JP2908532B2 - Optical recording element - Google Patents
Optical recording elementInfo
- Publication number
- JP2908532B2 JP2908532B2 JP2173792A JP17379290A JP2908532B2 JP 2908532 B2 JP2908532 B2 JP 2908532B2 JP 2173792 A JP2173792 A JP 2173792A JP 17379290 A JP17379290 A JP 17379290A JP 2908532 B2 JP2908532 B2 JP 2908532B2
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- refractive index
- transparent resin
- layer
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 [発明の利用分野] この発明は、プラスチック基板の1主面上に、導電性
フィラーを混合した透明樹脂層を設けた、光記録素子に
関する。Description: FIELD OF THE INVENTION The present invention relates to an optical recording element in which a transparent resin layer mixed with a conductive filler is provided on one main surface of a plastic substrate.
[従来技術] 光記録素子用の基板材料には、ガラスとプラスチック
とがある。ガラス基板は高価であるが、種々の所要特性
が得られる。これに対して、プラスチック基板は量産性
に富み、しかも低コストである。[Prior Art] Substrate materials for optical recording elements include glass and plastic. Although glass substrates are expensive, various required characteristics can be obtained. On the other hand, a plastic substrate is rich in mass productivity and low in cost.
上記のプラスチック基板材料には、ポリカーボネート
樹脂や、エポキシ樹脂、アクリル樹脂、ポリエステル樹
脂等がある。これらの樹脂は絶縁性で帯電し易く、この
ためゴミが付着し易い。またこれらの樹脂は硬度が低
く、傷付き易い。そしてこれらのことは、ビットエラー
レート(以下BERという)を増し、素子の読み出し性能
の低下の原因となる。Examples of the plastic substrate material include a polycarbonate resin, an epoxy resin, an acrylic resin, and a polyester resin. These resins are insulative and are easily charged, so that dust easily adheres. In addition, these resins have low hardness and are easily damaged. These factors increase the bit error rate (hereinafter referred to as BER) and cause the read performance of the element to decrease.
上記の問題を解決するため、基板の読み出し面にSiO2
等の無機質膜を形成することが提案されている(特開昭
63−155,450号、特開昭63−292,441号参照)。In order to solve the above-mentioned problem, SiO 2
It has been proposed to form an inorganic film such as
63-155,450, and JP-A-63-292,441).
しかしながらこの構成の光記録素子を追試し、耐久性
能の評価のために環境試験を行ったところ、基板と無機
質膜との間に膨れが生じ、BERが低下することが判明し
た。このため、単純な無機質膜の形成とは異なる、帯電
防止処理が必要となる。However, when an optical recording element having this configuration was additionally tested and an environmental test was performed to evaluate durability performance, it was found that swelling occurred between the substrate and the inorganic film, and the BER was reduced. For this reason, antistatic treatment different from the formation of a simple inorganic film is required.
[発明の課題] この発明は、プラスチック基板の主面上に、屈折率n
が1.8よりも小さな導電性フィラーを混合した、透明樹
脂層を設けることにより、基板の帯電防止処理を行い、 (1) 透明樹脂層での光散乱を防止して、書き込み、
読み出し時のパワーロスを減少させ、 (2) ゴミの付着を防止し、 (3) 樹脂層でのパワーロスを減少させることによっ
て、樹脂層の膜圧の影響を抑制することを課題とする。[Problems of the Invention] The present invention provides a method for manufacturing a semiconductor device, comprising:
By providing a transparent resin layer in which a conductive filler smaller than 1.8 is mixed, antistatic treatment of the substrate is performed. (1) Light scattering in the transparent resin layer is prevented,
It is an object to reduce the influence of the film pressure of the resin layer by reducing the power loss at the time of reading, (2) preventing adhesion of dust, and (3) reducing the power loss in the resin layer.
[発明の構成と作用] この発明の光記録素子は、一方の主面上に光記録層を
形成したプラスチック基板の他方の主面上に、光の屈折
率が1.8未満の導電性フィラーを混合した透明樹脂層を
設けたことを特徴とする。[Configuration and Function of the Invention] The optical recording element of the present invention is obtained by mixing a conductive filler having a refractive index of light of less than 1.8 on the other main surface of a plastic substrate having an optical recording layer formed on one main surface. Characterized in that a transparent resin layer is provided.
一般に透明樹脂の屈折率は、1.5〜1.6程度である。こ
こに屈折率nの異なる導電性フィラーを混合すると、微
視的な屈折率の不均一性のため、記録・再生用のレーザ
光の散乱が生じる。樹脂層の圧さが場所により異なる
と、光散乱の程度も場所によって変化する。この結果、
樹脂層の厚さを厳密に制御し、光散乱の程度を一様にす
る必要も生じる。これは光散乱によってもたらされる、
第2の問題点である。Generally, the refractive index of the transparent resin is about 1.5 to 1.6. If a conductive filler having a different refractive index n is mixed here, laser light for recording / reproduction is scattered due to microscopic non-uniformity of the refractive index. If the pressure of the resin layer varies from place to place, the degree of light scattering also varies from place to place. As a result,
It is also necessary to strictly control the thickness of the resin layer to make the degree of light scattering uniform. This is caused by light scattering,
This is the second problem.
これに対して、この発明では、透明樹脂と屈折率が近
い導電性フィラーを用い、光散乱を防止する。フィラー
の屈折率nは1.8よりも小さくし、好ましくは1.7以下と
する。発明者は、SnO2にSbを添加した導電性フィラー
(屈折率nが2.0)では、光散乱のため素子の記録感度
が悪化するが、屈折率nが1.7のWO3とWO2の混合物(以
下WO3(WO2)として表す)等では感度の低下が生じない
ことを確認している。On the other hand, in the present invention, light scattering is prevented by using a conductive filler having a refractive index close to that of the transparent resin. The refractive index n of the filler is smaller than 1.8, preferably 1.7 or less. The inventors have found that, with a conductive filler obtained by adding Sb to SnO 2 (refractive index n is 2.0), the recording sensitivity of the element is deteriorated due to light scattering, but a mixture of WO 3 and WO 2 having a refractive index n of 1.7 ( It has been confirmed that sensitivity does not decrease in WO 3 (hereinafter referred to as WO 2 ) and the like.
なお屈折率は、光記録素子で通常に用いる波長であ
る、400nm〜850nmの範囲で測定するものとする。フィラ
ーは好ましくは、温度湿度や種々の環境に安定なセラミ
ックフィラーを用いるものとし、例えば屈折率が1.7程
度のWO3(WO2)や、屈折率が1.6程度のAl2O3とZrO2の混
合物、屈折率が1.7程度のCaWO4等を用いる。これらのフ
ィラーは、透明でかつ導電性を有する。フィラーはこれ
らのものを単独で用いても良いが、高屈折率のSnO2,SnO
2(Sb),In2O3(Sn),ZnO,TiOx,ZrO2等を少量混合して
も良い。この場合、フィラー全体の平均屈折率が1.8よ
りも小さければ(より好ましくは1.7以下であれば)良
い。なお()内の元素は、導電性を増すための原子価制
御不純物を示す。またフィラーの粒径は記録や再生に用
いる波長にも依存するが、数百Å〜数千Åが良い。透明
樹脂層は、基板読み出し面に設けるが、これに限らず光
記録層側の面にも設けても良い。Note that the refractive index is measured in the range of 400 nm to 850 nm, which is a wavelength normally used in an optical recording element. The filler preferably uses a ceramic filler that is stable to temperature and humidity and various environments. For example, WO 3 (WO 2 ) having a refractive index of about 1.7 or Al 2 O 3 and ZrO 2 having a refractive index of about 1.6 is used. A mixture such as CaWO 4 having a refractive index of about 1.7 is used. These fillers are transparent and have conductivity. These fillers may be used alone, but high refractive index SnO 2 , SnO 2
2 (Sb), In 2 O 3 (Sn), ZnO, TiOx, ZrO 2 and the like may be mixed in a small amount. In this case, it is sufficient if the average refractive index of the entire filler is smaller than 1.8 (more preferably, 1.7 or less). Elements in parentheses indicate valence controlling impurities for increasing conductivity. The particle size of the filler depends on the wavelength used for recording and reproduction, but is preferably several hundreds to several thousand. The transparent resin layer is provided on the substrate reading surface, but is not limited thereto, and may be provided on the surface on the optical recording layer side.
[実施例] 第1図に、実施例の光記録素子を示す。図において、
2はポリカーボネート樹脂製のディスク状透明プラスチ
ック基板で(直径130mm)、エポキシ樹脂やポリエステ
ル樹脂、アモルファスポリオレフィン樹脂、あるいはア
クリル樹脂等の任意の透明プラスチック基板に変えるこ
とができる。Embodiment FIG. 1 shows an optical recording element of an embodiment. In the figure,
Reference numeral 2 denotes a disc-shaped transparent plastic substrate made of polycarbonate resin (130 mm in diameter), which can be changed to any transparent plastic substrate such as epoxy resin, polyester resin, amorphous polyolefin resin, or acrylic resin.
4は、基板2の一主面上に設けた下部誘電体層で、こ
こでは非晶質のイットリウム・サイアロン(YSiAlON)
とした。下部誘電体層4には、これ以外に例えば窒化シ
リコン,窒化アルミニウム,窒化チタン,炭化シリコ
ン,硫化カドミウム,硫化亜鉛,フッ化マグネシウム,
酸化アルミニウム,酸化セリウム,酸化ジルコニウム,
酸化シリコン,酸化カドミウム,酸化ビスマス等を用い
る。Reference numeral 4 denotes a lower dielectric layer provided on one main surface of the substrate 2, in this case, amorphous yttrium sialon (YSiAlON)
And The lower dielectric layer 4 may further include, for example, silicon nitride, aluminum nitride, titanium nitride, silicon carbide, cadmium sulfide, zinc sulfide, magnesium fluoride,
Aluminum oxide, cerium oxide, zirconium oxide,
Silicon oxide, cadmium oxide, bismuth oxide, or the like is used.
6は光記録層で、プラスチック基板2に垂直な磁化方
向を持った、非晶質薄膜を用いる。このような薄膜の材
料には、GdDyFe,GdTbFe,TbFeCo,DyFeCo,GdTbDyFe,GdTbF
eCo,TbDyFeCo,GdDyFeCo,NdGdDyFe,NdDyFeCo,NdGdDyFeCo
等が有る。Reference numeral 6 denotes an optical recording layer, which uses an amorphous thin film having a magnetization direction perpendicular to the plastic substrate 2. GdDyFe, GdTbFe, TbFeCo, DyFeCo, GdTbDyFe, GdTbF
eCo, TbDyFeCo, GdDyFeCo, NdGdDyFe, NdDyFeCo, NdGdDyFeCo
And so on.
8は上部誘電体層で、下部誘電体層4と同様に、イッ
トリウム・サイアロンを用い、10はAlやTi,Cr,Cu,Ag,A
u,SUS等の金属反射層である。12は樹脂保護層で、アク
リル三エステル系や、エポキシ系、ポリエステル系、ア
クリル系、アクリルウレタン系等の紫外線硬化樹脂等を
用いる。樹脂保護層12は設けなくても良く、あるいは樹
脂保護層12に導電性フィラーを混合し、光記録層6側の
帯電防止処理を行っても良い。Reference numeral 8 denotes an upper dielectric layer, similarly to the lower dielectric layer 4, using yttrium sialon. Reference numeral 10 denotes Al, Ti, Cr, Cu, Ag, A.
u, SUS or other metal reflective layer. Reference numeral 12 denotes a resin protective layer, which is made of an ultraviolet curable resin such as acrylic triester, epoxy, polyester, acrylic, and acrylic urethane. The resin protective layer 12 may not be provided, or a conductive filler may be mixed into the resin protective layer 12 to perform antistatic treatment on the optical recording layer 6 side.
14は、基板2の読み出し面に設けた透明樹脂層で、透
明樹脂に屈折率nが1.8よりも小さな、好ましくは屈折
率nが1.7以下の、導電性フィラー混合したものであ
る。透明樹脂の材料には、アクリル酸エステル系や、エ
ポキシ系、ポリエステル系、アクリル系、アクリルウレ
タン系等の紫外線硬化樹脂等を用い、これらの屈折率は
一般に1.5〜1.6である。Reference numeral 14 denotes a transparent resin layer provided on the readout surface of the substrate 2, which is obtained by mixing a transparent resin with a conductive filler having a refractive index n smaller than 1.8, preferably 1.7 or less. As a material of the transparent resin, an ultraviolet-curing resin such as an acrylate, an epoxy, a polyester, an acrylic, or an acrylic urethane is used, and the refractive index thereof is generally 1.5 to 1.6.
フィラーには導電性で透明のものを用い、粒径は数百
〜数千Å程度とする。また屈折率nは400〜850nmの波長
で測定する。フィラーに好ましい材料は、例えば屈折率
nが1.7程度のWO3(WO2)、屈折率が1.6程度のZrO2で導
電体化したAl2O3(ZrO2とAl2O3の混合物)、屈折率が1.
7程度のCaWO4である。勿論これらの材料に、より高屈折
率のIn2O3(Sn)(n≒2.0),SnO2(n≒2.0),SnO2(S
b)(n≒2.0),ZnO(n≒2.1),TiOx(n≒2.2),ZrO2
(n≒2.05)等を少量混合しても良い。透明樹脂層14の
膜厚は例えば5μmとし、好ましくは1〜15μm、より
好ましくは3〜10μmとする。A conductive and transparent filler is used, and the particle size is about several hundreds to several thousand degrees. The refractive index n is measured at a wavelength of 400 to 850 nm. Preferred materials for the filler include, for example, WO 3 (WO 2 ) having a refractive index n of about 1.7, Al 2 O 3 (a mixture of ZrO 2 and Al 2 O 3 ) made conductive with ZrO 2 having a refractive index of about 1.6, Refractive index is 1.
It is about 7 CaWO 4 . Of course, these materials have higher refractive indices of In 2 O 3 (Sn) (n ≒ 2.0), SnO 2 (n ≒ 2.0), and SnO 2 (S
b) (n ≒ 2.0), ZnO (n ≒ 2.1), TiOx (n ≒ 2.2), ZrO 2
(N ≒ 2.05) may be mixed in a small amount. The thickness of the transparent resin layer 14 is, for example, 5 μm, preferably 1 to 15 μm, and more preferably 3 to 10 μm.
ポリカーボネート基板2の1主面上に、スピンコート
法で、導電性フィラーを加えた透明樹脂層14を、厚さ5
μmに形成した。透明樹脂には、アクリル系の紫外線硬
化樹脂12(大日本インキ(株)製の“SD17",“SD17"は
商品名)を用いた。フィラーには、実施例のWO3(WO2)
や、Al2O3とZrO2の混合物,CaWO4の他に、比較例としてS
nO2(Sb)を用い、最大粒径で1μm、平均粒径で数百
〜数千Åのものを用いた。樹脂中のフィラー含有量は3
〜70重量%の範囲で実験した。フィラーの好ましい含有
量は樹脂の全量に対し3〜70重量%で、より好ましくは
3〜60重量%とする。導電性の高いフィラーでは、3重
量%でも十分な効果が得られ、樹脂と屈折率の近い材料
では70重量%まで加えても問題は生じない。紫外線硬化
樹脂は、ブタノール・IPA混合溶媒に溶解させ、スピン
コート後に、紫外線で硬化させた。最初に透明樹脂層14
を形成するのは、光記録層6等の形成過程で、読み出し
面にゴミ等が混入するのを防止するためである。勿論光
記録層6等の形成後に、透明樹脂層14を形成しても良
い。ブタノール・IPA溶媒はスピンコート中に蒸発し、
加熱しても透明樹脂層14の硬度変化を確認できなかっ
た。On one main surface of the polycarbonate substrate 2, a transparent resin layer 14 to which a conductive filler is added by a spin coating method is applied to a thickness of 5
It was formed to a thickness of μm. As the transparent resin, an acrylic ultraviolet curable resin 12 ("SD17", "SD17" manufactured by Dainippon Ink and Chemicals, Inc., trade names) was used. As the filler, WO 3 (WO 2 ) of the example was used.
In addition to the mixture of Al 2 O 3 and ZrO 2 , CaWO 4 , as a comparative example,
nO 2 (Sb) having a maximum particle diameter of 1 μm and an average particle diameter of several hundred to several thousand Å was used. Filler content in resin is 3
Experiments were performed in the range of ~ 70% by weight. The preferable content of the filler is 3 to 70% by weight, more preferably 3 to 60% by weight based on the total amount of the resin. In the case of a filler having high conductivity, a sufficient effect can be obtained even with 3% by weight, and a material having a refractive index close to that of a resin does not cause any problem even if added up to 70% by weight. The ultraviolet-curable resin was dissolved in a butanol / IPA mixed solvent, spin-coated, and then cured with ultraviolet light. First, the transparent resin layer 14
Is formed in order to prevent dust and the like from entering the readout surface in the process of forming the optical recording layer 6 and the like. Of course, the transparent resin layer 14 may be formed after the formation of the optical recording layer 6 and the like. Butanol / IPA solvent evaporates during spin coating,
No change in hardness of the transparent resin layer 14 could be confirmed even when heated.
マグネトロンスパッタリング装置により、基板2の他
方の主面上に非晶質のイットリウム・サイアロン膜4を
920Å厚にスパッタリングし、次いでTi原子を含むGdDyF
eの垂直磁化膜からなる光記録層6を200Åに形成した。
更に上記と同じイットリウム・サイアロンを300Å厚に
形成して上部誘電体層8とし、この上にAl金属反射膜10
を800Å厚に積層した。金属反射膜10上に、アクリル系
の紫外線硬化樹脂(前記と同じSD17)をスピンコート
し、5μm厚の樹脂保護層12とした。An amorphous yttrium sialon film 4 is formed on the other main surface of the substrate 2 by a magnetron sputtering apparatus.
GdDyF sputtered to 920mm thickness, then containing Ti atoms
The optical recording layer 6 consisting of the perpendicular magnetization film of e was formed at 200 °.
Further, the same yttrium sialon as described above is formed in a thickness of 300 mm to form an upper dielectric layer 8, on which an Al metal reflective film 10 is formed.
Was laminated to a thickness of 800 mm. An acrylic UV curable resin (same SD17 as above) was spin-coated on the metal reflective film 10 to form a resin protective layer 12 having a thickness of 5 μm.
製造後の光記録素子について、透明樹脂層14の比抵抗
と最適記録感度の変化量を測定した。結果を表に示す。
表中の試料AはWO3(WO2)含有量が40重量%、試料Bで
は60重量%である、試料CではSnO2含有量が7重量%で
ある。For the manufactured optical recording element, the specific resistance of the transparent resin layer 14 and the amount of change in the optimum recording sensitivity were measured. The results are shown in the table.
Sample A in the table has a WO 3 (WO 2 ) content of 40% by weight, sample B has a content of 60% by weight, and sample C has a SnO 2 content of 7% by weight.
表から明らかなように、屈折率nが1.8よりも小さなW
O3(WO2)を用いた実施例では、最適記録感度の変化が
小さい。これは透明樹脂層14での光散乱が生じず、パワ
ーロスが小さいことを意味する。またWO3(WO2)以外
に、ZrO2とAl2O3の混合物や、CaWO4でも、3〜60重量%
の添加範囲で、WO3(WO2)と同様、最適記録感度の変化
は僅かであった。As is clear from the table, the refractive index n is smaller than 1.8.
In the example using O 3 (WO 2 ), the change in the optimum recording sensitivity is small. This means that light scattering does not occur in the transparent resin layer 14 and the power loss is small. Further in addition to WO 3 (WO 2), a mixture or ZrO 2 and Al 2 O 3, even CaWO 4, 3 to 60 wt%
, The change in the optimum recording sensitivity was slight as in WO 3 (WO 2 ).
[発明の効果] この発明では、一方の主面上に光記録層を形成したプ
ラスチック基板の他方の主面上に、屈折率が1.8未満の
導電性フィラーを混合した、透明樹脂層を設ける。 [Effects of the Invention] In the present invention, a transparent resin layer containing a conductive filler having a refractive index of less than 1.8 is provided on the other main surface of a plastic substrate having an optical recording layer formed on one main surface.
このようにすると、透明樹脂とフィラーとの屈折率の
差が小さいため、透明樹脂層での光散乱をおさえ、記録
・再生に必要な光エネルギーを小さくすることができ
る。In this case, since the difference in the refractive index between the transparent resin and the filler is small, light scattering in the transparent resin layer can be suppressed, and the light energy required for recording and reproduction can be reduced.
フィラーによる光散乱が少ないため、フィラー含有量
を大きくでき、この結果高導電性の透明樹脂層の形成が
可能になる。Since light scattering by the filler is small, the filler content can be increased, and as a result, a highly conductive transparent resin layer can be formed.
そして透明樹脂層は、フィラーで導電化され、ゴミの
付着が少ない。Then, the transparent resin layer is made conductive by the filler, and the adhesion of dust is small.
また光散乱が小さいため、透明樹脂層の膜厚のむらが
許容でき、基板の内周と外周とで透明樹脂層に膜厚差が
有っても、記録特性が変化しない。Further, since light scattering is small, unevenness in the thickness of the transparent resin layer can be tolerated, and the recording characteristics do not change even if there is a difference in the thickness of the transparent resin layer between the inner circumference and the outer circumference of the substrate.
更にフィラーにセラミックを用いると、温度湿度に安
定で、種々の環境での耐久性に優れた透明樹脂層が得ら
れる。Further, when ceramic is used for the filler, a transparent resin layer which is stable to temperature and humidity and has excellent durability in various environments can be obtained.
第1図は、実施例の光記録素子の断面図である。 図において、 2……プラスチック基板、4……下部誘電体層、 6……光記録層、8……上部誘電体層、 10……金属反射層、12……樹脂保護層、 14……透明樹脂層。 FIG. 1 is a sectional view of an optical recording element according to an embodiment. In the figure, 2 ... plastic substrate, 4 ... lower dielectric layer, 6 ... optical recording layer, 8 ... upper dielectric layer, 10 ... metal reflective layer, 12 ... resin protective layer, 14 ... transparent Resin layer.
Claims (2)
チック基板の他方の主面上に、光の屈折率が1.8未満の
導電性フィラーを混合した透明樹脂層を設けたことを特
徴とする、光記録素子。1. A plastic substrate having an optical recording layer formed on one main surface, and a transparent resin layer mixed with a conductive filler having a light refractive index of less than 1.8 is provided on the other main surface of the plastic substrate. An optical recording element.
合物,WO3とWO2の混合物又はCaWO4のうちの少なくとも一
種としたことを特徴とする、請求項1記載の光記録素
子。2. The light according to claim 1, wherein said conductive filler is at least one of a mixture of ZrO 2 and Al 2 O 3, a mixture of WO 3 and WO 2 or CaWO 4. Recording element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2173792A JP2908532B2 (en) | 1990-06-30 | 1990-06-30 | Optical recording element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2173792A JP2908532B2 (en) | 1990-06-30 | 1990-06-30 | Optical recording element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0467335A JPH0467335A (en) | 1992-03-03 |
| JP2908532B2 true JP2908532B2 (en) | 1999-06-21 |
Family
ID=15967243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2173792A Expired - Fee Related JP2908532B2 (en) | 1990-06-30 | 1990-06-30 | Optical recording element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2908532B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910207B1 (en) * | 2007-10-23 | 2009-07-30 | 이태영 | Cylindrical Load Jack |
-
1990
- 1990-06-30 JP JP2173792A patent/JP2908532B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0467335A (en) | 1992-03-03 |
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