JP2890693B2 - Optical reversal CVD method - Google Patents
Optical reversal CVD methodInfo
- Publication number
- JP2890693B2 JP2890693B2 JP16010790A JP16010790A JP2890693B2 JP 2890693 B2 JP2890693 B2 JP 2890693B2 JP 16010790 A JP16010790 A JP 16010790A JP 16010790 A JP16010790 A JP 16010790A JP 2890693 B2 JP2890693 B2 JP 2890693B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- cvd
- adsorbent
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 8
- 230000003287 optical effect Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000059 patterning Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 4
- 239000003463 adsorbent Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 16
- 238000003795 desorption Methods 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、各種材料のCVDにおいて、レジスト塗布、
露光、レジスト剥離などのプロセス無しで、光利用によ
って空間選択性良くパターニングできるCVD方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial application field) The present invention relates to CVD of various materials, resist coating,
The present invention relates to a CVD method capable of patterning with good spatial selectivity by utilizing light without processes such as exposure and resist stripping.
（従来の技術） 熱CVD中に光を照射し、光照射部でのCVD膜成長を抑制
することによって直接CVD膜のパターニングを行う光反
転CVD方法は、光照射部に膜を成長させる通常の光CVD方
法に比べて気相分解による降り積もりの影響を除去でき
るため、パターン転写の分解能を向上させることができ
る。この方法の従来例として、岸田の発明による特開昭
62−116786号公報（特願昭60−254582号）「表面選択処
理方法」や、杉田らの発表による第36回応用物理学関係
連合講演会（1989年春季）第２分冊592頁講演番号2p−
Ｌ−５「シンクロトロン放射光を用いたポジ型パターン
転写CVD」例がある。これらの方法を要約してまとめる
と、基板・吸着子間結合の振動エネルギーに共鳴する赤
外光照射による吸着子の脱離、または、真空紫外光照射
による基板・吸着子間結合切断による吸着子の脱離を利
用するものである。(Prior art) The light inversion CVD method of irradiating light during thermal CVD and directly patterning the CVD film by suppressing the growth of the CVD film in the light irradiation part is a usual method of growing a film in the light irradiation part. Compared with the photo-CVD method, the influence of deposition due to gas phase decomposition can be removed, so that the resolution of pattern transfer can be improved. As a conventional example of this method, Japanese Patent Application Laid-Open
No. 62-116786, Japanese Patent Application No. 60-254582, "Surface Selection Method", and the 36th Federation of Applied Physics-related Lectures (Spring 1989), second volume, 592 pages, lecture number 2p, presented by Sugita et al. −
There is an example of L-5 "positive pattern transfer CVD using synchrotron radiation". These methods can be summarized as follows: desorption of an adsorbent by infrared light that resonates with the vibration energy of the bond between the substrate and the adsorbent, or adsorbent by breaking the bond between the substrate and the adsorbent by irradiation with vacuum ultraviolet light This is to utilize the desorption.
（発明が解決しようとする課題） 上述の従来例によるCVD膜のパターニング方法は、基
板上の所望の部分にのみ光を照射し、この光照射部での
CVDを抑制することによってパターニングを行ってい
る。CVDの抑制を、基板・吸着子間結合の振動エネルギ
ーに共鳴する赤外光照射による吸着子の脱離で行う場
合、赤外光によって基板が加熱されるので、吸着子の脱
離だけでなく熱分解による堆積が生じ、CVDの抑制は不
十分になる。また、真空紫外光照射による基板・吸着子
間結合切断による吸着子の脱離によってCVDの抑制を行
う場合、基板・吸着子間の結合切断だけでなく吸着子内
の結合切断による光化学的CVDが生じ、CVDの抑制は不十
分になる。(Problems to be Solved by the Invention) The above-mentioned conventional method of patterning a CVD film irradiates only a desired portion on a substrate with light,
Patterning is performed by suppressing CVD. When suppressing the CVD by desorbing the adsorbent by irradiating infrared light that resonates with the vibration energy of the bond between the substrate and the adsorbent, the substrate is heated by the infrared light. Deposition due to thermal decomposition occurs, and the suppression of CVD becomes insufficient. In addition, when CVD is suppressed by desorption of the adsorbent by breaking the bond between the substrate and the adsorbent by irradiating vacuum ultraviolet light, photochemical CVD not only by breaking the bond between the substrate and the adsorbent but also by breaking the bond inside the adsorber is required. And insufficient control of CVD.
また、このようなCVD抑制のメカニズムからくる不十
分さ以外に、光源の種類の制約がある。結合の振動エネ
ルギーに共鳴する赤外光照射によって吸着子を脱離させ
る方法では、照射光のエネルギーを振動エネルギーに共
鳴させる必要がある。また、吸着子の種類は通常一種類
ではないので、全ての吸着子を脱離させるには、それぞ
れに共鳴した光を使用しなければならないので、用意す
べき光源の数が多くなり、装置構成上の障害になる。一
方、紫外光照射によって基板・吸着子間結合を切断して
吸着子を脱離させる方法では、吸着子の価電子励起によ
って、結合性軌道にある電子を反結合性軌道へ移動させ
ることによって行う。このことは、光励起の始状態と、
終状態が決まっていることを意味するので、このエネル
ギーに相当する波長の光の仕様に限定される。また、更
に波長が短い真空紫外光を用いた場合、吸着子のイオン
化が起こり、これによって吸着子・基板間の結合が切れ
て吸着子の脱離が起き、真空紫外光照射領域でのCVDを
抑制できる。この場合、用いる光のエネルギーは、イオ
ン化の閾値エネルギーより大きければ良いので、上記２
つの方法に比べて波長の制約が緩くなる。しかし、価電
子励起によるイオン化では、吸着子脱離によるCVDの抑
制はまた不十分であるという問題がある。In addition to the insufficiency resulting from such a mechanism for suppressing CVD, there is a restriction on the type of light source. In the method of desorbing an adsorbent by irradiating infrared light that resonates with the vibration energy of the bond, it is necessary to resonate the energy of the irradiation light with the vibration energy. Also, since the type of adsorbent is usually not one type, in order to desorb all the adsorbents, it is necessary to use light that resonates with each other. Obstacles. On the other hand, in the method in which the bond between the substrate and the adsorbent is broken by ultraviolet light irradiation and the adsorbent is desorbed, the electrons in the bond orbital are moved to the antibonding orbit by the valence electron excitation of the adsorbent. . This means that the initial state of photoexcitation
Since the final state is determined, the specification is limited to light having a wavelength corresponding to this energy. In addition, when vacuum ultraviolet light with a shorter wavelength is used, ionization of the adsorbent occurs, thereby breaking the bond between the adsorbent and the substrate, causing desorption of the adsorbent. Can be suppressed. In this case, the energy of the light to be used may be larger than the threshold energy of ionization.
The restrictions on the wavelength are relaxed compared to the two methods. However, in ionization by valence electron excitation, there is a problem that suppression of CVD by desorption of an adsorbent is also insufficient.
また、光の回折効果によるCVD膜のパターニング上の
問題がある。光照射領域はマスクの開口部の形状で決ま
り、パターニング後のCVD膜のエッジ形状の切れの良さ
は、マスクの開口部での光の回折による非照射部への光
の回り込みを、如何に抑えるかによって決まる。この回
り込みの大きさは、光の波長に比例するので、赤外光を
使用するよりも、もっと波長の短い真空紫外光を使う方
が回折による光の回り込みを抑えることが出来る。しか
し、これまでに使用されている波長では、まだ回折効果
の抑制は不十分である。There is also a problem in patterning the CVD film due to the light diffraction effect. The light irradiation area is determined by the shape of the opening of the mask, and the sharpness of the edge shape of the CVD film after patterning suppresses the sneak of light to the non-irradiated part due to diffraction of light at the opening of the mask. It depends on. Since the magnitude of this wraparound is proportional to the wavelength of the light, wraparound of light due to diffraction can be suppressed by using vacuum ultraviolet light having a shorter wavelength than by using infrared light. However, with the wavelengths used so far, the suppression of the diffraction effect is still insufficient.
本発明の目的は、光照射部での吸着子の脱離促進によ
る効果的なCVD抑制を行い、しかも、所望の波長を発す
る光源の選択幅を大きく採れ、また、同時に、光の回折
効果を抑え、光照射部と非照射部の境界のエッジの切れ
が焼くて空間選択性がよい光反転CVD方法を提供するこ
とにある。An object of the present invention is to effectively suppress CVD by promoting desorption of an adsorbent in a light irradiation section, and furthermore, a wide selection range of a light source emitting a desired wavelength can be taken, and at the same time, a light diffraction effect can be obtained. An object of the present invention is to provide a photoreversal CVD method which suppresses the edge of the boundary between the light irradiation part and the non-irradiation part and burns the edge, and has good spatial selectivity.
（課題を解決するための手段） 本発明の光反転CVD方法は、熱CVD中に光を照射するCV
D方法において、基板、または、原料ガスを構成する原
子の内、少なくとも一種類の原子の内殻をイオン化でき
るエネルギの光の照射を説明し、光照射部でのCVDを抑
制することによって直接CVD膜のパターニングを行うこ
とを特徴とする。(Means for Solving the Problems) The photoreversal CVD method of the present invention uses a CV that irradiates light during thermal CVD.
In the D method, the irradiation of light with energy capable of ionizing the inner shell of at least one kind of atoms of the atoms constituting the substrate or the source gas is explained, and the direct CVD is performed by suppressing the CVD in the light irradiation part. It is characterized in that the film is patterned.
（作用） 本発明の作用上の特徴は、基板、または、吸着子を構
成する原子の内、少なくとも１つの原子の内殻励起によ
る吸着子の分解・脱離の促進と、内殻励起可能な光の波
長が従来使用されていた光に比べて短波長であることに
よる回折効果の抑制との２つの要因に帰着する。(Function) The function of the present invention is to promote the decomposition / desorption of the adsorbent by the core excitation of at least one of the atoms constituting the substrate or the adsorbent, and to enable the core excitation. This results in two factors: suppression of the diffraction effect due to the wavelength of the light being shorter than the conventionally used light.
本発明の方法によるCVDの抑制は、内殻励起で形成さ
れた内殻ホールのカスケード的なオージェ遷移によって
形成された、吸着子の不安定な多価イオンの分解・脱離
によって行われる。これまで、気相中での有機金属化合
物やSiH4などの分解反応では、これを構成する原子の内
殻を励起する方が、価電子を励起するよりも、解離度の
高い分解生成物ができることが知られている。これらの
ことは、例えば、ナガオカ（Nagaoka）らによってケミ
カルフィジックスレーターズ誌（Chem.Phy.Lett.）第15
4巻（1988）の363ページから368ページに発表された論
文や、ヤギシタ（Yagisita）らによってケミカルフィジ
ックスレーターズ誌（Chem.Phy.Lett.）第132巻（198
6）の437ページから440ページに発表された論文に見ら
れる。このような、これまでに報告されている気相反応
だけではなく、基板上の吸着分子についても内殻を励起
する方が解離度が上がるだけでなく、解離生成物の脱離
が促進されることが、本発明者の実験結果から分かっ
た。従って、従来の赤外光や、真空紫外光を用いてCVD
を抑制するよりも、内殻を励起できる程の短波長の光を
用いた方が、CVDの抑制効果がある。そのため、光照射
部にCVDを行う場合に問題となる、光照射領域以外への
気相生成活性層の拡散による空間選択性の低下を、光照
射部での拡散してくる活性種の脱離、吸着分子の脱離に
よるCVD抑制でパターニングを行うことによって、従来
技術に比べて更に空間選択性を向上させることができ
る。The suppression of CVD by the method of the present invention is performed by the decomposition and desorption of unstable multiply-charged ions of the adsorbent formed by cascaded Auger transition of inner-shell holes formed by inner-shell excitation. Previously, the decomposition reaction of an organic metal compound and SiH 4 in the gas phase, is better to excite the inner shell of the atoms that constitute it, than to excite valence electrons, a high degree of disassociation decomposition products It is known that it can be done. These are described, for example, by Nagaoka et al. In Chemical Physics Laxers (Chem. Phy. Lett.) No. 15.
Volume 4 (1988), pages 363 to 368, and a paper published by Yagisita et al. In Chem. Phy. Lett., 132 (198).
This can be seen in the paper published on pages 437 to 440 of 6). Exciting the inner shell of not only the previously reported gas phase reactions but also the adsorbed molecules on the substrate not only increases the degree of dissociation, but also promotes the dissociation of dissociation products. This was found from the experimental results of the inventor. Therefore, CVD using conventional infrared light or vacuum ultraviolet light
It is more effective to suppress CVD than to use light having a wavelength short enough to excite the inner shell, rather than to suppress the emission. For this reason, the decrease in spatial selectivity due to the diffusion of the gas-phase generation active layer to regions other than the light irradiation region, which is a problem when performing CVD on the light irradiation unit, is due to the desorption of active species diffused in the light irradiation unit. In addition, by performing patterning by suppressing CVD due to desorption of adsorbed molecules, spatial selectivity can be further improved as compared with the related art.
また、光照射部でのCVD抑制によって膜をパターニン
グする場合、基板上への光照射領域を決めるマスクの開
口部の端で回折された回折光が、非照射部にも照射され
る。その結果、回折されずに直進する光による照射部だ
けでなく、非照射部でも回折光によってCVDが部分的に
抑制されてしまい、所望の形状にCVD膜をパターニング
できない。しかし、用いる光の波長が内殻励起可能なほ
ど短波長になると、これまで使用されている赤外光や価
電子励起可能な真空紫外光に比べて、回折光の強度、及
び、回り込みが２〜３桁小さくなるので、直進する光に
よる照射部だけでCVDを抑制でき、所望の形状にCVD膜を
パターニングできる。In the case where the film is patterned by suppressing the CVD in the light irradiation part, the diffracted light diffracted at the end of the opening of the mask that determines the light irradiation area on the substrate is also irradiated to the non-irradiation part. As a result, the CVD is partially suppressed by the diffracted light not only in the irradiated part but also in the non-irradiated part by the light that goes straight without being diffracted, and the CVD film cannot be patterned into a desired shape. However, when the wavelength of the light used is short enough to be able to excite the inner shell, the intensity of the diffracted light and the wraparound are lower than those of infrared light and vacuum ultraviolet light that can be excited by valence electrons, which have been used so far. Since it is reduced by up to three orders of magnitude, the CVD can be suppressed only by the irradiation part by the light traveling straight, and the CVD film can be patterned into a desired shape.
以上のように、内殻励起によって吸着子の分解・離脱
を効果的に行わせることができ、同時に、回折効果を抑
えることができ、所望の形状に空間選択性良くCVD膜を
パターニングできる。As described above, the adsorbent can be effectively decomposed and desorbed by inner-shell excitation, and at the same time, the diffraction effect can be suppressed, and the CVD film can be patterned into a desired shape with good spatial selectivity.
（実施例） 以下、本発明について第１図を参照しながら説明す
る。本実施例では、Siデバイスの形成において、Al配線
を形成する場合について述べる。(Example) Hereinafter, the present invention will be described with reference to FIG. In this embodiment, a case where an Al wiring is formed in forming a Si device will be described.
第１図（ａ）は、Si基板11上に熱酸化膜12がパターニ
ングされており、この上の全面にポリシリコンpoly−Si
膜が成膜されている。FIG. 1 (a) shows that a thermal oxide film 12 is patterned on a Si substrate 11, and a polysilicon poly-Si
A film has been deposited.
第１図（ｂ）には、第１図（ａ）の基板上に、Al配線
14を光15を用いて直接パターニングしながら堆積させ、
Al配線14をpoly−Si膜13を介してSi基板11に対して電気
的コンタクトを形成する方法を示してある。具体的成膜
方法を以下に示す。第１図（ａ）の構造を持つ基板を、
CVDチャンバに装着し、Al原料としてのジメチルアルミ
ニウムハイドライドAl（CH3）2Hをチャンバ内に導入し
基板温度を200℃にして熱CVDを行う。光15としてAl原
子、Ｃ原子、Si原子の内殻を励起できる100eVよりも高
エネルギーの放射光を用い、マスク16で配線形成領域に
光15を当てないようにして、この光の当たらない部分に
のみAlのCVDを行いAl配線14を形成する。このようにし
て、Al配線14を光15を用いて直接パターニングしながら
堆積させ、電気的コンタクトを形成することができる。FIG. 1B shows an Al wiring on the substrate shown in FIG.
14 is deposited while directly patterning using light 15,
A method for forming an electrical contact between the Al wiring 14 and the Si substrate 11 via the poly-Si film 13 is shown. A specific film forming method will be described below. A substrate having the structure shown in FIG.
It is mounted in a CVD chamber, dimethylaluminum hydride Al (CH 3 ) 2 H as an Al material is introduced into the chamber, and the substrate temperature is set to 200 ° C. to perform thermal CVD. As the light 15, radiation light having an energy higher than 100 eV that can excite the inner shells of Al atoms, C atoms, and Si atoms is used. The Al wiring 14 is formed only by CVD of Al. In this way, the Al wiring 14 can be deposited while being directly patterned using the light 15 to form an electrical contact.
この後、堆積させたAlをマスクにして、poly−Siをプ
ラズマエッチングで取り除いてAl配線形成プロセスが終
了する。この方法でAl配線を形成した後、この配線とコ
ンタクトを形成していない配線との間の抵抗を測定した
ところ電気的リークはなく、絶縁は良好であった。Thereafter, poly-Si is removed by plasma etching using the deposited Al as a mask, and the Al wiring forming process is completed. After forming the Al wiring by this method, the resistance between the wiring and the wiring without the contact was measured. As a result, there was no electric leak and the insulation was good.
本実施例では、Al（CH3）2Hを原料としたAlの光反転C
VDについて述べたが、原料はこれに限られることはな
く、トリメチルアルミニウムAl（CH3）３やトリイソブ
チルアルミニウムAl−iso（C4H9）３等の他の有機金属
でも良いし、塩素原子を含んでいても良い。また基板も
実施例に限らず他の半導体基板でも有効である。また、
反転CVDさせるものも、Alに限らず、SiやGaAs等の半導
体やこれらの混晶であってもよいし、SiO2等の絶縁膜で
あっても良い。成膜するものに応じて、基板や原料ガス
や、光のエネルギー、基板温度等の成長条件を作用の項
で述べた原理に合うよう変えればよい。In this embodiment, the optical inversion C of Al using Al (CH 3 ) 2 H as a raw material is used.
Although VD has been described, the raw material is not limited to this, and other organic metals such as trimethylaluminum Al (CH 3 ) 3 and triisobutylaluminum Al-iso (C 4 H 9 ) 3 may be used. May be included. Also, the substrate is not limited to the embodiment, and other semiconductor substrates are also effective. Also,
The material subjected to the reverse CVD is not limited to Al, but may be a semiconductor such as Si or GaAs, or a mixed crystal thereof, or may be an insulating film such as SiO 2 . The growth conditions such as the substrate, source gas, light energy, and substrate temperature may be changed according to the principle described in the section of operation, depending on what is formed.
（発明の効果） 本発明によれば、各種材料のCVDにおいて、レジスト
塗布、露光、レジスト剥離などのプロセス無しで、高エ
ネルギーの光利用によって所望の微細パターン形状にお
いても空間選択性良くパターニングできるCVD方法を得
ることができる。(Effects of the Invention) According to the present invention, in the CVD of various materials, a CVD that can be patterned with high spatial selectivity even in a desired fine pattern shape by utilizing high-energy light without processes such as resist coating, exposure, and resist stripping. You can get the way.
第１図（ａ）、（ｂ）は、本発明の方法による配線形成
方法を示す概念図である。 11……Si基板、12……熱酸化膜、13……poly−Si膜、14
……Al配線、15……光、16……マスク1 (a) and 1 (b) are conceptual diagrams showing a wiring forming method according to the method of the present invention. 11: Si substrate, 12: Thermal oxide film, 13: Poly-Si film, 14
…… Al wiring, 15… Light, 16 …… Mask
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/3205 Ｈ０１Ｌ 21/88 Ｂ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/3205 H01L 21/88 B
Claims (1)
基板、または、原料ガスを構成する原子の内、少なくと
も一種類の原子の内殻をイオン化できるエネルギーの光
を照射し、光照射部でのCVDを抑制することによってCVD
膜のパターニングを行うことを特徴とする光反転CVD方
法。1. A CVD method for irradiating light during thermal CVD,
By irradiating the substrate or the light of energy that can ionize the inner shell of at least one of the atoms constituting the source gas, the CVD in the light irradiation section is suppressed.
A photoreversal CVD method characterized by patterning a film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16010790A JP2890693B2 (en) | 1990-06-19 | 1990-06-19 | Optical reversal CVD method |
| US07/717,603 US5393577A (en) | 1990-06-19 | 1991-06-19 | Method for forming a patterned layer by selective chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16010790A JP2890693B2 (en) | 1990-06-19 | 1990-06-19 | Optical reversal CVD method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0452278A JPH0452278A (en) | 1992-02-20 |
| JP2890693B2 true JP2890693B2 (en) | 1999-05-17 |
Family
ID=15708006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16010790A Expired - Lifetime JP2890693B2 (en) | 1990-06-19 | 1990-06-19 | Optical reversal CVD method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890693B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2770578B2 (en) * | 1991-02-28 | 1998-07-02 | 日本電気株式会社 | Photo CVD method |
| JP2968657B2 (en) * | 1992-02-18 | 1999-10-25 | 日本電気株式会社 | Thermal CVD method |
-
1990
- 1990-06-19 JP JP16010790A patent/JP2890693B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0452278A (en) | 1992-02-20 |
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