the OLB pads 8 on the first film carrier semiconductor device by outer lead bonding. As a result, an example of the semiconductor device of the first embodiment shown in FIGS. 1 and 2 is obtained.

Incidentally, if the mounting direction of the semiconductor chip 5 with respect to the bulk carrier tape is reversed, the semiconductor device can be made like the semiconductor device of another example of the first embodiment shown in FIG.

In this state, the electric selection and the bias test can be performed by bringing the contact into contact with the electric selection pad on the first film carrier semiconductor device in this state.

FIGS. 7A and 7B are cross-sectional views showing a method of mounting the semiconductor device of the first embodiment of FIG. 1 on a printed circuit board in the order of steps.

In mounting this semiconductor device, FIG.
As shown in FIG. 7A, first, as in the prior art, the lead 3 of the first film carrier semiconductor device is cut into a predetermined length, and then the lead 3 is bonded onto the printed circuit board 11 as shown in FIG. The lead 3 may be fixed to the bonding pad 12 on the printed circuit board 11 by outer lead bonding, and the mounting of the laminated structure can be realized without using any special method or device. The density and the memory capacity per unit area can be increased. In addition, when this embodiment is used, there is no large difference in the mounting density from the one that is sequentially stacked at the time of mounting.

FIG. 8 is a plan view of a second embodiment of the present invention.

In the second embodiment, as shown in FIG. 8, a semiconductor chip other than the memory IC is used for the first embodiment.

For this reason, the leads 3 of the first and second film carrier semiconductor devices need to be independent except for special cases, and the OLB pad is used for the semiconductor chip mounted on the first film carrier semiconductor device. Not connected to the lead connected to

In the case of the second embodiment, similarly to the first embodiment, it is possible not only to carry out an electrical selection and a bias test before mounting but also to improve the mounting density, that is, to improve the function density.

In the first and second embodiments, the structure is shown by stacking two pieces. However, it is needless to say that the number of stacked pieces is not limited.

[0030]

As described above, according to the present invention, the second film carrier semiconductor device is provided on the OLB pad on the second film carrier semiconductor device.
By stacking the third film carrier semiconductors and connecting them by outer lead bonding, it is possible to mount a plurality of laminated structures without requiring a special method and device for mounting on a printed circuit board or the like at the customer's side. There is an effect that the mounting density can be improved.

The laminated structure also has the effect of improving the electrical characteristics due to the fact that the wiring length can be shortened.

[Brief description of the drawings]

FIG. 1 is a plan view of an example of a first embodiment of the present invention.

FIG. 2 is a sectional view of FIG.

FIG. 3 is a sectional view of another example of the first embodiment of the present invention.

FIG. 4 is a plan view of a lower first film carrier semiconductor device of FIG. 1;

FIG. 5 is a plan view of a second film carrier semiconductor device stacked on the first film carrier semiconductor device of FIG. 4;

FIG. 6 is a cross-sectional view showing the order of steps for explaining a laminating method according to an example of the first embodiment;

7A to 7C are cross-sectional views illustrating a method of mounting the semiconductor device of the first embodiment of FIG. 1 on a printed circuit board in a process order.

FIG. 8 is a plan view of a second embodiment of the present invention.

FIG. 9 is a plan view and a sectional view of an example of a conventional film carrier semiconductor device.

FIG. 10 is a cross-sectional view of the film carrier semiconductor device of FIG. 9 sealed with a resin.

11 is a cross-sectional view of the resin-sealed film carrier semiconductor device of FIG. 10 mounted on a printed circuit board.

FIG. 12 is a cross-sectional view of a first example of a semiconductor device in which conventional film carrier semiconductor devices are stacked.

FIG. 13 is a cross-sectional view of a second example of a semiconductor device in which conventional film carrier semiconductor devices are stacked.

FIG. 14 is a sectional view of a third example of a semiconductor device in which conventional film carrier semiconductor devices are stacked.

[Description of Signs] 1 Sprocket hole 2 Device hole 3 Lead 4 Electric selection pad 5 Semiconductor chip 6 Bump 7 Suspender 8 OLB pad 9 Resin 10 Adhesive 11 Printed circuit board 12 Bonding pad 13 Envelope 14 External terminal 15 Sealing resin 16 Chip Select Lead

Claims (1)

(57) [Claims] 1. A film carrier tape having at least a sprocket hole for transport and positioning, a device hole for receiving a semiconductor chip, a lead made of metal, and a pad for electric selection formed on an insulating film; A semiconductor chip having a protruding metal bump formed on an electrode pad, and a plurality of film-carrying semiconductor devices having the leads and the bumps connected to each other; Wherein a suspender for an insulating film frame and an OLB pad are provided on the suspender, and each of the film carrier semiconductor devices sequentially laminated has a laminated structure of at least two layers which are outer lead bonded on the OLB pad. Semiconductor device.