JP2901364B2 - Semiconductor device manufacturing equipment - Google Patents
Semiconductor device manufacturing equipmentInfo
- Publication number
- JP2901364B2 JP2901364B2 JP3078414A JP7841491A JP2901364B2 JP 2901364 B2 JP2901364 B2 JP 2901364B2 JP 3078414 A JP3078414 A JP 3078414A JP 7841491 A JP7841491 A JP 7841491A JP 2901364 B2 JP2901364 B2 JP 2901364B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- exhaust
- opening
- processing chamber
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000005530 etching Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 30
- 230000003068 static effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Weting (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置の製造装置
に関し、特に半導体ウェーハに薬液をシャワー状に噴出
してエッチングを行う枚葉式エッチング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and, more particularly, to a single wafer type etching apparatus for performing etching by spraying a chemical solution onto a semiconductor wafer in a shower shape.
【0002】[0002]
【従来の技術】従来の枚葉式エッチング装置は図3に示
すように、回転部4に吸着された半導体ウェーハ3を半
導体ウェーハ処理室2内で回転させ、シャワーノズル1
より薬液をシャワー状に噴出し、その噴出薬液5で半導
体ウェーハ3のエッチングを行う構造になっている。2. Description of the Related Art As shown in FIG. 3, a conventional single-wafer type etching apparatus rotates a semiconductor wafer 3 adsorbed on a rotating unit 4 in a semiconductor wafer processing chamber 2 to form a shower nozzle 1.
A chemical solution is ejected in a shower shape, and the semiconductor wafer 3 is etched with the ejected chemical solution 5.
【0003】この際、半導体ウェーハ処理室2の排気
は、半導体ウェーハ処理室2の側面の排気パイプ6から
行っている。また、排気量は、半導体ウェーハ処理室2
と手動ダンパ14を結ぶ排気配管13に設けた静止排気
測定器15を目視により観測し、適正規格範囲外の場合
に、手動にて手動ダンパ14を開閉し調節している。図
4は、従来技術の一連の動作を示すフローチャート図で
ある。At this time, the exhaust of the semiconductor wafer processing chamber 2 is performed from an exhaust pipe 6 on the side of the semiconductor wafer processing chamber 2. In addition, the amount of exhaust is set in the semiconductor wafer processing chamber 2
The static exhaust measuring device 15 provided in the exhaust pipe 13 connecting the manual damper 14 and the manual damper 14 is visually observed. FIG. 4 is a flowchart showing a series of operations of the related art.
【0004】[0004]
【発明が解決しようとする課題】この従来の枚葉式エッ
チング装置では、エッチング中に排気の元圧が変動する
と、半導体ウェーハ処理室の排気量も同様に変動し、エ
ッチング速度がばらついてしまい、その結果、エッチン
グパターン寸法のばらつきを生じてしまうという問題が
あった。In this conventional single-wafer etching apparatus, if the source pressure of exhaust gas fluctuates during etching, the amount of exhaust gas in the semiconductor wafer processing chamber also fluctuates, and the etching rate fluctuates. As a result, there is a problem that variations in etching pattern dimensions occur.
【0005】半導体ウェーハのパターン寸法がばらつい
てパターン異常になると、半導体装置の歩留低下や信頼
性低下に影響を及ぼす。[0005] When the pattern size of the semiconductor wafer varies and the pattern becomes abnormal, the yield and reliability of the semiconductor device are reduced.
【0006】近年、半導体装置の微細化に伴い、半導体
ウェーハ面内,半導体ウェーハ間のパターン寸法の均一
性向上は、半導体装置の品質に大きく寄与するところと
なった。In recent years, with the miniaturization of semiconductor devices, improvement in uniformity of pattern dimensions within a semiconductor wafer and between semiconductor wafers has greatly contributed to the quality of semiconductor devices.
【0007】本発明の目的は、半導体ウェーハ処理室内
での排気量の変動を抑えた半導体装置の製造装置を提供
することにある。An object of the present invention is to provide an apparatus for manufacturing a semiconductor device in which fluctuations in the amount of exhaust in a semiconductor wafer processing chamber are suppressed.
【0008】[0008]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体装置の製造装置は、測定機構
と、開閉機構と、制御機構とを有し、半導体ウェーハに
薬液をシャワー状に噴出させてエッチング処理を行う半
導体装置の製造装置であって、測定機構は、半導体ウェ
ーハ処理室の排気風速を測定する機構であって、半導体
ウェーハ処理室内の半導体ウェーハの側面近傍に配置し
たものであり、開閉機構は、排気配管の開閉度を調節す
る機構であり、制御機構は、前記測定機構からの排気風
速値に基づいて前記開閉機構による排気配管の開閉度を
制御し、薬液をシャワー状に噴出させている間、排気量
を定常に制御するものである。In order to achieve the above object, an apparatus for manufacturing a semiconductor device according to the present invention has a measuring mechanism, an opening / closing mechanism, and a control mechanism. by jetting apparatus for producing a semiconductor device for performing an etching process, the measurement mechanism, I mechanism der to measure the exhaust velocity of a semiconductor wafer processing chamber, the semiconductor
Place it near the side of the semiconductor wafer in the wafer processing chamber
The opening / closing mechanism is a mechanism for adjusting the opening / closing degree of the exhaust pipe , and the control mechanism controls the opening / closing degree of the exhaust pipe by the opening / closing mechanism based on the exhaust wind speed value from the measurement mechanism, The exhaust amount is controlled to be steady while the gas is jetted in a shower shape.
【0009】[0009]
【作用】半導体ウェーハ処理室の排気風速を測定し、前
記排気風速値から任意の数値に、排気配管の開閉度を調
節する機構と、半導体ウェーハ処理室の排気配管の開閉
度を制御するものである。A mechanism for measuring the exhaust air velocity of the semiconductor wafer processing chamber, adjusting the degree of opening and closing of the exhaust pipe from the exhaust air velocity to an arbitrary value, and controlling the degree of opening and closing of the exhaust pipe of the semiconductor wafer processing chamber. is there.
【0010】[0010]
【実施例】次に本発明について図面を参照して説明す
る。図1は、本発明の一実施例を示す断面模式図であ
る。図において、1はシャワーノズル、2は半導体ウェ
ーハ処理室、3は、半導体ウェーハ、4は回転部、6は
排気パイプ。13は排気配管、12はオートダンパであ
る。さらに、本発明は、風速センサ7と、基準入力部8
と、制御部9と、モータ駆動部10と、ステップモータ
11とを有する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a schematic sectional view showing an embodiment of the present invention. In the figure, 1 is a shower nozzle, 2 is a semiconductor wafer processing chamber, 3 is a semiconductor wafer, 4 is a rotating part, and 6 is an exhaust pipe. 13 is an exhaust pipe, and 12 is an automatic damper. Further, the present invention provides a wind speed sensor 7 and a reference input unit 8.
, A control unit 9, a motor drive unit 10, and a step motor 11.
【0011】半導体ウェーハ3を半導体ウェーハ処理室
2の回転部4へ搬入し、シャワーノズル1からの噴出薬
液5にてウェーハ3のエッチング処理を行う。The semiconductor wafer 3 is carried into the rotating part 4 of the semiconductor wafer processing chamber 2, and the wafer 3 is etched with the chemical solution 5 ejected from the shower nozzle 1.
【0012】一方、半導体ウェーハ処理室2内は、排気
パイプ6より排気する。その際、半導体ウェーハ処理室
2内の排気風速を、半導体ウェーハ処理室2の側面に設
置した風速センサで測定し、風速センサ7による風速測
定値と、基準入力部8により予め設定した設定値とを制
御部9により比較し、ある偏差値に達すると制御部9
は、モータ駆動部10に出力信号を発信する。On the other hand, the inside of the semiconductor wafer processing chamber 2 is exhausted from an exhaust pipe 6. At this time, the exhaust wind speed in the semiconductor wafer processing chamber 2 is measured by a wind speed sensor installed on the side surface of the semiconductor wafer processing chamber 2, and a measured value of the wind speed by the wind speed sensor 7 and a set value preset by the reference input unit 8. Are compared by the control unit 9, and when a certain deviation value is reached, the control unit 9
Sends an output signal to the motor drive unit 10.
【0013】モータ駆動部10は、ステップモータ11
を駆動させ、排気配管13に設けたオートダンパ12の
開閉度を自動的に調節する。The motor drive unit 10 includes a step motor 11
To automatically adjust the opening / closing degree of the auto damper 12 provided in the exhaust pipe 13.
【0014】エッチング終了後、半導体ウェーハ3は、
回転部4から搬出される。以上の動作が順次繰り返され
る。After completion of the etching, the semiconductor wafer 3 is
It is carried out from the rotating unit 4. The above operation is sequentially repeated.
【0015】図2は、実施例における一連の動作を示す
フローチャート図である。FIG. 2 is a flowchart showing a series of operations in the embodiment.
【0016】[0016]
【発明の効果】以上説明したように本発明は、半導体ウ
ェーハ処理室の排気風速値を測定し、最適とされる排気
風速になるようにダンパを自動的に開閉するため、排気
量を一定に保持することが可能となり、排気量の変動に
よるエッチング速度のばらつきの低減が実現できるとい
う効果を有する。As described above, the present invention measures the exhaust air velocity in the semiconductor wafer processing chamber and automatically opens and closes the damper so as to obtain the optimum exhaust air velocity. This has the effect that it becomes possible to reduce the variation in the etching rate due to the variation in the exhaust amount.
【図1】本発明の一実施例を示す断面模式図である。FIG. 1 is a schematic sectional view showing an embodiment of the present invention.
【図2】本発明の一実施例における一連の動作を示すフ
ローチャート図である。FIG. 2 is a flowchart showing a series of operations in one embodiment of the present invention.
【図3】従来例を示す断面模式図である。FIG. 3 is a schematic sectional view showing a conventional example.
【図4】従来例の動作を示すフローチャート図である。FIG. 4 is a flowchart showing the operation of the conventional example.
1 シャワーノズル 2 半導体ウェーハ処理室 3 半導体ウェーハ 4 回転部 5 噴出薬液 6 排気パイプ 7 風速センサ 8 基準入力部 9 制御部 10 モータ駆動部 11 ステップモータ 12 オートダンパ 13 排気配管 14 手動ダンパ 15 静止排気測定器 REFERENCE SIGNS LIST 1 shower nozzle 2 semiconductor wafer processing chamber 3 semiconductor wafer 4 rotating part 5 ejected chemical liquid 6 exhaust pipe 7 wind speed sensor 8 reference input part 9 control part 10 motor drive part 11 step motor 12 auto damper 13 exhaust pipe 14 manual damper 15 static exhaust measurement vessel
Claims (1)
有し、半導体ウェーハに薬液をシャワー状に噴出させて
エッチング処理を行う半導体装置の製造装置であって、 測定機構は、半導体ウェーハ処理室の排気風速を測定す
る機構であって、半導体ウェーハ処理室内の半導体ウェ
ーハの側面近傍に配置したものであり、 開閉機構は、排気配管の開閉度を調節する機構であり、 制御機構は、前記測定機構からの排気風速値に基づいて
前記開閉機構による排気配管の開閉度を制御し、薬液を
シャワー状に噴出させている間、排気量を定常に制御す
るものであることを特徴とする半導体装置の製造装置。An apparatus for manufacturing a semiconductor device having a measurement mechanism, an opening / closing mechanism, and a control mechanism, and performing an etching process by ejecting a chemical solution onto a semiconductor wafer in a shower shape, wherein the measurement mechanism comprises a semiconductor wafer. What mechanism der to measure the exhaust wind speed of the processing chamber, a semiconductor wafer processing chamber of a semiconductor weblog
Are those disposed in the vicinity of the side surface of Doha, opening and closing mechanism is a mechanism for adjusting the opening degree of the exhaust pipe, the control mechanism, the exhaust pipe by the opening and closing mechanism on the basis of the exhaust wind velocity from the measurement mechanism An apparatus for manufacturing a semiconductor device, wherein an opening / closing degree is controlled and an exhaust amount is controlled steadily while a chemical solution is jetted in a shower shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3078414A JP2901364B2 (en) | 1991-03-18 | 1991-03-18 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3078414A JP2901364B2 (en) | 1991-03-18 | 1991-03-18 | Semiconductor device manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04288832A JPH04288832A (en) | 1992-10-13 |
| JP2901364B2 true JP2901364B2 (en) | 1999-06-07 |
Family
ID=13661383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3078414A Expired - Fee Related JP2901364B2 (en) | 1991-03-18 | 1991-03-18 | Semiconductor device manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2901364B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58171819A (en) * | 1982-04-01 | 1983-10-08 | Toshiba Corp | Semiconductor processing apparatus |
| JPS614576A (en) * | 1984-06-15 | 1986-01-10 | Hoya Corp | Spraying method |
-
1991
- 1991-03-18 JP JP3078414A patent/JP2901364B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04288832A (en) | 1992-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7439221B2 (en) | Correction method, substrate processing device, and correction data generation device | |
| CN109786284B (en) | Substrate processing method and substrate processing device | |
| US6192898B1 (en) | Method and apparatus for cleaning a chamber | |
| US6096233A (en) | Method for wet etching of thin film | |
| US6197123B1 (en) | Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals | |
| KR19990029782A (en) | Semiconductor wafer temperature measurement and control device using gas temperature measurement and its method | |
| US7155319B2 (en) | Closed loop control on liquid delivery system ECP slim cell | |
| US6553332B2 (en) | Method for evaluating process chambers used for semiconductor manufacturing | |
| JP2901364B2 (en) | Semiconductor device manufacturing equipment | |
| KR20010039218A (en) | Method and apparatus for etching semiconductor wafer | |
| JP3908990B2 (en) | Local dry etching method | |
| JP2005012175A (en) | Substrate processing equipment and method for processing substrate | |
| JP7012602B2 (en) | Local dry etching equipment | |
| JPH07211693A (en) | Method for detecting end point of etching | |
| JP2002336761A (en) | Substrate rotation type treatment apparatus | |
| JP2953479B2 (en) | Resist coating apparatus and method | |
| US20040118436A1 (en) | Method and apparatus for thermal gas purging | |
| JP2629447B2 (en) | Chemical coating device | |
| JPH0325938A (en) | Manufacturing equipment for semiconductor device | |
| JPH1197420A (en) | Etching equipment | |
| JPH07176520A (en) | Semiconductor manufacturing device | |
| KR100875818B1 (en) | Vacuum regulator of chemical vapor deposition chamber | |
| JP2003249491A (en) | Cvd system and method | |
| KR100466295B1 (en) | Method for etching an edge face of a substrate | |
| US20050115672A1 (en) | Chemical etching process and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |