JP2909708B2 - Surface conduction electron-emitting device, electron source, image forming apparatus, and method of manufacturing these - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source using a plurality of surface conduction electron-emitting devices, an image forming apparatus using the same, such as a display device or an exposure device, and an electron source and an image forming apparatus. Regarding the manufacturing method.

[0002]

2. Description of the Related Art A surface conduction electron-emitting device utilizes a phenomenon in which an electron is emitted by passing a current through a conductive thin film formed on an insulating substrate in parallel with the film surface.

As a typical configuration example of a surface conduction electron-emitting device, a conductive thin film such as a metal oxide which connects a pair of device electrodes provided on an insulating substrate is referred to as forming in advance. One in which an electron-emitting portion is formed by an energization process is exemplified. Forming is usually performed by applying a voltage to both ends of the conductive thin film and conducting electricity.The conductive thin film is locally destroyed, deformed or altered to change its structure, and the electron-emitting portion is in an electrically high-resistance state. Is a process of forming The electron emission is performed from the vicinity of a crack generated in the electron emission portion by applying a voltage to the conductive thin film on which the electron emission portion is formed and causing a current to flow.

[0004] The above-mentioned electron-emitting device has an advantage that it can be formed in a large number over a large area because of its simple structure and easy manufacture. Therefore, various applications for utilizing this feature are being studied. For example, it can be used for an image forming apparatus such as a display device.

Conventionally, as an example of arranging a large number of surface conduction electron-emitting devices, the electron-emitting devices are arranged in parallel, and both ends (both device electrodes) of each electron-emitting device are interconnected (also referred to as a common interconnect). ), An electron source in which a number of rows each connected in () is also arranged (also referred to as a trapezoidal arrangement) (JP-A-1-313332, JP-A-1-283737, and JP-A-2-257552). In particular, in the case of a display device, a flat panel display device similar to a display device using liquid crystal can be used, and a large number of surface conduction electron-emitting devices are used as self-luminous display devices that do not require a backlight. A display device has been proposed in which an arranged electron source is combined with a phosphor that emits visible light when irradiated with an electron beam from the electron source (US Pat. No. 5,066,883).

In a display device using the above-mentioned surface conduction electron-emitting device, in order to obtain a high-quality and high-definition image on a large screen, the number of rows and columns of the electron-emitting device is several hundred to several thousand, respectively. It is necessary to arrange a very large number of electron-emitting devices. Therefore, it is desired that the electrical characteristics of each electron-emitting device be uniform and easy to control.

[0007]

However, in an image forming apparatus using a surface conduction electron-emitting device,
It is still difficult to say that the luminance of a self-luminous display device is sufficiently high, and an image forming apparatus with higher luminance is desired.

An object of the present invention is to provide an image forming apparatus having a high brightness as described above, and an electron source which can form the image forming apparatus and has uniform and good electron emission characteristics, and furthermore, the electron source And a method of manufacturing the same.

[0009]

Means and operation for solving the problems] of claim 1 the invention is a method of manufacturing a surface conduction electron-emitting device, an insulating
A pair of device electrodes and a conductor for communicating between the device electrodes on the conductive substrate.
Forming an electroconductive thin film and forming an electron emitting portion on the electroconductive thin film;
After that, organic gold containing alkaline earth metal or rare earth element
A voltage is applied between the device electrodes in the presence of
Alkaline earth metal or rare earth element
The layers are stacked .

[0010] The invention according to claim 2 is manufactured by the above method.
This is a manufactured surface conduction electron-emitting device.

Further, the invention of claims 5 and 6 is an electron source using a plurality of the surface conduction electron-emitting devices, and the invention of claims 7 and 8 is an image forming apparatus using the electron source, and claims 9 to
The eleventh invention is a method for producing these.

According to the present invention, the cathode side of an electron emitting portion in a surface conduction electron-emitting device is covered with a metal layer having a low work function, thereby increasing the amount of electrons extracted from the cathode and improving the luminance. It is.

The surface conduction electron-emitting device according to the present invention includes a planar type and a vertical type. First, the basic structure of the plane type surface conduction electron-emitting device will be described.

FIGS. 1A and 1B are diagrams showing a basic structure of a flat surface conduction electron-emitting device.

In FIG. 1, 1 is a substrate, 2 is an electron-emitting portion,
Reference numeral 3 denotes a conductive thin film, reference numerals 4 and 5 denote device electrodes, and reference numeral 6 denotes a layer containing an alkaline earth metal or a rare earth element (hereinafter referred to as "second layer").

As the substrate 1, for example, quartz glass, Na
And glass having reduced impurity content such as glass, blue plate glass, a laminate obtained by laminating SiO ₂ on a blue plate glass by a sputtering method or the like, and ceramics such as alumina.

The materials of the opposing device electrodes 4 and 5 include:
Common conductor materials are used, such as Ni, Cr, Au,
Metals or alloys such as Mo, W, Pt, Ti, Al, Cu, Pd and Pd, As, Ag, Au, RuO ₂ , Pd
Metal or metal oxide and printed conductor composed of glass or the like, such as -ag, is appropriately selected from a semiconductor conductive materials such as transparent conductor and polysilicon or the like In ₂ O ₃ -SnO _2.

The element electrode interval L, the element electrode length W, the shape of the conductive thin film 3 and the like are designed according to the applied form and the like.

The distance L between the device electrodes is preferably several hundred μm to several hundred μm, and more preferably several μm to several tens μm in consideration of the voltage applied between the device electrodes 4 and 5. .

The element electrode length W is preferably several μm to several hundred μm in consideration of the resistance value and electron emission characteristics of the electrode, and the element electrode thickness d is several hundred μm to several μm.

The surface conduction electron-emitting device shown in FIG. 1 has a structure in which device electrodes 4 and 5 and a conductive thin film 3 are laminated on a substrate 1 in this order. The conductive thin film 3 and the device electrodes 4 and 5 may be stacked in this order.

In order to obtain good electron emission characteristics, the conductive thin film 3 is particularly preferably a fine particle film composed of fine particles. It is appropriately selected according to the resistance value between the electrodes 4 and 5 and the forming conditions described later. The thickness of the conductive thin film 3 is preferably several Å to several thousand Å, particularly preferably 10 to 500 、, and its resistance value is 10 to 500 Å.
The sheet resistance is ³ to 10 ⁷ Ω / □.

Examples of the material constituting the conductive thin film 3 include Pd, Pt, Ru, Ag, Au, Ti, In, and C.
Examples thereof include metals such as u, Cr, Fe, Zn, Sn, Ta, W, and Pb.

The fine particle film is a film in which a plurality of fine particles are gathered, and has a fine structure not only in a state in which the fine particles are individually dispersed and arranged, but also in a state in which the fine particles are adjacent to each other or overlap each other (island shape). ). In the case of a fine particle film, the particle size of the fine particles is preferably several to several thousand, and particularly preferably 10 to 200.

The electron emitting portion 2 contains a crack, and the electron emission is performed from the vicinity of the crack. The electron-emitting portion 2 including the crack and the crack itself are formed depending on the thickness, the film quality, the material of the conductive thin film 3 and the manufacturing method such as forming conditions described later. Therefore, the position and shape of the electron-emitting portion 2 are not limited to the position and shape as shown in FIG.

In the present invention, the second layer 6 is a layer containing an alkali metal earth or a rare earth element, and is preferably La, Ba, Sc, Sr or the like which can be easily obtained as a film forming material.

Next, the basic structure of the vertical surface conduction electron-emitting device will be described.

FIG. 2 is a view showing a basic structure of a vertical electron-emitting device. In FIG. 2, reference numeral 21 denotes a step forming member.
The same reference numerals indicate the same members.

The substrate 1, the electron-emitting portion 2, the conductive thin film 3, and the device electrodes 4 and 5 are made of the same material as that of the above-mentioned flat-type electron-emitting device.

The step forming member 21 is formed by, for example, a vacuum evaporation method.
It is made of an insulating material such as SiO ₂ provided by a printing method, a sputtering method or the like. The film thickness of the step forming member 21 corresponds to the device electrode interval L (see FIG. 1) of the flat-type electron-emitting device described above. It is set according to the applied voltage or the like, but is preferably several hundreds of mm to several tens of μm, and particularly preferably several hundreds of mm to several μm.

Since the conductive thin film 3 is usually formed after the formation of the device electrodes 4 and 5, the conductive thin film 3 is laminated on the device electrodes 4 and 5. It is also possible to form such that the device electrodes 4 and 5 are laminated on the conductive thin film 3. As described in the description of the flat-type electron-emitting device, the formation of the electron-emitting portion 2 depends on the thickness, the film quality, the material of the conductive thin film 3 and the manufacturing method such as forming conditions described later. The shape and shape are not limited to the position and shape as shown in FIG.

In the following description, the plane type electron-emitting device and the vertical type electron-emitting device will be described by taking the plane-type electron-emitting device as an example. Is also good.

Various methods are conceivable for producing the surface conduction electron-emitting device. One example will be described with reference to FIG. In FIG. 3, the same reference numerals as those in FIG. 1 indicate the same members.

1) After sufficiently cleaning the substrate 1 with a detergent, pure water, and an organic solvent, depositing an element electrode material by a vacuum evaporation method, a sputtering method, or the like, and then depositing the element on the surface of the substrate 1 by a photolithography technique. Electrodes 4 and 5 are formed (FIG. 3A).

2) An organic metal solution is applied onto the substrate 1 on which the device electrodes 4 and 5 are provided, and the solution is allowed to stand.
And an element electrode 5 are connected to form an organic metal thin film.
The organic metal solution is a solution of an organic compound containing a metal as a constituent element of the conductive thin film 3 as a main element. Thereafter, the organic metal thin film is heated and baked to form a conductive thin film 3 patterned by lift-off, etching, or the like (FIG. 3B). Here, the description has been given of the method of applying the organic metal solution. However, the present invention is not limited thereto. For example, the organic metal solution may be formed by a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method, or the like. A film can also be formed.

3) Subsequently, an energization process called forming is performed. When electricity is supplied from a power supply (not shown) between the device electrodes 4 and 5, an electron-emitting portion 2 having a changed structure is formed at the portion of the conductive thin film 3 (FIG. 3C). The conductive thin film 3 is locally destroyed, deformed or deteriorated by this energization process, and the portion where the structure is changed is the electron emitting portion 2.

FIG. 4 shows an example of the voltage waveform of the forming.

The voltage waveform is particularly preferably a pulse waveform.
There are a case where a voltage pulse with a constant pulse peak value is continuously applied (FIG. 4A) and a case where a voltage pulse is applied while increasing the pulse peak value (FIG. 4B).

First, the case where the pulse peak value is a constant voltage will be described with reference to FIG.

In FIG. 4A, T ₁ and T ₂ are the pulse width and pulse interval of the voltage waveform. For example, T ₁ is 1 μm.
sec~10msec, the T ₂ 10μsec~100m
The peak value (peak voltage at the time of forming) is appropriately selected according to the form of the above-described electron-emitting device, and is applied for several seconds to several tens of minutes in a vacuum atmosphere having an appropriate degree of vacuum. Note that the voltage waveform to be applied is not limited to the illustrated triangular wave, and a desired waveform such as a rectangular wave can be used.

Next, a case where a voltage pulse is applied while increasing the pulse peak value will be described with reference to FIG.

T ₁ and T ₂ in FIG.
As in (a), the peak value (peak voltage at the time of forming) is increased by, for example, about 0.1 V steps,
The voltage is applied in an appropriate vacuum atmosphere similar to that described with reference to FIG.

During the pulse interval T ₂ , the conductive thin film 3
(See FIGS. 1 and 2) The element current is measured at a voltage that does not cause local destruction, deformation, or deterioration of the element, for example, a voltage of about 0.1 V, and the resistance value is obtained. Finish forming.

4) Next, a volatile compound containing a rare earth element such as La or Sr or an alkaline earth metal is used as a gas source, a voltage is applied between the device electrodes, and an electron is deposited by MOCVD (metalorganic CVD). A second layer is formed by depositing a film of an alkaline earth metal or a rare earth element on the cathode side of the emission section (FIG. 3D).

In the present invention, the volatile compound is
Compounds such as metal halides, organic complexes and metal alkoxides are used. Specifically, bis dipivaloylmethanato lanthanum _{(La (C 11 H 19 O} 2) 3), bis dipivaloylmethanato barium _{(Ba (C 11 H 19 O} 2) 3, bis dipivaloylmethanate Scandium (Sc (C ₁₁ H ₁₉
O _{2) 3),} there is a bis dipivaloylmethanato strontium _{(Sr (C 11 H 19 O} 2) 3 and the like. Further, the second layer in the present invention need not be continuous films, discontinuous film, It may be a discontinuous film.

The basic characteristics of the surface conduction electron-emitting device thus obtained will be described below.

FIG. 5 is a schematic configuration diagram showing an example of a measurement evaluation system for measuring the electron emission characteristics of the surface conduction electron-emitting device. First, this measurement evaluation system will be described.

In FIG. 5, the same reference numerals as those in FIG. 1 denote the same members. Reference numeral 51 denotes a power supply for applying a device voltage _Vf to the device, 50 denotes an ammeter for measuring a device current _If flowing through the conductive thin film 3 between the device electrodes 4 and 5, and 54 denotes an electron emitting portion. An anode electrode for capturing the emission current _Ie emitted, 53 is a high-voltage power supply for applying a voltage to the anode electrode 54, 52 is an ammeter for measuring the emission current _Ie , 55 is a vacuum device, 56 Is an exhaust pump.

The electron-emitting device and the anode electrode 54 are installed in a vacuum device 55. The vacuum device 55 is provided with necessary equipment such as a vacuum system (not shown). Can be measured and evaluated.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultrahigh vacuum system such as an ion pump.
The entire vacuum device 55 and the substrate 1 of the electron-emitting device are
The heater can heat up to about 200 ° C. In this measurement evaluation system, the display panel and its inside are configured as a vacuum device 55 and its inside at the stage of assembling a display panel (see 201 in FIG. 8) as described later, so that the above-described forming step and its The present invention can be applied to measurement evaluation and processing in subsequent steps.

The basic characteristics of the surface conduction type electron-emitting device described below were measured by setting the voltage of the anode electrode 54 of the above-mentioned measurement and evaluation system to 1 kV to 10 kV and setting the distance H between the anode electrode 54 and the electron-emitting device to 2 to 8 mm. It is based on measurements.

First, the emission current I _e and the device current _If ,
FIG. 6 shows a typical example of the relationship with the element voltage _Vf . still,
In FIG. 6, since the emission current _Ie is significantly smaller than the device current _If , it is shown in arbitrary units.

As is apparent from FIG. 6, the electron-emitting device has the following three characteristic characteristics with respect to the emission current _Ie .

First, the element voltage V _f of the electron-emitting device is higher than a certain voltage (called a threshold voltage: V _{th in} FIG. 6).
Is applied, the emission current _Ie sharply increases, while the emission current _Ie is hardly detected below the threshold voltage _Vth .
That is, it is a non-linear element having a clear threshold voltage V _th with respect to the emission current I _e .

Second, since the emission current _Ie has a characteristic that monotonously increases with respect to the device voltage _Vf (referred to as MI characteristic), the emission current _Ie can be controlled by the device voltage _Vf .

Third, the emission charge trapped by the anode electrode 54 (see FIG. 5) depends on the time during which the device voltage _Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time during which the device voltage _Vf is applied.

The emission current _Ie is equal to MI with respect to the device voltage _Vf .
At the same time having a characteristic, it may have a MI characteristic with respect to the device current I _f also the device voltage V _f. FIG. 6A shows an example of the characteristics of such a surface conduction electron-emitting device. On the other hand, as shown in FIG. 6B, the device current _If changes with respect to the device voltage _Vf by a voltage-controlled negative resistance characteristic (VCN).
R characteristic). Which characteristic is exhibited depends on the manufacturing method of the electron-emitting device, the measurement conditions at the time of measurement, and the like. Also, V device current I _f is the element voltage V _f
Even in an electron-emitting device having CNR characteristics, the emission current _Ie has MI characteristics with respect to the device voltage _Vf .

Next, the arrangement of the surface conduction electron-emitting devices in the electron source of the present invention will be described.

The arrangement of the surface conduction electron-emitting devices in the electron source of the present invention is not limited to the ladder arrangement as described in the section of the prior art, or to the arrangement of n Y-directions on m X-direction wirings. There is an arrangement method in which directional wiring is provided via an interlayer insulating layer, and an X-directional wiring and a Y-directional wiring are connected to a pair of device electrodes of the electron-emitting device, respectively. This is hereinafter referred to as a simple matrix arrangement. First, the simple matrix arrangement will be described in detail.

According to the above-described basic characteristics of the surface conduction type electron-emitting device, the emitted electrons in the electron-emitting device arranged in a simple matrix have a voltage exceeding the threshold voltage.
It can be controlled by the peak value and pulse width of the pulse voltage applied between the opposing element electrodes. On the other hand, below the threshold voltage, almost no electrons are emitted. Therefore, even when a large number of electron-emitting devices are arranged, if the pulse-like voltage is appropriately applied to each of the devices, the electron-emitting device can be selected according to the input signal, and the amount of electron emission can be controlled. Individual electron-emitting devices can be selected and driven independently only by the matrix wiring.

The simple matrix arrangement is based on such a principle, and the structure of the electron source having the simple matrix arrangement, which is an example of the electron source of the present invention, will be further described with reference to FIG.

In FIG. 7, the substrate 1 is a glass plate or the like as described above, and the number and shape of the surface conduction electron-emitting devices 104 arranged on the substrate 1 are appropriately set according to the application. is there.

The m X-directional wirings 102 have external terminals D _x1 , D _x2 ,..., D _xm , respectively.
The conductive metal is formed by a vacuum deposition method, a printing method, a sputtering method, or the like. Further, the material, the film thickness, and the wiring width are set so that the voltage is supplied to the many electron-emitting devices 104 almost uniformly.

The n number of Y direction wirings 103 have external terminals D _y1 , D _y2 ,..., D _yn , respectively.
02 is created in the same way as the above.

These m X-directional wires 102 and n Y wires
An interlayer insulating layer (not shown) is provided between the direction wirings 103, and is electrically separated to form a matrix wiring. Note that both m and n are positive integers.

The interlayer insulating layer (not shown) is made of SiO ₂ or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like, and has a desired shape on the entire surface or a part of the substrate 1 on which the X-direction wiring 102 is formed. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 102 and the Y-direction wiring 103.

Further, device electrodes (not shown) opposed to the electron-emitting devices 104 are formed by m X-directional wirings 102, n Y-directional wirings 103, a vacuum deposition method, a printing method, a sputtering method, or the like. Electrically connected by a connection 105 made of a conductive metal or the like.

Here, the m X-directional wires 102, the n Y-directional wires 103, the connection 105, and the opposing element electrodes may have some or all of the same constituent elements. Further, they may be different from each other, and are appropriately selected from the above-described materials of the device electrodes and the like. The wires to these device electrodes may be collectively referred to as device electrodes when the material is the same as the device electrodes. The electron-emitting device 104 is provided on the substrate 1
Alternatively, it may be formed on an interlayer insulating layer (not shown).

As will be described later in detail, the X-direction wiring 102 has electron-emitting devices 104 arranged in the X-direction.
A scanning signal applying unit (not shown) for applying a scanning signal is electrically connected to scan the row according to the input signal.

On the other hand, a modulation signal generating means (not shown) for applying a modulation signal in order to modulate each column of the electron emission elements 104 arranged in the Y direction according to an input signal is provided on the Y direction wiring 103. Are electrically connected. Further, the drive voltage applied to each electron-emitting device 104 is supplied as a difference voltage between a scanning signal and a modulation signal applied to the electron-emitting device 104.

Next, an example of the image forming apparatus of the present invention using the electron source of the present invention having the simple matrix arrangement as described above will be described with reference to FIGS. 8 is a diagram showing the basic configuration of the display panel 201, FIG. 9 is a diagram showing the fluorescent film 114, and FIG. 10 is a diagram showing the display panel 201 of FIG.
FIG. 2 is a block diagram illustrating an example of a driving circuit for performing television display in accordance with a TSC television signal.

In FIG. 8, reference numeral 1 denotes a substrate of an electron source on which the surface conduction electron-emitting devices are arranged as described above, 111 denotes a rear plate to which the substrate 1 is fixed, and 116 denotes a glass substrate.
13 is a face plate in which a fluorescent film 114 and a metal back 115 are formed on the inner surface. Reference numeral 112 denotes a support frame, and frit glass or the like is applied to the rear plate 111, the support frame 112, and the face plate 116, and is applied in the air or in nitrogen. Then, the envelope 118 is formed by baking at 400 to 500 ° C. for 10 minutes or more for sealing.

In FIG. 8, reference numeral 2 corresponds to the electron-emitting portion in FIG. 102 and 103 are electron-emitting devices 104
X-direction wiring connected to the pair of device electrodes 4 and 5 and Y
In the direction wirings, respectively external terminals D _x1 to D _xm, and a D _y1 to D _yn.

The envelope 118 includes the face-plate 116, the support frame 112, and the rear plate 111, as described above. However, the rear plate 111 is provided mainly for the purpose of reinforcing the strength of the substrate 1. If the substrate 1 itself has sufficient strength, the separate rear plate 111 is unnecessary, and the support frame is directly attached to the substrate 1. Seal 112,
The envelope 118 may be constituted by the face plate 116, the support frame 112, and the substrate 1. Further, by further providing a support (not shown) called a spacer between the face plate 116 and the rear plate 111, the envelope 118 having sufficient strength against atmospheric pressure can be obtained.

The fluorescent film 114 is composed of only the phosphor 122 in the case of monochrome, but in the case of the color fluorescent film 114, depending on the arrangement of the phosphor 122, a black stripe (FIG. 9A) or a black matrix (FIG. 9A) is used. 9
(B)) a black conductive material 121 and a phosphor 122 called
It is composed of The purpose of providing the black stripes and the black matrix is to make the mixed portions between the phosphors 122 of the three primary colors necessary for color display black so that mixed colors and the like are not noticeable, and to reflect external light on the fluorescent film 114. Is to suppress a decrease in contrast due to As a material of the black conductive material 121, not only a material mainly containing graphite, which is often used, but also a material having conductivity and low light transmission and reflection may be used. it can.

As a method of applying the phosphor 122 to the glass substrate 113, a precipitation method or a printing method is used regardless of monochrome or color.

Further, as shown in FIG.
A metal back 115 is usually provided on the inner surface side of 4.
The purpose of the metal back 115 is to improve the brightness by mirror-reflecting light toward the inner surface side of the light emitted from the phosphor 122 (see FIG. 9) toward the glass substrate 113, and to apply an electron beam acceleration voltage. Acting as an electrode,
For example, protection of the phosphor 122 from damage due to collision of negative ions generated in the envelope 118 is performed. Metal back 1
15 can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film 114 after the fluorescent film 114 is manufactured, and then depositing Al by vacuum evaporation or the like.

The face plate 116 may be provided with a transparent electrode (not shown) on the outer surface of the fluorescent film 114 in order to further enhance the conductivity of the fluorescent film 114.

At the time of performing the above-mentioned sealing, in the case of color, since the phosphors 122 of each color must correspond to the electron-emitting devices 104, it is necessary to perform sufficient alignment.

The inside of the envelope 118 is evacuated to a degree of vacuum of about 1 × 10 ⁻⁷ torr through an exhaust pipe (not shown) and sealed. Also, a getter process may be performed immediately before or after sealing the envelope 118. This is a process of heating a getter (not shown) arranged at a predetermined position in the envelope 118 to form a deposited film. The getter is usually composed mainly of Ba or the like, and is used to maintain a degree of vacuum of, for example, 1 × 10 ⁻⁵ to 1 × 10 ⁻⁷ torr by the adsorption action of the deposited film.

The above-described forming and subsequent manufacturing steps of the electron-emitting device are usually performed immediately before or after sealing of the envelope 118, and the contents thereof are as described above.

The display panel 201 described above is, for example, shown in FIG.
Can be driven by a driving circuit as shown in FIG.
In FIG. 10, 201 is a display panel, 202 is a scanning circuit, 203 is a control circuit, 204 is a shift register,
205 is a line memory, 206 is a synchronization signal separation circuit, 2
07 the modulation signal generator, V _x and V _a are DC voltage sources.

As shown in FIG. 10, the display panel 20
1 is connected to an external electric circuit through the external terminals D _x1 to D _xm, external terminals D _y1 to D _yn and a high-voltage terminal Hv.
Of these, the external terminals D _{x1 to} D _xm are connected to the display panel 201.
A scanning signal is applied to sequentially drive the electron-emitting devices provided therein, that is, electron-emitting device groups arranged in a matrix of m rows and n columns, one row at a time (n devices).

On the other hand, to the external terminals D _{y1 to} D _yn , a modulation signal for controlling the output electron beam of each electron-emitting device in one row selected by the scanning signal is applied. Also,
The high-voltage terminal Hv, the DC voltage source V _a, for example, 10k
V DC voltage is supplied. This is an accelerating voltage for applying sufficient energy to the electron beam output from the electron-emitting device to excite the phosphor.

The scanning circuit 202 includes m switching elements (schematically indicated by S _{1 to} S _m in FIG. 10). Each of the switching elements S _{1 to} S _m includes a DC voltage power supply V _x. , Or 0 V (ground level), and is electrically connected to the external terminals D _{x1 to} D _{xm of} the display panel 201. Each of the switching elements S _{1 to} S _m operates based on a control signal T _scan output from the control circuit 203, and is actually easily configured by combining elements having a switching function such as an FET, for example. It is possible.

[0086] The DC voltage source V _x in this example, based on said characteristics of the surface conduction electron-emitting device (the threshold voltage), scanned non electron-emitting devices of the driving voltage applied thereto threshold voltage It is set to output a constant voltage as follows.

The control circuit 203 has a function of coordinating the operation of each unit so that an appropriate display is performed based on an image signal input from the outside. Based on the synchronization signal T _sync next fed from the synchronizing signal separation circuit 206 to be described, T _scan, generating a respective control signal T _sft and T _mry to each unit.

The synchronizing signal separating circuit 206 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside. As is well known, a frequency separating (filter) is used. With the circuit,
It can be easily configured. Sync signal separation circuit 206
The sync signal separated by is composed of a vertical sync signal and a horizontal sync signal, as is well known. here,
It is illustrated as T _sync for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as DAT for convenience.
This is shown as an A signal. This DATA signal is input to the shift register 204.

The shift register 204 is for serially / parallel-converting the DATA signal serially input in time series for each line of an image, and is based on a control signal _Tsft sent from the control circuit 203. Work. This control signal _Tsft may be rephrased as a shift clock of the shift register 204. The data of one line of the serial-parallel-converted image (corresponding to the drive data of n electron-emitting devices) is represented by I
Examples n parallel signals _d1 ~I _dn shift register 2
04.

The line memory 205 is a storage device for storing data of one line of an image for a required time.
Stores the contents of the appropriate I _d1 ~I _dn according to the control signal T _mry sent from the control circuit 203. The stored content is I
It is output as _d'1 ~I _d'n, is input to the modulation signal generator 207.

The modulation signal generator 207 is a signal source for appropriately driving and modulating each of the electron-emitting devices in accordance with each of the image data I _{d′ 1 to} I _{d′ n} .
The voltage is applied to the electron-emitting devices in the display panel 201 through the terminals D _{y1 to} D _yn .

As described above, the electron-emitting device has a distinct threshold voltage for electron emission, and electron emission occurs only when a voltage exceeding the threshold voltage is applied. For a voltage exceeding the threshold voltage, the emission current also changes in accordance with the change in the voltage applied to the electron-emitting device.
By changing the material, configuration, and manufacturing method of the electron-emitting device, the value of the threshold voltage or the degree of change of the emission current with respect to the applied voltage may change, but in any case, the following can be said.

That is, when a pulse-like voltage is applied to the electron-emitting device, for example, when a voltage lower than the threshold voltage is applied, no electron emission occurs, but when a voltage exceeding the threshold voltage is applied. Causes electron emission. At that time, first, it is possible to control the intensity of the output electron beam by changing the peak value of the voltage pulse. Second
By changing the width of the voltage pulse, it is possible to control the total amount of charges of the output electron beam.

Accordingly, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method and a pulse width modulation method. In the case of performing the voltage modulation method, the modulation signal generator 207 generates a voltage pulse having a fixed length, and uses a voltage modulation circuit capable of appropriately modulating the pulse peak value according to input data. In the case of performing the pulse width modulation method, the modulation signal generator 207 generates a voltage pulse having a constant peak value, but a pulse width modulation method circuit capable of appropriately modulating the pulse width according to input data. Used.

The shift register 204 and the line memory 20
Reference numeral 5 may be a digital signal type or an analog signal type, as long as it can perform serial / parallel conversion and storage of an image signal at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the synchronization signal separation circuit 206 into a digital signal. This can be achieved by providing an A / D converter at the output of the synchronization signal separation circuit 206.

In connection with this, the line memory 20
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit provided in modulation signal generator 207 is slightly different.

That is, in the case of a voltage modulation method using a digital signal, a well-known D / A conversion circuit may be used as the modulation signal generator 207, and an amplification circuit or the like may be added as necessary. In the case of a pulse width modulation method using a digital signal, the modulation signal generator 207 includes, for example, a high-speed oscillator, a counter (counter) for counting the number of waves output from the oscillator, and an output value of the counter and an output value of the memory. It can be easily configured by using a circuit in which comparators for comparison are combined. Further, if necessary, an amplifier for amplifying the pulse width modulated signal output from the comparator to the drive voltage of the electron-emitting device may be added.

On the other hand, in the case of the voltage modulation method using an analog signal, for example, an amplification circuit using a well-known operational amplifier or the like may be used as the modulation signal generator 207, and a level shift circuit or the like may be added if necessary. You may. In the case of a pulse width modulation method using an analog signal, for example, a well-known voltage controlled oscillator (VCO) may be used. If necessary, an amplifier for amplifying the voltage up to the driving voltage of the electron-emitting device may be used. May be added.

The image forming apparatus of the present invention having the display panel 201 and the driving circuit as described above can apply the voltage from the terminals D _{x1 to} D _xm and D _{y1 to} D _yn to change the necessary electron emission elements from the electron emission elements. Is excited by applying a high voltage to the metal back 115 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and causing the accelerated electron beam to collide with the fluorescent film 114. -By light emission, television display can be performed according to an NTSC television signal.

The configuration described above is a schematic configuration necessary for obtaining the image forming apparatus of the present invention used for display and the like, and detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image forming apparatus. Although the NTSC system has been described as an input signal, the image forming apparatus according to the present invention is not limited to this, and may employ another system such as a PAL or SECAM system. For example, a high-definition TV system such as a MUSE system may be used.

Next, an example of the above-described trapezoidal electron source and an image forming apparatus of the present invention using the same will be described with reference to FIGS.

[0103] In FIG. 11, 1 denotes a substrate, 104 is a surface conduction electron-emitting device, 304 are provided ten in common wiring connecting the electron-emitting devices 104, each have an external terminal D ₁ to D ₁₀ ing.

A plurality of electron-emitting devices 104 are arranged on the substrate 1 in parallel. This is called an element row. These element rows are arranged in a plurality of rows to constitute an electron source.

By applying an appropriate drive voltage between the common wiring 304 of each element row (for example, the common wiring 304 of the external terminals D ₁ and D ₂ ), each element row can be driven independently. That is, a voltage exceeding the threshold voltage may be applied to an element row where electron beams are to be emitted, and a voltage lower than the threshold voltage may be applied to an element row where electron beams are not desired to be emitted. Application of the driving voltage, the common wiring D ₂ to D ₉ located at each element rows, the external terminals D ₂ and D ₃ adjacent common wiring 304, i.e. each phase adjacent each phase, D ₄ and D ₅ it can also be performed as an integrated same wire common wiring 304 of D ₆ and D _7, D ₈ and D _9.

FIG. 12 is a view showing the structure of a display panel 301 provided with the above-mentioned trapezoidal arrangement of electron sources, which is another example of the electron source of the present invention.

In FIG. 12, reference numeral 302 denotes a grid electrode; 303, an opening through which electrons pass; D _{1 to} D _m , external terminals for applying a voltage to each electron-emitting device; and G _{1 to} G _n , grid electrodes 302 External terminal connected to the Further, the common wiring 304 between each element row is formed on the substrate 1 as an integral same wiring.

In FIG. 12, the same reference numerals as in FIG. 8 denote the same members, and the major difference between the display panel 201 using the electron sources in the simple matrix arrangement shown in FIG. The point is that a grid electrode 302 is provided between the electrodes 116.

The grid electrode 302 is provided between the substrate 1 and the face plate 116 as described above. The grid electrode 302 is capable of modulating the electron beam emitted from the electron-emitting device 104. The grid electrode 302 allows the electron beam to pass through a stripe-shaped electrode provided perpendicular to the ladder-shaped element row. In addition, one circular opening 303 is provided for each electron-emitting device 104.

The shape and arrangement position of the grid electrode 302
12, the openings 303 may be provided in a large number in a mesh shape, and the grid electrode 302 may be provided around or near the electron-emitting device 104, for example.

The external terminals D _{1 to} D _m and G _{1 to} G _n are connected to a drive circuit (not shown). Then, by applying a modulation signal for one image line to the column of the grid electrode 302 in synchronization with sequentially driving (scanning) the element rows one by one, each electron beam is irradiated on the fluorescent film 114. And images can be displayed line by line.

As described above, the image forming apparatus of the present invention
It can be obtained by using any of the electron sources of the present invention in a simple matrix arrangement or a trapezoidal arrangement, and is suitable not only for the above-described television broadcast display device, but also as a video conference system and a display device such as a computer. A device is obtained. Furthermore, the present invention can be used as an exposure device of an optical printer including a photosensitive drum.

[0113]

EXAMPLES Hereinafter, the present invention will be specifically described with reference to Examples, but the present invention is not limited to these Examples.
The present invention also encompasses a case in which each element is replaced or a design is changed within a range in which the object of the present invention is achieved.

Example 1 As a first example of the present invention,
The planar surface-conduction electron-emitting device shown in FIG. 1 was manufactured according to the manufacturing process shown in FIG. This will be described in detail below.

1) A sufficiently cleaned blue plate glass was used as the substrate 1, and a 50 ° -thick Ti, 1
000 Ｎｉ Ni was sequentially deposited. Patterning is performed by photolithography, and the element electrode interval L is 3 μm.
The device electrodes 4 and 5 having a length m and a length W of 300 μm were formed (FIG. 3A).

2) Organic Pd complex (manufactured by Okuno Pharmaceutical Co., Ltd .;
ccp4230) with a spinner and spin-coated.
A heat baking treatment was performed at 0 ° C. for 10 minutes, and the conductive thin film 3 was patterned by a photolithography method (FIG. 3).
(B)).

3) The unformed element is placed in the measurement and evaluation apparatus shown in FIG. 5 and evacuated to a degree of vacuum of 2 × 10 ⁻⁵ torr by a vacuum pump (not shown _).
A voltage was applied to the device electrodes 4 and 5 from a power supply 51 for applying a voltage, and an energization process (forming process) was performed to form the electron-emitting portion 2 (FIG. 3C). The voltage waveform at that time at increasing type as shown in FIG. 4 (b), in this embodiment T ₁
The 1 msec, the T ₂ and 10 msec, a rectangular wave used in place of the triangular wave shown in figure, is pressurized by 0.1V increments. During the forming process also inserts a pulse voltage of 0.1V as a resistance measuring pulse within the period of T _2, measured at the same time resistance forming process, measured value is completed the forming process when showed 1 M.OMEGA.

4) La was deposited by MOCVD on the cathode side of the electron-emitting portion 2 formed in the above step. Trisdipivaloylmethanatrantan (L
a (C ₁₁ H ₁₉ O ₂ ) ₃ ) as a gas source and a substrate temperature of 1
At 50 ° C., a triangular wave pulse (peak value 16
V, a pulse width of 1 msec, and a pulse interval of 10 msec), and the gas was flowed while a unipolar electric field was applied. At the same time, the pressure of the chamber (film formation chamber) is increased from 0.1 mtorr to several tens mt.
It was controlled in the range of orr. Maintain under these conditions for 30 minutes,
La was deposited only on one side of the electron-emitting portion 2 to form the second layer 6. The film thickness was about 700 ° (FIG.
(D)).

5) The electron emission characteristics of the manufactured electron-emitting device were measured using the measuring device shown in FIG. The measuring method is such that the element electrode 4 on the side having the second layer 6 is the cathode side,
When the distance H between the anode electrode 54 and the device is 4 mm, the anode voltage is 1 kV, and the device voltage is 16 V, the emission current I _e of the electron-emitting device, the device current _If , the electron emission efficiency I _e /
_If was measured. Table 1 shows the results.

[Example 2] In the step of forming the second layer 6 of Example 1, the first layer made of Sc was formed by using trispivaloylmethanatoscandium (Sc (C ₁₁ H ₁₉ O ₂ ) ₃ ) as a volatile compound. A surface conduction electron-emitting device was manufactured in the same manner as in Example 1 except that the two layers 6 were formed. Table 1 shows the electron emission characteristics.

[Examples 3 and 4] In Example 1, trisdipivaloylmethanatostrontium (Sr (C ₁₁ H
₁₉ O ₂ ) ₃ ) and trisdipivaloylmethanatobarium (Ba (C ₁₁ H ₁₉ O ₂ ) ₃ ) were used to form the second layers composed of Sr and Ba in the same manner as in Example 1. The surface conduction electron-emitting devices of Examples 3 and 4 were produced.
The characteristics are shown in Table 1.

Comparative Example A surface conduction electron-emitting device was formed in the same manner as in Example 1 except that the second layer was not formed, and emission characteristics were measured. Table 1 shows the results.

[0123]

[Table 1]

[Examples 5 to 8] Using the electron-emitting devices of Examples 1 to 4, following the manufacturing steps shown in FIGS.
The electron source of the simple matrix shown in FIG. 7 was manufactured. FIG. 13 is a plan view of a part of the electron source. Also, AA ′ in FIG.
A cross-sectional view is shown in FIG. 13 to 16 indicate the same components. Here, 141 is an interlayer insulating layer, and 142 is a contact hole.

Step-a The cleaned blue plate glass was used as the substrate 1 and the surface of the substrate was vacuum-deposited with 50 mm thick Cr and 6000 mm thick Au.
Are sequentially laminated and patterned by photolithography to form a lower wiring 102 having a desired shape.
(A)).

Step-b Next, an interlayer insulating layer 141 made of a silicon oxide film having a thickness of 1.0 μm was deposited by RF sputtering (FIG. 15).
(B)).

Step-c A photoresist pattern for forming the contact hole 142 was formed in the silicon oxide film deposited in the step-b, and the interlayer insulating layer 141 was etched using the photoresist pattern as a mask to form the contact hole 142 (FIG. Fifteen
(C)).

Step-d Ti of 50 ° thickness and 1000 ° thickness by vacuum evaporation.
Are sequentially deposited and patterned by photolithography to form an element electrode having an element electrode gap L of 3 μm and an element electrode length W of 300 μm (FIG. 15).
(D)).

Step-e After a photoresist pattern of the upper wiring 103 is formed on the device electrodes 4 and 5, Ti having a thickness of 50 ° and a thickness of 5000 are formed.
Au was sequentially deposited by vacuum evaporation, and unnecessary portions were removed by lift-off to form an upper wiring 103 having a desired shape (FIG. 16E).

Step-f Next, an electron-emitting device was prepared and an electron source was prepared in the same manner as in Steps 2) to 4) of Examples 1 to 4.

After fixing the unformed electron source substrate 1 produced in the above steps to the rear plate 111, the electron source 1
5 mm above, a face plate 116 (having a fluorescent film 114 and a metal back 116 formed on the inner surface of a glass substrate 113) is sufficiently aligned via a support frame 112 and arranged. Frame 11
2. A frit glass was applied to the joint of the rear plate 111 and sealed by baking at 400 ° C. to 500 ° C. in the air for 10 minutes or more. The fixing of the electron source substrate 1 to the rear plate 111 was also performed using frit glass.

In this embodiment, the phosphor has a stripe shape (see FIG. 9A), and the black stripe is made of a material mainly composed of graphite.
A slurry method was used as a method of applying the phosphor to No. 3.

The metal back 115 provided on the inner surface side of the fluorescent film 114 is subjected to a smoothing process (filming) on the inner surface of the fluorescent film after the fluorescent film is formed.
1 was produced by vacuum evaporation. Face plate 1
In 16, in order to further increase the conductivity of the fluorescent film 114, a transparent electrode may be provided on the outer surface side of the fluorescent film 114. However, in this embodiment, since the metal back 115 alone provided sufficient conductivity, Omitted.

The gas was evacuated to a degree of vacuum of about 1 × 10 ^−6.5 torr, and an exhaust pipe (not shown) was fused by heating with a gas burner, and the envelope 118 was sealed.

Finally, in order to maintain the degree of vacuum after sealing, gettering was performed by a high-frequency heating method.

The outer terminals D _{x1 to} D _xm to D _{y1 to} D _yn and the high voltage terminal H of the display panel manufactured as described above.
v were connected to necessary drive systems, respectively, to complete the image forming apparatus. External terminals D _{x1 to} D _xm to D _y1 to
Electrons are emitted by applying a scanning signal and a modulation signal through signal generation means (not shown) through D _yn , respectively, and several k are applied to the metal back 115 through the high voltage terminal Hv.
A high voltage of V or more is applied to accelerate the electron beam, and the fluorescent film 1
14 and the image was displayed by exciting and emitting light. In the image forming apparatus of this embodiment, a display image having high display stability and good image quality was obtained.

[Embodiment 9] FIG. 17 shows a display device in which the image forming apparatuses of Embodiments 5 to 8 are configured to be able to display image information provided from various image information sources such as television broadcasting. It is a figure for showing an example of. In the figure, 280 is a display panel, 261 is a display panel driving circuit, 262 is a display controller, 263 is a multiplexer, 264 is a decoder, 26
5 is an input / output interface circuit, 266 is a CPU, 2
67 is an image generation circuit, 268, 269 and 270 are image memory interface circuits, 271 is an image input interface circuit, 272 and 273 are TV signal receiving circuits, and 274 is an input unit. When the present display device receives a signal containing both video information and audio information, such as a television signal, it naturally reproduces the audio simultaneously with the display of the video. Descriptions of circuits, speakers, and the like related to reception, separation, reproduction, processing, storage, and the like of audio information that are not directly related to the above are omitted.

Hereinafter, each part will be described along the flow of the image signal.

First, the TV signal receiving circuit 273 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The format of the received TV signal is not particularly limited, and may be, for example, various systems such as the NTSC system, the PAL system, and the SECAM system. Further, a TV signal (for example, a so-called high-definition TV including the MUSE system) composed of a larger number of scanning lines than the above is suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. Signal source. TV received by the TV signal receiving circuit 273
The signal is output to the decoder 264.

The image TV signal receiving circuit 272 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. As with the TV signal receiving circuit 273, the type of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 264.

The image input interface circuit 27
Reference numeral 1 denotes a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner. The captured image signal is output to a decoder 264.

The image memory interface circuit 2
70 is a video tape recorder (hereinafter abbreviated as VTR)
Is a circuit for receiving the image signal stored in the decoder 264. The captured image signal is output to the decoder 264.

The image memory interface circuit 2
Reference numeral 69 denotes a circuit for capturing an image signal stored in the video disk. The captured image signal is output to the decoder 264.

An image memory-interface circuit 268 is a circuit for taking in an image signal from a device storing still image data, such as a so-called still image disk.
4 is output.

The input / output interface circuit 265
Is a circuit for connecting the present display device to an output device such as an external computer, a computer network, or a printer. In addition to inputting and outputting image data and character / graphic information, control signals and numerical data can be input and output between the CPU 266 of the display device and the outside in some cases.

The image generation circuit 267 is provided with image data and character / graphic information input from the outside via the input / output interface circuit 265, or the CPU 266.
This is a circuit for generating display image data based on the image data and character / graphic information output from the display unit. Inside this circuit, for example, a rewritable memory for storing image data and character / graphic information, a read-only memory storing an image pattern corresponding to a character code,
A circuit necessary for generating an image such as a processor for performing image processing is incorporated therein.

The display image data generated by this circuit is output to the decoder 264, but may be output to an external computer network or printer via the input / output interface circuit 265 in some cases.

The CPU 266 mainly performs operations related to operation control of the display device and generation, selection, and editing of a display image.

For example, a control signal is output to the multiplexer 263, and image signals to be displayed on the display panel 280 are appropriately selected or combined. At that time, a control signal is generated for the display panel controller 262 in accordance with the image signal to be displayed, and the display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines on one screen, and the like are displayed. The operation of the device is appropriately controlled.

Further, image data and character / graphic information are directly output to the image generation circuit 267, or an external computer or memory is accessed via the input / output interface circuit 265 to access the image data or character / graphic information.
Enter graphic information.

The CPU 266 may, of course, be involved in operations for other purposes. For example, like a personal computer or word processor,
It may be directly related to the function of generating and processing information.

Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 265 and work such as numerical calculation may be performed in cooperation with an external device.

The input section 274 is connected to the CPU 266.
The user inputs commands, programs, data, or the like, and various input devices such as a joystick, a barcode reader, and a voice recognition device can be used, for example, in addition to a keyboard and a mouse.

The decoder 264 converts the various image signals input from the above 267 to 273 into three primary color signals,
Alternatively, it is a circuit for inversely converting a luminance signal into an I signal and a Q signal. As shown by a dotted line in FIG.
64 preferably has an image memory inside. This is for handling television signals that require an image memory when performing inverse conversion, such as the MUSE method. Further, the provision of the image memory facilitates the display of a still image, or the image generation circuit 26
7 and the CPU 266 in cooperation with the image processing, such as image thinning, interpolation, enlargement, reduction, and synthesis, and the advantage that editing can be easily performed.

The multiplexer 263 is connected to the CPU
A display image is appropriately selected based on a control signal input from the 266. That is, the multiplexer 263 selects a desired image signal from the inversely converted image signals input from the decoder 264 and outputs the selected image signal to the drive circuit 261. In that case, by switching and selecting an image signal within one screen display time, it is also possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen TV. .

The display panel controller 2
Reference numeral 62 denotes a circuit for controlling the operation of the drive circuit 261 based on the control signal input from the CPU 266.

First, for example, a signal for controlling an operation sequence of a drive power source (not shown) for the display panel is output to the drive circuit 261 as one related to the basic operation of the display panel.

Further, as a signal relating to the display panel driving method, a signal for controlling, for example, a screen display frequency and a scanning method (for example, interlace or non-interlace) is output to the drive circuit 261.

In some cases, a control signal relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 261.

The drive circuit 261 is a circuit for generating a drive signal to be applied to the display panel 280. The drive circuit 261 converts the image signal input from the multiplexer 263 and the control signal input from the display panel controller 262. It operates on the basis of:

The function of each part has been described above. With the configuration illustrated in FIG. 17, in this display device, image information input from various image information sources is displayed on the display panel 2.
70 can be displayed. That is, various image signals including television broadcasts are inversely converted by the decoder 264, appropriately selected by the multiplexer 263, and input to the drive circuit 261. On the other hand, the display controller 262 generates a control signal for controlling the operation of the drive circuit 261 according to the image signal to be displayed. The drive circuit 261 applies a drive signal to the display panel 280 based on the image signal and the control signal. Thus, an image is displayed on display panel 280. These series of operations are performed by the CPU 2
66 is controlled collectively.

In the present display device, an image memory built in the decoder 264 and an image generation circuit 267 are provided.
And the involvement of the CPU 266 not only displays the selected one of the plurality of pieces of image information but also displays, for example, enlargement, reduction, rotation, movement, edge emphasis, thinning, interpolation, It is also possible to perform image processing such as color conversion and image aspect ratio conversion, and image editing such as combining, erasing, connecting, exchanging, and fitting. In the description of the present embodiment,
Although not particularly mentioned, a dedicated circuit for processing and editing audio information may be provided as in the above-described image processing and image editing.

Accordingly, the present display device is a television broadcast display device, a video conference terminal device, an image editing device that handles still and moving images, a computer terminal device, an office terminal device including a word processor, a game terminal device, and the like. It is possible to combine the functions of a single machine, etc., and has a very wide range of applications for industrial or consumer use.

FIG. 17 shows only an example of the image forming apparatus of the present invention, and it goes without saying that the present invention is not limited to this. For example, among the components shown in FIG. 17, circuits relating to functions that are not necessary for the purpose of use may be omitted. Conversely, additional components may be added depending on the purpose of use. For example, when the present display device is applied to a videophone, it is preferable to add a transmission / reception circuit including a television camera, an audio microphone, an illuminator, and a modem to the components.

In the present display device, in particular, it is easy to reduce the thickness of a display panel using a surface conduction electron-emitting device as an electron source, so that the depth of the display device can be reduced. In addition, display panels that use surface-conduction electron-emitting devices as electron sources are easy to enlarge and have high brightness and excellent viewing angle characteristics. It is possible to display well.

Further, since the electron source of the present invention has uniform electron emission characteristics among the surface conduction electron-emitting devices, the quality of the formed image is high and a high-definition image can be displayed. .

[0167]

As described above, according to the present invention, a high-luminance electron-emitting device can be obtained, and a high-luminance image forming apparatus can be constructed. That is, image display with high display quality is realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a surface conduction electron-emitting device of the present invention.

FIG. 2 is a sectional view showing another embodiment of the surface conduction electron-emitting device of the present invention.

FIG. 3 is a diagram showing an example of a manufacturing process of the surface conduction electron-emitting device of the present invention.

FIG. 4 is a diagram showing a voltage waveform of an energization process for manufacturing the surface conduction electron-emitting device of the present invention.

FIG. 5 is a diagram showing a measurement evaluation system for evaluating the electron emission characteristics of the surface conduction electron-emitting device of the present invention.

FIG. 6 is a view showing electron emission characteristics of the surface conduction electron-emitting device of the present invention.

FIG. 7 is a schematic diagram of a simple matrix electron source of the present invention.

FIG. 8 is a diagram showing one embodiment of a display panel of the image forming apparatus of the present invention.

FIG. 9 is a diagram showing a fluorescent film used in the image forming apparatus of the present invention.

FIG. 10 is a block diagram of an embodiment of the image forming apparatus of the present invention.

FIG. 11 is a schematic view of a ladder-type electron source according to the present invention.

FIG. 12 is a diagram showing a display panel of the image forming apparatus of the present invention using a ladder-type electron source.

FIG. 13 is a diagram illustrating an electron source used in the image forming apparatuses according to Examples 5 to 8 of the present invention.

FIG. 14 is a partial sectional view of an electron source according to Examples 5 to 8 of the present invention.

FIG. 15 is a manufacturing process diagram of the electron sources according to Examples 5 to 8.

FIG. 16 is a manufacturing process diagram of the electron sources according to Examples 5 to 8.

FIG. 17 is a block diagram illustrating an image forming apparatus according to a ninth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electron emission part 3 Conductive thin film 4, 5 Element electrode 6 Second layer 21 Step forming member 50 Ammeter 51 Power supply 52 Ammeter 53 High voltage power supply 54 Anode electrode 55 Vacuum device 56 Exhaust pump 102 X direction wiring 103 Y direction wiring 104 Surface conduction electron-emitting device 105 Connection 111 Rear plate 112 Support frame 113 Glass substrate 114 Fluorescent film 115 Metal back 116 Face plate 118 Envelope 121 Black conductive material 122 Phosphor 141 Interlayer insulating layer 142 Contact hole 161 Cr film 201 display panel 202 scanning circuit 203 control circuit 204 shift register 205 line memory 206 synchronization signal separation circuit 207 modulation signal generator 261 drive circuit 262 display panel controller 263 multiplexer 264 Decoder 265 Input / output interface 266 CPU 267 Image generation circuit 268 Image memory interface 269 Image memory interface 270 Image memory interface 271 Image input memory interface 272 TV signal reception circuit 273 TV signal reception circuit 274 Input unit 280 Display panel 301 Display panel 302 Grid electrode 303 opening 304 common wiring 401 display panel

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01J 1/30 H01J 9/02 H01J 31/12

Claims (11)

(57) [Claims] 1. A method according to claim 1, further comprising: forming a pair of device electrodes and a conductive thin film for connecting the device electrodes on the insulating substrate; forming an electron emission portion on the conductive thin film; In the presence of an organometallic gas containing, a voltage is applied between the device electrodes, and a layer containing an alkaline earth metal or a rare earth element is laminated on the cathode side of the electron emitting portion. Production method. 2. A surface conduction electron-emitting device manufactured by the method according to claim 1 . 3. The surface conduction electron-emitting device according to claim 2, wherein the device electrode is a planar device formed on the same surface. 4. An insulator provided adjacent to one of the device electrodes.
The surface conduction electron-emitting device according to claim 2 , wherein the other device electrode is located on the edge layer, and a conductive thin film is formed on a side surface of the insulating layer to be a vertical device. 5. An electron emitting device according to claim 2 , wherein a plurality of electron emitting devices are arranged in parallel and connected, and at least one device line is formed, and wiring for driving each device is arranged in a ladder shape. An electron source characterized in that it has been made. 6. The semiconductor device according to claim 2 , wherein at least one or more element columns each including a plurality of the electron-emitting devices according to claim 2 are arranged, and wirings for driving the elements are arranged in a matrix. Characterized electron source. 7. An image forming apparatus comprising: the electron source according to claim 5; an image forming member; and a control electrode for controlling an electron beam emitted from each element according to an information signal. 8. An image forming apparatus comprising the electron source according to claim 6 and an image forming member. 9. A method of manufacturing an electron source according to claim 1 , wherein a plurality of surface conduction electron-emitting devices are formed on the same substrate. 10. A control electrode for controlling an electron beam emitted from the electron source obtained by the manufacturing method according to claim 9, and an image for forming an image by irradiating the electron beam from the electron source. A method for manufacturing an image forming apparatus, wherein the method is combined with a forming member. 11. A method for manufacturing an image forming apparatus, comprising: combining the electron source obtained by the manufacturing method according to claim 9 with an image forming member that forms an image by irradiating an electron beam from the electron source.