JP2885209B2 - Laser processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing apparatus for performing processing by irradiating a continuous Q switch pulse train with a laser beam, and more particularly to a laser processing apparatus for marking a wafer or cutting a wiring in an IC.

[0002]

2. Description of the Related Art In general, in a continuously-pumped (CW-pumped) Q-switched laser, a continuous pulse having a high peak intensity can be obtained by applying a Q-switch to a continuously oscillating laser. Can be realized. Due to this feature, in the LSI manufacturing process, continuous excitation (CW excitation) Q-switched lasers are used for laser marking of wafers serving as substrates, and for cutting fuses for switching wiring inside LSIs and defective circuits to redundant circuits. Is used.

In the cutting of the fuse for switching the redundant circuit inside the LSI, the fuse is cut with one pulse of a Q-switch laser beam. If the interval between fuses to be cut varies from several μm to several mm, and the light scanning speed is constant,
The Q switch laser pulse time interval greatly varies depending on the fuse interval. Also, in the case of character marking of a wafer using a method of forming a character pattern with an aggregate of laser-processed dots, similarly to the case of fuse cutting for a redundant circuit, the Q switch laser pulse time interval greatly changes according to the dot interval. I do. Such a change in the Q switch laser pulse time interval is caused by the Q switch frequency (Q switch
Therefore , when the processing points are at irregular intervals, the Q switch frequency is changed in accordance with the intervals.

[0004] As a conventional typical laser processing apparatus used for cutting the fuse for switching the redundant circuit or for marking a wafer, a laser diode (hereinafter referred to as LD) -excited Nd: YAG (yttrium aluminum garnet) laser is used. There is an LD pumped Nd: YLF laser. Both lasers have an oscillation wavelength on the order of 1 μm, and a stable Q-switch pulse train can be obtained as compared with a lamp-pumped type because they are pumped by an LD. Further, by using the LD, long-term maintenance is unnecessary, and stable operation of the apparatus can be realized.

As an example of a laser marking device equipped with such an LD excitation laser, there is a laser marking device having a configuration as shown in FIG. In FIG. 4, a laser marking device includes a laser head 100 including an Nd: YAG laser and an ultrasonic Q switch unit, an X-axis mirror 101a for performing optical scanning in an X-direction, and an X-axis scanner 102.
a and a Y-axis mirror 101b for performing optical scanning in the Y direction
And a Y-axis scanner 102b, a control unit 103 for controlling these components, and an XY stage 104 on which the workpiece is fixed. This laser marking device scans a laser beam from a laser head 100 with an X-axis scanner 102a and a Y-axis scanner 102b, and quickly reads programmed characters and figures.
Marking with high precision.

In a laser processing apparatus for cutting a fuse for a redundant circuit, a high-precision, high-throughput laser repair apparatus capable of changing a laser pulse width and a laser energy level has also been realized.

Further, in order to realize a stable and good machining state, a laser machining apparatus which selects a wavelength which is easily absorbed by a workpiece as described in US Pat. No. 5,473,624. Has also been announced.

[0008]

However, the above-described conventional laser processing apparatuses have the following problems.

LD pumped Nd: YAG laser or Nd:
In a laser processing apparatus equipped with a YLF laser, when a Q switch is applied at a high repetition frequency, a problem called a first pulse becomes remarkable. The first pulse problem here means that when oscillation is started at a high repetition Q rate (up to 2 kHz or more) after stopping for a long time (about ms),
It means that only the first Q switch pulse has a higher peak intensity than the peak intensity of the Q switch pulse after the second shot, and specifically, the following problem occurs.

FIG. 3 shows three types of Q-switch pulse trains (A) to (C) as examples. The Q switch pulse train (A) has a low Q switch repetition frequency and a wide pulse time interval, but the Q switch pulse trains (B) and (C)
, The Q-switch repetition frequency increases and the pulse time interval decreases. The Q switch pulse train (A) corresponds to 1 kHz or less in the case of Nd: YAG,
The Q-switch pulse trains (B) and (C) correspond to a repetition frequency of 1 kHz or more. As can be seen from the examples of the Q-switch pulse trains (B) and (C), the first pulse has the same peak output as the Q-switch pulse train (A), but the second and subsequent pulses are in inverse proportion to the repetition frequency. Peak intensity has dropped. This is because the first pulse is excited for a sufficient time to form a population inversion, and a sufficiently high peak Q-switched laser pulse is output. On the other hand, the YAG (or YLF) is output after the second pulse. ) Since the excitation time is shorter than the lifetime of the excitation upper level of Nd in the crystal, a Q switch pulse is output before a sufficient population inversion is formed, and the pulse energy and peak intensity are reduced. .

In the laser processing apparatus in which the pulse energy and the peak intensity of the first pulse become higher than those of the second and subsequent pulses when the Q switch is applied at a high repetition frequency as described above, the processing at the processing start position is performed. In the processing after a long time interval, the processing is performed by the first pulse excited for a sufficient time, and the pulse energy and the peak intensity may be too strong to damage the processing target.

Incidentally, in a laser trimmer or the like for processing a resistor linearly with a continuous Q switch pulse, a method is provided in which a fast pulse killer for removing the first pulse is provided so that the processing does not become too strong at the trimming start position. However, this method is not an effective means for a memory repair or a wafer marker in which processing is performed from a single pulse to several pulses, and processing fluctuation occurs when processing is performed at high speed.

Further, the problem of the first pulse is particularly problematic when shortening the processing time. Specifically, in order to reduce the processing time, it is necessary to increase the light scanning speed. Machining position interval from several μm to several m
When the light scanning speed is constant, the laser Q switch time interval greatly varies when the light scanning speed is constant. For example, when the minimum processing position interval is 5 μm and the maximum position interval is 1 mm, if the scanning speed is 50 mm / s, the Q switch rate will change from 10 kHz to 50 Hz. At 50 Hz, the first pulse is not a problem, but at 10 kHz, the problem of the first pulse becomes significant. The first pulse problem can be eliminated if the light scanning speed is reduced at the minimum processing position interval (the Q switch repetition frequency can be reduced to a level at which the first pulse problem does not occur). However, in this case, the processing time is lengthened by an amount corresponding to the reduced optical scanning speed, which is incompatible with the reduction of the processing time. As described above, in the conventional laser processing apparatus, for example, a laser processing apparatus having a minimum processing position interval of 5 μm
It was not possible to process at a scanning speed of 0 mm / s.

In addition to the above-described problem of the first pulse, there is also a problem that the peak intensity and pulse width of the Q-switch pulse light vary depending on the variation of the Q-switch frequency (Q-switch pulse interval) . Specifically, when the laser Q switch time interval varies greatly,
That is, when the Q switch frequency changes,
Since the peak intensity and the pulse width of the Q-switch laser light change depending on the change of the switch frequency, for example, the stability of the Q-switch laser pulse for each shot is reduced in realizing clean processing with less dust generation. In wafer marking which is considered to be important, changes in the peak intensity and pulse width are problematic. Here, the fluctuation of the peak intensity means that the Q switch pulse trains (B) and (C) and the Q switch frequency are higher than the Q switch pulse train (A) having a lower Q switch frequency as shown in FIG. It means that the peak intensity becomes lower as it becomes.

As described above, the conventional LD-excited Nd:
In a laser processing apparatus equipped with a YAG laser or a Nd: YLF laser, it is difficult to continuously process processing points arranged at irregular intervals at high speed while keeping the Q-switch laser pulse peak intensity and the pulse width constant. .

A first object of the present invention is to solve the above-mentioned problems, and for example, the first pulse problem does not occur even at a Q-switch repetition frequency of 1 kHz or more, and is stable even if the Q-switch repetition frequency fluctuates. It is an object of the present invention to provide a laser processing apparatus which can obtain a laser pulse width in a predetermined range and can process processing points arranged at irregular intervals at high speed and continuously.

A second object is to provide a laser processing apparatus capable of obtaining a stable Q-switch laser beam peak intensity even when the Q-switch repetition frequency fluctuates.

[0018]

In order to achieve the first and second objects, a laser processing apparatus according to the present invention has a laser oscillator having a Q-switch element, and a Q-switched laser from the laser oscillator. In a laser processing apparatus for irradiating a processing surface with pulsed light at a constant or irregular time interval, a laser medium of the laser oscillator is a Nd: YAG crystal.
Composed of a laser medium with a shorter excitation upper level lifetime than
Q-switched laser pulse applied to the processing surface
Provided in the optical path of the light,
Light attenuating means for continuously varying light intensity;
The light attenuating means according to the variation of the Q switch pulse interval of the
Controlling the optical attenuation by the stage, and adjusting the output light intensity of the laser oscillator.
Light intensity control means for keeping the degree constant .

In the above case, the light intensity control means includes:
Detects Q-switched laser pulse light from laser oscillator
Based on light detection by the light detector.
The emission time of the laser oscillator is monitored, and
Time interval from the current flash time to the next flash time
Counting based on a pre-programmed sequence,
The light attenuation by the light attenuation means is controlled according to the counting time.
You may comprise so that it may be.

Further, the light intensity control means may further comprise :
Output of the laser oscillator detected by the light detector
The light intensity is monitored, and the monitored output light intensity is preset.
By the light attenuating means so as to be maintained at a specified light intensity.
It may be configured to control light attenuation .

Further, the light attenuating means may be a Q switch
The transmittance of the pulse light may be varied .

Further, the light attenuating means is an ultrasonic deflection element.
May be configured.

In any one of the laser processing apparatuses described above ,
Te, the laser medium of the laser oscillator is Nd: YVO ₄ binding
It may be composed of a crystal.

In the above case, the Q switch element is an ultrasonic
It may be a Q switch element.

[0025]

[0026]

According to the present invention as described above, the above-mentioned problem is solved by the following operations.

Since the first pulse problem is caused by stimulated emission before a sufficient population inversion is not formed, the problem of the first pulse is less likely to occur as the excitation upper level lifetime of the laser medium is shorter. In the present invention, a laser medium having a shorter excitation upper level life than an Nd: YAG crystal is used as a laser medium of a laser oscillator.
d: The problem of the first pulse is less likely to occur as compared with the one using the YAG crystal, and the Q switch frequency can be increased by the amount that the problem of the first pulse is less likely to occur.

For example, when an Nd: YVO ₄ crystal is used for the laser medium, the lifetime of the upper excited state of Nd: YVO ₄ is 90 μs, and the lifetime of the upper excited state of Nd: YAG is 230 μs.
, The energy per pulse of the Q switch cannot be high, but the change in pulse width is small up to a high repetition Q rate, so that the first pulse problem is less likely to occur. In addition, this Nd: Y
When a VO ₄ crystal is used, the obtained pulse width becomes stable, as described in an embodiment described later.

In the present invention, the light intensity of the Q-switched laser pulse light is continuously varied according to the variation of the Q-switched frequency. Is maintained constant, so that the Q switch frequency (Q
The light intensity does not fluctuate due to the fluctuation of the switch pulse interval .

In particular, a time interval from the emission time of the Q-switch laser pulse monitored immediately before to the next emission is counted, and the light intensity of the Q-switch laser pulse light is adjusted according to the counted time. In the case of machining at the machining start position or machining after a time interval,
Since the light intensity of the switch laser pulse light is also kept constant, the problem of the first pulse described above is solved.

[0032]

Next, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is a configuration diagram schematically showing a laser processing apparatus according to a first embodiment of the present invention. In FIG. 1, reference numeral 11 denotes a laser oscillator, which is an excitation laser diode (LD) 12 including a condensing optical member, and Nd: Y.
Ultrasonic (AO) Q for VO ₄ crystal 13, Q switch
It comprises the basic components of the element 14 and the output mirror 15.
Here, the excitation light from the excitation LD 12 is Nd: YVO
_The end face excitation method of condensing light on the _four crystal end faces is adopted, and a resonator is formed between the output mirror 15 and the crystal end faces of the Nd: YVO ₄ crystal 13.

A turning mirror 16 is arranged in the traveling direction of the light emitted from the laser oscillator 11, and a condenser lens 17 and a processing object 20 are arranged in the traveling direction of the light reflected by the turning mirror 16. XY stage 1
9 are sequentially arranged, and the laser light from the laser oscillator 11 is condensed on the processing surface of the processing target 20 on the XY stage 19 by the condenser lens 17.

The control unit 18 controls the driving of the laser oscillator 11 and the movement of the XY stage 19. The control unit 18 drives the XY stage (movement command signal), and based on the position signal output from the XY stage 19, the position coordinates indicating the focusing position of the laser beam on the processing target 20 fixed to the stage. After obtaining the information, the laser oscillator 11 outputs a Q-switch command signal to output a Q-switch pulse when the laser beam condensing position passes a predetermined position.
Drive control.

In the laser processing apparatus configured as described above, the control unit 18 controls the laser oscillator 11 and the XY stage 19 according to a program stored in a storage device (not shown), so that, for example, characters and figures can be processed. Marking can be performed at high speed with high accuracy, and a fuse for a redundant circuit can be cut.

The most characteristic configuration of the laser processing apparatus of the present embodiment is that the laser medium of the laser oscillator 11 includes Nd: Y
N is a laser medium having a shorter excitation upper-level life than AG
d: YVO ₄ crystal 13 was used. This Nd:
The YVO ₄ crystal has an excitation upper level lifetime of 90 μs and Nd: YA
G (〜230 μs) or less, and high repetition Q
The change in pulse width is small up to the rate, and the first pulse problem is unlikely to occur. Therefore, high-speed continuous machining can be performed even at machining points arranged at irregular intervals.

Regarding the change of the pulse width, the following results are obtained experimentally. The output of the laser oscillator 11 has a pulse width of 2.7 ns when the energy per pulse is 4 μJ / p and the Q-switch repetition frequency is 10 kHz. Here, the pulse width when the Q-switch repetition frequency was 1 kHz was 2.3 ns. Thus, in the laser processing apparatus of the present embodiment, even if the Q-switch repetition frequency changes from 10 kHz to 1 kHz, the pulse width only changes from 2.7 ns to 2.3 ns, and the rate of change is about 10%. Staying.
On the other hand, the configuration of the Nd: YLF laser is different, but as an example, when the Q-switch repetition frequency is 1 kHz, the pulse width is 13 ns, and when it changes to 10 kHz, the pulse width changes to 43 ns, which is 3.3 times. Was changed. As can be seen from these results, in the laser processing apparatus of the present embodiment, the pulse width is extremely stable as compared with a conventional Nd: YLF laser or the like.

As described above, in the laser processing apparatus of this embodiment, the first pulse problem hardly occurs up to a high Q-switch repetition frequency of, for example, about 10 kHz, so that the optical scanning speed can be increased and the processing time can be reduced. can do. In addition, since a stable pulse width can be obtained, it is possible to realize clean processing with less generation of dust in wafer marking processing.

(Embodiment 2) Here, a configuration for performing accurate irradiation power control is added to that of the above-described first embodiment, and a stable Q power is obtained even if the Q switch repetition frequency fluctuates.
A description will be given of a configuration in which the peak intensity of the switch laser beam can be obtained. FIG. 2 is a configuration diagram of a laser processing apparatus according to a second embodiment of the present invention.

In this laser processing apparatus, an AO deflection element 21 is provided as a continuously variable optical attenuator in the laser beam path having the configuration shown in FIG. It is configured to control the output light intensity. That is, the beam splitter 23 is arranged in the traveling direction of the light emitted from the laser transmitter 11, and the AO deflection element 21 and the galvanometer 29 having the scanning mirror 16 therein are arranged in the traveling direction of the light transmitted through the beam splitter 23. Are sequentially arranged, the photodetector 22 is arranged in the traveling direction of the light reflected by the beam splitter 23, and the condenser lens 17 and the processing object 20 are arranged in the traveling direction of the light reflected by the scanning mirror 16. Have been. Here, since the galvanometer 29 is driven (rotation command signal) to scan the laser beam from the laser transmitter 11, an fθ lens is used as the condenser lens 17.

Hereinafter, the irradiation power control operation of the laser processing apparatus will be described.

The output light from the laser oscillator 11 is partially reflected by the beam splitter 23, and the intensity of the reflected light is detected by the photodetector 22. When the intensity of the reflected light is detected by the light detector 22, the control unit 18 performs the operation based on the detection of the reflected light (laser intensity detection signal) by the light detector 22.
The light emission time and light intensity are monitored.

When the light emission time is monitored, the control unit 18
Then, the time interval from the monitored light emission time to the next light emission is counted, and an attenuation rate depending on the counted time interval is set in the AO polarizing element 21 (AO element drive signal). Here, the next light emission time is obtained based on a sequence programmed in advance. Further, the control unit 18 monitors the light intensity, and sets the attenuation rate such that the light intensity of the monitored laser light becomes the light intensity set by an external input unit (not shown) such as a keyboard (AO). Element drive signal). As described above, the control unit 18 sets the attenuation rate according to the time interval until the next light emission, and at the same time, attenuates the light intensity of the output laser light so as to maintain the light intensity set from outside. Set the rate.

When the attenuation rate is set by the control unit 18, the AO polarizing element 21 attenuates the laser pulse light output from the laser oscillator 11 according to the set attenuation rate. The laser pulse light attenuated by the AO polarizing element 21 enters the galvanometer 29. Galvanometer 29
Then, the scanning mirror is driven by the rotation command signal from the control unit 18 and the incident laser pulse light is
Scan against

As described above, the laser processing apparatus of the present embodiment counts the time interval from the emission time of the Q-switch laser pulse monitored immediately before to the next emission, and determines the attenuation rate according to the counting time. Is set. That is, the attenuation rate is set according to the variation of the Q switch repetition frequency. As a result, it is possible to eliminate the dependency of the variation of the Q switch repetition frequency on the laser output.

Further, since the attenuation factor is set so that the light intensity of the laser light is maintained at the set light intensity, it is possible to set the desired light intensity and to keep the light intensity of the laser light constant. Can be kept. As a result, fluctuations in the laser output due to deterioration of the laser device, fluctuations in the environmental temperature, and the like can be eliminated.

In the present embodiment, the time interval from the light emission time monitored immediately before to the next light emission time in the sequence programmed in advance is counted, but the output is programmed immediately beforehand. Based on the sequence, the immediately preceding output time and the next output time may be obtained, and the time interval may be counted.

In the present embodiment, the Nd: YVO ₄ crystal is used as the laser medium as a preferable mode, but the present invention is not limited to this. For example, Nd: Y conventionally used. When an AG crystal is used, the problems of peak intensity stability and first pulse can be solved.

In this embodiment, the AO deflecting element is used as the light attenuating means. However, the present invention is not limited to this. For example, an element that changes the transmittance may be used.

[0051]

As described above, according to the present invention,
For processing applications in the semiconductor field that can be processed with low-energy laser pulses, a laser medium with a short excitation upper-level life, which was previously unsuitable for Q-switch operation, enables fast pulse to high repetition Q rates. Problems are less likely to occur, and the Q switch frequency can be increased accordingly, so that the optical scanning speed can be increased and the processing time can be reduced. As a result, high-speed continuous machining can be performed even at machining positions arranged at irregular intervals.

Further, the output light intensity of the laser transmitter is kept constant.
Laser processing that is unprecedented because it can be maintained
Can be realized. In particular, Nd: Y
VO _FourIn the case of using crystals, the pulse width is also stable.
For example, the Q switch level for each shot
Clean processing with stability of the user pulse and less dust generation
Wafer marking, which is important for realizing
As a result, good laser processing can be realized.

[Brief description of the drawings]

FIG. 1 is a configuration diagram schematically showing a laser processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram of a laser processing apparatus according to a second embodiment of the present invention.

FIG. 3 is an explanatory diagram of a first pulse problem.

FIG. 4 is a block diagram showing an example of a conventional laser marking device equipped with an LD excitation laser.

[Explanation of symbols]

Reference Signs List 11 laser oscillator 12 laser diode (LD) 13 Nd: YVO ₄ crystal 14 AO (ultrasonic) Q switch element 15 output mirror 16 folding mirror 17 condensing lens 18 control unit 19 XY stage 20 work object 21 AO deflection (ultra Sound wave deflection) element 22 photodetector 23 beam splitter 26 scanning mirror 29 galvanometer

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-274399 (JP, A) JP-A-6-53577 (JP, A) JP-A-7-86668 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01S 3/117 B23K 26/00 H01S 3/00 H01S 3/14

Claims (7)

(57) [Claims] 1. A laser processing apparatus, comprising: a laser oscillator having a Q-switch element; and irradiating a Q-switched laser pulse light from the laser oscillator onto a processing surface at a constant or indefinite time interval . Laser medium is Nd: YAG crystal
Is also composed of a laser medium having a short excitation upper-level life , and the Q-switch laser pulse
Light intensity of the Q-switched laser pulse light provided in the optical path;
An optical attenuating means for continuously varying the degree, and responding to the variation of the Q switch pulse interval of the Q switch element.
Controlling light attenuation by the light attenuation means,
A laser processing apparatus comprising: a light intensity control unit that keeps an output light intensity of an oscillator constant . 2. A laser processing apparatus according to claim 1, wherein
The light intensity control means includes a Q switch from the laser oscillator.
A photodetector for detecting the switch laser pulse light.
When the laser oscillator emits light based on light detection by the output unit
Monitor the time of the
The time interval until the flash time of the
Counting based on the cans, and the light reduction is performed according to the counting time.
A laser processing apparatus for controlling light attenuation caused by attenuation means . 3. A laser processing apparatus according to claim 2, wherein
The light intensity control means further detects the light intensity by the light detector.
Monitor the output light intensity of the emitted laser oscillator,
The monitored output light intensity is maintained at a preset light intensity.
A laser processing apparatus for controlling light attenuation by the light attenuating means so as to be controlled . 4. The laser processing apparatus according to claim 1, wherein
The light attenuating means adjusts the transmittance of the Q-switched laser pulse light.
A laser processing apparatus characterized by being variable . 5. The laser processing apparatus according to claim 1, wherein
A laser processing apparatus , wherein the light attenuating means comprises an ultrasonic deflecting element . 6. The method according to claim 1, wherein:
3. The laser processing apparatus according to claim 1, wherein the laser medium of the laser oscillator is a Nd: YVO ₄ crystal.
Laser processing apparatus characterized by being more configurations. 7. A laser processing apparatus according to claim 6, wherein
Te, the laser processing apparatus, wherein the Q-switch element is an ultrasonic Q switch element.