JP2910448B2 - Infrared sensor - Google Patents
Infrared sensorInfo
- Publication number
- JP2910448B2 JP2910448B2 JP4265688A JP26568892A JP2910448B2 JP 2910448 B2 JP2910448 B2 JP 2910448B2 JP 4265688 A JP4265688 A JP 4265688A JP 26568892 A JP26568892 A JP 26568892A JP 2910448 B2 JP2910448 B2 JP 2910448B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor
- silicon substrate
- infrared sensor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007937 eating Effects 0.000 description 1
- 235000005686 eating Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、赤外線センサに関し、
特に半導体基板をエッチングして得られるダイアフラム
構造を有する赤外線センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared sensor,
In particular, the present invention relates to an infrared sensor having a diaphragm structure obtained by etching a semiconductor substrate.
【０００２】[0002]
【従来の技術】従来、この種の赤外線センサは、金属又
は半導体又は金属と半導体の両方のパターンを支持し、
かつ、エッチング液に対し耐腐蝕性を持ち、ストッパー
として働く窒化膜及び窒化膜を補強する強度の強い酸化
膜を多層にした絶縁性の薄膜と、前記薄膜上にある赤外
線吸収率の高い吸収層と、前記薄膜を支持しているシリ
コン基板から成るダイアフラム構造を有し、前記ダイア
フラム構造は、パターンがある側、或いは、基板裏側か
らシリコン基板をエッチングしできた構造となってい
た。（例えば、センサ技術１９８６年７月号Ｖｏｌ．
６，Ｎｏ８）『サーモパイル』Ｐ６６〜６８，Ｐｒｏｃ
ｅｅｄｉｎｇｓ ｏｆ ｔｈｅ １３ｔｈ Ｃｏｎｆｅ
ｒｅｎｃｅ ｏｎ Ｓｏｌｉｄ Ｓｔａｔｅ Ｄｅｖｉ
ｃｅｓ，Ｔｏｋｙｏ． １９８１ Ｊａｐａｎｅｓｅ
Ｊｏｕｒｎａｌ ｏｆ ＡｐｐｌｉｅｄＰｈｙｓｉｃ
ｓ， Ｖｏｌ．２１（１９８２） Ｓｕｐｐｌｅｍｅｎ
ｔ ２１−１， ｐｐ２２５−２ “Ｐｙｒｏｅｌｅｃ
ｔｒｉｃ Ｉｎｆｒａｒｅｄ Ｓｅｎｓｏｒ Ｕｓｉｎ
ｇ ＰｂＴｉＯ3 Ｔｈｉｎ Ｆｉｌｍ”）又は、シリ
コン基板上の絶縁膜上に形成した犠牲層をエッチングし
てできた構造となっていた。（例えば電気学会研究会資
料電子デバイス・センサ技術合同研究会ＥＤＤ−８８−
６７ ＳＴ−８８−１０ 『３２×３２圧力センサアレ
イ』（１９８８年１０月）Ｐ１７〜２６） 図２（ａ），（ｂ）は従来のダイアフラム構造を有する
赤外線センサの、それぞれ上面図と断面図である。半導
体と金属パターン４を支持し、エッチング液に対し耐腐
蝕性を持ち、ストッパーとして働くシリコン窒化膜の薄
膜７と、本デバイス表面にある赤外線吸収率が高い吸収
層６と、この吸収層６と前記パターン４とを絶縁する絶
縁膜８と、以上述べた前４層から成る薄膜を支持するシ
リコン基板１，及びエッチングされて空洞となる犠牲層
３から成る。吸収層は、例えば金黒（ゴールドブラッ
ク）の膜を用いる。前記半導体と金属のパターン４は、
サーモパイルを為しており、熱電能の異なる２種類の熱
電材料１０，１１を接点部５を介し、交互に接続したも
のである。図２では、２種類の熱電材料１０，１１は、
それぞれＰ型ポリシリコン膜とｎ型ポリシリコン膜であ
り、各１本ずつで１対に熱電対を為す合計１２対の熱電
対を直列に接続している。Ｐ型ポリシリコン１０とｎ型
ポリシリコン１１の間は金属５で接続している。又、１
対の熱電対の両端は、一方を前記薄膜中で犠牲層上部に
ある部分に、もう一方を犠牲層のない部分に配置してあ
る。シリコン基板１上の絶縁膜２と窒化膜に囲まれた空
洞３は、デバイスをエッチング液に浸して、薄膜表面に
穿けた孔９からエッチング液を浸透させ、犠牲層３をエ
ッチングして形成する。窒化膜７は前述のように前記エ
ッチングに対してストッパーとなる。図２の例では、赤
外線検知部である前記薄膜に、赤外線が入射した場合、
薄膜を透過した赤外線は、もはや薄膜の温度上昇には関
与しない。又、前記ダイアフラム構造が、シリコン基板
上の絶縁膜上に形成した犠牲層をエッチングしてできた
構造となっているので、薄膜を透過した赤外線は、ダイ
アフラムの支持と、ヒートシンクの作用を兼ねている前
記シリコン基板に吸収されるため、ヒートシンクの温度
が上昇し、赤外線センサの感度が悪くなるという欠点が
ある。2. Description of the Related Art Conventionally, this type of infrared sensor supports a metal or semiconductor or both metal and semiconductor patterns,
In addition, an insulating thin film having a multilayer structure of a nitride film acting as a stopper, which has corrosion resistance to an etchant, and a strong oxide film for reinforcing the nitride film, and an absorption layer having a high infrared absorptivity on the thin film And a diaphragm structure composed of a silicon substrate supporting the thin film, and the diaphragm structure has a structure in which the silicon substrate can be etched from the side where the pattern is located or from the back side of the substrate. (See, for example, Sensor Technology, July 1986, Vol.
6, No8) "Thermopile" P66-68, Proc
eatings of the 13th Confe
rence on Solid State Devi
ces, Tokyo. 1981 Japanese
Journal of Applied Physic
s, Vol. 21 (1982) Supplemen
t 21-1, pp225-2 "Pyroelec
tric Infrared Sensor Usin
g PbTiO 3 Thin Film ”) or a structure formed by etching a sacrificial layer formed on an insulating film on a silicon substrate. 88-
67 ST-88-10 “32 × 32 Pressure Sensor Array” (Oct. 1988, pp. 17 to 26) FIGS. 2A and 2B are a top view and a cross-sectional view of a conventional infrared sensor having a diaphragm structure. It is. A thin film 7 of a silicon nitride film which supports a semiconductor and a metal pattern 4 and has a corrosion resistance to an etching solution and serves as a stopper; an absorption layer 6 having a high infrared absorptance on the surface of the device; It comprises an insulating film 8 for insulating the pattern 4, a silicon substrate 1 for supporting the above-mentioned thin film composed of the preceding four layers, and a sacrificial layer 3 which becomes a cavity by being etched. The absorption layer uses, for example, a gold black film. The semiconductor and metal pattern 4 is
A thermopile is used, and two types of thermoelectric materials 10 and 11 having different thermoelectric powers are alternately connected via a contact portion 5. In FIG. 2, two types of thermoelectric materials 10 and 11 are:
A P-type polysilicon film and an N-type polysilicon film are respectively connected, and a total of 12 thermocouples each forming one thermocouple are connected in series. The metal 5 is connected between the P-type polysilicon 10 and the n-type polysilicon 11. Also, 1
Both ends of the pair of thermocouples are arranged on a portion above the sacrificial layer in the thin film and on the other side without the sacrificial layer. The cavity 3 surrounded by the insulating film 2 and the nitride film on the silicon substrate 1 is formed by immersing the device in an etchant, penetrating the etchant through a hole 9 formed in the thin film surface, and etching the sacrificial layer 3. . The nitride film 7 serves as a stopper for the etching as described above. In the example of FIG. 2, when infrared light is incident on the thin film serving as an infrared detection unit,
Infrared light transmitted through the film no longer contributes to the temperature rise of the film. Further, since the diaphragm structure has a structure formed by etching a sacrificial layer formed on an insulating film on a silicon substrate, infrared light transmitted through the thin film serves both as a support for the diaphragm and as a heat sink. Therefore, there is a disadvantage that the temperature of the heat sink increases due to the absorption by the silicon substrate and the sensitivity of the infrared sensor deteriorates.
【０００３】一方を前記薄膜中で空洞１２の上部に、も
う一方を空洞１２の無い部分に配置してある。空洞１２
は、デバイスをエッチング液に浸して、薄膜表面に穿け
た孔９からエッチング液を浸透させ、シリコン基板を異
方性エッチングして形成する。窒化膜７は前述のように
前記エッチングに対してストッパーとなる。図３の例で
は図２同様に、赤外線検知部である前記薄膜に、赤外線
が入射した場合、薄膜を透過した赤外線は、もはや薄膜
の温度上昇には関与しない。[0003] One is disposed above the cavity 12 in the thin film, and the other is disposed in a portion without the cavity 12. Cavity 12
Is formed by immersing a device in an etchant, penetrating the etchant through a hole 9 formed in the surface of the thin film, and anisotropically etching the silicon substrate. The nitride film 7 serves as a stopper for the etching as described above. In the example of FIG. 3, similarly to FIG. 2, when infrared light is incident on the thin film serving as the infrared detecting unit, the infrared light transmitted through the thin film no longer contributes to the temperature rise of the thin film.
【０００４】又、前記ダイアフラム構造が、シリコン基
板を、パターンのある側からエッチングしてできた構造
となっているので図２同様薄膜を透過した赤外線は、ダ
イアフラムの支持と、ヒートシングの作用を兼ねている
前記シリコン基板に吸収されているため、ヒートシンク
の温度が上昇し、赤外線のセンサの感度が悪くなるとい
う欠点がある。Further, since the diaphragm structure is a structure formed by etching a silicon substrate from the side having a pattern, the infrared light transmitted through the thin film acts as a support for the diaphragm and a heat-sizing action as in FIG. Since it is absorbed by the silicon substrate that also serves as the above, there is a disadvantage that the temperature of the heat sink rises and the sensitivity of the infrared sensor deteriorates.
【０００５】図４（ａ），（ｂ）も図２と同じ従来のダ
イアグラム構造を有する赤外線センサの上面図と断面図
である。同一部分には同一の符号を付し、詳細な説明は
省略する。図４においては、金属の接合部５によって形
成される熱電対の両端部は、一方を前記薄膜上でシリコ
ン基板の無い部分に、もう一方をシリコン基板のある部
分に配置してある。シリコン基板は裏面から異方性エッ
チングして形成する。窒化膜７は前述のように前記エッ
チングに対してストッパーとなる。FIGS. 4A and 4B are a top view and a sectional view of an infrared sensor having the same conventional diagram structure as FIG. The same portions are denoted by the same reference numerals, and detailed description will be omitted. In FIG. 4, one end of the thermocouple formed by the metal joint 5 is disposed on a portion of the thin film having no silicon substrate, and the other end is disposed on a portion of the silicon substrate. The silicon substrate is formed by anisotropic etching from the back surface. The nitride film 7 serves as a stopper for the etching as described above.
【０００６】図４の例では、図２同様に、赤外線検知部
である前記薄膜に、赤外線が入射した場合、薄膜を透過
した赤外線は、もはや薄膜の温度上昇には関与しない。In the example shown in FIG. 4, similarly to FIG. 2, when infrared light is incident on the thin film, which is an infrared detecting portion, the infrared light transmitted through the thin film no longer contributes to the temperature rise of the thin film.
【０００７】[0007]
【発明が解決しようとする課題】上述した従来の赤外線
センサは、金属又は半導体又は金属と半導体の両方のパ
ターンを支持し、かつエッチング液に対し対腐蝕性を持
ち、エッチングのストッパーとして働く絶縁物の薄膜
と、前記薄膜上にある赤外線吸収率の高い吸収層と、前
記薄膜を支持しているシリコン基板から成るダイアウラ
ム構造を有し、前記薄膜に入射する赤外線の一部を吸収
して電気信号に変換しているが、薄膜を透過した赤外線
は、もはや薄膜の温度上昇には関与しない。又、前記ダ
イアフラム構造が、シリコン基板上の絶縁膜上に形成し
た犠牲層をエッチングしてできた構造となっている場
合、及び、前記ダイアフラム構造が、シリコン基板を、
パターンのある側からエッチングしてできた構造となっ
ている場合薄膜を透過した赤外線は、ダイアフラムの支
持とヒートシンクの作用を兼ねている前記シリコン基板
に吸収されるため、ヒートシンクの温度が上昇し、赤外
線センサの感度が悪くなるという欠点がある。The above-mentioned conventional infrared sensor is an insulator which supports a metal or semiconductor or both metal and semiconductor patterns, has corrosion resistance to an etching solution, and serves as an etching stopper. A thin film, an absorbing layer having a high infrared absorptance on the thin film, and a diaphragm structure comprising a silicon substrate supporting the thin film, and absorbing a part of the infrared light incident on the thin film to generate an electric signal. However, the infrared light transmitted through the thin film no longer contributes to the temperature rise of the thin film. Further, when the diaphragm structure has a structure formed by etching a sacrificial layer formed on an insulating film on a silicon substrate, and the diaphragm structure is a silicon substrate,
In the case where the structure is formed by etching from the side of the pattern, the infrared light transmitted through the thin film is absorbed by the silicon substrate which also serves as a support and a heat sink for the diaphragm, so that the temperature of the heat sink increases, There is a disadvantage that the sensitivity of the infrared sensor deteriorates.
【０００８】[0008]
【課題を解決するための手段】本発明の赤外線センサ
は、金属又は半導体又は金属と半導体のパターンを支持
し、かつ、半導体のエッチング液に対し、対腐蝕性をも
つシリコン窒化膜の薄膜と、前記薄膜上にある赤外線吸
収率の高い吸収層と、前記薄膜を支持している半導体基
板から成るダイアフラム構造を有しており、前記薄膜直
下のシリコン基板には半球状の窪みがあり、シリコン基
板上にはシリコンよりも大きな屈折率を有する薄膜があ
って、窪みを平坦化している。An infrared sensor according to the present invention comprises a thin film of a silicon nitride film which supports a metal or a semiconductor or a pattern of a metal and a semiconductor, and has a corrosion resistance to an etching solution of the semiconductor. It has a diaphragm structure consisting of an infrared-absorbing high absorption layer on the thin film and a semiconductor substrate supporting the thin film, and the silicon substrate immediately below the thin film has a hemispherical recess, On top is a thin film with a higher refractive index than silicon, flattening the pits.
【０００９】[0009]
【実施例】次に本発明の実施例について図面を参照して
説明する。Next, an embodiment of the present invention will be described with reference to the drawings.
【００１０】図１（ａ），（ｂ）は本発明のダイアフラ
ム構造を有する赤外線センサのそれぞれ上面図と断面図
である。半導体と金属のパターン４を支持し、エッチン
グ液に対し耐腐蝕性を持ち、ストッパーとして働くシリ
コン窒化膜の薄膜７と、本デバイス表面にあって、赤外
線吸収率が高い吸収層６と、この吸収層６と前記パター
ン４とを絶縁する絶縁膜８と、以上述べた全４層から成
る薄膜を支持するシリコン基板１と、上記薄膜直下にあ
り、半球状の形状を為している絶縁膜２から成る。吸収
層は、例えば金黒（ゴールドブラック）の膜を用いる。
前記半導体と金属のパターン４は、サーモパイルを為し
ており、熱電能の異なる２種類の熱電材料１０，１１を
金属の接合部５を介し、交互に接続したものである。本
実施例では、２種類の熱電材料１０，１１はそれぞれｐ
型ポリシリコン膜とｎ型ポリシリコン膜であり、各１本
ずつで１対の熱電対を為す合計１２対の熱電対を直列に
接続している。ｐ型ポリシリコン１０とｎ型ポリシリコ
ン１１の間は金属の接合部５で接続されている。又、１
対の熱電対の両端は、一方を前記薄膜中で犠牲層上部に
ある部分に、もう一方を、犠牲層の無い部分に配置して
ある。シリコン基板１の絶縁膜に囲まれた空洞３は、本
デバイスをエッチング液に浸して、薄膜表面に穿けた孔
９からエッチング液を浸透させ、犠牲層３をエッチング
して形成する。窒化膜７は前述のように前記エッチング
に対してストッパーとなる。FIGS. 1A and 1B are a top view and a sectional view, respectively, of an infrared sensor having a diaphragm structure according to the present invention. A thin film 7 of a silicon nitride film which supports a semiconductor and metal pattern 4 and has corrosion resistance to an etching solution and serves as a stopper; an absorption layer 6 on the surface of the device which has a high infrared absorption rate; An insulating film 8 that insulates the layer 6 from the pattern 4; a silicon substrate 1 that supports the above-described thin film composed of all four layers; and an insulating film 2 that is directly under the thin film and has a hemispherical shape. Consists of The absorption layer uses, for example, a gold black film.
The semiconductor and metal pattern 4 is a thermopile, and is formed by alternately connecting two types of thermoelectric materials 10 and 11 having different thermoelectric powers via a metal joint 5. In this embodiment, the two types of thermoelectric materials 10 and 11 are each p
A type polysilicon film and an n-type polysilicon film. A total of 12 pairs of thermocouples, each forming one pair, are connected in series. The p-type polysilicon 10 and the n-type polysilicon 11 are connected by a metal joint 5. Also, 1
Both ends of the pair of thermocouples are arranged in a portion of the thin film above the sacrificial layer and the other is in a portion without the sacrificial layer. The cavity 3 surrounded by the insulating film of the silicon substrate 1 is formed by immersing the device in an etching solution, penetrating the etching solution through holes 9 formed in the thin film surface, and etching the sacrificial layer 3. The nitride film 7 serves as a stopper for the etching as described above.
【００１１】なお実施例ではサーモパイルとしてｐ型，
ｎ型のポリシリコンを接続したものを示したが、これに
限らず、半導体と金属，異なる種類の金属を接続したも
のでもよい。また、実施例ではサーモパイル型の熱型赤
外線センサの場合を示したが、焦電型やボロメータ型で
もよい。焦電型なら、上記サーモパイルパターンの代わ
りに焦電材料を薄膜上に付ければよいし、ボロメータ型
なら、ボロメータ材料を薄膜上にパターニングすればよ
い。これらの場合でも本発明には、赤外線センサとして
の感度が高くなる効果がある。In the embodiment, a p-type thermopile is used.
Although an example in which n-type polysilicon is connected is shown, the present invention is not limited to this, and a semiconductor in which a metal or a different kind of metal is connected may be used. Further, in the embodiment, the case of the thermopile type thermal infrared sensor is shown, but a pyroelectric type or a bolometer type may be used. In the case of the pyroelectric type, a pyroelectric material may be provided on the thin film instead of the thermopile pattern. In the case of the bolometer type, the bolometer material may be patterned on the thin film. Even in these cases, the present invention has the effect of increasing the sensitivity as an infrared sensor.
【００１２】[0012]
【発明の効果】以上説明したように本発明は、金属又は
半導体又は金属と半導体の両方のパターンを支持し、か
つ、エッチング液に対し耐腐蝕性をもつ絶縁物の薄膜の
直下のシリコン基板に半球状の窪みがあり、シリコン基
板上にはシリコンよりも大きな屈折率を有する薄膜があ
って、窪みを平坦化しているので、薄膜を透過した赤外
線は半球状の窪みの界面で反射され、前記薄膜に裏側か
ら入射し、再度吸収される。このため、従来の赤外線セ
ンサよりも効率よく赤外線を吸収することができる。
又、ヒートシンクの温度上昇が少なくなるので、赤外線
センサの感度を良くできる効果がある。As described above, the present invention provides a method for supporting a metal or semiconductor or a pattern of both a metal and a semiconductor on a silicon substrate directly under an insulating thin film having corrosion resistance to an etching solution. There is a hemispherical dent, and there is a thin film having a refractive index larger than that of silicon on the silicon substrate and the dent is flattened, so that infrared light transmitted through the thin film is reflected at the interface of the hemispherical dent, The light enters the thin film from the back side and is absorbed again. For this reason, infrared rays can be absorbed more efficiently than a conventional infrared sensor.
Further, since the temperature rise of the heat sink is reduced, there is an effect that the sensitivity of the infrared sensor can be improved.
【図１】（ａ）は実施例の上面図、（ｂ）はその断面図FIG. 1A is a top view of an embodiment, and FIG. 1B is a cross-sectional view thereof.
【図２】（ａ）は従来例の上面図、（ｂ）はその断面図2A is a top view of a conventional example, and FIG. 2B is a cross-sectional view thereof.
【図３】（ａ）は従来例の上面図、（ｂ）はその断面図3A is a top view of a conventional example, and FIG. 3B is a cross-sectional view thereof.
【図４】（ａ）は従来例の上面図、（ｂ）はその断面図4A is a top view of a conventional example, and FIG. 4B is a cross-sectional view thereof.
１ シリコン基板 ２ 絶縁膜 ３ 犠牲層 ４ 半導体と金属パターン ５ 金属の節点 ６ 吸収層 ７ 窒化膜 ８ 絶縁膜 ９ 孔 １０ ｐ型ポリシリコン １１ ｎ型ポリシリコン １２ 空洞 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Insulating film 3 Sacrificial layer 4 Semiconductor and metal pattern 5 Metal node 6 Absorption layer 7 Nitride film 8 Insulating film 9 Hole 10 P-type polysilicon 11 N-type polysilicon 12 Cavity
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) G01J 1/02 G01J 5/02 H01L 35/32 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) G01J 1/02 G01J 5/02 H01L 35/32
Claims (1)
のパターンを支持し、かつ半導体のエッチング液に対し
耐腐蝕性を持つ絶縁物の薄度と、前記薄膜上にある赤外
線吸収率の高い吸収層と、前記薄膜を支持している半導
体基板から成る、ダイアフラム構造を有する熱型赤外線
センサにおいて、前記薄膜直下のシリコン基板に半球状
の窪みがあり、シリコン基板上には、シリコンよりも大
きな屈折率を有する薄膜があって、窪みを平坦化してい
ることを特徴とする熱型赤外線センサ。An insulator which supports a metal or semiconductor or both metal and semiconductor patterns and has corrosion resistance to a semiconductor etching solution, and a high absorption rate of infrared absorption on the thin film In a thermal infrared sensor having a diaphragm structure, comprising a layer and a semiconductor substrate supporting the thin film, the silicon substrate immediately below the thin film has a hemispherical depression, and the silicon substrate has a larger refractive index than silicon. A thermal infrared sensor comprising a thin film having a refractive index and a flattened depression.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4265688A JP2910448B2 (en) | 1992-10-05 | 1992-10-05 | Infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4265688A JP2910448B2 (en) | 1992-10-05 | 1992-10-05 | Infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06117919A JPH06117919A (en) | 1994-04-28 |
| JP2910448B2 true JP2910448B2 (en) | 1999-06-23 |
Family
ID=17420626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4265688A Expired - Lifetime JP2910448B2 (en) | 1992-10-05 | 1992-10-05 | Infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2910448B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999031471A1 (en) * | 1997-12-18 | 1999-06-24 | Mitsubishi Denki Kabushiki Kaisha | Infrared solid state image sensing device |
| DE19928297A1 (en) * | 1999-06-22 | 2000-12-28 | Bosch Gmbh Robert | Production of a sensor with a membrane comprises depositing a silicon nitride layer by a LPCVD or PECVD process on a surface of a silicon substrate, and etching a recess from the underside of the substrate |
| DE10320357B4 (en) * | 2003-05-07 | 2010-05-12 | Perkinelmer Optoelectronics Gmbh & Co.Kg | Radiation sensor, wafer, sensor array and sensor module |
| JP6197312B2 (en) | 2013-03-12 | 2017-09-20 | 株式会社リコー | Sensor element and method for manufacturing sensor element |
| CN103698020B (en) * | 2013-12-02 | 2018-12-28 | 中北大学 | Thermopile IR gas detector and its processing method of the laminated film as infrared absorption layer |
| CN103698021B (en) * | 2013-12-02 | 2019-01-18 | 中北大学 | Thermopile IR detector based on the reflecting layer TiN |
| CN104501970B (en) * | 2014-12-18 | 2017-05-03 | 上海新微技术研发中心有限公司 | Three-dimensional temperature detector and manufacturing method thereof |
| CN107990989B (en) * | 2017-12-21 | 2024-12-27 | 南京方旭智芯微电子科技有限公司 | Thermopile infrared detector and preparation method thereof |
| CN111504477B (en) * | 2020-05-06 | 2021-03-26 | 珠海格力电器股份有限公司 | Infrared temperature sensor, manufacturing method thereof and temperature detection device |
-
1992
- 1992-10-05 JP JP4265688A patent/JP2910448B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06117919A (en) | 1994-04-28 |
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