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JP2890891B2 - Manufacturing method of connecting member - Google Patents
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JP2890891B2 - Manufacturing method of connecting member - Google Patents

Manufacturing method of connecting member

Info

Publication number
JP2890891B2
JP2890891B2 JP3127238A JP12723891A JP2890891B2 JP 2890891 B2 JP2890891 B2 JP 2890891B2 JP 3127238 A JP3127238 A JP 3127238A JP 12723891 A JP12723891 A JP 12723891A JP 2890891 B2 JP2890891 B2 JP 2890891B2
Authority
JP
Japan
Prior art keywords
film
adhesive
conductive particles
particles
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3127238A
Other languages
Japanese (ja)
Other versions
JPH04351864A (en
Inventor
泰史 後藤
功 塚越
敦夫 中島
共久 太田
豊 山口
達夫 伊藤
直樹 福富
良明 坪松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP3127238A priority Critical patent/JP2890891B2/en
Publication of JPH04351864A publication Critical patent/JPH04351864A/en
Application granted granted Critical
Publication of JP2890891B2 publication Critical patent/JP2890891B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Manufacturing Of Electrical Connectors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、相対峙する電極若しく
は回路間を電気的に接続するとともに接着固定するのに
用いられる接続部材の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a connecting member used for electrically connecting opposed electrodes or circuits and for bonding and fixing them.

【0002】[0002]

【従来の技術】IC、LSI、チップコンデンサ等の半
導体チップの電極をガラスや合成樹脂及び金属等よりな
る基板の表面に所定回路を形成してなる基板回路上に直
接接続したり、あるいはこれら基板回路同士を直接接続
したりするいわゆる高密度電極の接続方法として、相対
峙する電極若しくは回路間に接着剤を主成分とする接続
部材を介して接続する方法が知られている。
2. Description of the Related Art Electrodes of semiconductor chips such as ICs, LSIs, chip capacitors and the like are directly connected to a substrate circuit formed by forming a predetermined circuit on the surface of a substrate made of glass, synthetic resin, metal, or the like, or these substrates are connected to each other. As a method of connecting so-called high-density electrodes for directly connecting circuits, a method of connecting electrodes facing each other or a circuit via a connection member mainly composed of an adhesive between circuits is known.

【0003】この接続部材を用いた例としては、例えば
実開昭62−107444号公報にみられるように絶縁
性接着剤中にカーボン、ニッケル、半田及び表面に導電
層を形成したプラスチック粒子などの導電粒子を混入し
た異方導電性接着剤を用いて加圧により厚み方向に電気
的接続を得る方法と、導電材料を用いずに絶縁性接着剤
の接続時の加圧により電極面の直接接触による電気的接
続を得て、残余の接着剤は回路外に排除して接続する方
法が知られている。
[0003] Examples of the use of this connecting member include carbon, nickel, solder and plastic particles having a conductive layer formed on the surface thereof in an insulating adhesive as shown in Japanese Utility Model Application Laid-Open No. 62-107444. A method of obtaining electrical connection in the thickness direction by applying pressure using an anisotropic conductive adhesive mixed with conductive particles, and a method of directly contacting the electrode surface by applying pressure when connecting an insulating adhesive without using a conductive material A method is known in which an electrical connection is obtained and the remaining adhesive is removed outside the circuit for connection.

【0004】高密度電極の代表例として半導体チップの
場合についてみると、チップ面にバンプと呼ばれる突出
電極が形成されている場合が多く、このバンプはまた基
板回路上に設ける場合もある。いずれの場合もバンプ形
成は複雑な工程が必要であり、不良の発生と歩留りの低
下やバンプ材料であるAu、Ag、Cu及び半田等の貴
重な金属の消費により製造コストが高い問題点を有して
いる。このため、半導体チップを回路材料である例えば
アルミ配線のまま、若しくはその上に金属の拡散防止用
バリヤメタル層を形成した状態で接続電極とするバンプ
レスボンディングの試みも一部で行われているが、特性
が不十分なことから実用化が困難な状況にある。
In the case of a semiconductor chip as a typical example of a high-density electrode, a protruding electrode called a bump is often formed on a chip surface, and this bump may be provided on a substrate circuit. In any case, the bump formation requires a complicated process, and has a problem that the production cost is high due to the occurrence of defects and a decrease in yield, and the consumption of precious metals such as Au, Ag, Cu and solder which are bump materials. doing. For this reason, some attempts have been made to use bumpless bonding as a connection electrode in a state where a semiconductor chip is a circuit material, for example, aluminum wiring as it is, or a barrier metal layer for preventing metal diffusion is formed thereon. However, it is difficult to put it to practical use due to insufficient properties.

【0005】導電粒子を用いた接着剤による接続方式
は、電気的接続の信頼性向上のために電極上の粒子数を
増加させると隣接電極間にも粒子が高密度な状態で存在
してしまい絶縁性が不十分となったり、リークやショー
トを発生するなど絶縁性の保持に問題を生じてしまう。
逆に粒子数を減少すると電極上の粒子数が不十分となり
接続信頼性が低下する。この相反する傾向は、接続時の
加熱加圧などにより導電粒子が接着剤とともに電極上か
ら流出する現象により更に助長され、例えばピッチ90
μm以下といった高密度な接続に対応することは困難で
あるた。
In the connection method using an adhesive using conductive particles, if the number of particles on an electrode is increased in order to improve the reliability of electrical connection, the particles are present at a high density between adjacent electrodes. Insufficiency in insulation, leaks and short-circuits, and other problems occur in maintaining insulation.
Conversely, when the number of particles is reduced, the number of particles on the electrode becomes insufficient and the connection reliability decreases. This contradictory tendency is further promoted by the phenomenon that the conductive particles flow out of the electrodes together with the adhesive due to heating and pressurizing at the time of connection.
It has been difficult to cope with high-density connections such as μm or less.

【0006】また絶縁性接着剤による接続方式では、隣
接電極間の絶縁性は良好であるが、バンプ高さにバラツ
キのあることから、確実な接続信頼性を得難い欠点を有
している。すなわち、1チップあたりのバンプ数は、例
えば10〜500個と多数であり、バンプの高さは1〜
50μm程度である。これら多数の電極を、例えば0.
5μm以内のバラツキで形成管理することは極めて困難
である。バンプ高さが不均一であると、高さの大きいバ
ンプは容易に基板回路面に接触できるが、高さの低いバ
ンプは基板回路面との間に空隙を生じてしまい電気的な
接続が得られない。更にこの方式は、低コスト化の有望
方式であるバンプレス接続方式に対し、電極の接触が得
難いため原理的に対応することができない欠点を有して
いる。
The connection method using an insulating adhesive has good insulation properties between adjacent electrodes, but has a disadvantage that it is difficult to obtain reliable connection reliability due to variations in bump height. That is, the number of bumps per chip is as large as 10 to 500, for example, and the bump height is 1 to
It is about 50 μm. These multiple electrodes are, for example,
It is extremely difficult to control the formation with a variation within 5 μm. If the bump heights are not uniform, the larger bumps can easily contact the circuit surface of the board, but the lower bumps will create an air gap between the bumps and the circuit board, making electrical connection possible. I can't. Further, this method has a disadvantage that it cannot be applied in principle to the bumpless connection method, which is a promising method for cost reduction, because it is difficult to obtain electrode contact.

【0007】上記接着剤方式のあい路打開を目的に、最
近例えば特開昭63−276237号公報や特開昭63
−289824号公報などに見られるように、バンプ上
のみに導電性接着剤を形成して基板回路と接続する試み
もある。これらの方法では導電性接着剤を必要部に形成
するために、導電性接着剤の塗着工程が必要であるが、
清浄度が特に重要な半導体の製造工程に揮発しやすい有
機溶剤を持込むことによる清浄度の低下や作業環境の悪
化等の問題点がある。
For the purpose of breaking the road in the adhesive system, for example, Japanese Patent Application Laid-Open No. 63-276237 and Japanese Patent Application Laid-Open
As disclosed in, for example, JP-A-289824, there is also an attempt to form a conductive adhesive only on a bump and connect it to a substrate circuit. In these methods, in order to form the conductive adhesive in the required portion, a conductive adhesive application step is required,
There are problems such as a decrease in cleanliness and a deterioration in the working environment due to the introduction of a volatile organic solvent into a semiconductor manufacturing process in which cleanliness is particularly important.

【0008】更に導電性接着剤を必要部に塗着や転写法
で形成する方法は、シルクスクリーンや転写治具などの
点で製造技術の限界に近く、より一層の高密度化に対応
することが困難となっていた。
Further, the method of applying a conductive adhesive to a necessary portion by coating or transfer method is close to the limit of the manufacturing technology in terms of a silk screen, a transfer jig, and the like, and corresponds to a higher density. Had become difficult.

【0009】[0009]

【発明が解決しようとする課題】本発明は微小面積の接
続信頼性と絶縁性に優れ、高密度電極の接続が可能であ
り、また半導体チップ及び/又は回路上へのバンプ形成
の有無にかかわらず適用することが可能であり、更に半
導体製造工程に有機溶剤や導電性接着剤などを持込むこ
とが不要な接続部材の製造方法を提供することを目的と
する。
SUMMARY OF THE INVENTION The present invention is excellent in connection reliability and insulation properties in a small area, enables connection of high-density electrodes, and regardless of whether bumps are formed on a semiconductor chip and / or a circuit. It is another object of the present invention to provide a method for manufacturing a connecting member which can be applied without using an organic solvent or a conductive adhesive in a semiconductor manufacturing process.

【0010】[0010]

【課題を解決するための手段】すなわち、本発明は下記
工程よりなる接続部材の製造方法に関する。 (1)剥離可能な基材上にエポキシ系接着剤からなる絶
縁性接着剤層を形成し、この接着剤層上にフィルムを密
着する工程、 (2)エキシマレーザ光をフィルム上の必要部にのみ照
射して、前記フィルムを貫通して接着剤層の厚み方向の
少なくとも一部に孔を設ける工程、 (3)フィルムの貫通孔から導電粒子を孔内に配設する
工程。
That is, the present invention relates to a method for manufacturing a connecting member comprising the following steps. (1) a step of forming an insulating adhesive layer made of an epoxy-based adhesive on a peelable substrate, and adhering a film on the adhesive layer; (2) applying excimer laser light to necessary portions on the film (3) a step of irradiating only the film to form a hole in at least a part of the adhesive layer in the thickness direction of the adhesive layer through the film;

【0011】本発明では接着剤層の必要部に孔を設ける
手段としてレーザー光を用いることを特徴とする。レー
ザーとしてはYAGレーザー、炭酸ガスレーザーも使用
可能であるが、本発明ではエキシマレーザーを用いるこ
とが好適である。エキシマレーザーについては、例えば
(株)シーエムシー発行の機能材料、1989年10月
号及び11月号に詳しく記述されている。エキシマレー
ザーは化学結合を直接開裂させるに必要な紫外光領域の
高エネルギーのフォトンを高強度で発振できるレーザー
である。
The present invention is characterized in that a laser beam is used as a means for forming a hole in a necessary portion of the adhesive layer. As a laser, a YAG laser or a carbon dioxide laser can be used, but in the present invention, it is preferable to use an excimer laser. The excimer laser is described in detail in, for example, Functional Materials, October and November 1989, issued by CMC Corporation. An excimer laser is a laser that can oscillate high-energy photons in the ultraviolet region necessary for directly breaking chemical bonds with high intensity.

【0012】このレーザーを照射すると、照射部分が瞬
間的にプラズマ発光と衝撃音を伴って分解、飛散する
(アブレーション)。このレーザーを用いることにより
シャープな断面の孔を設けることができ、ミクロンレベ
ルでの形状、位置制御が可能で、深さも±0.1μm精
度で制御ができる。代表的な照射レーザと波長を例示す
ると、ArF(193nm)、KrF(248nm)、
XeCl(308nm)、XeF(351nm)であ
る。エキシマレーザーをフィルム上の必要部にのみ照射
する手段としては、エキシマレーザ光を透過することな
く、かつエキシマレーザー光が照射されても容易に分
解、変形等が起らないスレンレス、Al、Cu、Zn、
Ti等の各種金属やセラミック、ガラス、石英及びこれ
らに金属薄膜を形成したもの等からなり、必要部に貫通
孔があるマスクをフィルム上に密着し、エキシマレーザ
ーをマスク上に照射する方法や、エキシマレーザーの発
光源とフィルムの間に上記素材からなるマスクを固定
し、マスクを透過したレーザ光が必要部にのみ照射され
るようにする方法がある。後者の方法ではマスクとフィ
ルムの間に光学レンズを設け、マスクを透過したレーザ
ー光を光学レンズにより縮小することが可能となり、マ
スクに設けた貫通光よりも小さな孔をフィルム及び接着
剤層に設けることが可能となり、前者の方法より微細な
回路の接続用部材を製作する方法として好適である。
When this laser is irradiated, the irradiated portion is instantaneously decomposed and scattered with plasma emission and impact sound (ablation). By using this laser, a hole having a sharp cross section can be provided, the shape and position can be controlled at the micron level, and the depth can be controlled with an accuracy of ± 0.1 μm. Typical irradiation lasers and wavelengths are, for example, ArF (193 nm), KrF (248 nm),
XeCl (308 nm) and XeF (351 nm). Means for irradiating the excimer laser only to the necessary parts on the film include, without transmitting the excimer laser light, and easily decomposing even when irradiated with the excimer laser light, stainless steel, Al, Cu, Zn,
A method in which a mask made of various metals such as Ti, ceramics, glass, quartz, and a metal thin film formed on the same and having a through hole at a necessary portion is adhered to the film, and an excimer laser is irradiated onto the mask, There is a method in which a mask made of the above-described material is fixed between a light emitting source of an excimer laser and a film so that laser light transmitted through the mask is irradiated only to a necessary portion. In the latter method, an optical lens is provided between the mask and the film, and the laser light transmitted through the mask can be reduced by the optical lens, and a hole smaller than the penetrating light provided in the mask is provided in the film and the adhesive layer. This is suitable as a method for producing a finer circuit connection member than the former method.

【0013】以下、本発明を図面に基づいて説明する。
図1は接続部材の製造方法を示す断面模式図である。
(1)の工程において、接着剤層2を形成し、接着剤層
2上にフィルム3を密着させる。このとき接着剤層の剥
離が可能な基材1上に接着剤層を形成することが好まし
い。基材1及びフィルム3は接着剤2より剥離可能であ
ることを必要とする。基材1は必要に応じて用いる材料
であり、接続部材の片面あるいは両面に形成し、塵埃等
の付着を防止することができる。基材1の使用にあたっ
ては、接続部材の使用時に剥離可能とすることが必要で
あり、その指標としてJIS K−6768による濡れ
張力を35dyn/cm以下とすることが好ましい。そ
のためには、ポリエチレンやポリテトラフルオロエチレ
ン等の低表面張力材料を用いることや、ポリエチレンテ
レフタレートやポリイミド等にあっては前記の低表面張
力材料やシリコーンなどで表面処理したものを用いるこ
とが好ましい。
Hereinafter, the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a connection member.
In the step (1), the adhesive layer 2 is formed, and the film 3 is adhered on the adhesive layer 2. At this time, it is preferable to form the adhesive layer on the substrate 1 from which the adhesive layer can be peeled. The substrate 1 and the film 3 need to be peelable from the adhesive 2. The base material 1 is a material used as needed, and is formed on one side or both sides of the connection member, and can prevent adhesion of dust and the like. In using the base material 1, it is necessary that the connecting member be peelable at the time of use. As an index, it is preferable that the wetting tension according to JIS K-6768 is 35 dyn / cm or less. For this purpose, it is preferable to use a low surface tension material such as polyethylene or polytetrafluoroethylene, or to use polyethylene terephthalate or polyimide which is surface-treated with the above low surface tension material or silicone.

【0014】接着剤層2は、接着シート等に用いられる
熱可塑性絶縁材料や、熱や光により硬化性を示す硬化性
絶縁材料が広く用いられる。接続後の耐熱性や耐湿性に
優れることから、硬化性絶縁材料を用いることが好まし
い。中でもエポキシ系接着剤は、短時間硬化が可能で接
続作業性がよく、また分子構造上接着性に優れる等の特
徴から好ましく用いられる。エポキシ系接着剤として
は、例えば高分子量エポキシ樹脂、固形エポキシ樹脂と
液状エポキシ樹脂の混合物、ウレタンやポリエステル、
NBR等で変性したエポキシ樹脂等を主成分とし、これ
に潜在性硬化剤やカップリング剤などの各種変性剤、触
媒等を添加した系からなるものが用いられる。
For the adhesive layer 2, a thermoplastic insulating material used for an adhesive sheet or the like, or a curable insulating material which is curable by heat or light is widely used. It is preferable to use a curable insulating material because of its excellent heat resistance and moisture resistance after connection. Among them, an epoxy adhesive is preferably used because it can be cured in a short time, has good connection workability, and has excellent adhesiveness in molecular structure. Examples of the epoxy adhesive include a high-molecular-weight epoxy resin, a mixture of a solid epoxy resin and a liquid epoxy resin, urethane and polyester,
A resin composed mainly of an epoxy resin or the like modified with NBR or the like, and added with various modifiers such as a latent curing agent and a coupling agent, a catalyst, and the like is used.

【0015】これらの接着剤は室温近辺で粘着性を有す
ると導電粒子の配置固定を行いやすい。接着剤層の厚み
は5〜70μm以下が好ましく、良好な接続信頼性を得
るためには10〜35μmとすることが更に好ましい。
フィルム3は、前記した基材1と同様なものが用いら
れ、接着剤2から剥離可能であることが好ましい。しか
しながらフィルム3と導電粒子6との付着性が低く、貫
通孔4以外の部分に付着した導電粒子6の量が少ない場
合には、例えばカルボキシル基や水酸基等で変性した各
種プラスチックフィルム等のような接着性を有するフィ
ルムを用い、フィルムを剥離せずそのまま接着剤として
使用することもできる。フィルムロールやプレスによる
ラミネート等の通常用いられている方法で接着剤層に密
着させる。
When these adhesives have tackiness at around room temperature, the conductive particles can be easily arranged and fixed. The thickness of the adhesive layer is preferably 5 to 70 μm or less, and more preferably 10 to 35 μm in order to obtain good connection reliability.
As the film 3, the same material as the above-described substrate 1 is used, and it is preferable that the film 3 can be separated from the adhesive 2. However, when the adhesion between the film 3 and the conductive particles 6 is low and the amount of the conductive particles 6 attached to portions other than the through-holes 4 is small, for example, various plastic films modified with a carboxyl group, a hydroxyl group, or the like. Using an adhesive film, the film can be used as an adhesive without peeling. The adhesive layer is brought into close contact with a commonly used method such as lamination by a film roll or a press.

【0016】次に、(2)の工程において、フィルム3
上の必要部のみにレーザー光、好ましくはエキシマレー
ザーを照射する(2−1)。ここに必要部は接続すべき
電極の配置と一致させるべきであり、少なくともその中
心点の配置がエキシマレーザ光5と電極とで一致するよ
うにする。
Next, in the step (2), the film 3
A laser beam, preferably an excimer laser, is applied to only the above necessary parts (2-1). Here, the necessary parts should match the arrangement of the electrodes to be connected, and at least the arrangement of the center point of the excimer laser beam 5 matches the electrodes.

【0017】エキシマレーザー照射時のビーム径、繰り
返し数、パルス巾、出力及び波長などを調整することで
所望の深さの孔を、フィルム3を貫通して接着剤層2の
厚み方向に作製できる。孔は貫通孔としてもよい。エキ
シマレーザー装置は、発光部のビーム径が、例えば1×
2cm2と比較的大きく、繰り返し数も1から数100
Hzと連続可変できるため、数秒の照射で必要部のみに
所望の深さの孔を形成できる(2−2)。また、接続部
材の周囲を切断する際にも、切断を必要とする部分にエ
キシマレーザーを照射することで、高精度な寸法で接続
部材を切断することができる。エキシマレーザーは深さ
方向のアブレーションが可能なことから、接着剤層のみ
を切断し、基材層は切断せずに保持材として用いること
も可能である。この切断方法によれば、切断部周辺に変
形や損傷を及ぼさない。
By adjusting the beam diameter, the number of repetitions, the pulse width, the output, the wavelength, and the like at the time of excimer laser irradiation, a hole having a desired depth can be formed through the film 3 in the thickness direction of the adhesive layer 2. . The holes may be through holes. In the excimer laser device, the beam diameter of the light emitting unit is, for example, 1 ×
Relatively large, 2 cm 2, and the number of repetitions is one to several hundred
Since the frequency can be continuously changed to Hz, a hole having a desired depth can be formed only in a necessary portion by irradiation for several seconds (2-2). Also, when cutting the periphery of the connection member, the connection member can be cut with high precision dimensions by irradiating a portion requiring cutting with an excimer laser. Since the excimer laser can perform ablation in the depth direction, it can be used as a holding material without cutting the adhesive layer but cutting the base layer. According to this cutting method, no deformation or damage is caused around the cut portion.

【0018】次に(3)の工程において、必要に応じフ
ィルムを除去し導電粒子6を貫通孔内に配設する(3−
1)(3−2)。本発明に用いる導電粒子6はNi、F
e、Cr、Co、Al、Sb、Mo、Pb、Sn、I
n、Cu、Ag、Au等の金属、これらの酸化物及びこ
れらの二種以上の複合体若しくは合金、あるいはカーボ
ン、有機導電体などからなる一般的な導電粒子であれば
よく、これら導電粒子はまた、少なくとも粒子の表面が
導電性であれば使用可能である。
Next, in the step (3), the film is removed if necessary, and the conductive particles 6 are disposed in the through holes (see FIG.
1) (3-2). The conductive particles 6 used in the present invention are Ni, F
e, Cr, Co, Al, Sb, Mo, Pb, Sn, I
Metals such as n, Cu, Ag, Au, etc., their oxides and composites or alloys of two or more thereof, or carbon, may be any general conductive particles made of organic conductors and the like. In addition, it can be used as long as at least the surface of the particles is conductive.

【0019】これら導電粒子の中では、接続時の加熱、
加圧、加熱加圧などの条件下で変形性を示す粒子が好ま
しく適用できる。変形性粒子としては、例えばポリスチ
レンやエポキシ樹脂などの高分子核材の表面をNi、A
g、Au、Cu、半田などの導電性金属薄層で被覆した
粒子や低融点金属粒子などがある。接続時の条件として
は、例えば温度250℃以下、圧力100kgf/cm
2以下、時間30秒以下が一般的であり、高温高圧にな
るほど周辺材料に熱損傷を与えることから温度200℃
以下、圧力50kgf/cm2以下とすることが好まし
い。導電粒子の変形の確認は接続体の断面を電子顕微鏡
で観察することにより行われる。導電粒子の平均粒径
は、高密度な電極配置に対応するために30μm以下の
小粒径が好ましく、3〜15μm程度とすることがより
好ましい。
Among these conductive particles, heating during connection,
Particles exhibiting deformability under conditions such as pressurization and heating and pressurization can be preferably applied. As the deformable particles, for example, the surface of a polymer nucleus material such as polystyrene or epoxy resin may be Ni, A
g, Au, Cu, solder, and other particles coated with a thin conductive metal layer, and low-melting metal particles. Conditions for the connection include, for example, a temperature of 250 ° C. or less and a pressure of 100 kgf / cm.
2 or less, time 30 seconds or less is common, and the higher the temperature and pressure, the more heat damages the surrounding materials.
Hereinafter, the pressure is preferably set to 50 kgf / cm 2 or less. Confirmation of the deformation of the conductive particles is performed by observing the cross section of the connection body with an electron microscope. The average particle size of the conductive particles is preferably a small particle size of 30 μm or less, and more preferably about 3 to 15 μm in order to correspond to a high-density electrode arrangement.

【0020】貫通孔内における導電粒子の配設は図2に
示すように、単粒子による配設(a、b)や複数粒子に
よる配設(c、d、e、f)のいずれでも可能である。
複数粒子の場合は、粒子間凝集力や粒子の表面処理に用
いられた粘着性樹脂の粘着力により配設可能となる。導
電粒子はそのまま貫通孔内に配設(a、c、e)しても
よい。また樹脂でその表面を被覆(b、d)したり、あ
るいは樹脂中に導電粒子を分散(f)する等の表面処理
によってもよい。導電粒子の表面処理を行わない場合
は、単粒子状(a)とすることが接続剤2と接触するこ
とで脱落し難いことから好ましい。表面処理を行う場合
は、小粒径粒子を密集して形成できる利点がある。
As shown in FIG. 2, the arrangement of the conductive particles in the through-hole can be performed by either single particles (a, b) or plural particles (c, d, e, f). is there.
In the case of a plurality of particles, it can be arranged by the cohesive force between the particles or the adhesive force of the adhesive resin used for the surface treatment of the particles. The conductive particles may be directly provided (a, c, e) in the through-hole. Alternatively, a surface treatment such as coating (b, d) the surface with a resin or dispersing (f) conductive particles in the resin may be used. In the case where the surface treatment of the conductive particles is not performed, it is preferable that the conductive particles are in the form of a single particle (a) because the particles are hardly dropped off by contact with the connecting agent 2. In the case of performing the surface treatment, there is an advantage that small-diameter particles can be formed densely.

【0021】以上の工程により、必要部に導電粒子を局
在させた接続部材を製造することができる。このように
して得られた接続部材を接続すべき電極間に必要に応じ
基材1を除去して配置し、例えば加熱加圧を行うこと
で、導電粒子6は接着剤2中に埋った状態となり、次い
で電極と接触し、好ましくは変形することで電極面との
接触面積を増加して両回路との信頼性に優れた接続が得
られる。図1(4)に示される工程は(3)の工程の後
で必要に応じて行うものであり、基材1′と接着剤2′
よりなる接着フィルムを積層してなる。この場合は導電
粒子を上部からも固定できるので導電粒子が脱落し難
く、また両面が基材1及び1′で覆われているので塵埃
の付着防止に効果的である。なお、導電粒子6は接着剤
2中に埋没しないで導電粒子が接着剤面から露出して突
出した状態でもよい。
Through the above steps, a connecting member in which conductive particles are localized in necessary parts can be manufactured. The connection member thus obtained is disposed between the electrodes to be connected by removing the base material 1 as necessary, and, for example, by applying heat and pressure, the conductive particles 6 are buried in the adhesive 2. Then, by contacting and preferably deforming with the electrode, the contact area with the electrode surface is increased, and a highly reliable connection with both circuits can be obtained. The step shown in FIG. 1 (4) is performed as necessary after the step of (3), and includes a substrate 1 'and an adhesive 2'.
And a laminated adhesive film. In this case, the conductive particles can be fixed also from the upper part, so that the conductive particles hardly fall off, and since both surfaces are covered with the base materials 1 and 1 ', it is effective to prevent the adhesion of dust. The conductive particles 6 may not be buried in the adhesive 2 and may be in a state where the conductive particles are exposed and protrude from the adhesive surface.

【0022】図2は本発明になるほかの実施例を示すも
のである。図2(a)は、接着剤層2の一部をエキシマ
レーザーでアブレーションし、浅い孔を形成後、粒子6
を配設したものである。浅い穴でも導電粒子を固定でき
れば本発明の実施が可能である。図2(b)は、接着剤
層2及び2′の厚み方向に貫通孔を形成し重ね合わせた
ものである。エキシマレーザによるため側壁が精密に作
製できるので、導電粒子6の高密度充填が可能となり、
また導電粒子が接着面から突出して形成できるので接続
抵抗が低いことや、導電粒子の着色により位置合わせが
容易である等の特徴を有する。
FIG. 2 shows another embodiment according to the present invention. FIG. 2A shows that a part of the adhesive layer 2 is ablated by an excimer laser to form a shallow hole, and then the particles 6 are removed.
Is arranged. The present invention can be implemented as long as the conductive particles can be fixed even in a shallow hole. FIG. 2B shows a structure in which through-holes are formed in the thickness direction of the adhesive layers 2 and 2 'and are superposed. Since the excimer laser is used, the sidewalls can be manufactured precisely, so that the conductive particles 6 can be densely filled.
In addition, since the conductive particles can be formed so as to protrude from the adhesive surface, they have characteristics such as low connection resistance and easy alignment by coloring the conductive particles.

【0023】[0023]

【作用】本発明によれば、エキシマレーザーにより分解
しうるフィルムをあらかじめ接着剤層上に密着させ、エ
キシマレーザーをフィルム上の必要部に照射して、必要
部にのみ貫通孔を有するフィルムと接着剤に所望の深さ
の孔をあけることができ、フィルムの貫通孔から接着剤
の孔中に導電粒子を配設することができる。このフィル
ムはエキシマレーザーにより分解できればよく、種々の
素材からなるフィルムを用いることができ、接着剤との
密着性や剥離性等の特性や価格等を考慮して、種々の特
性に優れた素材からなるフィルムを選択することができ
る。また、エキシマレーザーを照射する前にはフィルム
上に貫通孔がないので、接着剤上に載置しておくことに
より、塵埃等による汚染を防止することができ、取り扱
いが容易になる。本発明になる接続部材は必要部のみに
導電粒子を配置することで、半導体チップ及び/又は回
路上へのバンプ形成の有無にかかわらず適用可能であ
り、フィルム状であることから無溶剤下の清浄雰囲気中
での接続作業が可能となる。
According to the present invention, a film which can be decomposed by an excimer laser is brought into close contact with the adhesive layer in advance, and the excimer laser is irradiated to a necessary portion of the film, and the film is bonded to a film having a through hole only in the necessary portion. A hole having a desired depth can be formed in the agent, and the conductive particles can be disposed in the hole of the adhesive through the through hole of the film. As long as this film can be decomposed by an excimer laser, a film made of various materials can be used, and in consideration of characteristics such as adhesion to an adhesive and releasability, price, etc., from a material excellent in various characteristics. Film can be selected. In addition, since there is no through-hole on the film before excimer laser irradiation, by placing the film on an adhesive, contamination by dust or the like can be prevented, and handling becomes easy. The connection member according to the present invention can be applied regardless of the presence or absence of bump formation on a semiconductor chip and / or a circuit by arranging conductive particles only in a necessary portion. Connection work can be performed in a clean atmosphere.

【0024】[0024]

【実施例】以下、本発明を実施例に基づいて詳細に説明
するが、本発明はこれに限定されるものではない。 実施例1 図1において、ポリテトラフルオロエチレン製フィルム
を基材1に使用し、この基材1上にエポキシ系接着剤を
主成分にした絶縁性接着剤2を塗布し、厚さ約20μm
の絶縁性の接着剤層2を設けた。次に厚さ35μmのポ
リイミド製フィルム3を絶縁性接着剤層2に密着させ
た。密着にはゴムロールを使用したラミネーターを用
い、ポリイミドフィルム3と接着剤層2間の浮きを極力
防止した。次にこのポリイミドフィルム3の面に接続す
るテスト用ICチップの電極と同じ配列に、マスクイメ
ージング法で波長248nmのエキシマレーザー5を照
射し、直径80μmの孔4を設けた。この孔4はポリイ
ミドフィルム3を貫通し、接着剤3に15μm程の深さ
をもった孔である。次に、ポリスチレンの高分子核材の
表面にAuの金属薄層を持った変形性の導電粒子6(平
均粒系10μm)をポリイミドフィルム3の上に散布し
た後、ゴム製のスキージかブラシを用いてポリイミドフ
ィルム3の貫通孔4に導電粒子6を押し入れるととも
に、余剰の導電粒子6をポリイミドフィルム3上から取
り除いた。次にポリイミドフィルム3を絶縁性接着剤2
から剥離し、所望の接続部材を得た。
The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples. Example 1 In FIG. 1, a film made of polytetrafluoroethylene was used as a substrate 1, and an insulating adhesive 2 containing an epoxy-based adhesive as a main component was applied onto the substrate 1, and the thickness was about 20 μm.
Was provided. Next, a polyimide film 3 having a thickness of 35 μm was brought into close contact with the insulating adhesive layer 2. The adhesion between the polyimide film 3 and the adhesive layer 2 was prevented as much as possible by using a laminator using a rubber roll for adhesion. Next, the same array as the electrodes of the test IC chip connected to the surface of the polyimide film 3 was irradiated with an excimer laser 5 having a wavelength of 248 nm by a mask imaging method to form holes 4 having a diameter of 80 μm. The holes 4 penetrate the polyimide film 3 and have a depth of about 15 μm in the adhesive 3. Next, after deformable conductive particles 6 (average particle size: 10 μm) having a thin metal layer of Au on the surface of a polystyrene polymer core material are sprayed on the polyimide film 3, a rubber squeegee or brush is applied. The conductive particles 6 were pushed into the through-holes 4 of the polyimide film 3 using the same, and excess conductive particles 6 were removed from the polyimide film 3. Next, the polyimide film 3 is applied to the insulating adhesive 2
To obtain a desired connection member.

【0025】実施例2 図1(4)に示すようにポリテトラフルオロエチレン製
フィルムの基材1′上にエポキシ系接着剤を主成分にし
た絶縁性接着剤2′を塗布し、厚さ約10μmの絶縁性
接着剤2′の層を設け、この絶縁性接着剤2′を前記実
施例1の接続部材における絶縁性接着剤2の面に張り合
わせて接続部材を得た。
Example 2 As shown in FIG. 1 (4), an insulating adhesive 2 'containing an epoxy-based adhesive as a main component was applied onto a substrate 1' of a polytetrafluoroethylene film, and the thickness was about A 10 μm layer of the insulating adhesive 2 ′ was provided, and the insulating adhesive 2 ′ was adhered to the surface of the insulating adhesive 2 in the connecting member of Example 1 to obtain a connecting member.

【0026】実施例3 実施例1に示した接続部材において、導電粒子6の代り
に導電粒子6の表面にコートマイザー(フロイント産業
(株)製)を用いて厚さ20μmのアクリル樹脂7の層
を設けた導電粒子6を用いた他は同様にして接続部材を
得た。
Example 3 In the connection member shown in Example 1, a 20 μm-thick layer of an acrylic resin 7 was formed on the surface of the conductive particles 6 by using a coatmizer (manufactured by Freund Corporation) instead of the conductive particles 6. A connection member was obtained in the same manner except that the conductive particles 6 provided with were used.

【0027】実施例4 実施例1に示した2枚の接続部材を導電粒子6の配列が
一致するように、接着剤層を対向させて張り合わせ接続
部材を得た。
Example 4 A connection member was obtained by laminating the two connection members shown in Example 1 with the adhesive layers facing each other so that the arrangement of the conductive particles 6 matched.

【0028】前記実施例1〜4の接続部材で電極径80
μm、電極間距離40μmのバンプが配列したテスト用
ICと同様の配列のITO電極をもったガラス基板とを
接続し、接続抵抗と隣接する電極間の絶縁抵抗を測定し
た結果を下表に示す。接続抵抗は60箇所の電極につい
ての平均値、絶縁抵抗は56箇所の測定値の最低値を示
した。
The connecting member of the first to fourth embodiments has an electrode diameter of 80.
The following table shows the results of measuring the connection resistance and the insulation resistance between adjacent electrodes by connecting a test IC in which bumps with an interelectrode distance of 40 μm were arranged to a glass substrate having ITO electrodes arranged in the same manner. . The connection resistance indicated the average value of the electrodes at 60 points, and the insulation resistance indicated the minimum value of the measured values at 56 points.

【0029】[0029]

【表1】 [Table 1]

【0030】[0030]

【発明の効果】本発明によれば、電気的接続を必要とす
る部分に導電粒子を局在させ、絶縁性の必要部は絶縁性
接着剤を用いることから、微小部分の接続が簡単に得ら
れる接続部材を比較的容易に製造することが可能となっ
た。
According to the present invention, conductive particles are localized in portions requiring electrical connection, and insulating portions are used with an insulating adhesive, so that minute portions can be easily connected. It is possible to relatively easily manufacture the connecting member to be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明になる接続部材の製造方法を示す断面
模式図。
FIG. 1 is a schematic sectional view showing a method for manufacturing a connection member according to the present invention.

【図2】 本発明になるほかの接続部材の製造方法を示
す断面模式図。
FIG. 2 is a schematic cross-sectional view illustrating a method for manufacturing another connecting member according to the present invention.

【図3】 導電粒子の状態を示す断面模式図。FIG. 3 is a schematic cross-sectional view showing a state of conductive particles.

【符号の説明】[Explanation of symbols]

1 基材 2 接着剤層 3 フィルム 4 貫通孔 5 エキシマレーザー光 6 導電粒子 7 樹脂層 DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3 Film 4 Through hole 5 Excimer laser beam 6 Conductive particle 7 Resin layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 太田 共久 茨城県下館市大字小川1500番地 日立化 成工業株式会社 下館研究所内 (72)発明者 山口 豊 茨城県下館市大字小川1500番地 日立化 成工業株式会社 下館研究所内 (72)発明者 伊藤 達夫 茨城県下館市大字五所宮1150番地 日立 化成工業株式会社 五所宮工場内 (72)発明者 福富 直樹 茨城県つくば和台48番地 日立化成工業 株式会社 筑波開発研究所内 (72)発明者 坪松 良明 茨城県つくば和台48番地 日立化成工業 株式会社 筑波開発研究所内 (56)参考文献 特開 昭61−264604(JP,A) 特開 昭61−239576(JP,A) (58)調査した分野(Int.Cl.6,DB名) H01R 11/01 H01R 43/00 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor, Kyohisa Ota, 1500, Oji, Oji, Shimodate-shi, Ibaraki Hitachi Chemical Co., Ltd. (72) Inventor Tatsuo Ito 1150 Goshomiya, Oaza, Shimodate-shi, Ibaraki Prefecture Hitachi Chemical Co., Ltd.Goshomiya Plant (72) Inventor Naoki Fukutomi 48 Tsukubadai, Ibaraki Hitachi Chemical Co., Ltd. Inside Tsukuba Development Laboratory (72) Inventor Yoshiaki Tsubomatsu 48 Tsukuba Wadai, Ibaraki Prefecture Hitachi Chemical Co., Ltd. Tsukuba Development Laboratory (56) References JP-A-61-264604 (JP, A) JP-A-61-239576 (JP, A) (58) Field surveyed (Int. Cl. 6 , DB name) H01R 11/01 H01R 43/00

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 下記工程よりなる接続部材の製造方法。 (1)剥離可能な基材上にエポキシ系接着剤からなる絶
縁性接着剤層を形成し、この接着剤層上にフィルムを密
着する工程、 (2)エキシマレーザ光をフィルム上の必要部にのみ照
射して、前記フィルムを貫通して接着剤層の厚み方向の
少なくとも一部に孔を設ける工程、 (3)フィルムの貫通孔から導電粒子を孔内に配設する
工程。
1. A method for manufacturing a connecting member comprising the following steps. (1) Absence of epoxy adhesive on peelable substrate
Forming an edge adhesive layer and adhering the film on the adhesive layer; (2) irradiating only necessary portions on the film with excimer laser light to penetrate through the film and obtain a thickness of the adhesive layer A step of providing holes in at least a part of the direction; (3) a step of disposing conductive particles in the holes from the through holes of the film.
JP3127238A 1991-05-30 1991-05-30 Manufacturing method of connecting member Expired - Lifetime JP2890891B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3127238A JP2890891B2 (en) 1991-05-30 1991-05-30 Manufacturing method of connecting member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3127238A JP2890891B2 (en) 1991-05-30 1991-05-30 Manufacturing method of connecting member

Publications (2)

Publication Number Publication Date
JPH04351864A JPH04351864A (en) 1992-12-07
JP2890891B2 true JP2890891B2 (en) 1999-05-17

Family

ID=14955136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3127238A Expired - Lifetime JP2890891B2 (en) 1991-05-30 1991-05-30 Manufacturing method of connecting member

Country Status (1)

Country Link
JP (1) JP2890891B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239576A (en) * 1985-04-16 1986-10-24 シチズン時計株式会社 Manufacture of connector
JPS61264604A (en) * 1985-05-17 1986-11-22 株式会社 槌屋 Anisotropic conductive sheet

Also Published As

Publication number Publication date
JPH04351864A (en) 1992-12-07

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