JP2899345B2 - Optical device - Google Patents
Optical deviceInfo
- Publication number
- JP2899345B2 JP2899345B2 JP2043008A JP4300890A JP2899345B2 JP 2899345 B2 JP2899345 B2 JP 2899345B2 JP 2043008 A JP2043008 A JP 2043008A JP 4300890 A JP4300890 A JP 4300890A JP 2899345 B2 JP2899345 B2 JP 2899345B2
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- Prior art keywords
- optical waveguide
- wavelength
- optical
- substrate
- refractive index
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims description 63
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 8
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- KDEDDPRZIDYFOB-UHFFFAOYSA-N n-methyl-n-phenylnitramide Chemical compound [O-][N+](=O)N(C)C1=CC=CC=C1 KDEDDPRZIDYFOB-UHFFFAOYSA-N 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- TYMLOMAKGOJONV-UHFFFAOYSA-N 4-nitroaniline Chemical compound NC1=CC=C([N+]([O-])=O)C=C1 TYMLOMAKGOJONV-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、レーザ光の波長を1/nに短波長化する光学
装置に関し、特に、温度制御を不要にし、高出力・安定
動作が期待できる光学装置に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical device for shortening the wavelength of a laser beam to 1 / n, and more particularly, to an optical device that does not require temperature control and can be expected to achieve high output and stable operation. It concerns the device.
従来の技術 レーザ光の波長を短波長にするものとして、SHG（sec
ond harmonic generation、ｎ＝２）、THG（third harm
onic generation、ｎ＝３）等が注目されている。SHGの
例として、第３図に示すものがあった（K.ヌノムラ（Nu
nomura）他”セカンド ハーモニック ジェネレーショ
ン（Second harmonic generation）in aスパッタード
（sputtered）LiNbo3フィルム（film）on MgO",J.クリ
スタル グロース（Crystal Growth）,vol.45,pp.355-3
60（1978）．）。基板１として、MgOの結晶を用い、そ
の上に２次の非線形効果を有するLiNbO3の薄膜を設け、
光導波路２′としている。2. Description of the Related Art SHG (sec.)
ond harmonic generation, n = 2), THG (third harm
onic generation, n = 3), etc. are attracting attention. An example of an SHG is shown in FIG. 3 (K. Nunomura (Nu
nomura) et al. "Second harmonic generation in a sputtered LiNbo 3 film on MgO", J. Crystal Growth, vol. 45, pp. 355-3
60 (1978). ). As a substrate 1, a MgO crystal is used, and a LiNbO 3 thin film having a second-order nonlinear effect is provided thereon,
It is an optical waveguide 2 '.
光導波路２′の端面から波長1.06μｍのYAGレーザ光
４を入射すると、SHGが生じて入射光の波長が1/2にな
り、もう一方の端面から、高調波である波長0.53μｍの
レーザ光５が出射されるというものである。When the YAG laser beam 4 having a wavelength of 1.06 μm is incident from the end face of the optical waveguide 2 ′, SHG is generated and the wavelength of the incident light is halved. 5 is emitted.
発明が解決しようとする課題 第３図に示した従来の光学装置では、SHGを生じさせ
るために、基本波（入射波と同じ波長）の基本モードTM
0と、波長が1/2の高調波の高次モードTM1を、光導波路
のモード分散を利用して、実効屈折率を一致させるとい
う位相整合を行っている。Problems to be Solved by the Invention In the conventional optical device shown in FIG. 3, in order to generate SHG, the fundamental mode TM of the fundamental wave (the same wavelength as the incident wave) is used.
0, the higher mode TM 1 harmonic wavelengths 1/2, by utilizing mode dispersion of the optical waveguide is performed phase matching that match the effective refractive index.
ある温度では、光導波路２の膜厚0.37μｍでこれらの
モードの実効屈折率を一致させることができ、このとき
にSHGが生じる。At a certain temperature, the effective refractive indices of these modes can be matched with the thickness of the optical waveguide 2 of 0.37 μm, and SHG occurs at this time.
従って、SHGを生じさせるには、光導波路２の膜厚を
厳密に設定することが要求される。Therefore, in order to generate SHG, it is necessary to strictly set the film thickness of the optical waveguide 2.
ところが、膜厚を厳密に設定しても、屈折率が温度依
存性を有するため、このままでは安定動作を実現するの
が難しく、この光学装置には、±数℃の精密温度制御系
が必要であるという課題があった。However, even if the film thickness is strictly set, it is difficult to realize stable operation as it is because the refractive index has temperature dependence, and this optical device requires a precision temperature control system of ± several degrees Celsius. There was a problem that there was.
本発明は、上記課題に鑑みてなされたもので、温度制
御を不要にし、高出力・安定動作が期待できる光学装置
を提供するものである。The present invention has been made in view of the above problems, and provides an optical device that does not require temperature control and can be expected to have high output and stable operation.
課題を解決するための手段 本発明は、上記課題を解決するために、基板と、入射
光と出射光の入出力が可能な上記基板上に設けたｎ（ｎ
は２以上の整数）次の非線形光学効果を有するリッジ形
の光導波路と、上記光導波路を挟むように、上記リッジ
形状の両側面以外の領域に設けた、上記光導波路に電界
を印加する電極を備え、上記入射光の波長における上記
光導波路の屈折率は、上記入射光の波長の1/nの上記出
射光の波長における上記基板の屈折率よりも大きいこと
を特徴とする。Means for Solving the Problems In order to solve the above problems, the present invention provides a substrate and n (n) provided on the substrate capable of inputting and outputting incident light and output light.
Is an integer of 2 or more.) A ridge-shaped optical waveguide having the following nonlinear optical effect, and an electrode for applying an electric field to the optical waveguide, which is provided in a region other than both side surfaces of the ridge so as to sandwich the optical waveguide. Wherein the refractive index of the optical waveguide at the wavelength of the incident light is larger than the refractive index of the substrate at the wavelength of the outgoing light that is 1 / n of the wavelength of the incident light.
作用 本発明は、非線形光学効果を有する媒体が、通常、電
気光学効果を有することに着目し、温度変化によって位
相整合する条件がずれても設けた電極に電圧を印加し
て、電気光学効果により光導波路の屈折率を変化させる
ことにより、位相整合をさせるものである。The present invention focuses on the fact that a medium having a non-linear optical effect usually has an electro-optical effect, and applies a voltage to an electrode provided even if the condition for phase matching is deviated due to a temperature change. The phase matching is performed by changing the refractive index of the optical waveguide.
特に、リッジ形の光導波路を採用し、リッジ形状の両
側面以外の領域に、上記導波路を挟み込むように電極を
形成することにより、導波損失が少なく、電極の製造が
容易で、しかも、低電圧で位相整合させることが可能に
なる。In particular, by adopting a ridge-shaped optical waveguide and forming electrodes so as to sandwich the waveguide in a region other than both side surfaces of the ridge shape, the waveguide loss is small, the manufacture of the electrode is easy, and Phase matching can be performed at a low voltage.
従って、本発明の光学装置は、温度制御の必要はな
く、高調波の高出力化・安定動作が実現される。Therefore, the optical device of the present invention does not require temperature control, and realizes higher harmonic output and stable operation.
実施例 第１図は本発明の一実施例の光学装置の構成図であ
る。Embodiment FIG. 1 is a configuration diagram of an optical device according to an embodiment of the present invention.
基板１上に、リッジ形の光導波路２を形成し、その光
導波路２を挟み込むように電極３が設けてある。基板１
としてMgOの結晶を用い、MgOの（111）面の上に、RFス
パッタ法により、２次の非線形光学効果を有するLiNbO3
を、例えば0.37μｍ、Ｃ軸配向のエピタキシャル成長さ
せた。A ridge-shaped optical waveguide 2 is formed on a substrate 1, and an electrode 3 is provided so as to sandwich the optical waveguide 2. Substrate 1
LiNbO 3 having a second-order nonlinear optical effect on the (111) plane of MgO by RF sputtering using a MgO crystal
Was grown epitaxially with a C-axis orientation of, for example, 0.37 μm.
次に、例えば、幅３μｍ、長さ5mm、中央部に残すよ
うに、イオンビームエッチングで、LiNbO3薄膜を、例え
ば膜厚0.2μｍ削り取り、リッジ形の光導波路２を形成
した。Next, the LiNbO 3 thin film was cut off by, for example, 0.2 μm in thickness by ion beam etching so as to leave, for example, a width of 3 μm and a length of 5 mm at the center, thereby forming a ridge-shaped optical waveguide 2.
LiNbO3薄膜を、本実施例では、光導波層と呼ぶことに
するが、実際に光が伝搬する（光導波路となる）のは、
ほとんど、膜厚が厚いリッジ形状部である。リッジ形状
部でない光導波層の厚さは、例えば、0.17μｍとした
が、なくても良い。In this embodiment, the LiNbO 3 thin film is referred to as an optical waveguide layer, but light actually propagates (becomes an optical waveguide) because
Mostly, it is a ridge-shaped portion having a large film thickness. The thickness of the optical waveguide layer other than the ridge-shaped portion is, for example, 0.17 μm, but need not be.
この光導波路２を挟み込むように、例えばAl、Au等の
金属で電極３を１対形成した。第１図に示すように、こ
の電極３は光導波路２に電界が印加されるように、リッ
ジ形状部の両側面以外の、表面を削り取ったLiNbO3薄膜
（光導波層）上に設けたが、光導波層中、または、基板
１上や基板１中に設けてもよい。A pair of electrodes 3 is formed of a metal such as Al or Au so as to sandwich the optical waveguide 2. As shown in FIG. 1, this electrode 3 is provided on a LiNbO 3 thin film (optical waveguide layer) whose surface has been cut off except for both side surfaces of the ridge-shaped portion so that an electric field is applied to the optical waveguide 2. , In the optical waveguide layer, or on or in the substrate 1.
リッジ形の光導波路２は、導波光が、効率よく導波路
内に閉じこめられ（光は表面付近に分布する）、光導波
路２を挟み込むように設けた電極３から発生する電界が
光に対してほぼ水平方向に相互作用をするため、電界集
中が生じ、その結果、低電圧で位相整合させることが可
能になる。In the ridge-shaped optical waveguide 2, the guided light is efficiently confined in the waveguide (light is distributed near the surface), and an electric field generated from an electrode 3 provided so as to sandwich the optical waveguide 2 generates a light with respect to the light. The interaction in a substantially horizontal direction causes electric field concentration, and as a result, phase matching can be performed at a low voltage.
第１図に示すように、電極３をリッジ形状の両側面以
外の領域に形成することにより、導波損失は小さいまま
で、しかも金属薄膜（電極３）を形成するのは、平坦な
構造上であるため、製造も容易である。As shown in FIG. 1, by forming the electrode 3 in a region other than both side surfaces of the ridge shape, the waveguide loss remains small, and the metal thin film (electrode 3) is formed on a flat structure. Therefore, manufacturing is easy.
尚、電極３を、リッジ形状部の両側面に形成した場
合、光導波路からわずかにしみ出している導波光が金属
薄膜の電極３に吸収され、導波損失が大きくなり、第２
高調波の出力が低下するという欠点と、作製が難しいと
いう欠点がある。When the electrodes 3 are formed on both side surfaces of the ridge-shaped portion, the guided light slightly leaking from the optical waveguide is absorbed by the metal thin-film electrode 3 and the waveguide loss becomes large.
There is a drawback that the output of the harmonic wave is reduced and a drawback that the production is difficult.
そのため、第１図のように、電極３はリッジ形状部以
外の領域に設ける。Therefore, as shown in FIG. 1, the electrode 3 is provided in a region other than the ridge-shaped portion.
光導波路２の膜厚が、例えば、0.37μｍで、温度が23
度では、光導波路２の端面に波長1.06μｍのYAGレーザ
光４を基板１に垂直方向に直線偏光して入射すると、SH
Gが生じて入射光の波長が1/2になり、もう一方の端面か
ら、波長0.53μｍのレーザ光５が出射された。The thickness of the optical waveguide 2 is, for example, 0.37 μm and the temperature is 23.
When the YAG laser beam 4 having a wavelength of 1.06 μm is incident on the end face of the optical waveguide 2 with linearly polarized light in the vertical direction on the substrate 1, SH
G was generated and the wavelength of the incident light was reduced by half, and the laser light 5 having a wavelength of 0.53 μm was emitted from the other end face.
第２図に、本実施例の場合の光導波路の膜厚と導波光
の実効屈折率との関係を示す。同図は、電圧印加の効果
を説明するためのもので、温度が23℃の場合である。FIG. 2 shows the relationship between the thickness of the optical waveguide and the effective refractive index of the guided light in the case of this embodiment. This figure is for explaining the effect of voltage application, and shows a case where the temperature is 23 ° C.
波長1.06μｍの基本波の基本モードの曲線はTM
0（ω）、波長0.53μｍの高調波の一次モードの曲線はT
M1（２ω）でそれぞれ実線で示されており、光導波路２
の膜厚0.37μｍでこれらの曲線は交わり（交点１）、一
致する（位相整合条件）。このときにSHGが生じる。The curve of fundamental mode of fundamental wave of wavelength 1.06μm is TM
0 (ω), the curve of the first-order mode of the harmonic of wavelength 0.53 μm is T
M 1 (2ω) is indicated by a solid line, and the optical waveguide 2
At a film thickness of 0.37 μm, these curves intersect (intersection 1) and coincide (phase matching conditions). At this time, SHG occurs.
本実施例では、光導波路２の膜厚が0.37μｍでありSH
Gの条件を満たしており、入射光４は基本波の基本モー
ドTM0を励振し、実効屈折率の等しい高調波の高次モー
ドTM1に一部変換されて、波長0.53μｍのレーザ光５が
出射されたものである。In this embodiment, the thickness of the optical waveguide 2 is 0.37 μm and
G is satisfied, and the incident light 4 excites the fundamental mode TM 0 of the fundamental wave, and is partially converted into a higher-order mode TM 1 of a harmonic having the same effective refractive index, and the laser light 5 having a wavelength of 0.53 μm. Are emitted.
次に、電極３に電圧を印加し、光導波路２に電界がか
かるようにする。Next, a voltage is applied to the electrode 3 so that an electric field is applied to the optical waveguide 2.
LiNbO3等の２次の非線形光学効果を有する媒体は、通
常、電気光学効果を有するため、電界をかけると、電界
の大きさと方向に依存して屈折率が変化する。電極３に
電圧Ｖを印加したときのTM0（ω）、TM1（２ω）の曲線
を、それぞれTM0（ω、Ｖ）、TM1（２ω、Ｖ）で点線を
示す。これらの曲線の交点（交点２）の位置は、交点１
から変化させることができる。Since a medium having a second-order nonlinear optical effect such as LiNbO 3 usually has an electro-optical effect, when an electric field is applied, the refractive index changes depending on the magnitude and direction of the electric field. The curves of TM 0 (ω) and TM 1 (2ω) when the voltage V is applied to the electrode 3 are indicated by dotted lines with TM 0 (ω, V) and TM 1 (2ω, V), respectively. The position of the intersection (intersection 2) of these curves is the intersection 1
Can be changed.
光導波路２、基板１の屈折率は、温度に依存してお
り、温度が変化すると、TM0（ω）、TM1（２ω）の曲線
は変化し、同時に、交点１の光導波路２の膜厚も変わる
ことになる。従って、SHGの変換効率は悪くなり、安定
動作ができなくなる。The refractive index of the optical waveguide 2 and the substrate 1 depends on the temperature. When the temperature changes, the curves of TM 0 (ω) and TM 1 (2ω) change, and at the same time, the film of the optical waveguide 2 at the intersection 1 The thickness will also change. Therefore, the conversion efficiency of the SHG deteriorates, and stable operation cannot be performed.
本実施例では、このとき電極３に電圧を印加すると、
交点の位置を変化させて、位相整合条件を初期の交点の
光導波路２の膜厚の値（0.37μｍ）に戻すことができる
ため、安定な動作が実現できる。In this embodiment, when a voltage is applied to the electrode 3 at this time,
Since the position of the intersection can be changed and the phase matching condition can be returned to the initial value (0.37 μm) of the thickness of the optical waveguide 2 at the intersection, stable operation can be realized.
本実施例では、基本波の波長における光導波路２の屈
折率は、高調波の波長における基板１の屈折率よりも大
きいため、第２図のように、基本波と高調波をある膜厚
で導波モードで位相整合をさせることができ、高調波を
光導波路２の端面から出射させることができた。In this embodiment, since the refractive index of the optical waveguide 2 at the wavelength of the fundamental wave is larger than the refractive index of the substrate 1 at the wavelength of the harmonic wave, as shown in FIG. Phase matching could be performed in the waveguide mode, and higher harmonics could be emitted from the end face of the optical waveguide 2.
従って、基本波の波長における光導波路２の屈折率
は、高調波の波長における基板１の屈折率よりも大きい
ということが、本発明の条件の１つになる。Therefore, one of the conditions of the present invention is that the refractive index of the optical waveguide 2 at the wavelength of the fundamental wave is larger than the refractive index of the substrate 1 at the wavelength of the harmonic.
以上説明したのは、２次の非線形効果を示すLiNbO3を
光導波路に用いたSHGの場合であるが、ｎ（ｎは２以上
の整数）次の非線形光学効果を示す物質を光導波路用い
れば本発明の効果はある。What has been described above is the case of the SHG using LiNbO 3 exhibiting the second-order nonlinear effect in the optical waveguide. However, if a material exhibiting the n-th (n is an integer of 2 or more) nonlinear optical effect is used as the optical waveguide, There are effects of the present invention.
この場合の高調波の波長は1/nである。特に、ｎ＝２
の場合には、電気光学効果を効率よく示し、本発明の効
果は大きい。The wavelength of the harmonic in this case is 1 / n. In particular, n = 2
In the case of (1), the electro-optic effect is efficiently exhibited, and the effect of the present invention is large.
例えば、LiIO3、KNbO3、KTiOPO4や、MNA（メチルニト
ロアニリン）等のベンゼン環をもったπ電子共役系化合
物を含む高分子等を光導波路に用いれば効果は大きい。For example, if a polymer containing a π-electron conjugated compound having a benzene ring such as LiIO 3 , KNbO 3 , KTiOPO 4 or MNA (methylnitroaniline) is used for the optical waveguide, the effect is large.
また、基板としては、Ｃ軸配向のLiNbO3が成長しやす
いものとしてMgOを用いたが、これに限らない。In addition, as the substrate, MgO was used as a substrate on which LiNbO 3 having C-axis orientation is likely to grow, but is not limited to this.
発明の効果 以上のように本発明によれば、温度制御を不用にし、
安定動作・高出力化が期待できる光学装置が構成可能で
あるという効果を有する。Effects of the Invention As described above, according to the present invention, temperature control is unnecessary,
This has the effect that an optical device that can be expected to achieve stable operation and high output can be configured.
第１図は本発明の一実施例の光学装置の構成図、第２図
は本発明の一実施例の電圧印加の効果を説明するための
光導波路膜厚と実効屈折率との関係を示すグラフ、第３
図は従来の光学装置の構成図である。 １……基板、２……光導波路、３……電極、４……入射
光、５……出射光。FIG. 1 is a configuration diagram of an optical device according to one embodiment of the present invention, and FIG. 2 shows a relationship between an optical waveguide film thickness and an effective refractive index for explaining the effect of voltage application according to one embodiment of the present invention. Graph, third
FIG. 1 is a configuration diagram of a conventional optical device. 1 ... substrate, 2 ... optical waveguide, 3 ... electrode, 4 ... incident light, 5 ... outgoing light.
Claims (2)
上記基板上に設けたｎ（ｎは２以上の整数）次の非線形
光学効果を有するリッジ形の光導波路と、上記光導波路
を挟むように、上記リッジ形状の両側面以外の領域に設
けた、上記光導波路に電界を印加する電極を備え、上記
入射光の波長における上記光導波路の屈折率は、上記入
射光の波長の1/nの上記出射光の波長における上記基板
の屈折率よりも大きいことを特徴とする光学装置。A ridge-shaped optical waveguide having an n (n is an integer of 2 or more) non-linear optical effect provided on said substrate capable of inputting and outputting incident light and outgoing light; An electrode for applying an electric field to the optical waveguide, provided in a region other than both side surfaces of the ridge shape so as to sandwich the waveguide, the refractive index of the optical waveguide at the wavelength of the incident light, the wavelength of the incident light An optical device, wherein a refractive index of the substrate at a wavelength of 1 / n of the outgoing light is larger than that of the substrate.
記載の光学装置。2. The optical device according to claim 1, wherein n is 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2043008A JP2899345B2 (en) | 1990-02-23 | 1990-02-23 | Optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2043008A JP2899345B2 (en) | 1990-02-23 | 1990-02-23 | Optical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03245131A JPH03245131A (en) | 1991-10-31 |
| JP2899345B2 true JP2899345B2 (en) | 1999-06-02 |
Family
ID=12651963
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2043008A Expired - Fee Related JP2899345B2 (en) | 1990-02-23 | 1990-02-23 | Optical device |
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| Country | Link |
|---|---|
| JP (1) | JP2899345B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349060C (en) * | 2002-06-25 | 2007-11-14 | 松下电器产业株式会社 | Optical signal-electric signal converter |
| US12379618B2 (en) | 2016-08-12 | 2025-08-05 | President And Fellows Of Harvard College | Micro-machined thin film lithium niobate electro-optic devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4662872B2 (en) * | 2006-03-20 | 2011-03-30 | 日本碍子株式会社 | Wavelength conversion element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6423234A (en) * | 1987-07-17 | 1989-01-25 | Canon Kk | Optical second higher harmonic generating device |
| JPH02240639A (en) * | 1989-03-15 | 1990-09-25 | Hitachi Metals Ltd | Optical device for transforming wavelength |
-
1990
- 1990-02-23 JP JP2043008A patent/JP2899345B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100349060C (en) * | 2002-06-25 | 2007-11-14 | 松下电器产业株式会社 | Optical signal-electric signal converter |
| US12379618B2 (en) | 2016-08-12 | 2025-08-05 | President And Fellows Of Harvard College | Micro-machined thin film lithium niobate electro-optic devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03245131A (en) | 1991-10-31 |
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