JP2911207B2 - Method for producing fine boron carbide powder - Google Patents
Method for producing fine boron carbide powderInfo
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- JP2911207B2 JP2911207B2 JP2284492A JP28449290A JP2911207B2 JP 2911207 B2 JP2911207 B2 JP 2911207B2 JP 2284492 A JP2284492 A JP 2284492A JP 28449290 A JP28449290 A JP 28449290A JP 2911207 B2 JP2911207 B2 JP 2911207B2
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- boron carbide
- powder
- boron
- particle size
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は研磨材、熱中性子吸収材、焼結体を製造する
に好適な原料となる炭化ホウ素微粉末の製造方法に関す
る。Description: TECHNICAL FIELD The present invention relates to a method for producing a fine powder of boron carbide, which is a suitable raw material for producing an abrasive, a thermal neutron absorber, and a sintered body.
炭化ホウ素の従来の製造方法には(イ)ホウ素化合物
を炭素と反応させる方法、(ロ)ホウ素化合物を炭素と
金属Mgとで反応させる方法、(ハ)金属ホウ素と炭素と
の反応による方法、(ニ)BCl4およびCH4等を用いて気
相反応させる方法等が知られている。Conventional methods for producing boron carbide include (a) a method of reacting a boron compound with carbon, (b) a method of reacting a boron compound with carbon and metal Mg, (c) a method of reacting metal boron with carbon, (D) A method of causing a gas phase reaction using BCl 4, CH 4, or the like is known.
(イ)の方法では、酸化ホウ素等のホウ素化合物に炭
素材料を配合し、アーク炉等で2000℃もしくはそれ以上
の高温で還元、炭化させる方法で、最も一般的な製造方
法である(特公昭49−44880、特開昭48−39400)。In the method (a), a carbon material is blended with a boron compound such as boron oxide, and reduced and carbonized at a high temperature of 2000 ° C. or more in an arc furnace or the like. 49-44880, JP-A-48-39400).
ホウ素化合物を炭素とアーク炉を用いて反応させて炭
化ホウ素を造ると、電極下部に溶融、凝固した塊状の炭
化ホウ素が生成する。その粉末を得る場合には、それを
所望の粒度に粉砕するが、炭化ホウ素自体は高硬度のた
め、インゴットを微粉にまで粉砕するのに多大なエネル
ギーを要し、更に、長時間粉砕を要するため純度を低下
させ、不純物除去のため酸洗等の処理が必要であり、高
純度微粉を得るのは極めて収率が悪い。When the boron compound is reacted with carbon using an arc furnace to produce boron carbide, a molten and solidified massive boron carbide is formed below the electrode. When the powder is obtained, it is pulverized to a desired particle size, but since boron carbide itself has high hardness, it takes a lot of energy to pulverize the ingot to fine powder, and furthermore, it takes a long time to pulverize. Therefore, it is necessary to reduce the purity and to perform a treatment such as pickling to remove impurities, and to obtain high-purity fine powder has a very low yield.
前述の特公昭49−44880ではアーク炉の代わりに誘導
炉を用いて、不活性ガス中で1700〜2000℃に加熱し炭化
ホウ素微粉末を得ているが、その粒度は1〜150μmと
粗く、場合により5〜10μmの細粉を得ているが微粉末
とはいい難い。In the above-mentioned JP-B-49-44880, an induction furnace is used in place of an arc furnace, and heated to 1700 to 2000 ° C. in an inert gas to obtain a fine boron carbide powder, whose particle size is as coarse as 1 to 150 μm. In some cases, fine powder of 5 to 10 μm is obtained, but it is difficult to say that it is a fine powder.
また、ホウ素化合物を炭素と金属Mgとで還元、炭化す
る方法(特公昭41−15166、特公昭41−15167、特開昭57
−175717、特開昭60−46909、特開昭60−46910)ではホ
ウ素化合物を単に炭素とで反応させる方法に比べ低温で
炭化ホウ素が合成できるが、その粒度の記載は見られな
い。この方法では、炉内反応帯体積の75〜80vol%を反
応副生成物であるMgOが占め、焼成反応1バッチ当りの
実質的な炭化ホウ素の収量は極めて少なく、また、反応
が暴走したりガスの急膨張が起こり、試料の飛散しやす
い欠点がある。この後者の欠点を解決するために、MgO
等の希釈剤を加えて反応を緩慢に進ませたり、触媒とし
て金属硫酸塩を加えて、より低温で反応させて改良をは
かっているが、それによって更に収量を低下させてい
る。Also, a method of reducing and carbonizing a boron compound with carbon and metal Mg (Japanese Patent Publication Nos. 41-15166, 41-15167, and
-175717, JP-A-60-46909 and JP-A-60-46910), boron carbide can be synthesized at a lower temperature than the method of simply reacting a boron compound with carbon, but the particle size is not described. In this method, 75 to 80 vol% of the reaction zone in the furnace is occupied by MgO as a reaction by-product, the actual yield of boron carbide per one batch of the calcination reaction is extremely small, There is a disadvantage that the sample is easily expanded and the sample is easily scattered. To overcome this latter drawback, MgO
Such a diluent is added to make the reaction proceed slowly, or a metal sulfate is added as a catalyst, and the reaction is carried out at a lower temperature to improve the reaction, thereby further reducing the yield.
本発明の目的は、従来製法の上記の種々の問題を解決
し、安価に炭化ホウ素微粉末を造ることにある。An object of the present invention is to solve the above-mentioned various problems of the conventional production method and to produce boron carbide fine powder at low cost.
本発明者は上記の目的を達成すべくいろいろ検討した
結果、微粒子促進剤として炭化ホウ素粉末を前もって原
料に添加しておく製法、すなわち、ホウ素源と炭素源と
を原料とする炭化ホウ素の製造方法において、反応によ
り新たに生成する炭化ホウ素量100重量部に対し、5〜6
0重量部の炭化ホウ素粉末を前記原料に混合した後、不
活性ガス雰囲気中で1500〜2000℃にて加熱することを特
徴とする炭化ホウ素微粉末の製造方法を見出した。The present inventor has conducted various studies to achieve the above object, and as a result, a production method in which boron carbide powder is previously added to a raw material as a fine particle accelerator, that is, a production method of boron carbide using a boron source and a carbon source as raw materials. In 5 to 6 parts by weight of boron carbide newly generated by the reaction,
The present inventors have found a method for producing fine boron carbide powder, which comprises mixing 0 parts by weight of boron carbide powder with the raw material and heating the mixture at 1500 to 2000 ° C. in an inert gas atmosphere.
原料であるホウ素源としては、金属ホウ素、酸化ホウ
素もしくは熱分解後酸化ホウ素等を生成する化合物を用
いる。As a boron source as a raw material, metal boron, boron oxide, or a compound that generates boron oxide after thermal decomposition is used.
熱分解後酸化ホウ素を生成する化合物とは、ホウ酸や
ホウ酸エステル等をいう。ホウ酸エステルは、一般式B
(OR)n(OH)3-n(nは1〜3の整数、Rはアルキル
基、シクロアルキル基、フェニル基)で表わされるもの
をいう。The compound that generates boron oxide after thermal decomposition refers to boric acid, boric acid esters, and the like. The borate ester has the general formula B
(OR) n (OH) 3-n (n is an integer of 1 to 3, R is an alkyl group, a cycloalkyl group, a phenyl group).
また、炭素源としてはカーボンブラック等の固体炭素
もしくは熱分解後炭素を生成する化合物を用いる。熱分
解後に炭素を生成する化合物とはフェノール樹脂、砂糖
等の不活性ガス中で熱分解させた後、炭素が残るもので
あれば何でもよく、いずれの化合物を用いても同じ効果
を生ずる。As the carbon source, solid carbon such as carbon black or a compound that generates carbon after pyrolysis is used. The compound capable of forming carbon after thermal decomposition may be any compound as long as carbon remains after being thermally decomposed in an inert gas such as phenol resin or sugar.
なお、本発明で使用できるカーボンブラックは、ファ
ーネス法、アセチレン法等によって製造されるもののい
ずれでもよく、特に限定されるものではない。The carbon black that can be used in the present invention may be any of those produced by a furnace method, an acetylene method, or the like, and is not particularly limited.
微粒子化促進剤として加える炭化ホウ素粉末の添加量
は、反応により新たに生成する炭化ホウ素量100重量部
に対して5〜60重量部加えるのが好ましい。5重量部未
満では生成する炭化ホウ素の微粒子化に対して効果がな
く、60重量部を超えても微粒子化の効果はより優れるこ
とはなく、経済性が劣ることになる。より好ましい添加
量は10〜30重量部である。The amount of the boron carbide powder to be added as the micronization accelerator is preferably 5 to 60 parts by weight based on 100 parts by weight of the newly generated boron carbide by the reaction. If the amount is less than 5 parts by weight, there is no effect on the formation of fine particles of boron carbide. If the amount exceeds 60 parts by weight, the effect of the formation of fine particles is not more excellent, and the economic efficiency is inferior. A more preferred addition amount is 10 to 30 parts by weight.
また、添加混合する炭化ホウ素粉末の粒度は、粗くて
も反応により生成する炭化ホウ素の微粒子化の効果はあ
るが、反応生成粉中にそのまま残るため、よりよい炭化
ホウ素微粉末を得るためには微細な炭化ホウ素粉末がよ
く、10μm以下の中心径のものが望ましく、粒径が小さ
い程望ましいことはいうまでもない。In addition, the particle size of the boron carbide powder to be added and mixed is effective even if it is coarse, because the boron carbide generated by the reaction is finely divided, but remains as it is in the reaction product powder. A fine boron carbide powder is preferable, and a powder having a center diameter of 10 μm or less is desirable. Needless to say, a smaller particle diameter is more desirable.
本発明のポイントである炭化ホウ素を前もって添加し
ておくことにより生成される炭化ホウ素が微粒子化する
のは、添加した炭化ホウ素が核として作用して、炭化ホ
ウ素粉末無添加の場合に比べて、核の総数が増加したこ
とになり、その結果、核の成長が抑制され微粒子化が進
行すると考えられる。また、酸化ホウ素と炭素とで炭化
ホウ素が生成される反応は発熱反応で、原料中に炭化ホ
ウ素粉末を前もって添加しておくことにより、反応系の
実質の原料が希釈されたことになり、発熱反応による熱
が分散されるとともに、反応が緩慢に進行する結果、生
成される炭化ホウ素が微粒子化されると考えられる。The boron carbide produced by adding boron carbide in advance, which is the point of the present invention, is finely divided, because the added boron carbide acts as a nucleus, compared with the case without boron carbide powder addition. It is considered that the total number of nuclei increased, and as a result, the growth of the nuclei was suppressed and the atomization proceeded. In addition, the reaction in which boron carbide is generated between boron oxide and carbon is an exothermic reaction, and by adding boron carbide powder in advance in the raw material, the actual raw material of the reaction system is diluted, and the heat is generated. It is considered that the heat generated by the reaction is dispersed and the reaction proceeds slowly, so that the produced boron carbide is finely divided.
このことは原料中に添加する炭化ホウ素の粒径を小さ
くする程、生成される炭化ホウ素の粒径が小さくなる傾
向が見られるが、これは、原料中に同一重量部の炭化ホ
ウ素を加えた場合、炭化ホウ素の粒径が小さい程粒子数
が多くなり、核総数を増していることからもうなずけ
る。This suggests that the smaller the particle size of boron carbide added to the raw material, the smaller the particle size of boron carbide produced, but this is due to the fact that the same weight parts of boron carbide were added to the raw material. In this case, the smaller the particle size of boron carbide, the larger the number of particles and the larger the total number of nuclei.
本発明では、ホウ素源と炭素源の原料と添加炭化ホウ
素を充分に混合した後、ハンドリングの問題等からして
ペレット化することが望ましい。それをAr、N2等の不活
性ガス雰囲気中で焼成する。In the present invention, it is preferable that the raw materials of the boron source and the carbon source and the added boron carbide are sufficiently mixed and then pelletized in view of handling problems and the like. It Ar, it is fired in an inert gas atmosphere such as N 2.
炭化ホウ素を生成させる焼成温度は1500〜2000℃が好
ましく、1500℃未満では未反応の酸化ホウ素や炭素が多
量に残り、また、2000℃を超えると生成した炭化ホウ素
の粒成長を起こし好ましくない。The firing temperature for forming boron carbide is preferably from 1500 to 2000 ° C. If the temperature is lower than 1500 ° C, a large amount of unreacted boron oxide or carbon remains, and if it exceeds 2000 ° C, the generated boron carbide is unfavorably grown.
本発明により生成される炭化ホウ素はX線回折的に
は、B4CまたはB13C2、またはそれらの混合物である。Boron carbide produced by the present invention is the X-ray diffractive, B 4 C or B 13 C 2, or mixtures thereof.
本発明を実施例にて詳細に説明する。 The present invention will be described in detail with reference to examples.
実施例1〜9 ホウ素源として金属ホウ素(Stark社製アモルファス
B、粒度5μm、純度95〜97%)を7.2g、炭素源とし
てカーボンブラック(昭和キャボット(株)製ショウブ
ラックN220)を2.0gに対し、表・1のごとく炭化ホウ素
B4C粉末(Stark社製F−1500、粒度1〜2μm、純度95
〜97%)を0.46〜5.52gの範囲の9種類の添加量(炭化
ホウ素生成量100重量部に対して5〜60重量部に相当)
で加え、アセトン40mlを分散媒として5時間湿式ボール
ミル混合した。得られたスラリーを乾燥、解砕した後、
ペレット状に成形し、Ar気流中において、1700℃、1時
間の条件で焼成した。Examples 1 to 9 7.2 g of metallic boron (Amorphous B manufactured by Stark, particle size 5 μm, purity 95 to 97%) as a boron source, and 2.0 g of carbon black (Showa Cabot Co., Ltd., Show Black N220) as a carbon source. On the other hand, as shown in Table 1, boron carbide
B 4 C powder (Stark F-1500, particle size 1-2 μm, purity 95
9%) in the range of 0.46 to 5.52 g (equivalent to 5 to 60 parts by weight per 100 parts by weight of boron carbide produced)
And wet ball mill mixing for 5 hours using 40 ml of acetone as a dispersion medium. After drying and crushing the obtained slurry,
It was formed into pellets and fired in an Ar gas flow at 1700 ° C. for 1 hour.
X線回折により、生成物の同定を行なったところ、い
ずれもB4C(又はB13C2)の回折ピークのみが認められ
た。When the product was identified by X-ray diffraction, only a B 4 C (or B 13 C 2 ) diffraction peak was observed in each case.
また、合成された粉末の一次粒子径をSEMにより観察
したところ、1.5〜2.5μm程度であり、B4C添加量が多
い程、一次粒子径が小さくなる傾向があることがわか
る。Further, when the primary particle diameter of the synthesized powder was observed by SEM, it was found to be about 1.5 to 2.5 μm, and it was found that the larger the amount of B 4 C added, the smaller the primary particle diameter.
比較例1〜5 B4C粉末を原料混合段階で0〜0.37g(炭化ホウ素生成
量に対して1〜4重量部相当)の範囲の5種類の添加量
で加えること以外は、実施例1〜9と同様の手順、条件
でB4C(又はB13C2)を合成した。表・1に原料配合およ
び生成粉特性等を示す。原料としてB4C無添加の場合、
生成したB4C(又はB13C2)の粒径は50μmに達した。ま
た、4重量部添加の場合でも、生成したものの一次粒子
の平均粒径は10μmを超てていた。Except that added in five amount ranging from Comparative Example 1 to 5 B 4 C powder in a raw material mixing step 0~0.37g (1~4 parts corresponding relative boron carbide production amount), Example 1 to 9 and the same procedure was synthesized B 4 C (or B 13 C 2) in the condition. Table 1 shows the raw material composition and the characteristics of the formed powder. When B 4 C is not added as a raw material,
The particle size of the generated B 4 C (or B 13 C 2 ) reached 50 μm. Even in the case of adding 4 parts by weight, the average particle size of the primary particles produced exceeded 10 μm.
実施例10〜17 ホウ素源として市販品H3BO3(関東化学(株)製、特
級品)を20g、炭素源として砂糖(三井精糖(株)製グ
ラニュー糖、市販品、残炭率20%)を12g用い、更に、
表・2に示す様に粒度の異なる8種類のB4Cを0.32g(炭
化ホウ素生成量に対し20重量部相当)加え、純水120ml
を分散媒として、5時間湿式ボールミル混合した。 Examples 10 to 17 20 g of a commercially available product H 3 BO 3 (manufactured by Kanto Kagaku Co., Ltd., special grade product) as a boron source and sugar (granulated sugar manufactured by Mitsui Seika Co., Ltd., a commercial product, residual carbon ratio 20%) as a carbon source ) Using 12g, and
As shown in Table 2, 0.32 g (equivalent to 20 parts by weight based on the amount of boron carbide produced) of eight kinds of B 4 C having different particle sizes was added, and 120 ml of pure water was added.
Was used as a dispersion medium and mixed in a wet ball mill for 5 hours.
この場合、原料として配合する平均粒径2μm以上の
粗い粒度のB4C粉末は、Stark社製の銘柄F−1500(粒度
1〜3μm)からF−400(粒度8〜32μm)の各種の
粒度の市販品をそのまま用いたが、2μm未満の粒度の
ものについては、市販品B4C粉末を水中分散させ、沈降
法により分級し微粉末B4Cを採取した。In this case, the average particle B 4 C powder of diameter 2μm or more coarse granularity, various granularity Stark Co. brand F-1500 F-400 from (particle size 1 to 3 [mu] m) (particle size 8~32Myuemu) formulated as a raw material of it was used as a commercial product, for those particle size of less than 2 [mu] m, the commercially available products B 4 C powder was dispersed in water, it was classified to collect fine powders B 4 C by sedimentation.
原料配合して得られた混合スラリーを乾燥、解砕した
後、ペレット状に成形し、Ar気流中において1700℃、1
時間で焼成した。The mixed slurry obtained by blending the raw materials is dried and crushed, then formed into pellets, and heated at 1700 ° C., 1 ° C. in an Ar gas flow.
Fired in time.
得られた生成B4C(又はB13C2)の特性を表・2に示
す。The properties of the resulting B 4 C (or B 13 C 2 ) are shown in Table 2.
粒度の粗いB4Cを用いても、比較的細かいB4C(又はB
13C2)が生成するが、原料中に加えたB4Cはそのまま残
るため、平均粒径は若干粗くなる。原料中に加えるB4C
粒度が細かい程、生成したB4C(又はB13C2)は細かくな
り、原料添加のB4Cがサブミクロンであると、生成したB
4C(又はB13C2)の平均粒径もサブミクロンとなった。Even when coarse B 4 C is used, relatively fine B 4 C (or B 4 C
Although 13 C 2 ) is produced, B 4 C added to the raw material remains as it is, so that the average particle size becomes slightly coarse. B 4 C added to raw material
More fine-grained, resulting B 4 C (or B 13 C 2) is finer, the B 4 C in the raw kaolin is submicron, generated B
The average particle size of 4 C (or B 13 C 2 ) also became submicron.
比較例6〜13 原料に対し、平均粒径0.2μmおよび2.0μmのB4C粉
末を0〜0.06g(炭化ホウ素生成量に対し0〜3.75重量
部相当)を表・2のごとく添加する以外は、実施例10〜
17と同様にB4C(又はB13C2)を合成した。Comparative Example 6-13 raw material to, 0~0.06G an average particle diameter 0.2μm and 2.0 .mu.m B 4 C powder of (0 to 3.75 parts by weight corresponding to a boron carbide production amount) but with addition as shown in Table-2 Are from Examples 10 to
B 4 C (or B 13 C 2 ) was synthesized in the same manner as 17.
得られた合成粉末の特性を表・2に示す。 Table 2 shows the properties of the obtained synthetic powder.
B4C添加量を同じとした場合、平均粒径の小さいB4Cを
用いた方が、合成されたB4C(又はB13C2)の粒径は小さ
くなったが、いずれも平均粒径は、10μmを超えてい
た。When the amount of B 4 C added was the same, the particle size of the synthesized B 4 C (or B 13 C 2 ) was smaller when B 4 C with a smaller average particle size was used, The particle size was above 10 μm.
実施例18〜25、比較例14〜19 ホウ素源としてB2O3(関東化学(株)製、市販特級
品)を10g、炭素源としてカーボンブラック(実施例1
〜9と同一物)を5.0gに対し、表・3のごとく平均粒度
0.5および1.0μmのB4C分級粉末を0.49g(生成炭化ホウ
素量に対し15重量部相当)加え、純水57mlを分散媒とし
て5時間湿式ボールミル混合した。得られたスラリーを
乾燥、解砕した後、ペレット状に成形し、Ar気流中にお
いて、表・3のごとく1300〜2200℃の温度範囲で2時間
保持して焼成した。 Examples 18 to 25, Comparative Examples 14 to 19 10 g of B 2 O 3 (manufactured by Kanto Chemical Co., Ltd., special grade product) as a boron source and carbon black (Example 1) as a carbon source
Average particle size as shown in Table 3 for 5.0 g of
0.49 g (equivalent to 15 parts by weight with respect to the amount of boron carbide formed) of B 4 C classified powder of 0.5 and 1.0 μm was added, and mixed with a wet ball mill for 5 hours using 57 ml of pure water as a dispersion medium. The obtained slurry was dried and crushed, formed into pellets, and calcined in an Ar gas stream while maintaining the temperature range of 1300 to 2200 ° C. for 2 hours as shown in Table 3.
焼成温度を1500℃以下では生成物の酸素含有量が高く
なり、1500℃未満では急激に酸素含有量を増し、未反応
B2O3が残っていることを表わしている。このことは、炭
素含有量からもわかり、B4Cの理論炭素量で21.74%を15
00℃以下の焼成温度では超えていて、1500℃未満の焼成
温度では極端に未反応炭素が含まれている。If the firing temperature is below 1500 ° C, the oxygen content of the product will be high, and if it is below 1500 ° C, the oxygen content will increase sharply,
This indicates that B 2 O 3 remains. This is evident from the carbon content, which translates from a theoretical carbon content of B 4 C of 21.74% to 15
At a firing temperature of 00 ° C. or less, the temperature exceeds the limit, and at a firing temperature of less than 1500 ° C., extremely unreacted carbon is contained.
焼成温度が1600℃以上では酸素、遊離炭素濃度の低い
炭素ホウ素粉末が得られるが、2000℃を超えると炭化ホ
ウ素の粒成長が進行していることがわかる。When the firing temperature is 1600 ° C. or higher, a carbon-boron powder having a low concentration of oxygen and free carbon is obtained. However, when the firing temperature is higher than 2000 ° C., it can be seen that the boron carbide grains are growing.
比較例20〜27 平均粒径0.5および1.0μmのB4Cの原料中への添加量
を0〜0.13g(生成炭化ホウ素に対して0〜4.0重量部相
当)にしたこと以外は実施例20、21と同様の手順、条件
で炭化ホウ素を合成した。よって、焼成条件は1700℃で
2時間である。 Comparative Examples 20 to 27 Example 20 except that the amount of B 4 C having an average particle size of 0.5 and 1.0 μm added to the raw material was 0 to 0.13 g (corresponding to 0 to 4.0 parts by weight with respect to the generated boron carbide). And boron carbide were synthesized in the same procedure and under the same conditions as in Example 21. Therefore, the firing condition is 1700 ° C. for 2 hours.
B4C添加量が同一の場合、その平均粒径が小さい程、
合成される炭化ホウ素粉末の粒径は小さくなるが、合成
された炭化ホウ素の平均粒径は、いずれも10μmを超え
ていた。When the amount of B 4 C added is the same, the smaller the average particle size,
Although the particle size of the synthesized boron carbide powder was small, the average particle size of the synthesized boron carbide was all over 10 μm.
実施例26〜28 炭素源としてフェノール樹脂(固形フェノール樹脂、
昭和高分子(株)製BRM−595、残炭率40%)を使用し、
表・5に示すごとく種々のホウ素源ならびに炭化ホウ素
生成量に対し10重量部相当のB4C粉末を混合する以外
は、実施例1〜9と同一条件、手順にて炭化ホウ素を合
成した。 Examples 26 to 28 A phenol resin (solid phenol resin,
Using Showa High Polymer Co., Ltd. BRM-595, residual carbon ratio 40%)
Except for mixing the various boron source and B 4 C powder in 10 parts by weight corresponding to a boron carbide production amount as shown in Table-5, the same conditions as in Example 1-9 was synthesized boron carbide in the procedure.
その結果、合成された炭化ホウ素の粉末粒度も表・5
に示す。As a result, the powder particle size of the synthesized boron carbide is also shown in Table 5.
Shown in
実施例29 実施例10の合成炭化ホウ素粉末を、SiCボールをメデ
ィアとして振動ミルで1時間粉砕した。 Example 29 The synthetic boron carbide powder of Example 10 was ground with a vibration mill for 1 hour using SiC balls as media.
得られた粉末の粒度を粒度分布測定機で測定した二次
粒子に相当する平均粒径は0.4μmであった。また、粉
砕後の不純物分析をしたところSiCボールによると思わ
れるSi不純物が最も多く350ppm含有されていることがわ
かった。The average particle size corresponding to the secondary particles obtained by measuring the particle size of the obtained powder with a particle size distribution analyzer was 0.4 μm. In addition, analysis of the impurities after the pulverization revealed that the largest amount of Si impurities probably due to the SiC balls was 350 ppm.
実施例30 実施例14の合成粉末につき実施例29と同様に振動ミル
粉砕した。ただ、粉砕時間は5時間とした。Example 30 The synthetic powder of Example 14 was subjected to vibration mill pulverization in the same manner as in Example 29. However, the grinding time was 5 hours.
得られた粉末の平均粒径を実施例29と同様に測定した
ところ0.7μmであり、Si不純物含量は700ppmであっ
た。When the average particle size of the obtained powder was measured in the same manner as in Example 29, it was 0.7 μm, and the Si impurity content was 700 ppm.
比較例28 比較例1の合成炭化ホウ素粉末につき実施例29と同様
に振動ミル粉砕した。ただ、粉砕時間は10倍の10時間で
粉砕した。しかし、得られた粉砕粉の平均粒径を実施例
29と同様に測定したところ、8.0μmであり、Si不純物
含量は5.2wt%であった。Comparative Example 28 The synthetic boron carbide powder of Comparative Example 1 was subjected to vibration mill grinding in the same manner as in Example 29. However, the crushing time was 10 times, that is, 10 hours. However, the average particle size of the obtained pulverized powder
It was 8.0 μm when measured in the same manner as in Example 29, and the Si impurity content was 5.2 wt%.
本発明により、一次粒子径が2μm以下の炭化ホウ素
粉末を容易に合成することができ、また、粉砕により簡
単に二次粒子径としてサブミクロンの微粉末が得られ
る。According to the present invention, a boron carbide powder having a primary particle diameter of 2 μm or less can be easily synthesized, and a submicron fine powder having a secondary particle diameter can be easily obtained by pulverization.
Claims (1)
素の製造方法において、反応により新たに生成する炭化
ホウ素量100重量部に対し、5〜60重量部の炭化ホウ素
粉末を前記原料に混合した後、不活性ガス雰囲気中で15
00〜2000℃にて加熱することを特徴とする炭化ホウ素微
粉末の製造方法。In a method for producing boron carbide using a boron source and a carbon source as raw materials, 5 to 60 parts by weight of boron carbide powder is used as the raw material for 100 parts by weight of newly generated boron carbide by the reaction. After mixing, 15 minutes in an inert gas atmosphere
A method for producing fine boron carbide powder, characterized by heating at 00 to 2000 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2284492A JP2911207B2 (en) | 1990-10-24 | 1990-10-24 | Method for producing fine boron carbide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2284492A JP2911207B2 (en) | 1990-10-24 | 1990-10-24 | Method for producing fine boron carbide powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04160012A JPH04160012A (en) | 1992-06-03 |
| JP2911207B2 true JP2911207B2 (en) | 1999-06-23 |
Family
ID=17679220
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2284492A Expired - Lifetime JP2911207B2 (en) | 1990-10-24 | 1990-10-24 | Method for producing fine boron carbide powder |
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| Country | Link |
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|---|---|---|---|---|
| JP2010535693A (en) * | 2007-08-08 | 2010-11-25 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | Method for producing pressureless sintered high density boron carbide material |
| JP5057327B2 (en) * | 2007-09-14 | 2012-10-24 | 学校法人同志社 | Boron carbide ceramics and method for producing the same |
| JP6993897B2 (en) * | 2018-02-23 | 2022-02-03 | 太平洋セメント株式会社 | Boron Carbide Manufacturing Method |
| US11912578B2 (en) * | 2018-06-13 | 2024-02-27 | Sabanci Universitesi | Low-temperature method for boron carbide production |
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|---|---|
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